Abstract: Apparatuses for providing a clock signal for a semiconductor device are described. An example apparatus includes a chip including a first clock tree and a second clock tree. The first clock tree includes a first wiring segment extending in a first direction and a second wiring segment extending in a second direction perpendicular to the first direction and coupled the first wiring segment. The second clock tree includes a third wiring segment extending in the second direction, a fourth wiring segment extending in the first direction and coupled to the third wiring segment, and a fifth wiring segment extending in the second direction and coupled to the fourth wiring segment.

Abstract: The present invention provides a semiconductor structure and a method of fabricating the same. The method includes: providing a chip having conductive pads, forming a metal layer on the conductive pads, forming a passivation layer on a portion of the metal layer, and forming conductive pillars on the metal layer. Since the metal layer is protected by the passivation layer, the undercut problem is solved, the supporting strength of the conductive pillars is increased, and the product reliability is improved.

Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

Abstract: The present disclosure is directed to a leadframe package having a side solder ball contact and methods of manufacturing the same. A plurality of solder balls are coupled to recesses in a leadframe before encapsulation and singulation. After singulation, a portion of each solder ball is exposed on sidewalls of the package. This ensures that the sidewalls of the leads are solder wettable, which allows for the formation of stronger joints when the package is coupled to a substrate. This increased adhesion reduces resistance at the joints and also mitigates the effects of expansion of the components in the package such that delamination is less likely to occur. As a result, packages with a side solder ball contact have increased life cycle expectancies.

Abstract: A semiconductor device package includes a substrate, a first patterned conductive layer, a second patterned conductive layer, a dielectric layer, a third patterned conductive layer and a connector. The substrate has a top surface. The first patterned conductive layer is on the top surface of the substrate. The second patterned conductive layer contacts the first patterned conductive layer. The second patterned conductive layer includes a first portion, a second portion and a third portion. The second portion is connected between the first portion and the third portion. The dielectric layer is on the top surface of the substrate. The dielectric layer covers the first patterned conductive layer and surrounds the second portion and the third portion of the second patterned conductive layer. The first portion of the second patterned conductive layer is disposed on the dielectric layer.

Abstract: A semiconductor device includes a plurality of first signal lines and a plurality of second signal lines which are alternately arranged adjacent to each other, wherein the first signal lines and the second signal lines comprise a plurality of main signal lines and at least one spare signal line, a first signal transmitter suitable for transmitting signals through the main signal lines of the first signal lines, and shifting a signal transmission path to adjacent signal lines among the main signal lines and the spare signal line of the first signal lines, based on repair information, and a second signal transmitter suitable for transmitting signals through the main signal lines of the second signal lines, and shifting a signal transmission path to adjacent signal lines among the main signal lines and the spare signal line of the second signal lines, based on the repair information.

Abstract: According to one embodiment, there is provided a memory device which includes a plurality of elements that include three-dimensionally arranged memory cells, a transistor that is electrically connected to at least one of the plurality of elements, an inspection pad that is connected in series to at least one of the plurality of elements through the transistor, and a wiring that is electrically connected to the inspection pad and a gate of the transistor and capable of supplying a common potential to both the inspection pad and the transistor for turning the transistor to an OFF state.

Abstract: Some embodiments relate to a bond pad structure of an integrated circuit (IC). The bond structure includes a bond pad and an intervening metal layer positioned below the bond pad. The intervening metal layer has a first face and a second face. A first via layer is in contact with the first face of intervening metal layer. The first via layer has a first via pattern. The bond structure also includes a second via layer in contact with the second face of the intervening metal layer. The second via layer has a second via pattern that is different than first via pattern. The second via pattern includes a first group of elongated vias extending in parallel with one another in a first direction and a second group of vias in between the first group of elongated vias. The second group of vias extend in a second direction orthogonal to the first direction.

Abstract: A method for forming a 3D memory device is disclosed. The method includes: forming an first insulating layer on a substrate in a peripheral region, the first insulating layer having a slope near a boundary between the peripheral region and a core region of the substrate; forming an alternating conductive/dielectric stack on the substrate and the slope of the first insulating layer, a lateral portion of the alternating conductive/dielectric stack extending along a top surface of the substrate in the core region, and an inclined portion of the alternating conductive/dielectric stack extending along the slope of the first insulating layer; and forming a plurality of contacts to electrically contact a plurality of conductive layers in the inclined portion of the alternating conductive/dielectric stack.

