Abstract: A method of producing an electron source, a carbon nanotube (CNT) electron source, and a method of field emission using an electron source are disclosed. Embodiments provide convenient and effective mechanisms for improving thermal and mechanical performance of CNT electron sources, in one example, by heating a polymer-based matrix (e.g., PDMS) beyond its curing point until the polymer decomposes to form a cross linked and rigid matrix comprising silicon dioxide (SiO2). Additionally, embodiments provide convenient, effective and cost-efficient mechanisms for producing large-scale electron sources with controlled and nearly uniform CNT densities by spin coating a CNT/PDMS solution onto a substrate comprising an electrode, where an electric field is used to align the CNTs while the matrix is heated to convert the PDMS-based matrix to an SiO2-based matrix to secure the CNTs with respect to one another and with respect to the substrate.

Abstract: An exemplary electron emission device includes an electron emitter, an anode opposite to and spaced apart from the electron emitter, a first power supply circuit, and a second power supply circuit. The first power supply circuit is configured for electrically connecting the electron emitter and the anode with a power supply to generate an electric field between the electron emitter and the anode. The second power supply circuit is configured for electrically connecting the electron emitter with a power supply to supply a heating current for heating the electron emitter whereby electrons emit therefrom. Methods for generating an emission current with a relatively higher stability also are provided.

Abstract: A thermal field emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source is disclosed. Embodiments disclose changing coating shape, coating position and shorten emitter length to extend the lifetime of the field emission cathode.

Abstract: A field emission device (10) includes a sealed container (11) with a light-permeable portion (12). A phosphor layer (13) is formed on the light-permeable portion. A light-permeable anode (14) is formed on the light-permeable portion. At least one cathode is positioned opposite to the light-permeable anode. A shielding barrel (16) is electrically connected to the at least one cathode and disposed in the container. The shielding barrel has opposite open ends respectively facing towards the light-permeable anode and the cathode (18, 19). The shielding barrel has an inner surface, and a slurry layer (17) containing conductive nano material is formed on the inner surface of the shielding barrel.

Abstract: An electron emission device includes a base substrate and first electrodes formed on the base substrate in one direction. Second electrodes are formed on the base substrate in the one direction and spaced apart from the first electrodes by a predetermined interval and parallel to each other. First electron emission layers are formed on the first electrodes. Second electron emission layers are formed on the second electrodes. The interval between adjacent first and second electrodes is substantially equal to an interval between adjacent first and second electron emission layers.

Abstract: A planar field emission illumination module includes a top substrate, a bottom substrate, and a plurality of electron-amplification sets located between the top substrate and the bottom substrate. Each electron-amplification set has multiple electron-amplification plates spaced at gaps, which are formed of a metal and coated with an electron-amplification material on the surfaces. The cross section of each electron amplification plate can be V-shaped, U-shaped, semi-circular, arc-shaped, trapezoid, irregular, and the combination thereof. The planar field emission illumination module can focus the electrons and regulate the distribution of the electrons effectively. Hence, the planar field emission illumination module can provide a flat light source with illumination uniformity and high brightness.

Abstract: An electron emission device is disclosed. The electron emission device includes a cathode electrode including a main electrode having an opening, ii) a plurality of isolated electrodes on each of which each of plurality of electron emission units is located, and iii) at least one resistance layer electrically connecting the main electrode and the plurality of isolated electrodes. The plurality of isolated electrodes are located within the opening and form gaps with the main electrode. A resistance between the main electrode and one of the plurality of isolated electrodes is different from that between the main electrode and the other isolated electrodes.

Abstract: An image display apparatus of smaller beam deviation is provided by making smaller the absolute value of an angle formed by an initial velocity vector of an electron emitted from the first electron-emitting devices closest to a spacer 100 and a line parallel to the longitudinal direction of a spacer 100, rather than the absolute value of an angle formed by an initial velocity vector of an electron emitted from the second electron-emitting devices secondary closer to the spacer 100 and the line parallel to the longitudinal direction of the spacer 100.

