Abstract: A method of manufacturing a microstructure of perovskite-type oxide single crystal having a desired composition and exhibiting excellent properties. The method includes the steps of: (a) forming a coating layer on a surface of a seed single crystal substrate, the coating layer containing the same metallic elements as those in a predetermined perovskite-type oxide; (b) forming a joint body having a micro-structured precursor of the predetermined perovskite-type oxide adhered to a surface of the coating layer; and (c) heat-treating the joint body to induce solid phase epitaxy, and thereby, single-crystallizing the precursor.

Abstract: Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(SixGeyTiz)O3 (here, 0?x?1, 0?y?1, and 0?z?0.5), the piezoelectric element includes the piezoelectric material and a pair of electrodes sandwiching the piezoelectric material, and at least one of the pair of electrodes is made of SrRuO3 or Ni.

Abstract: There is provided a piezoelectric ceramic composition that contains Na, Bi, Ti and Co wherein the composition ratio of Na, Bi, Ti and Co in terms of oxides thereof is in the following composition range (1): aNa2O-bBi2O3-cTiO2-dCoO??(1) where a, b, c and d are mole fractions; 0.03?a?0.042; 0.330?b?0.370; 0.580?c?0.620; 0<d?0.017; and a+b+c+d=1.

Abstract: A piezoelectric substance which is made of oxide with perovskite type structure which is made of ABO3, where a principal component of A is Pb, and principal components of B contain at least two kinds of elements among Nb, Mg, Zn, Sc, Cd, Ni, Mn, Co, Yb, In, and Fe, and Ti, characterized by being a uniaxial orientation crystal or a single crystal which has an a-domain and a c-domain of tetragonal.

Abstract: The piezoelectric/electrostrictive properties and mechanical durability of a piezoelectric/electrostrictive ceramic can be improved. A piezoelectric/electrostrictive device has a laminated structure in which an electrode film, a piezoelectric/electrostrictive film, an electrode film, an piezoelectric/electrostrictive film, and an electrode film are laminated in the order mentioned on a thin portion of a substrate. The piezoelectric/electrostrictive films are ceramic films with a matrix of perovskite oxide that contains lead (Pb) as an A-site component and nickel (Ni), aluminum (Al), niobium (Nb), zirconium (Zr), and titanium (Ti) as B-site components. The piezoelectric/electrostrictive films are formed by firing as a unit the substrate that contains aluminum oxide and an intermediate coating film of perovskite oxide that contains components other than aluminum so that aluminum oxide is diffused from the substrate to the intermediate coating film.

Abstract: A piezoelectric ceramic composition including potassium-sodium-lithium niobate, bismuth-sodium titanate and bismuth ferrate is provided. A piezoelectric ceramic obtained by firing the piezoelectric ceramic composition, wherein the electromechanical coupling factor is high, the piezoelectric g33 constant, in particular, is large, the second phase transformation does not exist in the temperature range of ?40 to 150° C. in at least one of a temperature-dependent variation of a resonance frequency, a temperature-dependent variation of an anti-resonance frequency and a temperature-dependent variation of piezoelectric g33 constant, and a good heat-resistant property is obtained, is provided.

Abstract: There is disclosed stereolithographic manufacture of more complex components including at least one active material without the need for fabrication. Fabrication can introduce component discontinuities that hinder performance of the final component. Thus, some embodiments entail a method of manufacture for complex, field activated components such as piezoelectric or magnetostrictive sensors or actuators.

Abstract: A piezoelectric ceramic composition includes a main component represented by general formula {(Pb1-x-yCaxSry) {Ti1-z(Ni1/3Nb2/3)z}O3}, wherein 0?x?0.2 (preferably 0?x?0.15), 0?y?0.2 (preferably 0?y?0.1), 0.05?x+y?0.2, and 0.02?z?0.1. Furthermore, a Mn component is preferably present in an amount of 1.0 part by weight or less (excluding zero) (more preferably 0.05 to 1.0 part by weight) in terms of MnCO3 with respect to 100 parts by weight of the main component. A piezoelectric element includes a piezoelectric ceramic body composed of this piezoelectric ceramic composition. Firing can be performed at a low temperature of about 1,100° C. The piezoelectric element has a high Curie point Tc, can withstand solder reflow treatment, and achieves satisfactory piezoelectric properties.

