Abstract: The present invention relates to a field emission lighting arrangement, comprising an anode and a cathode, where the shape of the cathode is selected based on the shape of a evacuated envelope in which the anode and cathode is provided. The inventive shape of cathode allows for an improved uniformity of an electric field provided between the anode and cathode during operation of the field emission lighting arrangement. The invention also relates to a corresponding method for selecting a shape of such a cathode.

Abstract: Some embodiments of vacuum electronics call for a grid that is fabricated in close proximity to an electrode, where, for example, the grid and electrode are separated by nanometers or microns. Methods and apparatus for fabricating a nanoscale vacuum grid and electrode structure are described herein.

Abstract: Provided herein is a display device including a display unit for displaying an image, the display unit including light emitting regions; a touch sensor arranged on a rear surface of the display unit; and a coil unit arranged on a front surface of the display unit, and including a plurality of auxiliary coils.

Abstract: A field emission transistor includes a gate, a fold over emitter, and fold over collector. The emitter and the collector are separated from the gate by a void and are separated from a gate contact by gate contact dielectric. The void may be a vacuum, ambient air, or a gas. Respective ends of the emitter and the collector are separated by a gap. Electrons are drawn across gap from the emitter to the collector by an electrostatic field created when a voltage is applied to the gate. The emitter and collector include a first conductive portion substantially parallel with gate and a second conductive portion substantially perpendicular with gate. The second conductive portion may be formed by bending a segment of the first conductive portion. The second conductive portion is folded inward from the first conductive portion towards the gate. Respective second conductive portions are generally aligned.

Abstract: A metal jet x-ray tube is proposed, that is affected less than conventional tubes by the problem of the power density at the point of incidence of the electron beam on the anode component. To this end, the metal jet x-ray tube provides a metal jet as an anode component that is so thin that this metal jet only partly decelerates an electron beam incident thereon. Moreover, the metal jet of the anode component is at least embedded or dissolved in a single second material that passes electrons relatively well and is heat absorbing.

Abstract: Embodiments disclosed herein include systems and methods for demonstrating the functionality of eyewear using digital images on an electronic display. The functionality of certain types of eyewear, such as, for example, sunglasses, may not be readily perceivable when the wearer is indoors. In some embodiments, a demonstration image is shown on an electronic display. In certain embodiments, the demonstration image can have a background portion, a wanted color portion, and unwanted color portion, and/or other portions that cooperate with an optical filter of the eyewear to simulate and/or emphasize the functionality of the eyewear when viewing real-world scenes.

Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

Abstract: A Tera Hertz reflex klystron includes an electron emission unit, a resonant unit and an output unit. The electron emission is used to emit a plurality of electrons. The electron emission unit defines a first opening. The resonant unit comprises a resonant cavity frame. The resonant cavity frame comprises a top wall and a bottom wall and defines a resonant cavity. The top wall and the bottom wall faces with each other. The bottom wall comprises a bottom opening. The top wall comprises a top opening and at least one outputting hole. The bottom opening and the first opening are merged with each other. The output unit being configured to output Tera Hertz waves. The plurality of electrons are transferred to the output unit from the at least one outputting hole.

Abstract: The disclosure relates generally to a display panel, which in at least some situations includes multiple separate stacked layers or components that are combined together, such as to have one emission layer component with numerous pixels that emit light, and to have at least one control logic layer component that includes integrated circuits or other logic to control the emission of light by the pixels in the emission layer. The different layers may be separate silicon chips or wafers that are connected in a stacked structure via a flip chip technique, with the emission layer using AMOLED or other OLED pixels. The display panels may be designed and/or configured for use in head mounted displays (e.g., with a fully immersive virtual reality system). The disclosure also relates generally to techniques for manufacturing, testing and/or otherwise using such a display panel in various manners.

Abstract: A method and structure for an electrical device and a plurality of electrical circuits including a plurality of carbon nanotubes (CNTs). The method can include forming a first CNT catalyst layer including a plurality of first CNT catalyst plugs, a plurality of electrical circuits electrically coupled to the first CNT catalyst layer, and a second CNT catalyst layer including a plurality of second CNT catalyst plugs electrically coupled to the second CNT catalyst layer. CNTs may be simultaneously formed on the plurality of first and second CNT catalyst plugs within a chemical vapor deposition (CVD) furnace.

