Abstract: According to one embodiment, a display device includes a first insulating layer, a second insulating layer, a pixel electrode, a light emitting layer, an opposite electrode and a pixel circuit. The second insulating layer is provided on the first insulating layer. The pixel electrode is provided on the second insulating layer and light-transmissive. The light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the light emitting layer. The circuit is provided between the first insulating layer and the second insulating layer, includes an interconnect supplied with a drive current, and is configured to supply the drive current to the pixel electrode. The circuit is connected to the pixel electrode. The interconnect has a first region overlaying the pixel electrode when projected onto a plane parallel to the first insulating layer. The interconnect has an opening in the first region.

Abstract: An organic light emitting element including: a first electrode; a bump partially covering an end of the first electrode and having an island shape, which has a thickness larger than a thickness of the first electrode; an organic emission layer on the first electrode and the bump; and a second electrode on the organic emission layer.

Abstract: An exemplary light emitting diode includes a substrate and a first undoped gallium nitride (GaN) layer formed on the substrate. The first undoped GaN layer defines a groove in an upper surface thereof. A distributed Bragg reflector is formed in the groove of the first undoped GaN layer. The distributed Bragg reflector includes a plurality of second undoped GaN layers and a plurality of air gaps alternately stacked one on the other. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the distributed Bragg reflector and the first undoped GaN layer. A p-type electrode and an n-type electrode are electrically connected with the p-type GaN layer and the n-type GaN layer, respectively. A method for manufacturing plural such light emitting diodes is also provided.

Abstract: An organic light emitting display apparatus including sub pixels, each of the sub pixels including: first and second electrodes, the second electrode extending over the first electrode; and an intermediate layer disposed between the first and second electrodes, the intermediate layer including an emission layer, wherein a first portion of the first electrode, the second electrode, and the intermediate layer extends within a weak resonance region, the weak resonance region being configured to induce a first resonance of light generated by the emission layer between the first and second electrodes, and a second portion of the first electrode, the second electrode, and the intermediate layer extends within a strong resonance region, the strong resonance region being configured to induce a second resonance of light generated by the emission layer between the first and second electrodes, the second resonance being stronger than the first resonance.

Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

Abstract: A method of making an electronic device comprising a double bank well-defining structure, which method comprises: providing an electronic substrate; depositing a first insulating material on the substrate to form a first insulating layer; depositing a second insulating material on the first insulating layer to form a second insulating layer; removing a portion of the second insulating layer to expose a portion of the first insulating layer and form a second well-defining bank; depositing a resist on the second insulating layer and on a portion of the exposed first insulating layer; removing the portion of the first insulating layer not covered by the resist, to expose a portion of the electronic substrate and form a first well-defining bank within the second well-defining bank; and removing the resist. The method can provide devices with reduced leakage currents.

Abstract: It is an object of the present invention to provide a light emitting element that realizes a high contrast. It is another object of the present invention to provide a light emitting device that realizes a high contrast by using the light emitting element with an excellent contrast. The light emitting element has a layer containing a light emitting substance interposed between a first electrode and a second electrode, and the layer containing the light emitting substance includes a light emitting layer, a layer containing a first organic compound, and a layer containing a second organic compound. The first electrode has a light-transmitting property, and the layer containing the first organic compound and the layer containing the second organic compound are interposed between the second electrode and the light emitting layer. Furthermore, color of the first organic compound and color of the second organic compound are complementary.

Abstract: A white organic light emitting device, with improved color shift characteristics and improved efficiency according to viewing angle changes by controlling conditions for designing an optical path in organic material layers between a cathode and an anode or adjusting interior or exterior thicknesses of the organic material layers, has a structure including a first electrode and layers between the first electrode and a second electrode satisfies an optical path condition represented by the following equation n a ? d a ? + ? j ? ? n j w ? d j w ? = 1.85 ? 2.15 with respect to emissions of the first and second stacks, where ? is an emission peak wavelength of the first stack or the second stack, na and da are a refractive index and a thickness of a transparent electrode selected from the first and second electrode, and nw and dw are a refractive index and a thickness of any one of the layers disposed between the first electrode and the second electrode, respectively.

