Abstract: A field-effect transistor having a specific top-gate bottom-contact structure, the field-effect transistor containing as organic semiconductor materials a compound represented by the formula (1) and a compound represented by the formula (2): wherein R1 and R2 independently represent an unsubstituted or halogen-substituted C1-C36 aliphatic hydrocarbon group; and wherein Ar1, Ar2 and Ar3 independently represent a substituted or unsubstituted aromatic hydrocarbon group, and n is an integer of 6 or greater.

Abstract: The present invention relates, inter alia, to compositions comprising, a compound which is able to emit and/or absorb light and a compound which is able either to absorb or emit light, where both compounds each include at least one fluorine radical. The present invention is furthermore directed to a process for the preparation of the composition, to the use of the composition in electronic devices and to the device itself.

Abstract: An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

Abstract: The present invention relates to styrene-based copolymers having recurring units which contain substituted anthracenes in the side chain, to blends comprising these polymers according to the invention, and to the use of these polymers and blends in electronic devices. The invention furthermore relates to electronic devices which contain these polymers or blends.

Abstract: The present invention relates to electronic devices, in particular organic electroluminescent devices, comprising metal complexes of the formula (1), and to the preferred metal complexes.

Abstract: A material for an organic photoelectric device, the material including a compound including a pyridine ( ) moiety, the compound being a bipolar organic compound including both a hole transporting unit and an electron transporting unit, the compound being represented by the following Formula 1:

Abstract: A compound for an organic thin film transistor represented by the following formula (1):

Abstract: A compound represented by the following formula (I), provided that the compound in which all of R1 to R14 are hydrogen atoms is excluded.

Abstract: Cross-linkable copper complexes comprising a copper phthalocyanine core and one or more cross-linkable functionalities linked to the phthalocyanine core. The copper complex may have a spacer group with the one or more cross-linkable functionalities on the spacer group. The spacer group contains a chain or one or more aryl groups. These cross-linkable copper complexes may be used in making organic electronic devices, such as OLEDs, by solution processing techniques.

Abstract: A semiconductor material and an organic rectifier diode can be used for organic-based RFID (Radio Frequency Identification) tags. The semiconducting material for an organic diode has a metal complex as a p-dopant for doping a hole-conducting organic matrix material, wherein the metal complex is a metal complex with Lewis acid properties, which acts as an electron pair acceptor.

Abstract: A process for the formation of a capping layer on a conducting interconnect for a semiconductor device is provided, the process comprising the steps of: (a) providing one or more conductors in a dielectric layer, and (b) depositing a capping layer on an upper surface of at least some of the one or more conductors, characterized in that the process further includes: (c) the step of, prior to depositing the capping layer, reacting the dielectric layer with an organic compound in a liquid phase, the said organic compound having the following general formula: (I) where X is a functional group, R is an organic group or a organosiloxane group, Y1 is either a functional group or an organic group or organosiloxane group, and Y2 is either a functional group or an organic group or organosiloxane group, and where the functional group(s) is/are independently selected from the following: NH2, a secondary amine, a tertiary amine, acetamide, trifluoroacetamide, imidazole, urea, OH, an alkyoxy, acryloxy, acetate, SH, an alky

Abstract: Biodegradable electronic devices may include a biodegradable semiconducting material and a biodegradable substrate layer for providing mechanical support to the biodegradable semiconducting material.

Abstract: The present invention relates to a method and a device for providing a current of spin-polarised electrons. More particularly, the present invention is suited for use in spin electronics or detection of spin-polarised electrons.

Abstract: The invention relates to novel quinone compounds and to the use thereof as dopants in organic electronics.

Abstract: Disclosed are an organic compound, an organic electronic device using the same, and a terminal thereof.

