Abstract: Methods for generating a cell set for an analog design tool are disclosed. A method comprises receiving, at a cell generator, one or more electronic files of a process-specific architectural cell (AP_Cell) having wiring for power and ground, FILL, wherein the AP_Cell is configured according to a first manufacturing process. The method further includes receiving, at the cell generator, one or more electronic files of a schematic cell (S_Cell) having internal wiring between circuit elements to provide a function for the S_Cell. The method also includes merging data from the one or more electronic files of the AP_Cell and the one or more electronic files of the S_Cell to generate a process-specific schematic cell (SP_Cell) used as a building block for a physical layout of an analog IC, wherein the process-specific schematic cell comprises one or more electronic files. Related devices are also described herein.

Abstract: A plurality of semiconductor devices (5) are formed on a semiconductor wafer (1). A film thickness measurement wiring pattern (3,4) is formed on a dicing line (6,7) defining the plurality of semiconductor devices (5). An SOG film (10) is formed on the semiconductor devices (5) and the film thickness measurement wiring pattern (3,4). A film thickness of the SOG film (10) at a central part of the film thickness measurement wiring pattern (3,4) is measured. The film thickness measurement wiring pattern (3,4) is a rectangular pattern having long sides parallel to the dicing line (3,4).

Abstract: A semiconductor device includes a first normal pattern which is disposed in an active area of a semiconductor chip, wherein the first normal pattern has a particular shape and the active area includes circuitry for operating the semiconductor chip, and includes a first defective pattern and a second normal pattern which are disposed in a dummy area of the semiconductor chip, wherein the dummy area of the semiconductor chip is an area that does not perform functions for operating the semiconductor chip. The second normal pattern has the same shape as the first normal pattern and the first defective pattern has the same shape as the first normal pattern except for a first defect. The first normal pattern is disposed at a first level layer of the semiconductor chip.

Abstract: A packaged semiconductor device includes a substrate with first and second opposing major surfaces. A stacked semiconductor device structure is connected to the first major surface and includes a plurality of semiconductor die having terminals. Conductive interconnect structures electrically connect the terminals of the semiconductor dies together. The semiconductor dies are stacked together so that the terminals are exposed, and the stacked semiconductor device structure comprises a stepped profile. The conductive interconnect structures comprise a conformal layer that substantially follows the stepped profile.

Abstract: A semiconductor apparatus includes a plurality of chips and a first bypass switch. The chips are coupled in series between a power end and a reference ground end. The first bypass switch is coupled in series between a first end and a second end of a first chip among the chips, wherein the first end is coupled to the power end and the second end is coupled to the reference ground end. The first bypass switch is turned on according to a first control signal when an operational efficiency of the first chip is less than a threshold value and the first chip is determined to be damaged.

Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.

Abstract: A semiconductor device is disclosed including a memory module formed from a pair of semiconductor dies mounted face to face to each other at the wafer level. These die pairs are formed using wafer-to-wafer bonding technology, where the wafers may be bonded to each other when they are of full thickness. Once bonded, respective inactive surfaces of the wafers may be thinned and then the die pairs diced from the wafers to form a completed memory module. When the wafers are bonded face to face, they compensate each other, mechanically resulting in the die pair having a minimum warpage.

Abstract: An operating method of a memory device includes: instructing, by a master chip, a first memory chip and a second memory chip to perform a read operation; transferring, by the first memory chip, data stored in the first memory chip to the master chip through a first through-chip channel in response to the read operation instruction, and transferring, by the second memory chip, data stored in the second memory chip to the master chip through a second through-chip channel in response to the read operation instruction; comparing, by the master chip, a phase of the data transferred through the first through-chip channel with a phase of the data transferred through the second through-chip channel; and adjusting a delay value of a data transmission channel of at least one of the first memory chip and the second memory chip based on a result of the comparing.

