Light Emitting Semiconductor Devices Having A Potential Or A Surface Barrier, Processes Or Apparatus Peculiar To The Manufacture Or Treatment Of Such Devices, Or Of Parts Thereof Patents (Class 257/E33.001)
  • Patent number: 9966356
    Abstract: A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: May 8, 2018
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Scott A. Mathews, Iyoel Beniam, Alberto Piqué
  • Patent number: 9685349
    Abstract: A method of forming and transferring shaped metallic interconnects, comprising providing a donor substrate comprising an array of metallic interconnects, using a laser system to prepare the metallic interconnects, forming shaped metallic interconnects, and transferring the shaped metallic interconnect to an electrical device. An electronic device made from the method of providing a donor ribbon, wherein the donor ribbon comprises an array of metal structures and a release layer on a donor substrate, providing a stencil to the metal structures on the donor substrate, applying a laser pulse through the donor substrate to the metal structures, and directing the metal structures to an electronic device.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: June 20, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Scott A. Mathews, Iyoel Beniam, Alberto Piqué
  • Patent number: 9040328
    Abstract: A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.
    Type: Grant
    Filed: May 4, 2014
    Date of Patent: May 26, 2015
    Assignee: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
    Inventors: Ya-Wen Lin, Shih-Cheng Huang, Po-Min Tu, Chia-Hung Huang, Shun-Kuei Yang
  • Patent number: 9035334
    Abstract: The present disclosure involves a method of packaging a light-emitting diode (LED). According to the method, a group of metal pads and a group of LEDs are provided. The group of LEDs is attached to the group of metal pads, for example through a bonding process. After the LEDs are attached to the metal pads, each LED is spaced apart from adjacent LEDs. Also according to the method, a phosphor film is coated around the group of LEDs collectively. The phosphor film is coated on top and side surfaces of each LED and between adjacent LEDs. A dicing process is then performed to slice through portions of the phosphor film located between adjacent LEDs. The dicing process divides the group of LEDs into a plurality of individual phosphor-coated LEDs.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: May 19, 2015
    Assignee: TSMC SOLID STATE LIGHTING LTD.
    Inventors: Chi-Xiang Tseng, Hsiao-Wen Lee, Min-Sheng Wu, Tien-Min Lin
  • Patent number: 9029887
    Abstract: Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: May 12, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Martin F. Schubert, Kevin Tetz
  • Patent number: 9029893
    Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a reflection film. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a bonding material. The bonding material integrates the fluorescent materials. The reflection film is partially provided on the fluorescent material layer and has a higher reflectance to the radiated light of the light emitting layer than to the radiated light of the fluorescent materials.
    Type: Grant
    Filed: March 21, 2013
    Date of Patent: May 12, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yosuke Akimoto, Akihiro Kojima, Miyoko Shimada, Hideyuki Tomizawa, Yoshiaki Sugizaki, Hideto Furuyama
  • Patent number: 9030108
    Abstract: This invention is a photon-interactive Gaussian surface lens method means that converts incident photons from a single or a plurality of wide band gap semiconductor class light emitting diode dies, into a secondary emission of photons emanating from a composite photon transparent colloidal stationary suspension of quantum dots, high efficiency phosphors, a combination of quantum dots and high efficiency phosphors and nano-particles of metal, silicon or similar semiconductors from the IIIB and IVB Group of the Periodic Table and any nano-material and/or micro/nano spheres that responds to Rayleigh Scattering and/or Mie Scattering; and a plurality of quantum dots in communication with said nano-particles in said suspension. The apparatus and methods according to the present invention provides in improved narrow pass-band of red, green, and blue photon efficiency over phosphor based conversion.
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: May 12, 2015
    Inventors: David Deak, Sr., David Deak, Jr.
