Abstract: An electron emission device includes i) a substrate, ii) a cathode electrode on the substrate, having a first opening, and comprising an ultraviolet non-transmitting material, iii) an electron emission region in the first opening and for emitting electrons, and iv) a gate electrode electrically insulated from the cathode electrode and having a second opening through which the electrons emitted from the electron emission region pass. The ultraviolet transmittance of the gate electrode is about 30% or more. A distance between a first imaginary line passing through a center of the electron emission region and normal to a plane surface of the substrate, and a second imaginary line passing through a center of the second opening and normal to the plane surface of the substrate is about 0.5 ?m or less.

Abstract: According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention, a process for manufacturing a FED is provided comprising the steps of forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to an emission surface of the emitter.

Abstract: A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.

Abstract: A field emission device and a field emission display using the same. The field emission device includes a concave cathode electrode and an emitter formed at a center thereof. A gate electrode and a focusing gate electrode above the gate electrode serve to focus and refocus the electron beam emanating from the emitter to produce a better focused electron beam leading to improved color purity.

Abstract: An electron emission device includes a first substrate; a second substrate facing the first substrate and separated therefrom by a predetermined distance; cathode electrodes, each comprising first electrodes formed on the first substrate, and a plurality of second electrodes spaced apart from the first electrodes; electron emission regions formed on the plurality of second electrodes; resistance layers interconnecting the first electrodes and each of the plurality of second electrodes while surrounding the electron emission regions; an insulating layer positioned over the resistance layers and the cathode electrodes; and gate electrodes formed over the insulating layer.

Abstract: An electron emission device includes a first substrate and a second substrate provided opposing one another with a predetermined gap therebetween. A first electrode is formed on the first substrate. A second electrode is formed on the first substrate crossing the first electrode. Each second electrode includes an auxiliary electrode and a main electrode formed to a thickness that is less than a thickness of the auxiliary electrode. An insulation layer is interposed between the at least first electrode and second electrodes. At least one anode electrode is formed on the second substrate; and phosphor layers are formed on one surface of the at least one anode electrode.

Abstract: An electron source substrate including: a substrate; an electron-emitting device having a pair of device electrodes locating on the substrate and an electroconductive thin film which is provided between the device electrodes and has an electron-emitting region; and an antistatic film which is come into contact with at least the pair of device electrodes and covers over an exposed surface of the substrate, wherein a leakage current flowing between the device electrodes in a non-driving mode at a low voltage is suppressed. A high-impedance portion which obstructs the current caused across the pair of device electrodes through the antistatic film is provided in the antistatic film.

Abstract: A dielectric device of higher performance is provided. An electron emitter, to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode and a lower electrode to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method, and the surface roughness of the upper surface thereof is controlled in the range from 0.1 to 3 in Ra.

Abstract: A field emission device (FED) includes an electrostatic lens structure.

Abstract: A cathode substrate 10 is heated to 400 to 600° C. in the atmosphere of hydrocarbon gas such as methane and the gas is allowed to react with the surface of the cathode substrate 10 by a thermal CVD method. Thus, an electron emission source in which graphite nano-fibers 11 are allowed to grow in a gaseous-phase on the surface of the cathode substrate 10 by using nickel or iron existing on the surface of the cathode substrate 10 as a nucleus is held between upper and lower end hats 12 to form a cathode part 13.

Abstract: The present invention relates to an internally heated cathode. More specifically, the internally heated cathode that comprises an a cavity structure, where at least a portion of the cavity structure forms an emission material portion, the cavity structure defining a cavity, and a heater disposed within the cavity, providing for an efficient, durable, and long lasting cathode that requires less power.

Abstract: An electron emission device having a high electron emitting rate and a display including the device are prodivided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer.

Abstract: A ballistic electron surface-emitting device (BSD) emitter that can be used in a field emission display (FED). The emitter being made of metallic carbon nanotubes extending in a direction that is normal to a surface of the cathode. The carbon nanotubes are designed so that electrons therein can experience a ballistic effect where the mean free path between collisions is as large or larger than a length of the carbon nanotube and that the width of the carbon nanotube being a fermi wavelength. On an opposite end of the carbon nanotubes is a thin metal electrode layer and a thin insulating layer to protect the carbon nanotubes from damage.

