Abstract: A piezoelectric element comprises a piezoelectric layer and an electrode provided with the piezoelectric layer. The piezoelectric layer is made of a composite oxide containing bismuth ferrite, barium titanate, and bismuth zinc titanate.

Abstract: Provided is a lead-free piezoelectric material having satisfactory and stable piezoelectric constant and mechanical quality factor in a wide practical use temperature range. The piezoelectric material includes a perovskite-type metal oxide represented by Formula (1): (Ba1-xCax)a(Ti1-yZry)O3 (wherein, 1.00?a?1.01, 0.125?x?0.300, and 0.041?y?0.074), Mn, and Mg. The content of Mn is 0.12 parts by weight or more and 0.40 parts by weight or less based on 100 parts by weight of the perovskite-type metal oxide on a metal basis. The content of Mg is 0.10 parts by weight or less (excluding 0 part by weight) based on 100 parts by weight of the perovskite-type metal oxide on a metal basis.

Abstract: An alkali niobate-based piezoelectric material having the general formula {(K1-aNaa)1-bLib}(Nb1-c-dTacSbd)O3+x mol % BanTiO3+y mol % CuO, where 0?a?0.9, 0?b?0.3, 0<c?0.5, 0?d?0.1, 0.5?x?10.0, 0.1?y?8.0, and 0.9?n?1.2.

Abstract: A PZT-type piezoelectric ceramic material having a perovskite structure of the ABO3 type. The stoichiometric ratio of AB is 1:1, with the “A” component being Pb1-zSrz and the “B” component being (Mn1/3Sb2/3)x(ZryTi1-y)1-x. Z is between 0.02 and 0.03, x is between 0.03 and 0.07, and y is between 0.40 and 0.60. The material further comprises dopants, with the dopants comprising Ce, Cu, and Nb dopants, with each of the Ce, Cu, and Nb dopants being provided in an amount of up to 2 wt. %, with the combined amount of the Ce, Cu, and Nb2 dopants being between 1 wt. % and 4 wt. %. Methods for preparing the PZT ceramic materials by combining oxides of Pb, Sr, Mn, Sb, Zr, Ti, Nb, Cu, and Ce and calcining the combined oxides so as to produce a PZT composition of the stated formula are also disclosed.

Abstract: A barium titanate piezoelectric ceramic having good piezoelectric properties and mechanical strength and a piezoelectric element that includes the ceramic are provided. A method for making a piezoelectric ceramic includes forming a compact composed of an oxide powder containing barium titanate particles, sintering the compact, and decreasing the temperature of the compact after the sintering. The sintering includes (A) increasing the temperature of the compact to a first temperature within a temperature range of a shrinking process of the compact; (B) increasing the temperature of the compact to a second temperature within a temperature range of a liquid phase sintering process of the compact after (A); (C) decreasing the temperature of the compact to a third temperature within the temperature range of the shrinking process of the compact after (B); and (D) retaining the third temperature after (C).

Abstract: An additive that contains an emulsion binder resin substantially free of non-emulsion binder resin, such as an emulsion acrylic resin, is mixed into a ceramic raw material powder containing, as its main constituent, a perovskite-type compound to form a ceramic slurry. Then, an orientational ceramic is prepared by subjecting the slurry to a forming process while simultaneously or sequentially applying a magnetic field and drying the slurry. An orientational ceramic, even formed from a substance which has small magnetic anisotropy, such as PZT, is obtained.

Abstract: Provided is a piezoelectric material which has satisfactory insulation property and piezoelectric property and which does not contain lead and potassium. The piezoelectric material includes a perovskite-type metal oxide that is represented by the following general formula (1): (NaxBa1-y)(NbyTi1-y)O3??General formula (1) where relationships of 0.80?x?0.95 and 0.85?y?0.95 are satisfied, and y×0.05 mol % or more to y×2 mol % or less of copper with respect to 1 mol of the perovskite-type metal oxide.

Abstract: Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). A(ZnxTi(1-x))yM(1-y)O3??(1) wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4?x?0.6; and y represents a numerical value satisfying 0.1?y?0.9.