  • Patent number: 9029850
    Abstract: An organic light-emitting display apparatus includes a thin film transistor including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes, a third insulating layer covering the source and drain electrodes, the third insulating layer being an organic insulating layer, a pixel electrode including a semi-transparent metal layer and having an end located in a trench formed around the first insulating layer, a fourth insulating layer including an opening exposing a top surface of the pixel electrode, the fourth insulating layer being an organic insulating layer, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: May 12, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yul-Kyu Lee, Kyung-Hoon Park, Sun Park, Yeong-Ho Song, Ji-Hoon Song
  • Patent number: 9024343
    Abstract: A light emitting device includes a substrate, a light emitting element, an additional light emitting element, a light reflecting resin member, an electrically conductive wire, an additional electrically conductive wire, and a sealing member. The substrate is provided with a conductor wiring. The light emitting element is mounted on the substrate. The electrically conductive wire electrically connects the conductor wiring and the light emitting element with at least a part of the electrically conductive wire being embedded in the light reflecting resin member. The additional electrically conductive wire electrically connects the light emitting element and the additional light emitting element, with the additional electrically conductive wire not being in contact with the light reflecting resin member. The sealing member is disposed in a region surrounded by the light reflecting resin member to cover the light emitting element.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: May 5, 2015
    Assignee: Nichia Corporation
    Inventors: Motokazu Yamada, Mototaka Inobe
  • Patent number: 9024356
    Abstract: A semiconductor device includes a first compound semiconductor material and a second compound semiconductor material on the first compound semiconductor material. The second compound semiconductor material comprises a different material than the first compound semiconductor material such that the first compound semiconductor material has a two-dimensional electron gas (2DEG). The semiconductor device further includes a buried field plate disposed in the first compound semiconductor material and electrically connected to a terminal of the semiconductor device. The 2DEG is interposed between the buried field plate and the second compound semiconductor material.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: May 5, 2015
    Assignee: Infineon Technologies Austria AG
    Inventors: Gilberto Curatola, Oliver Häberlen
  • Patent number: 9024305
    Abstract: An organic light emitting diode display includes a substrate, a planarization layer disposed on the substrate, a first electrode disposed on the planarization layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, wherein an uneven pattern is formed on a top surface of the planarization layer, the uneven pattern comprises a strip line having a plurality of thicknesses and widths, and a thickness of the strip line becomes smaller as a distance from a center portion of the first electrode becomes larger.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: May 5, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jae-Beom Choi, Hwa-Jin Noh, Hyoung-Min Park, Yong-Woo Park
  • Patent number: 9023668
    Abstract: A method for producing a substrate having an irregular concave and convex surface for scattering light includes: manufacturing a substrate having the irregular concave and convex surface; irradiating the concave and convex surface of the manufactured substrate with inspection light from a direction oblique to a normal direction and detecting returning light of the inspection light returned from the concave and convex surface by a light-receiving element provided in the normal direction of the concave and convex surface; and judging unevenness of luminance of the concave and convex surface by an image processing device based on light intensity of the returning light received. An organic EL element which includes a diffraction-grating substrate having an irregular concave and convex surface is produced with a high throughput.
    Type: Grant
    Filed: September 17, 2013
    Date of Patent: May 5, 2015
    Assignee: JX Nippon Oil & Energy Corporation
    Inventors: Yusuke Sato, Suzushi Nishimura
  • Patent number: 9012932
    Abstract: A white LED assembly includes a string of series-connected blue LED dice mounted on a substrate. The substrate has a plurality of substrate terminals. A first of the substrate terminals is coupled to be a part of first end node of the string. A second of the substrate terminals is coupled to be a part of an intermediate node of the string. A third of the substrate terminals is coupled to be a part of a second end node of the string. Other substrate terminals may be provided and coupled to be parts of corresponding other intermediate nodes of the string. A single contiguous amount of phosphor covers all the LED dice, but does not cover any of the substrate terminals. In one example, the amount of phosphor contacts the substrate and has a circular periphery. All the LEDs are mounted to the substrate within the circular periphery.
    Type: Grant
    Filed: May 22, 2014
    Date of Patent: April 21, 2015
    Assignee: Bridgelux, Inc.
