Abstract: Photoactive compounds are disclosed. The disclosed photoactive compounds include metal complexes with dipyrromethene-based ligands, which can be substituted with a variety of different side chains or groups or can include various fused ring configurations, such as including aromatic or heteroaromatic groups. The metal complexes may include two dipyrromethene-based ligands, which can be the same or different. The photoactive compounds can be used as photoactive materials in organic photovoltaic devices, such as visibly transparent or opaque photovoltaic devices.

Abstract: An apparatus including: a stacked structure including a first substrate having a flat surface; a flat first graphene layer adjacent the flat surface of the first substrate; a flat second graphene layer adjacent the flat first graphene layer; and a second substrate having a flat surface adjacent the flat second graphene layer. An apparatus including: a stacked structure including a substrate having a flat upper surface; a flat lower patterned layer overlying the flat upper surface of the substrate and including at least one patterned electrode; a flat lower graphene layer overlying the flat lower patterned layer; a flat upper graphene layer overlying the flat lower graphene layer; and a flat upper patterned layer overlying the flat upper graphene layer and including at least one patterned electrode.

Abstract: A method for forming a graphite-based device on a substrate having a plurality of zones is provided where the substrate is carbon doped in zones. Each such zone comprises a plurality of dopant profiles. One or more graphene stacks are generated in the doped zones. A graphene stack so generated comprises a non-planar graphene layer characterized by a bending angle, curvature, characteristic dimension, graphene orientation, graphene type, or combinations thereof. A method for forming a graphite-based device on a substrate is provided, the substrate comprising a graphene foundation material and a plurality of zones. The substrate is patterned to form features in the zones. One feature comprises a non-planar surface or at least two adjacent surfaces that are not coplanar. One or more graphene stacks are concurrently generated, at least one of which comprises a non-planar graphene layer overlaying the non-planar surface or the at least two adjacent surfaces.

Abstract: A method for making a carbon nanotube film includes the steps of providing an array of carbon nanotubes, treating the array of carbon nanotubes by plasma, and pulling out a carbon nanotube film from the array of carbon nanotubes treated by the plasma.

Abstract: A method of fabricating a semiconducting device is disclosed. A graphene sheet is formed on a substrate. At least one slot is formed in the graphene sheet, wherein the at least one slot has a width that allows an etchant to pass through the graphene sheet. An etchant is applied to the substrate through the at least one slot formed in the graphene sheet to etch the substrate.

Abstract: A method of fabricating a semiconducting device is disclosed. A graphene sheet is formed on a substrate. At least one slot is formed in the graphene sheet, wherein the at least one slot has a width that allows an etchant to pass through the graphene sheet. An etchant is applied to the substrate through the at least one slot formed in the graphene sheet to etch the substrate.

Abstract: The present invention provides an organic light emitting device comprising a first electrode, at least one organic layer and a second electrode, laminated successively, in which at least one layer of the organic layer has a polycyclic aromatic hydrocarbon as a core and comprises at least one of a derivative in which a substituted or unsubstituted C2-30 cycloalkane, or a substituted or unsubstituted C5-50 polycycloalkane is directly fused to the core or fused to a substituent of the core: and a new organic compound usable in the organic light emitting device. Furthermore, the present invention provides a charge carrier extracting, injecting or transporting material which has a polycyclic aromatic hydrocarbon as a core and comprises a derivative in which a substituted or unsubstituted C2-30 cycloalkane, or a substituted or unsubstituted C5-50 polycycloalkane is directly fused to the core or fused to a substituent of the core.

Abstract: A catalyst film (2) is formed over a substrate (1). A graphene (3) is grown on the catalyst film (2). A gap through which a lower surface of the catalyst film (2) is exposed is formed. The catalyst film (2) is removed through the gap.

Abstract: An electrical device comprising (A) a substrate having a surface and (B) a nanohole superlattice superimposed on a portion of the surface is provided. The nanohole superlattice comprises a plurality of sheets having an array of holes defined therein. The array of holes is characterized by a band gap or band gap range. The plurality of sheets forms a first edge and a second edge. A first lead comprising a first electrically conductive material forms a first junction with the first edge. A second lead comprising a second electrically conductive material forms a second junction with the second edge. The first junction is a Schottky barrier with respect to a carrier. In some instances a metal protective coating covers all or a portion of a surface of the first lead. In some instances, the first lead comprises titanium, the second lead comprises palladium, and the metal protective coating comprises gold.

