Abstract: Providing for two-terminal memory that mitigates diffusion of external material therein is described herein. In some embodiments, a two-terminal memory cell can comprise an electrode layer. The electrode layer can be at least in part permeable to ionically or chemically reactive material, such as oxygen or the like. The two-terminal memory can further comprise a diffusion mitigation material disposed between the electrode layer and external material. This diffusion mitigation material can be selected to mitigate or prevent diffusion of the undesired element(s) or compound(s), to mitigate or avoid exposure of such element(s) or compound(s) to the electrode layer. Accordingly, degradation of the two-terminal memory as a result of contact with the undesired element(s) or compound(s) can be mitigated by various disclosed embodiments.

Abstract: Systems and methods for die crack detection are disclosed. In one exemplary embodiment, a die includes a first conductive segment, an intermediate conductive segment, and a second conductive segment. The crack detection ring substantially surrounds the die according to a serpentine path having a plurality of legs, wherein each leg intersects the first conductive segment at a first intersection, an intermediate conductive segment at an intermediate intersection and a second conductive segment at a second intersection, wherein the intermediate intersection is horizontally offset from at least the first intersection and the second intersection.

Abstract: A semiconductor memory device includes first bumps positioned along a first direction; second bumps positioned in parallel to the first bumps along the first direction; first registers connected with the first bumps; and second registers connected with the second bumps. The first registers and the second registers are sequentially connected and form a shift register.

Abstract: A light guide body is held in a more compact holder. In a lighting device (10A) including a light emitter (20), an optical fiber (30), and a holder (40) configured to hold the optical fiber (30) with the optical fiber (30) facing the light emitter (20), the holder (40) includes two sandwiching portions (44, 45) configured to engage with each other in a state in which a holding target portion (31) of the optical fiber (30) held by the holder (40) is sandwiched in a first direction crossing an extending direction of the holding target portion (31). Two sandwiching portions (44, 45) engage with each other at positions adjacent to the holding target portion (31) in a second direction crossing both of the extending direction and the first direction.

Abstract: A semiconductor package includes a substrate and a semiconductor chip disposed thereon. The substrate includes first and second connection pads adjacent to a first edge of the semiconductor chip, and third and fourth connection pads adjacent to a second edge opposite to the first edge. The semiconductor chip includes fifth and sixth connection pads in a first region close to the first edge, and seventh and eighth connection pads in a second region close to the second edge. A first and a second comb-type conductive layer are further disposed over the first region, and respectively connected to the first and fifth connection pads, and the second and sixth connection pads via wirings. A third and a fourth comb-type conductive layer are further disposed over the second region, and respectively connected to the fourth and eighth connection pads, and the third and seventh connection pads via wirings.

Abstract: Apparatuses and methods for self-refreshing a plurality of dies are described. An example apparatus includes a first die including a first bank and a second bank, the first bank and the second bank including memory cells; and a second die vertically stacked with the first die, the second die including a third bank and a fourth bank, the third bank and the fourth bank including memory cells. The third bank is vertically aligned with the first bank. The first bank and the fourth bank are configured to be refreshed prior to refreshing the second bank and the fourth bank.

Abstract: A display device including a substrate having a display area and a non-display area outside the display area, a plurality of pixels disposed in the display area on the substrate, a plurality of data lines connected to the pixels, a first crack detection line disposed in the non-display area on the substrate, the first crack detection line being electrically connected to at least one of the data lines, and a second crack detection line disposed in the non-display area outside the first crack detection line, the second crack detection line being electrically connected to at least one of the data lines.

Abstract: At least one embodiment of the present disclosure provides a display substrate motherboard, a display substrate, a fabrication method thereof and a display device. The display substrate motherboard includes at least one display substrate unit, the display substrate unit includes a display region, a bonding region and a detection region, the bonding region is located on a side of the display region and the detection region is located on a side of the display region different from the bonding region and configured to detect the display substrate unit.

