Abstract: The present disclosure provides a sense amplification structure and a memory architecture. The sense amplification structure includes: a first PMOS transistor provided with a gate connected to a second readout bit line and a source connected to a first signal terminal; a first NMOS transistor provided with a gate connected to an initial bit line; a drain of the first PMOS transistor and a drain of the first NMOS transistor being connected to a first complementary readout bit line; a second PMOS transistor provided with a gate connected to the second complementary readout bit line; a second NMOS transistor provided with a gate connected to an initial complementary bit line and a source connected to a second signal terminal; a drain of the second PMOS transistor and a drain of the second NMOS transistor being connected to the first readout bit line.

Abstract: Aspects of the present disclosure provides a device comprising a P-type semiconductor substrate, an N-type tub above the semiconductor substrate, a P-type region provided in the N-type tub isolated by one or more P-type isolation structures, and an N-type punch-through stopper provided under the P-type regions isolated by the isolation structure(s). The punch-through stopper is heavily doped compared to the N-type tub. The P-type region has a width between the two isolation structures that is equal to or less than that of the N-type punch-through stopper.

Abstract: A method comprises forming shallow trenches in an intrinsic base semiconductor layer and forming a first base layer thereon; applying a first mask to the layer; etching the first base layer; forming a second base layer on the intrinsic base semiconductor layer adjacent the first base layer; removing the first mask; applying a second mask to the base layers; simultaneously etching the layers to produce extrinsic bases of reduced cross dimensions; disposing spacers on the extrinsic bases; etching around the bases leaving the intrinsic base semiconductor layer under the bases and spacers; implanting ions into sides of the intrinsic base semiconductor layer under the first extrinsic base to form a first emitter/collector junction and into sides of the intrinsic base semiconductor layer under the second extrinsic base to form a second emitter/collector junction; depositing semiconductor material adjacent to the junctions and the trenches; and removing the applied second mask.

Abstract: A semiconductor device in which size reduction is possible without functional devices below pads being damaged by stress. The semiconductor device has a plurality of pads above a semiconductor substrate as terminals for external connection. A plurality of dual use pads which are used in both a probing test and assembly are provided in a first area above a main surface of the semiconductor substrate, an application of pressure by a probe during the probing test being permitted in the first area, and a plurality of assembly pads which are not used in the probing test are provided in a second area above the main surface of the semiconductor substrate, the application of pressure by the probe during the probing test being not permitted in the second area.

Abstract: In one embodiment of the present invention, a semiconductor device has a photodiode over a P-type substrate, an NPN transistor formed over the P-type substrate, an N+-type buried region provided right under the NPN transistor as being buried in the P-type substrate, and a P+-type buried region formed in the N+-type buried region.

Abstract: A mixed signal integrated circuit includes a digital logic array and an analog cell array. Each cell of the analog cell array shares a common architecture and is fully programmable. An analog cell includes mirror NFETs, cascode NFETs, differential pair NFETs, differential pair PFETs, cascode PFETs and mirror PFETs. An analog cell may also include special purpose components, such as low value resistors, high value resistors and PFETs.

Abstract: A method for forming a high-voltage drain metal-oxide-semiconductor (HVD-MOS) device includes providing a semiconductor substrate; forming a well region of a first conductivity type; and forming an embedded well region in the semiconductor substrate and only on a drain side of the HVD-MOS device, wherein the embedded region is of a second conductivity type opposite the first conductivity type. The step of forming the embedded well region includes simultaneously doping the embedded well region and a well region of a core regular MOS device, and simultaneously doping the embedded well region and a well region of an I/O regular MOS device, wherein the core and I/O regular MOS devices are of the first conductivity type. The method further includes forming a gate stack extending from over the embedded well region to over the well region.

Abstract: Disclosed is a method for manufacturing a semiconductor device including a low-voltage MOS transistor and a high-voltage MOS transistor.