Abstract: The invention relates to an organic light-emitting diode, known under the abbreviation OLED, and to a method for the production of such an organic light-emitting diode. According to the invention, an OLED or organic light-emitting diode having an emitter layer (5) is produced, said emitter layer emitting white light in particular. The emitter layer (5) is arranged within a lossy, optical resonator. The optical path length between the two reflecting layers of the resonator determines the color of the light emitting from the optical resonator and, consequently, from the light-emitting diode. In order to be able to create a variety of colors, there must be different optical path lengths between the two reflecting surfaces. The correspondingly different distances can be produced in only one work step, in contrast to the prior art, by a photolithographic method.

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract: An organic light emitting diode (OLED) display includes: a substrate; a first electrode on the substrate; a first emission layer on the first electrode; a second emission layer on the first emission layer; a second electrode on the second emission layer; and a light emitting assistance layer selectively positioned between the first emission layer and the second emission layer.

Abstract: A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided.

Abstract: A light emitting element with a high contrast is realized. A light emitting device with a high contrast is achieved by using the light emitting element with an excellent contrast. The light emitting element has a layer containing a light emitting substance interposed between a first electrode and a second electrode, and the layer containing the light emitting substance includes a light emitting layer, a layer containing a first organic compound, and a layer containing a second organic compound. The first electrode has a light-transmitting property, and the layer containing the first organic compound and the layer containing the second organic compound are interposed between the second electrode and the light emitting layer. Furthermore, color of the first organic compound and color of the second organic compound are complementary.

Abstract: An object of the present invention is to provide an organic light emitting element where light emitted from the light emitting layer is efficiently emitted to the outside, and thus, the efficiency of light emission is higher. The present invention provides an organic light emitting element where a first reflective electrode 22, an electron transport layer 23, a light emitting layer 24, a hole transport layer 25, a hole injection layer 26 and a second transparent electrode 27 are formed on a glass substrate 21, and a light extraction layer 28 having an average index of refraction of 1.4 made of titanium particles having an index of refraction of 2.6 and an average particle diameter of 150 nm and silica sol.

Abstract: An organic light-emitting display and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the organic light-emitting display includes: i) a pixel electrode disposed on a substrate, ii) an opposite electrode disposed opposite to the pixel electrode, iii) an organic emission layer disposed between the pixel electrode and the opposite electrode; a light-scattering portion disposed between the substrate and the organic emission layer, including a plurality of scattering patterns for scattering light emitted from the organic emission layer in insulating layers having different refractive indexes. The display may further include a plurality of light absorption portions disposed between the light-scattering portion and the organic emission layer to correspond to the scattering patterns.

Abstract: An LED lamp (A1) includes a plurality of LEDs (2), a retainer (1) on which the light LEDs (2) are mounted, and a wiring pattern formed on the retainer (1) and electrically connected to the LEDs (2). The retainer (1) includes a plurality of substrates (11, 12, 15). Of the plurality of substrates (11, 12, 15), two adjacent substrates (11, 12) are connected to each other by a pair of bendable connection members (32a, 32b). The two substrates (11, 12) are arranged in such a manner that their normal line directions differ from each other.

Abstract: An organic light emitting device enables improvement on the loss of optical extraction efficiency due to total reflection and optical waveguide effects. The organic light emitting device has a structure wherein a first electrode, an organic substance layer, and a second electrode are sequentially laminated on a substrate, a random nano structure having a fine pattern of a peaks-and-valleys shape is formed between a substrate and a first electrode to extract any light that is wasted due to total reflection and an optical waveguide mode to the outside of the substrate so that an organic light emitting device with improved external quantum efficiency can be realized, and optical extraction patterns and color changes due to visual field angles can also be improved.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern.

