Abstract: An inverter circuit (120) is configured so as to perform synchronous rectification by six switching elements (130). The switching element (130) is formed of an unipolar device (SiC MOSFET in this case) using a wideband gap semiconductor. The inverter circuit (120) uses the body diode (131) of SiC MOSFET (130) as a freewheeling diode during synchronous rectification.

Abstract: A semiconductor device of an embodiment includes: a semiconductor substrate; a field-effect transistor formed on the semiconductor substrate; and a diode forming area which is adjacent to a forming area of the field-effect transistor, wherein the diode forming area is insulated from the forming area of the transistor on the semiconductor substrate, and includes a first diode electrode in which a gate electrode of the field-effect transistor is placed in Schottky barrier junction and/or ohmic contact with the semiconductor substrate through a bus wiring or a pad; and a second diode electrode in which a source electrode of the field-effect transistor is placed in ohmic contact and/or Schottky barrier junction with the semiconductor substrate through a bus interconnection or a pad to form a diode between the gate electrode and the source electrode.

Abstract: Provided is a semiconductor device including a substrate, and a first wiring layer, a second wiring layer, and a switch via formed on the substrate. The first wiring layer has first wiring formed therein and the second wiring layer has second wiring formed therein. The switch via connects the first wiring and the second wiring. The switch via includes at least at its bottom a switch element including a resistance change layer. A resistance value of the resistance change layer changes according to a history of an electric field applied thereto.

Abstract: The invention relates to a semiconductor diode, an electronic component and to a voltage source converter. According to the invention, the semiconductor diode having at least one pn-transition can be switched between a first state and a second state. In comparison to the first state, the second state has a greater on-state resistance and a smaller accumulated charge, and the pn-transition is capable of blocking both in the first state as well as in the second state with at least one predetermined blocking ability. An MOS-controlled diode is hereby obtained in which the transition from the on-state to the blocking state is simplified and is thus not critical with regard to the temporal sequence of the control pulses.

Abstract: A light-emitting device which comprises as one unit a semiconductor light-emitting element; a first liquid for condensing the light from the semiconductor light-emitting element; a second liquid that is separate from but contacts the first liquid; an airtight space in which at least first liquid and second liquid are disposed; and first and second electrodes to which voltage is applied so as to change the shape of the interface between first liquid and second liquid and adjust the condensed state of the light from semiconductor light-emitting element.

Abstract: A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0?x?1; a second compound layer formed on the first compound layer, and including a general formula InyALzGa1-y-zN, where 0?y?1 and 0<z?1; and a gate electrode formed on the second compound layer. The gate electrode is electrically connected to a resistance element formed on a first interlayer insulating film that covers the gate electrode, through a metal wiring formed on a second interlayer insulating film that covers the first interlayer insulating film.

Abstract: A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1×1017 to 3×1018 dopant atoms per cm3 for the anode emitter, especially on its surface 1019 dopant atoms per cm3 or more for the cathode emitter and approximately 1016 dopant atoms per cm3 for the blocking function of an anode-side zone.

Abstract: The present invention relates to a reverse conducting thyristor device. It aims at preventing heat generated by power loss from filling end field protective rubber and at simplifying a sheath storing a semiconductor substrate. In a reverse conducting thyristor device according to this invention, a self-extinguishing thyristor region is arranged on an inner region of the semiconductor substrate, a reverse conducting diode region whose outer periphery is completely enclosed with an isolation region is arranged on its outer region by at least one, and an external takeout gate electrode region is further arranged on the outermost peripheral region of the semiconductor substrate on the outer part thereof. Thus, a gate electrode provided on a surface of a gate part layer of the self-extinguishing thyristor region is connected with an external takeout gate electrode formed along the outermost periphery of the substrate through a gate wiring pattern formed on a surface of a connecting region.

Abstract: An amplifying-gate thyristor having an increased integrated circuit includes a main thyristor and an amplifying thyristor. The amplifying thyristor is of the gate turnoff-type. The main thyristor and the amplifying thyristor are such that the amplifying thyristor remains in the conductive state while the main thyristor is conductive. A control circuit turns off the amplifying thyristor when the current through the main thyristor is approximately its hold current.

Abstract: A dipole component with a controlled breakover sensitivity includes a main thyristor having its gate connected to its anode through a pilot thyristor, and a triggering transistor disposed in parallel with the pilot thyristor, the base of the triggering transistor being connected to the gate of the pilot thyristor.

Abstract: In a diode, the backward length L of an anode electrode in a region, where a semiconductor layer of a p.sup.+ conductivity type and an anode electrode do not contact each other, is made longer than the diffusion length of holes in a semiconductor layer of an n.sup.- conductivity type for obtaining a large critical di/dt.

