Abstract: A RRAM device is provided. The RRAM device includes: a bottom electrode in a first dielectric layer; a switching layer in a second dielectric layer over the first dielectric layer, wherein a conductive path is formed in the switching layer when a forming voltage is applied; and a needle-like-shaped top electrode region in a third dielectric layer over the second dielectric layer. The needle-like-shaped top electrode region includes: an oxygen-rich dielectric layer, wherein a lower end of the oxygen-rich dielectric layer is a tip; and a top electrode over the oxygen-rich dielectric layer.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a bottom electrode over a substrate. A data storage structure is formed on the bottom electrode. The data storage structure comprises a first dopant with a first atomic percent and a second dopant with a second atomic percent. The first atomic percent is different from the second atomic percent. A top electrode is formed on the data storage structure.

Abstract: A memory device includes a first interconnect layer, a second interconnect layer, a phase-change layer, and an adjacent layer. The phase-change layer is disposed between the first interconnect layer and the second interconnect layer and configured to reversibly transition between a crystalline state and an amorphous state. The adjacent layer contacts the phase-change layer and comprises tellurium and at least one of titanium, zirconium, or hafnium.

Abstract: Circuits and methods that provide wider bandwidth and smaller IM inductances for phase change material (PCM) based RF switch networks. The present invention recognizes that it is beneficial to consider the total high parasitic capacitance to ground of the various PCM switches in an RF switch network as constituting two or more separate capacitive contributions. This leads to several “split capacitance” concepts, including signal-path splitting, switch-block splitting, stacked-switch splitting, and splitting parasitic capacitances due to layout discontinuities, in which compensating impedance matching inductances are inserted between additive capacitances.

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a first memory cell and a second memory cell over a substrate, wherein each of the first and second memory cells comprises a bottom electrode, a resistance switching element over the bottom electrode, and a top electrode over the resistance switching element; depositing a first dielectric layer over the first and second memory cells, such that the first dielectric layer has a void between the first and second memory cells; depositing a second dielectric layer over the first dielectric layer; and forming a first conductive feature and a second conductive feature in the first and second dielectric layers and respectively connected with the top electrode of the first memory cell and the top electrode of the second memory cell.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a source/drain (S/D) contact structure adjacent to the gate structure, a layer of dielectric material over the S/D contact structure, a conductor layer over and in contact with the layer of dielectric material and above the S/D contact structure, and an interconnect structure over and in contact with the conductor layer.

Abstract: A resistive random access memory includes a first dielectric layer, a bottom electrode on the first dielectric layer, a variable-resistance layer on the bottom electrode and having a U-shaped cross-sectional profile, a top electrode on the variable-resistance layer and filling a recess in the variable-resistance layer, a second dielectric layer on the first dielectric layer and around the variable-resistance layer and the bottom electrode, and a spacer on the bottom electrode and inserting between the variable-resistance layer and the second dielectric layer.

Abstract: Memory devices and methods of manufacturing such devices are provided herein. In at least one embodiment, a memory device includes a plurality of phase-change memory cells. An electrically-insulating layer covers lateral walls of each of the phase-change memory cells, and a thermally-insulating material is disposed on the electrically-insulating layer and covers the lateral walls of the phase-change memory cells.

Abstract: Provided are a symmetric memory cell and a BNN circuit. The symmetric memory cell includes a first complementary structure and a second complementary structure, the second complementary structure being symmetrically connected to the first complementary structure in a first direction, wherein the first complementary structure includes a first control transistor configured to be connected to the second complementary structure, the second complementary structure includes a second control transistor, a drain electrode of the second control transistor and a drain electrode of the first control transistor being symmetrically arranged in the first direction and connected to a bit line, and the symmetric memory cell is configured to store a weight value 1 or 0.

Abstract: A memory device and method of making the same is provided. The memory device includes a first electrode, an oxygen scavenging layer on the first electrode, a hard mask on the oxygen scavenging layer, and a second electrode on the hard mask. A switching layer is arranged on a portion of the oxygen scavenging layer, and the switching layer is conformal to a side surface of the hard mask.

