Abstract: A multi-grid ion beam source has an extraction grid, an acceleration grid, a focus grid, and a shield grid to produce a highly collimated ion beam. A five grid ion beam source is also disclosed having two shield grids. The extraction grid has a high positive potential and covers a plasma chamber containing plasma. The acceleration grid has a non-positive potential. The focus grid is positioned between the acceleration grid and the shield grid. The combination of the extraction grid and the acceleration grid extracts ions from the plasma. The focus grid acts to change momentum of the ions exiting the acceleration grid, focusing the ions into a more collimated ion beam than previous approaches. In one embodiment, the focus grid has a large positive potential. In another embodiment, the focus grid has a large negative potential.

Abstract: An electron beam gun comprises a beam waveguide and an accelerating anode fixed thereto. The accelerating anode is connected with the aid of high-voltage insulators and through a cathode plate to a cathode assembly. The cathode assembly comprises a linear hot cathode fixed with the aid of two cathode carriers and a focussing electrode which is coaxially arranged with respect to the linear hot cathode and encompasses it with the aid of a two-sided surface. The beam waveguide is separated from the accelerating anode with the aid of rack panels which rigidly fix the accelerating anode to the beam waveguide in such a way that a space is formed therebetween. In order to hermetically separate cathode and anode parts of the projector, the accelerating anode is provided with a plate rigidly connected thereto.

Abstract: A technique is provided for the alignment of an H/D puller for use in a cyclotron. One aspect of the technique comprises magnetically attaching a pair of feeler gages to an alignment tool for use in aligning the H/D puller. The magnetic retention of the feeler gages allows a field engineer to make the desired adjustments to align the H/D puller. Another aspect of the present technique provides for the H/D puller to include a replaceable tip such that the tip may be replaced without removing the H/D puller. Because the H/D puller is not removed and replaced, the alignment of the H/D puller to the ion source is maintained.

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract: A method and apparatus for generating membrane targets for a laser induced plasma is disclosed herein. Membranes are advantageous targets for laser induced plasma because they are very thin and can be readily illuminated by high-power coherent light, such as a laser, and converted into plasma. Membranes are also advantageous because illumination of the membrane with coherent light produces less debris and splashing than illumination of a thicker, solid target. Spherical membranes possess additional advantages in that they can be readily illuminated from variety of directions and because they can be easily placed (i.e. blown) into a target region for illumination by coherent light. Membranes are also advantageous because they can be formed from a liquid or molten phase of the target material. According to another embodiment, membranes can be formed from a solution in which the target materials are solvated.

Abstract: The positive and negative ion beam merging system extracts positive and negative ions of the same species and of the same energy from two separate ion sources. The positive and negative ions from both sources pass through a bending magnetic field region between the pole faces of an electromagnet. Since the positive and negative ions come from mirror image positions on opposite sides of a beam axis, and the positive and negative ions are identical, the trajectories will be symmetrical and the positive and negative ion beams will merge into a single neutral beam as they leave the pole face of the electromagnet. The ion sources are preferably multicusp plasma ion sources. The ion sources may include a multi-aperture extraction system for increasing ion current from the sources.

Abstract: The invention provides a system and method for controlling a source of liquid metal ions, the source comprises a tip a first electrode and a second electrode, the method includes the steps of: (i) maintaining the first electrode at a first voltage level range and maintaining the second voltage at a second voltage range, such as to extract metal ions formed on a tip of the source, during an active mode of operation of the source; and (ii) maintaining the first electrode at a third voltage level range and maintaining the second voltage at a fourth voltage level range, such as to substantially reduce an extraction of metal ions from the tip, during an idle mode of operation of the source. The third voltage level range and, alternatively or additionally, the fourth voltage level ranges does not include zero voltage level. The first voltage level range differs than the third voltage level range.

Abstract: A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3) by applying a high-frequency electric field, an orifice electrode (4) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (4) which serves as an anode and the grid electrode (5) which serves as a cathode, while the high-frequency electric field applied by the plasma generator is being interrupted, to accelerate negative ions in the plasma generated by the plasma generator and pass the accelerated negative ions through the orifices (4a) in the orifice electrode (4).

Abstract: A plasma generator generates positive ions and negative ions in a plasma. An ion extracting portion (4, 5) selectively extracts the generated positive ions and negative ions from the plasma, and accelerates the extracted ions in a predetermined direction. The positive ions and the negative ions are selectively applied to the workpiece (X). The plasma generator applies a high-frequency voltage to a process gas in a vacuum chamber for generating a plasma which is composed of positive ions and electrons from the process gas, and interrupts the high-frequency voltage for attaching the electrons to the residual process gas to generate negative ions. The application of the high-frequency voltage and the interruption of the high-frequency voltage are alternately repeated.