Abstract: It is presented an organic LED device 101 with, when in use, a predetermined pattern on its light emitting parts. The organic LED device 101 comprises an anode 105, a cathode 103, and an organic light emitting layer 107. The organic light emitting layer 107 is configured to emit light, wherein the organic light emitting layer 107 comprises portion with reduced light emitting properties, the portions of the organic light emitting layer 107 having been irradiated by light with a wavelength in the absorption band of the organic light emitting layer 107, the light intensity being below an ablation threshold of the cathode layer 103, the anode layer 105 and the organic light emitting layer 107 of the organic LED device 101, reducing the light emitting properties of the irradiated portions of the organic light emitting layer 107. It is also presented a method for reducing the light emitting properties of the organic LED device 101.

Abstract: An organic light emitting diode display is disclosed. The display includes: a substrate; a first electrode positioned on the substrate; an organic emission layer positioned on the first electrode; a second electrode positioned on the organic emission layer; and a semi-transmissive layer positioned between the substrate and the first electrode and having a plurality of refractive layers having different refractive indices.

Abstract: Provided is an organic electroluminescence display apparatus capable of reducing a chromaticity difference caused by light emission from an organic layer including an emission layer having the same color, which is continuously formed over two sub-pixels included in a pixel. The organic electroluminescence display apparatus includes: a substrate; and multiple organic electroluminescence devices which are stacked on the substrate, each of which includes electrodes and an organic layer sandwiched by the electrodes in which first organic layer and a second organic layer are arranged side by side in an emission region corresponding to a pixel formed on the substrate and a third organic layer is stacked over the first organic layer and the second organic layer through an intermediate electrode. The third organic layer has an emission spectrum peak wavelength which is longer than an emission spectrum peak wavelength of at least one of the first organic layer and the second organic layer.

Abstract: An organic light-emitting display includes a substrate including a pixel region and a transistor region; a first transparent electrode and a second transparent electrode formed over the pixel region and the transistor region of the substrate, respectively; a gate electrode formed over the second transparent electrode; a gate insulating film formed over the gate electrode; a semiconductor layer formed over the gate insulating film; a source and drain electrode having an end connected to the semiconductor layer and the other end connected to the first transparent electrode; a pixel defining layer disposed over the source and drain electrode to cover the source and drain electrode and having an opening disposed over the first transparent electrode; a light-blocking layer formed over the pixel defining layer; and an organic light-emitting layer formed over the first transparent electrode.

Abstract: A display device includes an array of pixels including a plurality of organic EL elements each having a pair of electrodes and an organic compound layer including a light-emitting layer and disposed between the pair of electrodes and includes a protective layer disposed on the plurality of the organic EL elements. The protective layer has a first protective layer made of an inorganic material, a second protective layer made of a resin material and disposed on the first protective layer, and a third protective layer made of an inorganic material and disposed on the second protective layer. The second protective layer includes lenses for diverging at least part of light emitted from the light-emitting layer. The lenses have an elongated concave shape.

Abstract: Blue organic EL elements, which have a shorter lifetime and lower luminance characteristics than green and red ones, have had a problem: particularly when blue elements are used in a light-emitting device capable of modulating light emission colors, light significantly attenuates and characteristics further deteriorates. A dielectric mirror which is selective in wavelength is provided between organic EL elements, and the number of times especially blue light emission from an organic EL element is transmitted through an electrode having a light-transmitting property is reduced as much as possible, so that attenuation of light is suppressed. Thus, a light-emitting device capable of modulation of light emission colors which has a high luminance and a long lifetime can be provided. In the light-emitting device, voltages applied to the organic EL elements, which deteriorate individually, are separately controlled, whereby the color tone can be kept constant for a long period.

Abstract: An organic radiation-emitting component, including a first electrode (1) having a first electrical contact region (10) for making electrical contact with the first electrode (1), a first organic functional layer (31) on the first electrode (1), on the first organic functional layer (31) at least one organic active region (4) suitable for emitting electromagnetic radiation during operation, and a second electrode (2) on the active region (4), wherein the first organic functional layer (31) includes a plurality of laterally arranged partial regions (30) each including a first material (51) having a first electrical conductivity and a second material (52) having a second electrical conductivity, the second electrical conductivity is greater than the first electrical conductivity, and the ratio of the proportion of the second material (52) to the proportion of the first material (51) in the partial regions (30) of the first organic functional layer (31) varies in a manner dependent on a lateral distance from the