Abstract: A ternary single crystal relaxor piezoelectric of PMN-PZ-PT grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.

Abstract: According to a preferred embodiment, the piezoelectric ceramic includes a complex oxide having the composition represented by formula (1) or (2), and Mn at 0.2-1.2 mass % or 0.2-3 mass %, respectively, in terms of MnCO3. (Pb1-aA1a)TixZr1-x-y-z-b(Zn1/3A22/3)y(Yb1/2A21/2)zSnbO3??(1) (Pb1-aA1a)TixZr1-x-y-b(Zn1/3A22/3)ySnbO3??(2) [In formula (1), A1 represents at least one element selected from the group consisting of Ca, Sr and Ba, and A2 is at least one element selected from the group consisting of Nb, Ta and Sb, and includes at least Nb. In formula (2), A1 represents at least one element selected from among Ca, Sr and Ba, A2 represents at least one element selected from among Nb and W, and A2 includes at least Nb.

Abstract: Provided is a piezoelectric material that achieves both high piezoelectric performance and high Curie temperature. In addition, provided are a piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust removing device, which use the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide that is expressed by the following general formula (1): xBaTiO3-yBiFeO3-zBi(M0.5Ti0.5)O3 (1), where M represents at least one type of element selected from the group consisting of Mg and Ni, x satisfies 0.25?x?0.75, y satisfies 0.15?y?0.70, z satisfies 0.05?z?0.60, and x+y+z=1 is satisfied.

Abstract: A polymer composite piezoelectric body is obtained by conducting polarization treatment on a composite having piezoelectric particles uniformly mixed by dispersion in a polymer matrix containing cyanoethylated polyvinyl alcohol.

Abstract: When a ferroelectric thin film-forming sol-gel solution contains a PZT-based compound, a viscosity-adjusting macromolecular compound including polyvinylpyrrolidone, and an organic dopant including a formamide-based solvent, the PZT-based compound is included at 17 mass % or more in terms of an oxide, the molar ratio of the polyvinylpyrrolidone to the PZT-based compound is PZT-based compound:polyvinylpyrrolidone=1:0.1 to 0.5 in terms of a monomer, and the formamide-based solvent is included at 3 mass % to 13 mass % of the sol-gel solution, it is possible to form a thick layer by coating the sol-gel solution once, the production efficiency improves, and crack-free and dense film formation even after calcination and firing becomes possible.

Abstract: Provided are a barium titanate-based piezoelectric ceramics having satisfactory piezoelectric performance and a satisfactory mechanical quality factor (Qm), and a piezoelectric element using the same. Specifically provided are a piezoelectric ceramics, including: crystal particles; and a grain boundary between the crystal particles, in which the crystal particles each include barium titanate having a perovskite-type structure and manganese at 0.04% by mass or more and 0.20% by mass or less in terms of a metal with respect to the barium titanate, and the grain boundary includes at least one compound selected from the group consisting of Ba4Ti12O27 and Ba6Ti17O40, and a piezoelectric element using the same.

Abstract: Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). A(ZnxTi(1-x))yM(1-y)O3??(1) wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4?x?0.6; and y represents a numerical value satisfying 0.1?y?0.9.

Abstract: A ceramic material having the general formula (BiXNayM<1>zLuM<2>V<V>w) (Ti1-sZs)03, where: M<1> comprises at least one element of main group 1, M<2> comprises at least one element of main group 2, L comprises at least one element of the lanthanides, V is a vacancy and Z is selected from among Zr, Hf and combinations thereof, is provided. Furthermore, a piezoelectric actuator comprising the ceramic material and a process for producing the ceramic material are provided.

Abstract: A preferred piezoelectric ceramic material is a BiFeO3—PbZrO3—PbTiO3 ternary solid solution wherein proportions of the constituent perovskite metal oxides are selected so that the material exhibits relatively high Curie temperatures above 380° C. and useful piezoelectric properties.

