Abstract: A method for producing a hard bias (HB) structure that stabilizes a free layer in an adjacent spin valve is disclosed. The HB structure includes a composite seed layer and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x laminate. (Co/Ni)x deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent processing. After initialization, HB magnetization direction is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.

Abstract: Methods of making write poles for perpendicular magnetic recording write heads. The bevel angle of the write pole for a perpendicular magnetic recording write head affects the performance of the write head. By forming reinforcement layer on the polymeric underlayer mask to enhance the mask durability during ion mill and tapering the polymeric underlayer above the non-magnetic mill mask layer using oxygen and nitrogen based reactive ion etch process, the bevel angle of the magnetic write pole can be increased greatly to meet the demands of the next and future generations of magnetic recording write heads.

Abstract: A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield (deposited there-over) to be very thin.

Abstract: The main magnetic pole piece of a magnetic head for perpendicular magnetic recording preferably has an inverted trapezoidal shape in order to maintain a sufficient recording magnetic field. Embodiments of the present invention enhance the covering power of the protective film around the main magnetic pole piece of the magnetic head and thereby ensure reliability even when the main magnetic pole piece has such a shape. In one embodiment, the protective film for protecting the main magnetic pole piece is formed by a sputtering apparatus while applying a bias, or it is formed by a carousel type sputtering apparatus or the chemical vapor deposition (CVD) technique.

Abstract: A method for forming a head having a trailing shield that includes forming a gap layer above a pole, forming a mask above the gap layer, and forming a trailing shield above the gap layer and adjacent the mask, a throat height of the trailing shield being defined between the mask.

Abstract: A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ? to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.

Abstract: A method of manufacturing a magnetic head is disclosed. The steps of manufacture include the formation of an underlying layer made of a material whose etching rate of ion beam etching is higher than that of a magnetic alloy used to make a pole layer, and the formation of a magnetic layer, which includes a portion of the magnetic layer to be etched that will be formed into a track width defining portion by making its side surfaces sloped through etching. The magnetic layer is formed such that the portion to be etched is disposed on the underlying layer. The side surfaces of the portion to be etched by the ion beam etching are etched so that the magnetic layer is formed into the pole layer and so that the end face of the track width defining portion located in the medium facing surface has a width that decreases with decreasing distance from the substrate.

Abstract: A pole layer has an end face located in a medium facing surface, allows a magnetic flux corresponding to a magnetic field generated by a coil to pass therethrough, and generates a write magnetic field. A shield includes a first layer having an end face located in the medium facing surface at a position forward of the end face of the pole layer along a direction of travel of a recording medium, and a second layer disposed between at least part of the coil and the medium facing surface and magnetically connected to the first layer. The second layer has an end face closer to the medium facing surface, and this end face is located at a distance from the medium facing surface. A nonmagnetic layer made of an inorganic insulating material is provided between the end face of the second layer and the medium facing surface, and a photoresist layer is provided between the end face of the second layer and the nonmagnetic layer.

Abstract: A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFez layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ? to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.

Abstract: In a magnetic sensor, a lower terminal layer, a magnetosensitive layer, and a cover film are simultaneously patterned into substantially the same size. The opposing surface of the lower terminal layer, which opposes the magnetosensitive film is substantially superposed on one opposing surface of the magnetosensitive film. The opposing surface of the upper terminal layer, which opposes the magnetosensitive film is formed into a shape smaller than and included in the other opposing surface of the magnetosensitive film. This implements a magnetic sensor which uses a CPP structure and is yet readily processible and which includes a substantially accurate fine CPP structure in accordance with a desired output.

Abstract: A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, fabricating a metallic spacer layer and oxidizing a portion of the spacer layer in an environment including at least oxygen and a gas inert with respect to the spacer layer to provide an oxide layer. The method and system also include creating a free layer. The oxide layer is between a remaining metallic portion of the spacer layer and the free layer. In one aspect, the system includes a chamber and a gas diffusion apparatus within the chamber. The gas diffusion apparatus includes a plurality of nozzles and defines a plane. The gas exits each of the plurality of nozzles in a cone having an apex angle. The nozzles are directed at a nozzle tilt angle of at least half of the apex angle from the plane and the spacer layer.

