Abstract: A display device includes a substrate including a display area in which a display element is arranged and a non-display area having a pad area outside the display area, a first thin-film transistor arranged in the display area of the substrate and including a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, a first voltage line which extends in a first direction on the first gate electrode, a data line apart from the first voltage line and which extends in the first direction, connection lines which connects the data line to a pad in the pad area in the display area, and a conductive layer arranged in a layer between the first voltage line and the data line.

Abstract: In an example, a multiplexer is provided. The multiplexer may include one or more first strings controlling access to source-lines of the memory, wherein a first string of the one or more first strings includes a first set of two high voltage transistors and a first plurality of low voltage transistors. The multiplexer may include one or more second strings controlling access to bit-lines of the memory, wherein a second string of the one or more second strings includes a second set of two high voltage transistors and a second plurality of low voltage transistors. A method for operating such multiplexer is provided.

Abstract: A method is provided. A bottom tier package structure is bonded to a support substrate through a first bonding structure, wherein the bottom tier package structure includes a first semiconductor die encapsulated by a first insulating encapsulation, and the first bonding structure includes stacked first dielectric layers and at least one stacked first conductive features penetrating through the stacked first dielectric layers. The support substrate is placed on a grounded stage such that the first semiconductor die is grounded through the at least one first stacked conductive features, the support substrate and the grounded stage. A second semiconductor die is bonded to the bottom tier package structure through a second bonding structure, wherein the second bonding structure includes stacked second dielectric layers and at least one stacked second conductive features penetrating through the stacked second dielectric layers. The second semiconductor die is encapsulated with a second insulating encapsulation.

Abstract: A testing probe system includes probes configured to contact shared probe pads of multi-channel die of a wafer; and a controller configured to generate testing patterns and receive signals from the multi-channel die of the wafer. The controller is configured to contact a probe of the probes with a shared probe pad of the multi-channel die, select a first channel of the multi-channel die to test, select at least one test mode for testing the first channel, stimulate at least the first channel during a single contact period, acquiring a first output of the first channel during the single contact period, select a second channel of the multi-channel die to test, select at least one test mode for testing the second channel, stimulate at least the second channel during the single contact period, and acquire a second output of the first channel during the single contact period.

Abstract: A first metal layer, an inorganic insulating film, and a second metal layer are provided. A first wiring line led to a peripheral edge of a cutout portion is provided in the first metal layer. A second wiring line led to the peripheral edge of the cutout portion is provided in the second metal layer. The first lead wiring line and the second lead wiring line overlap each other through intermediation of the inorganic insulating film.

Abstract: An AI-based rule generation system generates an ontology from user-provided information and further enables generating rules that govern processes via drag-and-drop operations by automatically generating code in the backend. The rule generation system after generating the ontology, provides access to the entities of the ontology via a drag-and-drop GUI which also includes operators required to generate the rules. The user can drag-and-drop the entity elements and the operator elements as needed onto a whitespace in addition to providing the requisite values in order to generate a rule flow. The rule flow is validated and published to an execution server for use by downstream processes. The rule generation system further includes custom functions in addition to enabling distributed knowledge base processes for generating the rules.

Abstract: A display device includes a substrate; and a driving pad disposed on the substrate, wherein the driving pad includes a first pad portion and a second pad portion alternately arranged along a direction, wherein each of the first pad portion and the second pad portion includes first data pads and signal pads, wherein the first data pads of the first and second pad portions include a first side and a second side different from the first side, wherein the signal pads of the first pad portion are disposed on the first side of the first data pads of the first pad portion, and the signal pads of the second pad portion are disposed on the second side of the first data pads of the second pad portion, and wherein the first data pads provide a data signal to pixels, and the signal pads provide a driving voltage to the pixels.

Abstract: A semiconductor device may include function circuits and a test line structure beside the function circuits. The test line structure includes standard cell circuit blocks including a first components and environment circuit regions between the standard cell circuit blocks. The environment circuit regions include second components. The first components are different from the second components in structure, arrangement or a combination thereof.

Abstract: Detecting voltage-based attacks on an integrated circuit (IC) is difficult in the presence of clock jitter. Propagating signals can exhibit a total delay that is due to a delay component resulting from a voltage-based attack and a delay characteristic resulting from clock fluctuation. Voltage-variation detection circuitry includes first and second voltage-dependent circuits and a voltage analysis circuit. The voltage-dependent circuits produce first and second signals that are indicative of a voltage level responsive to a clock signal and based on different first and second voltage sensitivities. The voltage analysis circuit generates a voltage alert signal based on the first and second signals. A combined signal neutralizes the delay characteristic in the first and second signals, but the delay component due to the voltage variation can be at least partially maintained. Thus, a voltage-based attack is detectable in the presence of clock fluctuation by using two voltage-dependent circuits.