Abstract: An oxide source material solution for forming an oxide film having a composition expressed by PbuZrxTi1-x-yMyO3 is presented. A composition of metal element constituents in the oxide source material solution is expressed by [Pb]:([Zr]+[Ti]+[M])=v:1, and a difference (v?u) in composition ratio of Pb between the oxide source material solution and the oxide film is 0.01 or less.

Abstract: A piezoelectric ceramic composition has the composition formula (Pb(a-b)Meb){(Ni(1-c).d/3Znc.d/3Nb2/3)zTixZr(1-x-z)}O3, wherein Me represents at least one element selected from the group consisting of Ba, Sr and Ca; a, b, c, d, x and z satisfy the inequalities 0.975?a?0.998, 0?b?0.05, 1<d?1.40, and 0.39?x?0.47; and c and z are located in a region surrounded by lines connecting Point A (z=0.25, c=0.1), Point B (z=0.25, c=0.85), Point C (z=0.1, c=0.6), Point D (z=0.075, 0.5), Point E (z=0.05, c=0.2), and Point F (z=0.05, c=0.1) or located on the lines in the z-c plane. Therefore, the piezoelectric ceramic composition can be fired at a low temperature and is effective in achieving a large piezoelectric constant, a high Curie point and a small dielectric constant. A piezoelectric actuator contains the piezoelectric ceramic composition.

Abstract: The piezoelectric element 20 of the invention comprises a pair of electrodes 2,3 and a piezoelectric ceramic 1 comprising as the major component a solid solution of the two components KNbO3 and BaTiO3. In the solid solution, the molar ratio of KNbO3 is 0.5-0.9 with respect to the total of the two components.

Abstract: A piezoelectric/electrostrictive ceramic composition is provided which exhibits high density and excellent crystallinity even in the case of firing under lower temperature conditions than in conventional cases, and which also exhibits excellent piezoelectric/electrostrictive properties. An ABO3 compound (first main component) with Bi at the A site and with B1 and B2 elements at the B site (B1 consists of at least one kind of element having an ionic valence of two or less and selected from the group consisting of Mg, Cr, Mn, Fe, Co, Ni, Cu, Zn, and rare-earth elements; and B2 consists of at least one kind of element having an ionic valence of four or more and selected from the group consisting of V, Nb, Ta, Sb, Mo, and W) is dissolved in the form of a solid solution into another ABO3 compound (second main component) with at least Pb at the A site.

Abstract: A piezoelectric perovskite mixed oxide compound has the general formula (BiFeO3)x—(PbTiO3)1-X and contains up to 5 at % lanthanum or other rare earth substitution, in which x has a value in the range 0.5 to 0.9. Such compounds are capable of withstanding gas turbine operating temperatures and are suitable for use in sensing and actuation functions in aerospace and other applications.

Abstract: A piezoelectric body includes a perovskite type compound that is expressed by a compositional formula being Pb (Zrx Ti1-x)1-y My O3, where M is at least one of Ta and Nb, x is in a range of 0.51?x?0.57, and y is in a range of 0.05?y<0.2, wherein the perovskite type compound contains at least one of SiO2 and GeO2 as an additive, and the additive is added in an amount of 0.5 mol % or higher but 5 mol % or lower with respect to the amount of perovskite type compound.

