Abstract: A semiconductor light-emitting device having favorable optical characteristics can include a first conductor pattern having a die-bonding pad and a second conductor pattern having a wire bonding pad, which are formed on a circuit board. The semiconductor light-emitting device can also include a semiconductor light-emitting chip mounted on the die-bonding pad, a first encapsulating material, which can include a wavelength converting material to wavelength-convert light emitted from the chip and can cover the chip in a substantially fair dome shape on the circuit board, and a second encapsulating resin to cover the first encapsulating material, which can transmit light emitted from the first encapsulating material. Thus, a semiconductor light-emitting device is provided, which can emit a mixture light having various color tones and favorable optical characteristics and which can be used to illuminate goods laid out in a narrow show window, a vending machine, and the like.

Abstract: An imaging apparatus comprising a plurality of pixels each of which includes a photoelectric conversion portion, and a light-condensing portion arranged on the plurality of pixels, wherein the light-condensing portion has an area smaller than an area of the photoelectric conversion portion.

Abstract: A streetlight includes a light-emitting diode and a passive cooling system. The light-emitting diode is in thermal engagement with the bottom of the cooling system. The cooling system has an upper cooling chamber and a lower cooling chamber displaced from the upper cooling chamber. A thermal flow circuit extends through a domed chamber, the upper cooling chamber, a return passage and the lower cooling chamber. The domed chamber is inside the lower cooling chamber in thermal engagement with the bottom directly over the light-emitting diode and has inlet channels in thermal engagement with the bottom and an outlet to the upper cooling chamber.

Abstract: An emitter package comprising a light emitting diode (LED) emitting light at a wavelength within a wavelength range and a plurality of phosphors. Each of the phosphors absorbs at least some light from the LED and re-emits a different wavelength of light. The package emits a combination of light from the LED and the plurality of phosphors, with the phosphors having excitation characteristics such that the emitter package emits light within a standard deviation of a target color for LEDs emitting at the wavelengths with the wavelength range. A method for fabricating emitter packages comprising fabricating a plurality of LEDs, each of which emits at a wavelength within a range of wavelengths. Each of the LEDs are arranged in a respective package with a plurality of conversion materials so that at least some light from each of the LEDs is absorbed and re-emitted by its corresponding conversion materials.

Abstract: Semiconductor packages are provided. The semiconductor packages may include an upper package including a plurality of upper semiconductor devices connected to an upper package substrate. The semiconductor packages may also include a lower package including a lower semiconductor device connected to a lower package substrate. The upper and lower packages may be connected to each other.

Abstract: A light emitting element in use for an LED array comprises an electrode layer, a semiconductor light emitting layer consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first wiring layer formed along and in parallel to one side of the semiconductor light emitting layer, and a plurality of second wiring layers extending from the first wiring layer to the semiconductor light emitting layer and electrically connected to the n-type semiconductor layer on a surface of the semiconductor light emitting layer, wherein a plane shape of the semiconductor light emitting layer comprises two short sides including a portion inclined from a line perpendicular to a upper and a lower sides, and a vertical line from a vertex where the upper side and the short side meet crosses the lower side of the adjacent light emitting element.

Abstract: A white light emitting lamp is disclosed comprising a solid state ultra violet (UV) emitter that emits light in the UV wavelength spectrum. A conversion material is arranged to absorb at least some of the light emitting from the UV emitter and re-emit light at one or more different wavelengths of light. One or more complimentary solid state emitters are included that emit at different wavelengths of light than the UV emitter and the conversion material. The lamp emits a white light combination of light emitted from the complimentary emitters and from the conversion material, with the white light having high efficacy and good color rendering. Other embodiments of white light emitting lamp according to the present invention comprises a solid state laser instead of a UV emitter. A high flux white emitting lamp embodiment according to the invention comprises a large area light emitting diode (LED) that emits light at a first wavelength spectrum and includes a conversion material.

