Rotation Of Crystal Axis (e.g., Cut Angle) Patents (Class 310/360)
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Patent number: 5646468Abstract: The present invention directed to a SAW device comprising a diamond layer and an LiTaO.sub.3 layer, which can be operated at the frequency of 3 GHz or higher, with superior durability and less energy loss. The SAW device for 1st mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: a diamond layer, an interdigital transducer formed onto the diamond layer, and a polycrystalline C-axis-oriented LiTaO.sub.3 layer formed over the interdigital transducer; wherein the SAW device satisfies a relationship of 0.4.ltoreq.kh.sub.1 .ltoreq.1.2, where a parameter kh.sub.1 is defined as kh.sub.1 =2.pi.(t.sub.1 /.lambda.), and t.sub.1 (.mu.m) is the thickness of the LiTaO.sub.3 layer.Type: GrantFiled: June 7, 1996Date of Patent: July 8, 1997Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hideaki Nakahata, Kenjiro Higaki, Satoshi Fujii, Akihiro Hachigo, Shin-ichi Shikata
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Patent number: 5569548Abstract: When a zinc oxide piezoelectric crystal film is epitaxially grown on an R-plane sapphire substrate by sputtering, a target containing not more than 4.5 percent by weight of Cu with respect to the total content of Zn and Cu is employed so that the zinc oxide piezoelectric film contains Cu. Thus, it is possible to obtain a zinc oxide piezoelectric crystal film having excellent orientation.Type: GrantFiled: August 2, 1994Date of Patent: October 29, 1996Assignee: Murata Manufacturing Co., Ltd.Inventors: Jun Koike, Hideharu Ieki
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Patent number: 5565724Abstract: An orientational material including: diamond, and a ZnO film disposed on a surface of (111) orientational diamond provided by the diamond. Such an orientational material may suitably be used as a component for fabricating a surface acoustic wave device utilizing diamond.Type: GrantFiled: December 22, 1994Date of Patent: October 15, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventors: Akihiro Hachigo, Hideaki Nakahata, Kenjiro Higaki, Satoshi Fujii, Shin-ichi Shikata
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Patent number: 5446333Abstract: An ultrasonic transducer unit for use in pulse-echo ultrasonic investigation has a plurality of components including a piezoelectric ultrasonic wave transmitting element, an acoustoelectric ultrasonic wave receiving element and electrodes therefor. To provide a compact and efficient transducer, these components are bonded together in an integrated multilayer structure in which the transmitting element and receiving element are superimposed in the direction of propagation of transmitted and received ultrasonic waves. The receiving element may be a ZnO single crystal. An insulating layer isolates two components from each other.Type: GrantFiled: September 15, 1993Date of Patent: August 29, 1995Assignee: NGK Insulators, Ltd.Inventors: Yoshihiko Ishida, Makoto Tani
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Patent number: 5434465Abstract: A surface acoustic wave device comprises a piezoelectric substrate of lithium tetraborate single crystal, and a metal film formed on the surface of the piezoelectric substrate for exciting, receiving, reflecting and/or propagating surface acoustic waves, the metal film being so formed that a cut angle of the surface of the piezoelectric substrate and propagation direction of the surface acoustic wave are an Eulerian angle representation of (0.degree.-45.degree., 30.degree.-90.degree., 40.degree.-90.degree.) and directions equivalent thereto, the surface acoustic wave having higher propagation velocity than Rayleigh waves and leaky waves, and a characteristic of radiating part of energy of the surface acoustic wave into the piezoelectric surface while propagating.Type: GrantFiled: May 2, 1994Date of Patent: July 18, 1995Assignee: Nikko Kyondo Co., Ltd.Inventors: Takahiro Sato, Hidenori Abe
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Patent number: 5386168Abstract: A Polarization-Sensitive Shear Wave Transducer Structure utilizes a 4 part MuSLE electrode formed on a top surface of a dilithium tetraborate (Li.sub.2 B.sub.4 O.sub.7) substrate that acts as a transducer forming a body. Electrode gaps of the MuSLE electrode are aligned along the X.sub.1 ' and X.sub.3 ' axes of the dilithium tetraborate substrate. The substrate orientation is chosen along the degeneracy locus occurring in the primitive region between the end points (YXl) 19.degree. and (YXw) 27.degree.. The body is bonded to a test object and segments of the MuSLE electrode are coupled to a power source allowing an excitation voltage to create a lateral-field driving a shear wave of selectable polarization. The segments of the MuSLE electrode can also be coupled to a means for detecting a voltage allowing a shear wave incident on the transducer to be detected.Type: GrantFiled: April 29, 1994Date of Patent: January 31, 1995Assignee: The United States of America as represented by the Secretary of the ArmyInventor: John A. Kosinski