Abstract: Provided is an apparatus for testing randomness of a digital value and processing the digital value. The digital value may include first bit sequences generated by a physically unclonable function (PUF). A grouping unit may generate a plurality of groups by segmenting the first bit sequence, and a processing unit may calculate a second bit sequence from the plurality of groups by performing a logical operation.

Abstract: A display device includes a substrate includes a display area having a plurality of pixels, a pad area including a plurality of input pads, and a circuit area positioned between the pad area and the display area; a crack sensor having a first end and a second end, the first end being connected to a first input pad of the plurality of input pads; a first shorting element extending through the pad area, the first shorting element being connected to the second end and extending to an edge of the substrate; a plurality of data lines connected to the plurality of pixels; and a crack sensing circuit including a first switching element having an input terminal connected to the first end and an output terminal connected to a first data line of the plurality of data lines, and a second switching element having an input terminal connected to the second end and an output terminal connected to a second data line of the plurality of data lines.

Abstract: The invention relates to an electronic component with a high-electron-mobility heterojunction. The component includes a superposition of a first semiconductor layer and of a second semiconductor layer, to form an electron-gas layer in proximity to the interface between the first and second semiconductor layers, and first and second conductive metal electrode contacts formed on said second semiconductor layer plumb with the electron-gas layer. At least one of the first and second metal contacts has a contact length L such that L?1.5*?(?c/R2 Deg), where ?c is the specific resistance of the metal contact with the electron-gas layer at 425 K and R2 Deg is the sheet resistance in the electron-gas layer at 425 K.

Abstract: According to one embodiment of the present invention, a multiplex PCR device is disclosed. The multiplex PCR device comprises a multiplex PCR chip simultaneously carrying a plurality of mutually different nucleic acid molecules, and the invention may be characterised in that, attached spaced apart from each other on the multiplex PCR chip, there are a plurality of probes used for hybridization reactions whereby hybridization takes place specifically with mutually different amplified sequences of the nucleic acid molecules.

Abstract: A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

Abstract: A method for detecting defects in deep features like channel holes, via holes or trenches based on laser-enhanced electron tunneling effect. A substrate having thereon a film stack is provided. First and second deep features are formed in the film stack. The first deep feature has a sacrificial oxide layer disposed at its bottom. The second deep feature comprises an under-etch defect. The sacrificial oxide layer has a thickness of less than 50 angstroms. The substrate is subjected to a laser-enhanced electron beam inspection process. The substrate is scanned by an electron beam and illuminated by a laser beam. The laser beam induces electron tunneling across the sacrificial protection layer, thereby capturing a bright voltage contrast (BVC) signal corresponding to the first deep feature, and detecting a dark voltage contrast (DVC) signal corresponding to the second deep feature.

Abstract: Apparatus and associated methods relating to reducing lock time include pre-calibrating and storing phase-locked loop (PLL) and/or injection-locked oscillator (ILO) adaptation values during startup and loading the pre-calibrated values during rate change. In an illustrative example, an integrated circuit may include a controllable frequency circuit operable at frequencies within each of a plurality of frequency bands. A data store may store operational settings associated with each frequency of the plurality of frequency bands. A state machine may be coupled to the controllable frequency circuit and the data store configured to select a predetermined frequency band in response to a command signal, retrieve, from the data store, operational settings associated with the predetermined frequency band, and, apply the retrieved operational settings to the controllable frequency circuit.

Abstract: An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.

Abstract: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

Abstract: Structures for testing a field effect-transistor or Kelvin field-effect transistor, and methods of forming a structure for testing a field-effect transistor or Kelvin field-effect transistor. The structure includes a device-under-testing that has one or more source/drain regions and a first metallization level arranged over the device-under-testing. The first metallization level includes one or more first interconnect lines. The structure further includes a contact level having one or more first contacts arranged between the first metallization level and the device-under-testing. The one or more first contacts directly connect the one or more first interconnect lines with the one or more source/drain regions. The structure further includes a second metallization level arranged over the first metallization level. The second metallization level has a first test pad and one or more second interconnect lines connecting the one or more first interconnect lines with the first test pad.

