Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

Abstract: Discussed is a display apparatus, including at least one horizontal semiconductor light emitting device having a first conductive electrode and a second conductive electrode; first and second wirings spaced apart from each other on a substrate, and electrically connected to the first and second conductive electrodes, respectively; a first bump disposed between the first wiring and the first conductive electrode; and a second bump disposed between the second wiring and the second conductive electrode, wherein at least one of the first and second bumps protrudes toward the other one from an edge of either one of the first and second wirings.

Abstract: Example embodiments relate to light emitting devices with adaptable glare classes. One example light emitting device includes a carrier. The light emitting device also includes a plurality of light sources disposed on the carrier. Additionally, the light emitting device includes a plurality of lenses disposed on the carrier and covering the plurality of light sources. Each lens of the plurality of lenses includes a lens portion and a base portion surrounding said lens portion. Further, the light emitting device includes a light shielding structure including a plurality of reflective barriers, each having an outer surface and a first reflective inner surface. The outer surface is oriented such that a portion of the light rays emitted by a first light source of the plurality of light sources is transmitted through a first lens of the plurality of lenses and through a first portion of the outer surface.

Abstract: An organic optoelectronic component includes an organic functional layer stack between a first electrode and a second electrode including a light-emitting layer formed to emit radiation during operation of the component; a coupling-out layer arranged above the first electrode and/or the second electrode which is in a beam path of the radiation of the light-emitting layer; and a protective layer above the coupling-out layer, wherein the coupling-out layer includes a structured layer and a planarization layer arranged thereabove and the structured layer has a structured surface structured at least in places, the planarization layer planarizes the structured surface of the structured layer, the protective layer cannot be removed without at least partially destroying the coupling-out layer, and adhesion of the structured layer to the planarization layer is smaller than adhesion of the protective layer to the planarization layer.

Abstract: The present application provides a manufacturing method of an organic light-emitting diode (OLED) panel and the OLED panel. Conventional OLED panels have problems like low aperture ratios and low capacitance. The present application overlaps a first conductive layer and a light shielding layer, a pixel electrode is connected to a source, and a planarization layer and a passivation layer in a capacitor area are removed. Therefore, an aperture ratio and capacitance of the OLED panel are greatly improved, the present application has a high degree of design freedom to be used in larger-sized OLED panels, and capacitance retention is improved.

Abstract: Methods for obtaining a free-standing thick (>5 ?m) epitaxial material layer or heterostructure stack and for transferring the thick epitaxial layer or stack to an arbitrary substrate. A thick epitaxial layer or heterostructure stack is formed on an engineered substrate, with a sacrificial layer disposed between the epitaxial layer and the engineered substrate. When the sacrificial layer is removed, the epitaxial layer becomes a thick freestanding layer that can be transferred to an arbitrary substrate, with the remaining engineered substrate being reusable for subsequent material layer growth. In an exemplary case, the material layer is a GaN layer and can be selectively bonded to an arbitrary substrate to selectively produce a Ga-polar or an N-polar GaN layer.

Abstract: A light-emitting element includes: a support substrate; a semiconductor stacked body disposed on the support substrate, the semiconductor stacked body including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; an insulating film including a first opening disposed above the first semiconductor layer and a plurality of second openings disposed above the second semiconductor layer; a first pad electrode disposed on the insulating film and electrically connected to the first semiconductor layer at the first opening; a second pad electrode disposed on the insulating film and electrically connected to the second semiconductor layer at the plurality of second openings; and a third pad electrode disposed on the insulating film and electrically insulated from the semiconductor stacked body.

Abstract: A display device includes a substrate, a first lower pattern disposed on the substrate, a second lower pattern disposed in a same layer as the first lower pattern and integrally formed with the first lower pattern, an etch stopper disposed on the second lower pattern, a power voltage line disposed on the first lower pattern, and a transfer pattern disposed on the etch stopper, connected to the power voltage line, and contacting the second lower pattern through a contact hole defined through the etch stopper.

Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

Abstract: A light emitting module including a mounting substrate, light emitting chips mounted on the mounting substrate, and pads, in which the light emitting chips include a first substrate, a first light emitting unit on a first surface of the first substrate, a second substrate spaced apart from the first substrate, and a second light emitting unit on a second surface of the second substrate, the first substrate includes a first side surface including a first modified surface, and the second substrate includes a second side surface facing the first side surface and including a second modified surface, the first modified surface includes first modified regions extended in a thickness direction and first ruptured regions disposed therebetween, the second modified surface includes second modified regions extended in the thickness direction and second ruptured regions disposed therebetween, and the first ruptured regions have the same width as the second ruptured regions.

Abstract: A mini light-emitting diode (mini-LED) backlight module, a manufacturing method thereof, and a display panel are provided. A plurality of backlight partitions are defined on a flexible substrate to improve brightness uniformity. A plurality of mini-LEDs arranged in an array in each of the backlight partitions are formed into parallel modules, so that a driving voltage and current of the backlight module can be within an appropriate range. The flexible substrate is further arranged with a first metal pattern, and signals can be independently input to each of the mini-LEDs through each of first sub-metal patterns, reducing metal trace resistance of the backlight module, and further improving brightness uniformity of the backlight module.

Abstract: A method for forming a light emitting element pattern according to an embodiment of the inventive concept includes forming a pattern layer having an opening on a target material, forming a light emitting element pattern on the target material in correspondence to the opening, and removing the pattern layer. Here, the pattern layer includes a first pattern layer disposed on the target material, a second pattern layer disposed on the first pattern layer, and a third pattern layer disposed on the second pattern layer. The second pattern layer has an undercut portion recessed from edges of the third pattern layer.

Abstract: A display device includes electrodes disposed on a substrate, extended in a first direction, and spaced apart from one another in a second direction intersecting the first direction, and light-emitting elements having ends disposed on the electrodes, wherein the electrodes include a first electrode having a first portion and a second portion, and a floating electrode adjacent to the first portion of the first electrode, and a width of the second portion is greater than a width of the first portion in the second direction.

Abstract: An array substrate, a manufacturing method thereof, and a display panel are provided. The array substrate includes an active layer, a metal contact layer, a gate insulating layer, a gate layer, a source/drain layer, and a pixel electrode, which are sequentially disposed on a substrate. An insulating area of the metal contact layer corresponds to a channel area of the active layer, and a conductive area of the metal contact layer is disposed at two sides of the insulating area. A source and a drain of the source/drain layer are individually connected to the conductive area. Therefore, a problem of relatively high electrical resistance of a conductorized IGZO area in conventional TFT devices can be solved.

Abstract: A display panel may include the following elements: a substrate including an opening area, a display area surrounding the opening area, and a first non-display area between the opening area and the display area; a data line positioned at a first side relative to the opening area; a first scan line; a second scan line; a first pixel connected to the data line and the first scan line; a second pixel connected to the data line and the second scan line; a first emission control line connected to the first pixel; a connecting section positioned on the first non-display area; a second emission control line connected to the second pixel and connected through the connecting section to the first emission control line; and an emission control driver configured to simultaneously provide emission control signals to the first emission control line and the second emission control line.

Abstract: A display device including a base substrate having a front surface and a rear surface, and including a first recess portion recessed from the front surface, a plurality of outer electrodes disposed on the base substrate, a light emitting device disposed in the first recess portion and configured to emit light in a direction away from the base substrate, the light emitting device including a light emitting structure electrically connected to the outer electrodes.

Abstract: A method can include obtaining characteristic data for a wafer. The characteristic data can correspond to the wafer in a processed state and can include a set of stress values of the wafer. The wafer can include a front side, a back side opposite the front side, and a set of regions. The set of stress values can include a first stress value corresponding to a first region. In the processed state, one or more front-side processes can be completed on the front side of the wafer. The method can include determining that the first stress value exceeds a stress threshold and generating a compensation map. The compensation map can identify one or more regions for forming one or more trenches. The method can include initiating, based on the compensation map, a formation of a first trench on the back side of the wafer in the first region.

