Abstract: The present invention relates to a light emitting device, particularly to an organic electroluminescent device, that can prevent corrosion of data lines and scan lines and improve the adhesive strength of a sealant. The organic electroluminescent device includes a substrate, a plurality of anode electrode layers disposed in a first direction on the substrate, a plurality of cathode electrode layers disposed in a second direction different from the first direction on the substrate, luminescent areas formed by the anode electrode layers and the cathode electrode layers, a plurality of data lines electrically communicated with the anode electrode layers, and a plurality of scan lines electrically communicated with the cathode electrode layers. At least one of the data lines and the scan lines includes a transparent electrode layer, and the sub-electrode layer completely encloses the transparent electrode layer.

Abstract: A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films.

Abstract: A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).

Abstract: A method for manufacturing a surface-emitting semiconductor laser having a structure in which the single horizontal mode of high power is stably maintained is provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.

Abstract: Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.

Abstract: An optoelectronic chip having a semiconductor body (14), which contains a radiation-emitting region (2), and a partial region (3) in which the surface (13) of the semiconductor body (14) is curved convexly toward a carrier (10). The lateral extent (2r) of the radiation-emitting region (2) is less than the lateral extent (2R) of the partial region (3). A method for producing such a chip is also described.

Abstract: A light emitting diode (LED) is provided. The LED at least includes a substrate, a saw-toothed multilayer, a first type semiconductor layer, an active emitting layer and a second type semiconductor layer. In the LED, the saw-tooth multilayer is formed opposite the active emitting layer below the first type semiconductor layer by an auto-cloning photonic crystal process. Due to the presence of the saw-tooth multilayer on the substrate of the LED, the scattered light form a back of the active emitting layer can be reused by reflecting and recycling through the saw-tooth multilayer. Thus, all light is focused to radiate forward so as to improve the light extraction efficiency of the LED. Moreover, the saw-tooth multilayer does not peel off or be cracked after any high temperature process because the saw-tooth multilayer has the performance of releasing thermal stress and reducing elastic deformation between it and the substrate.

Abstract: A light emitting device is disclosed which includes a substrate, a plurality of anode electrode layers disposed in a first direction on the substrate, a plurality of cathode electrode layers disposed in a second direction different from the first direction on the substrate, a plurality of data lines electrically communicated with the anode electrode layers, and a plurality of scan lines electrically communicated with the cathode electrode layers.

Abstract: A nanoelectromechanical (NEM) device and a method of making same employ a laterally extending nanowire. The nanowire is grown in place from a vertical side of a vertically extending support block that is provided on a horizontal surface of a substrate. The nanowire is spaced from the horizontal surface. The NEM device includes a component that is provided to influence the nanowire.

Abstract: The present invention relates to an organic light emitting device and a manufacturing method. The organic light emitting device includes a first signal line and a second signal line crossing each other, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, an organic layer covering the first signal line, the second signal line, the switching thin film transistor, and the driving thin film transistor, a pixel electrode disposed on the organic layer and connected to the driving thin film transistor, a pixel-defining layer disposed on the organic layer and enclosing the pixel electrode, a blocking film including an inorganic insulating layer and covering the pixel-defining layer and edges of the pixel electrode, a light emitting member disposed on the pixel electrode and a common electrode disposed on the light emitting member.

Abstract: The invention concerns a transparent light-emitting component, in particular an organic light-emitting diode (OLED), with a layer arrangement in which a light-emitting organic layer is arranged between an upper and a lower electrode, the layer arrangement being transparent in a switched-off state and emitting light which is produced in the light-emitting organic layer by applying an electric voltage to the upper and the lower electrode in a switched-on state, which light is radiated in a ratio of at least approximately 4:1 through the upper or the lower electrode and where a stack, which is transparent in the visible spectral region, of dielectric layers is arranged on the side of the upper or the lower electrode.

Abstract: A flexible organic light emitting device and a method of fabricating the same. The device comprises a flexible substrate comprising a plastic material; an organic emissive layer formed on the substrate; and a barrier layer for inhibiting oxygen and moisture permeation into the emissive layer.

Abstract: Provided is an organic electroluminescent element, comprising a transparent substrate and at least one organic layer containing a light-emitting layer between a pair of electrodes, wherein the transparent substrate is formed on the light output face side of the organic layer, a prism structure containing metal oxide is formed between the transparent substrate and an electrode formed on the light output face of the organic layer, and the prism vertexes therein are present facing the transparent substrate. Also provided are a method of manufacturing a prism structure containing metal oxide on a transparent substrate, and a method of manufacturing an organic electroluminescent element by using the substrate having a prism structure.

Abstract: A producing method of a wired circuit board includes the step of preparing a wired circuit board including an insulating layer and a conductive pattern having a wire covered with the insulating layer and a terminal portion exposed from the insulating layer; and the step of forming a semiconductive layer on a surface of the insulating layer by dipping the wired circuit board in a polymeric liquid of a conductive polymer in which an electrode is provided, and applying a voltage so that the electrode becomes an anode and the conductive pattern becomes a cathode.

Abstract: Distributed Bragg reflector (DBR) with reduced DX centers. A DBR includes an AlAs region. The AlAs region includes essentially homogeneous AlAs. The DBR further includes a A1GaAs region. The AlGaAs region includes alternating thin layers of AlAs and GaAs. The alternating thin layers of AlAs and GaAs are arranged such the the AlGaAs region appears as a layer of A1GaAs with appropriate concentrations of Al and Ga.

Abstract: A semiconductor optical device (e.g. a resonant cavity device in this form of an LED or a laser) comprises a single substrate arranged for emitting light (O) for incidence on a sample or other element and also responsive to light (D), e.g. of a different wavelenght, received back from this sample or other element: the device further comprises means for monitoring a characteristic (e.g. its current-voltage characteristic) which varies in dependence upon the light (D) received back from the sample or other element.

