Abstract: One example embodiment includes one or more current-controlled electrodes exposed to a fluid and configured to generate ions in the fluid within an electric field, one or more current-controlling elements having one or more current-limiting elements configured to limit an amount of current permitted in the one or more current-controlled electrodes, and one or more current-changing elements configured to change a limit on the amount of current permitted in the one or more current-controlled electrodes, and an amount of ions generated in the fluid is based on the amount of current permitted in the one or more current-controlled electrodes as regulated by the one or more current-limiting elements and the one or more current-changing elements.

Abstract: A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy less than or equal to 500 keV.

Abstract: System and method for decapsulation of plastic integrated circuit packages by providing a microwave generator, providing a Beenakker resonant cavity connected to the microwave generator, which cavity comprises a coupling antenna loop, providing the cavity with a tube or tubes for supply of plasma gas and etchant gas or gases and with means for igniting the plasma gas, and providing that the cavity is set at a predefined value of its Q factor by embodying the coupling antenna loop and/or a wire optionally attached to the coupling antenna loop in a metal or metal alloy, or providing that at least at part of its surface area the coupling antenna loop and/or the wire is coated with a metal or metal alloy different than copper and with a higher resistivity than copper.

Abstract: An ion implantation system including an ion source for use in creating an ion beam is disclosed. The ion source has an ion source arc chamber housing that confines a high density concentration of ions within the chamber housing. An extraction member defining an appropriately configured extraction aperture allows ions to exit the source arc chamber. In a preferred embodiment, the extraction member defines a tailored extraction aperture shape for modifying an ion beam profile and producing a substantially uniform beam current across a dimension of the ion beam. The extraction aperture member defines an aperture in the form of an elongated slit having a width that varies, with wide ends and a narrow middle. The midsection of the extraction aperture has a narrower width than the opposite end sections.

Abstract: The purpose of the present invention is to provide a charged particle gun using merely an electrostatic lens, said charged particle gun being relatively small and having less aberration, and to provide a field emission-type charged particle gun having high luminance even with a high current. This charged particle gun has: a charged particle source; an acceleration electrode that accelerates charged particles emitted from the charged particle source; a control electrode, which is disposed further toward the charged particle source side than the acceleration electrode, and which has a larger aperture diameter than the aperture diameter of the acceleration electrode; and a control unit that controls, on the basis of a potential applied to the acceleration electrode, a potential to be applied to the control electrode.

Abstract: A cyclotron includes: a regenerator configured to move a beam of a charged particle on an orbit outward in a radial direction; and a magnetic channel configured to put the beam on an extraction orbit. The regenerator includes a pair of magnetic members for a regenerator. The magnetic member for a regenerator includes a first portion including a portion approaching the median plane as it goes outward in a radial direction and having an apex closest to the median plane. When viewed from the circumferential direction, assuming that a distance between the centerline of the apex in the radial direction and a first reference position set on a radially inner end side of the first portion is a first distance and a distance between the centerline and a second reference position set on a radially outer end side of the first portion is a second distance, the first distance is greater than the second distance.

Abstract: Apparatuses and methods for the moderation of positrons are provided herein. The apparatus includes a structure consisting of linear arrays of electrode and semiconductor structures of generally planar or cylindrical form with vacuum gaps between each element electrode. This structure may be contained within a vacuum chamber. The positron source is positioned adjacent to the moderator structure or the electrodes may act as the positron source by pair production through bombardment of high energy photons, electrons, or neutrons. Positrons from this source are implanted into the moderator material and drift to the moderator surfaces through the influence of the electric fields produced by the electrodes. Positrons are emitted from the surfaces of the moderator material and are confined by orthogonal electric and magnetic fields while they drift out from the vacuum gap between cathodes and anodes for extraction.

Abstract: Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.

Abstract: In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).

Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

Abstract: A charged particle beam source device adapted for generating a charged particle beam is provided. The charged particle beam source device includes an emitter tip adapted for providing charged particles. Furthermore, an extractor electrode having an aperture opening is provided for extracting the charged particles from the emitter tip. An aperture angle of the charged particle beam is 2 degrees or below the aperture angle being defined by a width of the aperture opening and a distance between the emitter tip and the extractor electrode, wherein the distance between the emitter tip and the extractor electrode is a range from 0.1 mm to 2 mm.