Abstract: Methods for forming light emitting diodes (LEDs) that leverage cavity profiles and induced stresses to alter emitted wavelengths of the LEDs. In some embodiments, the method includes forming a cavity on a substrate where the cavity has a cavity profile that is configured to accept an emitter pixel structure for an LED, forming at least one passivation layer in the cavity, and forming at least one optical layer in the cavity on at least a portion of one of the at least one passivation layer. The at least one optical layer is configured to increase a lumen output of the emitter pixel structure. The method further includes forming the emitter pixel structure in the cavity on the at least one optical layer of the emitter pixel structure where the cavity profile is configured to adjust an emitted light wavelength of the emitter pixel structure.

Abstract: The invention relates to a lighting device (1) comprising an LED strip (100) with an elongated carrier (110) having a first carrier surface (111) and an opposite second carrier surface (112), a plurality of light-emitting diodes (120) arranged on the second carrier surface (112), and a light-transmissive encapsulant (130) encapsulating the plurality of light-emitting diodes (120). The lighting device (1) is arranged to be mounted to a mounting surface (210) of an object (200). For this purpose, it comprises a first attachment component (150) arranged on a first outer surface (141) of the LED strip (100) and a second attachment component (160) arranged on a second outer surface (142) of the LED strip (100). The first and second attachment components (150; 160) are for attaching the lighting device (1) in first and second mounting orientations, respectively.

Abstract: The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).

Abstract: An organic optoelectronic component includes an organic functional layer stack between a first electrode and a second electrode including a light-emitting layer formed to emit radiation during operation of the component; a coupling-out layer arranged above the first electrode and/or the second electrode which is in a beam path of the radiation of the light-emitting layer; and a protective layer above the coupling-out layer, wherein the coupling-out layer includes a structured layer and a planarization layer arranged thereabove and the structured layer has a structured surface structured at least in places, the planarization layer planarizes the structured surface of the structured layer, the protective layer cannot be removed without at least partially destroying the coupling-out layer, and adhesion of the structured layer to the planarization layer is smaller than adhesion of the protective layer to the planarization layer.

Abstract: A display device includes a substrate where a pixel is placed, and including an emission area and a wire area adjacent to the emission area; at least one wire formed on the substrate in the wire area; multiple insulation layers formed on the at least one wire; an anode electrode formed on the multiple insulation layers in the emission area; an emission layer formed on the anode electrode, and covering the anode electrode; and a cathode electrode formed on the emission layer, wherein the at least one wire formed on the substrate applies a signal to the pixel, the multiple insulation layers cover the at least one wire, and at least one of the multiple insulation layers is formed in a region of the substrate except at least one region or all regions of the emission area.

Abstract: A DUV light source module includes a print circuit board, an array of DUV light-emitting diodes (LEDs), a plurality of DUV LED drivers for driving the DUV light-emitting diodes, and a pair of electrical connectors for connecting the DUV LED drivers hence the DUV light-emitting diodes to a power source, and A DUV light source device includes the DUV light source module, a reflector, a heat sink, a heat pipe, a radiator and a fan.

Abstract: A display substrate, a method for manufacturing a display substrate and a display device are provided, and the display substrate includes: a base having a first surface, a second surface and a side surface, the base includes a display area and an epitaxial area; a driving functional layer in the display area and first binding electrodes in the epitaxial area on the first surface, the first binding electrodes are coupled with the driving functional layer; second binding electrodes located on the second surface and coupled with the first binding electrodes through side wirings; a portion of each side wiring is located on the side surface; a blocking wall on the first surface and in the epitaxial region, an orthographic projection of the blocking wall on the base at least passes through spacing regions between every two adjacent first binding electrodes along an arrangement direction of the first binding electrodes.