Abstract: The present invention provides a multicolor LED assembly packaged with improved and controlled color mixing to create a more uniform color mixture. The assembly includes at least one lens overlying an encapsulant which encapsulates a plurality of LED dies. The lens includes a top surface and a bottom surface with the contour of the bottom surface designed to redirect light from each of the LED dies in different directions towards the top surface of the lens. The contoured shaped of the bottom surface of the lens redirects light from each of the plurality of LED dies such that illuminance and luminous intensity distributions of the plurality of LED dies substantially overlap, wherein the deviation from complete overlap is less than a predetermined amount which is substantially imperceptible to the average human eye.

Abstract: A multi-LED package includes a heat sink including a primary slug and a secondary slug separated from each other, a primary LED chip mounted on the primary slug, one or more secondary LED chips mounted on the secondary slug, a lead frame structure electrically wired to the primary and secondary LED chips, and a phosphor covering at least a part of the primary LED chip. Another multi-LED package includes a heat sink having an upper surface and partitions protruding therefrom, a primary LED chip mounted inside the partitions, one or more secondary LED chips mounted outside the partitions, a lead frame structure electrically wired to the primary and secondary LED chips, and a phosphor covering at least a part of the primary LED chip.

Abstract: An optoelectronic headlight which emits electromagnetic radiation is specified, which has a luminescence diode chip with at least two spatial emission regions or which has at least two luminescence diode chips each having at least one spatial emission region. The headlight is suitable in particular for a front headlight for motor vehicles. The emission regions, in a plan view of a main extension plane associated with them, are shaped differently, are of different sizes and/or are not shaped rectangularly and are differently oriented. Particularly preferably, the emission regions can be driven independently of one another. Methods for production of an optoelectronic headlight and a luminescence diode chip are furthermore specified.

Abstract: Disclosed is a light emitting device array. The light emitting device array comprises a light emitting device and a body comprises first and second lead frames electrically connected to the light emitting device and a substrate on which the light emitting device package is disposed, the substrate comprises a base layer and a metal layer disposed on the base layer and electrically connected to the light emitting device package, wherein the metal layer comprises first and second electrode patterns electrically connected to the first and second lead frames and a heat dissipation pattern insulated from at least one of the first or(and) second electrode patterns, absorbing heat generated from at least one of the base layer or(and) the light emitting device package and then dissipating the heat.

Abstract: An organic light-emitting display apparatus may include: a planarization layer disposed on a substrate and covering a plurality of thin film transistors; pixel electrodes, each comprising a light emission portion and anon-light emission portion, the light emission portion being arranged on the planarization layer in a first grid pattern; via-holes, each connecting one thin film transistor and one pixel electrode through the planarization layer, and arranged in a second grid pattern offset from the first grid pattern; dummy via-holes spaced apart from the via-holes; a pixel-defining layer (PDL) disposed on the planarization layer and covering the via-holes, the dummy via-holes, and the non-light emission portion of the pixel electrodes; an organic layer disposed on the light emission portion and comprising an emissive layer; and an opposite electrode disposed on the organic layer.

Abstract: Disclosed is a light emitting device array. The light emitting device array comprises a light emitting device and a body comprises first and second lead frames electrically connected to the light emitting device and a substrate on which the light emitting device package is disposed, the substrate comprises a base layer and a metal layer disposed on the base layer and electrically connected to the light emitting device package, wherein the metal layer comprises first and second electrode patterns electrically connected to the first and second lead frames and a heat dissipation pattern insulated from at least one of the first or(and) second electrode patterns, absorbing heat generated from at least one of the base layer or(and) the light emitting device package and then dissipating the heat.

Abstract: A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a lower passivation layer on the first data line and the first drain electrode, forming an upper passivation layer on the lower passivation layer and a metal layer on the upper passivation layer, etching the metal layer by using a photosensitive film as a mask to form a reflecting electrode and to expose the lower passivation layer, etching the exposed lower passivation layer to form a first contact hole exposing the first drain electrode, and forming a connection assistance member connecting the first drain electrode and the reflecting electrode through the first contact hole after removing the photosensitive film.