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Patent number: 5369327Abstract: For surface acoustic wave devices temperature-compensated piezoelectric crystal elements with one or more planar faces are used. An improvement in temperature stability may be expected if the crystal element is made from GaPO.sub.4 and the planar face is defined by Euler angles .lambda. in the range of 0.degree., .mu. in the range of 40.degree. to 75.degree., i.e. preferably 50.degree. to 60.degree., and .theta. in the range of 0.degree..Type: GrantFiled: February 17, 1994Date of Patent: November 29, 1994Assignee: AVL Gesellschaft Fur Verbrennungskraftmaschinen und Messtechnik m.b.H Prof.Dr.Dr.h.c. Hans ListInventors: Wolfgang Wallnofer, Peter W. Krempl
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Patent number: 5304459Abstract: An AT-cut crystal oscillating reed formed by etching an AT-cut crystal wafer is provided. The wafer has a rotational parallel cut obtained by rotating a parallel cut by an angular degree of .theta..degree. relative to the X-axis of the wafer. The etching cross-section of the AT-cut crystal oscillating reed has a surface at an angle about 90.degree. from the front or back surface of the AT-cut crystal oscillating reed. This AT-cut crystal oscillating reed exhibits uniform characteristics and excellent reliability. Also provided is an AT-cut crystal oscillating reed with a low CI value. Finally, a method of etching an AT-cut crystal oscillating reed from an AT-cut crystal wafer is provided. A corrosion resisting film with gaps coats the wafer and is used in the etching process. In a preferred embodiment, the thickness of the wafer is designated t, the width of the gaps in the corrosion resisting films is designated l, and l.gtoreq.t/tan .theta..Type: GrantFiled: June 19, 1992Date of Patent: April 19, 1994Assignee: Seiko Epson CorporationInventors: Hideaki Nakamura, Eiji Karaki
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Patent number: 5302878Abstract: An acoustic rheometer working in the high frequency range comprises a torsional-mode transducer which is a crystal of the sillenites class, having a height that determines the resonance frequencies of the mode of torsion, and being provided with an electrical excitation means. Furthermore, the sensor is a rod made of an iron/nickel alloy having a very low thermoelastic coefficient. The rod is rigidly connected to the transducer. The respective diameters of the transducer and of the sensor are chosen so that the coefficient of reflection at the transducer/sensor interface is zero. The rheometer can be used in ink-based printing systems.Type: GrantFiled: October 30, 1992Date of Patent: April 12, 1994Assignee: Imaje S.A.Inventors: Arthur Soucemarianadin, Renaud Gaglione, Pierre Attane
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Patent number: 5250871Abstract: An arrangement of crystal resonators that provides significantly reduced net resonator vibration sensitivity by arranging the crystallographic axes of some of the resonators to have antiparallel relationship, without regard to the acceleration sensitivity vector of any of the crystal resonators.Type: GrantFiled: June 13, 1991Date of Patent: October 5, 1993Assignee: Westinghouse Electric Corp.Inventors: Michael M. Driscoll, Norman G. Matthews
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Patent number: 5248912Abstract: There is disclosed herein an integrated scanning tunneling microscope and an integrated piezoelectric transducer and methods for making both. The device consists of one or two arm piezoelectric bimorph cantilevers formed by micromachining using standard integrated circuit processing steps. These cantilevers are attached to the substrate at one area and are free to move under the influence of piezoelectric forces which are caused by the application of appropriate voltages generated by control circuitry and applied to pairs of electrodes formed as an integral part of the bimorph cantilever structure. The electric fields caused by the control voltages cause the piezoelectric bimorphs to move in any desired fashion within ranges determined by the design. The bimorph cantilevers have tips with very sharp points formed thereon which are moved by the action of the control circuit and the piezoelectric bimorphs so to stay within a very small distance of a conducting surface.Type: GrantFiled: February 11, 1992Date of Patent: September 28, 1993Assignee: Stanford UniversityInventors: Mark Zdeblick, Thomas R. Albrecht
