Abstract: A thermoelectric element comprises a substrate with a patterned discontinuous fullerene thin film. A method of applying a patterned discontinuous fullerene thin film to a substrate comprises applying a mask to the substrate, the mask defining a conductive electric network, applying a fullerene material to the masked substrate to deposit a patterned discontinuous fullerene thin film, applying a selected bond breaking force to the network to disassociate fullerene carbon to fullerene carbon bonds without disassociating fullerene carbon to substrate bonds to form a patterned discontinuous fullerene thin film substantially a single fullerene molecule in thickness.

Abstract: Provided is a photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film, and an electrically conductive film, wherein the photoelectric conversion film contains a compound represented by the following formula (i): wherein each of R2 to R9 independently represents a hydrogen atom or a substituent, provided that each of at least two out of R3, R4, R7 and R8 independently represents an aryl group, a heterocyclic group or —N(Ra)(Rb), each of Ra and Rb independently represents a hydrogen atom or a substituent, and at least either Ra or Rb represents an aryl group or a heterocyclic group; and R1 represents an alkyl group, an aryl group or a heterocyclic group.

Abstract: A method of fabricating a semiconducting device is disclosed. A graphene sheet is formed on a substrate. At least one slot is formed in the graphene sheet, wherein the at least one slot has a width that allows an etchant to pass through the graphene sheet. An etchant is applied to the substrate through the at least one slot formed in the graphene sheet to etch the substrate.

Abstract: A method of fabricating a semiconducting device is disclosed. A graphene sheet is formed on a substrate. At least one slot is formed in the graphene sheet, wherein the at least one slot has a width that allows an etchant to pass through the graphene sheet. An etchant is applied to the substrate through the at least one slot formed in the graphene sheet to etch the substrate.

Abstract: Disclosed is an organic photoelectric conversion element having high photoelectric conversion efficiency and high durability. Also disclosed are a solar cell and an optical sensor array, each using the organic photoelectric conversion element. The organic photoelectric conversion element comprises a bulk heterojunction layer wherein an n-type semiconductor material and a p-type semiconductor material are mixed. The organic photoelectric conversion element is characterized in that the n-type semiconductor material is a polymer compound and the p-type semiconductor material is a low-molecular-weight compound.

Abstract: A photoelectric conversion device having: a pair of electrodes; a photoelectric conversion layer sandwiched between the pair of electrodes; and at least one electron blocking layer provided between one electrode of the pair of electrodes and the photoelectric conversion layer, wherein the photoelectric conversion layer contains at least one organic material, and the at least one electron blocking layer has a mixed layer containing fullerene or fullerene derivatives.

Abstract: Photovoltaic cells comprising an active layer comprising, as p-type material, conjugated polymers such as polythiophene and regioregular polythiophene, and as n-type material at least one fullerene derivative. The fullerene derivative can be C60, C70, or C84. The fullerene also can be functionalized with indene groups. Improved efficiency can be achieved.

Abstract: A photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film and an electrically conductive film in this order, wherein the photoelectric conversion film comprises a photoelectric conversion layer, and an electron blocking layer, wherein the electron blocking layer contains a compound represented by the specific formula.

Abstract: An organic photoelectric conversion device having: a first electrode; a second electrode opposing to the first electrode; and an organic material-containing photoelectric conversion layer provided between the first electrode and the second electrode, wherein an electron spin number of the photoelectric conversion layer is not more than 1.0×1015/cm3.

Abstract: A photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion element provided between the first electrode and the second electrode. The photoelectric conversion element includes a polymer. The polymer includes at least one light absorber which absorbs light and generates at least one kind of carrier. An end part of the polymer combines with a surface, which faces the second electrode, of the first electrode.