Abstract: A cathode has a cathode body with a surface emitter composed of an electrically conductive ceramic material. The cathode has a high electron emission and a long lifespan.

Abstract: An electron-emitting device has a pair of device electrodes formed on a substrate and an electroconductive film connected to the device electrodes. The electroconductive film has a first gap between the device electrodes and has a carbon film having a second gap at least in the first gap. The substrate is formed by stacking a nitrogen-contained activation suppressing layer and an activation accelerating layer having a nitrogen containing ratio smaller than that of the activation suppressing layer onto a base and has nitrogen containing ratio distribution in the activation suppressing layer in a film thickness direction. The nitrogen containing ratio of the activation suppressing layer at the activation accelerating layer side is smaller than that at the base side.

Abstract: Described herein are methods of manufacturing an electrode and emitter in a field emission device, and devices formed from the methods. Compositions useful for the manufacture of an electrode and emitter in a field emission device are also described.

Abstract: A field emission device (10) includes a sealed container (12) with a first light-permeable portion (120) and an opposite second light-permeable portion (122). A first phosphor layer (14) is formed on the first light-permeable portion. A first light-permeable anode (16) is formed on the first light-permeable portion. A second phosphor layer (18) is formed on the second light-permeable portion. A second light-permeable anode (20) is formed on the second light-permeable portion. A shielding barrel (22) is disposed within the container and electrically connected to at least one cathode electrode (25, 26). The shielding barrel has opposite open ends facing toward the first and the second light-permeable portions respectively. The shielding barrel has an inner surface, and a slurry layer (24) containing conductive nano material is formed on the inner surface of the shielding barrel.

Abstract: An electron emission device for focusing the electrons emitted from electron emission regions and uniformly controlling the pixel emission characteristic. The electron emission device includes first and second substrates facing each other, and cathode electrodes having first electrode portions formed on the first substrate along one side thereof, and second electrode portions spaced apart from the first electrode portions at a predetermined distance. Electron emission regions are formed on the second electrode portions. Focusing electrodes fill the gap between the first and the second electrode portions while being extended toward the second substrate with a thickness greater than the thickness of the electron emission regions. Gate electrodes are formed on the cathode electrodes by interposing an insulating layer with openings exposing the electron emission regions.

Abstract: The present invention provides an electron beam apparatus provided with an electron-emitting device which has a simple structure, shows high electron-emitting efficiency and stably works. This electron beam apparatus has an insulating member and a gate formed on a substrate, a recess portion formed in the insulating member, a protruding portion that protrudes from an edge of the recess portion toward the gate and is provided on an end part of a cathode opposing to the gate, which is arranged on the side face of the insulating member; and makes an electric field converge on an end part in the width direction of the protruding portion to make an electron emitted therefrom.

Abstract: A field emission device includes a substrate, a first conductive layer formed over the substrate biased at a first voltage level, a second conductive layer formed over the substrate biased at a second voltage level different from the first voltage level, emitters formed on the first conductive layer and the second conductive layer for transmitting electrons, and a phosphor layer formed over the substrate and being disposed between the first conductive layer and the second conductive layer, wherein the electrons are transmitted from one of the first conductive layer and the second conductive layer through the phosphor layer to the other of the first conductive layer and the second conductive layer in a direction substantially orthogonal to the normal direction of the substrate.

Abstract: A method for operating a charged particle beam emitting device and, in particular, an electron beam emitting device including a cold field emitter is provided. The method includes the steps of placing the cold field emitter in a vacuum of a given pressure, the emitter exhibiting a high initial emission current I0 and a lower stable mean emission current IS under a given electric extraction field; applying the given electric extraction field to the emitter for emitting electrons from the emitter surface; performing a cleaning process by applying at least one heating pulse to the cold field emitter for heating the emitter surface, whereby the cleaning process is performed before the emission current of the cold field emitter has declined to the lower stable mean emission value IS; and repeating the cleaning process to keep the emission current of the emitter continuously above the substantially stable emission value IS.

