Point Source Cathodes Patents (Class 313/336)
  • Patent number: 7221087
    Abstract: A field emission display includes: a cathode electrode (17); an anode electrode (20); a gate electrode (19) arranged between the cathode electrode and the anode electrode; a carbon nanotube array (15) electrically connected to the cathode electrode at a first end; and a spacer (14) insulatively separating the gate electrode from the cathode electrode. A second opposite end of the carbon nanotube array is flush with a top end of the spacer. An intermediate layer (11) having a precisely controllable thickness is arranged between the gate electrode and the spacer. The distance between the gate electrode and the carbon nanotube array is mainly controlled by the thickness of the intermediate layer.
    Type: Grant
    Filed: March 26, 2004
    Date of Patent: May 22, 2007
    Assignees: Tsinghua University, Hon Hai Precision Ind. Co., Ltd.
    Inventors: Liang Liu, Shoushan Fan
  • Patent number: 7220159
    Abstract: A method and a structure for a converging-type electron-emission source of a field-emission display are disclosed. A substrate is provided, and a silver paste is used to form a first electrode layer on the substrate by the process such as thick-film photolithography or screen-printing. A carbon nanotube is formed on the first electrode layer by thick-film photolithography or screen-printing, and a second electrode is formed on the carbon nanotube. A third electrode layer is formed on the first electrode layer around the second electrode layer by thick-film photolithography or screen-printing. The third electrode layer is higher than the second electrode layer, such that a converging exit is formed around the second electrode layer. A sintering step is performed. When the electron beam is generated, the electron beam is concentrated at the center of the converging exit to impinge a phosphor layer of an anode without causing gamut.
    Type: Grant
    Filed: September 3, 2004
    Date of Patent: May 22, 2007
    Assignee: TECO Nanotech Co., Ltd.
    Inventors: Chun-Yen Hsiao, Frank Yang, Kuei-Wen Cheng
  • Patent number: 7215072
    Abstract: A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.
    Type: Grant
    Filed: March 23, 2004
    Date of Patent: May 8, 2007
    Assignees: Matsushita Electric Industrial Co., Ltd., National Institute of Advanced Industrial Science and Technology
    Inventors: Keisuke Koga, Makoto Yamamoto, Akinori Shiota, Seigo Kanemaru, Masayoshi Nagao
  • Patent number: 7202596
    Abstract: An electron emitter is formed by in situ growth from the vapor on catalyst clusters that are adhered by an adhesion layer to a conductive electrode. The emitter comprises hemispheroidal nanofiber clusters that emit electrons at low field strengths and high current densities, producing bright light by the interaction of the electrons and a fluorescent and/or phosphorescent film on an anode spaced across an evacuated gap. The nanofibers may be grown such that the nanofiber clusters are entangled, restricting movement of individual nanofibers.
    Type: Grant
    Filed: January 9, 2004
    Date of Patent: April 10, 2007
    Assignee: Electrovac AG
    Inventors: Xinhe Tang, Ernst Hammel
  • Patent number: 7193357
    Abstract: A field emission backlight device may include a first substrate and a second substrate separate from and roughly parallel to each other, a first anode electrode and a second anode electrode that face each other on inner surfaces of the first substrate and the second substrate, and cathode electrodes separate from and roughly parallel to one another between the first substrate and the second substrate. It may also include electron emission sources disposed on the cathode electrodes to emit electrons by an electric field and a phosphorous layer disposed on the first anode electrode or the second anode electrode.
    Type: Grant
    Filed: February 11, 2005
    Date of Patent: March 20, 2007
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jun hee Choi, Byong-gwon Song, Moon-jin Shin, Andrei Zoulkarneev, Deuk-seok Chung, Min-jong Bae
  • Patent number: 7176610
    Abstract: An improved thermionic cathode is provided. The cathode has a carbon-coated cone surface and reduced cone angle (e.g. typically 60 degrees or less) that delivers an electron beam with high angular intensity and brightness and exhibits increased longevity.
    Type: Grant
    Filed: February 10, 2004
    Date of Patent: February 13, 2007
    Assignee: Toshiba Machine America, Inc.