Abstract: An electro-optical apparatus having an ASIC electrically linked, by way of a multistage SerDes, to an array of optical data transmitters and receivers. In an example embodiment, a first SerDes stage is connected to the ASIC by a plurality of relatively wide, short electrical buses and further connected to a second SerDes stage by a plurality of narrower, longer electrical buses. The second SerDes stage is located in close proximity to the transmitter/receiver array to enable the signals transmitted therebetween to be switched at a high frequency rate, e.g., higher than 500 MHz. The width and length of said narrower, longer electrical buses are selected such as to support a high overall data throughput for the corresponding electrical data links between the ASIC and the transmitter/receiver array while being able to afford acceptable levels of signal integrity, power usage, and timing skews in these links.

Abstract: Embodiments of the invention provide an electronic system for generating secret information comprising a Physically Unclonable Function (PUF) circuit, the PUF circuit being configured to provide a difference between two values of a physical variable of the PUF in response to a challenge applied to the PUF circuit. The system is configured to apply a set of challenges during an enrolment phase, and measure the physical variable difference provided by the PUF in response to each challenge. The system further comprises: A helper data generator (2) configured to generate a helper data comprising a set of bits, a bit of the helper data being generated in association with each applied challenge, the helper data generator being configured to generate each helper data bit from the physical variable difference provided by the PUF in response to the application of the associated challenge, the system further comprising a secret information generator (3) for extracting secret information from the helper data.

Abstract: Embodiments of methods for testing three-dimensional memory devices are disclosed. The method can include: applying an input signal to a first conductive pad of the memory device by a first probe of a probe card; transmitting the input signal through the first conductive pad, a first TAC, a first interconnect structure passing through a bonding interface of the memory device, at least one of a memory array contact and a test circuit to a test structure; receiving an output signal through a second interconnect structure passing through the bonding interface, a second TAC, at least one of the memory array contact and the test circuit from the test structure; measuring the output signal from a second conductive pad of the memory device by a second probe of the probe card; and determining a characteristic of the test structure based on the input signal and the output signal.

Abstract: A flexible circuit board for a display, having a chip-on-film structure, is disclosed. A connection pattern which is selected as a first connection pattern among connection patterns connected to panel contact pads does not reach a cutting line and is confined within a product region. As a consequence, the connection pattern selected as the first connection pattern may be prevented from being exposed on a cutting section along the cutting line, and thus, may be prevented from being changed in its electrical property due to penetration of moisture.

Abstract: A base substrate include a first substrate (110) having a first principal surface (110a) and a second principal surface (110b), and a first wiring member placed over the first or second principal surface. A pixel substrate includes a second substrate (201) having a third principal surface (201a) and a fourth principal surface (201b), a plurality of light-emitting elements (202) mounted over the third principal surface, a driver IC (205) mounted over the third principal surface, an external connection terminal mounted over the third principal surface, and a second wiring member (206) placed on the third or fourth principal surface. The driver IC drives the plurality of light-emitting elements. The external connection terminal receives an input signal that is supplied from outside the pixel substrate. The second substrate (201) is disposed to be stacked on top of the first substrate (110) so that the first principal surface and the fourth principal surface face each other.

Abstract: The present application provides a thin film transistor (TFT) and a method of fabricating the same, a display substrate and a method of fabricating the same, and a display device. The TFT includes a substrate, and a source electrode, a drain electrode and an active layer on the substrate. The active layer includes first and second active layers, the first active layer has a carrier mobility greater than that of the second active layer, and the second active layer is closer to the source electrode and the drain electrode than the first active layer. An orthographic projection of the source electrode on the substrate and an orthographic projection of the drain electrode on the substrate at least partially overlap with an orthographic projection of the second active layer on the substrate, respectively, and the first active layer is separated from the source electrode and the drain electrode.

Abstract: Provided is a method of manufacturing a printed circuit board having test points in which test points and pads are formed on the printed circuit board and then are electrically connected to each other, so that it is possible to form the pads having a pitch interval smaller than that in the related art. This may contribute to miniaturization of the printed circuit board by mounting a connector smaller than that in the related art on the printed circuit board, and may enable the preformed test points to be used as they are even after the connector used is removed from the printed circuit board. Also provided is a printed circuit board manufactured thereby.