Abstract: A method of fabricating a semiconductor device includes the following steps. A plurality of doped regions are formed in a substrate. A first dielectric layer is formed on the substrate. A plurality of first contacts and second contacts are formed in the first dielectric layer to be connected to the plurality of doped regions. A memory element is formed on the first dielectric layer. The memory element is electrically connected to the second contact. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer surrounds the memory element. A conductive line is formed in the second dielectric layer. A top surface of the conductive line is at a same level as a top surface of the memory element, and the conductive line is electrically connected to the plurality of first contacts.

Abstract: A method to control a memory cell in a memory device, where the memory cell includes a switch, a memory element, and a negative resistance device coupled in series, the method includes: determine whether the memory cell is in a read operation or not; during the read operation in the memory cell, apply a read voltage greater than a predetermined threshold voltage of the negative resistance device for making the negative resistance device entering into a negative resistance state. A memory device that includes a memory cell array is also provided.

Abstract: Exemplary semiconductor structures for neuromorphic applications may include a first layer overlying a substrate material. The first layer may be or include a first oxide material. The structures may include a second layer disposed adjacent the first layer. The second layer may be or include a second oxide material. The structures may also include an electrode material deposited overlying the second layer.

Abstract: Memory devices and methods of forming the same are provided. A memory device includes a substrate, a first conductive layer, a phase change layer, a selector layer and a second conductive layer. The first conductive layer is disposed over the substrate. The phase change layer is disposed over the first conductive layer. The selector layer is disposed between the phase change layer and the first conductive layer. The second conductive layer is disposed over the phase change layer. In some embodiments, at least one of the phase change layer and the selector layer has a narrow-middle profile.

Abstract: A method for forming a semiconductor memory structure include forming a pillar structure. The pillar structure includes a first conductive layer, a second conductive layer and a data storage material layer between the first and second conducive layers. A sidewall of the first conductive layer, a sidewall of the data storage layer and a sidewall of the second conductive layer are exposed. An oxygen-containing plasma treatment is performed on the pillar structure to form hydrophilic surfaces of the sidewall of the first conductive layer, the sidewall of the data storage layer and the sidewall of the second conductive layer. An encapsulation layer is formed over the pillar structure and the dielectric layer. The encapsulation layer is in contact with the hydrophilic surfaces of the sidewall of the first conductive layer, the sidewall of the data storage layer and the sidewall of the second conductive layer.

Abstract: Various embodiments of the present application are directed a memory layout for reduced line loading. In some embodiments, a memory device comprises an array of bit cells, a first conductive line, a second conductive line, and a plurality of conductive bridges. The first and second conductive lines may, for example, be source lines or some other conductive lines. The array of bit cells comprises a plurality of rows and a plurality of columns, and the plurality of columns comprise a first column and a second column. The first conductive line extends along the first column and is electrically coupled to bit cells in the first column. The second conductive line extends along the second column and is electrically coupled to bit cells in the second column. The conductive bridges extend from the first conductive line to the second conductive line and electrically couple the first and second conductive lines together.

Abstract: Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, an etching stop layer, a variable resistance layer, and a top electrode. The etching stop layer is disposed on the bottom electrode. The variable resistance layer is embedded in the etching stop layer and in contact with the bottom electrode. The top electrode is disposed on the variable resistance layer. A semiconductor device having the memory cell is also provided.

Abstract: Some embodiments include an arrangement having a memory tier with memory cells on opposing sides of a coupling region. First sense/access lines are under the memory cells, and are electrically connected with the memory cells. A conductive interconnect is within the coupling region. A second sense/access line extends across the memory cells, and across the conductive interconnect. The second sense/access line has a first region having a second conductive material over a first conductive material, and has a second region having only the second conductive material. The first region is over the memory cells, and is electrically connected with the memory cells. The second region is over the conductive interconnect and is electrically coupled with the conductive interconnect. An additional tier is under the memory tier, and includes CMOS circuitry coupled with the conductive interconnect. Some embodiments include methods of forming multitier arrangements.

Abstract: Provided are a memory device and a method of forming the same. The memory device includes a substrate, a layer stack, and a plurality of composite pillar structures. The layer stack is disposed on the substrate. The layer stack includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately. The composite pillar structures respectively penetrate through the layer stack. Each composite pillar structure includes a dielectric pillar; a pair of conductive pillars penetrating through the dielectric pillar and electrically isolated from each other through a portion of the dielectric pillar; a channel layer covering both sides of the dielectric pillar and the pair of conductive pillars; a ferroelectric layer disposed between the channel layer and the layer stack; and a buffer layer disposed between the channel layer and the ferroelectric layer.