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Patent number: 5214668Abstract: A temperature compensated oscillator and a temperature detector have a temperature sensor having a single case in which a pair of AT cut crystal resonator having substantially the same natural oscillation frequency and different cut angles from each other are accommodated. The crystal resonators each constitutes the resonance circuit of respective one of two oscillation circuits. A difference in frequency between the output frequencies of the oscillation circuits is representative of a detected temperature.Type: GrantFiled: September 30, 1991Date of Patent: May 25, 1993Assignee: Nec CorporationInventors: Kiyoshi Satou, Takaaki Hara
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Patent number: 5142186Abstract: A single crystal bender actuator for selectively positioning a movable precision optical or acoustical component is described which comprises a single crystal of barium titanate, barium strontium titanate, barium lead titanate, potassium niobate tantalate, lead titanate-lead magnesium niobate or other material in which a special domain structure can be induced to produce a very high strain bimorph configuration, the single crystal operatively interconnecting support structure and the movable component, and means for selectively applying an electric field of controllable field strength to the crystal.Type: GrantFiled: August 5, 1991Date of Patent: August 25, 1992Assignee: United States of America as Represented by the Secretary of the Air ForceInventors: Leslie E. Cross, Wuyi Pan, Qiming Zhang
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Patent number: 5081389Abstract: A Lithium Tantalate crystal, defined by the Euler angles lambda (.lambda.) equal to about 0.degree. and mu (.mu.) equal to about 90.degree. with an acoustic wave propagation direction angle theta (.theta.) in the range of plus 130.degree. to plus 150.degree. and preferably equal to about plus 141.25.degree., offers unique properties for surface acoustic wave device applications.Type: GrantFiled: November 30, 1990Date of Patent: January 14, 1992Assignee: Ascom Zelcom AG.Inventors: Benjamin P. Abbott, Thor Thorvaldsson
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Patent number: 5028936Abstract: A pulsed droplet ink jet printer has at least one channel communicating with a nozzle. The side wall of the channel is formed as a shear mode piezo-electric actuator comprising an unpoled crystalline material. Electrodes applied to the actuator enable an electric field to be applied such that the actuator moves in transversely of the field to change the liquid pressure in the channel and thereby eject a droplet through the nozzle. The actuator can be made in two parts so as to deform, in cross section, to a chevron formation.Type: GrantFiled: September 1, 1989Date of Patent: July 2, 1991Assignee: Xaar Ltd.Inventors: W. Scott Bartky, Anthony D. Paton, Stephen Temple, A. John Michaelis
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Patent number: 4992694Abstract: In order to improve the temperature stability of piezoelectric and elastic properties of piezoelectric crystal elements based on GaPO.sub.4, preferably for resonator applications, and to facilitate alignment when the crystal elements are cut from the raw crystal bars, the proposal is put forward that the principal plane H of the crystal element be parallel to a cutting plane, which is generated by rotating a hexagonal prism face of a raw crystal bar, which lies parallel to the optical axis, around one of the two-fold crystallographic symmetry axes a.sub.1, a.sub.2 or a.sub.3 through an angle .theta. of -5.degree. to -22.degree..Type: GrantFiled: November 17, 1989Date of Patent: February 12, 1991Assignee: AVL Gesellschaft fur Verbrennungskraftmaschinen und Messtechnik m.b.H. Prof.Dr.Dr.h.c. Hans ListInventors: Engel Gunter, Peter W. Krempl
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Patent number: 4990818Abstract: An improved transducer is obtained by providing a plate of lithium tetrabte with a doubly rotated orientation of .phi..congruent.17.degree. to 21.degree. and .theta..congruent.54.degree. to 58.degree. where doubly rotated orientations are described by the IEEE notation widely known in the art as (YXwl).phi./.theta..Type: GrantFiled: October 23, 1989Date of Patent: February 5, 1991Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Arthur Ballato, John A. Kosinski
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Patent number: 4950937Abstract: An improved resonator is obtained by providing a plate of lithium tetraboe with a doubly rotated orientation of .phi..congruent.38.degree. to 42.degree. and .theta..congruent.30.degree. to 36.degree. where doubly rotated orientations are described by the IEEE notation widely known in the art as (YXwl).phi./.theta..Type: GrantFiled: September 13, 1989Date of Patent: August 21, 1990Assignee: The United States of America as represented by the Secretary of the NavyInventors: Arthur Ballato, John A. Kosinski
