Abstract: A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.

Abstract: An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm2, the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm2.

Abstract: A porous cathode structure is fabricated from a plurality of wires which are placed in proximity to each other in elevated temperature and pressure for a sintering time. The sintering process produces the porous cathode structure which may be divided into a plurality of individual porous cathodes, one of which may be placed into a dispenser cathode support which includes a cavity for containing a work function reduction material such as BaO, CaO, and Al2O3. The work function reduction material migrates through the pores of the porous cathode from a work replenishment surface adjacent to the cavity of the dispenser cathode support to an emitting cathode surface, thereby providing a dispenser cathode which has a uniform work function and therefore a uniform electron emission.

Abstract: A device which employs an electron beam, for performing a desired function, includes an electron gun for generating the electron beam. The electron gun includes a barrel shaped rotatable structure having a plurality of annularly disposed electron sources. A curvature of a surface portion of the rotatable structure is shaped to optimize electric field concentrations. The rotatable structure further includes end portion protrusions.

Abstract: An electronic device is presented which is configured to operate as at least one logic gate. The device comprises an electrodes arrangement of one or more basic units, the basic unit being configured to define at least one vacuum space for free charged particles' propagation and comprising an input assembly for supplying an input signal, and a floating electrode assembly accommodated proximal said input assembly and serving for reading an output signal therefrom, the floating electrode arrangement being configured to define at least one source of the free charged particles and at least one target toward which the charged particles are directed and is chargeable and dischargeable in response to the input signal thereby creating the output of the basic unit.

Abstract: Disclosed are a vacuum channel transistor including a planar cathode layer formed of a material having a low work function or a planar cathode layer including a heat resistant layer formed of a material having a low work function, and a manufacturing method of the same. In the vacuum channel transistor, electrons can be emitted even when a low voltage is applied to a gate layer, a voltage of an anode layer has a small influence on electron emission of a cathode layer, and instability of emission current is obviated. Accordingly, high efficiency and a long lifespan can be achieved, and thus operational stability is secured.

Abstract: A field emission device (8) includes a cathode (80), an anode (84), and spacers (83) interposed therebetween. The cathode includes a network base (81) and a plurality of field emitters (82) formed thereon. The network base is formed of a plurality of electrically conductive carriers. The field emitters are located on surfaces of the carriers, respectively. The field emitters extend radially outwardly from the corresponding conductive carriers. The plurality of electrically conductive carriers may be made of electrically conductive fibers, for example, metal fibers, carbon fibers, organic fibers or another suitable fibrous material. Carrier portions of the plurality of electrically conductive carriers may be cylindrical, curved/arcuate, or at least approximately curved in shape.

Abstract: A field emission display device and a method of fabricating the same are provided. The field emission display device may include a substrate, a transparent cathode layer, an insulation layer, a gate electrode, a resistance layer, and carbon nanotubes. The transparent cathode layer is deposited on the substrate. The insulation layer is formed on the cathode layer and has a well exposing the cathode layer. The gate electrode is formed on the insulation layer and has an opening corresponding to the well. The resistance layer is formed to surround the surface of the gate electrode and the inner walls of the opening and the well so as to block ultraviolet rays. The carbon nanotube field emitting source is positioned on the exposed cathode layer.

Abstract: A field emission device comprises a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter for extracting electron beams from the CNT emitter and focusing the extracted electron beams onto a given position. The gate stack includes a mask layer covering the emitter electrode and provided around the CNT emitter, a gate insulating layer formed on the mask layer to a predetermined height, a mirror electrode formed on an inclined plane of the gate insulating layer, a gate electrode formed on the gate insulating layer and spaced apart from the mirror electrode, and a focus gate insulating layer and a focus gate electrode sequentially formed on the gate electrode. The field emission device is manufactured and employed in a display device in accordance with the present invention.

Abstract: An emission device is provided for extracting electrons onto an anode of a visual display. The emission device (10) includes a conductivity limited material (18) positioned between first and second electrodes (14, 16) and having a surface (26). A plurality of catalytic nanoparticles (22) are distributed throughout the conductivity limited material (18), wherein some of the catalytic particles (22) are contiguous to the surface (26). A plurality of nanostructures (24), such as carbon nanotubes, are grown from the catalytic nanoparticles (22) contiguous to the surface (26). A voltage is applied across the conductivity limited material (18) having a plurality of catalytic particles (22) embedded therein, thereby causing the electrons to tunnel between the catalytic particles (22).