Abstract: An organic light-emitting diode in accordance with the present invention includes: a reflective electrode; an organic layer formed on the reflective electrode; a transparent electrode formed on the organic layer; a transparent resin layer formed on the transparent electrode; and an encapsulation glass formed on the transparent resin layer. The organic layer includes a light-emitting point. Cone- or pyramid-shaped transparent resin structures are provided in the transparent resin layer in such a manner that each of the cone- or pyramid-shaped transparent resin structures splays from the transparent resin layer toward the encapsulation glass in a normal direction of the encapsulation glass. A refractive index of the transparent resin layer is 1.3 times or more to 1.6 times or less as high as that of the cone- or pyramid-shaped transparent resin structures.

Abstract: A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

Abstract: A light emitting device according to the embodiment includes a first semiconductor layer; an active layer to generate a light on the first semiconductor layer; a second conductive semiconductor layer on the active layer; a transparent electrode layer on the second conductive semiconductor layer; and a multiple thin film mirror on the transparent electrode layer, the multiple thin film mirror being formed by repeatedly stacking a first thin film layer having a first refractive index and a second thin film layer having a second refractive index different from the first refractive index by at least one time, wherein the second conductive semiconductor layer has a thickness satisfying: 2·?1+?2=N·2?±?, (0????/2) in which, ?1 is a phase shift occurring when a light, which travels in a vertical direction, passes through the second conductive semiconductor layer and is expressed as ?1=2?nd/? (n is a refractive index of the light, ? is a wavelength of the light, and d is a thickness of the second conductive semiconduc

Abstract: A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

Abstract: Provided is an organic EL display manufacturing method which has: a step wherein an organic EL panel having a substrate and organic EL elements arranged in matrix on the substrate is prepared, and each organic EL element is permitted to have a pixel electrode disposed on the substrate, an organic layer disposed on the pixel electrode, a transparent counter electrode disposed on the organic layer, a sealing layer disposed on the transparent counter electrode, and a color filter disposed on the sealing layer; a step of detecting a defective portion on the organic layer in the organic EL element; and a step of breaking the transparent counter electrode in a region on the defective portion of the transparent counter electrode by irradiating the region on the defective portion with a laser beam. The laser beam is radiated by being tilted with respect to the normal line on the display surface of the organic EL panel.

Abstract: An electro-optic device (100) includes a conductive wiring board (110) on one surface of which a plurality of conductive wires (140) are arranged so as not to intersect with each other, and a plurality of optical elements (130) each of which is provided on the board (110), and in which an insulating base member (131), a lower electrode (132), a function layer (133), and an upper electrode (134) are sequentially formed on the board (110). In this device (100), the lower electrode (132) is electrically connected to one of the conductive wires (140); the upper electrode (134) is electrically connected to one of the conductive wires (140) which is not connected to the lower electrode (132); and each of the optical elements (130) is provided such that part of the optical element (130) overlaps with part of one or more of the conductive wires (140) in plan view.

Abstract: Provided are an organic light emitting device including: a substrate; a first electrode; a second electrode; and an organic layer interposed between the first electrode and the second electrode and including an emission layer, wherein one of the first electrode and the second electrode is a reflective electrode and the other is a semitransparent or transparent electrode, and wherein the organic layer includes a layer having at least one of the compounds having at least one carbazole group, and a flat panel display device including the organic light emitting device. The organic light emitting device has low driving voltage, excellent current density, high brightness, excellent color purity, high efficiency, and long lifetime.

Abstract: A multifunctional optical film for enhancing light extraction includes a flexible substrate, a structured layer having nanoparticles of different sizes, and a backfill layer. The structured layer effectively uses microreplicated diffractive or scattering nanostructures located near enough to the light generation region to enable extraction of an evanescent wave from an organic light emitting diode (OLED) device. The backfill layer has a material having an index of refraction different from the index of refraction of the structured layer. The backfill layer also provides a planarizing layer over the structured layer in order to conform the light extraction film to a layer of an OLED display device. The film may have additional layers added to or incorporated within it to an emissive surface in order to effect additional functionalities beyond improvement of light extraction efficiency.