Abstract: A field emission device (10) includes a base (12), a conductive paste (16), and at least one carbon nanotube yarn (14). The at least one carbon nanotube yarn is attached to the base using the conductive paste. This avoids separation of the at least one carbon nanotube yarn from the base by electric field force in a strong electric field. A method for making the field emission device includes the steps of: (a) providing a base; (b) attaching at least one carbon nanotube yarn to the base using conductive paste; and (c) sintering the conductive paste to obtain the field emission device with the carbon nanotube yarn firmly attached to the base.

Abstract: A non-evaporation getter material suitable for non-evaporation getters disposed in electron devices, such as fluorescent luminous tubes. The getter material is sized and shaped to more efficiently absorb gases actively at low temperatures.

Abstract: The present invention relates to a field emission device comprising an anode and a cathode, wherein said cathode includes carbon nanotubes which have been treated with an ion beam. The ion beam may be any ions, including gallium, hydrogen, helium, argon, carbon, oxygen, and xenon ions. The present invention also relates to a field emission cathode comprising carbon nanotubes, wherein the nanotubes have been treated with an ion beam. A method for treating the carbon nanotubes and for creating a field emission cathode is also disclosed. A field emission display device containing carbon nanotube which have been treated with an ion beam is further disclosed.

Abstract: The present invention provides an electron beam instrument in which variation of the trajectory of the electron beams can be suppressed even when the voltage applied to the first extractor electrode is controlled in order to stabilize the emission current amount of the electron beams. The electron beam instrument has a cold cathode field emission electron gun. The cold cathode field emission electron gun has a cold cathode, a first extractor electrode and a second extractor electrode. Distance between the cold cathode and the first extractor electrode is set to be shorter than distance between the first extractor electrode and the second extractor electrode. Voltage applied to the first extractor electrode is increased when current amount of the electron beams emitted from the cold cathode is attenuated.

Abstract: The invention is to provide a producing method for an electron emitting device of field emission type, having sufficient on/off characteristics and capable of efficient electron emission at a low voltage. There is provided a producing method for an electron emitting device including steps of preparing a plurality of electroconductive particles each covered with an insulation material having a thickness of 10 nm or less at least on a part of a surface of the particle, and forming a dipole layer on a surface of the insulation material covering each of the plurality of electroconductive particles.

Abstract: By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

Abstract: An electron emission display includes a first substrate and a second substrate facing the first substrate. An electron emission unit is arranged on the first substrate. A light emission unit is arranged on the second substrate, the light emission unit having an anode electrode for accelerating an electron beam emitted from the electron emission unit. A sealing member is adapted to seal an exhaust hole of the first substrate. A voltage supply unit is adapted to apply an anode voltage to the anode electrode via the sealing member.

Abstract: An electron emission device includes a first substrate and a second substrate facing the first substrate. A first electrode and a second electrode are formed on the first substrate and insulated from each other. Electron emission regions are electrically connected to at least one of the first electrode or the second electrode. A phosphor layer is formed on the second substrate. An anode electrode is formed on a surface of the phosphor layer. An area of the electron emission regions is an emission area, and at least one of the first electrode or the second electrode includes a pair of line portions spaced apart from each other in parallel while interposing the emission area therebetween and a connector traversing the emission area to interconnect the pair of line portions.

Abstract: A field emission electron source (10) includes a conductive base (12), a carbon nanotube (14), and a modifying layer (16). The conductive base includes a top (122). One end (142) of the carbon nanotube is electrically connected with the top of the conductive base. The other end (144) of the carbon nanotube extends outwardly away from the top of the conductive base. The modifying layer (16) is uniformly distributed and coated onto at least the surface of the other end of the carbon nanotube. The work function of the modifying layer is lower than that of the carbon nanotube.

