Abstract: A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.

Abstract: A vacuum tube having its anode/collector coated with carbonized resin plus pyrocarbon material to reduce out-gassing and secondary electron emission and the method of coating the anode/collector.

Abstract: A nickel alloy for the manufacture of cathodes for cathode-ray tubes, comprises magnesium and aluminium in proportions chosen so as to allow good adhesion of an emissive oxide layer to the basis metal cap consisting of the alloy.

Abstract: The electric lamp (1) has a lamp vessel (2), wherein an electric element (3) is accommodated. Said element is connected to current conductors (4), molybdenum end portions (5) of which extend outside the lamp vessel and have a skin of titanium nitride or chromium carbide as a protection against oxidation.

Abstract: There is provided a field emitter array on a substrate. The field emitter array includes field emitter devices. At least one of the field emitter devices includes a conducting gate layer having a top surface and at least one side surface, disposed over the substrate. The at least one of the field emitter devices also includes a field emitter tip disposed on the substrate adjacent the at least one side surface, and an insulating layer disposed at least on at least one side surface adjacent the field emitter tip to prevent arcing between the field emitter tip and the conducting gate layer.

Abstract: An improved process for fabricating emitter structures from nanowires, wherein the nanowires are coated with a magnetic material to allow useful alignment of the wires in the emitter array, and techniques are utilized to provide desirable protrusion of the aligned nanowires in the final structure. In one embodiment, nanowires at least partially coated by a magnetic material are provided, the nanowires having an average length of about 0.1 &mgr;m to about 10,000 &mgr;m. The nanowires are mixed in a liquid medium, and a magnetic field is applied to align the nanowires. The liquid medium is provided with a precursor material capable of consolidation into a solid matrix, e.g., conductive particles or a metal salt, the matrix securing the nanowires in an aligned orientation. A portion of the aligned nanowires are exposed, e.g., by etching a surface portion of the matrix material, to provide desirable nanowire tip protrusion.

Abstract: A field-emission-display (FED) having a pixel structure which operates at small anode voltages, and thus, provides the FED with an increased life-time. The pixel structure of the FED includes an edge emitting cathode and an anode spaced from the cathode. The cathode has a first conductive film with a low electron affinity, such as alpha-carbon and a second conductive film disposed on the first conductive film. The first conductive film has an edge which is operative for emitting an electron beam. The anode has a third conductive film and a layer of light emitting material disposed over the third conductive film. Both the cathode and the anode are fabricated on a single glass substrate, which provides simple and reliable mass production technology compatible with planar silicon batch fabrication technology.

Abstract: Low work function materials are disclosed together with methods for their manufacture and integration with electrodes used in thermionic conversion applications (specifically microminiature thermionic conversion applications). The materials include a mixed oxide system and metal in a compositionally modulated structure comprised of localized discontinuous structures of material that are deposited using techniques suited to IC manufacture, such as rf sputtering or CVD. The structures, which can include layers are then heated to coalescence yielding a thin film that is both durable and capable of electron emission under thermionic conversion conditions used for microminiature thermionic converters. Using the principles of the invention, thin film electrodes (emitters and collectors) required for microconverter technology are manufactured using a single process deposition so as to allow for full fabrication integration consistent with batch processing, and tailoring of emission/collection properties.

Abstract: A vacuum tube having its anode/collector coated with carbonized resin plus pyrocarbon material to reduce out-gassing and secondary electron emission and the method of coating the anode/collector.

Abstract: An electron tube cathode is disclosed, comprising a base, electron emissive material layers formed on the base and containing alkaline earth metal oxides including barium, and reducing metal layers interposed between the emissive material layers. The metal layers comprise at least one metal selected from W, Mo, Ta and Ti. The metal layers further comprise any one of rhenium, yttrium or a mixture thereof in the amount of 3 to 5 wt % thereof. The amount of the entire metal layer is 8 to 15 wt % of the entire emissive layer comprising the emissive material layers and the metal layers. The entire metal layer has a thickness of 3 to 5 &mgr;m. Each of the metal layers comprise at least one or more layers formed by means of a spraying method. The present invention provides advantages of enhancing emission characteristics and life characteristics of the cathode by increasing the amount of free Ba.

