Abstract: A triode type field emission display in accordance with the invention includes: a cathode electrode (12) formed on an insulation substrate (10); an insulation layer (13) formed on the cathode electrode; a gate electrode (14) formed on the insulation layer; a number of emitters (16); and an anode electrode (18) with a phosphor layer (19) positioned over the gate electrode. The emitters are distributed on portions of the cathode electrode at two sides of the insulation layer, and a height of the emitters is less than a thickness of the insulation layer. The emitters are capable of emitting electrons from tips thereof, and the emitted electrons are focused on the phosphor layer by an electric field generated by the gate electrode.

Abstract: A field emission device having a focusing control electrode, and a field emission display (FED) including the same.

Abstract: A discharge electrode emitting electrons into a discharge gas, encompasses an emitter and current supply terminals configured to supply electric current to the emitter. The emitter embraces a wide bandgap semiconductor having at 300 K a bandgap of 2.2 eV or wider. Acceptor impurity atoms and donor impurity atoms being doped in the wide bandgap semiconductor, the activation energy of the donor impurity atoms being larger than the activation energy of the acceptor impurity atoms.

Abstract: An electron emission device includes: a substrate; first and second electrodes insulated from each other and arranged on the substrate and having predetermined shapes; an electron emission region arranged on the substrate; and a first passivation layer entirely covering at least one of the first and second electrodes and exposing at least a portion of the electron emission region. An electron emission display includes: first and second substrates opposed to each other; first and second electrodes insulated from each other and arranged transversely to each other on the first substrate and having predetermined shapes; an electron emission region arranged on the substrate; a first passivation layer entirely covering at least one of the first and second electrodes and exposing at least a portion of the electron emission region; and an image display substrate having an anode electrode and a fluorescent layer arranged on the second substrate.

Abstract: Disclosed is an image pickup device capable of greatly reducing delay in drive signals supplied to field emission devices, and cross-talk and the like that originate in these drive signals. The image pickup device comprises a photoelectric conversion film for receiving incident light on one side thereof; a field emission layer having an electron emitting surface apart from and facing the other side of the photoelectric conversion film, and including a plurality of electron emission devices; and a drive layer formed on a back side of the field emission layer and including a plurality of device drive circuits for supplying drive signals to each of back electrodes of the plurality of electron emission devices.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: An electron emission device includes first and second substrates facing each other, an electron emission unit provided on a first surface of the first substrate, a light emission unit provided on a first surface of the second substrate facing the first substrate, and a sealing member for sealing peripheries of the first and second substrates together. The sealing member contacts a first insulation layer of the electron emission unit.

Abstract: An electron emitter has an emitter made of a dielectric material and an upper electrode and a lower electrode for being supplied with a drive voltage for emitting electrons. The upper electrode is disposed on an upper surface of the emitter, and the lower electrode is disposed on a lower surface of the emitter. The upper electrode has a plurality of through regions through which the emitter is exposed. Each of the through regions of the upper electrode has a peripheral portion having a surface facing the emitter and spaced from the emitter.

Abstract: This invention provides novel methods of fabricating novel gated field emission structures that include aligned nanowire electron emitters (individually or in small groups) localized in central regions within gate apertures. It also provides novel devices using nanoscale emitters for microwave amplifiers, electron-beam lithography, field emission displays and x-ray sources. The new emission structures are particularly useful in the new devices.

Abstract: The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field effect transistor includes a semiconductive layer configured to form a channel region; a pair of spaced conductively doped semiconductive regions in electrical connection with the channel region of the semiconductive layer; a gate intermediate the semiconductive regions; and a gate dielectric layer intermediate the semiconductive layer and the gate, the gate dielectric layer being configured to align the gate with the channel region of the semiconductive layer. In one aspect, chemical-mechanical polishing self-aligns the gate with the channel region. According to another aspect, a field emission device includes a transistor configured to control the emission of electrons from an emitter.

Abstract: A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

Abstract: An electron emission element includes a substrate, a first conductive layer provided on the substrate, an electron emission part formed on the first conductive layer, an insulating layer formed on the first conductive layer and having a first opening part arranged such that the electron emission part is located within the first opening part, and a second conductive layer formed on the insulating layer and having a second opening part such that the electron emission part is located within the second opening part, wherein an electric-field concentration part which concentrates an electric field is provided within the second opening part.