Abstract: A die edge crack and delamination detection device includes a semiconductor device including an IC active area surrounded by at least one mechanical protection barrier (MPB); one or more metallization layers stacked on the IC active area; a plurality of passive electronic devices placed within the metallization layers at respective predetermined distances from the MPB; and a detection circuit having circuitry. The circuitry is configured to determine a specific metallization layer in which a crack or a delamination is encroaching from an edge of the semiconductor device, determine a lateral distance of a lead end of the crack or the delamination from the MPB, and determine a rate of approach of the crack or the delamination encroaching towards the MPB, via a nominal change in an electrical measurement of at least one of the passive electronic devices.

Abstract: The present disclosure relates to a semiconductor substrate structure, semiconductor package and method of manufacturing the same. The semiconductor substrate structure includes a conductive structure, a dielectric structure and a metal bump. The conductive structure has a first conductive surface and a second conductive surface. The dielectric structure has a first dielectric surface and a second dielectric surface. The first conductive surface does not protrude from the first dielectric surface. The second conductive surface is recessed from the second dielectric surface. The metal bump is disposed in a dielectric opening of the dielectric structure, and is physically and electrically connected to the second conductive surface. The metal bump has a concave surface.

Abstract: A MEMS resonator is equipped with a substrate, a moving structure suspended above the substrate in a horizontal plane formed by first and second axes, having first and second arms, parallel to one another and extending along the second axis, coupled at their respective ends by first and second transverse joining elements, forming an internal window. A first electrode structure is positioned outside the window and capacitively coupled to the moving structure. A second electrode structure is positioned inside the window. One of the first and second electrode structures causes an oscillatory movement of the flexing arms in opposite directions along the first horizontal axis at a resonance frequency, and the other electrode structure has a function of detecting the oscillation. A suspension structure has a suspension arm in the window. An attachment arrangement is coupled to the suspension element centrally in the window, near the second electrode structure.

Abstract: A method for manipulating ions contained in an encapsulation material for a semiconductor device is provided. The method includes processing the encapsulation material and applying an electric field to the encapsulation material before the encapsulation material is finally cured. The ions contained in the encapsulation material have a mobility that decreases as the encapsulation material cures. By applying the electric field to the encapsulation material before the encapsulation material is finally cured, the amount of ions contained in the encapsulation material is reduced and/or the ions contained are concentrated in one or more regions of the encapsulation material. Corresponding apparatuses and semiconductor packages manufactured by the method are also described.

Abstract: Provided is a differential wiring method for a high-speed printed circuit board, including the following steps: setting a pre-set impedance required value Z2 of a non-ball grid array (BGA) region, determining the width w2 of the second differential wire and the distance d2 between the two second differential wires according to the pre-set impedance required value Z2; calculating the width w1 of the first differential wire and the distance d1 between the two first differential wires, according to the distance s1 between two adjacent rows of bonding pads in a BGA region bonding pad array and the minimum processable distance s2 between the bonding pad and the first differential wire, where w1 and d1 should satisfy 2w1+d1?s1?2s2, while further calculating w1 and d1 according to a differential characteristic impedance formula; arranging the two first differential wires disposed oppositely to each other in the BGA region according to the determined d1, and arranging the two second differential wires disposed opposi

Abstract: A fan-out semiconductor package includes: a semiconductor chip; an encapsulant encapsulating at least portions of the semiconductor chip; and a first connection member disposed on the semiconductor chip and including a first redistribution layer electrically connected to the connection pads and a second redistribution layer electrically connected to the connection pads and disposed on the first redistribution layer. The first redistribution layer includes a first pattern having a plurality of degassing holes, the second redistribution layer includes a second pattern having a first line portion having a first line width and a second line portion connected to the first line portion and having a second line width greater than the first line width, and the second line portion overlaps at least one of the plurality of degassing holes when being projected in a direction perpendicular to the active surface.

