Abstract: An organic light-emitting display device comprises a substrate including a plurality of light-emitting regions separated by a non-light-emitting region, an organic light-emitting element disposed on each of the light-emitting regions, and a photoactive element disposed on the non-light-emitting region.

Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

Abstract: A light detecting array structure and a light detecting module are provided. The light detecting array structure includes a plurality of first electrodes, a plurality of second electrodes, a first carrier selective layer, a second carrier selective layer, and a light-absorbing active layer. The second electrodes are disposed on one side of the first electrodes. Between the first electrodes and the second electrodes, a first carrier selective layer, a light-absorbing active layer and a second carrier selective layer are disposed. The light detecting module includes the light detecting array structure and a control unit. The control unit is coupled to the first electrodes and second electrodes, selectively provides at least two cross voltages between each of the first electrodes and each of the second electrodes, and reads photocurrents flowing through the first electrodes and second electrodes.

Abstract: An organic light emitting diode (OLED) display is disclosed. The display has high contrast and displays good black color by removing or decreasing influence of ambient light. The display includes an organic electro-luminescence emission layer and a plurality of pixels respectively including an active lighting layer disposed on the organic electro-luminescence emission layer. In the pixels, when the organic electro-luminescence emission layer emits light, light transmittance of the active lighting layer is decreased.

Abstract: An organic light emitting display device in which an upper electrode and power supply lines are connected through through-holes such that charges can be smoothly supplied to the upper electrode of the organic light emitting display device, making it possible to improve light emitting efficiency.

Abstract: According to example embodiments, a photodiode includes a photoelectric layer on a first electrode, a second electrode on the photoelectric layer, and a first phosphorescence layer on the second electrode.

Abstract: A solar cell integrated organic light emitting diode (OLED) display is disclosed. In one embodiment, the organic light emitting diode (OLED) display includes i) a substrate, ii) an organic light emitting element formed on the substrate and including a reflection electrode, an organic emission layer, and a transparent electrode sequentially deposited from the substrate. The OLED display may further include a solar cell unit positioned on the organic light emitting element and an encapsulation member positioned on one of the organic light emitting element and the solar cell unit.

Abstract: An organic light-emitting display device comprises a substrate including a plurality of light-emitting regions separated by a non-light-emitting region, an organic light-emitting element disposed on each of the light-emitting regions, and a photoactive element disposed on the non-light-emitting region.

Abstract: Embodiments may disclose an organic light-emitting display device including a first substrate including a pixel area emitting light in a first direction, and a transmittance area that is adjacent to the pixel area and transmits external light; a second substrate facing the first substrate and encapsulating a pixel on the first substrate; an optical pattern array on the first substrate or the second substrate to correspond to the transmittance area, the optical pattern array being configured to transmit or block external light depending on the transmittance area according to a coded pattern; and a sensor array corresponding to the optical pattern array, the sensor array being arranged in a second direction that is opposite to the first direction in which the light is emitted, the second array receiving the external light passing through the optical pattern array.

Abstract: A display unit includes, on a substrate, a plurality of organic EL devices, and an insulating film provided in an inter-device region between the plurality of organic EL devices, the insulating film including a groove in a position between the organic EL devices adjacent to each other.

Abstract: There is provided a light emitting module. The light emitting module includes: a semiconductor light emitting element that emits light; and a plate-like optical wavelength conversion member that converts a wavelength of light emitted from the semiconductor light emitting element and emits light having the converted wavelength. The semiconductor light emitting element and the optical wavelength conversion member are directly bonded to each other.

Abstract: The present invention relates to an OLED display, and an OLED display according to an exemplary embodiment of the present invention includes a substrate member, an OLED including a first electrode formed on the substrate member, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer, and a cover layer formed on the second electrode and covering the OLED. The cover layer includes a cover main body and a corner-cube pattern formed on an opposite side of a side that faces the second electrode among both sides of the cover main body.

Abstract: Disclosed is materials design for prolonging the duration of the low relative dielectric constant of an organic siloxane film having a low relative dielectric constant. Specifically, in an organic siloxane film having a relative dielectric constant of not more than 2.1, the elemental ratio of carbon to silicon in the film is set to not less than 0.10 and not more than 0.55.

Abstract: A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing the protrusions, a thin protective ruthenium film is first deposited on the recessed surface portions of the substrate to protect these portions during the following protrusion removal. The protrusions on the surface receives very little or no ruthenium during the deposition. After the ruthenium film is formed, the protrusions are etched and removed by an etchant which only attacks the stainless steel but neutral to the ruthenium film. A contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor substrate, plural semiconductor columns arranged in a matrix form on the substrate, plural first conductive areas zonally formed in a column direction on the substrate between the semiconductor columns and functioning as word lines, plural second conductive areas formed at tops of the semiconductor columns, respectively, plural bit lines connecting the second conductive areas in a row direction, plural channel areas respectively formed in the semiconductor columns between the first and second conductive areas and contacting the first and second conductive areas, plural third conductive areas continuously formed via first insulating films above the substrate and opposite to the channel areas in the column direction between the semiconductor columns and functioning as control gates, and plural charge accumulation areas respectively formed via second insulating films at upper portions of the channel areas at a position higher than the third condu

Abstract: In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched between a common electrode film and pixel electrode films corresponding to respective pixels, and photo-charges generated in the photoelectric converting films are taken out through the pixel electrode films. In the solid-state image pickup device, a common electrode film for a first photoelectric converting film is used also as a common electrode film for a second photoelectric converting film, the first photoelectric converting film is stacked below the common electrode film, and the second photoelectric converting film is stacked above the common electrode film.

Abstract: A method of forming a pixel of an image sensor with reduced etching damage is disclosed. The method first includes forming a light sensitive element in a substrate. Then, a transfer gate is formed atop the substrate and adjacent to the light sensitive element. A protective layer, such as an anti-reflective coating, is then formed over the light sensitive element. A blanket oxide layer is formed over the protective layer and the transfer gate. Finally, the oxide layer is etched back to form a sidewall spacer the sidewall of a gate stack. The protective layer protects the surface of the light sensitive element from etching damage.

Abstract: Embodiments relate to a CMOS image sensor and a fabricating method thereof. In embodiments, a linear nitride layer formed on a semiconductor substrate may protect a gate oxide layer during a process of removing a silicide barrier layer, and may improve the performance of an CMOS image sensor.