Abstract: A slider includes a slider main body and a thin-film magnetic head element. The slider main body has an air bearing surface, an air inflow end, and an air outflow end. The air bearing surface has a first part closer to the air outflow end, a second part closer to the air inflow end, and a border part between the first part and the second part. The second part is slanted against the first part so that the entire air bearing surface has a convex shape bent at the border part.

Abstract: A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 ? and the PtMn layer has a thickness of approximately 120 ?. An alternative fabrication process of the Si layer includes the overdeposition of the layer to a first thickness of from 15 ? to 45 ? followed by the etching back of the seed layer of approximately 5 ? to approximately 15 ? to its desired final thickness of approximately 20 ?. The Si layer results in an improved crystal structure to the subsequently fabricated PtMn and other spin valve sensor layers, such that the fabricated spin valve is thinner and exhibits increased ?R/R and reduced coercivity.

Abstract: A thin film head comprising a GMR element formed of an antiferromagnetic layer, a pinning layer, a nonmagnetic conductive layer and a free magnetic layer; and a pair of the right and the left laminated longitudinal biasing layers, each of the layers containing a hard magnetic layer, a nonmagnetic layer and a soft magnetic layer provided on said free magnetic layer of GMR element. Said hard magnetic layer and said soft magnetic layer are antiferromagnetically exchange-coupled via said nonmagnetic layer, and said hard magnetic layer and said free magnetic layer locating next to said hard magnetic layer are ferromagnetically coupled. The present invention contains also a method for manufacturing the thin film head.

Abstract: A method for manufacturing a magnetic recording head includes the steps of forming a first lifting layer and a second lifting layer on a bottom core layer, forming an inorganic insulating layer in a gap between the first lifting layer and the second lifting layer, forming a groove in the inorganic insulating layer to form a coil layer, and forming the coil layer in the groove and over the groove by plating.

Abstract: A magnetoresistive thin film head comprises a magnetoresistive element including an antiferromagnetic layer, a pinned layer, a nonmagnetic conductive layer and a free magnetic layer, and a pair of the right and the left laminated transverse biasing layers, each including a nonmagnetic layer, a ferromagnetic layer and an antiferromagnetic layer, provided on the free magnetic layer constituting said magnetoresistive element. The layer thickness of said nonmagnetic layer has been established to a certain specific value so that magnetizing direction in said free magnetic layer opposing to the ferromagnetic layer via said nonmagnetic layer assumes a direction that is opposite to that of said ferromagnetic layer.

Abstract: A method for producing a magnetic head, including the steps of forming a magnetic body on a substrate, the magnetic body including a principal plane facing the substrate and a rear plane opposite to the principal plane; applying a beam to the rear plane of the magnetic body and forming a portion defining a hole extending from the rear plane to the principal plane; forming a magnetic gap in the hole; and separating the magnetic body and the magnetic gap from the substrate and forming medium facing surface substantially coplanar with the principal plane.

Abstract: An antiferromagnetic stabilization scheme is employed in a magnetic head for magnetically stabilizing a free layer of a spin valve. This is accomplished by utilizing an antiferromagnetic oxide film below a spin valve sensor in a read region and first and second lead layers in end regions and a ferromagnetic film in each of the lead layers that exchange couples to the antiferromagnetic oxide film in the end regions. The ferromagnetic films are pinned with their magnetic moments oriented parallel to an air bearing surface (ABS) of the magnetic head. The ferromagnetic film magnetostatically couples to the free layer which causes the free layer to be in a single magnetic domain state. Accordingly, when the free layer is subjected to magnetic incursions from a rotating disk in a disk drive, the free layer maintains a stable magnetic condition so that resistance changes of the free layer are not altered by differing magnetic conditions of the free layer.

Abstract: An antiferromagnetic stabilization scheme is employed in a magnetic head for magnetically stabilizing a free layer of a spin valve. This is accomplished by utilizing an antiferromagnetic oxide film below a spin valve sensor in a read region and first and second lead layers in end regions and a ferromagnetic film in each of the lead layers that exchange couples to the antiferromagnetic oxide film in the end regions. The ferromagnetic films are pinned with their magnetic moments oriented parallel to an air bearing surface (ABS) of the magnetic head. The ferromagnetic films magnetostatically couple to the free layer which causes the free layer to be in a single magnetic domain state. Accordingly, when the free layer is subjected to magnetic incursions from a rotating disk in a disk drive, the free layer maintains a stable magnetic condition so that resistance changes of the free layer are not altered by differing magnetic conditions of the free layer.