Abstract: Disclosed is a transparent electrode including a transparent substrate 100, conductive nanowires 10 forming networks, nanoparticles bonding the nanowires 10, and a conductive layer embedded in the transparent substrate 100.

Abstract: A radiation generator may include an elongate generator housing having a proximal end and a distal end, a target electrode within the housing at the distal end thereof, a charged particle source within the housing at the proximal end thereof to direct charged particles at the target based upon a first biasing potential, and a field shaping electrode within the housing and adjacent the source to shape a field within the housing. At least one accelerator electrode may be within the housing on an opposite side of the field shaping electrode from the source to accelerate charged particles from the source to the target based upon a second biasing potential different than the first biasing potential. The field shaping electrode may be electrically floating so that the charged particles are directed from the source to the target without applying a biasing potential to the field shaping electrode.

Abstract: A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

Abstract: A sensor with a substrate includes nanowires extending vertically from the substrate, a hafnia coating on the nanowires that provides hafnia coated nanowires, and a noble metal coating on the hafnia coated nanowires. The top of the hafnia and noble metal coated nanowires bent onto one another to create a canopy forest structure. There are numerous randomly arranged holes that let through scattered light. The many points of contact, hot spots, amplify signals. The methods include the steps of providing a Raman spectroscopy substrate, introducing nano crystals to the Raman spectroscopy substrate, growing a forest of nanowires from the nano crystals on the Raman spectroscopy substrate, coating the nanowires with hafnia providing hafnia coated nanowires, and coating the hafnia coated nanowires with a noble metal or other metal.

Abstract: The present invention relates to a method for producing graphene on a face-centered cubic metal catalyst having a plane oriented in one direction, and more particularly to a method of producing graphene on a metal catalyst having the (100) or (111) crystal structure and a method of producing graphene using a catalyst metal foil having a single orientation, obtained by electroplating a metal catalyst by a pulse wave current and annealing the metal catalyst. The invention also relates to a method of producing graphene using a metal catalyst, and more particularly to a method of producing graphene, comprising the steps of: alloying a metal catalyst with an alloying element; forming step structures on the metal catalyst substrate in an atmosphere of a gas having a molecular weight of carbon; and supplying hydrocarbon and hydrogen gases to the substrate. On unidirectionally oriented metal catalyst prepared according to the present invention, graphene can be grown uniformly and epitaxially.

Abstract: Methods of semiconductor arrangement formation are provided. A method of forming the semiconductor arrangement includes forming a first nucleus on a substrate in a trench or between dielectric pillars on the substrate. Forming the first nucleus includes applying a first source material beam at a first angle relative to a top surface of the substrate and concurrently applying a second source material beam at a second angle relative to the top surface of the substrate. A first semiconductor column is formed from the first nucleus by rotating the substrate while applying the first source material beam and the second source material beam. Forming the first semiconductor column in the trench or between the dielectric pillars using the first source material beam and the second source material beam restricts the formation of the first semiconductor column to a single direction.

Abstract: A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60° with respect to a perpendicular to the surface of device.

Abstract: The present invention relates to method for making a membrane electrode assembly. First, a carbon nanotube film is fabricated to act as a gas diffusion layer. Second, a catalyst layer is formed on the carbon nanotube film to obtain an electrode. Third, a proton exchange membrane is provided, and two electrodes are separately disposed on two opposite surfaces of the proton exchange membrane, thereby forming the membrane electrode assembly.

Abstract: Disclosed are various embodiments of methods and systems related to stimulus responsive nanoparticles. In one embodiment includes a stimulus responsive nanoparticle system, the system includes a first electrode, a second electrode, and a plurality of elongated electro-responsive nanoparticles dispersed between the first and second electrodes, the plurality of electro-responsive nanorods configured to respond to an electric field established between the first and second electrodes.

Abstract: A device includes an anode, a cathode, and a grid configured to modulate a flow of electrons from the cathode to anode. The grid is made of graphene material which is substantially transparent to the flow of electrons.

Abstract: A traveling wave tube system includes a traveling wave tube, and a power supply device for supplying required power supply voltages to the respective electrodes of the traveling wave tube. The power supply device includes a control voltage generation circuit for generating a control voltage which is a negative DC voltage on the basis of a ground potential and supplying the control voltage to the anode, an anode voltage generation circuit for generating an anode voltage which is a negative DC voltage on the basis of the potential of the anode and supplying the anode voltage to the cathode, and a collector voltage generation circuit for generating a collector voltage which is a positive DC voltage on the basis of the potential of the cathode and supplying the collector voltage to the collector.