Abstract: Structures for testing a field effect-transistor or Kelvin field-effect transistor, and methods of forming a structure for testing a field-effect transistor or Kelvin field-effect transistor. The structure includes a test pad, a device-under-testing having one or more source/drain regions, and a metallization level arranged over the device-under-testing. The metallization level includes one or more interconnect lines that are connected with the test pad. One or more contacts, which are arranged between the metallization level and the device-under-testing, directly connect the one or more interconnect lines with the one or more source/drain regions.

Abstract: Provided is a semiconductor device, a measurement device, a measurement method, and a semiconductor system that enable accurate measurement of the plasma induced damage (PID) effect on a small scale. The semiconductor device includes an NMOSFET whose gate is connected to an antenna part that functions as an antenna in a plasma process and a PMOSFET that controls the connection between the NMOSFET and a ring oscillator. The semiconductor device is provided with a test element group (TEG) that includes an NMOSFET whose gate is connected to an antenna part that functions as an antenna in a plasma process and a PMOSFET that controls the connection between the NMOSFET and a ring oscillator.

Abstract: Disclosed herein may be an apparatus and method for detecting ion migration. The apparatus may include: a first printed circuit board (PCB) pad coupled with a ground; a second PCB pad disposed at a position spaced apart from the first PCB pad; a power supply unit configured to supply power to the second PCB pad; a voltage detection unit configured to detect a voltage of an output terminal of the first PCB pad; and a control unit configured to determine whether ion migration has occurred between the first PCB pad and the second PCB pad using the voltage detected by the voltage detection unit.

Abstract: An IC includes a contiguous standard cell area with first, second, and third TS-GATE-short-configured test area geometries disposed therein. In some embodiments, the contiguous standard cell area may further include: fourth and fifth TS-GATE-short-configured test area geometries, and/or other test area geometries, such as tip-to-tip-short, tip-to-side-short, diagonal-short, corner-short, interlayer-overlap-short, via-chamfer-short, merged-via-short, snake-open, stitch-open, via-open, or metal-island-open.

Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

Abstract: Provided is an apparatus for generating digital values to provide a random digital value. The apparatus may generate the digital value based on a semiconductor process variation. The apparatus may include a generating unit to generate a plurality of digital values, based on the semiconductor process variation, and a processing unit to process the digital values and to provide a first digital value. The generating unit may include a plurality of physically unclonable functions (PUFs). A parameter may be differently applied to the PUFs, and the PUFs may generate the digital values.

Abstract: An example apparatus includes a semiconductor wafer with a plurality of probe pads each formed centered in scribe streets and intersected by saw kerf lanes. Each probe pad includes a plurality of lower level conductor layers arranged in lower level conductor frames, a plurality of lower level vias extending vertically through lower level insulator layers and electrically coupling the lower level conductor frames; a plurality of upper level conductor layers, each forming two portions on two outer edges of the probe pad, the two portions aligned with, spaced from, and on opposite sides of the saw kerf lane, the coverage of the upper level conductor layers being less than about twenty percent; and a plurality of upper level vias extending vertically through upper level insulator layers and coupling the upper level conductor layers electrically to one another and to the lower level conductor layers. Methods are disclosed.

Abstract: A base substrate include a first substrate (110) having a first principal surface (110a) and a second principal surface (110b), and a first wiring member placed over the first or second principal surface. A pixel substrate includes a second substrate (201) having a third principal surface (201a) and a fourth principal surface (201b), a plurality of light-emitting elements (202) mounted over the third principal surface, a driver IC (205) mounted over the third principal surface, an external connection terminal mounted over the third principal surface, and a second wiring member (206) placed on the third or fourth principal surface. The driver IC drives the plurality of light-emitting elements. The external connection terminal receives an input signal that is supplied from outside the pixel substrate. The second substrate (201) is disposed to be stacked on top of the first substrate (110) so that the first principal surface and the fourth principal surface face each other.

