For Organic Solid-state Device Adapted For Rectifying, Amplifying, Oscillating, Or Switching, Or Capacitors Or Resistors With Potential Or Surface Barrier (epo) Patents (Class 257/E51.025)
  • Patent number: 9000423
    Abstract: Methods and compositions to improve the performance of single-component polymer FETs is provided comprising processing a conjugated polymer in the presence of a processing additive. Also provided is a FET device fabricated with a processing additive. Such devices have increased saturation hole and/or electron mobility compared to a control FETs.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: April 7, 2015
    Assignee: The Regents of the University of California
    Inventors: Guillermo C. Bazan, Thuc-Quyen Nguyen, Lei Ying, Peter Zalar, Yuan Zhang
  • Patent number: 8993713
    Abstract: A n-type ladder copolymer including, a n-type ladder copolymer formed with alternating perylene and pyridine units having chemical structure A having two end groups, where perylene units having at least one solubilizing group attaching at position(s) 1, 6, 7, and/or 12, where R1, R2, R3, and R4 solubilizing group(s) are each independently selected from the group consisting of aryl, alkyl aryl, alkoxy aryl, and aryloxy aryl, and where n repeat units ranging from about 4 to about 400
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: March 31, 2015
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: William W. Lai, Alfred Baca
  • Patent number: 8987722
    Abstract: A carbon-based semiconductor structure includes a substrate and a gate stack. The gate stack includes a carbon-based gate electrode formed on the substrate. The gate stack also includes a gate dielectric formed on the carbon-based gate electrode. The gate stack further includes a carbon-based channel formed on the gate dielectric.
    Type: Grant
    Filed: September 19, 2013
    Date of Patent: March 24, 2015
    Assignee: International Business Machines Corporation
    Inventor: Damon Farmer
  • Patent number: 8975620
    Abstract: An organic semiconductor device includes a carrier, a source, a drain, an organic semiconductor single-crystalline channel layer, an organic insulation layer and a gate. The source and the drain are disposed on an upper surface of the carrier. The source and the drain are disposed in parallel and a portion of the carrier is exposed between the source and the drain. The organic semiconductor single-crystalline channel layer is disposed on the upper surface of the carrier and covers a portion of the source, a portion of the drain and the portion of the carrier exposed by the source and the drain. The organic insulation layer covers the carrier, the source, the drain and the organic semiconductor single-crystalline channel layer. The gate is disposed on the organic insulation layer and corresponds to a position of the portion of the carrier exposed by the source and the drain.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: March 10, 2015
    Assignee: E Ink Holdings Inc.
    Inventors: Wei-Chou Lan, Hsing-Yi Wu, Ted-Hong Shinn
  • Patent number: 8945426
    Abstract: The present invention relates to electrically conductive polymer compositions, and their use in electronic devices. The compositions contain a semi-aqueous dispersion of at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer, non-conductive oxide nanoparticles, at least one high-boiling organic liquid, and at least one lower-boiling organic liquid.
    Type: Grant
    Filed: March 12, 2010
    Date of Patent: February 3, 2015
    Assignees: E I du Pont de Nemours and Company, Dupont Displays Inc
    Inventors: Tami Janene Faircloth, Che-Hsiung Hsu, Daniel David Lecloux, Hjalti Skulason, Gordana Srdanov, Charles D. Lang, Michel Dubeau, Nancy L. Gin, Veevin Tsao Kuo Hsu
  • Patent number: 8901620
    Abstract: The present invention relates to a horizontal biosensor, comprising a reduced graphene oxide layer formed on a substrate; a molecular linker formed on the reduced graphene oxide layer; and a metal nanoparticle layer formed on the molecular linker.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: December 2, 2014
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Hyoyoung Lee, Peng Cui
  • Patent number: 8877547
    Abstract: Provided is a thin film transistor including a gate electrode on a substrate; a gate insulating layer on the gate electrode; source and drain electrodes including first source and drain layers on the gate insulating layer, respectively, and spaced apart from each other, wherein at lease one of the first source and drain layers includes indium-tin-oxide doped with at least one Group III element; and an organic semiconductor layer on the gate insulating layer and contacting the first source and drain layers.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: November 4, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Hyun-Sik Seo, Nack-Bong Choi
  • Patent number: 8823105
    Abstract: There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an active layer disposed over the second electrode from above the first electrode and formed of an organic semiconductor material. A charge injection layer is formed between the first electrode and the active layer and between the second electrode and the active layer, and the charge injection layer is formed of an organic material having an increased electric conductivity when the charge injection layer is oxidized.