Abstract: There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first gate electrode. In the semiconductor layer, two kinds of n?-type impurity regions are formed between a channel formation region and n+-type impurity regions. Some of the n?-type impurity regions overlap with a gate electrode, and the other n?-type impurity regions do not overlap with the gate electrode. Since the two kinds of n?-type impurity regions are formed, an off current can be reduced, and deterioration of characteristics can be suppressed.

Abstract: A light emitting diode device (e.g., LED package) may include at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. A LED device may include a first LED die and at least one additional LED die disposed at different positions within a common reflector cup or relative to a common lens. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Abstract: Radiation-transducer devices, e.g., lighting-emitting devices, including radiation transducers, e.g., light-emitting diodes, and associated devices, systems, and methods are disclosed herein. A radiation-transducer device configured in accordance with a particular embodiment includes a base structure including a first lead, a cap structure including a second lead, and a plurality of radiation transducers irregularly distributed between the base structure and the cap structure. The radiation transducers are non-uniformly oriented relative to the first and second leads and the device is configured to intermittently power the radiation transducers using an alternating current. A method for manufacturing radiation-transducer devices in accordance with a particular embodiment includes distributing a plurality of radiation transducers onto a base structure or a cap structure without individually handling the radiation transducers.

Abstract: A method of manufacturing an ohmic contact layer and a method of manufacturing a top emission type nitride-based light emitting device having the ohmic contact layer are provided. The method of manufacturing an ohmic contact layer includes: forming a first conductive material layer on a semiconductor layer; forming a mask layer having a plurality of nano-sized islands on the first conductive material layer; forming a second conductive material layer on the first conductive material layer and the mask layer; and removing the portion of the second conductive material on the islands and the islands through a lift-off process using a solvent. The method ensures the maintenance of good electrical characteristics and an increase of the light extraction efficiency.

Abstract: Provided is a light emitting diode (LED) package including a phosphor substrate; an LED chip mounted on the phosphor substrate; a circuit board mounted on the other region of the phosphor substrate excluding the region where the LED chip is mounted; an electrode connection portion for electrically connecting the LED chip and the circuit board; and a sealing member that covers the LED chip, the circuit board, and the phosphor substrate.

Abstract: An illumination apparatus includes a plurality of semiconductor light-emitting devices, a reflective layer, a plurality of conductor parts and a translucent adhesive layer. Each of the semiconductor light-emitting devices has a translucent substrate, and a semiconductor light-emitting layer formed on the substrate. The reflective layer has a size on which semiconductor light-emitting devices are arranged at intervals. The conductor parts are provided on the reflective layer, and electrically connected to the semiconductor light-emitting devices. The adhesive layer bonds the substrates of the semiconductor light-emitting devices onto the reflective layer, and thereby holds the semiconductor light-emitting devices on the reflective layer.

Abstract: A packaged power supply module (100) comprising a chip (110) with a first power field effect transistor (FET) and a second chip (120) with a second FET conductively attached side-by-side onto a conductive carrier (130), the transistors having bond pads of a first area (210) and the carrier having bond pads of a second area (230) smaller than the first area. Conductive bumps (114, 115, 124, 125) attached to the transistor bond pads and conductive bumps (126) attached to the carrier bond pads have equal volume and are coplanar (150), the bumps on the transistor pads having a first height and the bumps on the carrier pads having a second height greater than the first height.

Abstract: Some embodiments of the invention provide a programmable system in package (“PSiP”). The PSiP includes a single IC housing, a substrate and several IC's that are arranged within the single IC housing. At least one of the IC's is a configurable IC. In some embodiments, the configurable IC is a reconfigurable IC that can reconfigure more than once during run time. In some of these embodiments, the reconfigurable IC can be reconfigured at a first clock rate that is faster (i.e., larger) than the clock rates of one or more of the other IC's in the PSiP. The first clock rate is faster than the clock rate of all of the other IC's in the PSiP in some embodiments.

