Abstract: A main component of a piezoelectric substance is PZT which has a perovskite type structure expressed as Pb(ZrxTi1-x)O3, in which x expresses an element ratio Zr/(Zr+Ti) of Zr and Ti in the formula, an element ratio Pb/(Zr+Ti) of Pb, Zr and Ti of the piezoelectric substance is 1.05 or more, an element ratio Zr/(Zr+Ti) of Zr and Ti is 0.2 to 0.8 inclusive, and a Curie temperature Tc of the piezoelectric substance and a Curie temperature Tc0 in bulk at an element ratio of Zr and Ti of the piezoelectric substance satisfy a relation of Tc>Tc0+50° C.

Abstract: Provided is a manufacturing method for preferentially-oriented oxide ceramics having a high degree of crystal orientation. The manufacturing method includes: obtaining slurry containing an oxide crystal B having magnetic anisotropy; applying a magnetic field to the oxide crystal B, and obtaining a compact of the oxide crystal B; and subjecting the compact to oxidation treatment to obtain preferentially-oriented oxide ceramics including a compact of an oxide crystal C having a crystal system that is different from a crystal system of one of a part and a whole of the oxide crystal B. By (1) reacting raw materials, (2) reducing the oxide crystal A, or (3) keeping the oxide crystal A at high temperature and quenching the oxide crystal A, the oxide crystal B is obtained to be used in the slurry.

Abstract: Provided is a lead-free piezoelectric thin film containing a lead-free ferroelectric material and having low dielectric loss, high electromechanical coupling coefficient and high piezoelectric constant comparable to that of lead zirconate titanate (PZT). The piezoelectric thin film of the present invention has a (Bi, Na, Ba)TiO3 film composed of a perovskite composite oxide (Bi, Na, Ba)TiO3. The (Bi, Na, Ba)TiO3 film has (001) orientation and further contains Ag. The (Bi, Na, Ba)TiO3 film has a mole ratio of Ag to Ti of at least 0.001 but not more than 0.01.

Abstract: Disclosed is a piezoelectric ceramic indicated by the composition formula Bi4Ti3O12.?[(1??)(M11-?Ln?)TiO3+?M2M3O3], wherein: ?, ?, and ? satisfy 0.3???0.95, 0??0.5, and 0???0.5; M1 is at least one chosen from Sr, Ba, Ca, (Bi0.5Na0.5), (Bi0.55K0.5) and (Bi0.5Li0.5); M2 is at least one chosen from among Bi, Na, K and Li; M3 is at least one chosen from Fe and Nb; and includes 0.01-0.7 mass % of Co in CoO conversion to 100 mass % of bismuth layered compound where Ln is lanthanoid.

Abstract: A piezoelectric ceramic that includes barium titanate and 0.04 mass % or more and 0.20 mass % or less manganese relative to barium titanate. The piezoelectric ceramic is composed of crystal grains. The crystal grains include crystal grains A having an equivalent circular diameter of 30 ?m or more and 300 ?m or less and crystal grains B having an equivalent circular diameter of 0.5 ?m or more and 3 ?m or less. The crystal grains A and the crystal grains B individually form aggregates and the aggregates of the crystal grains A and the aggregates of the crystal grains B form a sea-island structure.

Abstract: A piezoelectric ceramic composition is provided which contains Perovskite oxides expressed by General Formula 1 below and an aluminum compound, and in which the content ratio of the aluminum compound to the Perovskite oxides is from 1% by mass to 11% by mass, (Pb?-?-?-?M1?M2?Bi?)[Ti{1-(x+y+z)}ZrxMnyNbz]O3??(1) wherein in the General Formula (1), M1 represents at least one kind of element selected from the group consisting of La, Ce, Pr, and Nd, M2 represents at least one kind of element selected from the group consisting of Sr, Ca, and Ba, and ?, ?, ?, ?, x, y, and z satisfy the following numerical conditions: 0.96???1.01 0.03???0.07 0???0.10 0???0.02 0?x?0.24 0.02?y?0.04 0.03?z?0.