Abstract: An electron emission device comprising an electron emission element (1) having a lower electrode (2), an upper electrode (5) consisting of a thin film, the surface of the upper electrode (5) being exposed to external space, and a semiconductor layer (4) formed between the lower electrode and the upper electrode, a counter electrode (21) provided to face the upper electrode (5) across the external space, a fine particle charging voltage control unit (22) for applying a voltage that charges fine particles deposited on the surface of the upper electrode (5) to between the upper electrode (5) and the lower electrode (2), and flying voltage control unit (23) for applying a voltage that sends charged fine particles flying from the surface of the upper electrode (5) to between the upper electrode (5) and the counter electrode (21), wherein the fine particle charging voltage control unit is operated to charge deposited fine particles, and the flying voltage control unit is operated to sent charged fine particles flyi

Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

Abstract: This invention provides compositions of matter that contain an electron emitting substance and an expansion material. The expansion material may, for example, be an intercalation compound. When a film is formed from the composition, expansion of the expansion material typically causes rupturing or fracturing of the film. No further treatment of the surface of the film is typically required after expansion of the expansion material to obtain good emission properties. A surface formed from such a fractured film acts as an efficient electron field emitter and thus is useful in vacuum microelectronic devices.

Abstract: A given field emission element includes a carbon nanotube field emission wire and at least one supporting protective layer coating an outer surface of the carbon nanotube field emission wire. The carbon nanotube field emission wire is selected from a group consisting of a carbon nanotube yarn, a wire-shaped CNT-polymer composite, and a wire-shaped CNT-glass composite. A method for manufacturing the described field emission element includes the steps of: (a) providing one carbon nanotube field emission wire; (b) forming one supporting protective layer on an outer surface of the carbon nanotube field emission wire; and (c) cutting the carbon nanotube field emission wire to a predetermined length and treating the carbon nanotube emission wire to form the field emission element.

Abstract: A field emission element includes one supporting wire and at least one field emission layer coated or otherwise formed on an outer surface of the supporting wire. Each field emission layer includes a plurality of carbon nanotubes (CNTs) and is selected from a group consisting of CNT-polymer composites, CNT-glass composites and single-layer/multi-layer CNT films. A method for manufacturing the described field emission element is also provided. The method includes the steps of: (a) providing one supporting wire; (b) forming at least one field emission layer on an outer surface of the supporting wire; and (c) cutting the supporting wire, after forming the at least one field emission layer thereon, according to a predetermined length and then treating the at least one field emission layer on the supporting wire to form the field emission element.

Abstract: Novel heterodiamondoid-containing field emission devices (FED's) are disclosed herein. In one embodiment of the present invention, the heteroatom of the heterodiamondoid comprises an electron-donating species (such as nitrogen) as part of the cathode or electron-emitting component of the field emission device.

Abstract: An electron-emitting device is equipped with a pair of first electroconductive members arranged on a substrate with an interval between them, wherein the interval becomes narrower at an upper position distant from a surface of the substrate than at a position on the surface, and a peak of one of the pair of the first electroconductive members is higher than a peak of the other of the pair of the first electroconductive members, and further an electron scattering surface forming film including an element having an atomic number larger than those of elements constituting the first electroconductive members as a principal component is provided on a surface of the one of the first electroconductive members.

Abstract: An electron emission source and a field emission display device are disclosed. The electron emission source includes a substrate and an electron emission layer formed on the substrate. The electron emission layer includes a composition of diamond-like carbon (DLC) film structures. The height of the DLC flakes is in micrometer scale, and the thickness of the DLC flakes is in nanometer scale. Hence, the aspect ratio of the DLC film structures is high. Therefore, the DLC film can be used as a good electron emission source. A conductive layer can be optionally deposited on the surface of the substrate for further enhancing DLC film in electron emission.

Abstract: An electron emitting element is of a structure in which a semiconductor layer is formed between an upper electrode and a lower electrode, wherein an organic compound adsorption layer is formed on a semiconductor surface of the semiconductor layer by causing the organic compound to be adsorbed on the semiconductor surface. Herein, the semiconductor layer can be made of silicon or polysilicon and partly or as a whole porous. The absorbed organic compound can be a non-cyclic hydrocarbon, a compound obtained by coupling at least an aldehyde group to a non-cyclic hydrocarbon, or a non-cyclic hydrocarbon having an unsaturated bond. As a result, there can be provided an electron emitting element capable of stably operating in the atmosphere or in a low vacuum even when being operated in the atmosphere or in the low vacuum and an imaging device using the electron emitting element.