Abstract: A composition of matter includes at least one carbon nanotube (CNT) or a graphene type structure having an outer surface, and a plurality of crystalline polymer supramolecular structures that include a conjugated polymer that are non-covalently secured to the outer surface of the CNTs or the graphene type structure. The conjugated polymer can be a conjugated homopolymer or a block copolymer including at least one conjugated block. The supramolecular structures extend outward from the outer surface of the CNTs or graphene type structures.

Abstract: Disclosed is a transparent carbon nanotube (CNT) electrode using a conductive dispersant. The transparent CNT electrode comprises a transparent substrate and a CNT thin film formed on a surface the transparent substrate wherein the CNT thin film is formed of a CNT composition comprising CNTs and a doped dispersant. Further disclosed is a method for producing the transparent CNT electrode. The transparent CNT electrode exhibits excellent conductive properties, can be produced in an economical and simple manner by a room temperature wet process, and can be applied to flexible displays. The transparent CNT electrode can be used to fabricate a variety of devices, including image sensors, solar cells, liquid crystal displays, organic electroluminescence (EL) displays and touch screen panels, that are required to have both light transmission properties and conductive properties.

Abstract: The present invention relates to a horizontal biosensor, comprising a reduced graphene oxide layer formed on a substrate; a molecular linker formed on the reduced graphene oxide layer; and a metal nanoparticle layer formed on the molecular linker.

Abstract: Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes. Particularly, a method of doping carbon nanotubes having improved conductivity by reforming the carbon nanotubes using an oxidizer, doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes are provided.

Abstract: A semiconductor structure which includes a substrate; a graphene layer on the substrate; a source electrode and a drain electrode on the graphene layer, the source electrode and drain electrode being spaced apart by a predetermined dimension; a nitride layer on the graphene layer between the source electrode and drain electrode; and a gate electrode on the nitride layer, wherein the nitride layer is a gate dielectric for the gate electrode.

Abstract: An organic semiconductor device includes, between a pair of electrodes of a first metal electrode and a second electrode, at least, a light-emitting layer, a hole injection layer which removes holes from the first metal electrode, a hole transporting layer formed on the light-emitting layer on a side of the first metal electrode for transporting the holes removed by the hole injection layer to the light-emitting layer, and an electron transporting layer formed on the light-emitting layer on a side of the second electrode for removing electrons from the second electrode and transporting the electrons to the light-emitting layer, wherein the organic semiconductor device further includes a crystallinity controlling member which is a series of discontinuous clusters along the contact surface of the hole injection layer that is in contact with the first metal electrode, for controlling an orientation of crystalline molecules.

Abstract: A gated electrical device includes a non-conductive substrate and a graphene structure disposed on the non-conductive substrate. A metal gate is disposed directly on a portion of the graphene structure. The metal gate includes a first metal that has a high contact resistance with graphene. Two electrical contacts are each placed on the graphene structure so that the metal gate is disposed between the two electrical contacts. In a method of making a gated electrical device, a graphene structure is placed onto a non-conductive substrate. A metal gate is deposited directly on a portion of the graphene structure. Two electrical contacts are deposited on the graphene structure so that the metal gate is disposed between the two electrical contacts.

Abstract: Implementations and techniques for producing substrates suitable for growing graphene monolayers are generally disclosed.

Abstract: A semiconductor structure having a high Hall mobility is provided that includes a SiC substrate having a miscut angle of 0.1° or less and a graphene layer located on an upper surface of the SiC substrate. Also, provided are semiconductor devices that include a SiC substrate having a miscut angle of 0.1° or less and at least one graphene-containing semiconductor device located atop the SiC substrate. The at least one graphene-containing semiconductor device includes a graphene layer overlying and in contact with an upper surface of the SiC substrate.

Abstract: In some aspects, a microelectronic structure is provided that includes (1) a first conducting layer; (2) a first dielectric layer formed above the first conducting layer and having a feature that exposes a portion of the first conducting layer; (3) a graphitic carbon film disposed on a sidewall of the feature defined by the first dielectric layer and in contact with the first conducting layer at a bottom of the feature; and (4) a second conducting layer disposed above and in contact with the graphitic carbon film. Numerous other aspects are provided.