Abstract: A micro-deformable piezoresistive material is provided, including a hard plastic body, a micro-deformable rough texture surface, and a plurality of conductive particles. The micro-deformable rough texture surface is formed on a side of the hard plastic body, wherein the maximum deformation of the rough texture surface is far less than the thickness of the hard plastic body. Additionally, the conductive particles are evenly dispersed in the plastic body.

Abstract: Problem to be Solved An object of the present invention is to provide a lead-free piezoelectric material capable of showing a high piezoelectric coefficient (d33>500 pC/N) exceeding that of soft PZT. Solution The present invention 1 is a lead-free piezoelectric material containing no toxic element such as Pb, comprising a pseudo-binary solid solution of {[(Ba1-x1M1x1)((Ti1-xZrx)1-y1N1y1)O3]-? % [(Ba1-yCay)1-x2M2x2)(Ti1-y2N2y2)O3]} (wherein M1, N1, M2 and N2 represent an additive element)(abbreviated as BZT-? % BCT).

Abstract: A piezoelectric ceramic 10 composed mainly of a three-component solid solution represented by the following general formula (1), wherein x, y and z in general formula (1) satisfy the following formulas (2), (3), (4) and (5). x(Bi1/2Na1/2)TiO3-y(Bi1/2Li1/2)TiO3-z(Bi1/2K1/2)TiO3??(1) 0.80?x?0.96??(2) 0.02?y?0.08??(3) 0.01?z?0.

Abstract: A method for producing a crystallographically oriented ceramic according to the present invention includes a preparation step of preparing a template layer having uniform crystal orientation in a predetermined direction, a formation step of forming a shaped body including a matrix layer arranged on the template layer, the matrix layer being composed of a mixed material that contains a lead-containing material and an additional material containing lithium and boron, and a firing step of firing the shaped body formed in the formation step at a predetermined firing temperature. Furthermore, after the firing step, a post-annealing step of heating the shaped body to remove lithium and boron may be included.

Abstract: Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1): xABO3-yA?BO3-zA?B?O3 in which A is a Bi element; A? is a rare earth element including La; B is at least one element selected from Ti, Zn, Sn and Zr; A? is at least one element selected from Ba, Sr and Ca; B? is at least one element selected from divalent, trivalent, pentavalent, tetravalent, and hexavalent elements; and x is a value of 0.10 or more and 0.95 or less, y is a value of 0 or more and 0.5 or less, and z is a value of 0 or more and 0.7 or less, provided that x+y+z=1.

Abstract: A method for producing crystalline particles according to the present invention includes a mixing step of producing a mixed material containing a lead-containing material and an additional material containing lithium and boron and a first firing step of firing the mixed material at a predetermined firing temperature to form polyhedral crystalline particles. It is possible to produce a crystallographically oriented ceramic by preparing a template layer having uniform crystal orientation in a predetermined direction by fixing the crystalline particles on a substrate, forming a shaped body including a matrix layer arranged on the template layer, the matrix layer being composed of a mixed material that contains a lead-containing material and an additional material containing lithium and boron, and firing the shaped body.

Abstract: A perovskite oxide represented by a general expression, (Aa, Bb)(Cc, Dd, Xx)O3. (where, A: an A-site element, A=Bi, 0<a, B: one or more types of A-site elements, 0?b<1.0, C: an B-site element, C?Fe, 0<c<1.0, D: one or more types of B-site elements, 0?d<1.0, 0<b+d, X: one or more types of B-site elements, the average valence of which is greater than the average valence of C and D in chemical formula, 0<x<1.0, (average valence of A-site in chemical formula)+(average valence of B-site in chemical formula)>6.0, 0: oxygen, and standard molar ratio among A-site elements, B-site elements, and oxygen is 1:1:3, but it may deviate from the standard within a range in which a perovskite structure is possible.

Abstract: There is provided a piezoelectric element/electrostrictive element having little decease of Qm even in a high electric field in the case of a piezoelectric element. The piezoelectric body/electrostrictive body is characterized in that the rate of Qm in an electric field of 10 V/mm is 30% or more with respect to Qm in an electric field of 1 V/mm.