Abstract: Provided is a piezoelectric material having good piezoelectric properties and a Curie temperature (Tc) of 150° C. or higher, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a sintered body made of a perovskite-type metal oxide represented by the following general formula (1): xBi(Mg1/2Ti1/2)O3-(1-x)BaTiO3 (1), where x satisfies 0.17?x?0.8, in which an average grain size of grains contained in the sintered body is 0.5 ?m or larger to 10 ?m or smaller, and the sintered body is polycrystalline. In addition, the piezoelectric device includes a piezoelectric material and a pair of electrodes disposed in contact with the piezoelectric material, in which the piezoelectric material is the above-mentioned piezoelectric material.

Abstract: Piezoelectric ceramics that can be used in high temperature actuators. The piezoelectric ceramics have various desirable properties, for example the materials do not depole up to about 400° C. and have large piezoelectric coefficients >400 pm/V. In addition the thickness mode electromechanical coupling coefficient is large, increasing from 0.5 to 0.65 with temperature. The planar electromechanical coefficient is around 0.40 and does not show a significant dependence on temperature. These materials are highly polarizable with remnant polarization around 50 ?C/cm2 and are electrically hard with coercive field above 20 kV/cm. They exhibit single crystal like ferroelectric behavior with square hysteresis loops. Such properties make these materials a piezoelectric ceramic that can be used in stack actuators at high temperatures. Methods for preparing the piezoelectric ceramics are also disclosed.

Abstract: The present invention relates to a ceramic comprising (or consisting essentially of) a solid solution containing Bi, K, Ti and Fe (and optionally Pb) which exhibits piezoelectric behaviour.

Abstract: The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

Abstract: Provided is a manufacturing method for preferentially-oriented oxide ceramics having a high degree of crystal orientation. The manufacturing method includes: obtaining slurry containing an oxide crystal B having magnetic anisotropy; applying a magnetic field to the oxide crystal B, and obtaining a compact of the oxide crystal B; and subjecting the compact to oxidation treatment to obtain preferentially-oriented oxide ceramics including a compact of an oxide crystal C having a crystal system that is different from a crystal system of one of a part and a whole of the oxide crystal B. By (1) reacting raw materials, (2) reducing the oxide crystal A, or (3) keeping the oxide crystal A at high temperature and quenching the oxide crystal A, the oxide crystal B is obtained to be used in the slurry.

Abstract: A method for manufacturing a ferroelectric film including the steps of forming a burnable material film containing hydrogen of not less than 1% by weight on a substrate; forming an amorphous thin film including a ferroelectric material on the burnable material film; and oxidizing and crystallizing the amorphous thin film while supplying hydrogen to the amorphous thin film by burning the burnable material film through heating of the burnable material film and the amorphous thin film in an oxygen atmosphere, to thereby form a first ferroelectric film on the substrate.

Abstract: A piezoelectric compound having no occurrence of segregation or uneven structures as well as a piezoelectric element having excellent piezoelectric properties. The piezoelectric composition includes a main component that is a perovskite-typed oxide represented by formula of ABO3, wherein, one site includes Bi, Na, and another site includes Ti, and part of the Ti is substituted by transition metal element Me (Me is at least one element selected from the group consisting of Mn, Cr, Fe and Co), according to the conversion of BiMeO3, the content ratio of Bi and the transition metal element Me accounts for 6˜43 mol % relative to the whole perovskite-typed oxides as the main component.

Abstract: A ternary polycrystalline material based on lead hafnate (PbHfO3) and having improved dielectric, piezoelectric, and/or thermal stability properties. The Pb(Hf,Ti)O3 based material can exhibit enhanced electromechanical coupling factors when compared to PZT based ceramics and can be used as high performance actuators, piezoelectric sensors and/or ultrasonic transducers. The ternary polycrystalline material can have a perovskite crystal structure with an ABO3 formula and can be characterized by a substitution of heterovalent acceptor and donor ions at A or B (Zr/Hf) sites.

Abstract: The invention relates to a process for producing a structured shaped body or a layer of this type from a precursor of a metal oxide or mixed oxide selected from among magnesium, strontium, barium, aluminum, gallium, indium, silicon, tin, lead and the transition metals.