    Inventors: Tao Xu, Michael Solomensky
  • Patent number: 9006771
    Abstract: An exemplary embodiment of the present invention provides an organic light emitting diode, comprising a substrate, a first electrode, an organic material layer, and a second electrode, wherein a trench comprising a concave part and a convex part is provided on the substrate, the first electrode is provided on the substrate on which the trench is formed by being deposited, and an auxiliary electrode is provided on the first electrode. The organic light emitting diode according to the exemplary embodiment of the present invention may increase surface areas of the first electrode and the auxiliary electrode formed on the substrate, thereby implementing a low resistance electrode. In addition, since a line width of the electrode is not increased, it is possible to prevent a decrease of an opening ratio of the organic light emitting diode.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: April 14, 2015
    Assignee: LG Chem, Ltd.
    Inventors: Jung-Hyoung Lee, Jung-Bum Kim
  • Patent number: 9006758
    Abstract: A light-emitting element includes a reflective electrode, a light-transmitting electrode disposed opposite the reflective electrode, a light-emitting layer emitting blue light disposed between the reflective electrode and the light-transmitting electrode, and a functional layer disposed between the reflective electrode and the light-emitting layer. The optical thickness of the functional layer is no less than 428.9 nm and no more than 449.3 nm.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: April 14, 2015
    Assignee: Panasonic Corporation
    Inventor: Kazuhiro Yoneda
  • Patent number: 9000466
    Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: April 7, 2015
    Assignee: Soraa, Inc.
    Inventors: Rafael Aldaz, Aurelien David, Daniel F. Feezell, Thomas M. Katona, Rajat Sharma
  • Patent number: 9000443
    Abstract: An object is to provide a light-emitting device or a flexible light-emitting device having low surface temperature, a long lifetime, and high reliability. Another object is to provide a simple method of manufacturing the light-emitting device or the flexible light-emitting device. Provided is a light-emitting device or a flexible light-emitting device which includes: a substrate having a light-transmitting property with respect to visible light; a first adhesive layer provided over the substrate; an insulating layer located over the first adhesive layer; a light-emitting element comprising a first electrode formed over the insulating layer, a second electrode facing the first electrode, and a layer including an organic compound having a light-emitting property between the first electrode and the second electrode, a second adhesive layer formed over the second electrode; a metal substrate provided over the second adhesive layer; and a heat radiation material layer formed over the metal substrate.
    Type: Grant
    Filed: January 13, 2011
    Date of Patent: April 7, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kaoru Hatano
  • Patent number: 9000549
    Abstract: Thin film photovoltaic devices are provided. The device includes a transparent substrate; a transparent conductive oxide layer on the transparent substrate; an n-type window layer on the transparent conductive oxide layer, an absorber layer on the n-type window layer, and a back contact layer on the absorber layer. The n-type window layer includes a plurality of nanoparticles spatially distributed within a medium, with the nanoparticles comprising cadmium sulfide. In one embodiment, the medium has an optical bandgap that is greater than about 3.0 eV (e.g., includes a material other than cadmium sulfide). Methods are also provided for such thin film photovoltaic devices.
    Type: Grant
    Filed: November 14, 2012
    Date of Patent: April 7, 2015
    Assignee: First Solar, Inc.
    Inventors: Robert Dwayne Gossman, Scott Daniel Feldman-Peabody, Bastiaan Arie Korevaar
  • Patent number: 9000442
    Abstract: To simply provide a flexible light-emitting device with long lifetime. To provide a flexible light-emitting device with favorable display characteristics, high yield, and high reliability without display unevenness.