Abstract: According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention, a process for manufacturing a FED is provided comprising the steps of forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to an emission surface of the emitter.

Abstract: A light source (100) provided herein generally includes a substrate (110), a cathode (120), an isolating layer (122), a light-permeable anode (152), and at least one fluorescent layer (154). The substrate has a surface, and the cathode, with at least one solid electron emitter formed thereon, is located on the surface of the substrate. The isolating layer is formed on the cathode. The light-permeable anode faces the field emitters and is spaced from the cathode to form a vacuum chamber. The at least one fluorescent layer is formed on the anode. Such a light source can then be incorporated, e.g., into a backlight module (300) for an LCD device.

Abstract: By making a cathode substrate function as a cathode and applying a voltage to the cathode and an anode, an electron emission element emits an electron from an electron source provided on the cathode substrate, and irradiates the electron onto an electron irradiation surface formed on the anode surface. The electron source is thread-type and provided on the cathode substrate. A deflecting voltage generates the electric field around the electron source. The electron source including a charge receives a power from the generated electric field to curve. Therefore, an irradiation position of the electron moves on the electron irradiation surface. Since it becomes unnecessary to move the electron irradiation surface and the electron source, a configuration of the electron emission element or an apparatus including the electron emission element is not complicated, and can be miniaturized and simple.

Abstract: A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

Abstract: Provided are a carbon nanotube in which a Full-Width at Half-Maximum of X-ray diffraction is 0.6 or less, an electron emission source including the carbon nanotube, and an electron emission device including the electron emission source.

Abstract: An electron source include a first cathode electrode disposed over a substrate and terminated to provide electrons; an emitter layer disposed over the cathode electrode and formed from one or plurality vertically aligned and mono-dispersed nano-structures that are truncated to the same length, embedded in a solid matrix and protruding above the surface for emitting electrons; an insulator disposed over the emitter layer and having one or plurality of apertures, each is self-aligned with and exposes one nano-structure in the emitter layer; and a second gate electrode disposed over the insulator, having one or plurality of apertures self-aligned with the apertures in the insulator and terminated to extract electrons from the exposed nano-structures through the apertures. The gate aperture is substantially less than one micrometer and the gated nano-structures can have a density on the order of 108/cm2.

Abstract: A flat lamp device includes lower and upper glass plates facing each other in parallel; spacers interposed between the plates to keep a distance therebetween; a cathode electrode singly formed over the entire upper surface of the lower glass plate; an insulation film formed on the cathode electrode; semiconductor films independently patterned on the insulation at intervals; a catalyst metal layer laminated on a buffer metal layer to improve adhesive force of the catalyst metal formed on the semiconductor films; carbon nano-tubes formed on the catalyst metal layer; a grid electrode installed above the carbon nano-tubes between the plates to guide electron emission from the carbon nano-tubes with a mesh shape having an opening for passage of the emitted electrons; an anode electrode formed below the upper glass plate to accelerate the emitted electrons; and a fluorescent layer formed on a lower surface of the anode electrode.

Abstract: An electron gun, an electron source for an electron gun, an extractor for an electron gun, and a respective method for producing the electron gun, the electron source and the extractor are disclosed. Embodiments provide an electron source utilizing a carbon nanotube (CNT) bonded to a substrate for increased stability, reliability, and durability. An extractor with an aperture in a conductive material is used to extract electrons from the electron source, where the aperture may substantially align with the CNT of the electron source when the extractor and electron source are mated to form the electron gun. The electron source and extractor may have alignment features for aligning the electron source and the extractor, thereby bringing the aperture and CNT into substantial alignment when assembled. The alignment features may provide and maintain this alignment during operation to improve the field emission characteristics and overall system stability of the electron gun.

Abstract: An apparatus for focusing electrons being emitted from a field emission device comprises a cathode metal layer (20,44,52) formed over a first portion of a substrate (12,41,51) to partially define a sidewall (23) for a trench (25) in a second portion of the substrate. A ballast layer (22,46,53) is formed over the second portion, the cathode metal layer (20,44,52), and the sidewall (23). A first dielectric layer (24,47,54) is formed over the ballast layer (22,46,53) in the first portion and a gate extraction metal layer (26,48,55) is formed thereover. At least one emitter (30) is formed above the substrate and in the trench (25) having the sidewall (23) defined by the first dielectric layer (24,47,54) and the cathode metal layer (20,44,52). The ballast layer (22,46,53) extends along the sidewall and conductively contacts the cathode metal layer and the at least one emitter and provides a force that counteracts the sidewise pull of the gate extraction metal layer (26,48,55).