Abstract: Provided is a photoelectric conversion device comprising an electrically conductive film, a photoelectric conversion film, and a transparent electrically conductive film, wherein the photoelectric conversion film contains a fullerene or a fullerene derivative and a photoelectric conversion material having an absorption spectrum satisfying at least either the following condition (A) or (B): ?M1<?L1 and ?M2<?L2??(A) ?M1<?L1 and ?|?M1??L1|>?|?M2??L2|??(B) wherein ?L1, ?L2, ?M1 and ?M2 are the wavelength at an absorption intensity of ½ of the maximum absorption intensity in the wavelength range of from 400 to 800 nm, each of ?L1 and ?L2 represents the wavelength in a chloroform solution spectrum when the photoelectric conversion material is dissolved in chloroform, and each of ?M1 and ?M2 represents the wavelength in a thin-film absorption spectrum of the photoelectric conversion material alone, provided that ?L1<?L2 and ?M1<?M2.

Abstract: Disclosed is a compound represented by formula 1: wherein each of A, X, Y, Y? and Y? has the same meaning as described herein. When used in an organic light emitting device, the compound represented by formula 1 has at least one function selected from the group consisting of hole injection, hole transport, light emitting, electron transport, electron injection, etc., depending on the type of each unit forming the trimer or substituents in each unit. An organic light emitting device is also disclosed. The organic light emitting device includes a first electrode, an organic film having one or more layers and a second electrode, laminated successively, wherein at least one layer of the organic film includes at least one compound represented by formula 1.

Abstract: Disclosed are a semiconductor device and a manufacturing method thereof. The semiconductor device can include a recess formed in an active area of a semiconductor substrate, an insulating layer formed in the recess, a source electrode and a drain electrode spaced apart from the source electrode on the insulating layer, a carbon nanotube layer formed between the source and drain electrodes, an oxide layer pattern covering at least the carbon nanotube layer, and a gate electrode formed on the oxide layer pattern.

Abstract: A photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film and an electrically conductive film in this order, wherein the photoelectric conversion film comprises a photoelectric conversion layer, and an electron blocking layer, wherein the electron blocking layer contains a compound represented by the specific formula.

Abstract: A graphene electrode having a surface modified to have a high work function, and an electronic device including the same.

Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

Abstract: A graphene substrate is doped with one or more functional groups to form an electronic device.

Abstract: Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes.

Abstract: The present invention relates to high-purity quantum dot-fullerene dimers with controllable linker length and the process of fabricating the same. More particularly, this invention relates to the design, synthesis, and application of high-purity quantum dot-fullerene dimers by applying a novel stepwise surface assembly procedure that ensures the formation of conjugates due to steric repulsion effects between the quantum dots.

Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

Abstract: A photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion element provided between the first electrode and the second electrode. The photoelectric conversion element includes a polymer. The polymer includes at least one light absorber which absorbs light and generates at least one kind of carrier. An end part of the polymer combines with a surface, which faces the second electrode, of the first electrode.

Abstract: Disclosed herein is an organic thin film device. The organic thin film device includes a UV barrier layer, which has a UV blocking effect, in addition to at least one electrode and at least one organic semiconductor layer on a substrate. The organic thin film device employs a film or a coating liquid which comprises phenolic derivatives or cyanoacrylate derivatives exhibiting a UV-blocking effect in a wavelength of 400 nm or less, so that photodecomposition of an organic material for use in fabrication of the organic thin film device by UV rays and sunlight can be minimized, thereby innovatively increasing lifetime of the device.

Abstract: A multiple die structure includes a first die (110), a second die (120), a carbon nanotube (130) having a first end (131) in physical contact with the first die and having a second end (132) in physical contact with the second die, and an electrically conductive material (240) in physical contact with the first end of the carbon nanotube and in physical contact with the first die. Forming a connection between the first die and the second die can include providing a connection structure (400, 500, 600, 900) in which the electrically conductive material is adjacent to the carbon nanotube, placing the connection structure adjacent to the first die and to the second die, and bonding the first die and the second die to the connection structure.