Abstract: An organic planarizing layer (OPL) is formed atop a semiconductor substrate which includes a plurality of gate lines thereon. Each gate line includes at least a high k gate dielectric and a metal gate. A patterned photoresist having at least one pattern formed therein is then positioned atop the OPL. The at least one pattern in the photoresist is perpendicular to each of the gate lines. The pattern is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each including at least a high k gate dielectric portion and a metal gate portion. The patterned photoresist and the remaining OPL layer are then removed utilizing a sequence of steps including first contacting with a first acid, second contacting with an aqueous cerium-containing solution, and third contacting with a second acid.

Abstract: A solid state Klystron structure is fabricated by forming a source contact and a drain contact to both ends of a conducting wire and by forming a bias gate and a signal gate on the conducting wire. The conducting wire may be at least one carbon nanotube or at least one semiconductor wire with long ballistic mean free paths. By applying a signal at a frequency that corresponds to an integer multiple of the transit time of the ballistic carriers between adjacent fingers of the signal gate, the carriers are bunched within the conducting wire, thus amplifying the current through the solid state Klystron at a frequency of the signal to the signal gate, thus achieving a power gain.

Abstract: The invention relates to a method for functionalizing a conductive or semiconductor material (M) by covalent grafting of receptor molecules (R) to its surface, said method comprising the following steps: (i) applying, across the terminals of a source electrode and a drain electrode located on either side of the material (M), sufficient potential difference to thermally activate the material (M) with respect to the grafting reaction of the molecules (R); and (ii) placing the material (M) thus activated in contact with a liquid or gaseous medium containing receptor molecules (R), thereby obtaining a material (M) functionalized by covalently grafted receptor molecules (R).

Abstract: An organic planarizing layer (OPL) is formed atop a semiconductor substrate which includes a plurality of gate lines thereon. Each gate line includes at least a high k gate dielectric and a metal gate. A patterned photoresist having at least one pattern formed therein is then positioned atop the OPL. The at least one pattern in the photoresist is perpendicular to each of the gate lines. The pattern is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each including at least a high k gate dielectric portion and a metal gate portion. The patterned photoresist and the remaining OPL layer are then removed utilizing a sequence of steps including first contacting with a first acid, second contacting with an aqueous cerium-containing solution, and third contacting with a second acid.

Abstract: A graphene substrate is doped with one or more functional groups to form an electronic device.

Abstract: The present invention relates to an anode structure for use in a top-emission type organic EL device which comprises a laminated structure comprising an anode layer made of at least one selected from the group consisting of aluminum, aluminum alloys, silver and silver alloys; and a buffer layer directly provided on the anode layer and made of an electrically conductive amorphous carbon having a hydrogen concentration of 15 at. % or less. According to the present invention, there is provided an anode structure which is superior in alkali resistance and can lengthen lifetime of an organic EL device as well as can ensure a high work function suitable for an anode for a high-luminance, high-power-efficient organic EL device.

Abstract: Provided is a field effect transistor including a graphene channel layer, and capable of increasing an on/off ratio of an operating current by using the graphene of the graphene channel layer. The field effect transistor includes: a substrate; the graphene channel layer which is disposed on a portion of the substrate and includes graphene; a first electrode disposed on a first region of the graphene channel layer and a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is apart from the first region, and a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation layer.

Abstract: A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications.

Abstract: A vertical field effect transistor (FET) comprises a gate electrode and a first electrode layer having a dielectric layer interposed between these electrodes and a semiconducting active layer electrically coupled to the first electrode. The active layer and the dielectric layer sandwich at least a portion of the first electrode where at least one portion of the active layer is unshielded by the first electrode such that the unshielded portion is in direct physical contact with the dielectric layer. A second electrode layer is electrically coupled to the active layer where the second electrode is disposed on at least a portion of the unshielded portion of the active layer such that the second electrode can form electrostatic fields with the gate electrode upon biasing in unscreened regions near the first electrode.

Abstract: A simplified method for fabricating a solar cell device is provided. The solar cell device has silicon nanowires (SiNW) grown on an upgraded metallurgical grade (UMG) silicon (Si) substrate. Processes of textured surface process and anti-reflection thin film process can be left out for further saving costs on equipment and manufacture investment. Thus, a low-cost Si-based solar cell device can be easily fabricated for wide application.

Abstract: The present invention relates to an organic semiconductor element that comprises multiple layers. One or more layers may include compounds that can function as light absorbers, charge transporting materials, and/or as a dopant.

Abstract: Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.