Abstract: The present invention provides a lithium tantalate (LT) single crystal or a lithium niobate (LN) single crystal, which has strong resistance to stress shock or thermal shock, and a surface acoustic wave filter comprising a piezoelectric substrate produced from the single crystal. The lithium tantalate single crystal or lithium niobate single crystal of the invention contains at least one additional element selected from the group consisting of iron, copper, manganese, molybdenum, cobalt, nickel, zinc, carbon, magnesium, titanium, tungsten, indium, tin, rhenium, scandium, rhodium, ruthenium, palladium, silver, platinum, gold, yttrium, neodymium, iridium, germanium, barium, cesium, strontium, gallium, cerium and other transition elements at a ratio of from 0.002 wt % or more to 0.1 wt % or less, and has excellent stress shock characteristics and thermal shock characteristics.

Abstract: A process for producing a piezoelectric oxide having a composition (Ba, Bi, A)(Ti, Fe, M)O3, where each of A and M represents one or more metal elements. The composition is determined so as to satisfy the conditions (1) and (2), 0.98?TF(P)?1.02,??(1) TF(BiFeO3)<TF(AMO3)<TF(BaTiO3),??(2) where TF(P) is the tolerance factor of the perovskite oxide, and TF(BaTiO3), TF(BiFeO3), and TF(AMO3) are respectively the tolerance factors of the oxides BaTiO3, BiFeO3, and AMO3.

Abstract: A Bi4Ti3O12 nanoplate, an array of such Bi4Ti3O12 nanoplate and their making methods as well as their applications are provided. Using a vapor phase growth method, a flux layer of VOx is deposited on a SrTiO3 (001) faced substrate and then Bi4Ti3O12 is deposited on the flux layer. A Bi4Ti3O12 single crystal nanoplate is formed standing up on the flux layer in the form of a rectangular solid whose independent three sides are crystallographically oriented in directions coincident with particular crystallographic directions of the single crystal substrate, respectively. The nanoplates as a nanostructure grown by the bottom-up method are substantially fixed in shape and are densely arrayed not in contact with one another, and are applicable to a low-cost ferroelectric memory and the like.

Abstract: A piezoelectric ceramic which has a large value of coercive electric field and, in addition, which can be fired at low temperatures of 950° C. or lower, is provided. It has a composition represented by Pbx-a-dBiaM3d{M1b(M21/3Nb2/3)yZr1-b-y-zTiz}O3 where M1 and M2 represent, independently, at least one of Ni and Zn, and M3 represents at least one of Ba and Sr, 0.05?a?0.15, 0<b?0.075, 0?(a?2b), 0?d?0.1, 0.97?x?1.00, 0.020?y?0.250, and 0.398?z?0.512. It is preferable that M1 represents Ni, and M2 represents at least one of Ni and Zn. Moreover, it is preferable that Ni is in the state of being segregated.

Abstract: A ternary single crystal relaxor piezoelectric grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.

Abstract: Piezoelectric/electrostrictive ceramics are provided, which exhibit only a small change in properties after polarization, high insulating properties, and narrow variations in durability. A piezoelectric/electrostrictive element has a laminated structure in which an electrode film, a piezoelectric/electrostrictive film, another electrode film, another piezoelectric/electrostrictive film, and another electrode film are laminated in order of mention on a thin portion of a substrate. The piezoelectric/electrostrictive films are ceramic films that include a perovskite oxide containing lead as an A-site component and magnesium, nickel, niobium, titanium, and zirconium as B-site components. Crystal grains in the piezoelectric/electrostrictive films have a core/shell structure with the shell portion having a higher concentration of nickel than the core portion and with the core portion having a higher concentration of magnesium than the shell portion.

Abstract: Nanotechnology methods for creating stoichiometric and non-stoichiometric substances with unusual combination of properties by lattice level composition engineering are described.