Abstract: A sampling cone of a mass spectrometer is disclosed having a metallic boride coating such as titanium diboride.

Abstract: Biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) is processed to produce useful products, such as fuels. For example, systems can use feedstock materials, such as cellulosic and/or lignocellulosic materials and/or starchy materials, to produce ethanol and/or butanol, e.g., by fermentation.

Abstract: Biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) is processed to produce useful products, such as fuels. For example, systems can use feedstock materials, such as cellulosic and/or lignocellulosic materials and/or starchy materials, to produce ethanol and/or butanol, e.g., by fermentation.

Abstract: An ionization gauge to measure pressure and to reduce sputtering yields includes at least one electron source that generates electrons. The ionization gauge also includes a collector electrode that collects ions formed by the collisions between the electrons and gas molecules. The ionization gauge also includes an anode. An anode bias voltage relative to a bias voltage of a collector electrode is configured to switch at a predetermined pressure to decrease a yield of sputtering collisions.

Abstract: An ion source includes a plasma generation chamber, at least one filament disposed inside the plasma generation chamber, at least one electrode disposed so as to be opposed to the plasma generation chamber, and configured to extract out an ion beam from the plasma generation chamber, and a plurality of permanent magnets disposed outside the plasma generation chamber, and configured to form cusped magnetic fields inside the plasma generation chamber, and a deposition preventive plate disposed parallel with an inner surface of a wall of the plasma generation chamber. The deposition preventive plate has recesses which are formed at such positions as to be opposed to the respective permanent magnets with the wall of the plasma generation chamber interposed in between.

Abstract: An annular ceramic washer has inner and outer cylindrical surfaces, first and second annular surfaces, and a winding path thick film resistor located on the inner surface. Metal washers are preferably brazed to the end ring surfaces. The annular ceramic washer is useful in vacuum tube applications in establishing a voltage on a target utilizing the voltage of an electrode coupled to the winding path thick film resistor.

Abstract: An ion source includes arc chamber housing defining an arc chamber. The arc chamber housing has an extraction plate in a fixed position, and the extraction plate defines a plurality of extraction apertures. The ion source also includes a shutter assembly positioned outside of the arc chamber proximate the extraction plate. The shutter assembly is configured to block at least a portion of one of the plurality of extraction apertures during one time interval. The ion source combined with relative movement of a workpiece to be treated with an ion beam extracted from the ion source enables a two dimensional ion implantation pattern to be formed on the workpiece using only one ion source.

Abstract: A mass spectrometer includes an ion source, which includes a coating or surface formed of a metallic carbide, a metallic boride, a ceramic or DLC, or an ion-implanted transition metal.

Abstract: A method and a device for injecting charged particles into the first cavity resonator of an RF particle accelerator are provided. A n electrode is provided at the entrance to the first cavity resonator, which electrode is connected to a DC voltage source and generates a potential well that accelerates the particles leaving an ion source towards the first cavity resonator. As a result of the ion source and the accelerator path, i.e., more particularly the cavity resonators of the accelerator path, lying at a common potential, more particularly earth potential, the electrostatic potential well does not contribute to the overall energy of the particles, the overall acceleration effect is brought about by voltage induction in the RF resonator and the DC voltage source is not loaded by the beam current, and so the latter need not be precisely regulated or powerful.

Abstract: An ion beam system uses a separate accelerating electrode, such as a resistive tube, to accelerate the ions while maintaining a low electric field at an extended, that is, distributed ion source, thereby improving resolution. A magneto-optical trap can be used as the ion source.

Abstract: A method for treating a workpiece. The method includes directing a first ion beam to a first region of a workpiece, wherein the first ion beam has a first ion angular profile of first ions extracted through an aperture of an extraction plate. The method also includes directing a second ion beam to the first region of the workpiece, wherein the second ion beam has a second ion angular profile different than the first ion profile of second ions extracted through the aperture of the extraction plate.

