Abstract: An LED or/and Laser light device(s) connect with outlet or bulb-base or interchangeable or USB power source, which incorporates more than one geometric shapes of optics-piece including image-forming-piece and optics-lens(es) that said optics-lens(es) having at least one of reflective and/or refractive properties which has relative positions, distances, and/or orientations to LEDs and/or Laser light-source(s) and image-forming-piece to let light-beams reflect, retro-reflect, refract, or go through art, design, texture, treated area of said optics-lens and/or image-forming-piece, so the light-beam of the said LED or laser light-source at least reflected or/and refracted and/or traveling and/or passing through multiple times the said reflective and refractive optic lens(es) and/or art-areas, and/or image-forming-device to create or project lighted image(s), message(s), number(s), time, geometric art(s), nature scene(s), galaxy(ies), milky way, sky(ies), cloud(s), space nebula, stars, moon, water-wave(s), aurora

Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto an electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

Abstract: A field emission transistor uses carbon nanotubes positioned to extend along a substrate plane rather than perpendicularly thereto. The carbon nanotubes may be pre-manufactured and applied to the substrate and then may be etched to create a gap between the carbon nanotubes and an anode through which electrons may flow by field emission. A planar gate may be positioned beneath the gap to provide a triode structure.

Abstract: The present disclosure is related to a film and a conductive film. The film of the present disclosure not only is optically transparent but also has excellent electrical conductivity and adhesion between the layers at the same time. Moreover, the conductive film of the present disclosure is optically transparent and has excellent electrical conductivity, adhesion between the layers and improved light extraction efficiency at the same time.

Abstract: Methods for forming carbon nanotube arrays are provided. Also provided are the arrays formed by the methods and electronic devices that incorporate the array as active layers. The arrays are formed by flowing a fluid suspension of carbon nanotubes through a confined channel under conditions that create a velocity gradient across the flowing suspension.

Abstract: A negative electroluminescent cooling device including a first layer of material; a second layer of material arranged at a non-zero distance from the first layer of material with help of a set of supporters, and an energy source to apply a reverse bias voltage to the first layer of material to cool the second layer of material. The material of the first layer is a semiconductor with a bandgap less or equal to a surface resonant energy of the second layer of material.

Abstract: A method for making a carbon nanotube field emitter is provided. A carbon nanotube array and a cathode substrate are provided. The carbon nanotube array is heated to form a graphitized carbon nanotube array. A conductive adhesive layer is formed on a surface of the cathode substrate. One end of the graphitized carbon nanotube array is contact with the conductive adhesive layer. The conductive adhesive layer is solidified to fix the graphitized carbon nanotube array on the cathode substrate.

Abstract: Provided is a field emission device. The field emission device includes a cathode electrode having a first surface and a second surface facing the first surface, the cathode electrode including grooves that are recessed from the first surface toward the second surface, the grooves extending in a first direction parallel to the first surface and emitter structures which are disposed within the grooves and each of which includes a core extending in the first direction and a conductive wire configured to surround the core. The grooves may be arranged in a second direction crossing the first direction, and the emitter structures may be disposed at vertical levels different from each other.

Abstract: A nanofiber sheet is described that is composed of a substrate and a layer of oriented nanofibers. Nanofibers of the sheet can be oriented in a common direction. In some orientations, light absorbent sheets can absorb over 99.9%, and in some cases over 99.95%, of the intensity of light incident upon the sheet. Methods for fabricating a light absorbent sheet are also described.

Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Abstract: A robust cold cathode uses an electron emitting construct design possibly for an x-ray emitter device. The electron beam emitted by the emitting construct is focused and accelerated by an electrical field towards an electron anode target. A shield is provided to prevent a cold cathode from being damaged by ion bombardment in high-voltage applications and a non-emitter zone may provide a robust ion bombardment zone. The system is further configured to provide an angled target anode or a stepped target anode to further reduce the ion bombardment damage.

Abstract: A horizontal vacuum channel transistor is provided. The horizontal transistor includes a substrate, horizontal emitter and collector electrodes formed in a layer of semiconductor material of the substrate, and a horizontal insulated gate located between the emitter and collector electrodes. The emitter electrode includes multiple horizontally-aligned emitter tips connected to a planar common portion, and the collector electrode includes a planar portion. The gate includes multiple horizontally-aligned gate apertures passing through the gate that each correspond to one of the emitter tips of the emitter electrode. The minimum distance between the emitter and collector electrodes is less than about 180 nm. Also provided are a vertical vacuum channel transistor having vertically-stacked emitter and collector electrodes, and methods for fabricating vacuum channel transistors.