Abstract: A high-pressure discharge lamp which includes a light-transmitting air-tight discharge container, an electrode formed of tungsten as a main component and fixedly sealed in the discharge container, and a discharge medium containing a halide of a light emitting metal and sealed in the discharge container. The surface of the electrode is defined as follows. That is, the average value of center line average roughness Ra of the surface, is set to 0.3 &mgr;m or less, or the average value of the center line average roughness Rz of the surface of the electrode, is set to 1.0 &mgr;m or less, or the average value of the surface area increasing rate of the surface of the electrode is set to 1.0% or less.

Abstract: At the outer boundary of a discharge container 1, a pair of opposed electrodes 3a and 4a and a pair of opposed electrodes 3b and 4b are disposed with a specified spacing being given between them, and to each pair of opposed electrodes, a high-frequency voltage is applied from a high-frequency, high-voltage power supply 8 through a limiting resistor 6a, 7a, and a limiting resistor 6b, 7b. Across each pair of opposed electrodes, a steamer of discharge plasma corresponding to the amperage of the discharge current is generated, however, by adjusting the resistance value of the above-mentioned limiting resistor 6a, 7a, and the resistance value of the limiting resistor 6b, 7b, the discharge current is appropriately set, and thus the streamers of discharge plasma generated across the pairs of opposed electrodes are made uniform.

Abstract: An yttrium film is formed on the surface of a substrate made of an Ni—Cr-based material by deposition or sputtering using resistance heating or an electron beam. The yttrium film is heated in an inert gas atmosphere containing a very small amount of hydrogen to hydrogenate yttrium. The resultant yttrium hydride is excellent as a cold emission material for a cold emission electrode and can be used for a cold emission discharge fluorescent tube.

Abstract: A x-ray tube comprises a cathode cup assembly. The cathode cup assembly comprises a filament positioned in a cathode cup. A surface of the cathode cup assembly is exposed to incident infrared radiation, and the surface is adapted to reflect a substantial portion of the incident radiation, in which the radiation has a wavelength in a range from about 0.2 &mgr;m to about 5.0 &mgr;m.

Abstract: A high-pressure discharge lamp which includes a light-transmitting air-tight discharge container, an electrode formed of tungsten as a main component and fixedly sealed in the discharge container, and a discharge medium containing a halide of a light emitting metal and sealed in the discharge container. The surface of the electrode is defined as follows. That is, the average value of center line average roughness Ra of the surface, is set to 0.3 &mgr;m or less, or the average value of the center line average roughness Rz of the surface of the electrode, is set to 1.0 &mgr;m or less, or the average value of the surface area increasing rate of the surface of the electrode is set to 1.0% or less.

Abstract: In an indirectly heated cathode comprising a heater having an alumina electrical insulating layer formed by layering and sintering alumina particles on a surface of a metal wire and an electron-emitting part that receives heat from the heater and emits thermoelectrons, and a cathode-ray tube comprising the indirectly heated cathode, the alumina particles contained in the alumina electrical insulating layer have a purity of at least 99.7 wt % and the alumina particles used for forming the alumina electrical insulating layer have a Na content of 20 ppm or less or a Si content of 100 ppm or less, thus enabling stable production, avoiding the occurrence of cracks in the alumina electrical insulating layer and heater deformation even in the practical operation of the cathode-ray tube, and lengthening the life of the heater.

Abstract: The fabrication of activated carbon based supercapacitors. In particular, a monolithic activated carbon plate or honeycomb electrodes (4, 6 and 8) made by extrusion, molding, or casting is described. The carbon monolithic plates or honeycombs are fabricated from synthetic carbon precursor and active ingredient leading to superior electrical properties.