Abstract: Disclosed is a multi-chip module (MCM) with redundant chip-to-chip communication connection(s) to minimize the need to discard a chip-mounting layer due to defective signal traces. The MCM includes at least first and second chips mounted on the chip-mounting layer. The chip-mounting layer includes signal traces that are electrically connected between first and second links on the first and second chips, respectively, to form communication connections including at least one redundant communication connection. Instead of being directly connected to the chip-to-chip communication connections, first and second interfaces on the first and second chips are connected via first and second multiplexors, respectively, to selected ones of multiple chip-to-chip communication connections. By employing the multiplexors and the redundant chip-to-chip communication connection(s), chip-to-chip communication connection(s) with defective signal trace(s) can be bypassed.

Abstract: A method of micro-transfer printing comprises providing a component source wafer and components disposed in, on, or over the component source wafer. A destination substrate and a stamp for transferring the components from the component source wafer to the destination substrate is provided. The component source wafer has an attribute or structure that varies across the component source wafer that affects the structure, operation, appearance, or performance of the components. A first array of components is transferred from the component source wafer to the destination substrate with a first orientation. A second array of components is transferred from the component source wafer to the destination substrate with a second orientation different from the first orientation. Components can be transferred by micro-transfer printing and different orientations can be a different rotation, overlap, interlacing, or offset.

Abstract: A testing architecture for integrated circuits on a wafer includes at least one first circuit of a structure test element group (TEG) realized in a scribe line providing separation between first and second integrated circuits. At least one pad is shared by a second circuit inside at least one of the first and second integrated circuits and the first circuit. Switching circuitry is coupled to the at least one pad and to the first and second circuits.

Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

Abstract: A method of manufacturing a semiconductor structure includes forming a redistribution layer (RDL); forming a conductive member over the RDL; performing a first electrical test through the conductive member; disposing a first die over the RDL; performing a second electrical test through the conductive member; and disposing a second die over the first die and the conductive member.

Abstract: An electrical device includes a substrate orientated parallel to a first plane and a first integrated circuit die disposed above the substrate. The first integrated circuit die includes pads that are electrically coupled to at least some of the pads at the top surface of the substrate. The electrical device has a packaging material disposed above the first integrated circuit die. The electrical device includes one or more test pads that are orientated parallel to the first plane and disposed above the first integrated circuit die in the vertical direction. The one or more test pads are electrically coupled to the first integrated circuit die and encased within the packaging material such that the one or more test pads are not exposed external to the electrical device.

Abstract: A method may include, but is not limited to, receiving a measurement including a metrology parameter for a layer of a metrology target and an alignment mark from an overlay metrology tool prior to a lithography process; deriving a merit figure from the metrology parameter and the alignment mark; deriving a correction factor from the merit figure; providing the correction factor to the lithography process via a feed forward process; receiving an additional measurement including an additional metrology parameter for the layer and an additional layer from an additional overlay metrology tool after the lithography process; deriving an adjustment from the additional metrology parameter; and providing the adjustment to the lithography process via a feedback process.

Abstract: A method for manufacturing an integrated circuit (IC) device. A first IC wafer is diced to obtain a first superdie including a plurality of first die. A second IC wafer is diced to obtain a second superdie including a plurality of second die. The first superdie and the second superdie are placed on an interposer substrate to form at least part of a composite IC wafer, wherein each of the first die is aligned with a respective one of the second die in the composite IC wafer. The composite IC wafer is diced to obtain a plurality of IC devices, where each of the IC devices includes a respective one of the first die and the second die with which it is aligned.

Abstract: A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.