Abstract: A perovskite oxide material containing: BiFeO3 as a first component; a second component containing at least one perovskite oxide which is constituted by A-site atoms having an average ionic valence of two and has a tendency to form a tetragonal structure; and a third component containing at least one perovskite oxide which has a tendency to form one of monoclinic, triclinic, and orthorhombic structures; where each perovskite oxide in the first component, the second component, and the third component contains A-site atoms, B-site atoms, and oxygen atoms substantially in a molar ratio of 1:1:3, and the molar ratio can deviate from 1:1:3 within a range

Abstract: According to the state of the art, piezoceramic multi-layer elements are sintered in air at temperatures of approximately 1100 DEG C or higher. Therefore, only a noble metal having a high melting temperature can be used as the inner electrode. Non-noble metals would oxidize. Therefore, a silver-palladium alloy having up to 40% palladium is normally used. However, such a measure is associated with high material costs. Lower melting temperatures of the inner electrode material, however, also require a ceramic material having correspondingly low sintering temperatures. The invention therefore proposes that an electrically non-conductive sintering additive added be added to the base material, and that the inner electrode comprise silver, preferably pure silver, as the main material component thereof, and an electrically non-conductive material component and/or a metal alloy or metal oxide mixture.

Abstract: Compositions and devices for harvesting electrical energy from mechanical and thermal energy, storing such produced energy, and sensing strain based on low cost materials and processes. In embodiments, the compositions are flexible and include a flexible polymer embedded and coated with a nanostructured piezoelectric material.

Abstract: A KNbO3—NaNbO3 piezoelectric porcelain composition which exhibits a larger piezoelectric constant than those of conventional ones and does not have any secondary phase transition point in the neighborhood of room temperature (10 to 40° C.), that is, a piezoelectric porcelain composition represented by the general formula: (1-y-z-w)(KxNa1-x)NbO3+yLiNbO3+zSrTiO3+wBiFeO3, wherein (KxNa1-x)NbO3 represents potassium sodium niobate; LiNbO3 represents lithium niobate; SrTiO3 represents strontium titanate; and BiFeO3 represents bismuth ferrate; with the proviso that 0.4<x<0.6, 0<y?0.1, 0<z<0.1, 0<w<0.09, and 0.03<y+z+w?0.12.

Abstract: The present invention provides a piezoelectric ceramic composition having a high thermal resistance and a high piezoelectric distortion constant and a piezoelectric element using the piezoelectric ceramic composition. The piezoelectric ceramic composition of the present invention contains Na, Bi, Ti, Cr and O, wherein the content ratio of Na, Bi, Ti and Cr in terms of oxides thereof falls within the following composition range: aNa2O-bBi2O3-cTiO2-dCrO where a, b, c and d are mole fractions; 0.030?a?0.042; 0.330?b?0.370; 0.580?c?0.620; 0?d?0.017; and a+b+c+d=1. The piezoelectric ceramic composition preferably has a main crystal phase of bismuth layer-structured ferroelectric, more preferably Na0.5Bi4.5Ti4O15 crystal. The piezoelectric element of the present invention includes a piezoelectric body formed of the piezoelectric ceramic composition and at least a pair of electrodes held in contact with the piezoelectric body.

Abstract: A piezoelectric material of the invention includes a perovskite oxide (P) (which may contain inevitable impurities) represented by the formula below: Pba(Zrx, Tiy, Mb-x-y)bOc ??(P) (wherein M represents one or two or more metal elements; wherein 0<x<b, 0<y<b, 0?b-x-y; and wherein a molar ratio a:b:c is 1:1:3 as a standard; however, the molar ratio may be varied from the standard molar ratio within a range where a perovskite structure is obtained). The perovskite oxide (P) has a signal intensity ratio I(Pb4+)/I(Pb2+) between Pb4+ and Pb2+ of not less than 0.60 measured through XAFS.

Abstract: This invention relates to lead-free piezoelectric ceramic films and a method of making thereof. Specifically, the invention is directed to a method for fabricating lead-free piezoelectric free standing films having enhanced piezoelectric properties. The films may be used for a number of applications including incorporation in microelectronic devices such as energy harvesting devices and sensor technologies.