Abstract: The present invention relates generally to the field of macro- and microelectronics with the potential for large-scale integration, optics, communications, and computer technology and particularly to the materials for these and other related fields. The present invention provides an anisotropic semiconductor film on a substrate, comprising at least one solid layer of material that comprises predominantly planar graphene-like carbon-based structures and possesses anisotropy of conductivity, and wherein the layer thickness is in a range from approximately 5 nm to 1000 nm.

Abstract: Organic semiconductor devices exhibit desirable mobility characteristics. In connection with various example embodiments, a monolayer of methyl-terminated molecules exhibits density characteristics that are sufficient to promote two-dimensional growth of organic semiconductor material formed thereupon. In some applications, the methyl-terminated molecules are sufficiently dense to dominate inter-layer interactions between layers of the organic semiconductor material.

Abstract: A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer.

Abstract: Disclosed is materials design for prolonging the duration of the low relative dielectric constant of an organic siloxane film having a low relative dielectric constant. Specifically, in an organic siloxane film having a relative dielectric constant of not more than 2.1, the elemental ratio of carbon to silicon in the film is set to not less than 0.10 and not more than 0.55.

Abstract: The invented ink-jet printing method for the construction of thin film transistors using all SWNTs on flexible plastic films is a new process. This method is more practical than all of existing printing methods in the construction TFT and RFID tags because SWNTs have superior properties of both electrical and mechanical over organic conducting oligomers and polymers which are often used for TFT. Furthermore, this method can be applied on thin films such as paper and plastic films while silicon based techniques cannot be used on such flexible films. These are superior to the traditional conducting polymers used in printable devices since they need no dopant and they are more stable. They could be used in conjunction with conducting polymers, or as stand-alone inks.

Abstract: The disclosed subject matter provides a techniques for precisely and/or functionally cutting carbon nanotubes, e.g., single walled carbon nanotubes (“SWNTs”) and integrating a single nucleic acid molecule (e.g., a DNA molecule) into a gap formed into the carbon nanotubes. In one aspect, a method of fabricating a molecular electronic device includes disposing a SWNT on a base layer, forming a gap in the SWNT using a lithographic process, and disposing a single DNA strand across the gap so that each end of the nucleic acid contacts a gap termini. The disclosed subject matter also provides techniques for measuring the electrical properties (charge transport) of a DNA molecule which is integrated into an SWNT. Furthermore, a molecular electronic device including an SWNT with an integrated nucleic acid molecule is disclosed.

Abstract: Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.

Abstract: The present invention relates to a process for producing a carbon nanotube (CNT) mat on a conductive or semiconductor substrate. According to this process, a catalytic complex comprising at least one metal layer is firstly deposited on said substrate. Said metal layer then undergoes an oxidizing treatment. Finally, carbon nanotubes are grown from the metal layer thus oxidized. The present invention also relates to a process for producing a via using said CNT mat production process.

Abstract: Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices.

Abstract: Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.

Abstract: A novel phenanthroline compound is provided which is represented by the general formula [I]: (wherein R1, R2, R3, R4, R5 and R6 are the same or different and each is selected from a hydrogen atom, an unsubstituted or substituted alkyl group, an unsubstituted or substituted aralkyl group, an unsubstituted or substituted aryl group, an unsubstituted or substituted heterocyclic group, and a halogen atom; and Ar1 and Ar2 are the same or different and each is selected from an unsubstituted or substituted fluorenyl group, an unsubstituted or substituted fluoranthenyl group, an unsubstituted or substituted perylenyl group, and an unsubstituted or substituted carbazolyl group). An organic light emitting device using the phenanthroline compound is also provided that has a light output with a high efficiency and a high luminance and has a high long-term durability.

Abstract: Light emitting materials comprising multinuclear metal complexes comprising at least two metal atoms and a metal bridging ligand bound to said at least two metal atoms. It relates more particularly to a multinuclear complex of Formula (I): {-[L]2M-B-}n, wherein L is a bidentate ligand; M represents a transition metal having an atomic number of at least 40, and each M can be the same or different at each occurrence; B is a 2-connecting short metal bridging ligand bound to said at least two metal atoms, where the metal bridging ligand comprises coordinating atoms independently selected from the group consisting of nitrogen, phosphorous, carbon, oxygen, sulphur and selenium in 1,2 or 1,3 mutual position.(1,2-? or 1,3-? bonding mode); and n is an integer larger than 1.