Abstract: A semiconductor device includes: a plurality of semiconductor switching elements that are a plurality of MOSFETs each including a Schottky barrier diode; a first ohmic electrode disposed above a first region of a well region and electrically connected to the first region, the first region being on the opposite side from a predefined region; a first Schottky electrode disposed on a semiconductor layer exposed at the first region of the well region; and a line electrically connected to the first ohmic electrode, the first Schottky electrode, and a source electrode. The device enables reduction of a breakdown in a gate insulating film.

Abstract: The present disclosure provides a TFT array substrate and an OLED display panel. The TFT array substrate includes a display area, a non-display area around the display area, a COF bonding area and a test area. The COF bonding area and the test area are arranged in the non-display area. The test area includes several test pads spaced apart. According to the present disclosure, the test pads are arranged on the TFT array substrate. Thus, during testing, it is not necessary to cut off the connection wire between the test pads and the TFT array substrate. Therefore, the problem of uncovered metal residue after the cut-off of the connection wire may be avoided. Moreover, when the test of the TFT array substrate is finished, the test pads will be covered by insulating material such that the problem of uncovered metal residue of the test pads can be avoided.

Abstract: A device includes a leadframe having a diepad and leads, a compound semiconductor chip arranged over a first surface of the diepad and including gate, source electrode and drain electrodes, and an encapsulation material covering the compound semiconductor chip and diepad. A second surface of the diepad opposite the first surface is exposed from the encapsulation material. The device also includes a first lead of the leadframe electrically coupled to the gate electrode, a second lead of the leadframe electrically coupled to the source electrode, a third lead of the leadframe electrically coupled to the source electrode, and a fourth lead of the leadframe electrically coupled to the drain electrode. The third lead is configured to provide a sensing signal representing an electrical potential of the source electrode to a gate driver circuit. The gate driver circuit is configured to drive the gate electrode based on the sensing signal.

Abstract: Semiconductor devices having through-stack interconnects for facilitating connectivity testing, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a stack of semiconductor dies and a plurality of through-stack interconnects extending through the stack to electrically couple the semiconductor dies. The interconnects include functional interconnects and at least one test interconnect. The test interconnect is positioned in a portion of the stack more prone to connectivity defects than the functional interconnects. Accordingly, testing the connectivity of the test interconnect can provide an indication of the connectivity of the functional interconnects.

Abstract: A package and a method of forming the same are provided. A method includes forming a first die structure. The first die structure includes a die stack and a stacked dummy structure bonded to a carrier. A second die structure is formed. The second die structure includes a first integrated circuit die. The first die structure is bonded to the second die structure by bonding a topmost integrated circuit die of the die stack to the first integrated circuit die. The topmost integrated circuit die of the die stack is a farthest integrated circuit die of the die stack from the carrier. A singulation process is performed on the first die structure to form a plurality of individual die structures. The singulation process singulates the stacked dummy structure into a plurality of individual stacked dummy structures.

Abstract: An electronic chip including a plurality of buried doped bars and a circuit for detecting an anomaly of an electric characteristic of the bars.

Abstract: Embodiments of structures and methods for testing three-dimensional (3D) memory devices are disclosed. In one example, a 3D memory device includes a memory array structure, a peripheral device structure, and an interconnect layer in contact with a front side of the memory array structure and a front side of the peripheral device structure, and a conductive pad at a back side of the memory array structure and that overlaps the memory array structure. The memory array structure includes a memory array stack, a through array contact (TAC) extending vertically through at least part of the memory array stack, and a memory array contact. The peripheral device structure includes a test circuit. The interconnect layer includes an interconnect structure. The conductive pad, the TAC, the interconnect structure, and at least one of the test circuit and the memory array contact are electrically connected.

Abstract: A chip intermediate body includes a semiconductor region including plural chip areas. The chip areas respectively are cut out as semiconductor chips. A cut region is provided along edges of the chip areas, the cut region being cut to cut out the semiconductor chips. A contact region is provided opposite to the chip areas across the cut region, the contact region being configured to be contacted by a probe of a test unit to test the chip areas, and electric wiring is provided continuously with the cut region to connect the chip areas and the contact region.