    Inventor: Victor Katsap
  • Patent number: 7175495
    Abstract: A method of manufacturing a field emission device having emitter shapes, comprise the steps of forming a first original plate having a major surface provided with emitter shapes, by cutting a surface portion of a base material, forming a first material layer on the major surface of the first original plate on which the emitter shapes are provided; separating the first material layer from the first original plate, thereby obtaining a second original plate having recesses onto which the emitter shapes on the first original plate are transferred, forming a second material layer on a major surface of the second original plate on which the recesses are provided; and separating the second material layer from the second original plate, thereby to obtain a substrate having projections portions onto which shapes of the recesses of the second original plate are transferred.
    Type: Grant
    Filed: February 27, 2003
    Date of Patent: February 13, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masayuki Nakamoto, Atsuo Inoue
  • Patent number: 7157848
    Abstract: A field emission device for use as a backlight of a liquid crystal display comprises a conductive anode having a light-emitting layer and a cathode separated from the anode by a spacer. The cathode comprises nanofiber electron emitters. For example, the nanofiber electron emitters comprise a substrate, a conductive film adhered to the substrate and a plurality of isolated, hemispheroidal nanofiber clusters that are capable of emitting electrons at high current density and low field strength.
    Type: Grant
    Filed: January 9, 2004
    Date of Patent: January 2, 2007
    Assignee: Electrovac Fabrikation Elektrotechnischer Spezialartikel GmbH
    Inventors: Xinhe Tang, Ernst Hammel, Daniel Den Engelsen, Edward Cosman, Cornelis Kortekaas
  • Patent number: 7156715
    Abstract: A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.
    Type: Grant
    Filed: April 19, 2005
    Date of Patent: January 2, 2007
    Assignee: Industrial Technology Research Institute
    Inventors: Chun-Tao Lee, Cheng-Chung Lee, Jyh-Rong Sheu, Yu-Yang Chang, Jia-Chong Ho, Yu-Wu Wang
  • Patent number: 7144287
    Abstract: Systems and methods are described for individually electrically addressable carbon nanofibers on insulating substrates. A method includes forming an electrically conductive interconnect on at least a part of an insulating surface on a substrate; and growing at least one fiber that is coupled to the electrically conductive interconnect.
    Type: Grant
    Filed: November 7, 2005
    Date of Patent: December 5, 2006
    Assignee: UT-Battelle, LLC
    Inventors: Michael A. Guillorn, Timothy Eric McKnight, Vladimir I. Merkulov, Anatoli Vasilievich Melechko, Michael Leon Simpson
  • Patent number: 7135823
    Abstract: An image forming apparatus comprising: a cathode; a gate; an anode; an electron emitting element arranged on the cathode; an image forming member that is arranged opposite to the electron emitting element; a deflection electrode that deflects the orbit of the electron emitted from the electron emitting element and headed toward the anode; and a driver, wherein assuming that an electric field required to start electron emission from the electron emitting element is Ee, that an electric field applied to the electron emitting element by applying voltage to the anode is Ea and that an electric field applied to the electron emitting element by applying voltage to the gate is Eg, the driver applies voltages to the cathode, the gate, and the anode in such a way that (i) Ea>Ee or (ii) Ea+Eg>Ee and Ea>Eg is satisfied.
    Type: Grant
    Filed: October 1, 2004
    Date of Patent: November 14, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Noritake Suzuki, Shigeki Yabu
  • Patent number: 7129631
    Abstract: A flat panel field emission device includes a black matrix formed from an electrically insulative material such as praseodymium-manganese oxide. The insulative black matrix increases image contrast and reduces power consumption. For field emission devices which utilize a switched anode for selectively activating pixels, the insulative material reduces or eliminates problems associated with short circuiting of the pixels.
    Type: Grant
    Filed: September 7, 2004
    Date of Patent: October 31, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Robert T. Rasmussen
  • Patent number: 7129626
    Abstract: A pixel structure and an edge-emitter field-emission display device having a first substrate or backplate including a cathode disposed thereon and a second substrate or faceplate including an anode disposed thereon, wherein the anode on the second substrate or faceplate has a light emitting film. The cathode may define a first bus of an X-Y bus array and the anode may define a second bus of the X-Y bus array. Alternatively, the first substrate may further include a control gate disposed thereon, wherein the cathode defines a first bus of an X-Y bus array and the control gate defines a second bus of the X-Y bus array.