Abstract: A method of producing an electron emitting device includes: step A of providing an aluminum substrate or providing an aluminum layer supported by a substrate; step B of anodizing a surface of the aluminum substrate or a surface of the aluminum layer to form a porous alumina layer having a plurality of pores; step C of applying Ag nanoparticles in the plurality of pores to allow the Ag nanoparticles to be supported in the plurality of pores; step D of, after step C, applying a dielectric layer-forming solution onto substantially the entire surface of the aluminum substrate or the aluminum layer, the dielectric layer-forming solution containing, in an amount of not less than 7 mass % but less than 20 mass %, a polymerization product having siloxane bonds; step E of, after step D, at least reducing a solvent contained in the dielectric layer-forming solution to form the dielectric layer; and step F of forming an electrode on the dielectric layer.

Abstract: Methods for additive formation of a STT-MRAM metal stack using a deposition process through a pre-patterned template that skims away metal ions that are less likely to enable anisotropic deposition on a substrate. The pre-patterned template is formed from a film stack using patterning techniques to form an opening in the film stack that exposes portions of an underlying substrate where a MTJ will be formed for an MRAM cell. The film stack cavity may be exposed to etch processes that selectively pull back the sidewall, such that other layers in the film stack protrude into the cavity. Additional treatments to the other layers may alter the opening sizes in the other layers. Metal deposited through the cavity such that metal ions with anisotropic characteristics will be skimmed away before reaching the substrate.

Abstract: Solid-state battery structures, particularly solid-state lithium-based battery structures, which are fast charging and have a high capacity are provided. Notably, fast charging, high capacity solid-state battery structures are provided that include a plurality of solid-state-thin-film batteries that are stacked one atop the other, or that include an array of interconnected solid-state thin-film batteries, or that contain a solid-state thin-film battery located on physically exposed surfaces of fin structures.

Abstract: Disclosed is a substrate for a display panel, a manufacturing method thereof, and a display panel and encapsulation method. The substrate includes a carrier substrate and at least one auxiliary encapsulation component disposed on the carrier substrate. A protrusion is formed at a side of the auxiliary encapsulation component away from the carrier substrate and protrudes in a direction parallel to the surface of the carrier substrate.

Abstract: A method is presented for controlling an electric field from a gate structure. The method includes forming a hardmask over a fin stack including a plurality of layers, forming a first dielectric layer over the hardmask, forming a sacrificial layer over the first dielectric layer, etching the sacrificial layer to expose a top surface of the first dielectric layer, depositing a second dielectric layer in direct contact with exposed surfaces of the first dielectric layer and the sacrificial layer, removing a layer of the plurality of layers of the fin stack to define an air gap within the fin stack, and forming triangle-shaped epitaxial growths within the air gap defined within the fin stack.

Abstract: A field emission transistor includes a gate, a fold over emitter, and fold over collector. The emitter and the collector are separated from the gate by a void and are separated from a gate contact by gate contact dielectric. The void may be a vacuum, ambient air, or a gas. Respective ends of the emitter and the collector are separated by a gap. Electrons are drawn across gap from the emitter to the collector by an electrostatic field created when a voltage is applied to the gate. The emitter and collector include a first conductive portion substantially parallel with gate and a second conductive portion substantially perpendicular with gate. The second conductive portion may be formed by bending a segment of the first conductive portion. The second conductive portion is folded inward from the first conductive portion towards the gate. Respective second conductive portions are generally aligned.

Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

Abstract: An X-ray source for ionizing of gases includes a field emission tip array within a vacuum region enclosed by a hood and a part of a support plate. The field emission tip array is arranged electrically insulated with respect to the carrier plate and wired as a cathode connected to a high-voltage source. A transmission window transparent to X-ray radiation is arranged in the hood centrally above the field emission tip array, and the hood is wired as an anode.