    Type: Grant
    Filed: January 13, 2011
    Date of Patent: April 7, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kaoru Hatano, Takaaki Nagata, Nozomu Sugisawa, Tatsuya Okano, Akihiro Chida, Tatsunori Inoue
  • Patent number: 9000475
    Abstract: A light-emitter with a bank having an upper surface located at a height of h0 with reference to the top surface of the base layer and a circumferential surface facing the aperture in the bank. When h denotes a height of a given point on the circumferential surface with reference to the top surface and x denotes a distance, measured in a direction along the top surface, of the given point from a boundary between the upper and circumferential surface, a second-order derivative of h with respect to x is continuous at a point corresponding to the boundary, h being smaller than h0. An inflection point of the second-order derivative is located at a height of 0.9h0 or greater with reference to the top surface, and a top surface of the functional layer is in contact with the circumferential surface at a contact point near the inflection point.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: April 7, 2015
    Assignee: Panasonic Corporation
    Inventor: Yasuhiro Sekimoto
  • Patent number: 8994052
    Abstract: A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: March 31, 2015
    Assignee: Epistar Corporation
    Inventors: Chien-Fu Shen, Chao-Hsing Chen, Chien-Fu Huang, Shih-I Chen, Chiu-Lin Yao, Chia-Liang Hsu, Chen Ou
  • Patent number: 8994053
    Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: March 31, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Patent number: 8987026
    Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: March 24, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naoharu Sugiyama, Tomonari Shioda, Shigeya Kimura, Koichi Tachibana, Shinya Nunoue
  • Patent number: 8981392
    Abstract: There is provided a light emitting device package including: a package substrate; a blue light emitting device and a green light emitting device mounted on the package substrate; a flow prevention part formed on the package substrate and substantially enclosing the blue light emitting device; and a wavelength conversion part including a red wavelength conversion material and formed on a region defined by the flow prevention part to cover the blue light emitting device, so that white light having a high degree of color reproducibility may be emitted thereby.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: March 17, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Ho Young Song
  • Patent number: 8981404
    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack and a mirror. The semiconductor layer stack has an active layer for generating electromagnetic radiation. The minor is arranged on an underside of the semiconductor layer stack. The mirror has a first region and a second region, the first region containing silver and the second region containing gold. A method of producing such a semiconductor chip is also defined.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: March 17, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Martin Rudolf Behringer, Christoph Klemp, Christoph Rupprich
  • Patent number: 8969893
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a non-periodic light extraction pattern, and a phosphor layer. The light emitting structure includes a first conductive type semiconductor layer, a second conductive type semiconductor layer over the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The non-periodic light extraction pattern is disposed over the light emitting structure. The phosphor layer is disposed over the non-periodic light extraction pattern. The phosphor layer fills at least one portion of the non-periodic light extraction pattern.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: March 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sun Kyung Kim
  • Patent number: 8963168
    Abstract: Many thousands of micro-LEDs (e.g., 25 microns per side) are deposited on a substrate. Some of the LEDs are formed to emit a peak wavelength of 450 nm (blue), and some are formed to emit a peak wavelength of 490 nm (cyan). A YAG (yellow) phosphor is then deposited on the LEDs, or a remote YAG layer is used. YAG phosphor is most efficiently excited at 450 nm and has a very weak emission at 490 nm. The two types of LEDs are GaN based and can be driven at the same current. The ratio of the two types of LEDs is controlled to achieve the desired overall color emission of the LED lamp. The blue LEDs optimally excite the YAG phosphor to produce white light having blue and yellow components, and the cyan LEDs broaden the emission spectrum to increase the CRI of the lamp while improving luminous efficiency. Other embodiments are described.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: February 24, 2015
    Assignee: Nthdegree Technologies Worldwide Inc.
    Inventor: Reuben Rettke
  • Patent number: 8963138
    Abstract: An organic light emitting display device including: a substrate; a plurality of first electrodes formed over the substrate; a pixel defining layer (PDL) formed over the substrate, and separating the plurality of first electrodes from one another when viewed in a thickness direction of the display device; a plurality of light emitting layer portions, each of which is formed over one of the plurality of first electrodes; at least a second electrode formed over the plurality of light emitting layer portions; and a filter unit formed over the at least a second electrode. The filter unit includes a black matrix layer having an opening and a plurality of color filters formed over the black matrix layer, and each color filter comprising at least one embossed portion formed over one of the plurality of openings.