    Type: Grant
    Filed: June 5, 2012
    Date of Patent: September 2, 2014
    Assignee: Sony Corporation
    Inventor: Mao Katsuhara
  • Patent number: 8802491
    Abstract: There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an active layer disposed over the second electrode from above the first electrode and formed of an organic semiconductor material. A charge injection layer is formed between the first electrode and the active layer and between the second electrode and the active layer, and the charge injection layer is formed of an organic material having an increased electric conductivity when the charge injection layer is oxidized.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: August 12, 2014
    Assignee: Sony Corporation
    Inventor: Mao Katsuhara
  • Patent number: 8778512
    Abstract: The present invention relates new compounds and to an organic electronic device comprising at least one substantially organic layer comprising a non fully conjugated chemical compound, which compound is preferably used in electron transport layers, electron injection layers. The invention also includes a process for preparing an organic electronic device, wherein the substantially organic layer comprising a non fully conjugated chemical compound is deposited on a first layer, and a second layer is deposited on the substantially organic layer, preferably a cathode being deposited on the substantially organic layer comprising the non fully conjugated chemical compound.
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: July 15, 2014
    Assignee: Novaled AG
    Inventors: Sascha Dorok, Ulrich Heggemann, Andrea Lux, Carsten Rothe
  • Patent number: 8772763
    Abstract: The present invention provides a photovoltaic cell having a large short-circuit current density and a large photoelectric conversion efficiency.
    Type: Grant
    Filed: October 29, 2010
    Date of Patent: July 8, 2014
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Ken Yoshimura, Katsuhiro Suenobu
  • Patent number: 8729531
    Abstract: A thin-film transistor includes: an organic semiconductor layer; and a source electrode and a drain electrode spaced apart from each other and disposed to respectively overlap the organic semiconductor layer. The organic semiconductor layer INCLUDES: a lower organic semiconductor layer; and an upper organic semiconductor layer formed on the lower organic semiconductor layer and having solubility and conductivity higher than the lower organic semiconductor layer. The lower organic semiconductor layer extends from an area overlapping the source electrode to an area overlapping the drain electrode, while the upper organic semiconductor layer is disposed in each of the area overlapping the source electrode and the area overlapping the drain electrode so that the respective upper organic semiconductor layers are spaced apart from each other.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: May 20, 2014
    Assignee: Sony Corporation
    Inventor: Iwao Yagi
  • Publication number: 20140124740
    Abstract: A hexacene derivative is described, being expressed by formula (1): wherein X1-X6 denote the presence or absence of a carbonyl bridge [—C(?O)—], with a proviso that at least one of X1-X6 is a carbonyl bridge while any six-member ring absent of a carbonyl bridge is aromatic. A method for forming hexacene is also described, including: thermally treating the hexacene derivative to expel volatile units of CO from the hexacene derivative.
    Type: Application
    Filed: November 5, 2012
    Publication date: May 8, 2014
    Applicant: Academia Sinica
    Inventors: Ta-Hsin Chow, Motonori Watanabe
  • Patent number: 8710494
    Abstract: The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: April 29, 2014
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Romain Gwoziecki, Mohamed Benwadih, Philippe Coronel, Stéphanie Jacob
  • Patent number: 8704215
    Abstract: A novel stilbene derivative is provided with motivation of providing a blue emissive material showing excellent color purity. The use of the stilbene derivative of the present invention allows the fabrication of a blue-emissive light-emitting element with excellent color purity. The invention also includes an electronic device equipped with a display portion in which the stilbene derivative is employed. The stilbene derivative of the present invention is represented by formula (1), in which Ar1 and Ar2 may form a 5-membered ring by being directly bonded to each other. In formula (1), A11 represents any one of substituents represented by general formulas (1-1) to (1-3). The variables shown in formula (1) and (1-1) to (1-3) are as defined in the specification.