Abstract: A method for manufacturing of a device (300, 410-412) comprising a substrate (201) comprising a plurality of sets of nanostructures (207) arranged on the substrate, wherein each of the sets of nanostructures is individually electrically addressable, the method comprising the steps of: providing (101) the substrate (200) having a first (202) face, the substrate having an insulating layer (210) comprising an insulating material arranged on the first face (202) of the substrate forming an interface (203) between the insulating layer and the substrate; providing (102) a plurality of stacks (204) on the substrate, the stacks being spaced apart from each other, wherein each stack comprises a first conductive layer (205) comprising a first conductive material and a second conductive layer (206) comprising a second conductive material different from the first material, the second conductive layer being arranged on the first conductive layer for catalyzing nanostructure growth; heating (103) the substrate having the p

Abstract: The application describes a MEMS transducer comprising a substrate having a cavity. The transducer exhibits a membrane layer supported relative to the substrate to define a flexible membrane. An upper surface of the substrate comprises an overlap region between the edge of the cavity and a perimeter of the flexible membrane where the membrane overlies the upper surface of the substrate. At least one portion of the overlap region of the upper surface of the substrate is provided with a plurality of recesses. The recesses are defined so as to extend from the edge of the cavity towards the perimeter of the flexible membrane.

Abstract: Provided is an X-ray generator including a thermal electron emission type X-ray generator configured to generate a negative high voltage and a filament current, a field electron emission type X-ray generator including an anode electrode to be grounded, and configured to use the negative high voltage to bias the cathode electrode, and a field emission current control unit configured to convert the filament current to generate an output voltage to be provided to a gate electrode of the field electron emission type X-ray generator and convert the filament current to fix, to a specific level, a level of an emission current flowing through the cathode electrode.

Abstract: Methods for forming electrodes for use in nano-gap electrodes are provided. Such methods can be used to form electrodes for use in devices that can be used to sense or detect biomolecules, such as in biomolecule sequence applications.

Abstract: A field emission transistor includes a gate, a fold over emitter, and fold over collector. The emitter and the collector are separated from the gate by a void and are separated from a gate contact by gate contact dielectric. The void may be a vacuum, ambient air, or a gas. Respective ends of the emitter and the collector are separated by a gap. Electrons are drawn across gap from the emitter to the collector by an electrostatic field created when a voltage is applied to the gate. The emitter and collector include a first conductive portion substantially parallel with gate and a second conductive portion substantially perpendicular with gate. The second conductive portion may be formed by bending a segment of the first conductive portion. The second conductive portion is folded inward from the first conductive portion towards the gate. Respective second conductive portions are generally aligned.

Abstract: A method of detecting a condition in a subject comprises the steps of contacting cells of the subject with single-walled carbon nanotubes (SWCNTs), monitoring photoluminescence emitted by SWCNTs internalized into the cells and generating an SWCNT emission profile, comparing the SWCNT emission profile to a control emission profile for the SWCNTs to produce a result, and determining a likelihood of having the condition in the subject based on the result from the comparing step. Also disclosed is a method for screening agents capable of changing endocytic environment using SWCNTs.

Abstract: An electronic component is mounted on the mounting face of a printed wiring board and a plurality of terminals arranged on the mounting face of the printed wiring board are respectively bonded to a plurality of terminals arranged on the bottom surface of the electronic component by means of solder. Solder paste containing powdery solder and thermosetting resin is provided to the plurality of terminals on the mounting face, then the electronic component is mounted on the mounting face of the printed wiring board, and subsequently the solder paste is heated to bond the corresponding terminals by means of molten solder. Thereafter, the molten solder is allowed to solidify and the thermosetting resin separated from the solder paste is allowed to cure in a state where it is held in contact with metal members arranged separately relative to the terminals.

Abstract: A method of making carbon nanotube composite layer includes following steps. A first suspension having a number of semiconductor particles is formed. The number of semiconductor particles are deposited on a substrate. A second suspension comprising a number of carbon nanotubes is provided. The number of carbon nanotubes in the second suspension are deposited on the substrate with the number of semiconductor particles.

Abstract: A method is presented for controlling an electric field from a gate structure. The method includes forming a hardmask over a fin stack including a plurality of layers, forming a first dielectric layer over the hardmask, forming a sacrificial layer over the first dielectric layer, etching the sacrificial layer to expose a top surface of the first dielectric layer, depositing a second dielectric layer in direct contact with exposed surfaces of the first dielectric layer and the sacrificial layer, removing a layer of the plurality of layers of the fin stack to define an air gap within the fin stack, and forming triangle-shaped epitaxial growths within the air gap defined within the fin stack.

Abstract: The electronic device comprises a substrate (1), at least one semiconductor wire element (2) formed by a nitride of a group III material and an electroconductive layer (3) interposed between the substrate (1) and said at least one semiconductor wire element (2). Said at least one semiconductor wire element (2) extends from said electroconductive layer (3), and the electroconductive layer (3) comprises a carbide of zirconium or a carbide of hafnium.