Abstract: An electron emission device and an electron emission display having the electron emission device. The electron emission device includes a substrate, a cathode electrode disposed on the substrate, and an electron emission region electrically connected to the cathode electrode. The cathode electrode includes a sub-electrode disposed on the substrate, a sub-insulation layer disposed on the sub-electrode, a main electrode disposed on the sub-electrode and having an opening for exposing a portion of the sub-insulation layer at each of a plurality of unit pixels, a plurality of isolation electrodes disposed on the sub-insulation layer in the opening of the main electrode and spaced apart from the main electrode, and a resistive layer disposed between the main electrode and the isolation electrodes to electrically connect the main electrode to the isolation electrodes.

Abstract: An electron emission display includes first and second substrates facing each other to form a vacuum envelope, a plurality of driving electrodes formed on the first substrate, a plurality of electron emission regions controlled by the driving electrodes, a focusing electrode disposed on and insulated from the driving electrodes and provided with first openings through which electron beams pass, a plurality of phosphor layers formed on a surface of the second substrate, an anode electrode formed on surfaces of the phosphor layers, and a plurality of spacers for maintaining a gap between the first and second substrates. The focusing electrode includes second openings for forming a potential control unit for forming a potential well, the potential control unit being formed between the first openings to correspond to the spacers. The potential well attracts the electron beams, improving the directionality of the beams.

Abstract: Disclosed is a plasma display panel (PDP) apparatus having a film-type filter and a filter support structure for supporting and fixing the film-type filer to a panel of the PDP apparatus. The PDP apparatus includes a panel divided into a display region and a non-display region, and a film-type filter electrically connected to the non-display region of the panel via a ground layer or a grounding member. By such construction, the filter can be grounded and supported. The film-type filter has a main body part and a projected part which is provided in such a manner that at least one film among a plurality of films constituting the main body part are extended from an edge portion of the main body part. The projected part of the filter is electrically connected to a heat sink frame disposed on a rear side of the panel so that charges accumulated on the filter can be discharged out.

Abstract: To provide an electron source to be used for a surface analyzer such as a scanning or transmission electron microscope or an Auger electron spectroscope, or an electron beam lithography machine, particularly for a semiconductor wafer inspection apparatus such as a scanning electron microscope to be used at a low acceleration with an electron beam acceleration voltage of up to 1 kV, CD SEM or DR SEM. An electron source wherein a barium supplying source consisting of a complex oxide comprising barium oxide and an oxide of metal other than barium, is provided at a portion of a single crystal needle of tungsten or molybdenum.

Abstract: According to the present invention, a phosphorus-doped diamond film allowing a significantly reduced electron emission voltage, a method for producing the same, and a diamond electron source using the same, such diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage, are provided. Also, a method for producing a phosphorus-doped diamond film, comprising growing a diamond film on a diamond substrate by a microwave CVD method in an atmosphere containing gases (methane and hydrogen) and phosphorus with the use of tertiary butyl phosphorus as a source of addition of phosphorous, such diamond film containing phosphorus at a concentration of 1015 cm?3 or more, having a resistivity of 107 ?cm or less, and allowing a voltage for initiation of electron emission to be 30 V or less, and a diamond electron source using the same are provided.

Abstract: A thermal electron emission source includes a first electrode, a second electrode insulated from the first electrode, a carbon nanotube string electrically connected to and in contact with the first electrode and the second electrode, and a number of electron emission particles. The carbon nanotube string is composed of a number of closely packed carbon nanotube bundles, and each of the carbon nanotube bundles includes a number of carbon nanotubes. The electron emission particles are uniformly dispersed in the carbon nanotube string and are coated on the surfaces of the carbon nanotubes. A method for making the thermal electron emission source is also provided.

Abstract: An electron emission device includes first and second substrates facing each other while a vacuum space is interposed therebetween. An electron emission array is formed on the first substrate to emit electrons toward the second substrate, and phosphor layers are formed on the second substrate. An anode electrode is formed on a surface of the phosphor layers, and receives the voltage required for accelerating electron beams from the electron emission array. A grid electrode is disposed between the first and second substrates and is closer to the second substrate than to the first substrate. The grid electrode has electron beam passage holes, and receives a voltage lower than a location reference voltage.

