Abstract: A cold end and a hot end are demarcated in a first thermoelectric semiconductor member. A first member made from metal or a semiconductor is connected to the cold end of the first thermoelectric semiconductor member. The first member is made from a material wherein, heat absorption occurs when first carriers comprising either electrons or holes are injected from the first member into the first thermoelectric semiconductor member. The first carriers transported to the hot end of the first thermoelectric semiconductor member are gathered into a light-emitting region. The light-emitting region is made from a semiconductor material. In this light-emitting region, light emission due to recombination between electrons and holes occurs.

Abstract: Current leads are used for connecting a power supply placed in a room-temature environment and a superconducting coil placed in an ultralow-temperature environment. The current leads includes a first current lead and a second current lead. The first current lead is made up of a room-temperature N-type thermoelectric semiconductor, a low-temperature N-type thermoelectric semiconductor, and a high-temperature superconductor. The second current lead is made up of a room-temperature P-type thermoelectric semiconductor, a low-temperature P-type thermoelectric semiconductor, and a high-temperature superconductor. At least one of the first and second current leads is formed of a functionally gradient material.

Abstract: A package (10, 60, 80) has a chamber (24) containing an integrated circuit (13) which detects infrared radiation. The package has on one side of the integrated circuit a portion (23) transparent to infrared radiation, and has on the opposite side of the integrated circuit a first part (12) which supports the integrated circuit. A second part (36) of the package is spaced from the first part (12) on the side thereof opposite from the integrated circuit. Thermoelectric cooling elements (51) are provided between and are thermally coupled to the first and second parts. Electrically conductive further elements (44) are also disposed between the first and second parts. A first arrangement (32, 29, 17, 18) electrically couples a terminal on the integrated circuit to a first end of the further element. A second arrangement (41, 38) electrically couples each further element to a respective pad (42) disposed on the side of the second part opposite from the first part.

Abstract: A solid state thermal switch providing thermal conductivity in an ON state and enhanced thermal isolation in an OFF state. The thermal switch is manufactured on a substrate by forming an oxide layer under a thin semiconducting layer. The thin semiconducting layer can be made from silicon or a silicon germanium lattice structure. The thin silicon layer is cracked by a neutron bombardment process. A drain and a source are then etched into the thin silicon layer. Cracks in the thin silicon layer disrupt quiescent thermal conductivity in the electron transport layer between the gate and source when the solid state thermal switch is in the OFF state. The thin semiconducting layer transports electrons and heat when the solid state thermal switch is in the ON state. The cracks created in the silicon layer provide thermal isolation from the drain to the source when the thermal switch is in an OFF state and allow heat conduction when the solid state thermal device is in the ON state.

Abstract: A diamond polycrystal body having metal films on its upper and lower surfaces is cut in the vertical direction using a laser to form a diamond polycrystal body piece having upper and lower surfaces and a cut surface connecting the upper and lower surfaces. The cut surface may be damaged and include graphite resulting from the laser cutting. To remove the damage and the graphite, the cut surface of the diamond polycrystal body piece is then plasma-treated. Thereby a prescribed degree of electrical insulation between the metallized upper and lower surfaces can be ensured.

Abstract: Thermodynamically metastable skutterudite crystalline-structured compounds are disclosed having preselected stoichiometric compositions and superior and optimizable thermoelectric properties. The compounds are formed at low nucleation temperatures and satisfy the formula:M.sub.1-x M'.sub.4-y Co.sub.y M".sub.12wherein:M=any metal, metalloid, or mixture thereof, except for La, Ce, Pr, Nd, and Eu when x=0, and M'=Fe, Ru, or Os, and M"=Sb, P, or As;M'=Fe, Ru, Os, Rh, or mixture thereof;M"Sb, As, P, Bi, Ge.sub.0.5-w Se.sub.0.5+w, wherein w=0 to 0.5 or mixture thereof;x=0 to 1;y=0 to 4; andwherein M' and/or M" are doped or undoped. These compounds generally have the crystalline structure of a skutterudite, wherein the crystalline structure is cubic with 34 atoms in the unit-cell in the space group Im3. The M".sub.12 atoms occupy unit-cell sites 24(g), the M'.sub.4-y atoms form a cubic sublattice occupying unit-cell sites 8(c), and the M.sub.