    Type: Grant
    Filed: January 11, 2013
    Date of Patent: February 24, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jae-Ik Lim, Min-Woo Kim, Hae-Yun Choi, Gee-Bum Kim
  • Patent number: 8958664
    Abstract: A semiconductor optical modulator includes a substrate; and a mesa portion having a first cladding layer disposed on the substrate, a core layer disposed on the first cladding layer, and a second cladding layer disposed on the core layer, the first cladding layer having a first conductivity type, the second cladding layer having a second conductivity type reverse to the first conductivity type. The core layer includes a first multi quantum well structure made from a first conductivity type semiconductor layer and a second multi quantum well structure made from an i-type semiconductor layer in which no impurity is intentionally doped. The second multi quantum well structure is disposed on the first cladding layer. The first multi quantum well structure is disposed on the second multi quantum well structure. The second cladding layer is disposed on the first multi quantum well structure.
    Type: Grant
    Filed: February 25, 2013
    Date of Patent: February 17, 2015
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Naoya Kono
  • Patent number: 8951817
    Abstract: The substrate that is used to support the growth of the LED structure is used to support the creation of a superstructure above the LED structure. The superstructure is preferably created as a series of layers, including conductive elements that forma conductive path from the LED structure to the top of the superstructure, as well as providing structural support to the light emitting device. The structure is subsequently inverted, such that the superstructure becomes the carrier substrate for the LED structure, and the original substrate is thinned or removed. The structure is created using materials that facilitate electrical conduction and insulation, as well as thermal conduction and dissipation.
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: February 10, 2015
    Assignee: Koninklijke Philips N.V.
    Inventor: Daniel Alexander Steigerwald
  • Patent number: 8941128
    Abstract: Embodiments of the present disclosure are directed towards passivation techniques and configurations for a flexible display. In one embodiment, a flexible display includes a flexible substrate, an array of display elements configured to emit or modulate light disposed on the flexible substrate, and a passivation layer including molecules of silicon (Si) bonded with oxygen (O) or nitrogen (N), the passivation layer being disposed on the array of display elements to protect the array of display elements from environmental hazards.
    Type: Grant
    Filed: November 21, 2012
    Date of Patent: January 27, 2015
    Assignee: Intel Corporation
    Inventors: Ravi Pillarisetty, Sairam Agraharam, John S. Guzek, Christopher J. Jezewski
  • Patent number: 8937321
    Abstract: The present invention is directed to a vertical-type luminous device and high through-put methods of manufacturing the luminous device. These luminous devices can be utilized in a variety of luminous packages, which can be placed in luminous systems. The luminous devices are designed to maximize light emitting efficiency and/or thermal dissipation. Other improvements include an embedded zener diode to protect against harmful reverse bias voltages.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: January 20, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: YuSik Kim
  • Patent number: 8933476
    Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a first bonding material. The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials and a second bonding material. The scattering materials are configured to scatter radiated light of the light emitting layer. The second bonding material integrates the scattering materials.
    Type: Grant
    Filed: March 21, 2013
    Date of Patent: January 13, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yosuke Akimoto, Akihiro Kojima, Miyoko Shimada, Hideyuki Tomizawa, Yoshiaki Sugizaki, Hideto Furuyama
  • Patent number: 8928005
    Abstract: A semiconductor light-emitting device that is high in luminous efficiency and that emits light which is high in color rendering property includes a semiconductor light-emitting element that emits blue light; a green fluorescent substance that absorbs the blue light and emits green light; and an orange fluorescent substance that absorbs the blue light and emits orange light, fluorescence emitted by the green fluorescent substance and the orange fluorescent substance having an emission spectrum that has a peak wavelength of not less than 540 nm and not more than 565 nm and that satisfies the relation of 0.70>PI(90)/PI(MAX)>0.55, where PI(MAX) represents an emission intensity at the peak wavelength, and PI(90) represents an emission intensity at a wavelength 90 nm longer than the peak wavelength.