Abstract: A device which employs an electron beam, for performing a desired function, includes an electron gun for generating the electron beam. The electron gun includes a barrel shaped rotatable structure having a plurality of annularly disposed electron sources. A curvature of a surface portion of the rotatable structure is shaped to optimize electric field concentrations. The rotatable structure further includes end portion protrusions.

Abstract: A method of batch fabrication using established photolithographic techniques allowing nanoparticles or nanodevices to be fabricated and mounted into a macroscopic device in a repeatable, reliable manner suitable for large-scale mass production. Nanoparticles can be grown on macroscopic “modules” which can be easily manipulated and shaped to fit standard mounts in various devices.

Abstract: An electron emission device includes a substrate, cathode and gate electrodes placed on the substrate in an insulated manner, and electron emission regions electrically connected to the cathode electrodes. Each of the cathode electrodes includes a line electrode having a groove at one lateral side surface thereof, and isolation electrodes formed on the substrate exposed through the groove such that the isolation electrodes are isolated from the line electrode. The electron emission regions are placed on the isolation electrodes and a resistance layer electrically connects the isolation electrodes to the line electrode.

Abstract: An electron emission device includes: a substrate; a cathode on the substrate; one or more electron emission regions electrically connected with the cathode; an insulation layer between the cathode and a gate electrode formed on the insulation layer; and a resistance layer electrically connected to the cathode and the one or more electron emission regions. Here, the resistance layer includes a boron nitride-based material.

Abstract: An electron emission device that includes a substrate, at least one electron emission region, and at least one cathode electrode disposed on the substrate and electrically connected to the electron emission region, wherein the cathode electrode has a first electrode, a plurality of second electrodes on the first electrode, a sub-insulation layer between the first and second electrodes, and a resistive layer electrically connected to the first and second electrodes.

Abstract: A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate (10) made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (11). The heat distribution (11) is formed, for example, through diffracting an energy beam (12) by a diffraction grating (13). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (11), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.

Abstract: A field emission device has an improved structure in which electron emission from a cathode is enhanced through external light radiation. The field emission device includes: a light transmitting substrate; a cathode unit arranged on the light transmitting substrate and adapted to emit electrons, the cathode unit including: a first electrode layer of a transparent conductive material arranged on the substrate; a first electron emission layer of a semiconductive polymer organic material arranged on the first electrode layer; a second electron emission layer of a composite of a carbon-based inorganic material and a semiconductive polymer organic material arranged on the first electron emission layer; and a second electrode layer of a conductive material arranged on the second electron emission layer. The field emission device further includes an anode arranged to face the cathode unit.

Abstract: A field emission display device and a method of fabricating the same are provided. The field emission display device may include a substrate, a transparent cathode layer, an insulation layer, a gate electrode, a resistance layer, and carbon nanotubes. The transparent cathode layer is deposited on the substrate. The insulation layer is formed on the cathode layer and has a well exposing the cathode layer. The gate electrode is formed on the insulation layer and has an opening corresponding to the well. The resistance layer is formed to surround the surface of the gate electrode and the inner walls of the opening and the well so as to block ultraviolet rays. The carbon nanotube field emitting source is positioned on the exposed cathode layer.

Abstract: An electron-emitting device according to the present invention is characterized by that a gate electrode is located above a cathode electrode; a insulating member is located between the gate electrode and the cathode electrode; and the gate electrode and the insulating member are provided with openings, respectively, the openings being communicated with each other, wherein the insulating member is formed by layering three or more insulating layers including a first insulating layer, which is brought in contact with the gate electrode and has an opening, of which size is approximately the same as the size of the opening of the gate electrode; and a second insulating layer, which is located nearer to the side of the cathode electrode than the first insulating layer and has a larger opening than the opening of the gate electrode.

Abstract: A fluorescence emitting device is provided using a phosphor emitting a light by bombardment of an electron beam and having excellent luminance lifetime. The electron beam excited phosphor comprises a solid solution prepared by an AlN crystal or AlN solid solution crystal formed with at least Eu, Si and oxygen represented by the composition formula Eua Alb Sic Nd Oe [Wherein a+b+c+d+e=1, and a, b, c, d and e satisfy the following conditions: 0.00001?a?0.1 0.4?b?0.55 0.001?c?0.1 0.4?d?0.55 0.001?e?0.1].