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Patent number: 4902926Abstract: In piecoelectric measuring elements comprising two or more crystal elements that are jointly subject to the mechanical variable to be measured and are provided with electrically conductive electrodes on opposite surfaces located essentially normal to the electric (x) axes of these crystal elements, disadvantages arising from shearing stresses can be prevented by using crystal elements (2) from crystals of point group 32, in which exist two opposite types of enantiomorphism, l and r, in which part of the crystal elements used belong to one of the two enantiomorphic types l or r, and have one of the two absolute orientations of the x-axis, .alpha..sub.1 or .alpha..sub.2, while the remaining crystal elements belong to the opposite enantiomorphic type and have the opposite orientation of the x-axis.Type: GrantFiled: November 10, 1988Date of Patent: February 20, 1990Assignee: AVL Gesellschaft fur Verbhrennungskraftmaschinen und Messtechnik m.b.H. Prof. Dr. Dr. h.c. Hans ListInventors: Gunter Engel, Peter W. Krempl, Helmut List
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Patent number: 4893049Abstract: Monitoring explosive devices is accomplished with a substantially z-cut lithium niobate crystal in abutment with the explosive device. Upon impact by a shock wave from detonation of the explosive device, the crystal emits a current pulse prior to destruction of the crystal. The current pulse is detected by a current viewing transformer and recorded as a function of time in nanoseconds. In order to self-check the crystal, the crystal has a chromium film resistor deposited thereon which may be heated by a current pulse prior to detonation. This generates a charge which is detected by a charge amplifier.Type: GrantFiled: May 29, 1986Date of Patent: January 9, 1990Assignee: The United States of America as represented by the United States Department of EnergyInventors: Charles H. Bundy, Robert A. Graham, Stephen F. Kuehn, Richard R. Precit, Michael S. Rogers
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Patent number: 4868447Abstract: Laminates of polyvinylidene fluroride (PVDF) are employed as piezoelectric sensors and actuators which can sense and/or generate complex motions that include bending, stretching, and twisting components. The laminates can be attached directly to a mechanical structure whose motions are to be sensed and/or controlled. By skewing the principal axes of each of the lamina in the laminate with respect to one another, the laminate is responsive not only to bending motions, but to torsional motions as well. Surface electrodes are disposed on the top and bottom sides of each of the lamina to either sense voltage generated by the lamina in response to motion imparted thereto, or supply voltage to the lamina to induce motion therein. The shape of the surface electrode patterns can be varied to control the particular components of motion to which each of the lamina is responsive (e.g., bending modes). The polarization profile in each of the lamina can also be varied for this purpose.Type: GrantFiled: September 11, 1987Date of Patent: September 19, 1989Assignee: Cornell Research Foundation, Inc.Inventors: Chih-Kung Lee, Francis C. Moon
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Patent number: 4803392Abstract: There is provided a piezoelectric transducer comprising a substrate having a single crystal plate comprising strontium titanate or magnesium oxide, a first electrode comprising metal films so formed on the substrate as to leave openings exposing the surface of the substrate, a piezoelectric thin film comprising lead titanate as the main component formed so as to cover the openings and the first electrode, and a second electrode formed on the piezoelectric thin film.Type: GrantFiled: August 18, 1987Date of Patent: February 7, 1989Assignee: Hitachi, Ltd.Inventors: Keiko Kushida, Hiroshi Takeuchi, Toshio Kobayashi, Kazumasa Takagi, Kenzo Susa
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Patent number: 4772817Abstract: A piezoelectric crystal without spontaneous polarization such as Li.sub.2 B.sub.4 O.sub.7 or quartz crystal is jointed to a cathode on the side opposite to the tip thereof to finely drive the cathode. The surface observation apparatus mounting the cathode makes it possible to observe the surface of a sample at high speeds.Type: GrantFiled: June 2, 1987Date of Patent: September 20, 1988Assignee: Hitachi, Ltd.Inventors: Toshiyuki Aida, Hiroshi Takeuchi, Sumio Hosaka, Shigeyuki Hosoki, Tadashi Ikeda
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Patent number: 4755314Abstract: The x-cut single crystal wafer of lithium tantalate according to the invention is characterized by the orientation flat formed in a specific crystallographic orientation. The plane of the orientation flat should be (A) in parallel with the (018) plane or a plane which is in parallel with the x-axis and makes an angle of 15.degree. or smaller with the (018) plane or (B) in parallel with a plane which is in parallel with the x-axis and perpendicular to the (018) plane or a plane which is in parallel with the x-axis and makes an angle of 15.degree. or smaller with the plane which is in parallel with the x-axis and perpendicular to the (018) plane. In contrast to conventional lithium tantalate single crystal wafers provided with an orientation flat in a direction parallel to the 112.degree.Type: GrantFiled: December 3, 1985Date of Patent: July 5, 1988Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Susumu Sakaguchi, Masaaki Iguchi