Abstract: Provided is a piezoelectric material having a good piezoelectric property and Curie temperature (Tc) of 150° C. or higher, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a sintered body made of a perovskite-type metal oxide represented by the following general formula (1): xBi(Mg1/2Ti1/2)O3?(1?x)BaTiO3 (1), where x satisfies 0.17?x?0.8, in which an average grain size of grains contained in the sintered body is 0.5 ?m or larger to 10 ?m or smaller, and the sintered body is polycrystal. In addition, the piezoelectric device includes a piezoelectric material and a pair of electrodes disposed in contact with the piezoelectric material, in which the piezoelectric material is the above-mentioned piezoelectric material.

Abstract: A method to produce low-temperature sinterable powders which are then subsequently used to fabricate freestanding piezoelectric films with very large electric-field-enhanced piezoelectric response is provided. The ?d31 coefficient for PMN-PT layers can be as high as 2000 pm/V, larger than that of commercial single crystalline PMN-PT bulk materials, at 10 kV/cm (or 20 V over the 20-micron film thickness). In contrast to single crystals, the polycrystalline freestanding films are easy to fabricate and can be made into any size. The films are also easily miniaturized. The method can be applied to nearly any piezoelectric material.

Abstract: A ceramic material includes lead zirconate titanate, which additionally contains Nd and Ni.

Abstract: Piezoelectric actuators having a composition of Pb1.00+x(Zr0.52Ti0.48)1.00?yO3Nby, where x>?0.02 and y>0 are described. The piezoelectric material can have a Perovskite, which can enable good bending action when a bias is applied across the actuator.

Abstract: A main component has a general formula of {(1?x)(K1-a-bNaaLib)m(Nb1-c-dTacSbd)O3?x(M10.5Bi0.5)nM2O3} (wherein M1 is Ca, Sr or Ba, M2 is Ti, Zr or Sn, 0.005?x?0.5, 0?a?0.9, 0?b?0.3, 0?a+b?0.9, 0?c?0.5, 0?d?0.1, 0.9?m?1.1, and 0.9?n?1.1). At least one specific element selected from the group consisting of In, Sc, Y, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb and Lu is contained at as in sample numbers 46 to 48, 0.1 to 10 mol in total per 100 mols of the main component (preferably, 1.5 to 10 mol). This provides a piezoelectric ceramic composition and a piezoelectric ceramic electronic component that can have a desired high piezoelectric d constant in a consistent and highly efficient manner in both a very low electric field and a high electric field.

Abstract: A piezoelectric material of the invention includes a perovskite oxide (P) (which may contain inevitable impurities) represented by the formula below: Pba(Zrx,Tiy,Mb-x-y)bOc??(P) (wherein M represents one or two or more metal elements; wherein 0<x<b, 0<y<b, 0?b?x?y; and wherein a molar ratio a:b:c is 1:1:3 as a standard; however, the molar ratio may be varied from the standard molar ratio within a range where a perovskite structure is obtained). The perovskite oxide (P) has a signal intensity ratio I(Pb4+)/I(Pb2+) between Pb4+ and Pb2+ of more than 0 and less than 0.60 measured through XAFS.

Abstract: A piezoelectric solid solution composition containing, as a main component, a composition represented by the following general formula: {Mx(NayLizK1-y-z)1-x}1-m{(Ti1-u-vZruHfv)x(Nb1-wTaw)1-x}O3 is disclosed. In the formula, M represents a combination of at least one member selected from the group consisting of (Bi0.5K0.5), (Bi0.5Na0.5) and (Bi0.5Li0.5) and at least one member selected from the group consisting of Ba, Sr, Ca and Mg; and in the formula, x, y, z, u, v, w and m are in the following ranges: 0.06<x?0.3, 0?y?1, 0?z?0.3, 0?(y+z)?1, 0?u?1, 0?v?0.75, 0?w?0.2, 0<(u+v)?1 and ?0.06?m?0.06. This solid solution composition is a novel solid solution composition composed mainly of (Na,K)NbO3, which preferably forms the same rhombohedral-tetragonal morphotropic phase boundary as in PZT and is environmentally friendly.