Abstract: Piezoelectric ceramics of the formula Pb(1-z)Mz(Mg1/3Nb2/3)x(ZryTi1-y)1-xO3 where M can be either Sr or Ba or both, and x is between 0.3 and 0.6, y is between 0.2 and 0.5, and z is between 0.04 and 0.08, wherein y=0.551?0.539x?0.593x2. The piezoelectric ceramic is provided as a composite perovskite structure, and may additionally include materials or dopants such as: PbO, HfO2, TeO2, WO3, V2O5, CdO, Tm2O3, Sm2O3, Ni2O3, and MnO2. The piezoelectric ceramics can be used to fabricate piezoelectric elements for a wide variety of devices that can be fabricated to exhibit high power applications including miniaturized displacement elements, buzzers, transducers, ultrasonic sensors and ultrasonic generators, and the like.

Abstract: A class of ceramic compositions according to the formula Pb(1-z)Mz(Mn1/3Sb2/3)x(ZryTi1-y)1-xO3 where M is selected to be either Sr or Ba, x is selected to be between 0.01 and 0.1, y is selected to be between 0.35 and 0.55, and z is selected to be between 0.01 and 0.10. In some embodiments of the above composition, one or more dopants is added to the compositions. The dopant(s) may be selected from the group comprising: PbO, CeO2, SnO2, Sm2O3, TeO2, MoO3, Nb2O5, SiO2, CuO, CdO, HfO2, Pr2O3, and mixtures thereof. The dopants can be added to the ceramic composition in individual amounts ranging from 0.01 wt % to up to 5.0 wt %. The preferred ceramic compositions exhibit one or more of the following electromechanical properties: a relative dielectric constant (?) of between 1200 and 2000, a mechanical quality factor (Qm) of between 1500 and 2800; a piezoelectric strain constant (d33) of between 250-450 pC/N, a dielectric loss factor (tan ?) of between 0.002-0.

Abstract: Piezoelectric compositions of the formula Pb(1-z)Mz(Mg1/3Nb2/3)x(ZryTi1-y)1-xO3 where M can be either Sr or Ba or both, x is between about 0.35 and about 0.40, y is between about 0.36 and about 0.42, and z is between about 0.04 and about 0.08. The piezoelectric ceramic is provided as a composite perovskite structure. Additional materials or dopants can be added to the piezoelectric ceramic of the present invention. Example of dopants that can be added to the piezoelectric ceramic include, but are not limited to: MnO2, Ni2O3, TeO3, TeO2, MoO3, Nb2O5, Ta2O5, CoCO3, and Y2O3. The piezoelectric ceramics of the present invention can be used to fabricate piezoelectric elements for a wide variety of devices that can be fabricated to exhibit high power applications including miniaturized displacement elements, buzzers, transducers, ultrasonic sensors and ultrasonic generators, and the like.

Abstract: There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3??(1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta and W, or a combination of the atoms of the plurality of elements.

Abstract: A perovskite oxide having a composition expressed by a compositional formula, (Pb1-x+?Ax)(ZryTi1-y)1-zMzOw, where Pb and A are A-site elements, Zr, Ti, and M are B-site elements, A represents one or more A-site elements other than Pb, M represents one or more of elements Nb, Ta, V, Sb, Mo, and W, x, y, and z satisfy inequalities, 0.01<x?0.4, 0<y?0.7, and 0.1?z?0.4, and ? is approximately 0, w is approximately 3, ? and w may deviate from 0 and 3, respectively, within ranges of ? and w in which the composition expressed by the compositional formula (Pb1-x+?Ax)(ZryTi1-y)1-z-MzOw can substantially realize a perovskite structure.

Abstract: Provided is a piezoelectric ceramic composition capable of being sintered at low temperatures and in a low-oxygen reductive atmosphere and capable of attaining a sufficient displacement even at high voltages of 1 kV/mm or more. The piezoelectric ceramic composition includes: a composite oxide, as a main constituent thereof, represented by the following composition formula; Cu and/or Ag, each as a first additive, Cu being included in a content ?, in terms of Cu2O, falling within a range 0<??0.5% by mass and Ag being included in a content ?, in terms of Ag2O, falling within a range 0<??0.4% by mass, in relation to the main constituent; wherein: composition formula: Pba[(Zn1/3Nb2/3)xTiyZrz]O3, where 0.96?a?1.03, 0.005?x<0.05, 0.42?y?0.53, 0.45?z?0.56, and x+y+z=1.