    Type: Grant
    Filed: March 20, 2002
    Date of Patent: October 31, 2006
    Assignee: Copytele, Inc.
    Inventors: Alexander Kastalsky, Sergey Shokhor, Frank J. DiSanto, Denis A. Krusos, Boris Gorfinkel, Nikolai Abanshin
  • Patent number: 7109515
    Abstract: Systems and methods are described for carbon containing tips with cylindrically symmetrical carbon containing expanded bases. A method includes producing an expanded based carbon containing tip including: fabricating a carbon containing expanded base on a substrate; and then fabricating a carbon containing fiber on the expanded base. An apparatus includes a carbon containing expanded base coupled to a substrate; and a carbon containing extension coupled to said carbon containing expanded base. The carbon containing expanded base is substantially cylindrically symmetrical and said carbon containing extension is substantially cylindrically symmetrical.
    Type: Grant
    Filed: November 17, 2003
    Date of Patent: September 19, 2006
    Assignee: UT-Battelle LLC
    Inventors: Vladimir I. Merkulov, Douglas H. Lowndes, Michael A. Guillorn, Michael L. Simpson
  • Patent number: 7105992
    Abstract: An FED and a method of manufacture are provided. The FED includes a cathode assembly containing an improved column line structure. The column line structure includes a conductive structure formed on a substrate. A resistive layer is formed on the conductive structure, and an insulator layer is formed partly over the resistive layer. The contact between the base of the emitter tips and the addressing column line is achieved through a lateral side that is not covered by the insulator layer. The insulator layer helps reduce the possibility of electrical shorting between the addressing column line and the row line structure of the cathode assembly. The insulator layer on top of the addressing column line will allow the use of a thinner subsequent dielectric layer. This thinner dielectric layer, which supports the grid, will provide a lower RC time constant and help achieve better video rate operation. The thinner dielectric layer also will result in smaller grid openings above the tips.
    Type: Grant
    Filed: September 19, 2003
    Date of Patent: September 12, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Ammar Derraa
  • Patent number: 7105997
    Abstract: Structures and methods to ease electron emission and limit outgassing so as to inhibit degradation to the electron beam of a field emitter device are described. In one method to ease such electron emission, a layer of low relative dielectric constant material is formed under the surface of the field emitter tip. Another method is to coat the field emitter tip with a low relative dielectric constant substance or compound to form a layer and then cover that layer with a thin layer of the material of the field emitter tip.
    Type: Grant
    Filed: August 31, 1999
    Date of Patent: September 12, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Yongjun Hu
  • Patent number: 7102279
    Abstract: An FED has a cathode, an anode and an insulating supporting device. The cathode has a plurality of cathode electron emitter layers and a cathode substrate. The cathode has a plurality of cathode ribs disposed on the cathode substrate, and the cathode ribs are used for laterally separating any respective two cathode ribs. The anode has a phosphors layer and an anode substrate. The insulating supporting device is arranged between the cathode ribs and the anode, and has a reflection layer facing the anode and a gate made of a conductive material and disposed above the cathode ribs. The reflection layer is capable of reflecting light emitted from the phosphors layer.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: September 5, 2006
    Assignee: Teco Nanotech Co., Ltd.
    Inventors: Kuei-Wen Cheng, Shie-Heng Lee
  • Patent number: 7091654
    Abstract: A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.
    Type: Grant
    Filed: August 27, 2001
    Date of Patent: August 15, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Guy T. Blalock, Sanh D. Tang, Zhaohui Huang
  • Patent number: 7081703
    Abstract: A tetraode field-emission display and a method of fabricating the same are disclosed. A mesh is disposed between an anode plate and a cathode plate. The mesh has a gate layer and a converging electrode layer separated by an insulation layer to form a sandwich structure. The mesh has a plurality of apertures in correspondence with each set of anode and cathode. A glass plate is placed between the mesh and the anode to serve as a spacer. The converging electrode layer is facing the anode plate, such that the divergent range of an electron beam emitted by an electron emission source can be restricted. Thereby, the electron beam can impinge the corresponding anode more precisely.