Abstract: The present invention relates to a method of preparing a carbon nanotube-quantum dot conjugate having a high density of quantum dots (QDs) on its surface. This method involves providing a plurality of semiconductor quantum dots and providing a thiol-functionalized carbon nanotube having a plurality of terminal thiol groups on its surface. The plurality of semiconductor quantum dots are attached to the surface of the carbon nanotube under conditions effective to yield a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention also relates to a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention further relates to a photodetector device. This device includes a substrate and a nanocomposite layer. The nanocomposite layer includes a plurality of the carbon nanotube-quantum dot conjugates previously described.

Abstract: The present invention provides a fullerene derivative represented by the following formula (1).

Abstract: A method of fabricating a nanowire memory device, and a system of controlling nanowire formation used in the same method are provided. In the method of fabricating a nanowire memory device which includes a substrate; an electrode formed on the substrate and insulated from the substrate; and a nanowire having its one end connected with the electrode and formed at a given length, the method comprises: forming an electrode and a dummy electrode to be paired with the electrode on the substrate; forming the nanowire between the electrode and the dummy electrode while measuring a current flowing between the electrode and the dummy electrode, and cutting power applied between the electrode and the dummy electrode when the current measured is a given value; and removing the dummy electrode.

Abstract: A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength ?1 and a second photoactive region having a characteristic absorption wavelength ?2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that ?1 is at least about 10% different from ?2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.

Abstract: Disclosed is an organic photoelectric conversion element having high photoelectric conversion efficiency and high durability. Also disclosed are a solar cell and an optical sensor array, each using the organic photoelectric conversion element The organic photoelectric conversion element comprises a bulk heterojunction layer wherein an n-type semiconductor material and a p-type semiconductor material are mixed. The organic photoelectric conversion element is characterized in that the n-type semiconductor material is a polymer compound and the p-type semiconductor material is a low-molecular-weight compound.

Abstract: A nonvolatile organic bistable memory device includes a substrate, a lower electrode disposed on the substrate, a lower charge injection layer disposed on the lower electrode, an insulating polymer layer including nanoparticles disposed on the lower charge injection layer, an upper charge injection layer disposed on the insulating polymer layer, and an upper electrode disposed on the upper charge injection layer. The lower and upper charge injection layers each include fullerenes and/or carbon nanotubes.

Abstract: Provided is a photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film, and an electrically conductive film, wherein the photoelectric conversion film contains a compound represented by the following formula (i): wherein each of R2 to R9 independently represents a hydrogen atom or a substituent, provided that each of at least two out of R3, R4, R7 and R8 independently represents an aryl group, a heterocyclic group or —N(Ra)(Rb), each of Ra and Rb independently represents a hydrogen atom or a substituent, and at least either Ra or Rb represents an aryl group or a heterocyclic group; and R1 represents an alkyl group, an aryl group or a heterocyclic group.

Abstract: Provided is a photoelectric conversion device comprising an electrically conductive film, a photoelectric conversion film, and a transparent electrically conductive film, wherein the photoelectric conversion film contains a fullerene or a fullerene derivative and a photoelectric conversion material having an absorption spectrum satisfying at least either the following condition (A) or (B): (A): ?M1<?L1 and ?M2<?L2 (B): ?M1<?L1 and ?|?M1??L1|>?|?M2??L2| wherein ?L1, ?L2, ?M1 and ?M2 are the wavelength at an absorption intensity of ½ of the maximum absorption intensity in the wavelength range of from 400 to 800 nm, each of ?L1 and ?L2 represents the wavelength in a chloroform solution spectrum when the photoelectric conversion material is dissolved in chloroform, and each of ?M1 and ?M2 represents the wavelength in a thin-film absorption spectrum of the photoelectric conversion material alone, provided that ?L1<?L2 and ?M1<?M2.

Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

Abstract: An OLED electronic device contains a fullerene chemically bonded to a hole transport layer. The bonding of the fullerene to the hole transport layer improves device lifetime and prevents migration of the fullerene to adjacent layers where deleterious effects may result.