Abstract: An electron emission device with conductive layers for preventing accumulation of static charges on an insulating layer of the device is shown that does not require an independent driving circuit. The device includes cathode electrodes formed on a substrate and separated from gate electrodes by an insulating layer formed over the cathode electrodes, all inside a partial vacuum chamber. Crossings of cathode and gate electrodes form the display areas while in the non-display areas of the insulating layer, that are susceptible to accumulation of electrostatic charge, conductive layers are formed parallel to the cathode or gate electrodes, for the most part separated from these electrodes by the insulating layer. Outside the device chamber, the conductive layers are electrically coupled to their corresponding electrodes. Conductive layers thus formed and coupled discharge accumulated static charge over the insulating layers inside the device to the outside circuit.

Abstract: An exemplary spin-polarized electron source includes a cathode, and a one-dimensional nanostructure made of a compound (e.g., group III-V) semiconductor with local polarized gap states. The one-dimensional nanostructure includes a first end portion electrically connected with the cathode and a second end portion located/directed away from the cathode. The second end portion of the one-dimensional nanostructure functions as a polarized electron emission tip and is configured (i.e., structured and arranged) for emitting a spin-polarized electron current/beam under an effect of selectably one of a magnetic field induction and a circularly polarized light beam excitation when a predetermined negative bias voltage is applied to the cathode. Furthermore, a spin-polarized scanning tunneling microscope incorporating such a spin-polarized electron source is also provided.

Abstract: An electron source include a first cathode electrode disposed over a substrate and terminated to provide electrons; an emitter layer disposed over the cathode electrode and formed from one or plurality vertically aligned and mono-dispersed nano-structures that are truncated to the same length, embedded in a solid matrix and protruding above the surface for emitting electrons; an insulator disposed over the emitter layer and having one or plurality of apertures, each is self-aligned with and exposes one nano-structure in the emitter layer; and a second gate electrode disposed over the insulator, having one or plurality of apertures self-aligned with the apertures in the insulator and terminated to extract electrons from the exposed nano-structures through the apertures. The gate aperture is substantially less than one micrometer and the gated nano-structures can have a density on the order of 108/cm2.

Abstract: An electronic device in which a substrate with a pair of electrodes is provided and a carbon nanotube is formed or arranged in relation to the electrodes.

Abstract: A carbon nanotube field emission device (100) includes a substrate (10), and a carbon nanotube array (30) formed on and secured to the substrate. This avoids separation of the carbon nanotubes from the substrate by electric field force in a strong electric field. Tips of the carbon nanotubes are exposed. A method for manufacturing the carbon nanotube field emission device includes the steps of: (a) depositing a catalyst film (20) on a substrate; (b) forming a carbon nanotube array on the substrate; (c) injecting an adhesive into the carbon nanotube array, and drying the adhesive; and (d) treating surfaces of the carbon nanotube array by laser. The carbon nanotube field emission device has reduced shielding between adjacent carbon nanotubes, reduced threshold voltage, and increased field emission current.

Abstract: A flat lamp device includes lower and upper glass plates facing each other in parallel; spacers interposed between the plates to keep a distance therebetween; a cathode electrode singly formed over the entire upper surface of the lower glass plate; an insulation film formed on the cathode electrode; semiconductor films independently patterned on the insulation at intervals; a catalyst metal layer laminated on a buffer metal layer to improve adhesive force of the catalyst metal formed on the semiconductor films; carbon nano-tubes formed on the catalyst metal layer; a grid electrode installed above the carbon nano-tubes between the plates to guide electron emission from the carbon nano-tubes with a mesh shape having an opening for passage of the emitted electrons; an anode electrode formed below the upper glass plate to accelerate the emitted electrons; and a fluorescent layer formed on a lower surface of the anode electrode.

Abstract: A field emission light source (100) includes: a cathode (111); a nucleation layer (112) formed on the cathode; a field emission portion (102) formed on the nucleation layer; and a light-permeable anode (117) arranged over the cathode. The field emission portion includes an isolating layer (113) formed on the cathode; a plurality of isolating posts (114) disposed on the isolating layer; and a plurality of field emitters (115) located on the respective isolating posts. The field emitters contain molybdenum. The isolating posts contain silicon carbon. Preferably, the field emitter has a diameter ranging from about 0.5 nanometers to 10 nanometers.

Abstract: A surface-emission cathode formed on an insulating surface having cantilevered, i.e. “undercut,” electrodes. Suitable insulating surfaces include negative electron affinity (NEA) insulators such as glass or diamond. The cathode can operate in a comprised vacuum (e.g., 10?7 Torr) with no bias on the electrodes and low vacuum electric fields (e.g., at least 10 V cm?1). Embodiments of the present invention are inexpensive to fabricate, requiring lithographic resolution of approximately 10 micrometers. These cathodes can be formed over large areas for use in lighting and displays and are suitable for satellite applications, such as cathodes for tethers, thrusters and space-charging neutralizers.