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: January 6, 2015
    Assignees: Sharp Kabushiki Kaisha, Independent Administrative Institution, National Institute for Materials Science
    Inventors: Kenichi Yoshimura, Kohsei Takahashi, Hiroshi Fukunaga, Naoto Hirosaki
  • Patent number: 8927961
    Abstract: Disclosed is a semiconductor light emitting device including a first conductive semiconductor layer including an n-type dopant, an active layer, and a second to sixth conductive semiconductor layers including a p-type dopant. The third to sixth conductive semiconductor layers includes an AlGaN-based semiconductor on the active layer, and the second conductive semiconductor layer includes a GaN-based semiconductor layer on the sixth conductive semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor. The sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm.
    Type: Grant
    Filed: August 7, 2014
    Date of Patent: January 6, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyong Jun Kim
  • Patent number: 8916401
    Abstract: A method for fabricating a semiconductor light emitting device is provided. The method includes forming a semiconductor light emitting portion including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The method also includes forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer; and forming an insulator film covering the semiconductor light emitting portion, such that a first portion of the insulator film is surrounded by the second conductivity-type semiconductor side electrode and is separated from the second conductivity-type semiconductor side electrode by a separation area.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: December 23, 2014
    Assignee: Nichia Corporation
    Inventor: Hiroaki Matsumura
  • Patent number: 8901581
    Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes first and second conductive semiconductor layers having an active layer formed therebetween, and first and second electrodes formed on the first and second layers. A first insulation layer is formed on portions of the light emitting cell, while a second insulation layer entirely covers at least one light emitting cell. A method of manufacturing the semiconductor light emitting device, and a light emitting module and an illumination apparatus including the semiconductor light emitting device are also provided.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: December 2, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chan Mook Lim, Jong Ho Lee, Jin Hwan Kim, Jin Hyun Lee, Su Hyun Jo, Hae Yeon Hwang
  • Patent number: 8890306
    Abstract: A light-emitting diode includes a carrier with a mounting face and includes a metallic basic body and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face, wherein an outer face of the metallic basic body includes the mounting face, the at least two light-emitting diode chips connect in parallel with one another, the at least two light-emitting diode chips are embedded in a reflective coating, the reflective coating covering the mounting face and side faces of the light-emitting diode chips, and the light-emitting diode chips protrude with their radiation exit surfaces out of the reflective coating, and the radiation exit surfaces face away from the carrier.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: November 18, 2014
    Assignee: OSRAM Opto Semiconductor GmbH
    Inventors: Joachim Reill, Georg Bogner, Stefan Grötsch
  • Patent number: 8889448
    Abstract: Provided are a light-emitting element and a method of fabricating the same. The light-emitting element includes: a first pattern including conductive regions and non-conductive regions. The non-conductive regions are defined by the conductive regions. The light-emitting element also include an insulating pattern including insulating regions and non-insulating regions which correspond respectively to the conductive regions and non-conductive regions. The non-insulating regions are defined by the insulating regions. The light-emitting element further includes a light-emitting structure interposed between the first pattern and the insulating pattern. The light-emitting structure includes a first semiconductor pattern of a first conductivity type, a light-emitting pattern, and a second semiconductor pattern of a second conductivity type which are stacked sequentially. The light-emitting element also includes a second pattern formed in the non-insulating regions.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: November 18, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Yu-Sik Kim
  • Patent number: 8878199
    Abstract: A white LED lighting device driven by a pulse current is provided, which consists of blue, violet or ultraviolet LED chips, blue afterglow luminescence materials A and yellow luminescence materials B. Wherein the weight ratio of the blue afterglow luminescence materials A to the yellow luminescence materials B is 10-70 wt %: 30-90 wt %. The white LED lighting device drives the LED chips with a pulse current having a frequency of not less than 50 Hz. Because of using the afterglow luminescence materials, the light can be sustained when an excitation light source disappears, thereby eliminating the influence of LED light output fluctuation caused by current variation on the illumination. At the same time, the pulse current can keep the LED chips being at an intermittent work state, so as to overcome the problem of chip heating.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: November 4, 2014
    Assignee: Sichuan Sunfor Light Co., Ltd.