Abstract: A first semiconductor structure including a first bonding oxide layer having a first metallic bonding structure embedded therein and a second semiconductor structure including a second bonding oxide layer having a second metallic bonding structure embedded therein are provided. A nitride surface treatment process is performed to provide a nitrided surface layer to each structure. Each nitrided surface layer includes nitridized oxide regions located in an upper portion of the bonding oxide layer and nitridized metallic regions located in an upper portion of the metallic bonding structures. The nitrogen within the nitridized metallic regions is then removed to restore the upper portion of the metallic bonding structures to its original composition. Bonding is performed to form a dielectric bonding interface between the nitridized oxide regions present in the first and second structures, and a metallic bonding interface between the first and second metallic bonding structures.

Abstract: A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.

Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 ?m to about 0.2 ?m.

Abstract: A semiconductor element that has an element first main surface, an element second main surface that is the reverse surface from the element first main surface, and an element side surface. The semiconductor element is configured from a semiconductor substrate part and an insulating layer part and is provided with: a signal transmission/reception terminal that is provided to the element first main surface and that contacts and can transmit/receive signals to/from an external-substrate signal transmission/reception terminal that is provided to an external substrate that is external to the semiconductor element; and a signal transmission/reception coil that is provided to the element side surface and that, via the element side surface, can transmit/receive signals in a non-contact manner to/from an external-semiconductor-element signal transmission/reception part that is provided to an external semiconductor element that is external to the semiconductor element.

Abstract: An integrated circuit includes peripheral conductive pads interconnected by a peripheral conductive track within an integrated circuit chip. The integrated circuit chip further includes internal conductive pads interconnected by an internal conductive track within the integrated circuit chip. A conductive bonding wire external to the integrated circuit chip connects the one peripheral conductive pad to one internal conductive pad. A package encapsulates the integrated circuit chip and the conductive bonding wire.

Abstract: In some forms, an electronic assembly includes a substrate; and a ball pad mounted on the substrate, wherein the ball pad includes a plurality of lobes projecting distally from a center of the ball pad. In some forms, he electronic assembly includes a substrate; and a ball pad mounted on the substrate, wherein the ball pad includes a lobe projecting distally from a center of the ball pad. In some forms, the electronic assembly includes a substrate; and a ball pad mounted on the substrate, wherein the ball pad includes at least one lobe projecting distally from a center of the ball pad; and an electronic package that includes at least one conductor that electrically connects the ball pad on the substrate to the electronic package.

Abstract: In some embodiments, the present disclosure relates to a clock tree structure disposed on a semiconductor substrate. The clock tree structure includes a first clock line having a first line width and being arranged at a first height as measured from an upper surface of the semiconductor substrate. The clock tree structure also includes a second clock line having a second line width, which differs from the first line width. The second clock line is arranged at a second height as measured from the upper surface of the semiconductor substrate and the second height is equal to the first height. The first line width can be directly proportional to a first current level for the first clock line and the second line width can be directly proportional to a second current level for the second clock line.

Abstract: A three-dimensional semiconductor device includes a semiconductor substrate including a cell array region and a peripheral circuit region, an electrode structure including electrodes vertically stacked on the cell array region, a MOS capacitor on the peripheral circuit region, an interlayer dielectric layer covering the electrode structure and the MOS capacitor, first and second power lines spaced apart from each other in a first direction and extending in a second direction on the interlayer dielectric layer, first lower plugs connected to the first power line and a first terminal of the MOS capacitor, and second lower plugs connected to the second power line to a second terminal of the MOS capacitor. The second power line is on one of the first lower plugs that is adjacent to some of the second lower plugs in one of the first and second directions.

Abstract: Embodiments of a semiconductor device including a floating bond pad are disclosed. In one preferred embodiment, the semiconductor device is a power semiconductor device. In one embodiment, the semiconductor device includes a substrate that includes an active area and a control contact area, a first bond pad on the active area, a floating control bond pad on the control contact area and laterally extending over a portion of the first bond pad, and a dielectric between the portion of the first bond pad and the floating control bond pad. The floating control bond pad enables the active area to extend below the floating control bond pad, which in turn decreases a size of the power semiconductor device for a particular rated current or, conversely, increases a size of the active area and thus a rated current for a particular semiconductor die size.