Abstract: The present invention relates to a method for fabricating an organic device, said method comprising: (i) Providing a substrate (1) having a surface comprising electrical contact structures (4) and a dielectric portion (3), (ii) Providing a first temporary protection layer (9) on some or all of said electrical contact structures (4), (iii) Providing a first surface modification layer (6) on the dielectric portion (3) and/or providing a third surface modification layer (10) on said electrical contact structures (4) not protected in step (ii), (iv) Removing the first temporary protection layer (9), (v) Providing a second surface modification layer (5) on the electrical contact structures that where protected in step (ii), and (vi) Providing said first surface modification layer (6) on the dielectric portion (3), if it was not provided in step (iii), and (vii) Providing an organic semiconductor layer (7) on top of at least part of said first surface modification layer (6) and on top of said second (5) surface mod

Abstract: To provide a memory element, a memory device, and a semiconductor device, which can be easily manufactured at low cost; are nonvolatile and data-rewritable; and have preferable switching properties and low operating voltage. A memory element of the invention includes a first conductive layer, a second conductive layer facing the first conductive layer, and an organic compound layer provided between the first and the second conductive layers. For the organic compound layer, a high molecular material having an amide group at least at one kind of side chains is used.

Abstract: An organic redox active compound with reversible storage of charge is disclosed. The material characterized by a formula R-M-Y-T. According to some aspects, R represents a deconjugating group, M represents an organic redox active fragment, not comprising any metal ion or metal, capable of reversibly storing at least one charge, T represents a tripod group comprising three groups F, capable of being chemically grafted to a surface of a solid substrate, and Y represents a spacer group separating M from T. A substrate on which the compounds are grafted, a molecular memory device including the compound or the substrate, and an electronic apparatus including the molecular memory device are also disclosed.

Abstract: Provided is an organic electronic device exhibiting excellent conductivity and transparency of an electrode, and low driving voltage, together with en excellent storing property and excellent lifetime. Also disclosed is an organic electronic device possessing a transparent substrate and provided thereon, a first transparent electrode, a second electrode and an organic functional layer provided between the first transparent electrode and the second electrode, wherein the first transparent electrode and the second electrode are opposed to each other, and a transparent conductive layer containing a conductive polymer and an aqueous binder is provided between the first transparent electrode and the organic functional layer.

Abstract: A method of forming an organic layer by using a liquid composition comprising a small molecule organic semiconductor material mixed in a ketone solvent. The liquid composition is deposited on a surface to form the organic layer. The ketone solvent may be an aromatic ketone solvent, such as a tetralone solvent. The organic semiconductor material may be cross-linkable to provide a cross-linked organic layer. The method can be used to make organic electronic devices, such as organic light emitting devices. In another aspect, the liquid composition comprises a small molecule organic semiconductor material mixed in an aromatic ether solvent. Also, provided are liquid compositions which can be used to make organic layers.

Abstract: The present invention provides a photovoltaic cell having a large short-circuit current density and a large photoelectric conversion efficiency.

Abstract: The present invention provides a photovoltaic cell having a large short-circuit current density and a large photoelectric conversion efficiency.

Abstract: The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.

Abstract: Provided are an organic semiconductor material, organic semiconductor thin film and organic thin-film transistor, which contain a perylene tetracarboxylic diimide derivative represented by the following formula (1): In the formula (1), R1 means a linear or branched alkyl group having from 1 to 20 carbon atoms, R2 means a linear or branched alkyl group having from 2 to 6 carbon atoms, R3 means a linear or branched alkyl group having from 2 to 6 carbon atoms, X1 and X2 each mean a heteroatom selected from an oxygen atom, sulfur atom or selenium atom, Y means a halogen atom or cyano group, m stands for a number of from 0 to 4, and n stands for a number of from 0 to 2. Further, the alkyl groups represented by R1 and R2 may each be substituted with one or more fluorine atoms.

Abstract: The present invention relates to a novel anthracene derivative and an organic electronic device using the same. The organic electronic device according to the present invention shows excellent characteristics in efficiency, driving voltage, and life time.

Abstract: The present invention relates to electrically conductive polymer compositions, and their use in electronic devices. The compositions contain a semi-aqueous dispersion of at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer, non-conductive oxide nanoparticles, at least one high-boiling organic liquid, and at least one lower-boiling organic liquid.