Abstract: The present disclosure provides an array substrate, a method for manufacturing the array substrate and a display device, and belongs to the field of display technology. The array substrate of the present disclosure includes: a base substrate; a light-blocking layer disposed on the base substrate; a thin film transistor disposed on the light-blocking layer; an organic light-emitting diode which is disposed on the light-blocking layer and has a first electrode coupled to a drain electrode of the thin film transistor; the light-blocking layer is provided with a plurality of scattering particles, and orthographic projections of at least a portion of the scattering particles on the base substrate are overlapped with an orthographic projection of the organic light-emitting diode on the base substrate, so as to scatter light emitted from the organic light-emitting diode.

Abstract: A light-emitting device includes: a substrate; n light-emitting elements (n being a natural number of 2 or more) mounted on the substrate, each comprising a first bonding member electrically connected to a first semiconductor layer, and a second bonding member electrically connected to a second semiconductor layer; and n+1 interconnects provided on the substrate, the n+1 interconnects comprising a first interconnect comprising a first external connection portion, a second interconnect comprising a second external connection portion, and a third interconnect comprising a third external connection portion. In a top-view, the first light-emitting element is located between a first side of the substrate and a second light-emitting element, and the second light-emitting element is located between a first light-emitting element and a second side.

Abstract: Provided are embodiments for a circuit comprising for performing hardware acceleration for elliptic curve cryptography (ECC). The circuit includes a code array comprising instructions for performing complex modular arithmetic; and a data array storing values corresponding to one or more complex numbers. The modular arithmetic unit includes a first multiplier and a first accumulation unit, a second multiplier and a second accumulation unit, and a third multiplier and a third accumulation unit, wherein the first, second, and third multiplier and accumulation units are cascaded and configured to perform hardware computation of complex modular operations. Also provided are embodiments of a computer program product and a method for performing the hardware acceleration of super-singular isogeny key encryption (SIKE) operations.

Abstract: Provided are a micro light source array for a display device, a display device including the micro light source array, and a method of manufacturing the display device. The micro light source array includes: a plurality of silicon sub-mounts provided on a substrate, each silicon sub-mount from among the plurality of silicon sub-mounts corresponding to a respective sub-pixel from among a plurality of sub-pixels of a display device, the plurality of silicon sub-mounts being separated from each other by a plurality of trenches; a plurality of light emitting device chips coupled to the plurality of silicon sub-mounts; and a plurality of driving circuits provided at the plurality of silicon sub-mounts.

Abstract: A polymeric substrate and a method of providing same includes providing a protection system of one or more layers on at least one first surface of the polymeric substrate, coating a spectrally controlling system on a surface of the protection system to provide an external surface, the spectrally controlling system comprising at least a light absorbing or a light reflecting layer, partially removing the spectrally controlling system from the external surface until reaching the at least one first surface of the protection system creating in the spectrally controlling system an area free of the light absorbing or light reflecting layer of the spectrally controlling system, and covering the area by depositing at least one or more substances in droplets.

Abstract: A display device is provided. The display device includes a pixel array including a plurality of pixels arranged in a matrix, a sensor under the pixel array, and a refracting layer over the pixel array. The pixel array includes a first region having a first resolution and overlapping the sensor and a second region having a second resolution higher than the first resolution and adjacent to the first region. The refracting layer includes a first refracting portion having a first refractive index and a second refracting portion having a second refractive index lower than the first refractive index.

Abstract: There is provided a light emitting device including: a substrate; a laminated structure provided on the substrate and having a plurality of first columnar portions and a plurality of second columnar portions; and a first electrode and a second electrode, in which the first columnar portion includes a first semiconductor layer, a second semiconductor layer having a conductivity type different from the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, light generated in the light emitting layer propagates through the plurality of first columnar portions and the plurality of second columnar portions, a height of the second columnar portion is equal to or larger than a sum of a thickness of the first semiconductor layer and a thickness of the light emitting layer, and is lower than a height of the first columnar portion, the first semiconductor layer is provided between the substrate and the light emitting layer, the first elec