Abstract: A field emission cathode includes a conductive substrate and a carbon nanotube film disposed on a surface of the conductive substrate. The carbon nanotube film includes a plurality of successive and oriented carbon nanotube bundles parallel to the conductive substrate, the carbon nanotubes partially extrude from the carbon nanotube film. A method for fabricating the field emission cathode includes the steps of: (a) providing a conductive substrate; (b) providing at least one carbon nanotube film, the carbon nanotube film including a plurality of successive and oriented carbon nanotube bundles joined end to end, the carbon nanotube bundles parallel to the conductive substrate, and (c) disposing the at least one carbon nanotube film to the conductive substrate to achieve the field emission cathode.

Abstract: An electron emission display device is capable of focusing electrons emitted from an electron emission region by using small gate holes formed on a thick insulating layer. The electron emission device includes a substrate, a cathode electrode formed on the substrate, a insulating layer formed on the cathode electrode, a gate electrode formed on the insulating layer, and the electron emission region formed on the cathode electrode. In the electron emission device, the insulating layer is provided with a first insulating layer and at least one second insulating layer formed partly on the first insulating layer, and the gate electrode has a stepped portion along a surface of the insulating layer and an inclined portion to connect upper and lower end portions of the stepped portion.

Abstract: Disclosed is an electron emission device and an electron emission display using the same, wherein the electron emission device has an improved structure for focusing an electron beam. The electron emission device comprises: first and second electrodes formed on a plate and spaced from each other by a predetermined distance; an insulator formed on the entire area of the plate and formed with an opening through which a portion of the first electrode between the first and second electrodes is at least partially exposed; an electron emitter formed on a predetermined region of the first electrode and exposed through the opening; and a third electrode formed on the insulator and connected to the second electrode, wherein a voltage difference between the first and second electrodes causes the electron emitter to emit an electron and the emitted electron is focused by the third electrode.

Abstract: An apparatus for focusing electrons being emitted from a field emission device comprises a cathode metal layer (20,44,52) formed over a first portion of a substrate (12,41,51) to partially define a sidewall (23) for a trench (25) in a second portion of the substrate. A ballast layer (22,46,53) is formed over the second portion, the cathode metal layer (20,44,52), and the sidewall (23). A first dielectric layer (24,47,54) is formed over the ballast layer (22,46,53) in the first portion and a gate extraction metal layer (26,48,55) is formed thereover. At least one emitter (30) is formed above the substrate and in the trench (25) having the sidewall (23) defined by the first dielectric layer (24,47,54) and the cathode metal layer (20,44,52). The ballast layer (22,46,53) extends along the sidewall and conductively contacts the cathode metal layer and the at least one emitter and provides a force that counteracts the sidewise pull of the gate extraction metal layer (26,48,55).

Abstract: A thermal-electron source includes a substrate; and a thermionic cathode having conductivity, and being provided on the substrate, and including a plurality of microscopic pores on a surface of the thermionic cathode.

Abstract: A cold cathode type flat panel display which is an image display device includes a vacuum panel container composed of a cathode substrate in which plural cold cathode type electron sources are arranged, an anode substrate, plural spacers for supporting the cathode substrate and the anode substrate, and a glass frame. Plural electrical lines extend in a line direction and a row direction across an interlayer insulator on the cathode substrate. Parts of lines positioned in an upper layer of the plural electrical lines are made into scan lines and lines positioned in a lower layer are made into data lines. Further, parts of the electrical lines positioned in the upper layer are made into spacer lines for giving to the spacers a voltage lower than an acceleration voltage which is applied to an accelerating electrode.

Abstract: A method for the self assembly of a macroscopic structure with a pre-formed nano object is provided. The method includes processing a nano object to a desired aspect ratio and chemical functionality and mixing the processed nano object with a solvent to form a suspension. Upon formation of the suspension, a substrate is inserted into the suspension. By evaporation of the solvent, changing the pH value of the suspension, or changing the temperature of the suspension, the nano objects within the suspension deposit onto the substrate in an orientational order. In addition, a seed crystal may be used in place of the substrate thereby forming single-crystals and free-standing membranes of the nano-objects.

Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

Abstract: A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.

Abstract: An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are used in electron beam and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and electronic devices that uses such electron emission cathode and electron emission source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode being in a columnar form having a sharpened acute section in one place of an electron emitting portion and being constituted by at least two types of semiconductors that differ in electric properties.

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises a cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract: A method of manufacturing an electron-emitting source includes first to third steps. In the first step, a cathode structure made of a metal containing any one of ion, nickel, cobalt, and chromium is heated to a first temperature in a reaction furnace to which a carbon source gas has been introduced, to form a plurality of first carbon nanotubes on the cathode structure by chemical vapor deposition. In the second step, the metal serving as a material of the cathode structure is deposited on at least either one of the cathode structure and the plurality of first carbon nanotubes, to form a catalyst metal layer. In the third step, the cathode structure including the catalyst metal layer is heated to a second temperature higher than the first temperature in the reaction furnace to which the carbon source gas has been introduced, to form a plurality of second carbon nanotubes which are thinner than the first carbon nanotubes on the catalyst metal layer by chemical vapor deposition.

Abstract: A carbon-based composite particle for an electron emission source comprises a particle of a material selected from the group consisting of metals, oxides, and ceramic materials; and a carbon-based material such as a carbon nanotube which is partially embedded inside the particle and which partially protrudes from the surface of the particle.

Abstract: A cold-cathode electron source is formed that successfully achieves a high frequency and a high output. Embodiments include a cold-cathode electron source comprising emitters having a tip portion tapered at an aspect ratio R of not less than 4, thereby decreasing capacitance between the emitters and a gate electrode by a degree of declination from the gate electrode, such that the cold-cathode electron source is able to operate at a high frequency. Embodiments also include a cold-cathode electron source formed of a diamond with a high melting point and a high thermal conductivity, such that the emitters operate at a high current density and at a high output.

Abstract: The invention provides a display device using thin film type electron sources having a structure that can be formed in a simple manufacturing process. A lower electrode, a protective insulating layer and an interlayer film are formed on a cathode substrate. An upper bus electrode made from a laminated film of a metal film lower layer and a metal film upper layer is provided further on the interlayer film. A film of an upper electrode of a thin film type electron source for each pixel constituted by an insulating layer serving as an electron accelerating layer on the lower electrode and the upper electrode is formed on two stripe electrodes of the upper bus electrode in that pixel and another upper bus electrode in an adjacent pixel by sputtering. Then, the upper electrode is separated by self-alignment due to a setback portion of the metal film lower layer and an appentice of the metal film upper layer of the corresponding upper bus electrode.

Abstract: An electron-emitting device is provided with improved electron emitting efficiency. An electron-emitting device includes first and second electroconductive films disposed (21a, 21b) on a surface of a substrate in opposition to each other to form a gap (8) between ends of the first and second electroconductive films. The end of the first electroconductive film includes a portion (A) the minimum distance d1 from which to the second electroconductive film (B) is 10 nm or less. Let d2 denote a minimum distance between the end of the first electroconductive film which is away from the portion the minimum distance d1 from which to the second electroconductive film is 10 nm or less by the minimum distance d1 and the end of the second electroconductive film. The relation of d2/d1?1.2 is satisfied.

Abstract: A cold cathode light emitting device includes a plurality of first electrodes, a plurality of insulating layers, a plurality of second electrodes and a third electrode. The insulating layers are laminated on the first electrodes. The second electrodes are provided on the insulating layers to intersect the first electrodes. The third electrode emits light upon receipt of electrons. At least one hole is provided at intersections of the first electrodes and second electrodes. The hole has a first diameter d1 at a position where the insulating layers are in contact with the first electrodes and a second diameter d2 at a position where the insulating layers are in contact with the second electrodes, where d1 is smaller than d2. A nanofiber-structure layer is formed on the first electrodes in an opening portion having the first diameter d1, provided in the at least one hole on the side of the first electrodes.

Abstract: A field emission device having cold cathode devices including an emitter and a lead electrode, and the field emission device is provided with the plural kinds of cold cathode device groups classified based on the emission property of the cold cathode device. This field emission device has a member for allowing the cold cathode device group to perform emission by successively changing the cold cathode device group that mainly performs emission based on the difference in the emission property. Thus, it is possible to maintain the emission current at a predetermined necessary value or more and to realize the long lifetime of the field emission device.