Abstract: The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

Abstract: A flat-type display device is provided. The flat-type panel display includes a cathode panel having a plurality of electron emitter areas formed on a support; and an anode panel having formed on a substrate a plurality of fluorescent regions and an anode electrode covering at least the fluorescent regions, in which the cathode panel and the anode panel are joined together at their edges with a joint member in between. In the display device, the anode panel has formed on the anode electrode an electron absorbing layer for absorbing electrons from any one of the fluorescent regions and the anode electrode or both, and the anode panel has an adhesion improving layer formed between the anode electrode and the electron absorbing layer.

Abstract: An electron emission device having various functional electrodes in addition to the electrodes serving to emit electrons includes: first and second substrates facing each other, and cathode and gate electrodes arranged on the first substrate within an effective electron emission area and including an insulating layer interposed therebetween. The electron emission regions are electrically connected to the cathode electrodes. At least one dummy electrode is arranged external to the effective electron emission area. At least one anode electrode is arranged on the second substrate. Phosphor layers are arranged on one surface of the anode electrode.

Abstract: A field emission device and a field emission display (FED) having dual cathode electrodes. The field emission device includes a substrate; a first cathode electrode formed on the substrate; a cathode insulating layer formed on the first cathode electrode, and having a first cavity that exposes a portion of the first cathode electrode; an electron emission source disposed on the first cathode electrode and being exposed by the first cavity; a second cathode electrode formed on the cathode insulating layer, and including a cathode hole aligned with the first cavity; a gate insulating layer formed on the second cathode electrode, and having a second cavity aligned with the first cavity; and a gate electrode formed on the gate insulating layer, and having a gate hole aligned with the second cavity.

Abstract: A field emission device having cold cathode devices including an emitter and a lead electrode, and the field emission device is provided with the plural kinds of cold cathode device groups classified based on the emission property of the cold cathode device. This field emission device has a member for allowing the cold cathode device group to perform emission by successively changing the cold cathode device group that mainly performs emission based on the difference in the emission property. Thus, it is possible to maintain the emission current at a predetermined necessary value or more and to realize the long lifetime of the field emission device.

Abstract: A field emission lamp includes: a transparent bulb (10) having a neck portion; a lamp head mated with the neck portion; an anode layer (20) formed on an inner surface of the bulb; a fluorescence layer (30) formed on the anode layer; a cathode electrode (43) and an anode electrode (23) located at the lamp head; an anode down-lead ring (24) located at the neck portion, the anode down-lead ring engaging with the anode layer and electrically connecting with the anode electrode via an anode down-lead pole (21) and a pair of down-leads (22); and an electron emitting cathode positioned in the bulb and engaging with the cathode electrode. The field emission lamp is safe for humans and environmentally friendly, provides a high electrical energy utilization ratio, and has a reduced cost.

Abstract: A field emission type planar lamp with stacked structure and method for the same are proposed. The field emission type planar lamp includes an anode plate, a cathode plate and a panel. The anode plate includes a anode substrate. The cathode plate is stacked with the anode plate and includes an isolation mesh with a plurality of apertures and a cathode mesh with a plurality of through holes. The through holes are corresponding to the apertures. The panel is sealed with t he anode substrate to form a vacuum cavity to enclose the anode unit and the cathode plate. Electron beams generated by the cathode plate bombard the anode plate to illuminate. The illumination will exit from one side of the panel through passage defined by the aperture and the through, besides exit from one side of the anode substrate. Therefore, the field emission type planar lamp has two-side illumination.

Abstract: An electron emission device includes: a substrate; first and second electrodes insulated from each other and arranged on the substrate and having predetermined shapes; an electron emission region arranged on the substrate; and a first passivation layer entirely covering at least one of the first and second electrodes and exposing at least a portion of the electron emission region. An electron emission display includes: first and second substrates opposed to each other; first and second electrodes insulated from each other and arranged transversely to each other on the first substrate and having predetermined shapes; an electron emission region arranged on the substrate; a first passivation layer entirely covering at least one of the first and second electrodes and exposing at least a portion of the electron emission region; and an image display substrate having an anode electrode and a fluorescent layer arranged on the second substrate.