Abstract: A wafer surface test preprocessing device includes a chamber; a supporting component disposed in the chamber; an atomizer connected to a lateral side of the chamber; a cooling component connected to a bottom of the chamber; and a lid disposed on a top of the chamber. With the wafer surface test preprocessing device having the cooling component to thereby dispense with a ventilation device and collect hydrofluoric acid residues in the chamber at the bottom of the chamber, thereby saving costs and time effectively.

Abstract: The various technologies presented herein relate to measuring a signal generated by a die-based test circuit incorporated into an IC and utilizing the measured signal to authenticate the IC. The signal can be based upon a sensor response generated by the test circuit fabricated into the die, wherein the sensor response is based upon a property of the die material. The signal can be compared with a reference value obtained from one or more test circuit(s) respectively located on one or more reference dies, wherein the reference dies are respectively cut from different wafers, and the location at which the reference dies were cut is known. If the measured signal matches the reference value, the die is deemed to be from the same cut location as the dies from which the reference value was obtained. If the measured signal does not match the reference value, the die is not authenticated.

Abstract: A sensor for detecting particles is presented comprises a silicon wafer substrate and a charge detection layer mounted on the silicon wafer substrate, wherein the charge detection layer comprises a plurality of discrete pixel sensors. The sensor further comprises a converter material, wherein the converter material is operable to interact with a first type of particle to generate a reaction, wherein the reaction produces charged particles, wherein the charge detection layer is configured to detect the charged particles produced by the reaction. Further, the sensor comprises a substrate layer operable to filter a second type of particle, wherein the converter material is coated on an underside of the substrate layer such that the converter material faces the charge detection layer and an air gap is formed between the converter material and the charge detection layer.

Abstract: A method for detecting overlay misalignment of a semiconductor device uses a test structure that includes a sensor structure and a via-chain structure. The sensor structure is disposed in a first layer on a semiconductor substrate and includes a plurality of first conductive lines extending in a first direction. Each first conductive line is separated from an adjacent first conductive line in a second direction by a first space. The via-chain structure is in a second layer above the first layer and between the first layer and the second layer. The via-chain structure includes at least one second conductive line disposed in the second layer and at least one via electrically connected to each second conductive line and extending toward the first layer. The at least one via is disposed in the first space between the adjacent first conductive lines of the sensor structure.

Abstract: A light guide body is held in a more compact holder. In a lighting device (10A) including a light emitter (20), an optical fiber (30), and a holder (40) configured to hold the optical fiber (30) with the optical fiber (30) facing the light emitter (20), the holder (40) includes two sandwiching portions (44, 45) configured to engage with each other in a state in which a holding target portion (31) of the optical fiber (30) held by the holder (40) is sandwiched in a first direction crossing an extending direction of the holding target portion (31). Two sandwiching portions (44, 45) engage with each other at positions adjacent to the holding target portion (31) in a second direction crossing both of the extending direction and the first direction.

Abstract: Systems and methods for die crack detection are disclosed. In one exemplary embodiment, a die includes a first conductive segment, an intermediate conductive segment, and a second conductive segment. The crack detection ring substantially surrounds the die according to a serpentine path having a plurality of legs, wherein each leg intersects the first conductive segment at a first intersection, an intermediate conductive segment at an intermediate intersection and a second conductive segment at a second intersection, wherein the intermediate intersection is horizontally offset from at least the first intersection and the second intersection.

Abstract: A semiconductor memory device includes first bumps positioned along a first direction; second bumps positioned in parallel to the first bumps along the first direction; first registers connected with the first bumps; and second registers connected with the second bumps. The first registers and the second registers are sequentially connected and form a shift register.

Abstract: Providing for two-terminal memory that mitigates diffusion of external material therein is described herein. In some embodiments, a two-terminal memory cell can comprise an electrode layer. The electrode layer can be at least in part permeable to ionically or chemically reactive material, such as oxygen or the like. The two-terminal memory can further comprise a diffusion mitigation material disposed between the electrode layer and external material. This diffusion mitigation material can be selected to mitigate or prevent diffusion of the undesired element(s) or compound(s), to mitigate or avoid exposure of such element(s) or compound(s) to the electrode layer. Accordingly, degradation of the two-terminal memory as a result of contact with the undesired element(s) or compound(s) can be mitigated by various disclosed embodiments.