Abstract: The invention relates to a piezochrome composite comprising a matrix of a piezoelectric material with particles of a spin transition compound. The invention also relates to a device that beside said composite also comprises a voltage supply connected to electrodes provided on said matrix. In one embodiment is this device provided with a temperature stabilising device.

Abstract: An ultrafine metal oxide particle dispersion liquid is prepared by mixing an ultrafine titanium-based composite metal oxide particle dispersion liquid prepared by hydrolysis in a microemulsion containing a hydrophobic dispersion medium, water, and a surfactant and an organic metal compound solution for the same titanium-based composite metal oxide at a ratio of 1:1 to 1:30 in terms of the composite metal oxide contained.

Abstract: The present invention is directed to perovskite nanostructures of Formula ABO3, wherein A and B represent one or more metals with A having a valence lower than B, to methods of making the perovskite nanostructures of Formula ABO3 comprising their synthesis within and precipitation from reverse micelles, and the use of the perovskite nanostructures of Formula ABO3 as capacitors, and their use in dynamic random access memory, electromechanics, and non-linear optics.

Abstract: Provided is a piezoelectric material in which the product of the piezoelectric constant and the Young's modulus is large to give excellent piezoelectricity without using lead. A piezoelectric material including a perovskite type crystal represented by a compositional formula of ABO2N wherein A represents a trivalent cation, and B represents a tetravalent cation provided that A and B are each other than lead, wherein when the number of nitrogen N atoms contained in the piezoelectric material is represented by Nxyz and the number of nitrogen atoms each disposed at a face-centered position in the crystal and in a long axis direction of the crystal, out of the nitrogen atoms the number of which is Nxyz, is represented by Nz, an expression of Nz/Nxyz>1/3 is satisfied. It is preferred that A and B are La and Ti, respectively.

Abstract: Provided are an oxynitride piezoelectric material which exhibits ferroelectricity and has good piezoelectric properties and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1): A1-xBix+?1B1-yB?y+?2O3-zNz??(1) where A represents a divalent element, B and B? each represent a tetravalent element, x represents a numerical value of 0.35 or more to 0.6 or less, y represents a numerical value of 0.35 or more to 0.6 or less, z represents a numerical value of 0.35 or more to 0.6 or less, and ?1 and ?2 each represent a numerical value of ?0.2 or more to 0.2 or less, in which the A includes at least one kind selected from Ba, Sr, and Ca and the B and the B? each include at least one kind selected from Ti, Zr, Hf, Si, Ge, and Sn.

Abstract: There are provided a piezoelectric ceramic composition that includes a bismuth layer-structured compound, which contains Na, Bi, Co and Ln (lanthanoide), as a main component and a piezoelectric ceramic composition that includes a compound, which contains Na, Bi, Ti, Co and Ln (lanthanoide) and has a Na0.5Bi4.5Ti4O15 type crystal structure, as a main component, wherein the piezoelectric ceramic composition has an atomic ratio of 0<Ln/(Na+Bi+Ln)?0.04.

Abstract: Piezoelectric compounds of the formula xNamBinTiO3-yKmBinTiO3-zLimBinTiO3-pBaTiO3 where (0<x?1), (0?y?1), (0?z?1), (0.3?m?0.7), (0.3?n?0.7), (0<p?1) (0.9?m/n?1.1) as well as to doped variations thereof are disclosed. The material is suitable for high power applications.

Abstract: A method for forming a nanostructure, a nanostructure and a device using the nanostructure, wherein hydroxide ions are provided to a surface of a nanostructure including a piezoelectric material in order to etch an outer surface of the nanostructure. In an exemplary embodiment, the nanostructure may be etched by contacting the nanostructure with a basic solution. In other exemplary embodiments the etching of the nanostructure may be performed while controlling at least one of the concentration of the basic solution, the temperature of the basic solution and the etching time. The resultant nanostructure includes a piezoelectric material and has an etched outer surface. The nanostructure may be applied to various devices.