Abstract: A piezoelectric ceramic composition is represented by [(Pb1-xXx)a{(Nib/3Nb2/3)cTidZr1-c-d}O3] in which X is at least one of Sr, Ba, Ca and La), and the compositional amounts x, a, b, c, and d respectively satisfy 0.001?x?0.1, 0.930?a?0.998, 1.02?b?1.40, 0.1?c?0.6 and 0.3?d?0.6. The specific surface area of the material powder before firing is preferably set to 5 m2/g or more. A piezoelectric ceramic body 1 is fabricated using the piezoelectric ceramic composition. In this manner, a sufficiently high piezoelectric constant can be obtained not only in the electric field range of 400 to 500 V/mm but also in an electric field range of 1 kV/mm or more. Furthermore, a piezoelectric ceramic composition that can be fired at a low-temperature and a piezoelectric ceramic electronic component using this composition can be provided.

Abstract: To provide a method for producing a piezoelectric ceramic which can improve toughness thereof. Provided is a method for producing a piezoelectric ceramic which includes a step of polarizing a piezoelectric ceramic having a main component represented by a composition formula Pba[(MnbNbc)dTieZrf]O3, wherein a to f satisfy 0.98?a?1.01, 0.340?b?0.384, 0.616?c?0.660, 0.08?d?0.12, 0.500?e?0.540, 0.37?f?0.41, and bd+cd+e+f=1, and 1 to 10% by weight of Al in terms of Al2O3 as an additive, and heat-treating the polarized piezoelectric ceramic for 10 to 60 minutes in a range of 200 to 300° C. As a result of this heat treatment, toughness of the piezoelectric ceramic can be improved.

Abstract: A class of ceramic compositions according to the formula Pb(1-z)Mz(Mn1/3Sb2/3)x(ZryTi1-y)1-xO3 where M is selected to be either Sr or Ba, x is selected to be between 0.01 and 0.1, y is selected to be between 0.35 and 0.55, and z is selected to be between 0.01 and 0.10. In some embodiments of the above composition, one or more dopants is added to the compositions. The dopant(s) may be selected from the group comprising: PbO, CeO2, SnO2, Sm2O3, TeO2, MoO3, Nb2O5, SiO2, CuO, CdO, HfO2, Pr2O3, and mixtures thereof. The dopants can be added to the ceramic composition in individual amounts ranging from 0.01 wt % to up to 5.0 wt %. The preferred ceramic compositions exhibit one or more of the following electromechanical properties: a relative dielectric constant (?) of between 1200 and 2000, a mechanical quality factor (Qm) of between 1500 and 2800; a piezoelectric strain constant (d33) of between 250-450 pC/N, a dielectric loss factor (tan ?) of between 0.002-0.

Abstract: The present invention provides a piezoelectric material which can be applied even to the MEMS technique, exhibits satisfactory piezoelectricity even at high ambient temperatures and is environmentally clean, namely, a piezoelectric material including an oxide obtained by forming a solid solution composed of two perovskite oxides A(1)B(1)O3 and A(2)B(2)O3 different from each other in crystalline phase, the oxide being represented by the following general formula (1): X{A(1)B(1)O3}?(1?X){A(2)B(2)O3}??(1) wherein “A(1)” and “A(2)” are each an element including an alkali earth metal and may be the same or different from each other; “B(1)” and “B(2)” each include two or more metal elements, and either one of “B(1)” and “B(2)” contains Cu in a content of 3 atm % or more; and “X” satisfies the relation 0<X<1.