Abstract: A method of making a dual spin valve sensor includes the steps of forming first and second pinned layer structures, forming antiferromagnetic first and second pinning layers exchange coupled to the first and second pinned layer structures, forming an antiparallel (AP) coupled free layer structure between the first and second pinned layer structures, forming nonmagnetic conductive first and second spacer layers between the AP coupled free layer structure and the first and second pinned layer structures respectively, and a making of the AP coupled free layer structure includes the steps of forming ferromagnetic first, second and third antiparallel (AP) coupled free layers and forming a first antiparallel coupling layer between the first and second AP coupled free layers and a second antiparallel coupling layer between the second and third AP coupled free layers.

Abstract: A spin valve sensor with a continuous junction is provided which has a sensor portion of a free layer longitudinally biased by first and second AFM biasing layers that are exchange coupled to first and second side portions of the free layer and a sensor portion of an AFM pinning layer that pins a sensor portion of a pinned layer perpendicular to the ABS in either a top spin valve or a bottom spin valve sensor.

Abstract: A spin valve sensor has a pinned layer structure that has a net positive stress induced uniaxial anisotropy that promotes a pinning of the pinned layer structure in a pinned direction for stabilizing the pinning of the pinned layer structure at high temperatures near to a blocking temperature of a pinning layer which is exchange coupled to the pinned layer.

Abstract: A merged magnetic head has a top first pole tip layer and a bottom second pole tip layer which are located entirely between an air bearing surface and a coil layer. A write gap layer separates the pole tip layers from one another at the ABS. A zero throat height (ZTH) defining layer is located adjacent the top gap layer between the pole tip layers and is recessed from the ABS so as to further separate the pole tip layers from one another at a location recessed from the ABS so as to define the zero throat height of the write head where the first and second pole pieces first commence to separate from one another after the ABS.

Abstract: A method of manufacturing the same in an accurate and stable manner, in which a magnetic path length of a thin film coil is shortened by decrease a distance between adjacent coil windings of at least one layer thin film coil. On a first magnetic layer 37, is formed an insulating layer 38, and then a first thin film coil half 40 is formed on the surface of the insulating layer such that a distance between successive coil windings is large. Then, a second thin film coil half 44 is formed such that its coil windings situate between successive coil windings of the first thin film coil half. First and second coil halves 47 and 48 of a second layer thin film coil are formed on the first layer thin film coil in a similar manner. After forming an insulating layer 52, a second magnetic layer 53 and overcoat layer 54 are formed.

Abstract: A free layer for a spin valve sensor includes a cobalt iron (CoFe) film which has an easy axis oriented perpendicular to an air bearing surface (ABS) of a read head and a nickel iron (NiFe) film which has an easy axis oriented parallel to the ABS and parallel to the major planes of the thin film layers. In a further embodiment the free layer is annealed at a high temperature in the presence of a field which is oriented perpendicular to the ABS.

Abstract: A method of making rhodium (Rh) lead layers for a read sensor comprises a first step of obliquely ion beam sputtering the rhodium (Rh) lead layer followed by a second step of annealing. This method results in rhodium (Rh) lead layers which have reduced stress and less resistance, making them highly desirable for lead layers of a sensor in a read head.

Abstract: A spin-valve magnetoresistive element includes a plurality of layers. The magnetic moment of a first pinned magnetic layer is smaller than the magnetic moment of a second pinned magnetic layer. In this case, a magnetic field of 100 to 1,000 Oe is applied in a direction opposite to the direction for which obtaining of magnetization for the first pinned magnetic layer is desired, or a magnetic field of 5 kOe or greater is applied in the same direction as the direction for which obtaining of magnetization for the first pinned magnetic layer is desired. Thus, a first magnetization of the first pinned magnetic layer and the magnetic moment of a second pinned magnetic layer can be maintained in an antiparallel state.