Abstract: The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

Abstract: To obtain a paste for electron sources which can enhance heat resistance of carbon nanotubes, which can suppress burn-out of the carbon nanotubes even during heating at a high temperature, and can exhibit a high electron emission performance, boron (B) is added to the paste formed of the carbon nanotubes and metal. Due to the addition of boron, the oxidation of the carbon nanotubes can be suppressed, and the degradation of the electron emission characteristics and the degradation of the uniformity of the emission of electrons during the heating process such as baking can be prevented.

Abstract: An FED device includes an anode electrode formed on a substrate; a phosphor layer formed on the anode electrode; and field emission devices for emitting at least two electron beams onto the phosphor layer. An area where a fluorescent material is excited can be enlarged and luminance and efficiency of the FED can be enhanced.

Abstract: A field emission display includes a first substrate, at least one gate electrode formed on the first substrate, cathode electrodes formed on the first substrate, an insulation layer formed between the at least one gate electrode and the cathode electrodes, emitters electrically contacting the cathode electrodes, and formed in pixel regions of the first substrate, counter electrodes electrically connected to the at least one gate electrode and provided such that the counter electrodes and emitters have a first predetermined gap therebetween, a second substrate provided opposing the first substrate with a second predetermined gap therebetween, wherein emitter-receiving sections are provided in the cathode electrodes, dividers are formed between the emitter-receiving sections, the emitters are electrically contacted with an edge of the cathode electrodes corresponding to a shape of the emitter-receiving sections, and at least a part of each of the counter electrodes is provided within the corresponding emitter-r

Abstract: An electron emission device and an electron emission display having the electron emission device. The electron emission device includes a substrate, a cathode electrode disposed on the substrate, and an electron emission region electrically connected to the cathode electrode. The cathode electrode includes a sub-electrode disposed on the substrate, a sub-insulation layer disposed on the sub-electrode, a main electrode disposed on the sub-electrode and having an opening for exposing a portion of the sub-insulation layer at each of a plurality of unit pixels, a plurality of isolation electrodes disposed on the sub-insulation layer in the opening of the main electrode and spaced apart from the main electrode, and a resistive layer disposed between the main electrode and the isolation electrodes to electrically connect the main electrode to the isolation electrodes.

Abstract: There are provided a stable electron-emitting device with less fluctuation in electron-emitting properties and a method of fabricating the electron-emitting device. The electron-emitting device has a substrate; a plurality of columnar first regions respectively orientated substantially perpendicular to the surface of the substrate; a second region provided between the respective first regions higher than the first regions in resistance; and an electron emission layer covering the columnar first regions and the second region.

Abstract: Provided is an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate, first and second carbon films laid with a first gap in between on the surface of the substrate, and first and second electrodes electrically connected to the first carbon film and to the second carbon film, respectively. In the electron-emitting device, a narrowest gap portion between the first carbon film and the second carbon film in the first gap is located above a surface of the substrate and the substrate has a depressed portion, at least, in the first gap.

Abstract: A composition for forming an electron emitter, an electron emitter formed using the composition, and a backlight unit including the electron emitter, where dispersion of the electron emission material in the composition is increased, and the composition includes an electron emission material, a vehicle, and carbon-based filler particles.

Abstract: A field emission lamp generally includes a tube having at least one open end, at least one sealing member respectively arranged in a corresponding open end of the tube, an anode, and a cathode. The anode includes an anode conductive layer formed on an inner surface of the tube, a fluorescent layer formed on the anode conductive layer, and at least one anode electrode electrically connected with the anode conductive layer and extending out of the at least one sealing member. The cathode includes an electron emission element and at least one cathode electrode electrically connected with the electron emission element and extending out of the at least one sealing member. The electron emission element has an electron emission layer. The electron emission layer includes getter powders therein to exhaust unwanted gas in the field emission lamp, thereby ensuring the field emission lamp with a high degree of vacuum during operation thereof. A method for making such field emission lamp is also provided.