Abstract: According to an embodiment, the present invention provides a semiconductor device that is easily integrated with other electronic circuits and functions as an oscillator with high frequency accuracy. The semiconductor device includes: a semiconductor substrate; an element region; an element isolation region that surrounds the element region; a field effect transistor including a gate electrode that is formed on the element region, source and drain regions, and a channel region that is interposed between the source region and the drain region; gate, source, and drain terminals that are used to apply a voltage to the gate electrode, the source region, and the drain region, respectively; and an output terminal that is electrically connected to the channel region.

Abstract: A point light source includes a light-emitting portion, a first lead and a second lead. The first lead and the second lead are electrically connected to the light-emitting portion. The first lead and the second lead respectively have a wedging portion. The wedging portions can be matched with each other. A light source module using the point light source is also provided. The light source module includes at least one light source assembly. Each light source assembly includes a plurality of the point light sources connected in series. Adjacent two point light sources are wedged to each other in series by a combination of the wedging portions of the adjacent first lead and second lead.

Abstract: A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions.

Abstract: The present invention relates to a light emitting diode package which can reduce a wire length, and can improve heat and light resistance. The light emitting diode package includes a molded portion having a housing, a plurality of light emitting chips housed in the housing, a plurality of main lead portions having the plurality of light emitting chips mounted thereto respectively, at least one sub-lead portion formed spaced from the main lead portions and electrically connected to at least any one of the plurality of main lead portions and the plurality of light emitting chips with a wire for electrically connecting the plurality of light emitting chips each other.

Abstract: A light emitting device includes a plurality of micro diodes, which are electrically connected to constitute a bridge rectifier circuit. Each branch of the bridge rectifier circuit includes a single micro diode or a plurality of micro diodes. The light emitting device is electrically connected to an AC power source, which alternately drives the light emitting device in two current loops. Therefore, the micro diodes in two current loops of the bridge rectifier circuit emit light by turns.

Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.

Abstract: In one embodiment, a single light emitting diode lamp package includes at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. In another embodiment, a LED device includes a first LED die and at least one additional LED die disposed at different positions within a common reflector cup. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Abstract: A light emitting diode (LED) module package structure is described. The LED module package structure includes a metal heat dissipating board, a plurality of light emitting diode chips fixed on the metal heat dissipating board, at least one chip-scale connector fixed on the metal heat dissipating board to electrically connect to the light emitting diode chip via a bonding wire. The chip-scale connector includes a sapphire substrate, a conductive metal layer and an insulation protruding member. The insulation protruding member divides the conductive metal layer into a plurality of conductive areas. In addition, the LED module package structure can further includes a chip-scale power connector fixed in the metal heat dissipating board to connect the chip-scale connector or the light emitting diode chip via the bonding wire.

Abstract: Disclosed is a light emitting device array. The light emitting device array comprises a light emitting device and a body comprises first and second lead frames electrically connected to the light emitting device and a substrate on which the light emitting device package is disposed, the substrate comprises a base layer and a metal layer disposed on the base layer and electrically connected to the light emitting device package, wherein the metal layer comprises first and second electrode patterns electrically connected to the first and second lead frames and a heat dissipation pattern insulated from at least one of the first or(and) second electrode patterns, absorbing heat generated from at least one of the base layer or(and) the light emitting device package and then dissipating the heat.

Abstract: A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.

Abstract: An optoelectronic headlight which emits electromagnetic radiation is specified, which has a luminescence diode chip with at least two spatial emission regions or which has at least two luminescence diode chips each having at least one spatial emission region. The headlight is suitable in particular for a front headlight for motor vehicles. The emission regions, in a plan view of a main extension plane associated with them, are shaped differently, are of different sizes and/or are not shaped rectangularly and are differently oriented. Particularly preferably, the emission regions can be driven independently of one another. Methods for production of an optoelectronic headlight and a luminescence diode chip are furthermore specified.

Abstract: An LED module includes a substrate, one or more LED chips supported by a main surface of the substrate, and wirings. The substrate has one or more through holes penetrating from the main surface to a rear surface. The wirings are formed on the substrate and make electrical conduction with the LED chips. The wirings include pads which are formed on the main surface and make electrical conduction with the LED chips, rear surface electrodes which are formed on the rear surface, and through wirings which make electrical conduction between the pads and the rear surface electrodes and are formed on the inner sides of the through holes.

