Abstract: A stacked die semiconductor package includes: a substrate, having a first surface and an opposite surface thereto; a plurality of dice, structured for being stacked one on top of the other on the first surface of the substrate, including at least a first die which is mounted closest to the first surface, a second die mounted thereupon and having a larger footprint area than the first die, and a top die having a smaller footprint area than the underlying die thereof, and each having a plurality of contact pads and a plurality of wires for electrically connecting the dice to the first surface of the substrate; at least one interposer between the plurality of dice; advantageously, said top die is electrically directly connected to one of the underlying dice. A method for the assembly of a stacked die semiconductor package is provided.

Abstract: A stacked die package includes a substrate or interposer board that includes a contact area on a top surface and landing pads surrounding the contact area. Solder pads are disposed on an opposite side of the substrate. The solder pads are electrically connected with the landing pads by inner board wiring. A reconstituted die, which includes a die surrounded by a frame, is mounted over the substrate. A top die is mounted over the reconstituted die. Both the reconstituted die and the top die are electrically connected to the substrate, e.g., by wire bonds.

Abstract: An apparatus is described incorporating an interposer having a cavity for a portion of an antenna structure, having conductor through vias, a top Si part having interconnection wiring and having pads for electrically mounting an integrated circuit chip thereon, wherein the top Si part mates with the interposer electrically and mechanically. The interposer and top Si part may be scaled to provide an array of functional units. The invention overcomes the problem of combining a high efficient antenna with integrated circuit chips in a Si package with signal frequencies from 1 to 100 GHz and the problem of shielding components proximate to the antenna and reduces strain arising from mismatching of TCEs.

Abstract: A semiconductor integrated circuit device includes a semiconductor substrate having a first surface. First wells of first conductive type are formed on the semiconductor substrate. Second wells of second conductive type are formed on the semiconductor substrate. The first wells surround each of the second wells on the first surface. The second wells surround each of the first wells on the first surface. One of the first wells and one of the second wells which are adjacent to each other compose a well pair. An inverter pair is composed of a first inverter and a second inverter. An input and an output of the first inverter are electrically connected to an output and an input of the second inverter respectively. Transistors composing the inverter pair are formed in the well pair.

Abstract: A semiconductor module has a coupling substrate which is used for the internal electrical coupling of an integrated circuit on adjacent semiconductor chips. The semiconductor chips have integrated circuits and are arranged on a mount structure. The semiconductor chips are externally connected to external contacts. The coupling substrate overlaps edge areas of the adjacent semiconductor chips.

Abstract: A semiconductor wafer has different impurity concentrations in respective regions and gate patterns have different lengths in the respective regions. The semiconductor wafer has different impurity concentrations in a central region, an intermediate region, and an outer region. The gate patterns have different lengths in the central region, the intermediate region, and the outer region. Accordingly, the semiconductor wafer may have a substantially uniform threshold voltage throughout the semiconductor wafer.

Abstract: An apparatus and method for forming optical black pixels having uniformly low dark current. Optical Black opacity is increased without having to increase Ti/TiN layer thickness. A hybrid approach is utilized combining a Ti/TiN OB layer in conjunction with in-pixel metal stubs that further occlude the focal radius of each pixel's incoming light beam. Additional metal layers can be used to increase the opacity into the infrared region.

Abstract: Physical barriers (210) are present between neighboring pixels (200) on a circuit substrate (100) of an active-matrix display device, such as an electroluminescent display formed with LEDs (25) of organic semiconductor materials. The invention forms at least parts of the barriers (210) with metal or other electrically-conductive material (240) that is insulated (40) from the LEDs but connected to the circuitry (4, 5, 6, 9, 140, 150, 160, T1, T2, Tm, Tg, Ch etc.) within the substrate (100). This conductive barrier material (240) may back up or replace, for example, matrix addressing lines (150) and/or form an additional component either within the pixel array or outside. The additional component comprising the conductive barrier material (240) is advantageously a capacitor (Ch), or an inductor (L) or transformer (W), or even an aerial.

Abstract: In a semiconductor apparatus of the present invention, a plurality of circuit components are provided. A first bus interconnects the circuit components. A second bus interconnects the circuit components. A switching unit outputs a select signal that causes each circuit component to select one of the first bus and the second bus when transmitting a signal from one of the circuit components to another. The second bus has a size larger than a size of the first bus.

Abstract: The chip for the multi-chip semiconductor device having the markings for alignment formed on the front surface and/or the back surface of the chip only by the processing from the front surface of the chip (photolithography, etch) and the method for manufacturing same are presented, without adding any dedicated process step to the formation process for the marking for alignment. In the chip for the multi-chip semiconductor device having two or more electroconductive through plug in one chip for the multi-chip semiconductor device, one or more electroconductive through plugs are employed for the marking for alignment, and the chip is configured to allow identification of the marking for alignment on the front surface and/or the back surface of the chip for the multi-chip semiconductor device. Then, an insulating film is provided on the front surface and/or the back surface of the electrically conducting through plug.

Abstract: According to one embodiment of the invention, a method of forming a system-in-a-package includes providing a first substrate, coupling a first die to a top surface of the first substrate, coupling one or more surface mount devices to a top surface of a second substrate, coupling the second substrate to a top surface of the first die, interconnecting the first substrate, the second substrate, and the first die, and encapsulating the first die, the second substrate and the surface mount devices.

Abstract: A variety of techniques and structures are described that integrate an insulated pedestal into the back surface of integrated circuit dice. The die has an insulated integral pedestal formed therein that acts as a spacer. The pedestal has a footprint that is smaller than the total footprint of the die so that a portion of the active region of the die overhangs the pedestal. The geometry of the pedestal may be widely varied and in some embodiments, multiple pedestals may be provided on the stacked die. In another aspect, the pedestals are formed at the wafer level such that the pedestals are defined in the back surface of the wafer. Often, the thickness of the pedestals will be thicker than the portions of the wafer outside the pedestal areas. The described dice are particularly well suited for use in stacked die packages.