    Type: Grant
    Filed: March 10, 2012
    Date of Patent: April 22, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masakazu Egawa, Harue Osaka, Sachiko Kawakami, Nobuharu Ohsawa, Satoshi Seo, Ryoji Nomura
  • Patent number: 8686446
    Abstract: A capacitor device prevents capacitor failure and pixel failure by preventing the capacitor from experiencing a short circuit caused by disconnection of a bridge formed between electrodes of the capacitor and a display apparatus having the capacitor device. A display device comprises a thin film transistor, a light emitting device, and the capacitor device described above.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: April 1, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventor: Sang-Min Hong
  • Patent number: 8652875
    Abstract: A method of manufacturing a thin film transistor is provided. The method includes forming a lower organic semiconductor layer, forming an upper organic semiconductor layer on the lower organic semiconductor layer, the upper organic semiconductor layer having solubility and conductivity higher than those of the lower organic semiconductor layer, forming a source electrode and a drain electrode spaced apart from each other and respectively overlapping the upper organic semiconductor layer, and dissolving the upper organic semiconductor layer selectively by using the source electrode and the drain electrode as a mask.
    Type: Grant
    Filed: September 25, 2012
    Date of Patent: February 18, 2014
    Assignee: Sony Corporation
    Inventor: Iwao Yagi
  • Patent number: 8642379
    Abstract: A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: February 4, 2014
    Assignees: Cambridge Display Technology Limited, Panasonic Corporation
    Inventors: Sadayoshi Hotta, Jeremy Henley Burroughes, Gregory Lewis Whiting
  • Patent number: 8642987
    Abstract: The invention provides a novel memory for which process technology is relatively simple and which can store multivalued information by a small number of elements. A part of a shape of the first electrode in the first storage element is made different from a shape of the first electrode in the second storage element, and thereby voltage values which change electric resistance between the first electrode and the second electrode are varied, so that one memory cell stores multivalued information over one bit. By partially processing the first electrode, storage capacity per unit area can be increased.
    Type: Grant
    Filed: October 14, 2009
    Date of Patent: February 4, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tamae Takano, Kiyoshi Kato, Hideaki Kuwabara
  • Patent number: 8598305
    Abstract: Disclosed are conjugated polymers having desirable properties as semiconducting materials. Such polymers can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: December 3, 2013
    Assignees: Northwestern University, Polyera Corporation
    Inventors: Antonio Facchetti, Tobin J. Marks, Hui Huang, Zhihua Chen
  • Publication number: 20130306934
    Abstract: The present invention relates to a horizontal biosensor, comprising a reduced graphene oxide layer formed on a substrate; a molecular linker formed on the reduced graphene oxide layer; and a metal nanoparticle layer formed on the molecular linker.
    Type: Application
    Filed: August 13, 2012
    Publication date: November 21, 2013
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventor: Hyoyoung LEE
  • Patent number: 8581262
    Abstract: The present invention relates to compositions comprising functionalized or un-functionalized multi cyclic hydrocarbons and functional organic compounds, which can be used in different electronic devices. The invention further relates to an electronic device comprising one or more organic functional layers, wherein at least one of the layers comprises at least one functionalized or un-functionalized multi cyclic hydrocarbon. Another embodiment of the present invention relates to a formulation comprising functionalized or un-functionalized multi cyclic hydrocarbons, from which a thin layer comprising at least one functionalized or un-functionalized multi cyclic hydrocarbon can be formed.