Abstract: Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

Abstract: For the integration of an npn bipolar transistor with a hetero bipolar transistor, a placeholder layer is generated in a base region of the hetero bipolar transistor after structuring a collector structure for both types of transistors, wherein the placeholder layer is not present in a base region of the bipolar transistor. After generating the base of the bipolar transistor, the base of the bipolar transistor is covered, whereupon the placeholder layer is removed and the base of the hetero bipolar transistor is generated in the places where the placeholder layer has been removed. The emitter structure is again generated equally for both types of transistors so that an integrated circuit results which includes bipolar transistors and hetero bipolar transistors whose collector structures and/or whose emitter structures consist of identical production layers. Thus, space-saving and cost-effective integrated circuits may be produced benefiting from the advantages of both types of transistors.

Abstract: This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up HBT, reduction in base-collector junction capacity. For the collector-up HBT, window structures around the sidewalls of a collector are used to etch either the emitter layer disposed directly under the external base layer, or an emitter contact layer For the emitter-up HBT, window structures around the sidewalls of an emitter are used to etch either the collector layer disposed directly under the external base layer, or a collector contact layer. In both HBTs, the external base layer is supported by a columnar structure to ensure mechanical strength.

Abstract: The invention includes BIFETRAM devices. Such devices comprise a bipolar transistor in combination with a field effect transistor (FET) in a three-dimensional stacked configuration. The memory devices can be incorporated within semiconductor-on-insulator (SOI) constructions. The base region of the bipolar device can be physically and electrically connected to one of the source/drain regions of the FET to act as a storage node for the memory cell. The semiconductor material of the SOI constructions can comprise Si/Ge, and the active region of the FET can extend into the Si/Ge. The SOI constructions can be formed over any of a number of substrates, including, for example, semiconductive materials, glass, aluminum oxide, silicon dioxide, metals and/or plastics.

Abstract: In a semiconductor device comprising a first bipolar transistor and a second bipolar transistor having different voltages formed on a semiconductor substrate made by forming an epitaxial layer on a silicon substrate, in an upper part of the silicon substrate the first bipolar transistor has an N+-type first embedded diffusion layer having an impurity concentration higher than that of the epitaxial layer and the second bipolar transistor has an N-type second embedded diffusion layer having a lower impurity concentration and a deeper diffusion layer depth than the first embedded diffusion layer, whereby a high speed bipolar transistor and a high voltage bipolar transistor are formed on the same substrate.

Abstract: In a NPN transistor electrostatic discharge (ESD) protection structure, certain parameters, including maximum lattice temperature, are improved by introducing certain process changes to provide for SCR-like characteristics during ESD events. A p+region is formed adjacent the collector to define a SCR-like emitter and with a common contact with the collector of the BJT. The p+ region is spaced from the n-emitter of the transistor by a n-epitaxial region, and the collector is preferably spaced further from the n-emitter than is the case in a regular BJT.

Abstract: A logic apparatus having first and second single-electron devices connected serially or in parallel. Each of the single-electron devices includes a conductive island insulatively disposed between two tunnel barriers, which separate the conductive island from respective source/drain electrodes. A first charge storage region is insulatively disposed over and under the conductive island and a gate electrode, respectively. When charges are accumulated in the charge storage region, a Coulomb oscillation of the respective device is shifted by a half-period from the Coulomb oscillation that results when no charge has accumulated therein.

Abstract: A base of a low breakdown voltage npn bipolar transistor has p+ diffusion layers. A field insulating layer is formed on the p+ diffusion layer located between the p+ diffusion layer and an emitter, while the p+ diffusion layer encloses the surface of the emitter and has a window part immediately under the emitter. Thus, a semiconductor device and a method of fabricating the same capable of suppressing dispersion of a current amplification factor hFE in a wafer plane of the low breakdown voltage transistor and fabricating the low breakdown voltage transistor and a high breakdown voltage transistor through simple steps are obtained.

Abstract: The present invention provides a semiconductor integrated circuit capable of reducing the influence of an offset voltage when amplifying and outputting a voltage in accordance with a voltage difference between first and second signal lines.