Abstract: A manufacturing method of an LED comprises attaching an LED epitaxial wafer (LED wafer) to an expanding tape, dicing the LED wafer on the expanding tape longitudinally and laterally to a certain element size to divide into a plurality of LED elements, expanding the expanding tape to a certain size to form an enlarged expanding tape, placing respective pairs of element electrodes of the plurality of LED elements that are attached to the enlarged expanding tape on respective pairs of electrodes on a printed-circuit board assembly collectively to perform a bonding, and removing the enlarged expanding tape from the plurality of the LED elements.

Abstract: An image display apparatus displaying an image by selectively emitting light from a plurality of semiconductor light emitting elements being regularly arranged, includes a substrate; a first conductive wiring layer being formed on the substrate and supplying a first electric potential; a second conductive wiring layer supplying a second electric potential; the plurality of semiconductor light emitting elements each including a first electrode layer being electrically connected to the first conductive wiring layer and a second electrode layer being electrically connected to the second conductive wiring layer; and a plurality of raised parts being disposed on the substrate, each of the raised parts having an upper surface which is higher than an upper surface of the first conductive wiring layer; wherein the plurality of semiconductor light emitting elements is fixed on the plurality of raised parts respectively.

Abstract: A high-power light-emitting diode (LED) lamp has a plurality of units. Each unit includes an LED die and a thermo-electric cooling device coupled to the LED die. A power source supplies a fixed current to the thermo-electric cooling device wherein the fixed current is based on heat generated by the LED die in normal operation. Accordingly, the unit operates without a controller.

Abstract: A packaged microchip has a base, at least one spacer coupled to the base, and first and second microchips mounted to the at least one spacer. The at least one spacer is configured to substantially prevent leakage current between the first and second microchips.

Abstract: Disclosed are a light emitting device having a plurality of light emitting cells connected in series and a method of fabricating the same. The light emitting device includes a buffer layer formed on a substrate. A plurality of rod-shaped light emitting cells are located on the buffer layer to be spaced apart from one another. Each of the light emitting cells has an n-layer, an active layer and a p-layer. Meanwhile, wires connect the spaced light emitting cells in series or parallel. Accordingly, arrays of the light emitting cells connected in series are connected to be driven by currents flowing in opposite directions. Thus, there is provided a light emitting device that can be directly driven by an AC power source.

Abstract: A light emitting component can include a substrate, a light emitting device supported by the substrate, wherein the light-emitting device has first and second terminals, and a switching element supported by the substrate and having first and second terminals electrically connected to the first and second terminals of the light-emitting device, respectively. The switching element is configured to, at least in part, divert at least some current away from the light emitting device when the switching element is in a closed state. An electrical connection between the first terminal of the switching element and the first terminal of the light emitting device can have a length of less than 5 cm (e.g., less than 2 cm, less than 1 cm, less than 5 mm, less than 1 mm). A current regulator may be supported by a second substrate and can supply current to the light emitting device.

Abstract: A reflection-type photointerrupter of the present invention includes a substrate, a light emitting element and a light receiving element. The substrate includes a first surface, a second surface opposite the first surface, and a first and a second recesses that are open in the first surface side. The light emitting element is arranged in the first recess, while the light receiving element is arranged in the second recess. The light emitting element is capable of emitting light. The light receiving element is capable of receiving the light emitted from the light emitting element and reflected by an object to be detected.

Abstract: This research discloses an ultra wideband system-on-package (SoP). The SoP includes a package body; a first integrated circuit mounted on the package body; a first signal transmission unit connected to the first integrated circuit; a signal via connected to the first signal transmission unit and including a slab line and a trough line; and a second signal transmission unit connected to the signal via. The technology of the present research can transmit ultra broadband signals by minimizing discontinuity of signals appearing during vertical transition that occurs in the course of a signal transmission to/from an external circuit, and a fabrication method thereof.