Abstract: The present invention provides an array-like flat lighting source, which has an array of field emitter elements. The structure of the array of field emitter elements includes a substrate and a plurality of field emitter elements. The substrate has a plurality of grooves formed thereon and each of the field emitter elements is disposed in one of the grooves. The present field emission lighting source is spacer free, and its upper and lower substrates can be made of a same material to facilitate the maintenance of the vacuum. The array of field emitter elements can have an auxiliary conductive line for repair to guarantee normal operation of the light source if one of electrode lines becomes open.

Abstract: An electron emission device and an electron emission display, in which a driving electrode is protected from being damaged when an overcurrent instantly flows therein. The electron emission device includes a first driving electrode disposed on a plate, a second driving electrode disposed on the plate and insulated from the first driving electrode, and an electron emission portion connected to the first driving electrode. The electron emission portion emits electrons in response to a voltage difference between the first driving electrode and the second driving electrode. The second driving electrode has at least two separate portions, and the at least two separate portions are coupled to each other by at least one band having a predetermined width adapted to electrically isolate at least one portion of the second driving electrode from the electron emission portion when an overcurrent is applied between the second driving electrode and the electron emission portion.

Abstract: A method for production includes a step for forming concave molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concave molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si(111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.

Abstract: A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

Abstract: A carbon nanotube-based field emission device in accordance with the invention includes: a cathode electrode (50), a carbon nanotube array (40) formed perpendicularly on the cathode electrode, a barrier (20) and a gate electrode (60). The carbon nanotube array has a growth end (42) electrically contacting with the cathode electrode, and an opposite root end (44) for emitting electrons therefrom. The root end of the carbon nanotube array defines a substantially planar surface having a flatness of less than 1 micron.

Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

Abstract: The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

Abstract: To obtain a paste for electron sources which can enhance heat resistance of carbon nanotubes, which can suppress burn-out of the carbon nanotubes even during heating at a high temperature, and can exhibit a high electron emission performance, boron (B) is added to the paste formed of the carbon nanotubes and metal. Due to the addition of boron, the oxidation of the carbon nanotubes can be suppressed, and the degradation of the electron emission characteristics and the degradation of the uniformity of the emission of electrons during the heating process such as baking can be prevented.

Abstract: A field emission device having improved properties and which finds use in display devices, such as a flat panel displays. Known devices and displays suffer from problems such as complexity of fabrication and limited color gamut. The present device provides a field emission backplate which is made from a substantially semiconductor based material and has a plurality of grown tips. The device also includes at least one electro-luminescent or photo-luminescent material having a fluorescent material such as a fluorescent dye doped material chemically attached thereto.

Abstract: A lighting device includes a cathode (11), a cover (12), an insulation layer (13), an emitter base (18), a molybdenum tip (19), a phosphor layer (15), an anode (16), and a silicon oxide layer (17). The cover is formed on the cathode. The insulation layer is formed on the cover. The base is formed on the insulation layer. The molybdenum tip is formed on the base. The phosphor layer is spaced apart from the molybdenum tip. The anode is formed on the phosphor layer. The silicon oxide layer is formed on the anode.

Abstract: An electrode for an electron gun and an electron gun using same are provided which make use of stable carbon material having small work function and which permit orientation control to be achieved and which can be manufactured at a low cost. An electrode for an electron gun uses carbon electrode(s) formed from amorphous carbon and carbon nanotubes or carbon nanofibers and molded in linear shape. The carbon electrode is obtained by mixing a resin composition such as chlorinated vinyl chloride resin, furan resin, etc., which forms non-graphitizing carbon after carbonizing, with a carbon powder such as carbon nanotubes or carbon nanofibers and, after extrusion, molding and carbonizing the molding obtained.

Abstract: This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

Abstract: To provide an electron-emitting device, an electron source, an image-forming apparatus, and a method for manufacturing the electron-emitting device whereby it is possible to reduce a device capacity and a driving voltage, to improve the efficiency of emitting electrons, and to obtain high-resolution beam. The extracting electrode and the cathode electrode are provided on an insulating substrate, a layer having growth selectivity of fibrous carbon is formed on the cathode electrode, and the fibrous carbon is grown via catalyst particles formed on the layer.