Abstract: A thermoelectric semiconductor is formed of a sintered semiconductor layer nd metal layers arranged on sides of opposite end faces of the sintered semiconductor layer. These metal layers are to inhibit a reaction between the sintered semiconductor layer and older layers through which electrodes are joined to the sintered semiconductor layer. The sintered semiconductor layer and the metal layers have been obtained beforehand by integrally sintering a semiconductor powder layer and metal sheets arranged on sides of opposite end faces of the semiconductor powder layer.

Abstract: A thermoelectric conversion module having a large capacity and a curved surface which can be secured to a corresponding curved surface of a base member is manufactured by inserting N type and P type semiconductor strips into through holes formed in a honeycomb structural body, filling spaces between walls defining the through holes and the semiconductor strips with an electrically insulating filler members made of an easily deformable material such as polyimide resin and silicone resin, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies each having a desired surface configuration, and providing metal electrodes on both surfaces of a thermoelectric conversion module main body such that alternate N type and P type semiconductor elements are connected in cascade.

Abstract: A method of fabricating a thermoelectric module in which a plurality of thermoelectric chips are arranged in a matrix between first and second dielectric substrates and electrically connected in series so as to heat one of the substrates and cool the other substrate. Elongated thermoelectric bars of P-type and N-type to be cut into the chips are employed together with a first conductive plate having a plurality of first contacts arranged in a matrix pattern. Adjacent first contacts spaced along the row are interconnected by horizontal bridges.

Abstract: A circuit element is produced in a circuit, and a thermoelectric cooling element comprising two dissimilar metals is thermally coupled to the circuit element for cooling the circuit element. A source is provided for applying a driving current to the circuit element. The circuit is arranged such that the driving current passes to the thermoelectric cooling element as an operating current thereof.

Abstract: A thermoelectric generator system. The thermoelectric generator has at least one hot side heat exchanger and at least one cold side heat exchanger and at least one thermoelectric module with thermoelectric elements installed in an injection molded eggcrate. The thermoelectric modules are held in close contact with the hot side heat exchanger and the cold side heat sink with a spring force. A preferred embodiment contains eight modules held in compression between the hot and cold heat exchangers with Belville springs. The eggcrate is molded from a high temperature plastic with ridges provided for extra strength and tapered walls to permit ease of installation of the thermoelectric elements and stop tabs assure correct positioning of the elements. Electrical connections at hot and cold surfaces are preferably made by thermal spraying metallize coatings on the surfaces and then surface finishing the module to expose the walls of the eggcrate.

Abstract: A thermoelectric material which exhibits a high thermoelectric performance even at high temperatures is shown and described. A thermoelectric material is provided with a plurality of conductive layers made of a first semiconductor only and a plurality of barrier layers made of a second semiconductor only, which are alternatingly arranged, a diffusion-preventive layer being interposed between neighboring conductive layers and barrier layers. Diffusion between the conductive layers and the barrier layers under high-temperature conditions is prevented, and the thermoelectric material maintains high performance standards at high temperatures.

Abstract: A diamond heat sink of the present invention comprises: a support layer consisting of substantially undoped diamond; a heat sensitive layer consisting of doped diamond, disposed on the surface of the support layer; an insulation layer consisting of substantially undoped diamond, disposed on a predetermined region in the surface of the heat sensitive layer; electrodes disposed on the heat sensitive layer, wherein an exothermal device is placed on the surface of the insulation layer; and a cooling structure disposed on the backside of the support layer, the cooling structure having at least one microchannel, the microchannel being defined by a diamond, wherein an exothermal device is to be placed on the surface of the insulation layer; and wherein the heat sensitive layer and the electrodes form a thermistor, the electrical resistivity of the thermistor being capable of varying corresponding to heat generated from the exothermal device and transferred through the insulation layer to the thermistor.

Abstract: A thermoelectric module having a gapless insulating eggcrate providing insulated spaces for a large number of p-type and n-type thermoelectric elements. The absence of gaps in the walls of the spaces virtually eliminates the possibility of interwall shorts between the elements. Electrical connections on both the hot and cold sides of the module electrically connect the elements in series or in parallel as desired. Usually, most or all of the elements will be connected in series. In a preferred embodiment, the gapless eggcrate is formed from a high temperature plastic. In a preferred embodiment, two lead wires are added before adding the hot and cold side electrical connections. In this embodiment, electrical connections on the hot and cold sides comprise a thin layer of molybdenum and a coating of aluminum over the molybdenum. The surfaces are ground down to expose the insulating eggcrate walls except where connections between the elements are desired.