Abstract: Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer, an unevenness-absorptive resin layer, and an adhesive resin layer in this order and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component such that the circuit forming surface is protected; and a step of forming an electromagnetic wave-shielding layer on the electronic component in a state of being attached to the adhesive laminated film.

Abstract: Present disclosure provides a semiconductor stress monitoring structure, including a substrate, first conductive segments, second conductive segments, and a sensing structure. The first conductive segments are over the substrate and arranged parallel to each other. The second conductive segments are arranged below the first conductive segments and parallel to each other. The sensing structure is proximate to the substrate. The sensing structure is configured to respond to a stress caused by the first conductive segments and the second conductive segments and generate a monitoring signal.

Abstract: Test pad structures and methods of forming a test pad are described herein. A method for forming a test pad includes forming a device element over a substrate, depositing a dielectric layer over the device element and the substrate, and etching openings in the dielectric layer to a first depth. Once the openings have been formed, a conductive material is deposited in the openings and followed by a chemical mechanical planarization to form a first grid feature and a panel region of the test pad, the first grid feature extending lengthwise from the panel region to a perimeter of the test pad. Once formed, a probe may be used to contact the panel region of the test pad during a wafer acceptance test (WAT) and/or a process control monitoring (PCM) test of the device element.

Abstract: A semiconductor device includes a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip and electrically connected to the first semiconductor chip by a first through electrode and a second through electrode. The first semiconductor chip may electrically connect the first through electrode to a third test resistor during a second test operation. The first semiconductor chip may detect a voltage level of the first internal node, which is determined by resistance values of the third test resistor and the first and second through electrodes, to test a short failure between the first and second through electrodes during the second test operation.

Abstract: Provided is an integrated fan-out (InFO) package structure including a first die, a second die, a third die, a protective layer, and an interconnect structure. The first die has a first surface and a second surface opposite to each other. The first die has a plurality of through substrate vias (TSVs) protruding from the second surface. The second die and the third die are bonded on the first surface of the first die. The protective layer laterally surrounds protrusions of the plurality of TSVs that protrude from the second surface. The interconnect structure are disposed on the protective layer and electrically connected to the plurality of TSVs. The interconnect structure includes a polymer layer covering the protective layer.

Abstract: A novel electric rectifier for use in a rectenna device is provided. The rectenna device can advantageously be used in a variety of applications. The electric rectifier comprises an integrated structure comprising: a diode structure comprising first and second electrodes located in first and second conductive layers respectively and an insulating layer between them, the diode structure being configured and operable for receiving an input signal and generating output signal indicative thereof, and a compensation structure electrically connected in parallel to said diode structure and being configured to compensate the parasitic capacitance of the diode structure when a frequency spectrum of the input signal is beyond the diode's cutoff frequency.

Abstract: A light emitting device package according to an embodiment may include a first package body including first and second openings passing through the upper surface and lower surface thereof; a second package body disposed on the first package body and including a third opening passing through the upper surface and lower surface thereof; a light emitting device disposed in the third opening; a first resin disposed between the upper surface of the first package body and the light emitting device; and a second resin disposed in the third opening.

Abstract: A transistor device includes field plate contacts that electrically connect overlying contact pads to field electrodes in underlying trenches, and mesa contacts that electrically connect the contact pads to semiconductor mesas confined by the trenches. Each field plate contact is divided into field plate contact segments that are separated from one another. Each mesa contact is divided into mesa contact segments that are separated from one another. In a first area adjacent to an end of the trenches, a first line that runs perpendicular to the trenches intersects a first field plate contact segment of the field plate contacts and a first mesa contact segment of the mesa contacts. In a second area spaced inward from the first area, a second line that runs perpendicular to the trenches intersects a second field plate contact segment of the field plate contacts and a second mesa contact segment of the mesa contacts.

Abstract: A fin height monitoring structure including a substrate, isolation structures, a first word line, and a second word line is provided. The substrate includes a first region and a second region. The isolation structures are located in the substrate of the first region to define at least one active area. The substrate in the active area has a fin that is higher than the isolation structures. The first word line is located on the isolation structures of the first region and on the fin of the first region. The second word line is located on the substrate of the second region.