Abstract: The invention provides an electron beam device 1 comprising at least one field emission cathode 3 and at least one extracting electrode 5, whereby the field emission cathode 5 comprises a p-type semiconductor region 7 connected to an emitter tip 9 made of a semiconductor material, an n-type semiconductor region 11 forming a pn-diode junction 13 with the p-type semiconductor region 7 a first electric contact 15 on the p-type semiconductor region 7 and a second electric contact 17 on the n-type semiconductor region 11. The p-type semiconductor region 7 prevents the flux of free electrons to the emitter unless electrons are injected into the p-type semiconductor region 7 by the pn-diode junction 13. This way, the field emission cathode 3 can generate an electron beam where the electron beam current is controlled by the forward biasing second voltage V2 across the pn-diode junction. Such electron beam current has an improved current value stability.

Abstract: An active matrix display that does not require a transistor or similar current switching device at each pixel. Instead, the display employs in each pixel a temperature-controlled current source that provides to the field emitters of the pixel an amount of electrical current which varies in response to the temperature of a temperature sensor. Each pixel further includes a thermoelectric heat transfer circuit which transfers heat to or from the sensor in an amount which varies in response to the video signal. Consequently, the video signal controls the temperature of the sensor within a pixel's temperature-controlled current source, which controls the current flow through the pixel's field emitters.

Abstract: A microelectromechanical microwave vacuum tube device is disclosed. The device consists of a cathode formed on a substrate, the cathode comprising electron emitters. A cathode emission control grid is also attached to the device substrate. The device further includes an output structure where amplified microwave power is removed from the device. In the device, the cathode surface and the grid surface are substantially parallel to each other and substantially perpendicular to the substrate. One of either the cathode, the grid, or both the cathode and the grid, are attached to the device substrate by one or more flexural members. The device further comprises an anode that is substantially parallel to the cathode surface and the grid surface.

Abstract: Disclosed is an emitter composition of a field emission cell that is printed on a cathode substrate of a display to be applied to an electron emission source, including a carbon nanotube, a binder, glass frit, a dispersing agent and an organic solvent, characterized by further having 0.1–20 w % of diamond. Further, a manufacturing method of the emitter composition and a field emission cell using the emitter composition are also provided. In the current invention, since the field emission cell has the carbon nanotube and the diamond distributed simultaneously therein, it has a relatively high current density even at the same driving voltage, thereby improving emitting properties. In addition, the field emission cell is advantageous in terms of superior printability and stable field emission, while reducing various expenses required to operate and repair constitutive parts thereof.

Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

Abstract: A field emission illumination device includes a sealed tubular body, an anode layer, a fluorescence layer and an electron emitting cathode electrode. The sealed tubular body has a light-permeable portion and the anode is formed on an inner surface of the light-permeable portion of the tubular body. The fluorescence layer is formed on the anode layer. The electron emitting cathode is positioned in the tubular body and includes at least one carbon nanotube yarn. In the illuminating process the energy in the field emission illumination device only undergoes transformation from electric energy to luminous energy, so the efficiency of the energy transformation is increased.

Abstract: The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.

Abstract: A field emission type backlight device can include upper and lower substrates facing each other with a gap between them, an anode electrode on a lower side of the upper substrate, a fluorescent layer on a lower side of the anode electrode, a lower gate electrode on an upper side of the lower substrate, an insulating layer on an upper side of the lower gate electrode, a cathode electrode on an upper side of the insulating layer, and a gate electrode that is provided on an upper side of the insulating layer and electrically connected to the lower gate electrode.

Abstract: An image-forming device having, in an envelope, an electron-emitting element, an image-forming member for forming an image by irradiation of an electron beam emitted from the electron-emitting element, and an electroconductive supporting member for supporting the envelope. The potential of the supporting member is controlled to not be higher than the maximum potential applied to the electron-emitting element. The electron-emitting element and the image-forming member can be placed in juxtaposition on the same substrate, an electro-conductive substrate can be additionally provided in opposition to the face of the substrate, and the supporting member can be connected electrically to one of the electrodes and also to the electro-conductive substrate.

Abstract: A display device consisting of an electron-emitting device which is a laminate of an insulating layer and a pair of opposing electrodes formed on a planar substrate. A portion of the insulating layer is between the electrodes and a portion containing an electron emitting region in between one electrode and the substrate. Electrons are emitted from the electron emission region by a voltage to the electrodes, thereby stimulating a phosphorous to emitting light.