Abstract: An organic light emitting diode (OLED) display panel is provided. The OLED display panel includes a substrate, a conductive layer, an active matrix pixel array and several thin film transistors (TFTs). The conductive layer having several openings is disposed above the substrate. The active matrix pixel array having several pixels is disposed above the conductive layer. Each pixel has a display region and a non-display region. The display regions correspond to the openings. The TFTs are correspondingly disposed inside the pixels and correspondingly positioned inside the non-display regions. Each TFT includes a channel layer, a source, a drain and a gate. The channel layer is disposed above the conductive layer. The source and the drain are disposed above channel layer and respectively contact with the two opposite sides of the channel layer. The gate is disposed above the channel layer and positioned between the source and the drain.

Abstract: A top emission type organic light emitting display includes an organic light emitting diode in which an anode, a light emitting layer and a transparent cathode are successively deposited. The cathode has a sandwiched structure in which a transparent oxide layer is inserted between the metal layers. Exemplary embodiments of the cathode of the present invention have better electric conductivity than a conventional cathode of an organic light emitting diode device, and thus has lower power consumption than a conventional top emission organic light emitting display with similar light transmission.

Abstract: In an organic electro-luminescent display, a pixel circuit is disposed in a unit pixel region defined on a substrate. A passivation layer covers the entire unit pixel region including the pixel circuit. An organic light emitting diode (“OLED”) including a transparent lower electrode formed on a portion of the passivation layer which does not overlap the pixel circuit, an OLED layer, and an upper electrode are sequentially formed on the passivation layer. The transparent lower electrode is a transparent anode of the OLED. A protective layer is formed of the same material as the transparent lower electrode and disposed on a portion of the passivation layer corresponding to the pixel circuit to cover and protect the pixel circuit.

Abstract: A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.

Abstract: An organic electroluminescence device including on a substrate, in the following order, a first electrode, at least an organic compound layer including a light-emitting layer, a second electrode, and a protective layer, wherein the protective layer includes two or more layers, a first protective layer closer to the second electrode is an electrically insulating layer containing an organic compound, and a second protective layer farther from the second electrode is a layer containing a metal halide. An organic electroluminescence device improved in storage stability and, in particular, strong in durability with respect to moisture and oxygen, and a producing method thereof is provided.

Abstract: A display unit and method of fabricating same are provided. The display unit includes a plurality of organic electroluminescent devices, each including an organic layer portion including at least a hole-transport layer and a luminescent layer which are stacked each other, and two electrodes sandwiching the organic layer portion. The luminescent layers of the individual organic electroluminescent devices have different thicknesses. The luminescent layer in each organic electroluminescent device contains an organic material having substantially the same HOMO level as that of a hole-transporting material constituting the hole-transport layer, the content of the organic material being set according to the thickness of the luminescent layer.

Abstract: A top-emission-type organic EL device comprising a substrate and at least a light-reflective anode, a bole-injection layer comprising first and second hole-injection layers, a hole-transport layer, a light-emitting layer, an electron-transport layer, and a light-transmitting cathode, which are sequentially laminated on the substrate, wherein the light-reflective anode side of hole-injection layer (the first hole-injection layer) is doped with a metallic oxide.

Abstract: The color-tunable light emitter has a first electrode and a light-generating layer adjacent the first electrode. The light-generating layer is operable to generate light in a band of wavelengths. The color-tunable light emitter also includes an electro-optical layer, a second electrode adjacent the electro-optical layer and a corrugated metal layer between the light-generating layer and the electro-optical layer. The corrugated metal layer couples a sub-band of the light from the light-generating layer to the electro-optical layer. The sub-band has a center wavelength dependent on a voltage applied to at least one of the electrodes.

Abstract: An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during diode operation, and the array configured for passing coolant fluid for transfer of heat to the fluid. LED packages adjustable relative to a mounting grid, are also provided.

Abstract: An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during diode operation, and the array configured for passing coolant fluid for transfer of heat to the fluid. LED packages adjustable relative to a mounting grid, are also provided.

Abstract: An electroluminescent device comprising: a luminous layer provided between a first electrode and a second electrode; and a reflective layer provided on the first electrode side for reflecting light emitted from the luminous layer and emitting the light from said second electrode side; wherein an optical distance L1 between a light-emitting position of the luminous layer and the reflective layer is determined so as to allow the light with wavelength ?, which is center wavelength of the emitted light to be taken out, to increase in intensity as a result of interference, and wherein an optical distance L2 between a reflective interface at the device end portion on the second electrode side and the reflective layer is determined so as to allow the light with wavelength ? to decrease in intensity as a result of interference.

Abstract: A flexible organic light emitting device and a method of fabricating the same. The device comprises a flexible substrate comprising a plastic material; an organic emissive layer formed on the substrate; and a barrier layer for inhibiting oxygen and moisture permeation into the emissive layer.

Abstract: In an organic EL device having a first electrode of a light reflective material, organic layer including an organic light emitting layer, semitransparent reflection layer, and second electrode of a transparent material that are stacked sequentially, and so configured that the organic layer functions as a cavity portion of a cavity structure, light that resonates in a certain spectral width (wavelength ?) is extracted by so configuring that optical path length L becomes minimum in a range satisfying (2L)/?+?((2?)=m (m is an integer) where the phase shift produced in light generated in the organic light emitting layer when reflected by opposite ends of the cavity portion is ? radians, L is optical path length of the cavity portion, and ? is the peak wavelength of the spectrum of part of light to be extracted.