Abstract: A semiconductor device includes through-package debug features enabling debug of a BGA package while mounted to a printed circuit board or other host device. In one example, the through-package debug features are filled or plated vias extending from a surface of the semiconductor device, through a device housing, down to test pads on the substrate. In another example, the through-package debug features are open channels formed from a surface of the semiconductor device.

Abstract: A probe card in an automated test equipment (ATE) and methods for operating the same for testing electronic devices. The probe card may be a portion of a vertical-type probe card assembly in which pads on a circuit board are contacted by probe pins. The probe card has a pad geometry that compensates for misalignment with corresponding probe pins due to manufacturing error or a mismatch of coefficient of thermal expansion, enabling reliable operation of the ATE over a wide range of test temperatures. The pad array may have a plurality of elongated pads, each of uniquely designed size, tilt angle, and/or center location, with the characteristics of each pad being dependent on a distance between each pad and a centroid of the pad array, such that a probe pin to pad location errors can be mitigated.

Abstract: A substrate is orientated parallel to a plane and includes pads that are located at a bottom surface of the substrate and external to the electrical device. A first integrated circuit die is orientated parallel to the plane and disposed above the substrate in a vertical direction. The first integrated circuit die is electrically coupled to at least some of the pads of the substrate. A packaging material is disposed above the first integrated circuit die around at least a top surface and side surfaces of the first integrated circuit die. Test pads are orientated parallel to the plane and disposed above the first integrated circuit die in the vertical direction. The test pads are electrically coupled to the first integrated circuit die and encased within the packaging material.

Abstract: A chip-stacked semiconductor package includes a first chip including a first detection pad and a second detection pad; a second chip provided on the first chip, the second chip including a third detection pad facing the first detection pad and a fourth detection pad facing the second detection pad; and a first medium provided between the first detection pad and the third detection pad to connect the first detection pad to the third detection pad through the first medium, and a second medium, different from the first medium, provided between the second detection pad and the fourth detection pad to connect the second detection pad to the fourth detection pad through the second medium.

Abstract: A semiconductor apparatus includes a semiconductor layer having first and second faces, a semiconductor element portion in which semiconductor elements are provided, and openings each penetrating the semiconductor layer from the second face side, an interconnection structure provided on the first face side, and an insulator portion provided to surround at least one of the openings within a virtual plane along the second face and extend to a depth between T/2 and T from the first face, where T is the thickness of the semiconductor layer. The semiconductor layer includes a semiconductor region of one conductivity type provided on the opposite side to the one opening to the insulator portion within the virtual plane, and a semiconductor region of another conductivity type provided in the semiconductor layer from the insulator portion face on the second face side to the second face in a direction perpendicular to the second face.

Abstract: The present invention provides a method, device, and system for testing devices under testing (DUTs). The method comprises: sending a scan activated signal and a synchronous clock signal via the second signal line, and sending a first preset signal via the serial signal line, wherein each bit of the first preset signal is transmitted to a corresponding scan chain unit in a sequence of serial connection of the plurality of scan chain units with according to the synchronous clock signal, the corresponding scan chain unit is one of the plurality of scan chain units connected serially and coupled to the plurality of DUTs via a third signal line; sending a scan deactivated signal via the second signal line, to deactivate the scan chain units from identifying and receiving the first preset signal; and sending a second preset signal via the second signal line, and sending a test signal via the first signal line.

Abstract: Provided is a package structure including a photonic die, an electronic die, a conductive layer, a circuit substrate, and an underfill. The electronic die is bonded on a front side of the photonic die. The conductive layer is disposed on a back side of the photonic die. The conductive layer includes a plurality of conductive pads and a dam structure between the conductive pads and a first sidewall of the photonic die. The circuit substrate is bonded on the back side of the photonic die through a plurality of connectors and the conductive pads. The underfill laterally encapsulates the connectors, the conductive pads, and the dam structure. The underfill at the first sidewall of the photonic die has a first height, the underfill at a second sidewall of the photonic die has a second height, and the first height is lower than the second height.

Abstract: A die stack structure includes an interconnection structure, a logic die, a control die, a first insulating encapsulant, a dummy die, a memory cube and a second insulating encapsulant. The logic die is electrically connected to the interconnection structure. The logic die comprises a first dielectric bonding structure. The control die is laterally separated from the logic die and electrically connected to the interconnection structure. The first insulating encapsulant laterally encapsulates the logic die and the control die. The dummy die is stacked on the logic die, the logic die is located between the interconnection structure and the dummy die, the dummy die comprises a second dielectric bonding structure, and a bonding interface is located between the first dielectric bonding structure and the second dielectric bonding structure. The memory cube is stacked on and electrically connected to the control die, wherein the control die is located between the interconnection structure and the memory cube.