Abstract: A semiconductor package includes a die pad; a plurality of external connection terminals located around the die pad; a semiconductor chip located on a top surface of the die pad and electrically connected with the plurality of external connection terminals; and a sealing member covering the die pad, the plurality of external connection terminals and the semiconductor chip and exposing an outer terminal of each of the plurality of external connection terminals. A side surface of the outer terminal of each of the plurality of external connection terminals includes a first area, and the first area is plated.

Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 ?m to about 0.2 ?m.

Abstract: A semiconductor memory device includes a substrate having a memory region and a peripheral region that are adjacent to each other, and a plurality of insulating layers and a plurality of wiring layers that are alternately formed on the memory region and the peripheral region of the substrate. On the memory region, the insulating layers and the wiring layers are alternately formed along a thickness direction of the memory device. On the peripheral region, first portions of the insulating layers and first portions of the wiring layers are alternately formed along the thickness direction and second portions of the insulating layers and second portions of the wiring layers are alternately formed along a lateral direction. A width of the second portion of each of the wiring layers in the lateral direction is greater than a thickness of the first portion of the wiring layer.

Abstract: An integrated circuit design tool includes a cell library. An entry in the cell library comprises a specification of the cell including a first transistor and a second transistor. The first transistor can include a first set of nanowires or 2D material strips arranged in parallel to form a channel structure, and a gate conductor disposed across the first set of nanowires or 2D material strips. The second transistor can include a second set of nanowires or 2D material strips arranged in parallel to form a channel structure, and a gate conductor disposed across the first set of nanowires or 2D material strips. The number of nanowires or 2D material strips in the first set can be different from the number of nanowires or 2D material strips in the second set, so that the drive power of the individual transistors can be set with finer granularity.

Abstract: A method for modifying metal portions of a layout data file associated with a self-aligned multiple patterning (SAMP) process. The method comprises receiving the layout data file that includes one or more active metal portions and layout information associated with an integrated circuit. The method also comprises converting the layout data file to further include mask information having at least a first set of trim features associated with one or more redundant metal portions and one or more active metal portions of the layout data file. The method also comprises determining the one or more redundant metal portions to be perforated. The method further comprises modifying the mask information to further include a second set of trim features for perforating the one or more redundant metal portions. The first set of trim features and the second set of trim features are associated with a trim mask of the SAMP process.

Abstract: A semiconductor device includes a contact region over a substrate. The semiconductor device further includes a metal pad over the contact region. Additionally, the semiconductor device includes a post passivation interconnect (PPI) line over the metal pad, where the PPI line is in contact with the metal pad. Furthermore, the semiconductor device includes an under-bump-metallurgy (UBM) layer over the PPI line. Moreover, the semiconductor device includes a plurality of solder balls over the UBM layer, the plurality of solder balls being arranged at some, but not all, intersections of a number of columns and rows of a ball pattern.

Abstract: An apparatus includes a radio-frequency (RF) path that includes an antenna tuner. The apparatus also includes calibration circuitry coupled to the antenna tuner. The calibration circuitry is configured to selectively isolate an antenna from a component of the RF path.

Abstract: A method for making a semiconductor device may include bonding a top lead frame component, having recesses, with a bottom lead frame component to form a lead frame, the top and bottom lead frame components each including metal. The method may include mounting an IC on the lead frame, encapsulating the IC and the lead frame, and removing portions of the bottom lead frame component to define contacts for the IC.

Abstract: A first semiconductor structure including a first bonding oxide layer having a first metallic bonding structure embedded therein and a second semiconductor structure including a second bonding oxide layer having a second metallic bonding structure embedded therein are provided. A nitride surface treatment process is performed to provide a nitrided surface layer to each structure. Each nitrided surface layer includes nitridized oxide regions located in an upper portion of the bonding oxide layer and nitridized metallic regions located in an upper portion of the metallic bonding structures. The nitrogen within the nitridized metallic regions is then removed to restore the upper portion of the metallic bonding structures to its original composition. Bonding is performed to form a dielectric bonding interface between the nitridized oxide regions present in the first and second structures, and a metallic bonding interface between the first and second metallic bonding structures.