Abstract: Disclosed are a noise eliminating element having a junction of components of two kinds of electroconductive materials, characterized in that the absolute values of the thermoelectric power of the two kinds of materials is 50 .mu.VK.sup.-1 or higher and there is substantially no rectifying action at the junction. Both the Seebeck effect and the Paltier effect occur simultaneous and create a transient phenomena in one element. Because of the transient phenomena in one element and because of the transient phenomenon based on both effects, noises, particularly the standing wave noises generated at around output current near to zero are eliminated. The noise eliminating elements can be inserted in a magnetic circuit of a speaker circuit for acoustic equipment or in a diflecting coil circuit of an electron image display device.

Abstract: A high-temperature gas sensor for the detection of the heat tone of combustible gases includes a semiconducting ceramic layer with thermistor properties. The semiconducting ceramic layer is formed of an oxide ceramic semiconducting material having a defined crystalline structure and a thermistor characteristic of high sensitivity. A process for the manufacture of the high-temperature gas sensor includes sintering a loosely structured layer of powder particles of an oxide semiconductor with both a defined composition and high sinter activity for achieving a required high porosity of a semiconducting ceramic layer with thermistor properties.

Abstract: A nanoporous semiconductor material and fabrication technique for use as rmoelectric elements. Starting precursors are mixed in solution so as to thoroughly dissolve in solution which is then reduced. A second phase may be added in solution to provide nanoinclusions which may be subsequently removed. A nanoporous semiconductor is formed whereby lattice thermal conductivity is greatly reduced, due to enhanced phonon scattering on the order of 10 W/cm.multidot..degree.K. The nanoporous semiconductor material may be used as the n- and p- legs in a Peltier couple utilized for a thermoelectric cooler, a cryogenic cooler, thermoelectric power generator, or a thermoelectric heat pump.

Abstract: One embodiment of the instant invention is an electrostatic discharge protection device (10) which includes a field-effect transistor, the field-effect transistor comprising: a substrate (12) of a first conductivity type and having a surface and a backside; a gate structure (18) insulatively disposed on the substrate; a blocking region (30) disposed on the substrate and adjacent to the gate structure; a lightly-doped region (32) of a second conductivity type opposite the first conductivity type and disposed within the substrate and beneath the blocking region; a channel region (14) disposed within the substrate, under the gate structure, and adjacent the lightly-doped region; a first doped region (38) of the second conductivity type and disposed within the substrate and adjacent to the lightly doped region, the first doped region spaced away from the channel region by the lightly-doped region; and a second doped region (22) of the second conductivity type and disposed within the substrate, the second doped re

Abstract: New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients.

Abstract: This invention provides a Peltier cooling device generally useful in cooling electronic devices, especially those which are formed of high Tc superconducting materials. The Peltier device of the invention is formed on a micromachined membrane structure to assure good thermal isolation and to intimately integrate the cooling device with the electronic device it is to cool.The membrane is formed by selective, controlled etching of a bulk substrate of a material such as silicon. The Peltier device is formed by selectively implanting or depositing appropriate dopants to form n-doped and p-doped segments on the membrane with a junction between the differently doped segments at the approximate mid-point of the membrane.

Abstract: A simox wafer includes substrate (1), simox silicon dioxide layer (2) and monocrystalline simox silicon layer (3). An additional silicon nitride layer (5) is deposited on top of silicon layer (3) to allow the fabrication of a monocrystalline beam (4) by selectively etching the dioxide layer (2). The thermal insulating property of the resultant beam (4) offers an ideal site for construction of thermocouples (29), light modulators (60) and active components such as p-n diodes (34), MOS transistors (47) and bipolar transistors.

Abstract: An n-type thermoelectric material composed mainly of an iron-silicite compound represented by a chemical formula of FeSi.sub.2+z in which -0.1<z<0.1. The thermoelectric material further comprising Co as an n-type dopant and Ge as an additive. The iron-silicon compound is composed substantially of a low temperature phase (.beta.-phase).

Abstract: An integrated circuit package having an internal cooling device. The integrated circuit package includes a thermoelectric device that operates according to the Peltier cooling effect. The thermoelectric device includes a first plate and a second plate that are thermally connected by a plurality of conducting elements. A package substrate is attached to the first plate such that a chamber is formed. The second plate is disposed within the chamber apart from the package substrate. The second plate is cooled when power is supplied to the thermoelectric device. By disposing an integrated circuit chip on the second plate and evaluating the chamber, the integrated circuit chip may be cooled to a sub-ambient temperature without internal or external condensation.