Abstract: According to an aspect of the invention, a method is provided for manufacturing electronic components. A conducting element comprising a first portion, a second portion and a third portion between the first portion and the second portion is provided. Thermally responsive dielectric material is added at least onto the third portion of the conducting element. Electric current is supplied between the first portion and the second portion of the conducting element causing ohmic heating to affix dielectric material located on the third portion to the third portion. Non-thermally-affixed dielectric material is removed.

Abstract: An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

Abstract: An organic semiconductor compound including a structural unit represented by Chemical Formula 1.

Abstract: A novel stilbene derivative is provided with motivation of providing a blue emissive material showing excellent color purity. The use of the stilbene derivative of the present invention allows the fabrication of a blue-emissive light-emitting element with excellent color purity. The invention also includes an electronic device equipped with a display portion in which the stilbene derivative is employed. The stilbene derivative of the present invention is represented by formula (1), in which Ar1 and Ar2 may form a 5-membered ring by being directly bonded to each other. In formula (1), A11 represents any one of substituents represented by general formulas (1-1) to (1-3). The variables shown in formula (1) and (1-1) to (1-3) are as defined in the specification.

Abstract: A method of fabricating a circuit includes chemically bonding a coating to a plurality of nanoparticles. The nanoparticles are dispersed in a medium comprising organic molecules. An organic semiconductor channel is formed that comprises the medium. A plurality of electrodes is formed over the substrate. The electrodes are located to function as two of a gate electrode, a drain electrode, and a source electrode of a field-effect transistor.

Abstract: An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.

Abstract: There is presently provided compounds of formula (I), which are useful as p-type semiconductor materials and in devices comprising such p-type semiconductor materials.

Abstract: A material for a hole transport layer has a p-dopant. The dopant forms with the hole transport material a charge transfer complex. A metal component in solution is processed with the hole transport matrix material in solution to form the hole transport layer.

Abstract: A compound of the present invention is represented by the following formula (1): (where: R1 and R2 represent, independently, a substitutable C1 to C20 aliphatic hydrocarbon group; and R3 through R14 represent, independently, one of a hydrogen atom, a halogen atom, a substitutable aliphatic hydrocarbon group, and a substitutable aromatic hydrocarbon group). It is therefore possible to provide a novel compound which can be used as an organic semiconductor material.

Abstract: The present invention relates to heterocyclic radicals or diradicals, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, to the use thereof, to organic semiconductive materials and to electronic and optoelectronic components.

Abstract: A method is provided for preparing an interface surface for the deposition of an organic semiconductor material, in the fabrication of an organic thin film transistor (OTFT). A substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode. Then, source (S) and drain (D) electrodes are formed overlying the gate dielectric, exposing a gate dielectric channel interface region between the S/D electrodes. Subsequent to exposing the OTFT to a H2 or N2 plasma, a self-assembled organic monolayer is formed overlying the S/D electrodes. Finally, an active organic semiconductor layer is formed over the S/D electrodes and gate dielectric channel interface. The OTFT may be exposed to plasma either before or after the formation of the S/D electrodes.

Abstract: A polymer film that contains a mixture of (i) an electrically conductive polymer, and (ii) anisotropic electrically conductive nanostructures, is disclosed, as well as a polymer composition that contains (a) a liquid carrier, (b) an electrically conductive polymer dissolved or dispersed in the liquid carrier, and (c) anisotropic electrically conductive nanostructures dispersed in the liquid carrier, and a method for making polymer film, that includes the steps of: (1) forming a layer of a polymer composition that contains (a) a liquid carrier, (b) one or more electrically conductive polymers dissolved or dispersed in the liquid carrier, and (c) anisotropic electrically conductive nanostructures dispersed in the liquid carrier, and (2) removing the liquid carrier from the layer.

Abstract: A stacked structure including a soluble organic semiconductor material and a water soluble photosensitive material is provided. The water soluble photosensitive material is directly disposed on the surface of the soluble organic semiconductor material.