Abstract: A piezoelectric element includes an electrode disposed on at least one of the front and back surfaces of a piezoelectric material prepared by molding a mixture containing a Pb component, a Zr component, a Ti component, a Sr component, a Nb component, and a Zn component and then firing the molded product. When the piezoelectric material is represented by the general formula Pb(ZraTi1-a)O3+bSrO+cNbO2.5+dZnO, the relative amounts of the respective components, for example, satisfy the relationships, a=0.51, b=2.0×10?2, c=1.50×10?2, d=0.5×10?2, and c/d=3.0.

Abstract: A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has.

Abstract: A piezoelectric ceramic composition represented by the formula (1-x) (K1-a-bNaaLib)m(Nb1-c-dTacSbd)O3-x(K1/4Na1/4M31/2) M4O3, wherein M3 represents a metal element that is at least one of Yb, Y, In, Nd, Eu, Gd, Dy, Sm, Ho, Er, Tb, and Lu; M4 represents a metal element that is at least one of Ti, Zr, and Sn; and x, a, b, c, d, and m satisfy the inequalities 0.001?x?0.1, 0?a?0.9, 0?b?0.3, 0?a+b?0.9, 0?c?0.5, 0?d?0.1, and 0.7?m?1.3. The piezoelectric ceramic composition is not sintering resistant and has desired, sufficient piezoelectric properties as well as a sufficient firing temperature range suitable for mass production. Furthermore, the piezoelectric ceramic composition is effective in preventing insufficient polarization and effective in increasing the yield of products.

Abstract: A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K3T, high piezoelectric constants (d33 and k33), high phase transition temperatures (Tc and TRT), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.

Abstract: A piezoceramic composition has a nominal empirical formula of Pb1-aREbAEc[ZrxTiy(FefWw)z]O3. RE is a rare earth metal with a fraction b and AE is an alkaline earth metal with a fraction c. Iron is present with an iron fraction f·z, and tungsten with a tungsten fraction w·z. In addition, the following relationships apply: a<1; 0=b=0.15; 0=c=0.5; f>0; w>0; 0.1=f/w=5; x>0; y>0; z>0 and x+y+z=1. A method of producing a piezoceramic material using the piezoceramic composition has the steps: a) provision of a green ceramic body with the piezoceramic composition, and b) heat treatment of the green body, a piezoceramic of the piezoceramic material being produced from the piezoceramic composition. The heat treatment encompasses calcining and/or sintering. The piezoceramic composition undergoes compaction at below 1000° C.

Abstract: The present invention provides a piezoelectric ceramic composition, for producing piezoelectric elements exhibiting high piezoelectric strain constant d33 and high Curie temperature Tc, which composition includes a perovskite PbZrO3 (a), a perovskite PbTiO3 (b), SrO (c), Nb2O5 (d) and ZnO (e), and relative amounts of the components (a), (b), (c) (d) and (e) satisfy the general formula: Pb(ZraTi1-a)O3+bSrO+cNbO2.5+dZnO wherein 0.51?a?0.54; 1.1×10?2?b?6.0×10?2; 0.9×10?2?c?4.25×10?2; 0.1×10?2?d?1.25×10?2; and 2.9?c/d?15.0.

Abstract: A piezoelectric body contains a ferroelectric substance phase having characteristics such that, in cases where an applied electric field is increased from the time free from electric field application, phase transition of the ferroelectric substance phase to a ferroelectric substance phase of a different crystal system occurs at least two times. The piezoelectric body should preferably be actuated under conditions such that a minimum applied electric field Emin and a maximum applied electric field Emax satisfy Formula (1): Emin<E1<Emax ??(1) wherein the electric field E1 represents the electric field at which the first phase transition of the ferroelectric substance phase begins.