Abstract: A semiconductor integrated circuit device comprises an n-type well 8-1 formed in a p-type silicon substrate 1, an n-type well 8-2 formed so as to surround a part of the substrate 1, in which a p−-type well is formed, a p−-type well 15-1 formed in the substrate 1, a p−-type well 15-2 formed in a part of the substrate 1, which is surrounded by the n-type well, an embedded n-type well 12-1 formed below the p−-type well 15-1, and an n-type well 12-2 which is formed below the p−-type well 15-2 and which is connected to the n-type well 8-2. Thus, it is possible to provide a semiconductor integrated circuit device capable of suppressing the increase of the number of photolithography steps and reducing the manufacturing costs.

Abstract: A circuit configuration for providing a capacitance includes short-channel MOS transistors that are reverse-connected in series or in parallel, and that have the same channel type. When the short-channel MOS transistors are operated exclusively in the depletion mode in the required voltage range, the useful capacitance is increased, because of intrinsic capacitances, as compared with circuit configurations having conventional long-channel MOS transistors. These circuits greatly reduce the area taken up and reduce the costs.

Abstract: A logic apparatus comprises a first single-electron device formed of a first conductive island, two first tunnel barriers with the first conductive island interposed, first and second electrodes, and a first charge storage region, and a second single-electron device formed of a second conductive island, second tunnel barriers with the second island interposed, third and fourth electrodes, and a second charge storage region, the first electrode of the first single-electron device being connected to the third electrode of the second single-electron device being connected to each other.

Abstract: The integrated circuit is provided with capacitors for smoothing the supply voltage. The capacitors are disposed below the supply interconnects which supply the integrated circuit with the supply voltage. This enables the integrated circuit to be accommodated on a minimal area.

Abstract: An integrated device comprises a high-voltage transistor and a low-voltage transistor in an emitter-switching configuration integrated in a chip (400) of semiconductor material comprising a buried P-type region (120) and a corresponding P-type contact region (405) which delimit a portion of semiconductor material within which the low-voltage transistor is formed. The contact region (405) has a network structure such as to divide this portion of semiconductor material into a plurality of cells (410) within each of which there is an elemental P-type base region (425) and an elemental N-type emitter region (430) of the low-voltage transistor. The elemental regions (425) and (430) of the various cells (410) are electrically connected to one another by means of surface metal contacts.

Abstract: An n.sup.- -type silicon active layer having a thickness of 6 .mu.m or less is formed on a silicon substrate via a silicon oxide film. An npn bipolar transistor with a low withstand voltage and an IGBT with a high withstand voltage are formed in the active layer. The two devices are insulated and isolated from each other through a trench. The bipolar transistor has an n-type well layer formed in the surface of the active layer. A p-type well layer is formed in the surface of the n-type well layer. The thickness of the n-type well layer under the p-type well layer is set to be 1 .mu.m or more. A first n.sup.+ -type diffusion layer is formed in the surface of the n-type well layer. A p.sup.+ -type diffusion layer and a second n.sup.+ -type diffusion layer are formed in the surface of the p-type well layer. The n-type well layer and the first n.sup.+ -type diffusion layer serve as a collector region. The p-type well layer and the p.sup.+ -type diffusion layer serve as a base region. The second n.sup.

Abstract: In a semiconductor device comprising a first bipolar transistor and a second bipolar transistor having different voltages formed on a semiconductor substrate made by forming an epitaxial layer on a silicon substrate, in an upper part of the silicon substrate the first bipolar transistor has an N.sup.+ -type first embedded diffusion layer having an impurity concentration higher than that of the epitaxial layer and the second bipolar transistor has an N-type second embedded diffusion layer having a lower impurity concentration and a deeper diffusion layer depth than the first embedded diffusion layer, whereby a high speed bipolar transistor and a high voltage bipolar transistor are formed on the same substrate.

Abstract: A semiconductor device includes a power transistor group and a signal circuit on the same substrate. The substrate is grounded at an isolation region at an end of the substrate adjacent to the power transistor group so that the grounded portion of the substrate is distant from the signal circuit.

