Abstract: Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.

Abstract: An exemplary semiconductor device comprises a through silicon via penetrating a semiconductor substrate including a circuit pattern on one side of the substrate, a first doped layer formed in the other side, and a bump connected with the through silicon via.

Abstract: The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to provide a low barrier height Schottky junction between the drift layer and the Schottky layer.

Abstract: Elements of an edge termination structure, such as multiple concentric guard rings, are effectively doped regions in a drift layer. To increase the depth of these doped regions, individual recesses may be formed in a surface of the drift layer where the elements of the edge termination structure are to be formed. Once the recesses are formed in the drift layer, these areas about and at the bottom of the recesses are doped to form the respective edge termination elements.

Abstract: An alternating current (AC) light emitting assembly and an AC light emitting device are disclosed. The AC light emitting assembly includes a substrate; a rectifier unit comprising a plurality of rectifier components arranged in a Wheatstone Bridge, for rectifying an AC signal into a direct current (DC) signal, each of the rectifier components having a high breakdown voltage and a low forward voltage; a light emitting unit electrically connected to the rectifier unit and comprising a plurality of light emitting components formed on the substrate, for emitting light when receiving the DC signal outputted by the rectifier unit; and two conductive electrodes electrically connected to the rectifier unit for receiving and transmitting the AC signal to the rectifier unit. The AC light emitting device includes two stacked and electrically connected AC light emitting assemblies.

Abstract: This invention discloses a gallium nitride based semiconductor power device disposed in a semiconductor substrate. The power device comprises a termination area disposed at a peripheral area of the semiconductor power device comprises a termination structure having at least a guard ring disposed in a trench filled with doped gallium-based epitaxial layer therein.

Abstract: A light emitting diode device has a gallium and nitrogen containing substrate with a surface region with an epitaxial layer overlying the surface region. Preferably the device includes a first active region overlying the surface and configured to emit first electromagnetic radiation having a wavelength ranging from about 405 nm to 490 nm; a second active region overlying the surface and configured to emit second electromagnetic radiation having a wavelength ranging from about 491 nm to about 590 nm; and a third region overlying the surface region and configured to emit third electromagnetic radiation having a wavelength ranging from about 591 nm to about 700 nm. A p-type epitaxial layer covers the first, second, and third active regions.

Abstract: This disclosure discloses a light-emitting device comprising a substrate; and a plurality of rectifying units, comprising a first rectifying unit and a second rectifying unit, formed on the substrate for receiving and regulating an alternating current signal into a direct current signal. Each of the rectifying units comprises a contact layer and a schottky metal layer. The light-emitting device further comprises a plurality of light-emitting diodes receiving the direct current signal; and a first terminal provided on the substrate and covering the contact layer of the first rectifying unit and the schottky metal layer of the second rectifying unit.

Abstract: The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same.

Abstract: A manufacture method of a light emitting device is provided. Firstly, at least one circuit board is provided. A plurality of light emitting packages, a first undetermined power input end and a second undetermined power input end are disposed at the circuit board. The light emitting packages are electrically connected to the first undetermined power input end and the second undetermined power input end. Each of the first undetermined power input end and the second undetermined power input end has at least two first pads. The first pads of each of the first undetermined power input end and the second undetermined power input end are electrically isolated from each other. Next, the first undetermined power input end is selected to be a power input region for inputting an external power signal. Then, the first pads of the second undetermined power input end are electrically connected to each other.

Abstract: A Schottky device and a semiconductor process of making the same are provided. The Schottky device comprises a substrate, a deep well, a Schottky contact, and an Ohmic contact. The substrate is doped with a first type of ions. The deep well is doped with a second type of ions, and formed in the substrate. The Schottky contact contacts a first electrode with the deep well. The Ohmic contact contacts a second electrode with a heavily doped region with the second type of ions in the deep well. Wherein the deep well has a geometry gap with a width formed under the Schottky contact, the first type of ions and the second type of ions are complementary, and the width of the gap adjusts the breakdown voltage.

Abstract: This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further includes a sinker dopant region disposed at a depth in the semiconductor substrate extending substantially to the anode electrode disposed on the bottom surface of the semiconductor and the sinker dopant region covered by a buried Schottky barrier metal functioning as a Schottky anode.

Abstract: A monolithically integrated trench FET and Schottky diode includes a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer. A trench in the Schottky region includes a dielectric layer lining the trench sidewalls, and a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench. An interconnect layer electrically contacts the semiconductor layer in the Schottky region so as to form a Schottky contact with the semiconductor layer.

Abstract: A schottky diode of the trench variety which includes a trench termination having a thick insulation layer that is thicker than the insulation layer inside the trenches in its active region.

Abstract: One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.

Abstract: A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.

Abstract: A merged PN/Schottky diode is provided having a substrate of a first conductivity type and a grid of doped wells of the second conductivity type embedded in the substrate. A Schottky barrier metal layer makes a Schottky barrier contact with the surface of the substrate above the grid. Selected embedded wells in the grid make a Schottky barrier contact to the Schottky barrier metal layer, while most embedded wells do not. The diode forward voltage drop is reduced for the same diode area with reverse blocking benefits similar to a conventional JBS structure.

Abstract: The gate oxide in the trenches of a trench type Schottky device are formed by oxidizing a layer of polysilicon deposited in trenches of a silicon or silicon carbide substrate. A small amount of the substrate is also oxidized to create a good interface between the substrate and the oxide layer which is formed. The corners of the trench are rounded by the initial formation and removal of a sacrificial oxide layer.

Abstract: A high power light emitting device assembly with electro-static-discharge (ESD) protection ability and the method of manufacturing the same, the assembly comprising: at least two sub-mounts, respectively being electrically connected to an anode electrode and a cathode electrode, each being made of a metal of high electric conductivity and high thermal conductivity; a light emitting device, arranged on the sub-mounts; and an ESD protection die, sandwiched and glued between the sub-mounts, for enabling the high-power operating light emitting device to have good heat dissipating path while preventing the same to be damaged by transient power overload of static surge.

Abstract: An electronic system includes a three terminal device having a light emitting portion and a magnetically sensitive portion. The magnetically sensitive portion is for modulating light emission from the light emitting portion. The device is a spin valve transistor having a light-emitting quantum well in its collector. The device can convert a magnetic digital signal to both an electrical digital signal and an optical digital signal, wherein either or both of these signals can be provided as a device output. The magnetically sensitive portion of the device is formed of a pair of magnetically permeable layers. When the layers are aligned electron current can pass through with sufficient energy to reach a quantum well where they recombine, generating light. The device may be used to read a magnetic storage medium, such as a disk drive. Or it can be used to provide a display or a memory array composed of single device magnetic write, optical read memory cells.

Abstract: A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second doped region is disposed between the first doped region and the first conductive layer. The plurality of third doped regions are disposed in the second doped region. The first doped region of the semiconductor is heavily doped with a first type of dopant (e.g., phosphorous or arsenic). The second doped region is moderately doped with the first type of dopant. The plurality of third doped regions are moderately to heavily doped with a second type of dopant.

Abstract: Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the second photoresist layer and the blocking layer; exposing a predetermined portion of the second photoresist layer to form a head pattern of the T-type gate, and performing a heat treatment process to generate cross linking at a predetermined region of the second photoresist layer except for the head pattern of the T-type gate; performing an exposure process on an entire surface of the resultant structure, and then removing the exposed portion; and forming a metal layer of a predetermined thickness on an entire surface of the resultant structure, and then removing the first photoresist layer, the blocking layer, the predetermined region of the second photoresist layer in which the cross linking are generated, and the metal layer, whereby it is possible