Abstract: A mother substrate and a display panel are disclosed. The mother substrate includes a plurality of display panels, a plurality of first test terminals and a plurality of first one-way conductive circuits. Each of the display panels has a display area, and includes a plurality of first signal lines extending from outside of the display area to the display area in parallel; the plurality of first signal lines of each of the display panels are respectively electrically connected to one of the plurality of first test terminals; the plurality of first one-way conductive circuits are respectively electrically connected to the plurality of first signal lines outside the display area and are configured to allow signals to be able to transmit only from the plurality of first test terminals to the plurality of first signal lines of each of the display panels.

Abstract: A circuit board has an electrical circuit and a connector that is attached to the circuit board. The connector has metal contacts. A housing of the connector has an embedded reference metal layer that is disposed under a single-ended metal contact or differential metal contacts. The reference metal layer sets the impedance of the single-ended metal contact or the differential metal contacts.

Abstract: A chip and a packaging method thereof. In the chip, first solder pads in a first solder pad array on a first substrate are attached to corresponding second pins in second pin arrays on different dies to implement short-distance and high-density interconnection of the different dies. A molding body is used to wrap a first pin, a second pin, a first solder pad, and the first substrate, so that a fan-out unit and the first substrate are molded into an integral structure. In the integral structure, bottoms of first pins that are in a first pin array on a die and that are electrically connected to a periphery of the chip are not wrapped by the molding body.

Abstract: An array substrate including a substrate, a plurality of fan-out traces and a plurality of bonding terminals. The substrate includes a display area and a non-display area surrounding the display area. The fan-out traces and the bonding terminals are disposed in the non-display area. The bonding terminals are spaced apart from each other. First ends of the fan-out traces are respectively electrically connected to the bonding terminals. Second ends of the fan-out traces are electrically connected to the display area. The fan-out traces include a plurality of first fan-out traces and a plurality of second fan-out traces. The first fan-out traces are formed by a first metal layer. The second fan-out traces are formed by a second metal layer. An insulating layer is provided between the first metal layer and the second metal layer. The first fan-out traces and the second fan-out traces are partially overlapped.

Abstract: Disclosed is a semiconductor package comprising a first semiconductor chip and at least one second semiconductor chip on the first semiconductor chip. The second semiconductor chip includes first and second test bumps that are adjacent to an edge of the second semiconductor chip and are on a bottom surface of the second semiconductor chip. The first and second test bumps are adjacent to each other. The second semiconductor chip also includes a plurality of data bumps that are adjacent to a center of the second semiconductor chip and are on the bottom surface of the second semiconductor chip. A first interval between the second test bump and one of the data bumps is greater than a second interval between the first test bump and the second test bump. The one of the data bumps is most adjacent to the second test bump.

Abstract: A semiconductor device includes: wiring layers laminated in a first direction and including conducting members; and a second wiring layer including a bonding pad electrode. The first wiring layers each include a bonding pad area. The bonding pad area overlaps with the bonding pad electrode viewed in the first direction. The conducting member is absent in an area inside a first imaginary circle with a first point as a midpoint in the bonding pad area. The conducting members are disposed in an area outside a second imaginary circle in the bonding pad area. The second imaginary circle has the first point as a midpoint and has a radius equal to or more than a radius of the first imaginary circle. When the radius of the first imaginary circle is denoted as R1 and the radius of the second imaginary circle is denoted as R2, R2/R1 is smaller than 1/cos(?/4).

Abstract: A semiconductor chip includes a substrate including: a main chip region; and a scribe lane surrounding the main chip region; a lower interlayer insulating layer disposed on the substrate in the scribe lane; a circuit structure disposed on the lower interlayer insulating layer in the scribe lane; and a pad structure disposed on the lower interlayer insulating layer. The circuit structure and the pad structure are disposed to be spaced apart from each other in a longitudinal direction of the scribe lane.