Abstract: The present invention relates to a novel anthracene derivative and an organic electronic device using the same. The anthracene derivative can act as a hole injecting, hole transporting, electron injecting and transporting, or light emitting material in an organic light emitting device and an organic electronic device. In particular, the anthracene derivative can act as a light emitting host. The organic electronic device according to the present invention has excellent characteristics in views of efficiency, the driving voltage, and the stability.

Abstract: A gated electrical device includes a non-conductive substrate and a graphene structure disposed on the non-conductive substrate. A metal gate is disposed directly on a portion of the graphene structure. The metal gate includes a first metal that has a high contact resistance with graphene. Two electrical contacts are each placed on the graphene structure so that the metal gate is disposed between the two electrical contacts. In a method of making a gated electrical device, a graphene structure is placed onto a non-conductive substrate. A metal gate is deposited directly on a portion of the graphene structure. Two electrical contacts are deposited on the graphene structure so that the metal gate is disposed between the two electrical contacts.

Abstract: A stress-engineered microspring is formed generally in the plane of a substrate. A nanowire (or equivalently, a nanotube) is formed at the tip thereof, also in the plane of the substrate. Once formed, the length of the nanowire may be defined, for example photolithographically. A sacrificial layer underlying the microspring may then be removed, allowing the engineered stresses in the microspring to cause the structure to bend out of plane, elevating the nanowire off the substrate and out of plane. Use of the nanowire as a contact is thereby provided. The nanowire may be clamped at the tip of the microspring for added robustness. The nanowire may be coated during the formation process to provide additional functionality of the final device.

Abstract: The present invention generally relates to the fabrication of molecular electronics devices from molecular wires and Single Wall Nanotubes (SWNT). In one embodiment, the cutting of a SWNT is achieved by opening a window of small width by lithography patterning of a protective layer on top of the SWNT, followed by applying an oxygen plasma to the exposed SWNT portion. In another embodiment, the gap of a cut SWNT is reconnected by one or more difunctional molecules having appropriate lengths reacting to the functional groups on the cut SWNT ends to form covalent bonds. In another embodiment, the gap of a cut SWNT gap is filled with a self-assembled monolayer from derivatives of novel contorted hexabenzocoranenes. In yet another embodiment, a device based on molecular wire reconnecting a cut SWNT is used as a sensor to detect a biological binding event.

Abstract: According to the present invention, a liquid crystal semiconductor capable of exhibiting a highly ordered smectic phase at approximately room temperature, being used for formation of a smectic liquid crystal thin film that is stable at room temperature by a solution process, and showing excellent ambipolar charge-transporting properties, a thin film transistor comprising the same, and the like are provided. Also, the following are provided: a smectic liquid crystal compound represented by the following general formula (1) wherein R1 represents a straight-chain alkyl group having 1 to 8 carbon atoms, R2 represents an alkyl or alkoxy group having 1 to 8 carbon atoms, and “n” is an integer of 0 to 3; an ambipolar charge-transporting material comprising the smectic liquid crystal compound; an organic semiconductor thin film having a thin film layer comprising the smectic liquid crystal compound; and a thin film transistor comprising the organic semiconductor thin film.

Abstract: Use of transition metal complexes of the formula (I) in organic light-emitting diodes where: M1 is a metal atom; carbene is a carbene ligand; L is a monoanionic or dianionic ligand; K is an uncharged monodentate or bidentate ligand selected from the group consisting of phosphines; CO; pyridines; nitriles and conjugated dienes which form a ? complex with M1; n is the number of carbene ligands and is at least 1; m is the number of ligands L, where m can be 0 or ?1; o is the number of ligands K, where o can be 0 or ?1; where the sum n+m+o is dependent on the oxidation state and coordination number of the metal atom and on the denticity of the ligands carbene, L and K and also on the charge on the ligands carbene and L, with the proviso that n is at least 1, and also an OLED comprising these transition metal complexes, a light-emitting layer comprising these transition metal complexes, OLEDs comprising this light-emitting layer, devices comprising an OLED according to the present invention, and specific tr

Abstract: A method for fabricating a carbon-enriched film includes the following steps. First, a substrate is provided. Next, a CFx film (fluorinated carbon films) containing carbon-fluoride bonded molecules is formed on the substrate. Next, a treatment process is performed on the CFx film to convert the carbon-fluoride bonded molecules into carbon-carbon bonded molecules.