Abstract: [Object] To provide piezoelectric/electrostrictive ceramics and a piezoelectric/electrostrictive element with a large electric field-induced strain without performing an aging treatment. [Solving Means] Piezoelectric/electrostrictive ceramics have the composition represented by the general formula: xBNT-yBKT-zBT (x+y+z=1) wherein at least one kind among A-site elements are allowed to become deficient from stoichiometry in which a point (x, y, z) representing content ratios x, y and z of (Bi1/2Na1/2)TiO3, (Bi1/2K1/2)TiO3 and BaTiO3 is within a range (also including a border line) of a quadrangle ABCD with a point A, a point B, a point C and a point D as vertices in a ternary phase diagram. Vacancies are formed in an A-site of a perovskite structure by allowing the A-site elements to become deficient from stoichiometry. An amount of A-site vacancies becomes at least 2 mol % to at most 6 mol %.

Abstract: A process for producing a perovskite oxide having a composition expressed by the compositional formulas A(B, C)O3, and determined so as to satisfy the conditions (1), (2), and (3), 0.98<TF(PX)<1.01, (1) TF(ABO3)>1.0, and (2) TF(ACO3)<1.0, (3) where each of A, B, and C represents one or more metal elements, the main component of one or more A-site elements is bismuth, the composition of one or more B-site element represented by B is different from the composition of one or more B-site element represented by C, TF(PX) is the tolerance factor of the oxide expressed by the compositional formula A(B, C)O3, and TF(ABO3) and TF(ACO3) are respectively the tolerance factors of the oxides expressed by the compositional formulas ABO3 and ACO3.

Abstract: A piezoelectric porcelain composition includes a main ingredient represented by a general formula ((1?x)(K1?a?bNaaLib) (Nb1?cTac)O3?xM2M4O3) (where M2 represents Ca, Ba or Sr, M4 represents Zr, Sn or Hf, and 0.005?x?0.1, 0?a?0.9, 0?b?0.1, 0 5?a+b?0.9, and 0?c?0.3), and Mn is contained in an amount ranging from 2 to 15 mol, relative to 100 mol of the main ingredient, and the M4 is contained in an amount ranging from 0.1 to 5.0 mol, relative to 100 mol of the main ingredient. Preferably, Ni is contained in an amount ranging from 0.1 to 5.0 mol, relative to 100 mol of the main ingredient, and also preferably Yb, In and the like specific rare earth elements is contained. A ceramic layer in a ceramic base is formed of this piezoelectric porcelain composition. As a result, the degree of sintering in a reductive atmosphere is improved, and a piezoelectric porcelain composition allowing co-sintering with Ni, and a piezoelectric ceramic electronic component using the same are realized.

Abstract: Provided is a piezoelectric ceramic 1 containing a compound represented by the following general formula (1), as a main component and at least one element selected from Mn, Fe and Cu in an amount of 0.04 to 0.6% by mass based on the main component, and a vibrator 10 having the piezoelectric ceramic 1 and electrodes 2, 3. CaxBa1-xTiO3??(1) where, x satisfies 0.05?x?0.20.

Abstract: The present invention provides a piezoelectric ceramic and a piezoelectric element, which have a large dynamic d33 (dynamic piezoelectric coefficient d33), can be used even under an elevated temperature of 200° C., and exhibit a small variation between the dynamic d33 at room temperature and the dynamic d33 at 200° C. The piezoelectric ceramic of the present invention is characterized by containing 100 parts by mass of a bismuth layered compound as a main component and a total of 0.05 to 1 part by mass, in terms of oxides (MnO2 and Fe2O3), of at least one of Mn and Fe, the bismuth layered compound being represented by a compositional formula of Bi4Ti3O3O12.?(1-?)M1TiO3.?M2M3O3], wherein ? and ? satisfy the following formulae: 0.405???0.498 and 0???0.3, M1 represents at least one selected from Sr, Ba, Ca, (Bi0.5Na0.5) (Bi0.5Li0.5) and (Bi0.5K0.5), M2 is at least one selected from Bi, Na, K and Li, and M3 is at least one of Fe and Nb.

Abstract: Provided is a lead-containing perovskite-type oxide film having principally (100) and/or (001) orientation and containing lead as a chief component, which is over 2 ?m thick and exhibits such hysteresis characteristics that two coercive fields are both positive. A method of producing such an oxide film, a piezoelectric device including such an oxide film, and a liquid ejecting apparatus provided with such a piezoelectric device are also provided.