    Type: Grant
    Filed: July 7, 2010
    Date of Patent: November 12, 2013
    Assignee: Merck Patent GmbH
    Inventors: Junyou Pan, Thomas Eberle, Herwig Buchholz
  • Publication number: 20130292647
    Abstract: A method of forming a hydrophobic surface on a semiconductor device structure. The method comprises forming at least one structure having at least one exposed surface comprising titanium atoms. The at least one exposed surface of at least one structure is contacted with at least one of an organo-phosphonic acid and an organo-phosphoric acid to form a material having a hydrophobic surface on the at least one exposed surface of the least one structure. A method of forming a semiconductor device structure and a semiconductor device structure are also described.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 7, 2013
    Applicant: Micron Technology, Inc.
    Inventors: Ian C. Laboriante, Prashant Raghu
  • Publication number: 20130264545
    Abstract: The present invention relates to the use of dithiocarbamate compounds and to an assembly for use in an electronic device, said assembly comprising a self-assembled monolayer of at least one dithiocarbamate compound. The present invention also relates to an electronic device including such assembly.
    Type: Application
    Filed: July 21, 2010
    Publication date: October 10, 2013
    Applicant: SONY CORPORATION
    Inventors: Florian VON WROCHEM, Jurina WESSELS, Dequing GAO, William FORD, Sylvia ROSSELLI, Rene WIRTZ
  • Patent number: 8552419
    Abstract: Cross-conjugated donor-acceptor polymers, methods for their preparation, devices that include polymers, and methods for the preparation and use of the devices.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: October 8, 2013
    Assignee: University of Washington
    Inventors: Kwan-Yue Jen, Fei Huang, Hin-Lap Yip
  • Publication number: 20130234116
    Abstract: An organic electronic device includes an active region polarity definition layer, and a bulk heterojunction active layer formed on the active region polarity definition layer. The bulk heterojunction active layer includes an upper region and a lower region having respective majority carriers localized therein of different polarities.
    Type: Application
    Filed: March 6, 2012
    Publication date: September 12, 2013
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Yoon Lee, Shinuk Cho, Ji Youl Lee, Alan J. Heeger
  • Patent number: 8530889
    Abstract: A carbon nanotube composite in which a conjugated polymer containing repeating units containing a fused heteroaryl unit having a nitrogen-containing double bond in the ring, and a thiophene unit is attached to at least a part of the surface of a carbon nanotube. The present invention reduces the hysteresis of a field-effect transistor having a semiconductor layer containing a carbon nanotube.
    Type: Grant
    Filed: May 11, 2009
    Date of Patent: September 10, 2013
    Assignee: Toray Industries, Inc.
    Inventors: Yukari Jo, Seiichiro Murase, Daisuke Kitazawa, Jun Tsukamoto
  • Patent number: 8525156
    Abstract: An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon applying a voltage to the gate electrode, wherein a channel control layer including an amorphous organic compound having an ionization potential of less than 5.8 eV is provided between the organic semiconductor layer and the insulator layer, has excellent stability of a field-effect mobility and a high response speed even when stored at a high temperature.
    Type: Grant
    Filed: September 9, 2008
    Date of Patent: September 3, 2013
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Hiroaki Nakamura, Yuki Nakano, Masatoshi Saito, Hirofumi Kondo
  • Publication number: 20130200336
    Abstract: A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol.
    Type: Application
    Filed: February 3, 2012
    Publication date: August 8, 2013
    Applicant: BASF SE
    Inventors: Subramanian VAIDYANATHAN, Marcel Kastler, Bertha Tan, Mi Zhou
  • Publication number: 20130182520
    Abstract: A non-volatile memory device including at least a first electrode and a second electrode provided on a substrate, the first and second electrodes being separated from each other; an organic semiconductive polymer electrically connecting the first and second electrodes; an electrolyte in contact with the organic semiconductive polymer; and a third electrode that is not in contact with the first electrode, the second electrode, and the organic semiconductive polymer; wherein the organic semiconductive polymer has a first redox state in which it exhibits a first conductivity, and a second redox state in which it exhibits a second conductivity.