    Type: Grant
    Filed: April 20, 2004
    Date of Patent: July 25, 2006
    Assignee: Teco Nanotech Co., Ltd.
    Inventors: Kuo-Rong Chen, Jin-Shou Fang, Kuei-Wen Cheng
  • Patent number: 7078863
    Abstract: A cold-cathode electron source having an improved utilization efficiency of an electron beam and a simple structure. The cold-cathode electron source comprises a gate electrode (4) provided on a substrate (2) through an insulating layer (3) and an emitter (6) extending through the insulating layer (3) and the gate electrode (4) and disposed in an opening of the gate. During the emission of electrons from the emitter (6), the following relationships are satisfied: 10 [V/?m]?(Va?Vg)/(Ha?Hg)?Vg/Hg; and Vg/Hg [V/?m]?Va×10?4×(9.7?1.3×1n(Hg))×(1000/Ha)0.5, where Ha [?m] is an anode-emitter distance, Va [V] is an anode-emitter voltage, Hg [?m] is a gate-emitter distance, and Vg [V] is a gate-emitter voltage.
    Type: Grant
    Filed: September 27, 2001
    Date of Patent: July 18, 2006
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tetsuya Ide, Junichi Sawahata, Masao Urayama
  • Patent number: 7078855
    Abstract: A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substantially uniform across the emitter surface.
    Type: Grant
    Filed: January 12, 2005
    Date of Patent: July 18, 2006
    Inventors: Zhizhang Chen, Sriram Ramamoorthi, Terry E McMahon, Timothy F. Myers
  • Patent number: 7075223
    Abstract: In an electron beam apparatus including an electron source and an electron beam irradiation member, a potential specifying plate including openings through which an electron transmits is provided between the electron source and the electron beam irradiation member. A spacer is located between the electron beam irradiation member and the potential specifying plate. In the case where a distance between a region between one opening of the potential specifying plate near the spacer and the spacer and the electron beam irradiation member is D1 and a distance between a region between that opening and another opening not near the spacer and the electron beam irradiation member is given by D2, if D1<D2 is satisfied, a deviation of an orbit of an electron beam emitted from the electron source is suppressed, so that it is possible to produce a high quality image.
    Type: Grant
    Filed: October 15, 2003
    Date of Patent: July 11, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventor: Yoichi Ando
  • Patent number: 7064476
    Abstract: Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
    Type: Grant
    Filed: January 12, 2001
    Date of Patent: June 20, 2006
    Assignee: Micron Technology, Inc.
    Inventor: David A. Cathey
  • Patent number: 7064477
    Abstract: A low input power consumption, compact thermal field emitter is suitable for use in electron beam systems, particularly those systems that use an array of electron beams or a miniature electron beam system. The thermal field emitter design reduces heat loss by reducing heat transfer to the base. To achieve reduced loses the design incorporates the use of high electrical resistivity, low thermal conductivity materials for construction of the filament posts and the filaments. Such materials further reduce heat loss and reduce input current requirements. In one embodiment, the base includes counterbores that reduce the heat conduction path between the filament posts and the base, and moves the contact area further from the filament.
    Type: Grant
    Filed: August 2, 2004
    Date of Patent: June 20, 2006
    Assignee: FEI Company
    Inventors: Gerald G. Magera, Gregory A. Schwind, James B. McGinn, David S. Jun
  • Patent number: 7049739
    Abstract: A field emission device using carbon nanotubes (CNTs) is provided. The field emission device includes a cathode on which a plurality of CNT emitters are arranged, a gate insulating layer having a through hole through which electrons emitted from the CNT emitters pass, and a gate electrode which corresponds to the through hole of the gate insulating layer and has an enlongated gate hole that forms an electric field having different strengths in a first direction and in a second direction orthogonal to the first direction.
    Type: Grant
    Filed: December 10, 2003
    Date of Patent: May 23, 2006
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Yong-wan Jin, Jung-woo Kim, Jae-eun Jung, Young-jun Park
  • Patent number: 7030545
    Abstract: A field-emission cathode having an emitter provided with a substrate, an emitter electrode layer, an insulating layer, a gate electrode layer, the layers being formed on the substrate in this order, needlelike projections for electron emission provided on the emitter electrode layer in a gate opening from which the insulating layer and the gate electrode layer are removed and each grown from one point in a given direction, and different projections for electron emission formed on all or part of the projections. The projections of the emitter are made of metallic particles, and thereby the manufacturing cost is lowered.