Abstract: An object of the present invention is to enhance a converging property of an electron beam in an electron-emitting device in which a cathode electrode, an insulating layer, and a gate electrode are laminated and a through hole is formed by partially removing the gate electrode so as to obtain an exposed portion of the cathode electrode. In such an,electron-emitting device in which the cathode electrode, the insulating layer, and the gate electrode are laminated and the through hole is formed by partially removing the gate electrode so as to obtain the exposed portion of the cathode electrode, only a central region of the electron-emitting layer on the cathode electrode is connected to the cathode electrode. With this structure, it becomes possible to generate an electron beam only from the central region of the electron-emitting layer connected to the cathode electrode and to realize an electron-emitting device having a small beam diameter and a high-definition image-forming apparatus.

Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: To provide an electron-emitting device, an electron source, an image-forming apparatus, and a method for manufacturing the electron-emitting device whereby it is possible to reduce a device capacity and a driving voltage, to improve the efficiency of emitting electrons, and to obtain high-resolution beam. The extracting electrode and the cathode electrode are provided on an insulating substrate, a layer having growth selectivity of fibrous carbon is formed on the cathode electrode, and the fibrous carbon is grown via catalyst particles formed on the layer.

Abstract: The present invention provides an electron emitting device comprising: a pair of conductors opposed to each other on a substrate; and a pair of deposition films having carbon as a main component which are respectively connected to the pair of conductors and disposed with a gap therebetween. The deposition film contains sulfur in a range of not less than 1 mol % and not more than 5 mol % as a ratio to carbon.

Abstract: The present invention provides a cathode plate of the field emission display and the fabrication method thereof. The emission layer is formed on the electrode layer within the trench in a self-aligned way by screen printing or ink-jetting. Since the emission layer is accurately aligned with the electrode layer, the pattern quality is improved and the overflow or disrupture problems in screen printing are alleviated.

Abstract: An electron emission device includes cathode electrodes and gate electrodes formed on a first substrate and crossing each other while interposing an insulation layer. Opening portions are formed at the gate electrodes and the insulation layer while exposing the cathode electrodes. Electron emission sources are formed on the cathode electrodes exposed through the opening portions each with an area smaller than the area of the opening portion. An anode electrode is formed on a second substrate. Phosphor layers are formed on the anode electrode with a length extending in a first direction and a width extending in a second direction. Each electron emission source satisfies the following condition: a<b. In the condition, “a” indicates the distance between the electron emission source and the gate electrode in the first direction, and “b” indicates the distance between the electron emission source and the gate electrode in the second direction.

Abstract: An emitter array produced using etch mask and a method for making such an etch mask. The emitter comprises a substrate, forming a conducting layer on the substrate, forming an emitting layer on the conducting layer, forming an etch mask having a controlled distribution of a plurality of mask sizes over the emitting layer, and forming at least one emitter by removing portions of the emitting layer using the etch mask. The method for making the etch mask comprises forming an etch mask layer over an emitting layer, forming a patterning layer having a controlled distribution of mask sizes over the etch mask layer, and forming the etch mask by removing portions of the etch mask layer using the controlled distribution of mask sizes in the patterning layer.

Abstract: An image display apparatus including a rear plate and a face plate disposed opposite to each other, the rear plate being equipped with a plurality of electron-emitting devices, each provided with a pair of electrodes and an electroconductive film including an electron-emitting region disposed between the electrodes, the face plate being equipped with a phosphor for displaying an image and a film exposed on a surface of the phosphor, the film comprising a metal or a metal compound material. A film comprising the same metal or the same metal compound material as the metal or the metal compound material constituting the film exposed on the surface of the phosphor is formed on each of the electroconductive films of the plurality of electron-emitting devices to have a thickness in a range from 0.2 nm to 4.5 nm.

Abstract: An apparatus is provided for reducing color bleed in a flat panel display. The apparatus comprises an anode (30) with a plurality of phosphors (28) of at least two colors sequentially disposed thereon. A cathode (14) is arranged in parallel opposed position to and separated from the anode (30) and contains a plurality of pads (40) of emitters. Each pad (40) is disposed on the cathode (14) in spaced relationship to and aligned with one of the at least two colors, respectively, wherein electrons from each of the plurality of pads of emitters that drift from its intended phosphor (28) are encouraged to drift toward an adjacent phosphor (28) of the same color.

Abstract: A field emission-type electron source has a plurality of electron source elements (10a) formed on the side of one surface (front surface) of an insulative substrate (11) composed of a glass substrate. Each of electron source elements (10a) includes a lower electrode (12), a buffer layer (14) composed of an amorphous silicon layer formed on the lower electrode (12), a polycrystalline silicon layer (3) formed on the buffer layer (14), a strong-field drift layer (6) formed on the polycrystalline silicon layer (3), and a surface electrode (7) formed on the strong-field drift layer (6). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.