Abstract: To obtain a piezoelectric ceramic composition having extremely high heat resisting property. Provided is a piezoelectric ceramic composition comprising a main component represented by Pba[(MnbNbc)dTieZrf]O3 (wherein 0.98?a?1.01, 0.340?b?0.384, 0.616?c?0.660, 0.08?d?0.12, 0.500?e?0.540, 0.37?f?0.41, bd+cd+e+f=1), and 1 to 10% by weight of Al in terms of Al2O3 as an additive. Preferably, b is such that 0.345?b?0.375 and c is such that 0.625?c?0.655, and the Al as the additive is preferably 2 to 6% by weight in terms of Al2O3.

Abstract: Piezoelectric ceramics of the formula Pb(1-z)Mz(Mg1/3Nb2/3)x(ZryTi1-y)1-xO3 where M can be either Sr or Ba or both, and x is between 0.3 and 0.6, y is between 0.2 and 0.5, and z is between 0.04 and 0.08, wherein y=0.551?0.539x?0.593x2. The piezoelectric ceramic is provided as a composite perovskite structure, and may additionally include materials or dopants such as: PbO, HfO2, TeO2, WO3, V2O5, CdO, Tm2O3, Sm2O3, Ni2O3, and MnO2. The piezoelectric ceramics can be used to fabricate piezoelectric elements for a wide variety of devices that can be fabricated to exhibit high power applications including miniaturized displacement elements, buzzers, transducers, ultrasonic sensors and ultrasonic generators, and the like.

Abstract: A piezoelectric ceramic composition excellent in all of the electric property Qmax, heat resisting properties and temperature characteristics of oscillation frequencies is provided. The piezoelectric ceramic composition comprises a phase mainly comprising lead zirconate titanate having a perovskite structure and an Al-containing phase. In the piezoelectric ceramic composition, the main component preferably comprises Mn and Nb, and is preferably represented by a composition formula of Pb?[(Mn1/3Nb2/3)xTiyZrz]O3 (wherein 0.97???1.01, 0.04?x?0.16, 0.48?y?0.58, 0.32?z?0.41).

Abstract: A piezoceramic composition of a calculated empirical formula Pb1-aREbAEc[ZrxTiy(NinMom)z]O3, wherein RE represents a rare earth metal having a rare earth metal content b, AE represents an alkaline earth metal having an alkaline earth metal content c, nickel is provided with a nickel content n.z, and molybdenum is provided with a molybdenum content m.z. Furthermore, the following correlations apply: a<1; 0=b=0.15; 0=c=0.5; n>0; m>0; 0.1=n/m=5; x>0; y>0; z>0, and x+y+z=1. In a method for producing a piezoceramic component a) a green ceramic member containing the piezoceramic composition is supplied; and b) the green member is subjected to a thermal treatment such that the piezoceramic material of the component is produced from the piezoceramic composition. The thermal treatment encompasses calcining and/or sintering of the piezoceramic composition. The piezoceramic composition is compressed below 1000° C.

Abstract: A piezoelectric ceramic composition having a large piezoelectric constant (d) and as well having a large Qm value is to be provided. The piezoelectric ceramic composition aimed at has a composition corresponding to a solid solution containing a first compound possessing a rhombohedral crystal-based perovskite structure, a second compound possessing a tetragonal crystal-based perovskite structure, and a third compound. The third compound is a compound oxide containing Bi as a first component element, Mn as a second component element, and a tetravalent metallic element or a pentavalent metallic element as a third component element. The tetravalent metallic element is at least one member selected from the group consisting of Ti, Zr, Hf, and Sn. The pentavalent metallic element is at least one member selected from the group consisting of Nb, Ta, and Sb.

Abstract: A piezoelectric ceramic composition that acquires excellent piezoelectric properties even when it is fired at a low temperature is offered. The piezoelectric ceramic composition possesses a composition corresponding to a solid solution that contains a first compound having a rhombohedral crystal-based perovskite structure, a second compound having a tetragonal crystal-based perovskite structure, and a third compound. The third compound is a compound oxide containing Bi as a first component element, Fe or Mn as a second component element, and a hexavalent metallic element as a third component element. The hexavalent metallic element is at least one kind selected from W and Mo.