Abstract: A fullerene derivative for electron acceptor is disclosed. Introducing a benzylalkyl group into the fullerene derivative can increase the affinity of the fullerene derivative with electron donors, and introducing an alkyl group into the fullerene derivative can increase the solubility of the fullerene derivative with an organic solvent. In addition, an organic thin-film solar cell and a method of manufacturing the same are further disclosed. An annealing process can be employed to improve the crystallization and to reduce the phase separation state of a photoactive layer that is formed by the fullerene derivative and the electron acceptor. Thereby, the fullerene derivative is facilitated to enhance the solar energy to electricity conversion efficiency of the resultant organic thin-film solar cell.

Abstract: Provided are a flexible and transparent carbon nano tube (CNT) thin film transistor using a degradable polymer substrate, and a display adapting the CNT thin film transistor. The polymer substrate is formed of a polymer material that is naturally degraded, and a CNT channel, where a semiconductive CNT is dispersed on a transparent organic material, is prepared on the polymer substrate. Source and drain electrodes, where a conductive CNT is ejected on a transparent organic material, are connected to both sides of the CNT channel. A gate, where a conductive CNT is dispersed on a transparent organic material, is disposed on or below the CNT channel, and a gate insulation layer including a transparent organic material is disposed between the CNT channel and the gate.

Abstract: Disclosed are compositions of mixed fullerene derivatives with utility in organic semiconductors, and methods of making and using such compositions. In certain embodiments, the present invention relates to compositions of mixed fullerene derivatives further comprising one or more additional fullerene-based components within specified ranges. In certain other embodiments, the invention relates to methods of producing mixed fullerene derivatives of a specific composition from mixed fullerene starting materials, or pure fullerene derivatives of a specific composition from mixed fullerene derivatives. In yet other embodiments, the invention relates to semiconductors and devices comprising a composition of the invention.

Abstract: Upon fixing fine particulate active element members, which are carbon nanotube, rod-shaped semiconductor crystal, or the like, in an electronic device at predetermined positions thereof respectively, a method for producing an electronic device includes: dispersing the fine particulate active element members in a dielectric liquid and filling the liquid in a space between a process-objective substrate and a mask which is placed opposite to the substrate and which has predetermined pattern electrodes formed therein; and applying a predetermined voltage to the predetermined electrodes to concentrate the fine particulate active element members at positions which correspond to positions of the pattern electrodes, respectively. In this state, a light is irradiated to the substrate and the fine particulate active element members in the liquid so as to fix the fine particulate active element members to the substrate by a photochemical reaction.

Abstract: The present invention encompasses an organic field-effect transistor comprising an n-type organic semiconductor formed of a fullerene derivative having a fluorinated alkyl group which is expressed by the following chemical formula (wherein at least any one of R1, R2 and R3 is a perfluoro alkyl group or a partially-fluorinated semifluoro alkyl group each having a carbon number of 1 to 20), and a field-effect transistor production method comprising forming an organic semiconductor layer using the fullerene derivative by a solution process, and subjecting the organic semiconductor layer to a heat treatment in an atmosphere containing nitrogen or argon or in vacuum to provide enhanced characteristics to the organic semiconductor layer. The present invention makes it possible to form an organic semiconductor layer by a solution process and provide an organic field-effect transistor excellent in electron mobility and on-off ratio and capable of operating even in an ambient air atmosphere.

Abstract: An integrated organic photovoltaic and electroluminescent device includes an organic light emitting diode and an organic photovoltaic. The OLED and the OPV share a common substrate building layer.

Abstract: An organic-semiconductor-based infrared receiving device comprises an electrode layer having a positive layer and a negative layer to form an electric field, and a transport layer located between the positive and negative layers and having a first and a second predetermined material combined in a predetermined ratio. The energy of infrared light from a light source is received at an interface between the first and second materials. The thickness of the transport layer can be increased to enhance the light absorbance in the infrared light range to form electron-hole pairs, which are then parted to form a plurality of electrons and holes driven by the electric field to move to the negative layer and the positive layer, respectively, so that a predetermined photocurrent is generated.