Abstract: In a fluorescer solution, a plurality of types of fluorescent particles are contained in a resin liquid. Average particle sizes of these fluorescent particles decrease as densities of the types increase. In other words, average settling rates vs of the types of the fluorescent particles ascertained by v s = D p 2 × ( ? p - ? f ) × g 18 × ? are equal to each other, where Dp is an average particle size of each of the types of fluorescent particles, pp is a density of each of the types of fluorescent particles, pf is a density of the resin liquid, ? is a viscosity of the resin liquid, g is the acceleration due to gravity, and vs is an average settling rate of each of the types of fluorescent particles.

Abstract: A semiconductor apparatus includes a substrate; and a plurality of semiconductor thin films formed on said substrate, each of said semiconductor thin films having a pn-junction, and electrodes of p-type and n-type for injecting carriers to the pn-junction, wherein said semiconductor thin films are formed so that all or a part of said pn-junctions are connected serially. As different from a semiconductor thin film constituted of a single pn-junction, the light emission with the invented semiconductor apparatus is the summation of the light emission intensities of the entire pn-junctions, so that the light emitting intensity can be increased largely.

Abstract: A semiconductor light-emitting device includes: a support; a semiconductor light-emitting element bonded to the support and comprising a first electrode, a second electrode, and a semiconductor layer including at least an active layer, at least one of the first and second electrodes overlying the semiconductor layer; and a wiring metal formed to extend from above a portion of an upper surface of the support not underlying the semiconductor light-emitting element to one said electrode overlying the semiconductor layer. The electrode is fed with power through the wiring metal.

Abstract: A semiconductor light emitting device (10) is provided with a base substrate (12) and three LED chips (14A, 14B, and 14C) disposed on the base substrate (12). Each LED chip (14A, 14B, and 14C) includes a semiconductor multilayer structure (20) and has a rhombus shape with interior angles of approximately 60° and approximately 120° in plan view. Each semiconductor multilayer structure (20) has an HCP single crystal structure and includes a light emission layer (24). The LED chips (14A, 14B, and 14C) are arranged on the base substrate (12) so as to face one another at a vertex forming the larger interior angle in plan view. With this arrangement, the LED chips (14A, 14B, and 14C) as a whole form a substantially regular hexagonal shape.

Abstract: A method for making a premolded clip structure is disclosed. The method includes obtaining a first clip and a second clip, and forming a molding material around the first clip comprising a first surface and the second clip comprising a second surface. The first surface of the first clip structure and the second surface of the second clip structure are exposed through the molding material, and a premolded clip structure is then formed.

Abstract: A vertical structured Light Emitting Diode (LED) array using wafer level bonding. The process bonds two or more LED arrays vertically to produce light mixing in a small footprint. The vertically bonded LED array contains through substrate vias and a plurality of metal posts coated with solder to form an internal cavity between the LED layers. This LED array structure is intrinsically hermetically sealed.

Abstract: A base apparatus includes a base and two finger devices. The base has a first surface and two opposite sides. The finger devices are respectively mounted on the sides of the base, are made of conductive material, and each of the finger devices has multiple fingers. The fingers are extended on the first surface of the base, wherein the fingers of a first finger device are arranged respectively corresponding to the fingers of a second finger device whereby each pair of corresponding fingers supports an illuminating device. The base has a height, each of the fingers has a width and the width is smaller than the height. When the LED is mounted onto a substrate, the LED can be mounted on the substrate by its side so that an entire assembly height of the LED is reduced and is equal to the width of the LED.

Abstract: A chip package comprises a first chip having a first side and a second side, wherein said first chip comprises a first pad, a first trace, a second pad and a first passivation layer at said first side thereof, an opening in said first passivation layer exposing said first pad, said first trace being over said first passivation layer, said first trace connecting said first pad to said second pad; a second chip having a first side and a second side, wherein said second chip comprises a first pad at said first side thereof, wherein said second side of said second chip is joined with said second side of side first chip; a substrate joined with said first side of said first chip or with said first side of said second chip; a first wirebonding wire connecting said second pad of said first chip and said substrate; and a second wirebonding wire connecting said first pad of said second chip and said substrate.