Abstract: The apparatus of the present invention comprises a housing defining a closed interior volume of a size sufficient to accommodate the appliance, a first heat sink located within the housing, a second heat sink located outside the housing, a reversible heat pump disposed between and in heat conductive engagement with each of the first and second heat sinks, a temperature sensor located within the housing, and electronic circuitry to actuate the heat pump in either of a first cooling mode or a second heating mode in response to predetermined temperature set points sensed by the temperature sensor within the housing. The apparatus also includes an appliance support tray and a holding bracket that engages and maintains the tray in spaced relation within the housing. A pressure equalizing diaphragm is also employed to accommodate pressure changes within the housing.

Abstract: A memory cell layout and method of forming a 6 transistor SRAM memory cell that achieves a reduced cell area using uncomplicated fabrication steps. In one embodiment, a six transistor (6/T) SRAM cell has two horizontal thin-film transistor (T5, T6) as load transistors, two transfer transistors (T1, T2), two latch transistors (T3, T4) and two current nodes (38, 40). In this structure all six transistors are formed in the substrate and a single polysilicon layer.

Abstract: Device to monitor and control the temperature of electronic chips to enhance reliability including a thermal electric cooling device in which the cold side is thermally secured to the chip and the hot side is attached to a heat sink. A thermocouple is sandwiched between the TEC device and the chip and a feedback control circuit is connected between the thermocouple and the voltage source which applies a potential to the TEC device to maintain the chip at the desired substantially constant temperature.

Abstract: A thermoelectric element having a very large number of alternating layers of semiconductor material. The alternating layers all have the same crystalline structure. The inventors have demonstrated that materials produced in accordance with this invention provide figures of merit more than six times that of prior art thermoelectric materials. A preferred embodiment is a superlattice of Si, as a barrier material, and SiGe, as a conducting material, both of which have the same cubic structure. Another preferred embodiment is a superlattice of B--C alloys, the layers of which would be different stoichiometric forms of B--C but in all cases the crystalline structure would be alpha 0. In a preferred embodiment the layers are grown under conditions as to cause them to be strained at their operating temperature range in order to improve the thermoelectric properties.

Abstract: An improved thermoelectric module is described. A first electrically conductive pattern is defined on a first substrate and a second electrically conductive pattern is defined on a second substrate. Alternating bars of a first thermoelectric material and a second thermoelectric material are arranged parallel to each other. The bars are fixed into place on the first conductive pattern by an effective thermal and electrical connection with the conductive pattern. One such connection means is soldering. Then the bars are separated into elements. The second substrate is positioned over the elements and fixed to the elements to complete the manufacture of the TEM.

Abstract: A new and improved integrated circuit cooling apparatus includes a heat-conductive base plate to be placed against an integrated circuit, a Peltier Effect cooling module having a cooling side connected to a top surface of the heat-conductive base plate, a heat radiator assembly connected to a heating side of the Peltier Effect cooling module, and a fan assembly juxtaposed next to a heat-radiating portion of the heat radiator assembly. The Peltier Effect cooling module cools the integrated circuit, and the fan assembly cools heat radiated from the heat radiator assembly. The heat radiator assembly can include threaded channels, and the fan assembly includes connection apertures adapted to be placed in registration with the threaded channels of the heat radiator assembly. Threaded connectors, such as screws, arc adapted to connect to the threaded channels to connect the fan assembly to the heat radiator assembly.

Abstract: A superconducting apparatus has a superconducting element, which is a member to be cooled and which exhibits a superconducting phenomenon; an electronic cooling element composed of a cooling electrode provided to the superconducting element via an insulating layer, p-type and n-type semiconductor layers formed to be connected to the cooling electrode, heat-radiation electrodes provided to the semiconductor layers independently of each other, and a heat-radiation plate provided to the heat-radiation electrodes via the insulating layer; lead wires for electrically connecting the superconducting element and the electronic cooling element to external circuits, respectively. The superconducting element and the electronic cooling element, which are integrally packaged, are installed within the first container. Internally sealed by an inert gas atmosphere, the first container is installed within the second container. The second container is internally sealed in a vacuum state.

Abstract: A thermoelectric device using a pressed and sintered P-type semiconductor material connected to a crystalline N-type semiconductor material exhibits an unexpectedly high figure-of-merit, Z, and improved mechanical strength.