    Type: Application
    Filed: January 18, 2012
    Publication date: July 18, 2013
    Applicants: NATIONAL RESEARCH COUNCIL OF CANADA, XEROX CORPORATION
    Inventors: Richard L. MCCREERY, Lian C.T. SHOUTE, Yiliang WU
  • Publication number: 20130181192
    Abstract: An organic floating gate memory device having protein and a method of fabricating the same are disclosed.
    Type: Application
    Filed: August 13, 2012
    Publication date: July 18, 2013
    Inventors: Jenn-Chang HWANG, Li Shiuan TSAI, Jon-Yiew GAN
  • Patent number: 8480926
    Abstract: Disclosed is a visible light-transmissive liquid-crystalline compound having good hole and electron-transport characteristics and useful as an organic semiconductor material. The compound is represented by a formula (1): wherein R independently represents hydrogen, or alkyl having from 1 to 24 carbon atoms, and any —CH2— in the alkyl may be replaced by —O—, —S—, —CO— or —SiH2—, any —(CH2)2— may be replaced by —CH?CH— or —C?C—, and any hydrogen may be replaced by halogen; Ar represents naphthylene, anthrylene, phenanthrylene, or phenylene; and every hydrogen in phenylene is replaced by halogen, and any hydrogen in naphthylene, anthrylene and phenanthrylene may be replaced by halogen.
    Type: Grant
    Filed: July 4, 2011
    Date of Patent: July 9, 2013
    Assignee: JNC Corporation
    Inventors: Yasuyuki Sasada, Tetsuharu Miwa
  • Publication number: 20130161589
    Abstract: Provided is an organic semiconductor transistor including plural electrodes, and an organic semiconductor layer containing at least one fluorene compound represented by the following formula (I): wherein R1 represents an alkyl group having from 1 to 8 carbon atoms; R2 and R3 each independently represent an alkyl group having from 1 to 8 carbon atoms, or an alkoxy group having from 1 to 8 carbon atoms; and n represents an integer of from 1 to 3.
    Type: Application
    Filed: May 29, 2012
    Publication date: June 27, 2013
    Applicant: FUJI XEROX CO., LTD.
    Inventors: Hidekazu HIROSE, Koji HORIBA, Katsuhiro SATO
  • Patent number: 8461058
    Abstract: An organic layer deposition apparatus including an electrostatic chuck combined with a substrate so as to fixedly support the substrate. The organic layer deposition apparatus including a receiving surface that has a set curvature for receiving the substrate; a deposition source for discharging a deposition material toward the substrate; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; and a patterning slit sheet disposed to face the deposition source nozzle unit, and having a plurality of patterning slits arranged in a second direction perpendicular to the first direction, wherein a cross section of the patterning slit sheet on a plane formed by lines extending in the second direction and a third direction is bent by a set degree, wherein the third direction is perpendicular to the first and second directions.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: June 11, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Valeriy Prushinskiy, Len Kaplan, Se-Ho Cheong, Won-Sik Hyun, Heung-Yeol Na, Kyong-Tae Park, Byoung-Seong Jeong, Yong-Sup Choi
  • Patent number: 8436340
    Abstract: A cross-point cell nanoarray comprises a mechanical support substrate, first and second orders of uniformly spaced parallel electrodes separated by an electrically active organic film and orthogonally arranged to form an array of cross-point cells, individually addressable by biasing the respective opposite electrodes, by selecting them among those of the respective orders, over a planar area of the substrate. The active organic resin layer includes a block copolymer of a major component resin and of at least one different minor component resin, configured to promote formation of large-scale ordered nanostructures through phase segregation, due to block incompatibility and self-assembly properties of the blocks. Polymeric bocks of the ordered nanostructures configured to sequester conductive nanoparticles and/or conductive nanoparticle clusters originally dispersed in the component organic resins, subtracting them from the surrounding matrix copolymer.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: May 7, 2013
    Assignee: STMicroelectronics S.r.l.