    Type: Grant
    Filed: April 30, 2003
    Date of Patent: April 18, 2006
    Assignee: Fujitsu Limited
    Inventors: Kazunori Inoue, Keiichi Betsui, Tadashi Nakatani, Osamu Toyoda
  • Patent number: 7026750
    Abstract: An electron emission element of the present invention comprises a substrate, and a protrusion protruding from the substrate and including boron-doped diamond. The protrusion comprises a columnar body. And a tip portion of the protrusion comprises an acicular body sticking out therefrom. The distance r [cm] between a center axis and a side face in the columnar body and the boron concentration Nb [cm?3] in the diamond satisfy the relationship represented by the following formula (1): r > 10 4 Nb .
    Type: Grant
    Filed: September 22, 2003
    Date of Patent: April 11, 2006
    Assignees: Sumitomo Electric Industries, Ltd., Japan Fine Ceramics Center
    Inventors: Yoshiki Nishibayashi, Takahiro Imai, Yutaka Ando
  • Patent number: 7009331
    Abstract: A carbon nano-tube field emission display has a plurality of strip shaped gates, wherein the strip shaped gate of the triode structure is in place of the conventional hole shaped gate, and morecover, a plurality of cathode electrons are induced by the electric force from the side of the gate. Therefore, when the carbon nano-tube electron emission source emits electrons, which are controlled under the strip shaped gate, the diffusion direction of the electron beam is confined in the same direction. Consequently, controlling the image pixel and using the particular advantage of the triode-structure field emission display significantly improve the image uniformity and the luminous efficiency.
    Type: Grant
    Filed: December 2, 2003
    Date of Patent: March 7, 2006
    Assignee: Industrial Technology Research Institute
    Inventors: Jyh-Rong Sheu, Chun-Tao Lee, Shin-Chiuan Jiang, Yu-Yang Chang, Cheng-Chung Lee
  • Patent number: 7002287
    Abstract: A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing wells disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing wells disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing wells.
    Type: Grant
    Filed: July 28, 2000
    Date of Patent: February 21, 2006
    Assignees: Candescent Intellectual Property Services, Inc., Candescent Technologies Corporation
    Inventors: Bob L. Mackey, Duan A. Haven, Arthur J. Learn, John D. Porter, Theodore S. Fahlen, Shiyou Pei, William J. Cummings
  • Patent number: 6992307
    Abstract: An electron gun is composed of a hemispherical cathode (1) and a second bias electrode (8) having apertures (9, 7, 11) along an optical axis of an electron beam fired from the electron gun, a first bias electrode (6) and an anode (10), arranged in that order, as well as a controller for variably controlling an electric potential applied to the first and second bias electrodes. The controller, for example, holds the sum of the electric potentials of the first and second bias electrodes relative to the cathode (1) substantially constant. Further, by adding one or more third bias electrode(s) (20) between the first and second bias electrodes (6, 8) as necessary, the intensity of the electron beam discharged from the high-intensity, high-emittance electron gun can be adjusted without affecting the current density angular distribution.
    Type: Grant
    Filed: June 23, 2004
    Date of Patent: January 31, 2006
    Assignees: Canon Kabushiki Kaisha, Hitachi High-Technologies Corp.
    Inventors: Yoshikiyo Yui, Hiroya Ohta
  • Patent number: 6982519
    Abstract: Systems and methods are described for individually electrically addressable carbon nanofibers on insulating substrates. An apparatus includes an electrically conductive interconnect formed on at least a part of an insulating surface on a substrate; and at least one vertically aligned carbon nanofiber coupled to the electrically conductive interconnect. A kit includes a substrate having an insulating surface; an electrically conductive interconnect formed on at least a part of the insulating surface; and at least one vertically aligned carbon nanofiber coupled to the electrically conductive interconnect.