Abstract: A display panel is disclosed, which comprises: a first substrate; a first metal line disposed on the first substrate and having a first surface and a first side connecting to the first surface, wherein the first side has a concave shape; and a sealant unit covering the first surface and the first side.

Abstract: The invention pertains to a method for manufacturing crystalline carbon nanostructures and/or a network of crystalline carbon nanostructures, comprising: (i) providing a bicontinuous micro-emulsion containing metal nanoparticles having an average particle size between 1 and 100 nm; (ii) bringing said bicontinuous micro-emulsion into contact with a substrate; and (iii) subjecting said metal nanoparticles and a gaseous carbon source to chemical vapor deposition, thus forming carbon nanostructures and/or a network of carbon nanostructures. Therewith, it is now possible to obtain crystalline carbon nanostructures networks, preferably carbon nanotubes networks.

Abstract: A computer-implemented method includes detecting, at a wearable computing device, a first direction of a first stare, wherein the wearable computing device includes a head-mountable display unit, identifying a target based on the detected first direction, and based on a determination that a first time duration of the first stare is greater than or equal to a first predetermined time threshold, identifying information relevant to the target and displaying the identified information on the display unit. Subsequent to displaying the identified information, the method includes detecting a second stare that is directed at the target or at the displayed information, and based on a determination that a second time duration of the second stare is greater than or equal to a second predetermined time threshold, identifying additional information relevant to the target, and displaying the additional information on the display unit.

Abstract: An object of the present invention is to provide a light emitting device in which variations in an emission spectrum depending on a viewing angle with respect to a side from which luminescence is extracted are decreased. A light emitting device according to the invention has a transistor, an insulating layer covering the transistor and a light emitting element provided in an opening of the insulating layer. The transistor and the light emitting element are electronically connected through a connecting portion. Additionally, the connecting portion is connected to the transistor through a contact hole penetrating the insulating layer. Note that the insulating layer may be a single layer or a multilayer in which a plurality of layers including different substances is laminated.

Abstract: Provided are a drive device and drive method for a vacuum fluorescent display that can suppress brightness variations in display images and improve display quality. A drive device for a vacuum fluorescent display is provided with a positive electrode unit in which a plurality of positive electrodes to which a phosphor is applied are disposed in a matrix shape and a negative electrode filament that discharges electrons toward the positive electrode unit. The device is provided with: a first magnetic field generating means that generates a first magnetic field perpendicular to the direction in which the positive electrode unit and the negative electrode filament face each other and that can periodically switch polarity; and a second magnetic field generating means that generates a second magnetic field that is perpendicular to the direction in which the positive electrode unit and the negative electrode filament face each other and crosses the first magnetic field and that can periodically switch polarity.

Abstract: An electro-optic device includes a substructure, a layer of nanowires deposited on the substructure so as to form a network of nanowires having electrically connected junctions at overlapping nanowire portions and defining spaces void of the nanowires, and a plurality of electrically conducting and optically transparent nanoparticles disposed to at least partially fill a plurality of the spaces to provide additional electrically conducting pathways for the network of nanowires across the spaces. The network of nanowires and the plurality of electrically conducting and optically transparent nanoparticles form at least a portion of an optically transparent electrode of the electro-optic device.

Abstract: An electron source includes a plurality of electron emission cathodes and at least one control electrode. A gate current regulator is provided for regulation of current flowing through the at least one control electrode.

Abstract: In systems where insulating deposits form during normal operation, electrodes are configured so the deposits have the effect of creating in-situ triple junctions. These triple junctions enhance low level discharge activity to facilitate localized breakdown of the deposits and maintain electrode conductivity.

Abstract: The disclosure relates to a field emission cathode. The field emission cathode includes a microchannel plate, a cathode electrode and a number of cathode emitters. The microchannel plate is an insulative plate and includes a first surface and a second surface opposite to the first surface. The microchannel plate defines a number of holes extending through the microchannel plate from the first surface to the second surface. The cathode electrode is located on the first surface. The number of cathode emitters are filled in the number of holes and electrically connected with the cathode electrode.