Abstract: An electron discharge device characterized in having a conductive layer on one surface of a dielectric substrate, a dielectric layer and a conductive layer, in this order, on the other surface of the substrate, wherein the dielectric layer has a thickness equal to or less than 5 nm and a permittivity lower than that of the dielectric substrate. A method for discharging electrons from a surface of a conductive layer (2) by applying voltage between conductive layers (1) and (2) of a device having the conductive layer (1) on one surface of a dielectric substrate, a dielectric layer and the conductive layer (2), in this order, on the other surface of the substrate, wherein the dielectric layer has a thickness equal to or less than 5 nm and a permittivity lower than that of the dielectric substrate, such that a conductive layer (1) serves as a cathode and that the conductive layer (2) serves as an anode.

Abstract: The present invention has an object to provide a method of manufacturing an electronic tube capable of eliminating deterioration of image quality due to an excessively high electron reflection effect of a material comprising a metal element with an atomic number not lower than 70 and painted on a shadow mask and deterioration of image quality due to spontaneous peeling of a coat on the surface of the shadow mask. A paint mainly comprising a solated metal oxide or a metal alkoxide of an element with an atomic number not lower than 40 is painted to form an electron reflection coat with an amount of coating of less than 2 mg/cm2 so as to achieve coating on an electron gun side surface of a shadow mask.

Abstract: A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate and then depositing the film. The etching step creates nucleation sites on the substrate for the film deposition process. With this process patterning of the emitting film is avoided. A field emitter device can be manufactured with such a film. A field emission device results where the cathode has a continuous film that has not been subjected to etching, and thus has superior emission properties. A pixel in the cathode includes the emitting film deposited directly on the substrate with the conductor deposited on one or more sides of the emitter film. In one embodiment the emitter is in a window formed in the conductor layer.

Abstract: A discharge cell for use in an ozone generator is provided which can suppress a time-related reduction in ozone concentration without adding a catalytic gas such as nitrogen gas to oxygen gas as a raw material gas. The discharge cell includes a pair of electrodes disposed in an opposed spaced relation with a discharge space therebetween, and a dielectric layer of a three-layer structure consisting of three ceramic dielectric layers successively stacked on at least one of the electrodes, wherein a first dielectric layer of the dielectric layer contacting the one electrode contains no titanium dioxide, wherein a second dielectric layer of the dielectric layer exposed to the discharge space contains titanium dioxide in a metal element ratio of not lower than 10 wt %.

Abstract: A method for fabricating a field emission device (200) includes the steps of forming on the surface of a substrate (110) a cathode (112), forming on the cathode (112) a dielectric layer (114), forming an emitter well (115) in the dielectric layer (114), forming within the emitter well (115) an electron emitter structure (118) having a surface (123), forming on a portion of the dielectric layer (114) a gate electrode (116), depositing on the dielectric layer (114) a sacrificial layer (210), thereafter depositing on the surface (123) of the electron emitter structure (118) a coating material (220, 320, 420) that has an emission-enhancing material, and then removing the sacrificial layer (210).

Abstract: An electron-emitting apparatus is constituted by an electron-emitting device having an electroconductive film including electron-emitting portions, and an electrode for attracting electrons. An electrically insulated elongated region is formed in the electroconductive film to divide the film into a higher potential side and a lower potential side. The insulated region has a substantially periodical shape formed of portions projecting to the higher potential side and portions projecting to the lower potential side. Continuous electron-emitting portions are present at at least part of the portion projecting to the higher potential side in one period of the insulated region.

Abstract: An image-forming apparatus includes an electron source including one or more than one electron-emitting devices on a substrate, each electron-emitting device having a pair of oppositely disposed device electrodes, an electroconductive film connected to the pair of device electrodes and an electron-emitting region formed in part of the electroconductive film accompanied by a carbonaceous film which contains carbon or carbon compound as principal ingredient and is formed on and in a vicinity of the electron-emitting region, and an image-forming member for forming an image by emitting light when irradiated with electron beams emitted from the electron source. The electron source and the image-forming member are contained in a vacuum envelope, and an organic substance exists in the vacuum envelope to show a partial pressure of the organic substance greater than 1.times.10.sup.-6 Pa and a total pressure lower than 1.times.10.sup.-3 Pa.