    Inventors: Teresa Napolitano, Claudio De Rosa, Finizia Auriemma, Odda Ruiz De Ballesteros, Giovanni Palomba
  • Publication number: 20130062598
    Abstract: Disclosed are new compounds having semiconducting properties. Such compounds can be processed in solution-phase at a temperature of less than about 50° C. into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics.
    Type: Application
    Filed: September 10, 2012
    Publication date: March 14, 2013
    Inventors: Hakan Usta, Damien Boudinet, Jordan Quinn, Antonio Facchetti
  • Publication number: 20130048958
    Abstract: A quinacridone derivative may be represented by Chemical Formula 1, and a photoactive layer and photoelectric conversion device may include the same.
    Type: Application
    Filed: June 25, 2012
    Publication date: February 28, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seon-Jeong Lim, Kyu Sik Kim, Kwang Hee Lee, Dong-Seok Leem, Kyung Bae Park
  • Patent number: 8368065
    Abstract: There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: February 5, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiharu Hirakata, Tetsuji Ishitani, Shuji Fukai, Ryota Imahayashi
  • Publication number: 20130026455
    Abstract: The present disclosure relates to a hybrid organic-inorganic thin film producing method including an interlayer connection between an inorganic cross-linked layer and an organic polymer through a molecular layer deposition (MLD) method, a hybrid organic-inorganic thin film produced by the producing method, and an organic electronic device and a thin film transistor containing the hybrid organic-inorganic thin film.
    Type: Application
    Filed: February 21, 2012
    Publication date: January 31, 2013
    Applicant: Industry-University Cooperation Foundation Hanyang University
    Inventors: Myung Mo SUNG, Kyu Seok HAN, Sang Ho CHO, Ki Bok HAN
  • Publication number: 20130029455
    Abstract: The invention relates to a method for manufacturing adjacent first and second areas of a surface, said areas consisting, respectively, of first and second materials that are different from each other. Said method involves: depositing a first liquid volume that encompasses the first area and comprises a solvent in which the first material is dispersed; depositing a second liquid volume that encompasses the second area and comprises a solvent in which the second material is dispersed; and removing the solvents. According to the invention, the solvents of the first and second volumes are immiscible, and the second volume is simultaneously or consecutively deposited with the deposition of the first volume, before the first volume reaches the second area.
    Type: Application
    Filed: March 7, 2011
    Publication date: January 31, 2013
    Inventors: Mohamed Benwadih, Christophe Serbutoviez, Jean-Marie Verilhac
  • Publication number: 20130015433
    Abstract: A method of forming a carbon nanotube-pentacene composite layer, includes depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes, heating the dispersion to remove solvent from the dispersion, and heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 17, 2013
    Applicant: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Cherie R. Kagan, Rudolf M. Tromp
  • Publication number: 20130009135
    Abstract: There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an active layer disposed over the second electrode from above the first electrode and formed of an organic semiconductor material. A charge injection layer is formed between the first electrode and the active layer and between the second electrode and the active layer, and the charge injection layer is formed of an organic material having an increased electric conductivity when the charge injection layer is oxidized.
    Type: Application
    Filed: June 5, 2012
    Publication date: January 10, 2013
    Applicant: Sony Corporation
    Inventor: Mao KATSUHARA
  • Publication number: 20130001554
    Abstract: An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 3, 2013
    Applicants: The Board of Trustees of the Leland Stanford Junior University, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong Won Chung, Christopher J. Bettinger, Zhenan Bao, Do Hwan Kim, Bang Lin Lee, Jeong il Park, Yong Wan Jin, Sang Yoon Lee
  • Publication number: 20130001525
    Abstract: A thin film transistor controlled by a pressure includes a source electrode, a drain electrode, a semiconductor layer, a gate electrode, and an insulative layer. The drain electrode is spaced from the source electrode. The semiconductor layer includes a polymer composite layer and is electrically connected with the source electrode and the drain electrode. The polymer composite includes a polymer substrate and a plurality of carbon nanotubes dispersed in the polymer substrate. An elastic modulus of the polymer substrate is ranged from about 0.1 MPa to about 10 MPa. The gate electrode is electrically insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulative layer. A press sensing device using the above-mentioned thin film transistor is also provided.