Abstract: A field emission electron source includes a substrate, a first conductive electrode terminated to provide electrons, an emitting composite layer for emitting electrons, and a second electrode insulated from the emitter layer and terminated to extract electrons through vacuum space. The emitting composite layer lies between and parallel to the said first and the second electrodes, and comprises nano-structures embedded in a solid matrix. One end of the nano-structures is truncated and exposed at the surface of the emitter layer so that both the length and the apex of the nano-structure are regulated and the exposed nano-tips are kept substantially the same distance from the gate electrode. The embedding material is chosen to form triple junctions with the exposed tip to further enhance the field.

Abstract: A field emission cathode and a method for manufacturing the same are disclosed. In the present invention, the carbon nanotube is coated with an amorphous coating material so that the above-mentioned field emission cathode resists oxidization in a high electrical field and the structure thereof can be protected. Additionally, the field emission cathode can exhibit field emission performance in a low electrical field, and generate stable current as the electrical field increases so that the efficiency and stability of the field emission current can be enhanced.

Abstract: An exemplary method for manufacturing a field electron emission source includes: providing a substrate (102); depositing a cathode layer (104) on a surface of the substrate; providing a carbon nanotube paste, coating the carbon nanotube paste on the cathode layer; calcining the carbon nanotube paste to form a carbon nanotube composite layer (110); and, irradiating the carbon nanotube composite layer with a laser beam of a certain power density, thereby achieving a field electron emission source.

Abstract: A field emission device comprises a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter for extracting electron beams from the CNT emitter and focusing the extracted electron beams onto a given position. The gate stack includes a mask layer covering the emitter electrode and provided around the CNT emitter, a gate insulating layer formed on the mask layer to a predetermined height, a mirror electrode formed on an inclined plane of the gate insulating layer, a gate electrode formed on the gate insulating layer and spaced apart from the mirror electrode, and a focus gate insulating layer and a focus gate electrode sequentially formed on the gate electrode. The field emission device is manufactured and employed in a display device in accordance with the present invention.

Abstract: A carbon nanotube emitter and its fabrication method, a Field Emission Device (FED) using the carbon nanotube emitter and its fabrication method include a carbon nanotube emitter having a plurality of first carbon nanotubes arranged on a substrate and in parallel with the substrate, and a plurality of the second carbon nanotubes arranged on a surface of the first carbon nanotubes.

Abstract: An ionizer emitter electrode is ideally formed of or at least partially coated with a carbide material, wherein the carbide material is selected from the group consisting of germanium carbide, boron carbide, silicon carbide and silicon-germanium carbide. Alternatively, a corona-producing ionizer emitter electrode is substantially formed of silicon carbide. Alternatively, a corona-producing ionizer emitter electrode is formed of an electrically conductive metal base that is at least partially coated with silicon carbide. Alternatively, a corona-producing ionizer emitter electrode ionizes gas when high voltage is applied thereto, and the emitter electrode is formed substantially of silicon carbide and has a resistivity of less than or equal to about one hundred ohms-centimeter (100 ?-cm).

Abstract: A manufacturing method of an electron-emitting device according to the present invention includes the steps of: preparing a substrate having a first electrode and a second electrode, and a conductive film for connecting the first electrode and the second electrode; and forming a gap on the conductive film by applying a voltage between the first electrode and the second electrode; wherein a planar shape of the conductive film has a V-shape portion between the first electrode and the second electrode.

Abstract: A dielectric device of higher performance is provided. An electron emitter to which the dielectric device of the present invention is applied includes an emitter formed by a dielectric, and an upper electrode and a lower electrode to which a drive voltage is applied for the purpose of electron emission. The emitter includes an upper layer formed from plural dielectric particles, and a lower layer formed from plural dielectric particles, below the upper layer. The upper layer and/or lower layer are formed by aerosol deposition.