Abstract: A semiconductor device is provided, including: a semiconductor substrate; an active section in which current flows between upper and lower surfaces of the semiconductor substrate; a transistor section provided in the active section; a gate metal layer to supply a gate voltage to the transistor section; a gate pad electrically connected to the gate metal layer; a temperature-sensing unit provided above the active section; a temperature-measurement pad arranged in a peripheral region between the active section and an outermost perimeter of the semiconductor substrate; and a temperature-sensing wire having a longitudinal portion and connecting the temperature-sensing unit and the temperature-measurement pad, wherein on the upper surface of the semiconductor substrate, the gate pad is arranged in a region other than an extending region that is an extension of the longitudinal portion of the temperature-sensing wire to the outermost perimeter of the semiconductor substrate in the longitudinal direction.

Abstract: Embodiments of the disclosure provide a crack detecting and monitoring system, including: a plurality of electrically conductive structures extending about a protective barrier formed in an inactive region of an integrated circuit (IC), wherein an active region of the IC is enclosed within the protective barrier; and a plurality of stages of sensing circuits connected in series for sensing a change in an electrical characteristic of each of the plurality of structures and for receiving an enable signal, wherein each sensing circuit is coupled to a respective structure of the plurality of structures, the change in the electrical characteristic indicating damage to the respective structure, wherein each sensing circuit includes a circuit for selectively generating the enable signal for a next sensing circuit in the plurality of stages of sensing circuits.

Abstract: A display panel includes: a substrate including a display area and a non-display area around the display area; a plurality of scan lines and a plurality of data lines crossing each other on the substrate at the display area; a plurality of pixels connected to the plurality of scan lines and the plurality of data lines; and a test circuit portion on the substrate at the non-display area, the test circuit portion connected to the plurality of data lines. The test circuit portion includes: a lighting test signal line which applies a lighting signal to each of the plurality of data lines; and a crack detection circuit line connected between the plurality of data lines and the lighting test signal line. The crack detection circuit line includes a plurality of signal lines connected to different data lines among the plurality of data lines.

Abstract: The present invention fills a long-felt need for an improved phenol-furan resin composition used as a chimney liner with reduced combustibility, and for the preparation of pre-impregnated fiber-reinforced composite material and its use. The invention shows a higher tolerance for certain conditions that are damaging to other resin compositions including higher heat tolerance and higher tolerance for flue gases and other compounds.

Abstract: The disclosure concerns an electronic chip including a resistive region and a first switch of selection of a first area in contact with the resistive region.

Abstract: An extension of conventional IC fabrication processes to include some of the concepts of flip-chip assemblies while producing a final “non-flip chip” circuit structure suitable for conventional packaging or for direct usage by customers. Multiple IC dies are fabricated on a semiconductor wafer in a conventional fashion, solder bumped or the like, and singulated. The singulated dies, which may be of different sizes and functionality, are then flip-chip assembled onto a single tile substrate of thin-film material which has been patterned with vias, peripheral connection pads, and one or more ground planes. Once dies are flip-chip mounted to the thin-film tile, all of the dies on the entire tile may be probed using automated testing equipment. Sets of dies of different functionality may be tested as a system or subsystem. Once test probing is complete, the dies (or sets of dies) and tile are singulated into die/tile assemblies.

Abstract: A semiconductor package includes a frame having a first surface, a second surface opposite the first surface, and a through-hole, a first semiconductor chip in the through-hole of the frame, a second semiconductor chip on the frame, a first connection structure on the first surface of the frame and including a first redistribution structure electrically connected to the first semiconductor chip and having a third surface contacting the first surface of the frame, the first redistribution structure including a first redistribution layer and a first redistribution via, a first pad on a center portion of a fourth surface of the first redistribution structure opposite the third surface, a second pad on an edge portion of the fourth surface, a second connection structure on the second surface and comprising a second redistribution structure electrically connected to the second semiconductor chip and including a second redistribution layer and a second redistribution via, and an electrical connection metal on the f

Abstract: An X-ray imaging system includes the following. An X-ray Talbot imaging apparatus includes an X-ray source, a plurality of gratings, and an X-ray detector. An X-ray is irradiated from the X-ray source through the examined target which is an object and the plurality of gratings and to the X-ray detector to obtain a moire image necessary to generate the reconstructed image of the examined target. A first database shows, for each name or type of material, a correlation between information regarding a signal strength in the reconstructed image generated based on the moire image and quality information of the material included in the examined target. A controller estimates as the evaluation index the quality information in the examined target from the reconstructed image based on information regarding the input name or the type of material and input shape information and the first database.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate and a first crack-detecting structure positioned in the substrate and comprising a first capacitor unit. The first capacitor unit comprises a first bottom conductive layer positioned in the substrate, a first capacitor insulating layer surrounding the first bottom conductive layer, and a first buried plate surrounding the first capacitor insulating layer.