Abstract: A thermoelement (leg) of a thermocouple for use in peltier heating or generation of power by the Seebeck effect including a plurality of interleaved films wherein compositions of neighboring films are selected to create Kapitza boundaries between the films such as to reduce thermal conductivity but provide adequate electrical conductivity. The plurality of interleaved films includes a semiductor with suitable doping to establish required extrinsic conductivity and metals having dissimilar lattices such as aluminum and tungsten abutting one another. The practical number of films in the composite to establish the effect is ten. A preferred thickness of the films is less than twenty thousand Angstroms.

Abstract: A multi-layer superlattice quantum well thermoelectric material using materials for the layers having the same crystalline structure. A preferred embodiment is a superlattice of Si and SiGe, both of which have a cubic structure. Another preferred embodiment is a superlattice of B-C alloys, the layers of which would be different stoichometric forms of B-C but in all cases the crystalline structure would be alpha rhombohedral.

Abstract: A method of manufacturing a thermoelectric module is provided. A first electrically conductive pattern is defined on a first substrate and a second electrically conductive pattern is defined on a second substrate. Alternating bars of a first thermoelectric material and a second thermoelectric material are arranged parallel to each other. The bars are fixed into place on the first conductive pattern by an effective thermal and electrical connection with the conductive pattern. One such connection means is soldering. Then the bars are separated into elements. The second substrate is positioned over the elements and fixed to the elements to complete the manufacture of the TEM.

Abstract: A thermoelectric element sheet includes at least two layered structures having a plurality of thermoelectric elements which are arranged between insulating films. In each layered structure the thermoelectric semiconductors are arranged in pairs and electrodes connect the thermoelectric semiconductors of each pair to provide a plurality of structural units. Further electrodes connect the structural units. The thermoelectric element sheet can be used in thermoelectric energy conversion systems which depend on the Seebeck, Peltier or Thomson effect to convert thermal energy to electrical energy or vice versa.

Abstract: A superlattice comprising alternating layers of (PbTeSe).sub.m and (BiSb).sub.n (where m and n are the number of PbTeSe and BiSb monolayers per superlattice period, respectively) having engineered electronic structures for improved thermoelectric cooling materials (and other uses) may be grown by molecular beam epitaxial growth. Preferably, for short periods, n+m<50. However, superlattice films with 10,000 or more such small periods may be grown. For example, the superlattice may comprise alternating layers of (PbTe.sub.1-z Se.sub.z).sub.m and (Bi.sub.x Sb.sub.1-x).sub.n. According to a preferred embodiment, the superlattice comprises a plurality of layers comprising m layers of PbTe.sub.0.8 Se.sub.0.2 and n layers of Bi.sub.0.9 Sb.sub.0.1, where m and n are preferably between 2 and 20.

Abstract: A nanoporous semiconductor material and fabrication technique for use as thermoelectric elements. Starting precursors are mixed in solution so as to thoroughly dissolve in solution which is then reduced. A second phase may be added in solution to provide nanoinclusions which may be subsequently removed. A nanoporous semiconductor is formed whereby lattice thermal conductivity is greatly reduced, due to enhanced phonon scattering on the order of 10 W/cm.multidot..degree.K. The nanoporous semiconductor material may be used as the n- and p- legs in a Peltier couple utilized for a thermoelectric cooler, a cryogenic cooler, thermoelectric power generator, or a thermoelectric heat pump.

Abstract: A laser-diode-pumped solid-state laser includes a solid-state laser rod pumped by a pumping laser beam emitted from a semiconductor laser. The laser beam produced by the solid-state laser rod is oscillated by a resonator, and the wavelength of the oscillated laser beam is converted into another wavelength by an optical wavelength converter. The resonator is jointly provided by the solid-state laser rod and the optical wavelength converter. Alternatively, the solid-state laser rod may comprise a self-frequency-doubling crystal for producing a laser beam, oscillating the laser beam, and converting the wavelength of the oscillated laser beam into another wavelength. The temperature of the semiconductor laser and the resonator is regulated by a common temperature regulating device which comprises a Peltier device controlled by a driver circuit.

Abstract: A superconductive apparatus including a superconductive member to be cooled, a cooling element which exhibits Peltier effect upon supply of electric power thereto such that the superconductive member is thermally coupled with a cooling portion of the cooling element and a container for accommodating the superconductive member and the cooling portion.