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Patent number: 4749900Abstract: The invention relates to a multi-layered piezoelectric acoustic transducer for generating layers of the same piezoelectric material are provided such tool alternate layers have different crystallographic orientations and different piezoelectric coupling coefficients. The layers may be provided so that alternate layers have crystallographic orientations which provide maximum electro-acoustic coupling and layers which provide minimum electro-acoustic coupling.Type: GrantFiled: November 17, 1986Date of Patent: June 7, 1988Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Babur B. Hadimioglu, Butrus T. Khuri-Yakub, Calvin F. Quate
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Patent number: 4719383Abstract: An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/.degree.C.Type: GrantFiled: September 30, 1986Date of Patent: January 12, 1988Assignee: The United States of America as represented by the United States Department of EnergyInventors: Jin S. Wang, Kenneth M. Lakin, Allen R. Landin
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Patent number: 4701661Abstract: SC cut crystal resonators having lateral field excitation are disclosed. An SC cut quartz crystal blank is a doubly rotated Y cut which has the very valuable characteristic that its resonance frequency is stable while under stress, either from temperature gradients or from shock and vibration. Because of the threefold symmetry of quartz, and since the SC cut is rotated 22 degrees about the Z axis, there is a Y axis only about 8 degrees from the surface of an SC cut plate. A lateral field directed along or near this axis strongly excites the C mode and very weakly excites the B mode, if at all. The electrodes generating the lateral field are placed on the same major surface of an SC cut quartz crystal disc element and shaped to place the strongest field in the center of the disc element. This has been found to strongly couple to the C mode and suppress all other modes including the B mode and satellite C modes. Spectral purity and Q are enhanced thereby.Type: GrantFiled: May 28, 1985Date of Patent: October 20, 1987Assignee: Frequency Electronics, Inc.Inventors: Arthur W. Warner, Bruce Goldfrank
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Patent number: 4654663Abstract: An angular rate sensor system is disclosed, consisting of a balanced resonant sensor. The sensor consists of a tuning fork of a piezoelectric material, preferably of quartz. The tines of the tuning fork are caused to vibrate electromechanically, for example, by impressing an alternating voltage on a pair of electrodes on each tine. This will cause the tines to vibrate. Any component of angular motion around the axis of the sensor causes a cyclic deflection of the tines at right angles to the normal driven vibration of the tines. If the rotational input to the handle of the sensor is applied through a torsion element, the resulting tine deflection is directed to cyclically rotate the entire sensor along the input/output axis. This deflection can be used for changing the capacitance of a capacitance bridge, or for generating an electric signal, due to the piezoelectric effect resulting from the deflection. Finally, the output signal may consist of a frequency-modulated signal or an optical pick-up may be used.Type: GrantFiled: November 16, 1981Date of Patent: March 31, 1987Assignee: Piezoelectric Technology Investors, Ltd.Inventors: Evert C. Alsenz, William F. Juptner, David F. Macy
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Patent number: 4634913Abstract: An electronic device, such as a Surface Wave, Bulk Wave or pyroelectric device, exploiting the polar nature of an active material in which the active material is lithium tetraborate or a closely related compound for example one which is slightly deficient in Lithium or Boron e.g. (Li.sub.2.-+..delta.1)B.sub.4 O.sub.7 or Li.sub.2 (B.sub.4.-+..delta.2)O.sub.7 where .delta..sub.1 and .delta..sub.2 are small numbers.Type: GrantFiled: February 21, 1985Date of Patent: January 6, 1987Assignee: Plessey Overseas LimitedInventors: Roger W. Whatmore, Iain M. Young
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Patent number: 4583019Abstract: A piezoelectric resonator with a rectangular parallelepiped resonator. A lithium niobate single crystal is used as the resonator chip material. Each of the opposed main surfaces of the resonator chip is arranged to be a surface of a rotated Y-cut plate which is rotated 165.+-.5 degrees about an X-axis. The angle of the longitudinal direction of the resonator chip is arranged to be 90.+-.5 degrees with respect to the X-axis of the rotated Y-cut plate.Type: GrantFiled: May 23, 1984Date of Patent: April 15, 1986Assignee: Fujitsu LimitedInventors: Sumio Yamada, Yoshiro Fujiwara, Noboru Wakatsuki, Yuji Kojima