    Type: Application
    Filed: December 13, 2011
    Publication date: January 3, 2013
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITY
    Inventors: CHUN-HUA HU, CHANG-HONG LIU, SHOU-SHAN FAN
  • Publication number: 20120319096
    Abstract: Various embodiments are provided for semiconductor devices including an electrically percolating source layer and methods of fabricating the same. In one embodiment, a semiconductor device includes a gate layer, a dielectric layer, a memory layer, a source layer, a semiconducting channel layer, and a drain layer. The source layer is electrically percolating and perforated. The semiconducting channel layer is in contact with the source layer and the memory layer. The source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier.
    Type: Application
    Filed: March 4, 2011
    Publication date: December 20, 2012
    Inventors: Andrew Gabriel Rinzler, Bo Liu, Mitchell Austin McCarthy
  • Publication number: 20120319090
    Abstract: A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film transistor. This problem can be solved by a device comprising: a substrate, a first electrode formed on the substrate, a functional thin film formed above the first electrode, and a second electrode disposed above the functional thin film, characterized by further comprising, in a region surrounding the region where the functional thin film is formed, a film containing a compound in which a group containing fluorine and a ?-conjugated system are bound together by a cycloalkene structure or a cycloalkane structure.
    Type: Application
    Filed: November 18, 2010
    Publication date: December 20, 2012
    Applicants: SUMITOMO CHEMICAL COMPANY, LIMITED, PANASONIC CORPORATION
    Inventors: Seiji Shinkai, Shuichi Haraguchi, Tomohiro Shirake, Masashi Ogawa, Shuhei Nakatani, Kei Sakanoue, Osamu Goto, Hidenobu Kakimoto
  • Publication number: 20120319097
    Abstract: The present invention relates to a process for the treatment of electrodes in organic electronic (OE) devices, in particular organic field effect transistors (OFETs), to devices prepared by such a process, and to materials and formulations used in such a process.
    Type: Application
    Filed: January 26, 2011
    Publication date: December 20, 2012
    Applicant: MERCK PATENT GESELLSCHAFT MIT BESCHRANKTER HAFTUNG
    Inventors: Pawel Miskiewicz, Li Wei Tan, Tomas Backlund, Paul Craig Brookes, David Sparrowe, Toby Cull, Giles Lloyd
  • Publication number: 20120313087
    Abstract: The present invention relates, inter alia, to compositions comprising, a compound which is able to emit and/or absorb light and a compound which is able either to absorb or emit light, where both compounds each include at least one fluorine radical. The present invention is furthermore directed to a process for the preparation of the composition, to the use of the composition in electronic devices and to the device itself.
    Type: Application
    Filed: January 27, 2011
    Publication date: December 13, 2012
    Applicant: Merck Patent GmbH
    Inventors: Herwig Buchholz, Junyou Pan, Rémi Manouk Anémian
  • Publication number: 20120313086
    Abstract: A field-effect transistor having a specific top-gate bottom-contact structure, the field-effect transistor containing as organic semiconductor materials a compound represented by the formula (1) and a compound represented by the formula (2): wherein R1 and R2 independently represent an unsubstituted or halogen-substituted C1-C36 aliphatic hydrocarbon group; and wherein Ar1, Ar2 and Ar3 independently represent a substituted or unsubstituted aromatic hydrocarbon group, and n is an integer of 6 or greater.
    Type: Application
    Filed: September 6, 2011
    Publication date: December 13, 2012
    Applicant: Nippon Kayaku Kabushiki Kaisha
    Inventor: Yuichi Sadamitsu
  • Patent number: 8330147
    Abstract: An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
    Type: Grant
    Filed: November 28, 2007
    Date of Patent: December 11, 2012
    Assignee: Idemitsu Kosan, Co., Ltd.
    Inventors: Masatoshi Saito, Yuki Nakano, Hiroaki Nakamura