    Type: Grant
    Filed: September 26, 2001
    Date of Patent: January 3, 2006
    Assignee: UT-Battelle LLC
    Inventors: Michael A. Guillorn, Timothy Eric McKnight, Vladimir I. Merkulov, Anatoli Vasilievich Melechko, Michael Leon Simpson
  • Patent number: 6972512
    Abstract: A field emission display with reflection layer has an improved insulating supporting device. The major feature is to place a reflection layer on the insulating supporting device. From the special structure, the insulating supporting device can enhance the emission efficiency of the phosphors powder rather than the primary function of the insulating support. The field emission display with reflection layer has an anode structure, a cathode structure and the supporting device.
    Type: Grant
    Filed: March 5, 2004
    Date of Patent: December 6, 2005
    Assignee: Teco Nanotech Co., LTD
    Inventors: Chi Hung Hsiao, Jin-Shou Fang, Kuei-Wen Cheng
  • Patent number: 6960876
    Abstract: An electron emission device with nano-protrusions is described. Electrons are emitted from the nano-protrusions and directed by one or more conductors into beams. The beams may be shaped to be collimated, diverged, or converged. The shaped beams from one or more nano-protrusions may be focused onto a target spot through the use of additional electron optics.
    Type: Grant
    Filed: February 27, 2003
    Date of Patent: November 1, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Huei-Pei Kuo, Si-Ty Lam, Sam Burriesci, Steven Louis Naberhuis, Henryk Birecki, Xia Sheng
  • Patent number: 6958571
    Abstract: A method of manufacturing an electron-emitting element (20) for emitting electrons from diamond includes the first step of forming a diamond columnar member (25) on a diamond substrate (21), and the second step of forming an electron-emitting portion (30) having a base portion (36) and a sharp-pointed portion (32) which is located closer to a distal end side than the base portion (36) and emits the electrons by performing etching processing with respect to the columnar member (25).
    Type: Grant
    Filed: August 30, 2001
    Date of Patent: October 25, 2005
    Assignees: Sumitomo Electric Industries, Ltd., Japan Fine Ceramics Center
    Inventors: Yoshiki Nishibayashi, Yutaka Ando, Kiichi Meguro, Takahiro Imai
  • Patent number: 6949873
    Abstract: An amorphous diamond electrical generator having a cathode at least partially coated with amorphous diamond material and an intermediate member coupled between the cathode and an anode. The amorphous diamond material can have at least about 90% carbon atoms with at least about 20% of the carbon atoms bonded in a distorted tetrahedral coordination. The amorphous diamond coating has an energy input surface in contact with a base member of the cathode and an electron emission surface opposite the energy input surface. The electron emission surface can have an asperity height of from about 10 to about 1,000 nanometers and is capable of emitting electrons upon input of a sufficient amount of energy. The intermediate member can be coupled to the electron emission surface of the amorphous diamond coating such that the intermediate member has a thermal conductivity of less than about 100 W/mK and a resistivity of less than about 80 ??-cm at 20° C.
    Type: Grant
    Filed: June 11, 2003
    Date of Patent: September 27, 2005
    Inventor: Chien-Min Sung
  • Patent number: 6943488
    Abstract: Provided are electron-emitting devices improved in durability during concentration of an electric field and thus rarely suffering chain discharge breakdown. An electron-emitting device has an electroconductive film, a layer placed on the electroconductive film and containing aluminum oxide as a main component, a pore placed in the layer containing aluminum oxide as a main component, and an electron emitter placed in the pore and containing a material of the electroconductive film, and the electron emitter is porous and is electrically connected to the electroconductive film.
    Type: Grant
    Filed: September 17, 2001
    Date of Patent: September 13, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Nobuhiro Yasui, Tohru Den
  • Patent number: 6940218
    Abstract: A field-emission electron source element includes a cathode substrate, an insulating layer that is formed on the cathode substrate and has an opening, a lead electrode formed on the insulating layer, and an emitter formed in the opening. A surface layer of an electron emitting region of the emitter is doped with at least one reducing element selected from the group consisting of hydrogen and carbon monoxide. Further, an image display apparatus including the above-mentioned field-emission electron source element is provided. This makes it possible to obtain not only a stable field-emission electron source element that does not cause a current drop even after a high current density operation for a long time but also a high-performance image display apparatus that can maintain a stable display performance over a long period of time.