Abstract: A piezoelectric ceramic comprising as a main component an alkali-containing niobate-based perovskite structure expressed by a compositional formula (LixNayK1-x-y)a(Nb1-zTaz)O3 (provided: 0.04<x?0.1, 0?y?1, 0?z?0.4, and 0.95?a?1.005); wherein a crystal phase or an amorphous phase containing Si and K is made present at a grain boundary or a grain boundary triple point of a plurality of crystal grains constituting the piezoelectric ceramic.

Abstract: A lead-free piezoelectric ceramic material has the general chemical formula xBi(Zn0.5Ti0.5)O3-y(Bi0.5K0.5)TiO3-z(Bi0.5Na0.5)TiO3, wherein x+y+z=1 and x, y, z?0.

Abstract: A piezoelectric ceramic with environmental friendliness including a composition as the main component composed of a composite oxide free from lead (Pb) as a constituent element, and with excellent piezoelectric characteristics such as the relative dielectric constant, the electromechanical coupling factor, and the piezoelectric constant, and a piezoelectric device using the piezoelectric ceramic, are provided. A piezoelectric ceramic including a composition represented by the following general formula as the main component: (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTaz-Zru)O3 (wherein, x, y, z, w, v, u and m in the formula satisfy the following conditions respectively: 0.4<x?0.7; 0.02?y?0.1; 0<z?0.3; 0<w?0.01; 0.04?v?0.07; 0.04?u?0.07; and 0.95?m<1).

Abstract: A lead-free piezoelectric ceramic material has the general chemical formula xBi(A0.5Ti0.5)O3-y(Bi0.5K0.5)TiO3-z(Bi0.5Na0.5)TiO3, wherein x+y+z=1, x?0, and A=Ni or Mg.

Abstract: A piezoelectric material contains a perovskite oxynitride expressed by the General Formula: In the formula, x, y, z and w are numerical values satisfying the relationships: 0?x?1, 0?y?1, 0<z<?, and 0<w?z. Also, z can be 0.1?z?0.2. The piezoelectric material may be in the form of a film having a thickness in the range of 200 nm to 10 ?m that is disposed on a substrate. The perovskite oxynitride may have a tetragonal crystal structure.

Abstract: Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Ax(ZnjTi(1-j))l(MgkTi(1-k))mMnO3??General formula (1) where: A represents a Bi element, or one or more kinds of elements selected from the group consisting of trivalent metal elements and containing at least a Bi element; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9?x?1.25, 0.4?j?0.6, 0.4?k?0.6, 0.09?l?0.49, 0.19?m?0.64, 0.13?n?0.48, and l+m+n=1 are satisfied.

Abstract: Some kinds of carboxylic acids have a stabilizing effect on metal alkoxides and, in a precursor solution, are unlikely to cause a reduced storage stability and an increased viscosity of the precursor solution even when their content is increased; they can be used in the solvent component of the precursor solution. The carboxylic acid content is preferably in a range of 20% by mass to 60% by mass, both inclusive, of the total amount of the raw materials used to prepare the precursor solution. The carboxylic acid component prevents the hydrolysis due to the moisture in the air when the carboxylic acid content is equal to or more than 20% by mass. When the carboxylic acid content is equal to or less than 60% by mass, furthermore, the resulting precursor film will have a sufficiently large thickness.

Abstract: An embodiment relates to a liquid composite dielectric material (LCDM) comprising a metal-containing dispersed phase material in an organic liquid phase material, wherein the liquid composite dielectric material has a dielectric permittivity (?r) of 10000 or more at 40 Hz and a dielectric loss (tan ?) of 1 or less at 40 Hz.

Abstract: Provided is a piezoelectric ceramics that can achieve both high piezoelectric performance and a high Curie temperature. Also provided are a piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust removing device, which use the piezoelectric ceramics. The piezoelectric ceramics include a perovskite-type metal oxide expressed by a general formula (1): xBaTiO3-yBiFeO3-zBi(M0.5Ti0.5)O3, where M represents at least one type of element selected from the group consisting of Mg and Ni, x satisfies 0.40?x?0.80, y satisfies O?y?0.30, z satisfies 0.05?z?0.60, and x+y+z=1 is satisfied, and are oriented in a (111) plane in a pseudocubic expression.