Abstract: An ion source includes a plasma generation chamber, at least one filament disposed inside the plasma generation chamber, at least one electrode disposed so as to be opposed to the plasma generation chamber, and configured to extract out an ion beam from the plasma generation chamber, and a plurality of permanent magnets disposed outside the plasma generation chamber, and configured to form cusped magnetic fields inside the plasma generation chamber, and a deposition preventive plate disposed parallel with an inner surface of a wall of the plasma generation chamber. The deposition preventive plate has recesses which are formed at such positions as to be opposed to the respective permanent magnets with the wall of the plasma generation chamber interposed in between.

Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

Abstract: A charged particle beam decelerating device includes a high-frequency cavity 34 provided on an orbit of a charged particle beam 1, and a phase synchronizing device 40 for synchronizing the charged particle beam 1 in the high-frequency cavity with a phase of a high-frequency electric field 4. By moving the high-frequency cavity 34 or changing an orbit length of the charged particle beam 1, the charged particle beam in the high-frequency cavity is synchronized with a phase of the high-frequency electric field 4.

Abstract: An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.

Abstract: A particle beam, segmented electron gun, segmented electron beam and electron collector system and method to achieve low power loss, segmented current control, and segmented energy control in electron beams, including a vacuum chamber to provide a region substantially free of background gas and allow for electron transport, an electron supply device including a segmented cathode to generate the segmented electron beam, an electrode with a grid conducting structure located in front of the segmented cathode and biased with respect to the segmented cathode in order to accelerate electrons away from the segmented cathode and control the current and energy of each electron beam segment, magnetic field production devices such as solenoidal and torroidal wire windings and permanent magnet material to produce magnetic fields to guide the segmented electron beam and to contain neutralizing-background-ions and an electron collector device including electrodes with a grid conducting structure and outer conducting shell

Abstract: An ion beam system uses a separate accelerating electrode, such as a resistive tube, to accelerate the ions while maintaining a low electric field at an extended, that is, distributed ion source, thereby improving resolution. A magneto-optical trap can be used as the ion source.

Abstract: The disclosure relates to systems and methods for interleaving operation of a linear accelerator that use a magnetron as the source of electromagnetic waves for use in accelerating electrons to at least two different ranges of energies. The accelerated electrons can be used to generate x-rays of at least two different energy ranges. In certain embodiments, the accelerated electrons can be used to generate x-rays of at least two different energy ranges. The systems and methods are applicable to traveling wave linear accelerators.

Abstract: A beam generator for generating an electrically neutral dual-particle (proton and electron) beam with a uniform magnetic pole orientation imposed on the particles. The uniform orientation gives the dual-particle beam a uniform magnetic field, enabling magnetic modulation of the beam and making the beam self-collimating. Proton and electron beams are generated separately but under common control to ensure equal particle densities to ensure net electrical neutrality when combined. The proton and electron beams may also be concurrently magnetically or electrostatically modulated before being combined. A magnetic lens imposes uniform right, neutral, or left spin on the combined beam. A resonant chamber with fixed or variable resonant frequency determines the frequency of a carrier signal modulated by the modulated combined beam. Electric neutrality prevents detection of the beam with antennas that rely on a signal inducing a voltage on a conductor.

Abstract: An electron accelerator that generates a photon beam with an energy of more than 0.5 MeV by means of an electron beam charging a target has a vacuum chamber with an intake opening and an exit opening, and an electron source at the input side. The target is arranged outside the vacuum chamber in the region of the exit opening in a housing in which a window is present that is permeable to photons and that is arranged opposite the exit opening in the beam direction of the electron beam. The target is permeated by at least one cooling channel.

Abstract: A particle beam therapy system using a spot scanning method includes a synchrotron, a beam transport system, an irradiation system, and a controller. A controller is configured to turn on a radio frequency electromagnetic field to be applied to an extraction system when a charged particle beam is to be supplied to the irradiation system, and turn off the radio frequency electromagnetic field to be applied to the extraction system when the supply of the charged particle beam to the irradiation system is to be blocked by means of an electromagnet provided in the beam transport system or in the synchrotron. The controller is also adapted to turn off a radio frequency acceleration voltage to be applied to an acceleration cavity in synchronization with the turning-off of the radio frequency electromagnetic field to be applied to the extraction device.

Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

Abstract: A charged particle beam extraction system and method capable of shortening the irradiation time and increasing the number of patients treatable per unit time. The charged particle beam extraction system comprises a synchrotron for cyclically performing patterned operation including four steps of introducing, accelerating, extracting and decelerating an ion beam, an on/off switch for opening or closing connection between an RF knockout electrode and an RF power supply for applying RF power to the RF knockout electrode, and a timing controller for controlling on/off-timing of the on/off switch such that when extraction of the ion beam is stopped at least once during the extraction step of the synchrotron, an amount of the ion beam extracted from the synchrotron in one cycle is held substantially at a setting value.

Abstract: An ion source is to extract a ribbon-shaped ion beam longer in the Y direction in the Z direction and provided with a plasma generating chamber, a plasma electrode which is disposed near the end of the plasma generating chamber in the Z direction and has an ion extracting port extending in the Y direction, a plurality of cathodes for emitting electrons into the plasma generating chamber to generate a plasma and arranged in a plurality of stages along the Y direction, and a magnetic coil which generates magnetic fields along the Z direction in a domain containing the plurality of cathodes inside the plasma generating chamber.

Abstract: It is an object of the present invention to provide a focused ion beam apparatus capable of prolonging a service life of an aperture, preventing contaminants from increasing when a column valve is closed, and being quickly restarted. A high-voltage power supply controller lowers an extraction voltage applied to an extraction electrode or lowers a control voltage applied to a control electrode to set an emission to 0 ?A when a column valve is closed. The high-voltage power supply controller returns the extraction voltage applied to the extraction electrode to an original extraction voltage or returns the control voltage applied to the control electrode to an original control voltage when a column valve is opened.

Abstract: A focused ion source based on a Hall thruster with closed loop electron drift and a narrow acceleration zone is disclosed. The ion source of the invention has an ion focusing system consisting of two parts. The first part is a ballistic focusing system in which the aperture through which the beam exits the discharge channel is tilted. The second is a magnetic focusing system which focuses the ion beam exiting the discharge channel by canceling a divergent magnetic field present at the aperture through which the beam exits the discharge channel. The ion source of the invention also has an in-line hollow cathode capable of forming a self-sustaining discharge. The invention further reduces substrate contamination, while increasing the processing rate. Further the configuration disclosed allows the ion source to operate at lower operational gas pressures.

Abstract: The charged-particle beam system includes a non-axisymmetric diode forms a non-axisymmetric beam having an elliptic cross-section. A focusing element utilizes a magnetic field for focusing and transporting the non-axisymmetric beam, wherein the non-axisymmetric beam is approximately matched with the channel of the focusing element.

Abstract: The invention is intended to increase the number of patients treatable using one wheel having a thickness varied in the rotating direction to change energy of an ion beam passing the wheel. Ion beam delivery equipment for irradiating an ion beam to a patient for treatment comprises a beam generator for producing and accelerating the ion beam, an beam delivery nozzle including a range modulation wheel which has a predetermined thickness distribution in the rotating direction and is rotated on a travel passage of the ion beam generated from the beam generator to control a range of the ion beam, and an irradiation controller for controlling the beam producing and accelerating operation of the beam generator in accordance with the phase of rotation of the range modulation wheel.

Abstract: An ion beam apparatus includes a plasma chamber with a grid assembly installed at one end of the plasma chamber and a plasma sheath controller disposed between the plasma chamber and the grid assembly. The grid assembly includes first ion extraction apertures. The plasma sheath controller includes second ion extraction apertures smaller than the first ion extraction apertures. When the plasma sheath controller is used in this configuration, the surface of the plasma takes on a more planar configuration adjacent the controller so that ions, extracted from the plasma in a perpendicular direction to the plasma surface, pass cleanly through the apertures of the grid assembly rather than collide with the sidewalls of the grid assembly apertures. A semiconductor manufacturing apparatus and method for forming an ion beam are also provided.