Abstract: A driving method includes providing a field emission cathode device. The field emission cathode device includes a cathode electrode, an electron emission layer electrically connected to the cathode electrode, a first gate electrode spaced from the cathode electrode by a first dielectric layer, and a second grid electrode spaced from the first gate electrode by a second dielectric layer. The second dielectric layer has a second opening. A first voltage is supplied to the cathode electrode, a second voltage is supplied to the first gate electrode, and a third voltage is supplied to the second grid electrode, to extract electrons from the electron emission layer to a space formed by the second opening, until the electrons of the space saturate. The third voltage is greater than the second voltage, such that the electrons of the space are emitted through the second grid electrode.

Abstract: The invention provides nanostructure composite porous silicon and carbon materials, and also provides carbon nanofiber arrays having a photonic response in the form of films or particles. Composite materials or carbon nanofiber arrays of the invention are produced by a templating method of the invention, and the resultant nanomaterials have a predetermined photonic response determined by the pattern in the porous silicon template, which is determined by etching conditions for forming the porous silicon. Example nanostructures include rugate filters, single layer structures and double layer structures. In a preferred method of the invention, a carbon precursor is introduced into the pores of a porous silicon film. Carbon is then formed from the carbon precursor.

Abstract: Provided herein are carbon nanotubes conformally coated with diamond nanocrystals or silicon carbide, or both, methods of their preparation, methods of their use and compositions and materials comprising the conformally coated carbon nanotubes.

Abstract: A field emission transistor includes a gate, a fold over emitter, and fold over collector. The emitter and the collector are separated from the gate by a void and are separated from a gate contact by gate contact dielectric. The void may be a vacuum, ambient air, or a gas. Respective ends of the emitter and the collector are separated by a gap. Electrons are drawn across gap from the emitter to the collector by an electrostatic field created when a voltage is applied to the gate. The emitter and collector include a first conductive portion substantially parallel with gate and a second conductive portion substantially perpendicular with gate. The second conductive portion may be formed by bending a segment of the first conductive portion. The second conductive portion is folded inward from the first conductive portion towards the gate. Respective second conductive portions are generally aligned.

Abstract: An integrated field emission array for ion desorption includes an electrically conductive substrate; a dielectric layer lying over the electrically conductive substrate comprising a plurality of laterally separated cavities extending through the dielectric layer; a like plurality of conically-shaped emitter tips on posts, each emitter tip/post disposed concentrically within a laterally separated cavity and electrically contacting the substrate; and a gate electrode structure lying over the dielectric layer, including a like plurality of circular gate apertures, each gate aperture disposed concentrically above an emitter tip/post to provide a like plurality of annular gate electrodes and wherein the lower edge of each annular gate electrode proximate the like emitter tip/post is rounded. Also disclosed herein are methods for fabricating an integrated field emission array.

Abstract: Provided herein are the polymers shown below. The value n is a positive integer. R1 is an organic group, and each R2 is H or a chemisorbed group, with at least one R2 being a chemisorbed group. The polymer may be a nanostructured film. Also provided herein is a method of: converting a di-p-xylylene paracyclophane dimer to a reactive vapor of monomers; depositing the reactive vapor onto a substrate held at an angle relative to the vapor flux to form nanostructured poly(p-xylylene) film; reacting the film with an agent to form hydrogen atoms that are reactive with a precursor of a chemisorbed group, if the film does not contain the hydrogen atoms; and reacting the hydrogen atoms with the precursor. Also provided herein is a device having a nanostructured poly(p-xylylene) film on a pivotable substrate. The film has directional hydrophobic or oleophobic properties and directional adhesive properties.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.

Abstract: A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.

Abstract: A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film.

Abstract: A solid-state image sensor includes a semiconductor layer, a multilayer wiring layer, an opening which extends through the semiconductor layer, and reaches an electrically conductive layer in the multilayer wiring layer, an electrically conductive member arranged in the opening so as to be connected to the electrically conductive layer, and a trench which surrounds the opening, and extends through the semiconductor layer, the trench having a space with no solid substance, and the semiconductor layer including a wall portion arranged between a side face defining the opening, and an inner-side face defining the trench to surround the electrically conductive member.