Abstract: Embodiments of integrated circuit (IC) assemblies and related techniques are disclosed herein. For example, in some embodiments, an IC assembly may include a first printed circuit board (PCB) having a first face and an opposing second face; a die electrically coupled to the first face of the first PCB; a second PCB having a first face and an opposing second face, wherein the second face of the second PCB is coupled to the first face of the first PCB via one or more solder joints; and a molding compound. The molding compound may be in contact with the first face of the first PCB and the second face of the second PCB. Other embodiments may be disclosed and/or claimed.

Abstract: A detector system for a CT scanner is provided. The detector system may include a plurality of detector modules. Each of the detector modules may include a supporting frame, two or more detectors and an interface board. A supporting frame may be connected to a casing of the detector system. Detectors may be mounted onto a supporting frame and may convert an X-ray beam within a CT scanner into an electrical signal. An interface board may be disposed in an outer side of a supporting frame away from the focus of an X-ray tube, and may be electrically connected to a plurality of detectors through a connector, so as to provide a control signal and a power supply to the detectors, and to transmit a digital signal outputted by the detectors to a backplane of the detector system through an output line.

Abstract: A test probe structure having a planar surface and contact locations matched to test hardware is provided. The fabrication of the test probe structure addresses problems related to the possible deformation of base substrates during manufacture. Positional accuracy of contact locations and planarity of base substrates is achieved using dielectric layers, laser ablation, injection molded solder or redistribution layer wiring, and planarization techniques.

Abstract: A substrate pad for soldering at least one self-aligning component thereon, wherein at least one edge of a body of the substrate pad is shaped to conform to a corresponding edge of a component pad, and the at least one edge of the body of the substrate pad further include a plurality of pad fingers leading away from the substrate pad. Related apparatus and methods are also described.

Abstract: An integrated circuit (IC) comprises a first conductor in one layer of the IC, a second conductor in another layer of the IC, and a first metal plug connecting the first and second conductors. The IC further comprises an atomic source conductor (ASC) in the one layer of the IC and joined to the first conductor, and a second metal plug connecting the ASC to a voltage source of the IC. The first conductor and the ASC are configured to be biased to different voltages so as to establish an electron path from the second metal plug to the first metal plug such that the ASC acts as an active atomic source for the first conductor.

Abstract: Embodiments described herein relate to methods for etching a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment to implant ions into a spacer material, performing an etching process on an implanted region of the spacer material, and repeating the inert plasma treatment and the etching process to form a predominantly flat top spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as pressure, may be controlled to influence a desired spacer profile.

Abstract: The present invention provides a connection structure of conductors in which, when connecting a pair of conductors facing each other using an anisotropic conductive film containing conductive particles dispersed therein, a short circuit between the adjacent conductors due to a movement of conductive particles is be prevented, and a display apparatus having the connection structure of conductors. When executing thermo-compression bonding processing while interposing the anisotropic conductive film, even if conductive particles dispersed in the anisotropic conductive film are concentrated and continued in a gap between adjacent first terminals, in the vicinity of an edge of an interlayer insulation film, since a distance between the first terminals adjacent to each other is increased due to notches formed therein, the first terminals adjacent to each other are not short-circuited.

Abstract: A semiconductor device includes a semiconductor substrate and a plurality of metal layers above the semiconductor substrate. A first of the metal layers includes a plurality of first power rails which extend in a first direction and provide a first voltage, a plurality of second power rails which extend in the first direction and provide a second voltage, and a first conductor which is integral with one end of each of the first power rails and extends in a second direction. The first direction is perpendicular to the second direction. The first voltage is one of a ground voltage and a power source voltage and the second voltage is the other voltage.

Abstract: Some embodiments of the present disclosure provide a method of manufacturing a device. The method includes providing a carrier, the carrier including a top surface, covering a portion of the top surface with a plurality of active dies, disposing a protrudent band over a periphery of the carrier, wherein the protrudent band includes a rim shaped along the contour of the carrier, and forming a molding compound over the carrier to cover the plurality of active dies. A method for determining a width of the protrudent band of a device described herein is also provided.