Abstract: A semiconductor package includes a substrate and a semiconductor chip disposed thereon. The substrate includes first and second connection pads adjacent to a first edge of the semiconductor chip, and third and fourth connection pads adjacent to a second edge opposite to the first edge. The semiconductor chip includes fifth and sixth connection pads in a first region close to the first edge, and seventh and eighth connection pads in a second region close to the second edge. A first and a second comb-type conductive layer are further disposed over the first region, and respectively connected to the first and fifth connection pads, and the second and sixth connection pads via wirings. A third and a fourth comb-type conductive layer are further disposed over the second region, and respectively connected to the fourth and eighth connection pads, and the third and seventh connection pads via wirings.

Abstract: Apparatuses and methods for self-refreshing a plurality of dies are described. An example apparatus includes a first die including a first bank and a second bank, the first bank and the second bank including memory cells; and a second die vertically stacked with the first die, the second die including a third bank and a fourth bank, the third bank and the fourth bank including memory cells. The third bank is vertically aligned with the first bank. The first bank and the fourth bank are configured to be refreshed prior to refreshing the second bank and the fourth bank.

Abstract: A display device including a substrate having a display area and a non-display area outside the display area, a plurality of pixels disposed in the display area on the substrate, a plurality of data lines connected to the pixels, a first crack detection line disposed in the non-display area on the substrate, the first crack detection line being electrically connected to at least one of the data lines, and a second crack detection line disposed in the non-display area outside the first crack detection line, the second crack detection line being electrically connected to at least one of the data lines.

Abstract: Provided is an apparatus for testing randomness of a digital value and processing the digital value. The digital value may include first bit sequences generated by a physically unclonable function (PUF). A grouping unit may generate a plurality of groups by segmenting the first bit sequence, and a processing unit may calculate a second bit sequence from the plurality of groups by performing a logical operation.

Abstract: At least one embodiment of the present disclosure provides a display substrate motherboard, a display substrate, a fabrication method thereof and a display device. The display substrate motherboard includes at least one display substrate unit, the display substrate unit includes a display region, a bonding region and a detection region, the bonding region is located on a side of the display region and the detection region is located on a side of the display region different from the bonding region and configured to detect the display substrate unit.

Abstract: A display device includes a substrate includes a display area having a plurality of pixels, a pad area including a plurality of input pads, and a circuit area positioned between the pad area and the display area; a crack sensor having a first end and a second end, the first end being connected to a first input pad of the plurality of input pads; a first shorting element extending through the pad area, the first shorting element being connected to the second end and extending to an edge of the substrate; a plurality of data lines connected to the plurality of pixels; and a crack sensing circuit including a first switching element having an input terminal connected to the first end and an output terminal connected to a first data line of the plurality of data lines, and a second switching element having an input terminal connected to the second end and an output terminal connected to a second data line of the plurality of data lines.

Abstract: The invention relates to an electronic component with a high-electron-mobility heterojunction. The component includes a superposition of a first semiconductor layer and of a second semiconductor layer, to form an electron-gas layer in proximity to the interface between the first and second semiconductor layers, and first and second conductive metal electrode contacts formed on said second semiconductor layer plumb with the electron-gas layer. At least one of the first and second metal contacts has a contact length L such that L?1.5*?(?c/R2 Deg), where ?c is the specific resistance of the metal contact with the electron-gas layer at 425 K and R2 Deg is the sheet resistance in the electron-gas layer at 425 K.

Abstract: According to one embodiment of the present invention, a multiplex PCR device is disclosed. The multiplex PCR device comprises a multiplex PCR chip simultaneously carrying a plurality of mutually different nucleic acid molecules, and the invention may be characterised in that, attached spaced apart from each other on the multiplex PCR chip, there are a plurality of probes used for hybridization reactions whereby hybridization takes place specifically with mutually different amplified sequences of the nucleic acid molecules.