Abstract: The present invention relates to an interconnection structure and a method for fabricating the same. According to the present invention, cavities are formed between the interconnection dielectric by using a sacrificial layer, carbon nanotubes are used as the interconnection material for local interconnection between via holes, graphene nanoribbons are used as the interconnection material for metal lines, and cavities are included in the interconnection dielectric. In addition, the conventional CMOS BEOL Cu interconnection technique is applied to the intermediate interconnection level and the global interconnection level. In this way, the high parasitic resistance and parasitic capacitance in the Cu interconnection technique, which may occur when the local interconnection is relatively small in size, can be effectively overcome.

Abstract: According to embodiments of the present invention, there are provided an organic semiconductor array substrate, a method for manufacturing the same and a display device. The organic thin film transistor array substrate comprises a pixel structure formed on a transparent substrate; the pixel structure includes: a gate line, a data line, an organic thin film transistor, a pixel electrode, a common electrode line and a common electrode; the organic thin film transistor includes a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode and a drain electrode; above the data line, the source electrode, the drain electrode and the pixel electrode, there are disposed in order a first bank insulating layer and a second bank insulating layer from bottom to top; and at openings and through holes of the first bank insulating layer and the second bank insulating layer, the pixel structure is formed by printing.

Abstract: An electric field emitting source is equipped with an electron emitting film which comprises a nano-sized electron emitting substance and has a first surface and a second surface constituting the surface opposite thereto, and a cathode which secures one end of the electron emitting film and comprises a first block and a second block respectively corresponding to the first surface and the second surface of the electron emitting film.

Abstract: The disclosure relates to a field emission cathode. The field emission cathode includes a microchannel plate, a cathode electrode and a number of cathode emitters. The microchannel plate is an insulative plate and includes a first surface and a second surface opposite to the first surface. The microchannel plate defines a number of holes extending through the microchannel plate from the first surface to the second surface. The cathode electrode is located on the first surface. The number of cathode emitters are filled in the number of holes and electrically connected with the cathode electrode.

Abstract: The invention discloses a method of manufacturing a microneedle including the steps of forming an island etching mask having thickness distribution on a substrate, and processing the substrate into a needle by taking advantage of a difference in etching rates between the etching mask and the substrate. The invention enables to readily control a point angle and height of the manufactured needle.

Abstract: There is provided a sample analysis element capable of uniting a propagating surface plasmon resonance with a localized surface plasmon resonance while increasing the surface density of the hot spots. The sample analysis element is provided with a plurality of metal nanobody lines. Each of the metal nanobody lines includes a plurality of metal nanobodies arranged in a line on a dielectric surface at a first pitch smaller than a wavelength of incident light, and the plurality of metal nanobody lines is arranged in parallel to each other at a second pitch larger than the first pitch.

Abstract: A sample analysis device capable of realizing the enhancement of a near-field light while increasing a hotspot areal density is provided. In a sample analysis device, multiple nanostructures are arranged on the surface of a base body. A dielectric body is covered with a metal film in each nanostructure. The nanostructures form multiple nanostructure lines. In each nanostructure line, the nanostructures are arranged at a first pitch SP which is smaller than the wavelength of an excitation light and the nanostructure lines are arranged in parallel with one another at a second pitch LP which is greater than the first pitch SP.

Abstract: An apparatus, system and method of using electrons to perform at least one operation are disclosed. An apparatus may include groups of carbon nanotubes capable of emitting a relatively large number of electrons for use in performing operations such as sterilization, purification, deodorization, cleaning, cross-linking, pest control, pathogen control, chain-scissioning associated with surface modification, waste treatment, etc. Each group of carbon nanotubes may be aligned with a respective opening in a member, where the member may be coupled with a membrane capable of transmitting electrons. Electrons may be emitted from the carbon nanotubes by applying a vacuum to the carbon nanotubes and also applying an electric potential between the carbon nanotubes and the member. As such, electrons from a plurality of groups of carbon nanotubes may generate an electron flow that can be used to perform one or more operations on a fluid, object, or other type of component.

Abstract: Three dimensional high surface electrodes are described. The electrodes are fabricated by methods including the steps: designing the pillars; selecting a material for the formation of the pillars; patterning the material; transferring the pattern to form the pillars; insulating the pillars and providing a metal layer for increased conductivity. Alternative methods for fabrication of the electrodes and fabrication of the electrodes using CMOS are also described.