Abstract: A method of fabricating a three dimensional integrated circuit comprises forming a redistribution layer on a first side of a packaging component, forming a holding chamber in the redistribution layer, attaching an integrated circuit die on the first side of the packaging component, wherein an interconnect bump of the integrated circuit die is inserted into the holding chamber, applying a reflow process to the integrated circuit die and the packaging component and forming an encapsulation layer on the packaging component.

Abstract: An electric apparatus may include a plurality of electric patterns arranged on a substrate. Each of the electric patterns may include a pad for connection with a solder ball, an electrical trace laterally extending from a portion of the pad to allow an electrical signal to be transmitted from or to the pad, a first dummy trace laterally extending from other portion of the pad, and a first connection line connecting the first dummy trace to the electrical trace. The first dummy trace may be provided at a position deviated from a straight line connecting the pad to the electrical trace.

Abstract: A chip package includes a chip, a laser stopper, an isolation layer, a redistribution layer, an insulating layer, and a conductive structure. The chip has a conductive pad, a first surface, and a second surface. The conductive pad is located on the first surface. The second surface has a first through hole to expose the conductive pad. The laser stopper is located on the conductive pad in the first through hole. The isolation layer is located on the second surface and in the first through hole. The isolation layer has a third surface opposite to the second surface, and has a second through hole to expose the laser stopper. The redistribution layer is located on the third surface, a sidewall of the second through hole, and the laser stopper in the second through hole. The conductive structure is located on the redistribution.

Abstract: Provided are a tape carrier package and a method of manufacturing the same, the method, including: forming through holes by performing a drill process using a laser to an insulating film of a flexible copper clad laminate (FCCL) film consisting of the insulating film and a copper layer; forming a circuit pattern layer by performing an etching process to the copper layer of the FCCL film; and selectively forming a plating layer on the circuit pattern layer. The method of manufacturing the tape carrier package according to the present invention is advantageous because a punching process, and processes for laminating and drying the copper layer which are necessary for the conventional method of manufacturing the tape carrier package can be omitted, a production cost of the tape carrier package is reduced, and the time required for the drying process is saved.

Abstract: A method of fabricating a semiconductor device includes: forming a metal layer containing Al; forming an insulating film on the metal layer; forming an opening pattern to the insulating film, the metal layer being exposed in the opening pattern; and forming a wiring layer in the opening pattern, a first portion being disposed between an edge of the wiring layer and an edge of the opening pattern, a width of the first portion being 1 ?m or less, and the metal layer being exposed in the first portion.

Abstract: Provided are semiconductor devices and methods of fabricating the same. In methods of forming the same, an etch stop pattern and a separate spacer can be formed on a sidewall of a bit line contact, wherein the etch stop pattern and the separate spacer each comprise material having an etch selectivity relative to an oxide. A storage node contact plug hole can be formed so that the etch stop pattern and the separate spacer form a portion of a sidewall of the storage node contact plug hole spaced apart from the bit line contact. The storage node contact plug hole can be cleaned to remove a natural oxide formed in the storage node contact plug hole. Related devices are also disclosed.

Abstract: A semiconductor device including a multiplicity of large current power elements with each power element divided into a multiplicity of divisional elements and arranged such that the power elements belonging to different power elements are arranged in a repetitive sequential order. The IC chip of the semiconductor device is formed to have output wires extending from the respective divisional elements connected to corresponding output pads without crossing other output wires. Arranged on the IC chip are output bumps in association with the respective output pads. A rewiring layer is provided having output coupling wires for connecting together the bumps that belong to the same power element and connecting them further to an external output electrode.

Abstract: A method of forming a bond pad structure is provided. The method includes forming a first conductive layer over a substrate and depositing a first dielectric layer over the first conductive layer. The first dielectric layer is patterned to form a contiguous planar path substantially parallel to a top surface of the substrate. Patterning the first dielectric layer includes defining a dielectric region of the first dielectric layer surrounded by a portion of the contiguous planar path, and forming a first via hole in the dielectric region. The contiguous planar path and the via hole are filled with a conductive material. The conductive material in the contiguous planar path forms a second conductive layer, and the contiguous planar path extends from a first lateral side wall of the second conductive layer to a second lateral sidewall of the second conductive layer. A bond pad is formed over the second conductive layer, and the bond pad is electrically connected to the second conductive layer.