Abstract: The present invention relates to compositions comprising functionalized or un-functionalized multi cyclic hydrocarbons and functional organic compounds, which can be used in different electronic devices. The invention further relates to an electronic device comprising one or more organic functional layers, wherein at least one of the layers comprises at least one functionalized or un-functionalized multi cyclic hydrocarbon. Another embodiment of the present invention relates to a formulation comprising functionalized or un-functionalized multi cyclic hydrocarbons, from which a thin layer comprising at least one functionalized or un-functionalized multi cyclic hydrocarbon can be formed.

Abstract: The present invention relates generally to the field of macro- and microelectronics with the potential for large-scale integration, optics, communications, and computer technology and particularly to the materials for these and other related fields. The present invention provides an anisotropic semiconductor film on a substrate, comprising at least one solid layer of material that comprises predominantly planar graphene-like carbon-based structures and possesses anisotropy of conductivity, and wherein the layer thickness is in a range from approximately 5 nm to 1000 nm.

Abstract: To provide an organic semiconductive material, expressed by the following general formula I: General Formula I where R1 to R10 are each independently a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkylthio group, or a substituted or unsubstituted aryl group, and may be bonded to each other to form a ring; and X is a carbon atom or a nitrogen atom.

Abstract: The present invention relates new compounds and to an organic electronic device comprising at least one substantially organic layer comprising a non fully conjugated chemical compound, which compound is preferably used in electron transport layers, electron injection layers. The invention also includes a process for preparing an organic electronic device, wherein the substantially organic layer comprising a non fully conjugated chemical compound is deposited on a first layer, and a second layer is deposited on the substantially organic layer, preferably a cathode being deposited on the substantially organic layer comprising the non fully conjugated chemical compound.

Abstract: Semiconductor devices, methods of making semiconductor devices, and coating compositions that can be used to provide a semiconductor layer within a semiconductor device are described. The coating compositions include a small molecule semiconductor, an insulating polymer, and an organic solvent that can dissolve both the small molecule semiconductor material and the insulating polymer. The small molecule semiconductor is an anthracene-based compound (i.e., anthracene derivative) substituted with two thiophene groups as well as with two silylethynyl groups.

Abstract: Cross-conjugated donor-acceptor polymers, methods for their preparation, devices that include polymers, and methods for the preparation and use of the devices.

Abstract: A method for producing electrical contacts on organic semiconductors is described. The method, which involves low energy impact and can be carried out under ambient conditions, comprises covering the relevant surface of the semiconductor with a layer of an appropriate solvent: a metal leaf having an appropriate thickness and work function containing metal oxide impurities is deposited onto the area treated in this manner. Electrical contacts with elevated conductivity are obtained by evaporating the solvent. One embodiment of the invention describes a family of crystalline semiconductors, preferably based on perylene or ?-quaterthiophene, provided with the electrical contacts according to the method described herein and provided with particular structural characteristics. The use of metal leaf satisfying the above-stated requirements (for example imitation gold leaf, gold leaf etc.). in the above-described method is furthermore described.

Abstract: Provided herein is a method for altering an electronic property of a structure comprising an oxide surface or an oxide surface in electronic communication with the structure, the method comprising providing a covalently-bound film comprising at least one organic acid residue on a portion of the oxide surface so that at least one of the following properties of the structure is modified: (a) the charge carrier injection barrier properties; (b) the charge conductivity properties; (c) the charge transport properties; (d) the work function properties; (e) the sub-threshold slope; and (f) the threshold voltage.

Abstract: The present invention relates to a substrate for inkjet printing of an organic semiconductor and, more particularly, to a substrate for inkjet printing of an organic semiconductor in which the surface energy is controlled in order to form a uniform and crystalline organic semiconductor thin film. The substrate for inkjet printing according to the present invention has the surface of a dielectric layer treated to be hydrophilic, causing the organic semiconductor molecules printed on the substrate to self-assemble with high crystallinity.

Abstract: Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device.

Abstract: An object of the invention is to provide a fluorine-containing polymer that is superior in both stability against doping of oxygen and solubility in an organic solvent. The invention provides a fluorine-containing polymer including a structure represented by formula (I) in a repeating unit. wherein R1 and R2 are the same or different and each mean a hydrogen atom, a halogen atom, or a monovalent group.