Abstract: Disclosed is a reflective anode electrode for an organic EL display, which comprises a novel Al-based alloy reflective film. The reflective anode electrode is capable of assuring low contact resistance and high reflectance even in cases where the Al reflective film is in direct contact with an oxide conductive film such as an ITO or IZO film. In addition, when the Al reflective film is formed into a laminated structure together with the oxide conductive film, the work function of the surface of the upper oxide conductive film is equally high with the work function of a laminated structure that is composed of a general-purpose Ag-based alloy film and an oxide conductive film. Specifically disclosed is a reflective anode electrode for an organic EL display, which is formed on a substrate and characterized by comprising a laminated structure that is composed of an Al-based alloy film containing 0.

Abstract: A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, including a plurality of pits in the substantially planar surface. The active layer overlies the top surface of the first layer and conforms to the top surface, the active layer generating light characterized by a wavelength when holes and electrons recombine therein. The second layer includes a second material of a second conductivity type, the second layer overlying the active layer and conforming to the active layer. The device can be constructed on a substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer that are used to form the pits.

Abstract: An organic EL display panel comprising a substrate and an organic light-emitting element R emitting red light, an organic light-emitting element G emitting green light and an organic light-emitting element B emitting blue light which are arranged on the substrate, wherein each of the organic light-emitting element has a concavely curved pixel electrode which is a reflective electrode, a functional layer formed with coating over the pixel electrode, an organic light emitting layer arranged on the functional layer, a counter electrode which is a transparent electrode arranged over the organic light emitting layer and a bank defining the functional layer formed with coating, the element R, the element G and the element B have different amount of the functional layer and the element R, the element G and the element B have different curvature radius of the concavely curved pixel electrode.

Abstract: A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.

Abstract: A light emitting element with a high contrast is realized. A light emitting device with a high contrast is achieved by using the light emitting element with an excellent contrast. The light emitting element has a layer containing a light emitting substance interposed between a first electrode and a second electrode, and the layer containing the light emitting substance includes a light emitting layer, a layer containing a first organic compound, and a layer containing a second organic compound. The first electrode has a light-transmitting property, and the layer containing the first organic compound and the layer containing the second organic compound are interposed between the second electrode and the light emitting layer. Furthermore, color of the first organic compound and color of the second organic compound are complementary.

Abstract: Light-emitting elements in which an increase of driving voltage can be suppressed are provided. Light-emitting devices whose power consumption is reduced by including such light-emitting elements are also provided. In a light-emitting element having an EL layer between an anode and a cathode, a first layer in which carriers can be produced is formed between the cathode and the EL layer and in contact with the cathode, a second layer which transfers electrons produced in the first layer is formed in contact with the first layer, and a third layer which injects the electrons received from the second layer into the EL layer is formed in contact with the second layer.

Abstract: In an organic light emitting device and method of fabricating the same, a hole is formed in a reflecting layer formed below a first electrode or the reflecting layer itself is patterned to form a reflecting layer pattern, and an opening is formed in the reflecting layer positioned below the first electrode, so that light generated in an organic layer is transmitted toward the bottom as well as the top, and an aperture ratio of the opening may be adjusted to control the amount of the transmitted light and the reflected light. The organic light emitting device includes: a substrate; a first electrode; an organic layer having at least an organic emission layer; and a second electrode formed on the substrate. A reflecting layer is positioned below the first electrode, and has at least one hole or at least one island pattern formed therein.

Abstract: The invention relates to a light-emitting organic component, in particular a light-emitting organic diode, having an electrode and a counter electrode and an organic region arranged between the electrode and the counter electrode, the organic region being formed between the electrode and the counter electrode with a uniform material composition over its planar expansion, the electrode being formed by comb-shaped sub-electrodes electrically shorted among each other for which the comb-shaped electrode sections protruding from a respective comb-shaped electrode connecting section are arranged intermeshing with the organic region at least in an overlap region. Furthermore, the invention relates to an array with a serial connection of several light-emitting organic components and an electrode structure for an electronic component.