Abstract: A multilayer insulating structure including a first stop layer, a first insulating layer and a second stop layer is formed on the first conductive structure. A second conductive structure and a second insulating layer are formed on the first conductive structure. The second insulating layer and the second conductive structure are etched to form a first hole and a second hole having a first radius. A spacer is formed on sidewalls of the first and second holes. The second stop layer and the first insulating layer are etched using the spacer as an etch mask to form a third hole having a second radius smaller than the first radius. A sacrificial filler is formed on the first stop layer to fill the third hole. After removing the spacer, the sacrificial filler is removed. The first stop layer is etched. A carbon nano-tube is grown from the first conductive structure.

Abstract: A method of fabricating a phase change RAM (PRAM) having a fullerene layer is provided. The method of fabricating the PRAM may include forming a bottom electrode, forming an interlayer dielectric film covering the bottom electrode, and forming a bottom electrode contact hole exposing a portion of the bottom electrode in the interlayer dielectric film, forming a bottom electrode contact plug by filling the bottom electrode contact hole with a plug material, forming a fullerene layer on a region including at least an upper surface of the bottom electrode contact plug and sequentially stacking a phase change layer and an upper electrode on the fullerene layer. The method may further include forming a switching device on a substrate and a bottom electrode connected to the switching device, forming an interlayer dielectric film covering the bottom electrode and forming a bottom electrode contact hole exposing a portion of the bottom electrode in the interlayer dielectric film.

Abstract: Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes.

Abstract: A Carbon NanoTube (CNT) structure includes a substrate, a CNT support layer, and a plurality of CNTs. The CNT support layer is stacked on the substrate and has pores therein. One end of each of the CNTs is attached to portions of the substrate exposed through the pores and each of the CNTs has its lateral sides supported by the CNT support layer. A method of vertically aligning CNTs includes: forming a first conductive substrate; stacking a CNT support layer having pores on the first conductive substrate; and attaching one end of the each of the CNTs to portions of the first conductive substrate exposed through the pores.

Abstract: An embodiment of the present invention is a technique to control carbon nanotubes (CNTs). A laser beam is focused to a carbon nanotube (CNT) in a fluid. The CNT is responsive to a trapping frequency. The CNT is manipulated by controlling the focused laser beam.

Abstract: The present invention provides layered hole injection structures including one or more layers of fullerenes for application in an organic electroluminescent device. The layered structures include a bi-layered structure including an electrically conductive layer serving as electrical contact to external circuit and a fullerene layer sandwiched between the conductive layer and a hole transport layer. The layered structure may also includes a tri-layered structure stacked sequentially including a first electrically conductive layer, a fullerene layer and a hole injection layer material selected from thermally stable molecules such as CuPc. The layered structure may also include a four-layered structure stacked sequentially including a first electrically conductive layer, a fullerene layer on the conductive layer, a noble metal layer on the fullerene layer and another fullerene layer on the noble metal layer.

Abstract: An organic light emitting device comprises an anode, a cathode and a complex emitting layer. The complex emitting layer comprises a host and a guest. The host has a first energy level of a valence band and is used for a hole-injection layer or hole-transport layer. The guest has a second energy level of a conduction band and is used for doping the guest. The difference between the first and second energy levels is less than 2.5 eV.

Abstract: The present invention provides a method for the preparation of nanoparticle conjugates comprising: protocols for synthesizing intermediate product molecules by introducing known numbers of two or more substituents into a flexible hydrophilic polymer, where one substituent is capable, optionally after deprotection, of binding to a nanoparticle, and where the other substituents are capable of participating in analytical or other applications; protocols for contacting the intermediate product molecules with nanoparticles for a period of time and under conditions effective to allow the binding of a known number of the intermediate product molecules to each nanoparticle to provide the nanoparticle conjugate.

Abstract: An electroluminescent device has a hole transporting interlayer which incorporates nanostructures, including carbon nanostructures. In some embodiments, other layers such as the emissive layer of the device can also incorporate nanostructures therein.