Abstract: This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 ??-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.

Abstract: An apparatus for stabilizing the threshold voltage in an active matrix field emission device is disclosed. The apparatus includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.

Abstract: A flat panel display device is provided which prevents color mixture of the phosphor surface thereof to promote high brightness and longer operation life. The flat panel display device is configured such that a front substrate 2 provided with the phosphor surface and a back substrate 1 provided with electron sources 10 arranged in a matrix manner are arranged to be opposed to each other via a support frame 3 and both the substrates 1, 2 and the support frame 3 are hermetically sealed. The electron source 10 has a triangular surface which faces the front substrate 2.

Abstract: A structure is provided which facilitates manufacturing of a flat type image display element which includes electrodes capable of enhancing the display efficiency with an extremely small control electrode current using a cathode material which can obtain a sufficient intensity of electron emission in a low electric field. A structure is provided in which control electrodes and cathodes are formed substantially on a the plane on a first panel, while control electrode lines which electrically connect the control electrodes of a plurality of pixels are not included in the plane which is parallel to a phosphor screen panel and includes the cathodes and the control electrodes.

Abstract: An object of the invention is to prove a method of producing an electron-emitting device, in which metal content in an electron emission film can be relatively easily controlled and adhesiveness between electrodes and the like in contact with the electron emission film and the electron emission film is good. The method is a method of producing an electron-emitting device including a cathode electrode and a metal-containing electron emission film located above the cathode electrode. The method includes a first step (A) of preparing an electroconductive first layer for the cathode, a second layer for the electron emission film located above the first layer, and a third layer for a metal-containing electron beam focusing electrode in contact with the second layer and a second step (B) of diffusing the metal from the third layer into the second layer.

Abstract: Diamond microtip field emitters are used in triode vacuum microelectronic devices, sensors and displays. Diamond triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.

Abstract: In one aspect, a microelectrode comprising an upper surface, two walls, and a polymer core is described, wherein each of the two walls forms an angle with a lower surface, and the upper surface and each of the two walls comprises a metal thin film in contact with the polymer core. The lower surface, however, lacks a continuous metal thin film. In another aspect, a microelectrode comprising a metal thin film is described in which the metal thin film has a thickness and a plane bisects the thickness. The plane forms an angle with a lower surface that lacks a contiuous metal thin film. The metal thin film is in contact with a supporting polymer having an upper surface that also lacks a continuous metal thin film.

Abstract: Disclosed is an emitter composition of a field emission cell that is printed on a cathode substrate of a display to be applied to an electron emission source, including a carbon nanotube, a binder, glass frit, a dispersing agent and an organic solvent, characterized by further having 0.1–20 w % of diamond. Further, a manufacturing method of the emitter composition and a field emission cell using the emitter composition are also provided. In the current invention, since the field emission cell has the carbon nanotube and the diamond distributed simultaneously therein, it has a relatively high current density even at the same driving voltage, thereby improving emitting properties. In addition, the field emission cell is advantageous in terms of superior printability and stable field emission, while reducing various expenses required to operate and repair constitutive parts thereof.

Abstract: An electron emission device can include gate electrodes formed on a substrate and cathode electrodes insulated from the gate electrodes with an insulating layer interposed between them. Each cathode electrode can have a receptor at a peripheral side. Electron emission regions may be formed within the receptors and in contact with the cathode electrodes. Counter electrodes can face the cathode electrodes, can be coplanar with the cathode electrodes, and can be coupled to the gate electrodes. The shortest distance between the electron emission region and the counter electrode may be smaller than the shortest distance between the cathode electrode and the counter electrode.

Abstract: A self-aligned gated field emission device and an associated method of fabrication are described. The device includes a substrate and a porous layer disposed adjacent to the surface of the substrate, wherein the porous layer defines a plurality of substantially cylindrical channels, each of the plurality of substantially cylindrical channels aligned substantially parallel to one another and substantially perpendicular to the surface of the substrate. The device also includes a plurality of substantially rod-shaped structures disposed within at least a portion of the plurality of substantially cylindrical channels defined by the porous layer and adjacent to the surface of the substrate, wherein a portion of each of the plurality of substantially rod-shaped structures protrudes above the surface of the porous layer.