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Patent number: 4558248Abstract: A temperature-compensated quartz oscillator having a first plate of quartz that carries a first electrode which displays a sensitivity to temperature that exceeds that of the piezoelectric quartz wafer which comprises a first resonator which vibrates at a reference frequency f.sub.M. The first plate cooperates with the first electrode and a third electrode to form a second quartz resonator. Means for applying to the first and third electrodes an excitation electric power to drive the active portion of the first plate according to a mode which is sensitive to temperture, at a frequency f.sub.T close to, but slightly different from, the reference frequency f.sub.M. Means for comparing, which enable comparison of signals at the terminals of the second and third electrodes, and control means for the regulating means for applying an excitation electric power from the active portion of the piezoelectric wafer.Type: GrantFiled: May 2, 1984Date of Patent: December 10, 1985Assignee: Etat FrancaisInventor: Jean P. Valentin
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Patent number: 4542355Abstract: Enhancement of proper phase and insertion loss response, reduction of undesired mode couplings, and greater latitude in the design with respect to energy trapping in filters, in addition to enhancement of the dynamic frequency-temperature compensation, as well as stress-frequency compensation is provided by arranging the electrode gap of a monolithic crystal filter so that it is perpendicular to the projection of the normal coordinate or eigenvector of the mode utilized along with making the side edges of the electrodes parallel to the direction of the normal coordinate projection. For the doubly rotated SC cut of quartz, using the c-mode, the normal coordinate projection angle, i.e. the axis along which the electrodes are aligned, is substantially 8.2.degree. from the rotated plate (X') axis.Type: GrantFiled: November 7, 1984Date of Patent: September 17, 1985Assignee: The United States of America as represented by the Secretary of the ArmyInventor: Arthur Ballato
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Patent number: 4525646Abstract: A lithium tantalate (LiTaO.sub.3) vibrator comprises a lithium tantalate crystal vibratable in the flexural mode and having an electro-mechanical coupling factor within the range 0.04 to 0.10. The crystal may have a tuning fork shape cut from a Z-plate turned an angle of 48.degree. to 55.degree. around the X-axis.Type: GrantFiled: October 24, 1979Date of Patent: June 25, 1985Assignee: Seiko Instruments & Electronics, Ltd.Inventor: Hirofumi Kawashima
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Patent number: 4525643Abstract: A piezoelectric wafer of single crystal berlinite, having a surface defined by an X-axis boule cut at an angle in the range from about 94.degree.-104.degree., provides an improved substrate for a surface acoustic wave device. These cut angles are relatively easy to fabricate, provide excellent temperature compensation in a range from -55.degree. C. to 125.degree. C., and have high piezoelectric coupling coefficient.Type: GrantFiled: October 28, 1983Date of Patent: June 25, 1985Assignee: Allied CorporationInventors: Bruce H. Chai, Dana S. Bailey, John F. Vetelino, Donald L. Lee, Jeffrey C. Andle
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Patent number: 4511817Abstract: A piezoelectric wafer of single crystal berlinite, having a surface defined by an X-axis boule cut at about 85.degree., provides a improved substrate for a surface acoustic wave device. The 85.degree. cut angle is relatively easy to fabricate, provides excellent temperature compensation in a range form 20.degree. C. to 100.degree. C., and has high piezoelectric coupling coefficient.Type: GrantFiled: October 28, 1983Date of Patent: April 16, 1985Assignee: Allied CorporationInventors: Bruce H. Chai, Dana S. Bailey, John F. Vetelino, Donald L. Lee, Jeffrey C. Andle
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Patent number: 4503709Abstract: A pressure sensor having a semiconductor body is disclosed. The sensor comprises a substrate of a compound semiconductor and an epitaxial layer of a mixed crystal, in which different conduction band minima with different effective masses are closely adjacent energywise, particularly from the mixed crystal series gallium-aluminum-arsenic with the composition Ga.sub.1-x Al.sub.x As, in which the aluminum concentration is 0.19.ltoreq.x.ltoreq.0.43. The sensor described has a simplified design and predetermined pressure ranges can be set by varying the concentration of the crystal constituents.Type: GrantFiled: March 7, 1983Date of Patent: March 12, 1985Assignee: Siemens AktiengesellschaftInventor: Wolfgang Ruhle