Abstract: There are provided a piezoelectric device, an inkjet print head, and a method of manufacturing the same. The piezoelectric device includes piezoelectric ceramic powder containing 90 parts by weight or more to less than 100 parts by weight of Pb(Zr, Ti)O3, and more than 0 part by weight to 10 parts by weight or less of glass frit, based on 100 parts by weight of a piezoelectric substance composition for the piezoelectric device, wherein the glass frit contains 10 to 20 parts by weight of ZnO, based on 100 parts by weight of glass frit.

Abstract: Methods for forming lead zirconate titanate (PZT) nanoparticles are provided. The PZT nanoparticles are formed from a precursor solution, comprising a source of lead, a source of titanium, a source of zirconium, and a mineraliser, that undergoes a hydrothermal process. The size and morphology of the PZT nanoparticles are controlled, in part, by the heating schedule used during the hydrothermal process.

Abstract: Provided is a piezoelectric material having good piezoelectric properties and a Curie temperature (Tc) of 150° C. or higher, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a sintered body made of a perovskite-type metal oxide represented by the following general formula (1): xBi(Mg1/2Ti1/2)O3-(1-x)BaTiO3 (1), where x satisfies 0.17?x?0.8, in which an average grain size of grains contained in the sintered body is 0.5 ?m or larger to 10 ?m or smaller, and the sintered body is polycrystalline. In addition, the piezoelectric device includes a piezoelectric material and a pair of electrodes disposed in contact with the piezoelectric material, in which the piezoelectric material is the above-mentioned piezoelectric material.

Abstract: To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.

Abstract: Piezoelectric ceramics that can be used in high temperature actuators. The piezoelectric ceramics have various desirable properties, for example the materials do not depole up to about 400° C. and have large piezoelectric coefficients>400 pm/V. In addition the thickness mode electromechanical coupling coefficient is large, increasing from 0.5 to 0.65 with temperature. The planar electromechanical coefficient is around 0.40 and does not show a significant dependence on temperature. These materials are highly polarizable with remnant polarization around 50 ?C/cm2 and are electrically hard with coercive field above 20 kV/cm. They exhibit single crystal like ferroelectric behavior with square hysteresis loops. Such properties make these materials a piezoelectric ceramic that can be used in stack actuators at high temperatures. Methods for preparing the piezoelectric ceramics are also disclosed.

Abstract: There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0?x?1, 0?y?1, 0?z?0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.

Abstract: A processing technology is for the fabrication at low temperatures of ferroelectric crystalline oxide thin films, among others PbZrxTi1-xO3 (PZT) (<400° C. for PZT) with ferroelectric properties appropriate for integration in devices. The method is also for the fabrication of ferroelectric thin films of bronze tungsten (A2B2O6), perovskite (ABO3), pyrochlore (A2B2O7) and bismuth-layer (Bi4Ti3O12) structures, in which A and B are mono, bi-, tri-, tetra- and pentavalent ions.

Abstract: A piezoelectric solid solution composition containing, as a main component, a composition represented by the following general formula: {Mx(NayLizK1-y-z)1-x}1-m{(Ti1-u-vZruHfv)x(Nb1-wTaw)1-x}O3 is disclosed. In the formula, M represents a combination of at least one member selected from the group consisting of (Bi0.5K0.5), (Bi0.5Na0.5) and (Bi0.5Li0.5) and at least one member selected from the group consisting of Ba, Sr, Ca and Mg; and in the formula, x, y, z, u, v, w and m are in the following ranges: 0.06<x?0.3, 0?y?1, 0?z?0.3, 0?(y+z)?1, 0<u?1, 0?v?0.75, 0?w?0.2, 0<(u+v)?1 and ?0.06?m?0.06. This solid solution composition preferably forms the same rhombohedral-tetragonal morphotropic phase boundary as in PZT, is environmentally friendly, and displays an excellent piezoelectric constant d33.