Abstract: A multifunctional optical film for enhancing light extraction includes a flexible substrate, a structured layer having nanoparticles of different sizes, and a backfill layer. The structured layer effectively uses microreplicated diffractive or scattering nanostructures located near enough to the light generation region to enable extraction of an evanescent wave from an organic light emitting diode (OLED) device. The backfill layer has a material having an index of refraction different from the index of refraction of the structured layer. The backfill layer also provides a planarizing layer over the structured layer in order to conform the light extraction film to a layer of an OLED display device. The film may have additional layers added to or incorporated within it to an emissive surface in order to effect additional functionalities beyond improvement of light extraction efficiency.

Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity. The inventive gallium nitride-based compound semiconductor light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer stacked on the substrate, wherein on at least one lateral surface of the light emitting device, the bottom (substrate side) of the semiconductor layer is a reverse taper inclined 5 to 85 degrees relative to the substrate main surface and the top of the semiconductor layer is a forward taper inclined 95 to 175 degrees relative to the substrate main surface.

Abstract: A high efficiency lighting device comprising a light emitting diode structure, an eutectic layer and a distributed-Bragg reflecting layer (DBR) therebetween is disclosed. The distributed-Bragg reflecting layer is attached to said light emitting diode structure by vapor deposition and comprises a plurality of high refraction layers, a plurality of low refraction layers and a micro-contact layer array. The high refraction layers and said low refraction layers are arranged in an alternating manner, so as to form a stacked thin film having an alternate high/low refraction pattern. The micro-contact layers are in said stacked thin film and extend vertically through the stacked thin film, therefore connecting said light emitting diode structure and said eutectic layer.

Abstract: Disclosed herein is an organic light emitting diode lighting apparatus and a method for manufacturing the same. The organic light emitting diode lighting apparatus may include a transparent substrate main body having a plurality of groove lines formed thereon, an auxiliary electrode formed in at least one of the plurality of groove lines, a first electrode formed on the substrate main body so as to contact the auxiliary electrode, an organic emission layer formed on the first electrode and a second electrode formed on the organic emission layer.

Abstract: A VCSEL includes a substrate having a partially removed portion; a metal-assisted DBR having a metal layer and a first mirror stack, wherein the metal layer is located at the partially removed portion of the substrate; an active region having a plurality of quantum wells over the metal-assisted DBR; and a second mirror stack over the active region, wherein a number of alternating layers of the first mirror stack is substantially smaller than a number typically required for a VCSEL without the integrated metal reflector. Such a metal-assisted DBR is especially useful for a long-wavelength VCSEL on a InP substrate or a red-color VCSEL on a GaAs substrate.

Abstract: Diode comprising a substrate and an organic electroluminescent layer interposed between a lower electrode and an upper electrode, at least one of which electrodes is formed from a multilayer which is itself formed by the stack of adjacent sublayers made of amorphous carbon, having different refractive indices n1, n2. The amorphous carbon contains no added silicon, thereby making it possible to avoid using silane for the manufacture. The multilayer provides an electrode function, a multimirror function and an encapsulation function.

Abstract: A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more first patterned layers deposited on top of the buffer layer, wherein each of the first patterned layers is comprised of a bottom lateral epitaxial overgrowth (LEO) mask layer and a LEO nitride layer filling holes in the bottom LEO mask layer, one or more active layers formed on the first patterned layers, and one or more second patterned layers deposited on top of the active layer, wherein each of the second patterned layers is comprised of a top LEO mask layer and a LEO nitride layer filling holes in the top LEO mask layer, wherein the top and/or bottom LEO mask layers act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element or beam directing element for the active layers.

Abstract: A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is achieved by sequential exposure of a substrate to predetermined combinations of the elemental sources to produce a pair of DBR layers of compound alloys and a graded region including one or more discrete additional layers between the DBR layers of intermediate alloy composition. Exposure durations and combinations of the elemental sources in each exposure are predetermined by DBR design characteristics.