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Patent number: 4454444Abstract: A piezoelectric resonator which resonates in thickness shear mode. The piezoelectric resonator includes a strip shaped resonance chip made of an X-cut plate of lithium tantalate crystal and having a rectangular cross-section. Electrodes are formed at the center portion with respect to the longitudinal direction of the resonance chip on each of two X-plane surfaces. The width of the electrodes is equal to the width of the resonance chip. The longitudinal direction of the resonance chip inclines with respect to the Y-axis by an angle of 50.degree..+-.2' in the clockwise direction in the X-plane so as to make the longitudinal direction of the resonance chip coincide with the displacement direction of primary oscillation of the crystal. Optimal ratios of the dimensions of the resonance chip and terminal connectors at the ends of the resonance chip are given to reduce spurious response.Type: GrantFiled: February 18, 1983Date of Patent: June 12, 1984Assignee: Fujitsu LimitedInventors: Yoshiro Fujiwara, Sumio Yamada, Hiroshi Hoshino, Noboru Wakatsuki
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Patent number: 4454443Abstract: An arrangement is disclosed for piezoelectric resonators utilizing linear and parallel sides or flats located on the periphery and opposite ends of the resonator. These sides are located normal to the axes wherein collinear forces applied to the resonator produce a desired effect upon its natural resonant frequency. For mechanical sensor applications this effect is maximized while for applications requiring a stable frequency or time base this effect is minimized. The outline peripheral shape of the resonators utilizing this mounting arrangement varies in accordance with the crystallographic orientation present in each resonator.Type: GrantFiled: March 21, 1983Date of Patent: June 12, 1984Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Theodore J. Lukaszek, Arthur Ballato
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Patent number: 4419600Abstract: A stress compensated thickness-shear resonator is of an orientation (yxwl) .phi./.theta. selected from loci of stress compensated orientations provided for both the fast and slow thickness-shear modes of vibration. A stress compensated orientation is used in an oscillator for stable frequency-stress behavior. A stress compensated orientation having large-valued temperature coefficients of frequency is used in a temperature sensor for precision measurements. A stress and temperature compensated orientation is used in a pressure sensor such that the temperature compensated thickness-shear mode is used for pressure measurement while the stress compensated thickness-shear mode is used to compensate for effects of temperature.Type: GrantFiled: May 27, 1981Date of Patent: December 6, 1983Assignee: Schlumberger Technology CorporationInventor: Bikash K. Sinha
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Patent number: 4410822Abstract: A crystal resonator features two crystals mounted such that the acceleration sensitivity vector of one crystal is in an antiparallel relationship to the acceleration sensitivity vector of the other crystal. The composite resonator eliminates acceleration-induced frequency shifts for acceleration in all directions.Type: GrantFiled: June 17, 1982Date of Patent: October 18, 1983Assignee: The United States of America as represented by the Secretary of the ArmyInventor: Raymond L. Filler
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Patent number: 4344010Abstract: An acceleration resistant crystal features two crystals mounted together h at least two axes of each crystal being in antiparallel relationship with respect to corresponding axes of the other crystals. The two crystals can be chiral pairs and thus have three corresponding axes in antiparallel relationship for acceleration resistance in any arbitrary direction with respect to the crystal axes.Type: GrantFiled: October 19, 1979Date of Patent: August 10, 1982Assignee: The United States of America as represented by the Secretary of the ArmyInventors: John R. Vig, Arthur D. Ballato
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Patent number: 4341974Abstract: A piezoelectric crystal element for use in force and pressure transducers and accelerometers, consisting of a monocrystalline cubic-polar material with electrode faces that intersect one of the crystallographic principal axes X,Y,Z at an angle .alpha.'=arc sin .sqroot.p and the other principal axes at .beta.'=.+-.1/2 arc cos p, wherein p=0 for the piezoelectric orthoaxial shear effect, p=1/3 for the longitudinal piezoeffect and p=1 for the transverse piezoeffect.Type: GrantFiled: May 28, 1980Date of Patent: July 27, 1982Assignee: Kistler Instrumente AGInventor: Reto Calderara