Abstract: A switching element that has reduced switching voltage and leakage current and that demonstrates high reliability and low power consumption is achieved as a result of comprising: a first insulation layer in which first wiring mainly consisting of copper is embedded in a first wiring groove that opens upward; a second insulation layer which is formed on an upper surface of the first insulation layer and the first wiring and has an opening that reaches the first insulation layer and the first wiring; a first electrode which is the portion of the first wiring that is exposed from the opening; an oxygen supply layer which is formed on an upper surface of the second insulation layer, generates oxygen plasma during etching to form the opening in the second insulation layer, and remains at least in the vicinity of the opening of the upper surface of the second insulation layer; an ion conducting layer which is formed on the upper surface of the first insulation layer and the first electrode that are exposed from the

Abstract: The present application provides an apparatus, including: a substrate; a first line electrode formed on the substrate; an interlayer formed on the first line electrode, a selector stack formed on the interlayer and the first line electrode; an RRAM stack formed on the selector stack; and a second line electrode formed on the RRAM stack. The interlayer comprises an upper surface and a sidewall. In some embodiments, a shape of the interlayer comprises a cylinder, a pyramid, a prism, a cone, a pillar, or a protrusion.

Abstract: A method of fabricating a resistive random access memory cell includes the following steps. A second sacrificial layer is formed around a patterned stacked layer. An opening passing through first conductive layers and first sacrificial layers of the patterned stacked layer is formed. A second conductive layer is formed in the opening, and the second conductive layer and the first conductive layers form a first electrode layer. The first sacrificial layers and the second sacrificial layer are removed. A variable resistance layer and an oxygen reservoir layer are formed. The oxygen reservoir layer is patterned to form a patterned oxygen reservoir layer and expose the variable resistance layer. A second dielectric layer is formed on the variable resistance layer and the patterned oxygen reservoir layer. A second electrode is formed in the second dielectric layer.

Abstract: A semiconductor device includes a semiconductor substrate and an interconnection structure. The interconnection structure is disposed over the semiconductor substrate. The interconnection structure includes first conductive lines, second conductive lines, and ovonic threshold switches. The first conductive lines extend parallel to each other in a first direction. The second conductive lines are stacked over the first conductive lines and extend parallel to each other in a second direction perpendicular to the first direction. The ovonic threshold switches are disposed between the first conductive lines and the second conductive lines. The ovonic threshold switches include a ternary GeCTe material. The ternary GeCTe material consists substantially of carbon, germanium, and tellurium. In the ternary GeCTe material, a content of carbon is in a range from 10 to 30 atomic percent and a content of germanium is in a range from 10 to 65 atomic percent.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes word lines, channel layer, gate dielectric layers, a conductive pillar and a storage pillar. The word lines extend along a first direction over a substrate, and are vertically spaced apart from one another. The channel layers respectively line along a sidewall of one of the word lines. The gate dielectric layers respectively line between one of the word lines and one of the channel layers. The conductive pillar and the storage pillar penetrate through the channel layers. The storage pillar includes an inner electrode, a switching layer and an outer electrode. The switching layer wraps around the inner electrode. The outer electrode laterally surrounds the switching layer, and includes annulus portions vertically spaced apart from one another and each in lateral contact with a corresponding one of the channel layers.

Abstract: Methods, systems, and devices for self-selecting memory with horizontal access lines are described. A memory array may include first and second access lines extending in different directions. For example, a first access line may extend in a first direction, and a second access line may extend in a second direction. At each intersection, a plurality of memory cells may exist, and each plurality of memory cells may be in contact with a self-selecting material. Further, a dielectric material may be positioned between a first plurality of memory cells and a second plurality of memory cells in at least one direction. each cell group (e.g., a first and second plurality of memory cells) may be in contact with one of the first access lines and second access lines, respectively.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetoresistance effect element provided above a substrate, a first switching element member, and a first conductor. Each of the first switching element member and the first conductor is provided above the first magnetoresistance effect element. The first switching element member includes a first portion in contact with a lower surface of the first conductor directly above the first magnetoresistance effect element. An area of a lower surface of the first switching element member is smaller than a cross-sectional area of the first switching element member along the lower surface of the first conductor.