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive thin film therebetween having an electron-emitting region. The electroconductive thin film is coated with an additional film at the electron-emitting region to provide an additional resistance within a range from 500 .OMEGA. to 100 k.OMEGA..

Abstract: A low pressure discharge lamp in which, even during uninterrupted operation, a low lamp voltage characteristic is maintained over a long time interval and in which high radiant efficiency can be obtained over a long time is achieved via a low pressure discharge lamp which has a tubular glass bulb in which a pair of electrodes are located opposite one another, by an electron emission material which contains lithium being included on or in the electrode substrate. Advantageously, the electron emission material contains at least one of the following materials: metallic lithium, an alloy of lithium and another metal, an oxide of lithium, a mixture of an oxide of lithium with another metal oxide, and an oxide which contains lithium and another metal element and which is a compound identified by the formula Li--M--O.sub.x where M designates at least one element selected from among the alkali earth metals, rare earth metals and transition metal, and x is the number of oxygen atoms required for valency equalization.

Abstract: An electron-emitting device contains an electron focusing system (37 or 37A) formed with a base focusing structure (38 or 38A), a focus coating (39 or 39A), and an access conductor (106 or 116). The focus coating overlies the base focusing structure and extends into a focus opening (40). The access conductor is electrically coupled to the lower surface of the focus coating. A potential for controlling the focusing of electrons that travel through the focus opening is provided to the focus coating via the access conductor. The focus coating is typically formed by an angled deposition technique.

Abstract: A cold cathode electron emission structure includes an amorphous carbon matrix having cesium dispersed therein, with the cesium present in substantially non-crystalline form. A cesium-carbon-oxide layer is positioned on the amorphous carbon matrix, constitutes an electron emission surface and causes the cold cathode electron emission structure to exhibit a lowered surface work function. A display structure including the aforedescribed cold cathode electron emission structure further includes a target electrode including a phosphor and exhibiting a target potential for attraction of electrons. A gate electrode is positioned between the electron emission structure and the target electrode and is biased at a gate potential which attracts electrons, but which is insufficient, in combination with the target potential, to cause emission of a beam of electrons from the electron emission structure.

Abstract: A cold-cathode discharge device for emitting light. The device has a fluorescent tube and electrodes containing R.sub.2 O.sub.3-z (where R is an atom or an atom group of rare earth elements, O is oxygen, and z is 0.0 to 1.0). The electrodes are made by oxidation of the rare earth elements under an atmosphere in which oxygen and/or oxygen-containing substance is 1% or less by volume, in order to control the stoichiometry of the oxide.

Abstract: The present invention is directed to a conductor/electrode for a faceplate anode of a field emission display wherein said conductor/electrode is comprised of tin oxide. Alternatively, the present invention is directed to a transparent conductor/electrode for a faceplate anode of a field emission display wherein said conductor/electrode is comprised of from about 90% to about 99% tin oxide and from about 1% to about 10% antimony.

Abstract: A field emitter including an exposed wide band gap emission area in contact with and protruding from a planar surface of a conductive metal, and a method of making is disclosed. Suitable wide band gap materials (2.5-7.0 electron-volts) include diamond, aluminum-nitride and gallium-nitride; suitable conductive metals include titanium, tungsten, gold and graphite. The method includes disposing the wide band gap material on a substrate, disposing the conductive metal on the wide band gap material, and etching the conductive metal to expose wide band gap emission areas. The emission areas are well suited for large area flat panel displays.

Abstract: An electron-emitting device comprises an electroconductive film including an electron-emitting region disposed between a pair of electrodes arranged on a substrate. The electron-emitting region is formed close to the step portion formed by one of the electrodes and the substrate.

Abstract: A field emission device according to the present invention comprises a support substrate; a cathode mounted on a surface of said support substrate; a first diamond portion located on any surface of said substrate, said first diamond portion substantially having an electrical connection with said cathode; a second diamond portion located on the substrate surface on which said first diamond portion is also located, said second diamond portion including plurality of diamond protuberances; and an anode positioned spaced apart from said first and second diamond portions, wherein a space is formed between said anode and said second diamond portion.