Abstract: A KNbO3—NaNbO3 piezoelectric porcelain composition which exhibits a larger piezoelectric constant than those of conventional ones and does not have any secondary phase transition point in the neighborhood of room temperature (10 to 40° C.), that is, a piezoelectric porcelain composition represented by the general formula: (1-y-z-w)(KxNa1-x)NbO3+yLiNbO3+zSrTiO3+wBiFeO3, wherein (KxNa1-x)NbO3 represents potassium sodium niobate; LiNbO3 represents lithium niobate; SrTiO3 represents strontium titanate; and BiFeO3 represents bismuth ferrate; with the proviso that 0.4<x<0.6, 0<y?0.1, 0<z<0.1, 0<w<0.09, and 0.03<y+z+w?0.12.

Abstract: A piezoelectric ceramic material has the general formula: P1-c-dDcZd(PbO)w where: 0<c?0.025; 0?d?0.05; 0?w?0.05; where P stands for a compound having the formula [Pb1-vAg1v][(Zr1-yTiy)1-uCuIIu]O3, where 0.50?1-y?0.60; 0<u?0.0495; 0?v?0.02, and D stands for a component of the general formula [(M1O)1-p(M2O)p]a[Nb2O5]1-a, where M1 stands for Ba1-tSrt, where 0?t?1, M2 stands for Sr and/or Ca, and 0<p<1 and ?<a<1 and Z stands for a compound of the general formula: Pb(L1Rr)O3 where L is present in the oxidation state II or III, and R is present in the oxidation state VI or V, and: LII is selected from among Fe, Mg, Co, Ni and Cu in combination with RVI=W, where 1=½ and r=½, or LIII is selected from among Fe, Cr and Ga in combination with Rv=Nb, Ta or Sb, where 1=½ and r=½, or LIII is selected from among Fe, Cr and Ga in combination with RVI=W, where 1=? and r=?.

Abstract: A compound (2), and a process to polarize it, are described able to form conductive or isolating tracks. The compound comprises a substrate of solvent, and a dispersion in the substrate. The dispersion comprises (i) a polymer (M) with double covalent conjugated bond, that is to say a heterocyclic compound formed of n atoms of carbon and an atom of a different type linked in a loop structure; and (ii) functionalising elements (Q1) of the polymer, so that the state of the polymer changes from insulator to conductor and vice versa when struck by an electromagnetic field.

Abstract: PZT ceramic materials having a base formula of: PbOaSrObMnOcSbOdZrOeTiOfNbOgCuOhCeOi where a ranges between 0.95 and 0.97; where b ranges between 0.015 and 0.025; where c ranges between 0.015 and 0.018; where d ranges between 0.03 and 0.04; where e ranges between 0.45 and 0.5; where f ranges between 0.45 and 0.5; where g ranges between 0.35 and 0.4; where h ranges between 0.005 and 0.015; and where i ranges between 0.003 and 0.005. Methods for preparing the PZT ceramic materials by combining oxides of Pb, Sr, Mn, Sb, Zr, Ti, Nb, Cu, and Ce and calcining the combined oxides so as to produce a PZT composition of the stated formula.

Abstract: It is an object of the present invention to provide a lead-free piezoelectric film including a lead-free ferroelectric material and having low dielectric loss and high piezoelectric performance comparable to that of PZT, and a method of manufacturing the lead-free piezoelectric film. The present invention is directed to a piezoelectric film comprising a (NaxBiy)TiO0.5x+1.5y+2?BaTiO3 layer with a (110) orientation, where 0.30?x?0. 46 and 0.51?y?0.62.

Abstract: This invention relates to a method of making lead-free piezoelectric ceramic films. Specifically, the invention is directed to a method for fabricating lead-free piezoelectric free standing films having enhanced piezoelectric properties. The films may be used for a number of applications including incorporation in microelectronic devices such as energy harvesting devices and sensor technologies.

Abstract: It is an object of the present invention to provide a lead-free piezoelectric film including a lead-free ferroelectric material and having low dielectric loss and high piezoelectric performance comparable to that of PZT, and a method of manufacturing the lead-free piezoelectric film. The present invention is directed to a piezoelectric film comprising a (NaxBiy)TiO0.5x+1.5y+2-BaTiO3 layer with a (111) orientation, where 0.30?x?0.46 and 0.51?y?0.62.