Abstract: A semiconductor apparatus includes a nonvolatile memory cell array including a plurality of first memory cells and a plurality of second memory cells including a first memory element 11 and a second memory element 12 including a resistance-variable nonvolatile memory element and a first selection transistor electrically connected to the first memory element 11 and the second memory element 12, in which a plurality of first memory elements 11 and a plurality of second memory elements 12 are arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction and on the same interlayer insulating layer, the first memory element 11 is larger than the second memory element 12, and the first memory element 11 and the second memory element 12 are disposed adjacent to each other along the second direction.

Abstract: A semiconductor storage device includes a semiconductor substrate and a conductive layer separated from the semiconductor substrate in a first direction. The conductive layer extends in a second direction parallel to the semiconductor substrate. A semiconductor layer extends in the first direction through the conductive layer. A first contact extends in the first direction and is connected to a surface of the conductive layer facing away from the semiconductor substrate. A first insulating layer extends in the first direction, and a second insulating layer extends along the first insulating layer in the first direction. Each of the first and second insulating layers entirely overlaps with the first contact when viewed in the first direction.

Abstract: A vertical memory device includes a gate electrode structure formed on a substrate including a cell array region and a pad region, a channel, contact plugs, and support structures. The gate electrode structure includes gate electrodes extending in a second direction and stacked in a staircase shape in a first direction on the pad region. The channel extends through the gate electrode structure on the cell array region. The contact plugs contact corresponding ones of steps, respectively, of the gate electrode structure. The support structures extend through the corresponding ones of the steps, respectively, and extend in the first direction on the pad region. The support structure includes a filling pattern and an etch stop pattern covering a sidewall and a bottom surface thereof. An upper surface of each of the support structures is higher than that of the channel.

Abstract: An integrated circuit device has an RRAM cell that includes a top electrode, an RRAM dielectric layer, and a bottom electrode having a surface that interfaces with the RRAM dielectric layer. Oxides of the bottom electrode are substantially absent from the bottom electrode surface. The bottom electrode has a higher density in a zone adjacent the surface as compared to a bulk region of the bottom electrode. The surface has a roughness Ra of 2 nm or less. A process for forming the surface includes chemical mechanical polishing followed by hydrofluoric acid etching followed by argon ion bombardment. An array of RRAM cells formed by this process is superior in terms of narrow distribution and high separation between low and high resistance states.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a peripheral circuit. The second semiconductor structure includes an array of memory cells, a plurality of bit lines coupled to the memory cells and each extending in a second direction perpendicular to the first direction, and a plurality of word lines coupled to the memory cells and each extending in a third direction perpendicular to the first direction and the second direction. Each of the memory cells includes a vertical transistor extending in a first direction, and a storage unit coupled to the vertical transistor.

Abstract: According to one embodiment, a memory device includes a first electrode, a second electrode, and a resistive layer provided between the first electrode and the second electrode, containing at least one of antimony (Sb) and bismuth (Bi) as a first element, and tellurium (Te) as a second element, and having a variable resistance value. The resistive layer includes a first layer having a hexagonal crystal structure containing the first element and the second element. The first layer contains a group 14 element as a third element.

Abstract: Techniques for using native and/or previously programmed resistive switching devices as one time programmable memory are discussed. On example method comprises allocating a set of resistive switching devices to be one time programmable memory; determining data to be stored in the set of resistive switching devices; for each resistive switching device of the set of resistive switching devices, assigning one of a first digital value or a second digital value to that resistive switching device, based on the data; and for each resistive switching device assigned the first digital value, permanently programming that resistive switching device via reverse formation.

Abstract: There is provided a semiconductor device including a channel portion, and a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion, in which the gate insulating film incudes a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion.