Abstract: An AC power controller includes at least two semiconductor regions reverse-connected in series. Each semiconductor region has an electron donor (source), an electron sink (drain) and an electron flow control electrode (gate) with characteristic curves such as those exhibited by FETs. Each semiconductor region also has an internal body diode. The gate-source voltage of a respective semiconductor region in the forward direction is set to be large enough to establish a desired limiting of the drain-source current. Yet, the gate-source voltage of the semiconductor region in the inverse mode is set to be large enough for the body diode to remain de-energized.

Abstract: A control circuit for turning off or on direct current flowing through an inductive load (12) to ground uses a semiconductor switch (11), for example a MOSFET, having a first input terminal (D), a control terminal (G), and a second output terminal (S) to the load. A semiconductor freewheel diode (16) is coupled between the switch second terminal and ground, in parallel with the load. The freewheel diode has a current-conducting state and a current non-conducting state. A switching-off current source (19) is coupled between the second terminal and the control terminal; it reduces the magnitude of the switching control current (.+-.I.sub.GS) flowing into the control terminal of the MOSFET, as a function of voltage at the second terminal of the switch and the input to the freewheel diode. A minimum value (.+-.II.sub.GSmin) of the switching control current is reached when the voltage at the second terminal of the switch reaches ground potential.

Abstract: A semiconductor device is disclosed having a thyristor region coupled to a semiconductor switching device and a semiconductor rectifier. During turn-off operation, holes are drained from the p-type base region of the thyristor region through the semiconductor rectifier and to the cathode of the thyristor. During turn-on, electrons are supplied to an n-type emitter region of the thyristor from the cathode electrode through the semiconductor switching device.

Abstract: An amplifying-gate thyristor having an increased integrated circuit includes a main thyristor and an amplifying thyristor. The amplifying thyristor is of the gate turnoff-type. The main tbyristor and the amplifying thyristor are such that the amplifying thyristor remains in the conductive state while the main thyristor is conductive. A control circuit turns off the amplifying thyristor when the current through the main thyristor is approximately its hold current.

Abstract: The invention concerns a field-effect controlled semiconductor component with at least four regions of alternating opposite performance types: an anode-side emitter region, a first and a second base region connected to the emitter region, and a cathode-side emitter region; the cathode-side emitter region and the first base region from the source and drain of an MOS field effect transistor. The component also comprises an anode contact, a contact at the cathode-side emitter region and a control electrode contact of the MOS field effect transistor. The invention lies in the fact that a p+ region (36) which is adjacent to the cathode-side base region, separate, and accomodated in the anode-side n- base region (20), is connected via a separate component as a coupling element (80) with non-linear current/voltage characteristics to the cathode contact, the said region (36) being directly surrounded by the anode-side base region (20).

Abstract: A voltage-controlled power monolithic bidirectional switch has two main terminals and includes a control electrode whose voltage is referenced to one of the main terminals. The switch includes a lateral P-channel MOS transistor; a vertical N-channel MOS transistor, the source well of the vertical N-channel MOS transistor also constituting the source of the lateral transistor; a lateral thyristor whose first three regions correspond to the source, drain and channel of the lateral MOS transistor; a first vertical thyristor disposed in parallel with the lateral thyristor; and a second vertical thyristor having a polarity opposite to the first polarity and disposed in parallel with the vertical MOS transistor.

Abstract: An electrostatic discharge (ESD) protection circuit for an integrated circuit formed of a plurality of individual circuit cells which are connected to form the desired circuit. A pair of buss lines, preferably in closely spaced relation, extend about the circuit formed by the circuit cells. A plurality of ESD protection circuits are electrically connected between the buss lines in a spaced apart relationship, preferably in a closed in a close relationship to the electrical connections of the circuit cells to be protected.

Abstract: A semiconductor device comprises a semiconductor substrate of a first conductive type with a low impurity density; a first region of a second conductive type; a second region of the first conductive type with a high impurity density formed in a surface of the first region; a third region of the second conductive type with a high impurity density; a gate insulating film formed on the surface of the first region intervening between an exposed surface of the semiconductor substrate and the second region; a gate electrode formed on the gate insulating film; a fourth region of the second conductive type opposite to the first region on the other surface of the semiconductor substrate; a fifth region of the first conductive type with a high impurity density which is opposite to the third region and adjacent to the fourth region; a first electrode commonly brought into contact with the first and second regions; a second electrode brought into contact with the second region and connected to the first electrode; and a