    Inventors: Ming Zhang, Kun Zhao, Dong-ming Li
  • Patent number: 8878213
    Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: November 4, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naoharu Sugiyama, Tomonari Shioda, Shigeya Kimura, Koichi Tachibana, Shinya Nunoue
  • Patent number: 8877562
    Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: November 4, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Hyung Kim, Cheol-soo Sone, Jong-in Yang, Sang-yeob Song, Si-hyuk Lee
  • Patent number: 8871547
    Abstract: A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: October 28, 2014
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Wen-Huang Liu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Trung Tri Doan
  • Patent number: 8872169
    Abstract: An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: October 28, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Kumaki, Satoshi Seo
  • Patent number: 8866204
    Abstract: A method for fabricating a finFET device having an insulating layer that insulates the fin from a substrate is described. The insulating layer can prevent leakage current that would otherwise flow through bulk semiconductor material in the substrate. The structure may be fabricated starting with a bulk semiconductor substrate, without the need for a semiconductor-on-insulator substrate. Fin structures may be formed by epitaxial growth, which can improve the uniformity of fin heights in the devices.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: October 21, 2014
    Assignees: STMicroelectronics, Inc., International Business Machines Corporation
    Inventors: Qing Liu, Junli Wang
  • Patent number: 8866173
    Abstract: A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; an electrode on the light emitting structure; a protection layer under a peripheral region of the light emitting structure; and an electrode layer under the light emitting structure, wherein the protection layer comprises a first layer, a second layer, and a third layer, wherein the first layer comprises a first metallic material, and wherein the second layer is disposed between the first layer and the third layer, the second layer has an insulating material or a conductive material.
    Type: Grant
    Filed: July 18, 2012
    Date of Patent: October 21, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Patent number: 8859315
    Abstract: A semiconductor device comprises a substrate; a conductive layer deposited on a substrate, the conductive layer being patterned to include a first pattern, the first pattern including a major surface and a plurality of grids defined in the major surface, the major surface including first lines and a connecting portion, wherein the connecting portion is connected to an electrode; and an epitaxial layer disposed on the conductive layer, covering the grids and the first line between the adjacent grids.
    Type: Grant
    Filed: October 29, 2012
    Date of Patent: October 14, 2014
    Assignee: BYD Company Limited
    Inventors: Xilin Su, Hongpo Hu, Chunlin Xie, Wang Zhang, Qiang Wang
  • Patent number: 8847267
    Abstract: The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding
    Type: Grant
    Filed: August 7, 2008
    Date of Patent: September 30, 2014
    Assignee: Korea Photonics Technology Institute
    Inventors: Sang Mook Kim, Jong Hyeob Baek, Gang Ho Kim, Jung-In Kang, Hong Seo Yom, Young Moon Yu
  • Patent number: 8833294
    Abstract: A thin film deposition apparatus that may prevent a patterning slit sheet from sagging and increase a tensile force of the patterning slit sheet, and a method of manufacturing an organic light-emitting display device using the same.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: September 16, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Myung-Ki Lee, Sung-Bong Lee, Myong-Hwan Choi
  • Patent number: RE45217
    Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode. A method of fabricating a semiconductor light emitting device, and which includes forming a light emitting layer on the first type semiconductor layer; forming a second type semiconductor layer on the light emitting layer; forming a first transparent electrode on the second type semiconductor layer, the first transparent electrode having holes per a certain region to thereby expose the second type semiconductor layer; forming a second transparent electrode on the first transparent electrode; forming a first pad on the second transparent electrode; and forming a second pad over the first type semiconductor layer.
    Type: Grant
    Filed: September 16, 2008
    Date of Patent: October 28, 2014
    Assignee: LG Electronics Inc.
    Inventors: Jun-Seok Ha, Jun-Ho Jang, Jae-Wan Choi, Jung-Hoon Seo