Abstract: A semiconductor memory device includes a plurality of semiconductor patterns extending in a first horizontal direction and separated from each other in a second horizontal direction and a vertical direction, each semiconductor pattern including a first source/drain area, a channel area, and a second source/drain area arranged in the first horizontal direction; a plurality of gate insulating layers covering upper surfaces or side surfaces of the channel areas; a plurality of word lines on the upper surfaces or the side surfaces of the channel areas; and a plurality of resistive switch units respectively connected to first sidewalls of the semiconductor patterns, extending in the first horizontal direction, and separated from each other in the second horizontal direction and the vertical direction, each resistive switch unit including a first electrode, a second electrode, and a resistive switch material layer between the first and second electrodes and including carbon nanotubes.

Abstract: A RRAM (resistive random-access memory) device includes a bottom electrode line, a top electrode island and a resistive material. The bottom electrode line is directly on a first metal structure. The top electrode island is disposed beside the bottom electrode line. The resistive material is sandwiched by a sidewall of the bottom electrode line and a sidewall of the top electrode island. The present invention also provides a method of forming said RRAM device.

Abstract: Resistive random access memory (RRAM) cells, for example conductive bridging random access memory (CBRAM) cells and oxygen vacancy-based RRAM (OxRRAM) cells are provided. An RRAM cell may include a metal-insulator-metal (MIM) structure formed between adjacent metal interconnect layers or between a silicided active layer (e.g., including MOSFET devices) and a first metal interconnect layer. The MIM structure of the RRAM cell may be formed by a damascene process including forming a tub opening in a dielectric region, forming a cup-shaped bottom electrode in the tub opening, forming a cup-shaped insulator in an interior opening defined by the cup-shaped bottom electrode, and forming a top electrode in an interior opening defined by the cup-shaped insulator. The cup-shaped bottom electrode, or a component thereof (in the case of a multi-layer bottom electrode) may be formed concurrent with interconnect vias, e.g., by deposition of tungsten or other conformal metal.

Abstract: A memory cell includes a bottom electrode, a storage element layer, a first buffer layer, and a top electrode. The storage element layer is disposed over the bottom electrode. The first buffer layer is interposed between the storage element layer and the bottom electrode, where a thermal conductivity of the first buffer layer is less than a thermal conductivity of the storage element layer. The top electrode is disposed over the storage element layer, where the storage element layer is disposed between the top electrode and the first buffer layer.

Abstract: A device may include a first electrode, a barrier layer, and a tunneling layer having a first dielectric constant. The barrier layer may be between the first electrode and the tunneling layer. The device may also include an active layer having a second dielectric constant. The tunneling layer may be between the first electrode and the active layer. The device may further include a second electrode. The active layer may be between the tunneling layer and the second electrode.

Abstract: Provided is an organic light-emitting material having an ancillary ligand with partially fluorinated substituents. The organic light-emitting material is a metal complex having a diketone ancillary ligand with partially fluorinated substituents and may be used as a light-emitting material in an organic electroluminescent device. These new types of metal complex can fine-tune the emission wavelength more effectively, reduce voltage, improve efficiency, prolong lifetimes, and provide better device performance. Further provided are an organic electroluminescent device and a compound formulation.

Abstract: A semiconductor device includes a bottom electrode, a top electrode over the bottom electrode, a switching layer between the bottom electrode and the top electrode, wherein the switching layer is configured to store data, a capping layer in contact with the switching layer, wherein the capping layer is configured to extract active metal ions from the switching layer, an ion reservoir region formed in the capping layer, a diffusion barrier layer between the bottom electrode and the switching layer, wherein the diffusion barrier layer includes palladium (Pd), cobalt (Co), or a combination thereof and is configured to obstruct diffusion of the active metal ions between the switching layer and the bottom electrode, and the diffusion layer has a concaved top surface, and a passivation layer covering a portion of the top electrode, and wherein the passivation layer directly contacts a top surface of the switching layer.

Abstract: Methods, systems, and devices related to a memory device with a thermal barrier are described. The thermal barrier (e.g., a low density thermal barrier) may be positioned between an access line (e.g., a digit line or a word line) and a cell component. The thermal barrier may be formed on the surface of a barrier material by applying a plasma treatment to the barrier material. The thermal barrier may have a lower density than the barrier material and may be configured to thermally insulate the cell component from thermal energy generated in the memory device, among other benefits.