Abstract: An n.sup.- -type silicon active layer having a thickness of 6 .mu.m or less is formed on a silicon substrate via a silicon oxide film. An npn bipolar transistor with a low withstand voltage and an IGBT with a high withstand voltage are formed in the active layer. The two devices are insulated and isolated from each other through a trench. The bipolar transistor has an n-type well layer formed in the surface of the active layer. A p-type well layer is formed in the surface of the n-type well layer. The thickness of the n-type well layer under the p-type well layer is set to be 1 .mu.m or more. A first n.sup.+ -type diffusion layer is formed in the surface of the n-type well layer. A p.sup.+ -type diffusion layer and a second n.sup.+ -type diffusion layer are formed in the surface of the p-type well layer. The n-type well layer and the first n.sup.+ -type diffusion layer serve as a collector region. The p-type well layer and the p.sup.+ -type diffusion layer serve as a base region. The second n.sup.

Abstract: An integrated circuit including a semiconductor substrate, a semiconductor layer formed on the substrate, a desired bipolar transistor formed in the semiconductor layer. First and second parasitic elements are formed in the integrated circuit. An element is provided which detects when the second parasitic element becomes active or which prevents increase of the collector-to-emitter voltage of the desired bipolar transistor in response to current flowing through the second parasitic transistor. This element may be a semiconductor region formed in the semiconductor layer. The transistor may be an npn or pnp type transistor manufactured according to a complementary bipolar process or other process which results in a transistor with first and second parasitic elements. The present invention is also well-suited for use in the output stage of an operational amplifier.

Abstract: A BiCMOS semiconductor device includes a pair of p-channel and n-channel MOS field effect transistors, a hetero-junction bipolar transistor including an epitaxial base layer made of a first compound semiconductor, and a homo-junction bipolar transistor including a base layer made of a second semiconductor. The hetero-junction bipolar transistor is operated in a low collector current region less than a critical collector current value at which the hetero-junction bipolar transistor has the maximum value of a cutoff frequency thereof. The homo-junction bipolar transistor is operated in a high collector current region more than a critical collector current value at which the homo-junction bipolar transistor has the maximum value of a cutoff frequency thereof.

Abstract: A transistor built on a substrate employs two collectors, an output collector and a secondary collector. The purpose of the secondary collector is to collect minority carriers at saturation and feed these minority carriers back to the input reference of a current mirror. This saturation current causes a decrease in the current through the input reference transistor and decreases the current in the output of the current mirror responsively, driving it away from saturation.

Abstract: A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partially superimposed on each other, partly in a first epitaxial layer and partly in a second epitaxial layer, and the low voltage bipolar transistor is situated above the emitter region of the bipolar power transistor which is thus a completely buried active structure. In a version with isolated components, there are two P+ regions in an N- epitaxial layer. The first P+ region constitutes the power transistor base and encloses the N+ emitter region of the power transistor. The second P+ region encloses two N+ regions and one P+ region, constituting the collector, emitter, and base regions respectively of the low voltage transistor.

Abstract: A process is disclosed which simultaneously forms high quality complementary bipolar transistors, relatively high voltage CMOS transistors, relatively low voltage CMOS transistors, DMOS transistors, zener diodes and thin-film resistors, or any desired combination of these, all on the same integrated circuit chip. The process uses a small number of masking steps, forms high performance transistor structures, and results in a high yield of functioning die. Isolation structures, bipolar transistor structures, CMOS transistor structures, DMOS transistor structures, zener diode structures, and thin-film resistor structures are also disclosed.

Abstract: A bias structure for an integrated circuit including first and second transistors having emitter terminals coupled respectively to the supply and to a terminal of a resistor whose potential, under certain operating conditions of the circuit, exceeds the supply voltage; base terminals connected to each other and to a current source; and collector terminals connected electrically (12) to an epitaxial tub housing the resistor. A resistor is preferably provided between the two collectors, so that, when the potential of the terminal of the resistor exceeds the supply voltage, the second transistor saturates and maintains the epitaxial tub of the resistor at a potential close to that of the resistor terminal, thus preventing the parasitic diode formed between the resistor and the epitaxial tub from being switched on.