Abstract: A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

Abstract: A method for detecting defects in deep features like channel holes, via holes or trenches based on laser-enhanced electron tunneling effect. A substrate having thereon a film stack is provided. First and second deep features are formed in the film stack. The first deep feature has a sacrificial oxide layer disposed at its bottom. The second deep feature comprises an under-etch defect. The sacrificial oxide layer has a thickness of less than 50 angstroms. The substrate is subjected to a laser-enhanced electron beam inspection process. The substrate is scanned by an electron beam and illuminated by a laser beam. The laser beam induces electron tunneling across the sacrificial protection layer, thereby capturing a bright voltage contrast (BVC) signal corresponding to the first deep feature, and detecting a dark voltage contrast (DVC) signal corresponding to the second deep feature.

Abstract: An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.

Abstract: Apparatus and associated methods relating to reducing lock time include pre-calibrating and storing phase-locked loop (PLL) and/or injection-locked oscillator (ILO) adaptation values during startup and loading the pre-calibrated values during rate change. In an illustrative example, an integrated circuit may include a controllable frequency circuit operable at frequencies within each of a plurality of frequency bands. A data store may store operational settings associated with each frequency of the plurality of frequency bands. A state machine may be coupled to the controllable frequency circuit and the data store configured to select a predetermined frequency band in response to a command signal, retrieve, from the data store, operational settings associated with the predetermined frequency band, and, apply the retrieved operational settings to the controllable frequency circuit.

Abstract: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

Abstract: Structures for testing a field effect-transistor or Kelvin field-effect transistor, and methods of forming a structure for testing a field-effect transistor or Kelvin field-effect transistor. The structure includes a device-under-testing that has one or more source/drain regions and a first metallization level arranged over the device-under-testing. The first metallization level includes one or more first interconnect lines. The structure further includes a contact level having one or more first contacts arranged between the first metallization level and the device-under-testing. The one or more first contacts directly connect the one or more first interconnect lines with the one or more source/drain regions. The structure further includes a second metallization level arranged over the first metallization level. The second metallization level has a first test pad and one or more second interconnect lines connecting the one or more first interconnect lines with the first test pad.

Abstract: Provided is a semiconductor device, a measurement device, a measurement method, and a semiconductor system that enable accurate measurement of the plasma induced damage (PID) effect on a small scale. The semiconductor device includes an NMOSFET whose gate is connected to an antenna part that functions as an antenna in a plasma process and a PMOSFET that controls the connection between the NMOSFET and a ring oscillator. The semiconductor device is provided with a test element group (TEG) that includes an NMOSFET whose gate is connected to an antenna part that functions as an antenna in a plasma process and a PMOSFET that controls the connection between the NMOSFET and a ring oscillator.

Abstract: Structures for testing a field effect-transistor or Kelvin field-effect transistor, and methods of forming a structure for testing a field-effect transistor or Kelvin field-effect transistor. The structure includes a test pad, a device-under-testing having one or more source/drain regions, and a metallization level arranged over the device-under-testing. The metallization level includes one or more interconnect lines that are connected with the test pad. One or more contacts, which are arranged between the metallization level and the device-under-testing, directly connect the one or more interconnect lines with the one or more source/drain regions.

Abstract: An IC includes a contiguous standard cell area with first, second, and third TS-GATE-short-configured test area geometries disposed therein. In some embodiments, the contiguous standard cell area may further include: fourth and fifth TS-GATE-short-configured test area geometries, and/or other test area geometries, such as tip-to-tip-short, tip-to-side-short, diagonal-short, corner-short, interlayer-overlap-short, via-chamfer-short, merged-via-short, snake-open, stitch-open, via-open, or metal-island-open.

Abstract: Disclosed herein may be an apparatus and method for detecting ion migration. The apparatus may include: a first printed circuit board (PCB) pad coupled with a ground; a second PCB pad disposed at a position spaced apart from the first PCB pad; a power supply unit configured to supply power to the second PCB pad; a voltage detection unit configured to detect a voltage of an output terminal of the first PCB pad; and a control unit configured to determine whether ion migration has occurred between the first PCB pad and the second PCB pad using the voltage detected by the voltage detection unit.

Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

Abstract: Provided is an apparatus for generating digital values to provide a random digital value. The apparatus may generate the digital value based on a semiconductor process variation. The apparatus may include a generating unit to generate a plurality of digital values, based on the semiconductor process variation, and a processing unit to process the digital values and to provide a first digital value. The generating unit may include a plurality of physically unclonable functions (PUFs). A parameter may be differently applied to the PUFs, and the PUFs may generate the digital values.

Abstract: An example apparatus includes a semiconductor wafer with a plurality of probe pads each formed centered in scribe streets and intersected by saw kerf lanes. Each probe pad includes a plurality of lower level conductor layers arranged in lower level conductor frames, a plurality of lower level vias extending vertically through lower level insulator layers and electrically coupling the lower level conductor frames; a plurality of upper level conductor layers, each forming two portions on two outer edges of the probe pad, the two portions aligned with, spaced from, and on opposite sides of the saw kerf lane, the coverage of the upper level conductor layers being less than about twenty percent; and a plurality of upper level vias extending vertically through upper level insulator layers and coupling the upper level conductor layers electrically to one another and to the lower level conductor layers. Methods are disclosed.

Abstract: A base substrate include a first substrate (110) having a first principal surface (110a) and a second principal surface (110b), and a first wiring member placed over the first or second principal surface. A pixel substrate includes a second substrate (201) having a third principal surface (201a) and a fourth principal surface (201b), a plurality of light-emitting elements (202) mounted over the third principal surface, a driver IC (205) mounted over the third principal surface, an external connection terminal mounted over the third principal surface, and a second wiring member (206) placed on the third or fourth principal surface. The driver IC drives the plurality of light-emitting elements. The external connection terminal receives an input signal that is supplied from outside the pixel substrate. The second substrate (201) is disposed to be stacked on top of the first substrate (110) so that the first principal surface and the fourth principal surface face each other.

Abstract: Disclosed is a multi-chip module (MCM) with redundant chip-to-chip communication connection(s) to minimize the need to discard a chip-mounting layer due to defective signal traces. The MCM includes at least first and second chips mounted on the chip-mounting layer. The chip-mounting layer includes signal traces that are electrically connected between first and second links on the first and second chips, respectively, to form communication connections including at least one redundant communication connection. Instead of being directly connected to the chip-to-chip communication connections, first and second interfaces on the first and second chips are connected via first and second multiplexors, respectively, to selected ones of multiple chip-to-chip communication connections. By employing the multiplexors and the redundant chip-to-chip communication connection(s), chip-to-chip communication connection(s) with defective signal trace(s) can be bypassed.

Abstract: A testing architecture for integrated circuits on a wafer includes at least one first circuit of a structure test element group (TEG) realized in a scribe line providing separation between first and second integrated circuits. At least one pad is shared by a second circuit inside at least one of the first and second integrated circuits and the first circuit. Switching circuitry is coupled to the at least one pad and to the first and second circuits.

Abstract: A method of micro-transfer printing comprises providing a component source wafer and components disposed in, on, or over the component source wafer. A destination substrate and a stamp for transferring the components from the component source wafer to the destination substrate is provided. The component source wafer has an attribute or structure that varies across the component source wafer that affects the structure, operation, appearance, or performance of the components. A first array of components is transferred from the component source wafer to the destination substrate with a first orientation. A second array of components is transferred from the component source wafer to the destination substrate with a second orientation different from the first orientation. Components can be transferred by micro-transfer printing and different orientations can be a different rotation, overlap, interlacing, or offset.

Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

Abstract: A method of manufacturing a semiconductor structure includes forming a redistribution layer (RDL); forming a conductive member over the RDL; performing a first electrical test through the conductive member; disposing a first die over the RDL; performing a second electrical test through the conductive member; and disposing a second die over the first die and the conductive member.