Abstract: An ion implanter has an ion source (10) and an ion beam extraction assembly (50) for extracting the ions. The extraction assembly (50) is a tetrode structure and one of the pairs of extraction electrodes (51) has left and right ports (54, 55) located in opposite sides of the ion beam emerging from the ion source (10). The left and right electrode ports (54, 55) are electrically isolated from each other and connected to independent voltage sources (210, 230). The ion implanter also has a baffle plate (60) at the entrance to a mass analyser (90) downstream of the extraction assembly (50). The baffle plate (60) is also split into two halves (60? and 60?). By measuring the beam current incident on the two halves (60?, 60?) of the baffle (60), the relative voltages supplied to the left and right electrode parts (54, 55) may be adjusted so as to steer the ion beam and adjust the angle of incidence of the longitudinal axis thereof relative to the input of the analysing magnet (90).

Abstract: A neutral particle beam processing apparatus comprises a process gas inlet port (11) for introducing a process gas into a vacuum chamber (1), a plasma generating chamber (2) for generating positive ions and electrons from the introduced process gas, and a negative ion generating chamber (3) for attaching electrons generated in the plasma generating chamber to the residual gas to generate negative ions. The neutral particle beam processing apparatus further comprises an ion extracting portion (4) for extracting the positive ions or the negative ions and accelerating the positive ions or the negative ions in a predetermined direction, and a neutralizing chamber (5) for neutralizing an ion beam generated by the ion extracting portion (4) to generate a neutral particle beam. The neutral particle beam generated in the neutralizing chamber (5) is applied to a workpiece (X).

Abstract: A neutral particle beam processing apparatus comprises a plasma generator for generating positive ions and/or negative ions in a plasma, a pair of electrodes (5, 6) involving the plasma generated by the plasma generator therebetween, and a power supply (102) for applying a voltage between the pair of electrodes (5, 6). The pair of electrodes (5, 6) accelerate the positive ions and/or the negative ions generated by the plasma generator. The positive ions and/or the negative ions are neutralized and converted into neutral particles while being drifted in the plasma between the pair of electrodes (5, 6) toward a workpiece (X). The accelerated neutral particles pass through one of the electrodes (6) and are applied to the workpiece (X).

Abstract: An apparatus and method for thrusting plasma, utilizing a Hall thruster with segmented electrodes along the channel, which make the acceleration region as localized as possible. Also disclosed are methods of arranging the electrodes so as to minimize erosion and arcing. Also disclosed are methods of arranging the electrodes so as to produce a substantial reduction in plume divergence. The use of electrodes made of emissive material will reduce the radial potential drop within the channel, further decreasing the plume divergence. Also disclosed is a method of arranging and powering these electrodes so as to provide variable mode operation.

Abstract: G2 electrode is mounted so as to be movable along the beam line and, optionally, perpendicular to it as well. G1 and G2 are curved with a constant gap between G1 and G2 in the radial direction (so that the two electrodes are concentric). This contrasts with the prior art where G1 and G2 were equidistantly spaced along the beam line direction instead. G1 is made re-entrant adjacent the slit so as to improve extraction efficiency from the plasma. Finally, a lens such as a quadrupole lens is formed downstream of G3.

Abstract: An electron beam apparatus is offered which is capable of being used optimally over a wide range of electron beam currents. A method of controlling this apparatus is also offered. The apparatus has an electron emitter for producing an electron beam. The beam is collimated or slightly converged (made a real-image mode beam) by the first condenser lens. As a result, the amount of the electron beam limited by the anode electrode can be reduced to a minimum. The excitation of the first condenser lens is fixed to parallel beam conditions and so movement of the virtual electron source is prevented. This can enhance the axial accuracy.

Abstract: The present invention mainly relates to an ion accelerator with significantly simplified construction, for accelerating an much larger amount of ions, wherein that a plasma-generating target 12, a vacuum chamber 16 for extracting ions from plasma generated from the plasma-generating target 12, and an ion linac 30 are connected in series, the vacuum chamber 16 is installed near an ion entrance of the ion linac 30, the ion accelerator also has a high voltage power supply boosting the vacuum chamber 16 to a desired voltage, and ions are directly injected from the vacuum chamber 16 to the ion linac 30.