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The disclosure discloses a display panel, a preparation method thereof and a display device. The display panel includes: a base substrate, a plurality of light emitting devices located on the base substrate, and a film packaging structure located on a side, away from the base substrate, of the light emitting devices, wherein the film packaging structure includes a first inorganic packaging film on the side, away from the base substrate, of the light emitting devices, a second inorganic packaging film on the side, away from the light emitting devices, of the first inorganic packaging film, and an organic packaging film between the first inorganic packaging film and the second inorganic packaging film; and the first inorganic packaging film is provided with convex structures at gaps among the light emitting devices, and the organic packaging film is disconnected at the convex structures.

Abstract: A display system and method are disclosed that includes an electronic display device and a backlight comprising a light-emitting array, a reflector adjacent to the light-emitting array, a diffuser opposite the reflector, a first brightness enhancing layer adjacent the diffuser, and an optical film in the backlight unit that includes at least one light conversion material or at least one light conversion material. The light conversion material is structured and configured to reduce hazardous blue light emissions between about 400 nm to about 500 nm. The disclosed display device can include a liquid crystal panel configured to control transmission of light from the backlight to a viewer. The display device also includes one or more optical films that incorporate one or more light conversion or light absorbing materials. The optical films can be positioned between the layers of the disclosed display device and give enhanced blue-light absorption to the display device.

Abstract: A light emitting diode (LED) pixel for a display including a substrate, a first LED stack disposed on the substrate, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and through-hole vias formed through the substrate, in which each of the first, second, and third LED stacks includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, and each of the through-hole vias is electrically connected to at least one of the first, second, and third LED stacks.

Abstract: A metal oxide semiconductor field effect transistor preferably fabricated with a silicon-on-insulator process has a first semiconductor region and a second semiconductor region in a spaced relationship thereto A body structure is defined by a channel segment between the first semiconductor region and the second semiconductor region, and a first extension segment structurally contiguous with the channel segment. A shallow trench isolation structure surrounds the first semiconductor region, the second semiconductor region, and the body structure, with a first extension interface being defined between the shallow trench isolation structure and the first extension segment of the body structure to reduce leakage current flowing from the second semiconductor region to the first semiconductor region through a parasitic path of the body structure.

Abstract: A transistor structure includes a layer of active material on a base. The base can be insulator material in some cases. The layer has a channel region between a source region and a drain region. A gate structure is in contact with the channel region and includes a gate electrode and a gate dielectric, where the gate dielectric is between the gate electrode and the active material. An electrical contact is on one or both of the source region and the drain region. The electrical contact has a larger portion in contact with a top surface of the active material and a smaller portion extending through the layer of active material into the base. The active material may be, for example, a transition metal dichalcogenide (TMD) in some embodiments.

Abstract: A method for increasing the bandwidth of an electroabsorption modulator (EAM) includes the following steps. First, a plurality of p-i-n active waveguides for the EAM are defined on a p-i-n optical waveguide forming an EAM having a shorter p-i-n active waveguide length. Then, the bandwidth of the EAM can be increased. Second, the high-impedance transmission lines are used in series to connect the EAM sections to reduce the microwave reflection and then increase the device bandwidth. Finally, the impedance-controlled transmission lines for the signal input and output can not only reduce the parasitic effects resulting from packaging, but also reduce the microwave reflection resulting from the impedance mismatch at the device input and load.

Abstract: A process for manufacturing an optoelectronic device having a diode matrix with semiconductor stacks involves providing a growth substrate having a support substrate coated with a nucleation layer defining a nucleation surface. A dielectric layer is deposited on the nucleation surface. A plurality of through-holes, extending to the nucleation surface, are formed in the dielectric layer. The nucleation layer, located in the through-holes, is etched to free up an upper surface of the support surface and expose a lateral surface of the nucleation layer forming a lateral nucleation surface. A dielectric region is formed extending in the support substrate such that, during a subsequent epitaxial growth stage, each first doped portion is formed especially from the lateral nucleation surface. In the through-holes and from the nucleation surface, the semiconductor stacks are epitaxially grown such that at least the first doped portions and active zones thereof are located in the through-holes.