    Type: Grant
    Filed: August 8, 2003
    Date of Patent: September 6, 2005
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Keisuke Koga, Toru Kawase, Kenichi Honda, Tetsuya Norikane
  • Patent number: 6936958
    Abstract: A gap formed between cathode wires 2 (electron emitting sources 2a) and control electrodes 4 is made uniform and a gap formed between a rear panel 100 and a face panel 200 is held at a predetermined value with high accuracy. Plate-like members are used as the control electrodes 4. Holes 4a which allow electrons emitted from the electron emitting sources 2a provided to the cathode wires 2 to pass through the control electrodes 4 toward the face panel 200 side are formed in pixel regions which are defined by the cathode wires 2 and the control electrodes 4 crossing the cathode wires 2 both of which are formed on the rear panel 100. Contact portions 10 which are projected toward the rear panel 100 side and support the control electrodes 4 are provided between the neighboring cathode wires 2. Further, gap holding members 9 which hold the gap between the face panel 200 and the rear panel 100 at the predetermined value are provided right above the contact portions 10 and at the face panel 200 side.
    Type: Grant
    Filed: April 9, 2002
    Date of Patent: August 30, 2005
    Assignee: Hitachi, Ltd.
    Inventors: Kenji Miyata, Shigemi Hirasawa, Tomio Yaguchi, Yuuichi Kijima
  • Patent number: 6927534
    Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.
    Type: Grant
    Filed: August 7, 2003
    Date of Patent: August 9, 2005
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jun-hee Choi, Seung-nam Cha, Hang-woo Lee
  • Patent number: 6927533
    Abstract: An electron beam apparatus including a hermetic container provided with an electron source, in which, when a first member is arranged in the hermetic container, at least part of the first member is coated with a film, and the film is configured in such a manner that it includes two regions, a first region and a second region different in electron density from the first region and the second region forms a network in the first region. This three-dimensional network structure allows a member being charged to be preferably controlled. Thereby, it is possible to control the effects of a member being charged which is used in an electron beam apparatus.
    Type: Grant
    Filed: October 7, 1999
    Date of Patent: August 9, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Nobuhiro Ito, Hideaki Mitsutake
  • Patent number: 6922014
    Abstract: A field emission display includes a first substrate, cathode electrodes formed on the first substrate, conductive layers formed on the cathode electrodes having first apertures to expose portions of the cathode electrodes, an insulating layer formed on the conductive layers and having second apertures communicating with the first apertures, gate electrodes formed on the insulating layer and having third apertures communicating with the second apertures, emitters formed on the cathode electrodes and within the first apertures, a second substrate provided opposing the first substrate with a predetermined gap therebetween; and an anode layer formed on the second substrate, and phosphor layers formed on the anode electrode. In a first direction, second and third measurements of the second and third apertures are larger than a first measurement of the first apertures, and each of the emitters is realized in an integral unit.
    Type: Grant
    Filed: October 17, 2002
    Date of Patent: July 26, 2005
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Tae-Sik Oh, Jong-Min Kim, Sang-Jin Lee
  • Patent number: 6917147
    Abstract: A triode type cathode structure including a cathode assembly composed of a cathode electrode at least one electron emitter and a resistive layer inserted between the cathode electrode and the at least one electron emitter to connect them together electrically. The triode cathode structure also includes a grid electrode separated from the cathode assembly by a layer of electrical insulation. The cathode electrode is arranged in a first plane and the at least one electron emitter is arranged in a second plane parallel to the first plane and the cathode electrode and each electron emitter are separated by a same distance measured in a third plane parallel to the first and second planes.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: July 12, 2005
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean Dijon, Adeline Fournier, Brigitte Montmayeul, Aimé Perrin
  • Patent number: 6914372
    Abstract: Disclosed are an electron-emitting element having a large operating current at a low operating voltage and excellent operation stability, and an electron source, an image display device and the like utilizing such an electron-emitting element, and further a method of fabricating such an element with few process steps at low cost. A cold cathode member is configured utilizing hybrid particle of a first particle serving to emit electrons into the space and a second particle being in the vicinity of the first particle and serving to control the position of the first particle. In this configuration, it is preferable that the first particle have a higher electron emission efficiency than the second particle and that the second particle be conductive.