Abstract: A first circuit layer including a first semiconductor substrate with photoelectric conversion unit that photoelectrically converts incident light and generates charge, and a first wiring layer with wiring that reads out signal based upon charge generated by the photoelectric conversion unit; second circuit layer including a second wiring layer with wiring connected to the wiring of the first wiring layer, and a second semiconductor substrate with a through electrode connected to the wiring of the second wiring layer; third circuit layer including a third semiconductor substrate with a through electrode connected to the through electrode of the second circuit layer, and third wiring layer with wiring connected to the through electrode of the third semiconductor substrate; and a fourth circuit layer including a fourth wiring layer with wiring connected to the wiring of the third wiring layer, and fourth semiconductor substrate connected to the wiring of the fourth wiring layer.

Abstract: Apparatuses including test segment circuits and methods for testing the same are disclosed. An example apparatus includes a plurality of segment lines configured to form a ring around a die and a plurality of test segment circuits, each test segment circuit coupled to at least two segment lines of the plurality of segment lines. Each test segment circuit is coupled to a portion of a first signal line, a portion of a second signal line, and a portion of a third signal line and each test segment circuit is configured to control an operation performed on at least one segment line of the plurality of segment lines.

Abstract: A manufacturing method of a light-emitting device including the following steps is provided. A test trace and a first signal trace are formed on a first substrate. A light-emitting element electrically connected to the test trace and the first signal trace is formed. A test procedure is performed on the light-emitting element via the test trace and the first signal trace. An encapsulation layer is formed on the first substrate to cover the light-emitting element. The test trace is removed, and then a driving unit electrically connected to light-emitting element is formed.

Abstract: An apparatus and method for testing two-terminal memory elements organized as a cross-point memory array. The apparatus allows functional testing of two-terminal memory elements organized as a cross-point memory array, and built in a short flow manufacturing process. The proposed apparatus substantially eliminates the use of any type of additional active or passive switches, selectors, or decoders. A large number of memory elements of various memory types including planar (two dimensional) or three dimensional memory structures can be tested without the need of manufacturing selectors or running the full flow process.

Abstract: A scribe line structure including a semiconductor substrate, a pad and a first patterned metal layer is provided. The semiconductor substrate has a die region, a die sealing region located outside the die region and a dicing region located outside the die sealing region. The pad is disposed in the dicing region. The first patterned metal layer is disposed in the dicing region, right below and connected to the pad, wherein the first patterned metal layer has a plurality of first patterns directly connected to each other.

Abstract: A flexible display device can include a flexible substrate including a display area including a plurality of pixels, a first non-display area extended from the display area, a bending area extended from the first non-display area, a second non-display area extended from the bending area, and a pad area extended from the second non-display area and including a plurality of pads; a plurality of data lines configured to transmit a data voltage to the plurality of pixels; a plurality of link lines extending through the first non-display area, the bending area, the second non-display area, and the pad area to connect the plurality of data lines with the plurality of pads; and a plurality of inspection transistors arranged in the pad area, each of the plurality of inspection transistors including a first electrode connected to one of the plurality of link lines.

Abstract: A semiconductor device which includes a substrate having integrated circuits; and metallization layers on the substrate, the metallization layers having a peripheral region adjacent to a kerf region of the semiconductor device and containing a crack stop structure. The crack stop structure includes a bottom portion containing a plurality of the metallization layers connected by vias with each metallization layer decreasing in width in a step pyramid structure from a bottom of the bottom portion to a top of the bottom portion; and a top portion containing a top metallization layer of the metallization layers connected to the bottom portion, the top metallization layer being wider than a top-most metallization layer of the bottom portion and having a segment that extends toward the kerf region so as to create an overhang with respect to the bottom portion.