Abstract: The invention relates to piezoelectric ceramic materials based on the system Pb(Zr,Ti)O3, i.e. solid solutions of lead zirconate PbTO3, characterized by having very good dielectric and electromechanical properties that can be adopted for different uses by modifying the composition. The piezoelectric ceramic materials based on the system Pb(Zr,Ti)O3 are modified in order to obtain a high level of piezoelectric activity. The invention provides piezoelectric ceramic materials based on lead zirconate titanate (PZT) having the crystal structure of perovskite with formula A2+B4+O32?, which are characterized by a substitution of heterovalent acceptor and donator ions at Zr/Ti sites.

Abstract: A piezoelectric ceramic composition includes: a composite oxide, as a main component thereof, represented by the composition formula, Pba[(Zn1/3Nb2/3)xTiyZrz]O3, wherein a, x, y and z satisfy the following relations, 0.96?a?1.03, 0.005?x?0.047, 0.42?y?0.53, 0.45?z?0.56, and x+y+z=1, and the following additives in the indicated percentages by mass in relation to the main component, Cu as a first additive, in a content ?, in terms of Cu2O, falling within a range 0<??0.5%; at least one of Li, Co, Ni, Ga and Mg, as a second additive, in a content ?, in terms of carbonate for Li, falling within a range 0<??0.1%, in a content ?1, in terms of oxide for Co, Ni and Ga, falling within a range 0<?1?0.2%, and in a content ?2, in terms of carbonate for Mg, falling within a range 0<?2?0.2%; and at least one of Ta, Nb, W and Sb, as a third additive, in a content ?, in terms of oxide, falling within a range 0<??0.6%.

Abstract: A piezoelectric/electrostrictive material having a nonstoichiometric composition represented by a general formula (1): (1?x)(BiaNabTiO3+?)?x(KcNbO3+?) ??(1) wherein 0.01?x<0.08, a<0.5, 1.01?(a/b)?1.08, 0.92?(a+b)/c<0.99, and 0.9?c?1.1, and ??0 when ?=0 and ??0 when ?=0.

Abstract: A powder having a specific surface area of 1.8 to 11.0 m2/g was used as a powder to be sintered. Consequently, the powder has an improved sinterability, so that even by sintering at 1050° C. or lower, further at 1000° C. or lower, a piezoelectric ceramic having a high sintering density and desired piezoelectric properties can be obtained. The piezoelectric ceramic can have a main constituent represented by a composition formula (Pba1Aa2)[(Zn1/3Nb2/3)xTiyZrz]O3, wherein A represents at least one metal element selected from Sr, Ba and Ca, and 0.96?a1+a2?1.03, 0?a2?0.10, x+y+z=1, 0.05?x?0.40, 0.1?y?0.5 and 0.2?z?0.6.

Abstract: There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3 ??(1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta, and W, or a combination of the atoms of the plurality of elements.

Abstract: A piezoelectric ceramic composition has the composition formula (Pb(a-b)Meb){(Ni(1-c)/3Znc/3Nb2d/3)zTixZr(1-x-z)}O3, wherein Me represents at least one element selected from the group consisting of Ba, Sr and Ca; a, b, d, and x satisfy the inequalities 0.975?a?0.998, 0?b?0.05, 1<d?1.3, and 0.39?x?0.47; and c and z are located in a region surrounded by lines connecting Point A (z=0.25, c=0.1), Point B (z=0.25, c=0.85), Point C (z=0.1, c=0.6), Point D (z=0.075, c=0.5), Point E (z=0.05, c=0.2), and Point F (z=0.05, c=0.1) or located on the lines in the z-c plane. Therefore, the piezoelectric ceramic composition is effective in achieving a large piezoelectric constant, a small dielectric constant, and a high Curie point. A piezoelectric actuator contains the piezoelectric ceramic composition.