Abstract: A phase change memory bridge cell comprising a dielectric layer located on top of a at least one electrode, wherein a trench is located in the dielectric layer. A first liner located at the bottom of the trench in the dielectric layer and the first liner is located on the sidewalls of the dielectric layer that forms the sidewalls of the trench. A phase change memory material located on top of the first liner, wherein a top surface of the phase change memory material is aligned with a top surface of the dielectric layer, wherein the dielectric layer is located adjacent to and surrounding the vertical sidewalls of the phase change memory material, wherein a top surface of the phase change memory material is flush with a top surface of the dielectric layer.

Abstract: A memory device according to an embodiment includes a first interconnect, a second interconnect, a first variable resistance member, a third interconnect, a second variable resistance member, a fourth interconnect, a fifth interconnect and a third variable resistance member. The first interconnect, the third interconnect and the fourth interconnect extend in a first direction. The second interconnect and the fifth interconnect extend in a second direction crossing the first direction. The first variable resistance member is connected between the first interconnect and the second interconnect. The second variable resistance member is connected between the second interconnect and the third interconnect. The third variable resistance member is connected between the fourth interconnect and the fifth interconnect. The fourth interconnect is insulated from the third interconnect.

Abstract: A certain embodiment includes: first wiring layers extended in a first direction and arranged in a second direction; second wiring layers provided above the first wiring layer of a third direction and arranged in the first direction and extended in the second direction; first stacked structures comprising a first memory cell disposed between the second and first wiring layers at a crossing portion between the second and first wiring layers; first conductive layers provided in the same layer as the first wiring layers, adjacent to the first wiring layer in the second direction, and not connected to other than the second wiring layer; second stacked structures disposed at crossing portions between the second wiring layers and the first conductive layers; and an insulation layer provided between the first stacked structures and between the second stacked structures having a Young's modulus larger than that of the insulation layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode disposed over one or more interconnects and a diffusion barrier layer on the bottom electrode. The diffusion barrier layer has an inner upper surface that is arranged laterally between and vertically below an outer upper surface of the diffusion barrier film. The outer upper surface wraps around the inner upper surface in a top-view of the diffusion barrier layer. A data storage structure is separated from the bottom electrode by the diffusion barrier layer. A top electrode is arranged over the data storage structure.

Abstract: A memory includes: a dielectric fin formed over a substrate; and a pair of memory cells disposed along respective sidewalls of the dielectric fin, each of the pair of memory cells comprising: a first conductor layer; a selector layer; a resistive material layer; and a second conductor layer, wherein the first conductor layer, selector layer, resistive material layer, and second conductor layer each includes upper and lower boundaries, and at least one of the upper and lower boundaries is tilted away from one of the sidewalls of the dielectric fin by an angle.

Abstract: A semiconductor device includes a bottom electrode contact disposed over one or more of a plurality of conductive lines, magnetoresistive random access memory (MRAM) pillars constructed over the bottom electrode contact, an encapsulation layer section disposed between a pair of the MRAM pillars such that an aspect ratio of a tight pitch gap between the pair of the MRAM pillars is reduced, and a dielectric disposed within the encapsulation layer section, wherein the dielectric fills an entirety of a space defined within the encapsulation layer section. The MRAM pillars have a generally rectangular-shaped or cone-shaped configuration and the encapsulation layer section has a generally U-shaped or V-shaped configuration.

Abstract: A three-dimensional semiconductor memory device may include a first conductive line extending in a first direction, a second conductive line extending in a second direction crossing the first direction, a cell stack at an intersection of the first and second conductive lines, and a gapfill insulating pattern covering a side surface of the cell stack. The cell stack may include first, second, and third electrodes sequentially stacked, a switching pattern between the first and second electrodes, and a variable resistance pattern between the second and third electrodes. A top surface of the gapfill insulating pattern may be located between top and bottom surfaces of the third electrode.

Abstract: A phase-change memory device and method of manufacturing the same, the memory device including: a substrate; a bottom electrode disposed over the substrate; a top electrode disposed over the bottom electrode; and a phase-change layer disposed between the top and bottom electrodes. The phase change layer includes a chalcogenide Ge—Sb—Te (GST) material that includes at least 30 at % Ge and that is doped with a dopant including N, Si, Sc, Ga, C, or any combination thereof.