Abstract: A process for manufacturing a field emission element including a substrate, and an emitter and a gate each arranged on the substrate is provided. The emitter is formed at at least a tip portion thereof with an electron discharge section, which is formed of metal or semiconductor into a monocrystalline structure or a polycrystalline structure preferentially oriented in at least a direction perpendicular to the substrate by deposition.

Abstract: A field emitter device formed by a veil process wherein a protective layer comprising a release layer is deposited on the gate electrode layer for the device, with the protective layer overlying the circumscribing peripheral edge of the opening of the gate electrode layer, to protect the edge of the gate electrode layer during etching of the field emitter cavity in the dielectric material layer on a substrate, and during the formation of a field emitter element in the cavity by depositing a field emitter material through the opening. The protective layer is readily removed subsequent to completion of the cavity etching and emitter formation steps, to yield the field emitter device. Also disclosed are various planarizing structures and methods, and current limiter compositions permitting high efficiency emission of electrons from the field emitter elements at low turn-on voltages.

Abstract: Thin-film edge emission devices and methods for forming are provided. The emitters are formed to have extended edges. They are formed by oblique deposition on a surface of material which extends from a substrate. The material is substantially removed to leave the thin-film emitter. A gate may then be formed around the emitter. Arrays of such thin-film emitters may be used in a variety of electronic devices.

Abstract: A discharge electrode for electrostatic precipitators has a support composed of an electrically non-conductive material, a fabric composed of crossed and twisted threads and disposed on an exterior of the support, the support having an upper end and a lower end, and further comprising an additional layer of a synthetic elastomer which covers at least one of the ends over a length of 400-600 mm. Also, an electrostatic precipitator for treatment of exhaust gasses containing SO.sub.2, SO.sub.3, HF or HCL is proposed with the new discharge electrode.

Abstract: With a production of a cathode member for an electron tube having cathode materials containing Ni, a metal having a reduction behavior and an electron emissive agent sintered to be one body and its electron emitting surface subjected to a specular processing, it is possible to obtain an inexpensive cathode characterized by that: the operation temperature is low; the electron emission distribution is excellent because of the smooth electron emitting surface; and the electron emission is enabled with a high current density for a long interval of time.

Abstract: A lamp for emitting in the visible portion of the spectrum, which utilizes a fill which includes a selenium and/or a sulfur containing substance. The lamp has superior performance characteristics. Special electrode structures are provided which enhance longevity.

Abstract: A passivated organic device including a transparent layer of conductive material formed on a supporting substrate. An active organic media formed on the transparent layer and an electrode formed on the active organic media, the electrode including a thin layer of lithium formed on the active organic media and a layer of indium overlying and passivating the layer of lithium, and completing the electrode.

Abstract: A gated electron-emitting device contains a multiplicity of electron-emissive elements, each formed with a pedestal (98) and an overlying cone (94.sub.1). In each electron-emissive element, the base diameter of the cone is greater than the element, the base diameter of the cone is greater than the diameter of the pedestal. With the pedestal being electrically conductive, the cone may be electrically resistive. Alternatively, each electron-emissive element can be an elongated element (30B) that reaches a maximum diameter at a point between, and spaced apart from, both ends of the element.

Abstract: An electroluminescent display includes a transparent electrode (4) and a metal assist structure (6) formed over a portion of the transparent electrode (6) such that the metal assist structure (6) is in electrical contact with the transparent electrode (4). The metal assist structure (6) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12). The first and second refractory metal layers (10, 14) are capable of protecting the primary conductor layer (12) from oxidation when the electroluminescent display is annealed to activate a phosphor layer (18). In an alternate embodiment, an electroluminescent display includes a substrate (2) and a metal electrode (22) formed on the substrate (2).