Abstract: Monotomic dopant ions for ion implantation are supplied from vapour of a species containing plural atoms of the desired dopant. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the vapour species to produce monatomic dopant ions in the plasma for implantation.

Abstract: Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.

Abstract: The charged-particle beam system includes a non-axisymmetric diode forms a non-axisymmetric beam having an elliptic cross-section. A focusing element utilizes a magnetic field for focusing and transporting the non-axisymmetric beam, wherein the non-axisymmetric beam is approximately matched with the channel of the focusing element.

Abstract: An electron beam source for use in an electron gun. The electron beam source includes an emitter terminating in a tip. The emitter is configured to generate an electron beam. The electron beam source further includes a suppressor electrode laterally surrounding the emitter such that the tip of the emitter protrudes through the suppressor electrode and an extractor electrode disposed adjacent the tip of the emitter. The extractor electrode comprises a magnetic disk whose magnetic field is aligned with an axis of the electron beam.

Abstract: An apparatus for producing a beam of charged particles is provided, which comprises an emitter (1, 2) and a switching device (3) adapted to switch between first, second and third beam current levels, wherein the beam current at said first current level is suitable for writing a pixel of an image on the surface of a sample, the beam current at said second current level is suitable for not writing a pixel on the surface of said sample, and the beam current at said third current level is lower than the beam current at the second current level.

Abstract: The invention relates to methods of controlling the effect of ions of an ionisable source gas that can react with interior surfaces of an arc chamber, by introducing ions of a displacement gas into the arc chamber, where the displacement gas ions are more chemically reactive with the material of the interior surfaces than the ions of the source gas. The source gas ions may typically be oxygen ions and the displacement gas ions are then typically fluorine ions where the interior surfaces comprise tungsten. The fluorine ions may, by way of example, be sourced from fluorine, silicon tetrafluoride or nitrogen trifluoride.

Abstract: This invention relates to an apparatus for processing particles. The apparatus comprises a particle source having an exist aperture; an extraction electrode located at the exist aperture; an acceleration electrode adjacent to the extraction electrode; a processing compartment adjacent to the acceleration electrode; and a deceleration electrode located adjacent to the processing compartment. The invention also relates to methods of processing particles and to particles processed by the apparatus and methods of the invention.

Abstract: There is described, for example, a generally cylindrical generator of energetic electrons that releases electrons from a vacuum enclosure into a surrounding space including into the atmosphere where the electrons may be used for a variety of applications including clean up of a flowing gas stream. Described is an efficient electron generator that emits more beam power than past structures in this class of devices and does so in connection with the treatment of gases or surfaces requiring treatment.

Abstract: The invention relates to a method and apparatus that can improve the lifetime and performance of an ion source in a cyclotron. According to one embodiment, the invention comprises an ion source tube for sustaining a plasma discharge therein. The ion source tube comprises a slit opening along a side of the ion source tube, wherein the slit opening has a width less than 0.29 mm. The ion source tube also comprises an end opening in an end of the ion source tube. The end opening is smaller than an inner diameter of the ion source tube and is displaced by 0–1.5 mm from a central axis of the ion source tube toward the slit opening. The plasma column is displaced 0.2 to 0.5 mm relative the slit opening. The ion source tube comprises a cavity that accommodates the plasma discharge. The invention also relates to a method for making an ion source tube.

Abstract: A multi-grid ion beam source has an extraction grid, an acceleration grid, a focus grid, and a shield grid to produce a highly collimated ion beam. A five grid ion beam source is also disclosed having two shield grids. The extraction grid has a high positive potential and covers a plasma chamber containing plasma. The acceleration grid has a non-positive potential. The focus grid is positioned between the acceleration grid and the shield grid. The combination of the extraction grid and the acceleration grid extracts ions from the plasma. The focus grid acts to change momentum of the ions exiting the acceleration grid, focusing the ions into a more collimated ion beam than previous approaches. In one embodiment, the focus grid has a large positive potential. In another embodiment, the focus grid has a large negative potential.