Abstract: A light converter for a light source is disclosed, having a substrate and a light converting layer disposed thereon for receiving laser radiation and converting the same into visible light. A sensor is functionally integrated with the light converting layer for purposes of detecting the condition of the light converting layer and modifying an operation of the laser radiation source in response thereto.

Abstract: The inventive concepts relate to a method of manufacturing a hybrid metal pattern and a hybrid metal pattern manufactured thereby. In the method, the hybrid metal pattern may be manufactured on a substrate (e.g., a flexible substrate), formed of various materials, at room temperature without damaging the substrate, by a wire explosion method in liquid and light-sintering. In more detail, when performing the wire explosion method in liquid according to conditions of the inventive concepts, metal particles having uniform nano-sizes and uniform micro-sizes can be formed by a simple process, and additional dispersing and collecting processes can be omitted. In addition, conductive hybrid ink is formed by adding a metal precursor and then is light-sintered. In this case, the hybrid metal pattern can be manufactured by a very simple process.

Abstract: Methods of semiconductor arrangement formation are provided. A method of forming the semiconductor arrangement includes forming a first nucleus on a substrate in a trench or between dielectric pillars on the substrate. Forming the first nucleus includes applying a first source material beam at a first angle relative to a top surface of the substrate and concurrently applying a second source material beam at a second angle relative to the top surface of the substrate. A first semiconductor column is formed from the first nucleus by rotating the substrate while applying the first source material beam and the second source material beam. Forming the first semiconductor column in the trench or between the dielectric pillars using the first source material beam and the second source material beam restricts the formation of the first semiconductor column to a single direction.

Abstract: The disclosure relates to an image capture device comprising an electron receiving construct and an electron emitting construct, and further comprising an inner gap providing an unobstructed space between the electron emitting construct and the electron receiving construct. The disclosure further relates to an x-ray emitting device comprising an x-ray emitting construct and an electron emitting construct, said x-ray emitting construct comprising an anode, the anode being an x-ray target, wherein the x-ray emitting device may comprise an inner gap providing an unobstructed space between the electron emitting construct and the x-ray emitting construct. The disclosure further relates to an x-ray imaging system comprising an image capture device and an x-ray emitting device.

Abstract: A display unit with a touch detection function includes: a plurality of touch detection electrodes arranged side by side to extend in a direction, each of the touch detection electrodes being formed in a predetermined electrode pattern including electrode portion and opening portion and outputting a detection signal, based on a variation in capacitance due to an external proximity object; and a plurality of display elements formed in a layer different from a layer of the touch detection electrodes, a predetermined number of the display elements being arranged within a width dimension of a region corresponding to each of the touch detection electrodes. The predetermined electrode pattern corresponds to a layout pattern of the display elements.

Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

Abstract: Disclosed herein are methods for additive formation of a STT-MRAM metal stack using a deposition process through a pre-patterned template that skims away metal ions that are less likely to enable anisotropic deposition on a substrate. The pre-patterned template is formed from a film stack using patterning techniques to form an opening in the film stack that exposes portions of an underlying substrate where a MTJ will be formed for an MRAM cell. The film stack cavity may be exposed to etch processes that selectively pull back the sidewall, such that other layers in the film stack protrude into the cavity. Additional treatments to the other layers may alter the opening sizes in the other layers. Metal deposited through the cavity such that metal ions with anisotropic characteristics will be skimmed away before reaching the substrate.

Abstract: Apparatus and methods of use thereof for the production of carbon-based and other nanostructures, as well as fuels and reformed products, are provided.

Abstract: A method of manufacturing a composite material may include providing one or more layers of reinforcement material penetrated with viscous matrix material that is doped with electrically conductive particles. The method may further include applying a magnetic field to arrange the particles into one or more electrically conductive pathways, and curing the matrix material to secure the pathways in position relative to the reinforcement material.

Abstract: Vacuum transistors with carbon nanotube as the collector and/or emitter electrodes are provided. In one aspect, a method for forming a vacuum transistor includes the steps of: covering a substrate with an insulating layer; forming a back gate(s) in the insulating layer; depositing a gate dielectric over the back gate; forming a carbon nanotube layer on the gate dielectric; patterning the carbon nanotube layer to provide first/second portions thereof over first/second sides of the back gate, separated from one another by a gap G, which serve as emitter and collector electrodes; forming a vacuum channel in the gate dielectric; and forming metal contacts to the emitter and collector electrodes. Vacuum transistors are also provided.