Abstract: An electron device of the present invention comprises an i-type diamond layer formed on a substrate, and an n-type diamond layer formed on the i-type diamond layer and having a first surface region formed flatly and a second surface region containing an emitter portion, which are set in a vacuum container, in which the emitter portion formed of the n-type diamond has a bottom area 10 or less .mu.m square and projects relative to the first surface region. In the n-type diamond layer, a difference is fine between the conduction band and the vacuum level. Also, since the n-type diamond layer is doped with an n-type dopant in a high concentration, metal conduction is dominant as conduction of electrons. Therefore, setting the temperature of the substrate at a predetermined temperature and generating an electric field near the surface of the emitter portion, electrons are emitted with a high efficiency from the tip portion of the emitter portion into the vacuum.

Abstract: A fine substrate contact electrode (bump) made of a refractory metal having low resistance and sufficient mechanical strength is fabricated on a wiring substrate with a polyimide resin film serving as an electrically insulating layer. It is not the entire surface of the contact electrode that is covered with a high-resistance oxide film since the top surface of the refractory metal such as tungsten is covered with an oxidation-resistant metal film. The substrate contact electrode has a sufficient mechanical strength since the side of the tungsten bump is surrounded by a side wall reinforcement film even where the tungsten formed by the blanket chemical vapor deposition method is polycrystalline. Since the polyimide film is previously embedded before the substrate contact electrode is fabricated, the electrode can be formed on the polyimide film having a desired thickness on the entire substrate surface.

Abstract: An electron-emitting device having an electron-emitting portion between electrodes on a substrate comprises a region A and a region B, the region A being electrically connected through the region B to at least one of the electrodes, electric conductivity .sigma..sub.1 of the material mainly constituting the region A and electric conductivity of the material .sigma..sub.2 mainly constituting the region B being in the relation of .sigma..sub.1 >.sigma..sub.2, and the region A being the electron-emitting portion. An electron beam-generating apparatus and image-forming apparatus comprise the electron-emitting device and a modulation means for modulating the electron beams emitted from the electron-emitting elements in accordance with information signals.

Abstract: A vacuum microelectronic field-emission device includes: a substrate; an emitter portion formed to have at least an wedge portion extending in parallel to the substrate, the emitter portion being supported by the substrate; a gate portion formed a first given distance apart from the tip of the emitter portion, the gate portion being supported by the substrate, the gate portion being electrically insulated from the emitter portion; and a collector portion formed a second given distance apart from a tip of the emitter portion, the collector portion being supported by the substrate, the second given distance is equal to or larger than the first given distance, the collector portion being electrically insulated from the emitter portion and the gate portion.

Abstract: A field emission element including a gate and an emitter and capable of preventing any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.

Abstract: A field emitter structure with emitter edge comprising of individual comb elements. A resistive film is inserted between the lead-in conductor and the emitter edge and a conductive film is electrically attached to the conductor and capacitively coupled to the emitter.

Abstract: A semiconductor vacuum device including a semiconductor substrate 3, an insulator film 2 formed on the substrate 3, and a single crystal semiconductor film 1 formed on the insulator film 2. The single crystal semiconductor film 1 has a first and a second tapered edge opposite to one another but spaced apart over a gap formed in the insulator film 2. The first tapered edge acts 6 as a cathode and the second tapered edge acts as a gate 7, the substrate 1 acting as an anode into which said electrons emitted from the cathode above.

Abstract: An embodiment of the present invention is a short arc lamp comprising an alumina ceramic cylindrically shaped body with a concave opening at one end that is silvered to form a reflector, a cathode suspended within the concave opening in opposition to an anode that protrudes through a hole in the center of the concave opening from the opposite end of the body, a circular iron base that supports the anode at its center and attaches to the body with a metal ring that bridges a separation between the base and the body, and a copper heat transfer pad that is brazed to the inside of the metal ring and the body such that heat is efficiently transferred from the area of the concave reflector near the hole for the anode to a heat sink that attaches to the metal ring outside the lamp. A copper plug brazed as an integral part of the anode serves to distribute heat efficiently throughout the anode.