Abstract: A field emission display includes first and second substrates provided opposing one another with a predetermined gap therebetween; electron emission sources provided on one of the first and second substrates; an electron emission inducing assembly for inducing the emission of electrons from the electron emission sources; and an illuminating assembly provided on the substrate on which the electron emission sources are not formed, the illuminating assembly realizing images by the emission of electrons from the electron emission sources. The electron emission sources include a carbon nanotube layer and a base layer, the base layer connecting the carbon nanotube layer to the substrate and applying a voltage to the carbon nanotube layer required for the emission of electrons. Also, the carbon nanotube layer is provided on the base layer in a state substantially un-mixed with the base layer.

Abstract: A light source device for a spectrophotometer includes a light source chamber, a light source retained in the light source chamber and having an electrode therein for generating light, an electrode support part connected to the electrode and extending outside the light source chamber, and a cover disposed around the electrode support part for covering a portion of the electrode support part situated outside the light source chamber. A cooling mechanism is installed for cooling the light source chamber from an outside thereof so that the light source is not directly cooled by means of the cover. The spectrophotometer includes the light source device.

Abstract: An electron-emitting device substrate includes a substrate and a plurality of surface conduction electron-emitting elements. Each surface conduction electron-emitting element comprises a pair of opposing electrodes disposed on the substrate and a conductive circular pattern disposed between the opposing electrodes and contacting the electrodes. The electron-emitting elements are arrayed in a matrix formation, the matrix having rows and columns in orthogonal directions. The electron-emitting elements are formed on a front surface of the substrate. The front surface is configured to have a surface roughness that is less than a surface roughness of a back surface of the substrate and is less than 0.5 s.

Abstract: Graphite comprises atoms arranged in discrete layers (100). The perpendicular distance between these layers is the ‘d-spacing’ (101). A field emission material is obtained by expanding the d-spacing (102). Such expansion may be achieved by an intercalant that has been introduced between layers of the material. Such an intercalant may reside, or may no longer reside, in the material. The material may be placed in position on a substrate by a printing process, prior to expansion. Such field emission material may be used in cold cathodes in field electron emission devices.

Abstract: The invention provides a charged particle beam device, an emitter module for emitting charged particle beams and a method of operation thereof. Thereby, a charged particle beam emitter (15) emitting charged particles along an optical axis (1) is realized. On the same carrier body (32), a cleaning emitter (16) for emitting charged particles approximately along the optical axis (1) is realized. Thus, an improved cleaning can be provided.

Abstract: Electrical devices which incorporate electrodes coated with carbon nanotubes. An anode is placed in conductive relationship with the coated electrode. A gas medium is placed between the electrode and anode which medium also participates in the transfer of electrons. Using specific gas media in combination with nanotube coated electrodes allows for the production of electromagnetic radiation sources which have extended life, reduced power requirements, and significantly decreased operating temperatures.

Abstract: A field emission display including a first and a second substrate being separate and facing each other, one or more gate electrodes formed on the first substrate, and cathode electrodes formed on the one or more gate electrodes while interposing an insulating layer. The cathode electrode having a double-layered structure, an electron emission source contacting the cathode electrodes, at least one anode electrode formed on the second substrate, and a phosphor screen formed on the anode electrode.

Abstract: Disclosed is an image pickup device capable of greatly reducing delay in drive signals supplied to field emission devices, and cross-talk and the like that originate in these drive signals. The image pickup device comprises a photoelectric conversion film for receiving incident light on one side thereof; a field emission layer having an electron emitting surface apart from and facing the other side of the photoelectric conversion film, and including a plurality of electron emission devices; and a drive layer formed on a back side of the field emission layer and including a plurality of device drive circuits for supplying drive signals to each of back electrodes of the plurality of electron emission devices.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: A discharge electrode emitting electrons into a discharge gas, encompasses an emitter and current supply terminals configured to supply electric current to the emitter. The emitter embraces a wide bandgap semiconductor having at 300 K a bandgap of 2.2 eV or wider. Acceptor impurity atoms and donor impurity atoms being doped in the wide bandgap semiconductor, the activation energy of the donor impurity atoms being larger than the activation energy of the acceptor impurity atoms.

Abstract: A display device consisting of an electron-emitting device which is a laminate of an insulating layer and a pair of opposing electrodes formed on a planar substrate. A portion of the insulating layer is between the electrodes and a portion containing an electron emitting region in between one electrode and the substrate. Electrons are emitted from the electron emission region by a voltage to the electrodes, thereby stimulating a phosphorous to emitting light.