Abstract: The present invention relates to a field emission lighting arrangement, comprising an anode and a cathode, where the shape of the cathode is selected based on the shape of a evacuated envelope in which the anode and cathode is provided. The inventive shape of cathode allows for an improved uniformity of an electric field provided between the anode and cathode during operation of the field emission lighting arrangement. The invention also relates to a corresponding method for selecting a shape of such a cathode.

Abstract: Some embodiments of vacuum electronics call for a grid that is fabricated in close proximity to an electrode, where, for example, the grid and electrode are separated by nanometers or microns. Methods and apparatus for fabricating a nanoscale vacuum grid and electrode structure are described herein.

Abstract: Provided herein is a display device including a display unit for displaying an image, the display unit including light emitting regions; a touch sensor arranged on a rear surface of the display unit; and a coil unit arranged on a front surface of the display unit, and including a plurality of auxiliary coils.

Abstract: A field emission transistor includes a gate, a fold over emitter, and fold over collector. The emitter and the collector are separated from the gate by a void and are separated from a gate contact by gate contact dielectric. The void may be a vacuum, ambient air, or a gas. Respective ends of the emitter and the collector are separated by a gap. Electrons are drawn across gap from the emitter to the collector by an electrostatic field created when a voltage is applied to the gate. The emitter and collector include a first conductive portion substantially parallel with gate and a second conductive portion substantially perpendicular with gate. The second conductive portion may be formed by bending a segment of the first conductive portion. The second conductive portion is folded inward from the first conductive portion towards the gate. Respective second conductive portions are generally aligned.

Abstract: A metal jet x-ray tube is proposed, that is affected less than conventional tubes by the problem of the power density at the point of incidence of the electron beam on the anode component. To this end, the metal jet x-ray tube provides a metal jet as an anode component that is so thin that this metal jet only partly decelerates an electron beam incident thereon. Moreover, the metal jet of the anode component is at least embedded or dissolved in a single second material that passes electrons relatively well and is heat absorbing.

Abstract: Embodiments disclosed herein include systems and methods for demonstrating the functionality of eyewear using digital images on an electronic display. The functionality of certain types of eyewear, such as, for example, sunglasses, may not be readily perceivable when the wearer is indoors. In some embodiments, a demonstration image is shown on an electronic display. In certain embodiments, the demonstration image can have a background portion, a wanted color portion, and unwanted color portion, and/or other portions that cooperate with an optical filter of the eyewear to simulate and/or emphasize the functionality of the eyewear when viewing real-world scenes.

Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

Abstract: A Tera Hertz reflex klystron includes an electron emission unit, a resonant unit and an output unit. The electron emission is used to emit a plurality of electrons. The electron emission unit defines a first opening. The resonant unit comprises a resonant cavity frame. The resonant cavity frame comprises a top wall and a bottom wall and defines a resonant cavity. The top wall and the bottom wall faces with each other. The bottom wall comprises a bottom opening. The top wall comprises a top opening and at least one outputting hole. The bottom opening and the first opening are merged with each other. The output unit being configured to output Tera Hertz waves. The plurality of electrons are transferred to the output unit from the at least one outputting hole.

Abstract: The disclosure relates generally to a display panel, which in at least some situations includes multiple separate stacked layers or components that are combined together, such as to have one emission layer component with numerous pixels that emit light, and to have at least one control logic layer component that includes integrated circuits or other logic to control the emission of light by the pixels in the emission layer. The different layers may be separate silicon chips or wafers that are connected in a stacked structure via a flip chip technique, with the emission layer using AMOLED or other OLED pixels. The display panels may be designed and/or configured for use in head mounted displays (e.g., with a fully immersive virtual reality system). The disclosure also relates generally to techniques for manufacturing, testing and/or otherwise using such a display panel in various manners.

Abstract: A method and structure for an electrical device and a plurality of electrical circuits including a plurality of carbon nanotubes (CNTs). The method can include forming a first CNT catalyst layer including a plurality of first CNT catalyst plugs, a plurality of electrical circuits electrically coupled to the first CNT catalyst layer, and a second CNT catalyst layer including a plurality of second CNT catalyst plugs electrically coupled to the second CNT catalyst layer. CNTs may be simultaneously formed on the plurality of first and second CNT catalyst plugs within a chemical vapor deposition (CVD) furnace.