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Patent number: 4245200Abstract: An elastic surface wave device includes a transducer having an elastic surface wave propagated in the direction of 75 to 133 degrees to a Y-axis on an X-cut lithium tantalate (LiTaO.sub.3) substrate.Type: GrantFiled: November 22, 1978Date of Patent: January 13, 1981Assignee: Tokyo Shibaura Electric Co., Ltd.Inventors: Sadao Takahashi, Hitoshi Hirano, Sadao Matsumura
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Patent number: 4232240Abstract: A series of lead potassium niobate substrates having X-cut crystallographic orientations defined by the Euler Angles Lambda=90.0.degree., Mu=90.0.degree. and Theta from -10.6.degree. to +10.6.degree..Type: GrantFiled: May 31, 1979Date of Patent: November 4, 1980Assignee: The United States of America as represented by the Secretary of the Air ForceInventor: Robert M. O'Connell
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Patent number: 4224549Abstract: A lead potassium niobate substrate having a singly rotated cut of the Z axis cylinder with a crystallographic orientation defined by the Euler Angles Lambda=74.4.degree., Mu=90.0.degree. and Theta=0.0.degree..Type: GrantFiled: May 31, 1979Date of Patent: September 23, 1980Assignee: The United States of America as represented by the Secretary of the Air ForceInventor: Robert M. O'Connell
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Patent number: 4224548Abstract: A lead potassium niobate substrate having a Y-axis boule crystallographic orientation defined by the Euler Angles Lambda=90.0.degree., Mu=66.6.degree. and Theta=0.0.degree..Type: GrantFiled: May 31, 1979Date of Patent: September 23, 1980Assignee: The United States of America as represented by the Secretary of the Air ForceInventor: Robert M. O'Connell
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Patent number: 4211947Abstract: A thickness-shear mode quartz oscillator characterized in that an addition mass fitted to a driving electrode of the oscillator for the purpose of adjusting its oscillation frequency has a non-circular shape or the fitting position thereof is deviated from the center of a quartz slice, or both in combination. Such addition mass provides different piezoelectric effects and effects of addition of the mass between the fundamental main vibration and harmonic vibrations and eliminates or restricts a "frequency abnormal phenomenon". Consequently, even when driven by a C-MOS type integrated circuit not having a frequency selection circuit in its oscillation loop, the thickness-shear mode quartz oscillator exhibits stable frequency-temperature characteristics.Type: GrantFiled: February 8, 1978Date of Patent: July 8, 1980Assignee: Kabushiki Kaisha SeikoshaInventors: Hitoshi Ikeno, Tetsuro Konno, Mitsuyuki Sugita, Hirobumi Yanagi
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Patent number: 4209725Abstract: The invention relates to piezoelectric devices employing a piezoelectric layer deposited on a substrate devoid of piezoelectric properties at ambient temperature. The device in accordance with the invention is provided with a piezoelectric layer made from a mono-atomic crystalline material, namely selenium. The invention is applicable to the excitation of surface elastic waves along non-piezoelectric substrates, to the excitation of bulk elastic waves and to the detection of infrared radiations.Type: GrantFiled: October 24, 1978Date of Patent: June 24, 1980Assignee: Thomson-CSFInventors: Eugene Dieulesaint, Daniel Royer, Richard Guedj
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Patent number: 4195244Abstract: A phase insensitive ultrasonic transducer which includes a CdS crystal that is annealed for a selected period of time and at a selected temperature to provide substantially maximum acoustic attenuation at the operating frequency of the transducer. Two electrodes are attached to the crystal with amplifier means and a signal processing system connected to one of the electrodes to provide an ultrasonic receiver.Type: GrantFiled: July 26, 1978Date of Patent: March 25, 1980Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventor: Joseph S. Heyman
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Patent number: RE35204Abstract: An acoustic wave device employing surfaces skimming bulk waves comprises a piezo electric substrate having a flat surface which carries an input transducer and an output transducer for respectively lanuching and receiving acoustic waves into and from the bulk of the substrate. The substrate may be of quartz, lithium tantalate, or lithium niobate and has the flat surface orientated so that a surface skimming bulk wave is launched without generation of surface acoustic waves.Type: GrantFiled: March 29, 1995Date of Patent: April 9, 1996Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern IrelandInventor: Meirion F. Lewis