Abstract: The present disclosure relates to a semiconductor device, a method for manufacturing a semiconductor device, and a plasma-induced damage (PID) protection device capable of, without increasing a chip area, releasing a large PID with high efficiency and protecting an element to be protected from the PID with higher accuracy. There are provided a protection metal-oxide-semiconductor field-effect transistor (MOSFET) that includes a drain connected to a gate electrode of a MOSFET to be protected and a grounded source and protects the MOSFET to be protected from a plasma-induced damage (PID), and a dummy antenna connected to a gate electrode of the protection MOSFET, the dummy antenna turning on the protection MOSFET prior to the MOSFET to be protected due to PID charge. The present disclosure can be applied to a semiconductor device.

Abstract: The present disclosure provides a display panel and a method for manufacturing the same. The method includes providing a substrate including a display area and a non-display area. A chip on film (COF) and a testing structure are disposed in the non-display area. A testing circuit includes a signal trace including a non-metal trace and a metal trace connecting to each other. A cutting line is disposed on the signal trace. The method further includes testing the display area of the substrate by the testing structure, and removing a test pad.

Abstract: A semiconductor die includes one or more semiconductor devices (e.g., memory array, processors), first and second banks of I/O ports arranged along one or more sides of the die, and a multiplexing circuit. The multiplexing circuit can be changed between a first state and a second state. In the first state the first bank of I/O ports is coupled to the semiconductor device(s) and the second bank of I/O ports is not coupled to the semiconductor device(s), and in the second state the first bank of I/O ports is not coupled to the semiconductor device(s) and the second bank of I/O ports is coupled to the semiconductor device(s). The state of the multiplexing circuit can be set, for example, by an on-die fuse circuit or an externally accessible select line. The semiconductor die can be included in a chip package, which can be included on a printed circuit board.

Abstract: High bandwidth memories and systems including the same may include a buffer die, a plurality of memory dies stacked on the buffer die, a plurality of dummy bump groups in edge regions of the buffer die and the plurality of memory dies, and a plurality of signal line groups. Each of the plurality of dummy bump groups includes dummy bumps spaced apart from each other between each pair of adjacent dies and configured to connect the two adjacent dies to each other. Each of the signal line groups includes a plurality of signal lines configured to transmit a corresponding signal among an input signal and a plurality of bump crack detection signals applied to an input dummy bump of each of the plurality of dummy bump groups via sequential transmission through the plurality of dummy bumps to an output dummy bump during a bump crack test operation.

Abstract: A semiconductor device includes a semiconductive substrate, a dielectric stack disposed over the semiconductive substrate, a probe pad formed on the dielectric stack, a test key embedded in the semiconductor device and a single via string stacking extending along a direction from a level of the probe pad to the semiconductive substrate and electrically connecting the periphery of the probe pad to the test key. A semiconductor device includes a semiconductive substrate, a dielectric stack, a probe pad, a test key, an extension segment electrically connected to the periphery of the probe pad and laterally extending from the probe pad from a top view, and a single via string stacking extending along a direction from the probe pad to the semiconductive substrate and electrically connecting the extension segment to the test key. The single via string stacking and the probe pad are laterally offset from a top view.

Abstract: A semiconductor structure includes a substrate, a device, a contact via, a metal/dielectric layer, and a test structure. The device is over the substrate. The contact via is connected to the device. The metal/dielectric layer is over the contact via. The metal/dielectric layer includes a first portion and a second portion. The first portion of the metal/dielectric layer has a metallization pattern connected to the contact via. The second portion of the metal/dielectric layer is void of metal. The test structure is over the second portion of the metal/dielectric layer.

Abstract: A semiconductor device includes a substrate; an insulating layer positioned above the substrate, wherein the insulating layer has two ends; a first doped region formed in the substrate and positioned at one end of the two ends of the insulating layer; a second doped region formed in the substrate and positioned at the other end of the two ends of the insulating layer, wherein the second doped region is opposite to the first doped region; a control terminal positioned above the insulating layer; a first fuse head positioned above the control terminal and electrically coupled to the first doped region; a second fuse head positioned above the first fuse head; and a fuse area positioned between the first fuse head and the second fuse head.

Abstract: A process monitor circuitry is described that can measure the electron mobility (?), oxide capacitance (Cox) and threshold voltage (Vth) of an integrated circuit.