Abstract: A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.

Abstract: A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.

Abstract: A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.

Abstract: The present disclosure involves a method of packaging a light-emitting diode (LED). According to the method, a group of metal pads and a group of LEDs are provided. The group of LEDs is attached to the group of metal pads, for example through a bonding process. After the LEDs are attached to the metal pads, each LED is spaced apart from adjacent LEDs. Also according to the method, a phosphor film is coated around the group of LEDs collectively. The phosphor film is coated on top and side surfaces of each LED and between adjacent LEDs. A dicing process is then performed to slice through portions of the phosphor film located between adjacent LEDs. The dicing process divides the group of LEDs into a plurality of individual phosphor-coated LEDs.

Abstract: Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.

Abstract: An organic light-emitting display apparatus includes a thin film transistor including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes, a third insulating layer covering the source and drain electrodes, the third insulating layer being an organic insulating layer, a pixel electrode including a semi-transparent metal layer and having an end located in a trench formed around the first insulating layer, a fourth insulating layer including an opening exposing a top surface of the pixel electrode, the fourth insulating layer being an organic insulating layer, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer.

Abstract: This invention is a photon-interactive Gaussian surface lens method means that converts incident photons from a single or a plurality of wide band gap semiconductor class light emitting diode dies, into a secondary emission of photons emanating from a composite photon transparent colloidal stationary suspension of quantum dots, high efficiency phosphors, a combination of quantum dots and high efficiency phosphors and nano-particles of metal, silicon or similar semiconductors from the IIIB and IVB Group of the Periodic Table and any nano-material and/or micro/nano spheres that responds to Rayleigh Scattering and/or Mie Scattering; and a plurality of quantum dots in communication with said nano-particles in said suspension. The apparatus and methods according to the present invention provides in improved narrow pass-band of red, green, and blue photon efficiency over phosphor based conversion.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a reflection film. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a bonding material. The bonding material integrates the fluorescent materials. The reflection film is partially provided on the fluorescent material layer and has a higher reflectance to the radiated light of the light emitting layer than to the radiated light of the fluorescent materials.

Abstract: A semiconductor device includes a first compound semiconductor material and a second compound semiconductor material on the first compound semiconductor material. The second compound semiconductor material comprises a different material than the first compound semiconductor material such that the first compound semiconductor material has a two-dimensional electron gas (2DEG). The semiconductor device further includes a buried field plate disposed in the first compound semiconductor material and electrically connected to a terminal of the semiconductor device. The 2DEG is interposed between the buried field plate and the second compound semiconductor material.

Abstract: A method for producing a substrate having an irregular concave and convex surface for scattering light includes: manufacturing a substrate having the irregular concave and convex surface; irradiating the concave and convex surface of the manufactured substrate with inspection light from a direction oblique to a normal direction and detecting returning light of the inspection light returned from the concave and convex surface by a light-receiving element provided in the normal direction of the concave and convex surface; and judging unevenness of luminance of the concave and convex surface by an image processing device based on light intensity of the returning light received. An organic EL element which includes a diffraction-grating substrate having an irregular concave and convex surface is produced with a high throughput.

Abstract: A light emitting device includes a substrate, a light emitting element, an additional light emitting element, a light reflecting resin member, an electrically conductive wire, an additional electrically conductive wire, and a sealing member. The substrate is provided with a conductor wiring. The light emitting element is mounted on the substrate. The electrically conductive wire electrically connects the conductor wiring and the light emitting element with at least a part of the electrically conductive wire being embedded in the light reflecting resin member. The additional electrically conductive wire electrically connects the light emitting element and the additional light emitting element, with the additional electrically conductive wire not being in contact with the light reflecting resin member. The sealing member is disposed in a region surrounded by the light reflecting resin member to cover the light emitting element.