    Type: Grant
    Filed: October 12, 2000
    Date of Patent: July 5, 2005
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Koji Akiyama, Tetsuya Shiratori, Hideo Kurokawa, Toru Kawase
  • Patent number: 6914373
    Abstract: A cathode ray tube according to the present invention include a cold cathode electron gun, the cold cathode electron gun including a cold cathode array for emitting electrons through field emission, a gate electrode for controlling the field emission, a first selective electrode provided around the cold cathode array and the gate electrode, and a second selective electrode opposing the first selective electrode, and the second selective electrode is adapted to have a lower potential than the gate electrode and the first selective electrode. In accordance with this configuration, the divergence of electron beams emitted from any positions in the cold cathode array can be converged uniformly upon removing electron beams emitted at a great emission angle. This allows the electron beams thereafter to be made narrower by an electrostatic lens. As a result, the present invention can provide a cathode ray tube capable of forming a high-resolution image.
    Type: Grant
    Filed: June 27, 2002
    Date of Patent: July 5, 2005
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takashi Itoh, Masahide Yamauchi, Koji Fujii, Keisuke Koga, Toru Kawase
  • Patent number: 6914381
    Abstract: A flat panel display includes an electron emitter plate provided with electron emitters, a phosphor plate provided with phosphors and a space defined by the electron emitter plate and the phosphor plate for form a substantial vacuum atmosphere therebetween, wherein a great number of fine recess structures are formed on the surface of a metal film formed on the electron emitter plate, and fine fibered substances or carbon nanotubes or substances containing the fine fibered substances or carbon nanotubes are arranged on the fine recess structures to form electron emitters.
    Type: Grant
    Filed: July 17, 2002
    Date of Patent: July 5, 2005
    Assignee: Hitachi, Ltd.
    Inventors: Makoto Okai, Takahiko Muneyoshi, Tomio Yaguchi, Nobuaki Hayashi
  • Patent number: 6911768
    Abstract: An emitter has an electron supply and a porous cathode layer having nanohole openings. The emitter also has a tunneling layer disposed between the electron supply and the cathode layer.
    Type: Grant
    Filed: October 1, 2002
    Date of Patent: June 28, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Zhizhang Chen, Sriram Ramamoorthi, Hung Liao, Paul Benning, Alexander Govyadinov
  • Patent number: 6911766
    Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.
    Type: Grant
    Filed: August 19, 2003
    Date of Patent: June 28, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Kanwal K. Raina, Benham Moradi
  • Patent number: 6903500
    Abstract: A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.
    Type: Grant
    Filed: January 8, 2003
    Date of Patent: June 7, 2005
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-won Jeong, Ji-beom Yoo, Whi-kun Yi, Jeong-hee Lee, Se-gi Yu, Chang-soo Lee, Jung-na Heo
  • Patent number: 6902458
    Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
    Type: Grant
    Filed: January 12, 2004
    Date of Patent: June 7, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Zhizhang Chen, Michael David Bic, Ronald L. Enck, Michael J. Regan, Thomas Novet, Paul J. Benning
  • Patent number: 6900580
    Abstract: A field emission device having bundles of aligned parallel carbon nanotubes on a substrate. The carbon nanotubes are oriented perpendicular to the substrate. The carbon nanotube bundles may be up to 300 microns tall, for example. The bundles of carbon nanotubes extend only from regions of the substrate patterned with a catalyst material. Preferably, the catalyst material is iron oxide. The substrate is preferably porous silicon, as this produces the highest quality, most well-aligned nanotubes. Smooth, nonporous silicon or quartz can also be used as the substrate. The method of the invention starts with forming a porous layer on a silicon substrate by electrochemical etching. Then, a thin layer of iron is deposited on the porous layer in patterned regions. The iron is then oxidized into iron oxide, and then the substrate is exposed to ethylene gas at elevated temperature. The iron oxide catalyzes the formation of bundles of aligned parallel carbon nanotubes which grow perpendicular to the substrate surface.
    Type: Grant
    Filed: May 15, 2001
    Date of Patent: May 31, 2005
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Hongjie Dai, Shoushan Fan, Michael Chapline, Nathan Franklin, Thomas Tombler