Abstract: A piezoelectric film of a perovskite oxide represented by a general expression (P) below and has a pyrochlore free single phase perovskite structure with a/b?1.06. Pba(Zrx,Tiy,Mb-x-y)bOc??(P) (where, M represents one or more types of metal elements, 0<x<b, 0<y<b, 0?b-x-y, and a:b:c=1:1:3 is standard, but the molar ratio may deviate from the standard within a range in which a perovskite structure can be obtained.

Abstract: The present invention includes methods, devices, and compositions having improved piezoelectric characteristics with high energy density. Compositions of the present invention are ceramic materials of the formula: Pb[(Zr0.52Ti0.48)O3]1?x[(Zn1/3Nb2/3)O3]x+Mn, where x is 0.05 to 0.20 and Mn is manganese in a form that is present from about 0.1 to 1.5 wt %. Suitable manganese forms as the starting material include MnCO3, MnO2, MnO, and Mn3O4. The compositions exhibit a high product of piezoelectric voltage constant and piezoelectric stress constant. The compositions are polycrystalline or textured with a dense microstructure and small grain.

Abstract: A piezoelectric material contains a material with the molecular formula P1?c?dDcZd, wherein: 0<c?0.15 and 0?d?0.5, wherein P represents the composition Pb(Zr1?yTiy)O3 and wherein: 0.50?1?y?0.60, wherein Z represents an additional component of the perovskite type of structure, wherein D represents a material according to the general formula [(M1O)1?p(M2O)p]a[Nb2O5]1?a, wherein M1 represents Ba1?tSrt with 0?t?1 and M2 represents strontium or calcium and wherein: ?<a<1 and 0<p<1, wherein the material D contains the cryolite type of structure.

Abstract: Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm?1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm?1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm?1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.

Abstract: A method for manufacturing a PZT-based low-sintering piezoelectric ceramic material, the ions to be added as starting compounds being added as powdered oxides and/or powdered carbonates, mixed together, and then calcined to form the piezoelectric ceramic material. After calcining the starting compounds, lithium in ionic form is added to the mixture in an amount of 0.01 to 0.1 wt. % in relation to the weight of the PZT ceramic.

Abstract: A piezoelectric ceramic composition contains main components represented by a general formula of [(Pb1-x-yCaxSry){Ti1-z(Zn1/2W1/2)z}O3], and x, y, and z satisfy 0?x?0.2 (preferably 0?x?0.15), 0?y?0.2 (preferably 0?y?0.1), 0.1?x+y?0.2, and 0.04?z?0.1. It is also preferable that the piezoelectric ceramic composition contains 0.05 weight part to 1.0 weight part of a Mn component calculated in terms of MnCO3 with respect to 100 weight parts of the main component. A piezoelectric part includes a piezoelectric ceramic element that is formed by the piezoelectric ceramic composition. It is thereby possible to realize a piezoelectric ceramic composition that can be fired at low temperature, that has a high Curie point Tc resistant to a reflow heating treatment on a lead-free solder, and that exhibits satisfactory piezoelectricity, and a piezoelectric part using this piezoelectric ceramic composition.

Abstract: Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). A (ZnxTi1-x))yM(1-y)O3??(1) wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4?x?0.6; and y represents a numerical value satisfying 0.1?y?0.9.

Abstract: There is disclosed a piezoelectric/electrostrictive ceramics which is a sintered body having a structure where a matrix and a filler are brought into a composite, the matrix is made of an alkali niobate-based piezoelectric/electrostrictive material, which includes a large number of grains combined with one another, including a perovskite type oxide, which includes at least one element selected from the group consisting of Li, Na and K as an A site constituent element and Nb as a B site constituent element, as a main crystal phase, the filler is made of a material (with the proviso that an alkali niobate-based material is excluded) having a thermal expansion coefficient smaller than that of the alkali niobate-based piezoelectric/electrostrictive material, and the volume fraction of the filler with respect to the total volume of the matrix and the filler is 0.5 vol % or more and below 10 vol %.