Abstract: A scattering target constituting an electron spin analyzer is supported by a scattering target-holding member made of a conductive material from the outside of the space formed by an accelerating electrode and an electrode supporter. Then, the scattering target-holding member is supported in insulation by an insulation supporting member made of an insulating material. Moreover, a guiding member is provided so as to cover the periphery of the insulation supporting member for guiding the scattering target, the scattering target-holding member and the insulation supporting member.

Abstract: An oxygen ion containing plasma is generated using a hot filament ion source. The oxygen ions in the plasma come from an oxide source (e.g., a metal oxide) which has a lower free energy of formation than that of the filament metal oxide (e.g., WO3) at the operating temperatures of the ion source. Consequently, oxidation of the filament and other metal components of the arc chamber is limited, or even prevented. Thus, the invention can advantageously lead to longer filament lives as compared to certain conventional processes that generate oxygen plasmas using hot filament sources.

Abstract: An ion source for use in ion assisted deposition of films, has an ionization region, a gas supply supplying ionizable gas to the ionization region, a gas excitation system causing ionization of the gas, ion influencing means forming the ions into a current directed at a target, and an ion source controller controlling the ion source so as to intermittently produce the ion current.

Abstract: A hemisphere accelerating electrode has a double structure composed of an inner accelerating electrode and an outer accelerating electrode. The inner accelerating electrode has an inner introducing inlet and an inner opening, and the outer accelerating electrode has an outer introducing inlet and an outer opening. The aperture angle of the inner introducing inlet is preferably larger than that of the outer introducing inlet by 0.1-5 degrees. Then, the aperture angle of the inner opening is preferably larger than that of the outer opening by 0.1-5 degrees. Moreover, scattered electron detectors have correcting electrodes, respectively, and are arranged in the shifted directions from the introducing direction of electrons by 100-140 degrees.

Abstract: An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing an apparatus available time by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning for the apparatus, and so on. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source.

Abstract: Disclosed is an electron beam irradiating apparatus including an electron beam source; an accelerating unit for accelerating electrons emitted from the electron beam source; a deflecting unit for deflecting a highly energized electron beam generated by the accelerating unit in a scanning direction; a vacuum vessel accommodating the electron beam source, the accelerating unit, and the deflecting unit in a vacuum environment; a window foil for ejecting the electron beam from the vacuum environment into a gas environment; a crosspiece for adhering to and supporting the window foil; and a cooling block for shielding the crosspiece from the electron beam in areas that the electron beam intersects the crosspiece.

Abstract: A plasma processing system includes an automated electrode retention mechanism (130) for providing automated engagement of a source electrode (152) with a drive electrode (154). In addition, an automated electrode handling system (320) is provided that has the ability to remove a source electrode (152) from the electrode retention mechanism and replace it with a second source electrode (152′) that is stored in a staging area (340) outside the plasma processing system vacuum chamber. The system may operate automatically under program control of a computer system (200) coupled thereto.

Abstract: An ion source (10) for an ion implanter is provided, comprising: (i) an ionization chamber (14) defined at least partially by chamber walls (12), and having an inlet (45) into which a sputtering gas may be injected and an aperture (18) through which an ion beam (B) may be extracted; (ii) an ionizing electron source (44) for ionizing the sputtering gas to form a sputtering plasma; and (iii) a sputterable repeller (100). The sputterable repeller both (a) repels electrons emitted by the electron source, and (b) provides a source of sputtered material that can be ionized by the electron source. The sputterable repeller (100) comprises a slug (108) of sputterable material, and further comprises mounting structure (102, 104) for removably mounting the slug within the ionization chamber (14), so that the slug is made removably detachable from the mounting structure.

Abstract: An improved double chamber ion source comprising a plasma generating chamber, a charge exchange chamber and a divider structure therebetween. The charge exchange chamber includes magnetic shielding material to reduce exposure of interior components to magnetic field lines externally generated. The double compartment ion source further comprises inclusion of a heat shield and/or a cooling system to overcome deleterious effects caused by increased temperature in the plasma generating chamber. The divider structure has a plurality of apertures having a configuration to reduce surface area on the divider structure in the charge exchange chamber.

Abstract: An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing the time that an apparatus can be made available by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying a positive potential to the acceleration electrode in order to extract an ion beam, and a deceleration power supply for applying a negative potential to the deceleration electrode ion order to prevent ions from flowing into the ion source.

Abstract: A unique Hall-Current ion source apparatus is used for direct ion beam deposition of DLC coatings with hardness values greater than 10 GPa and at deposition rates greater than 10 Å per second. This ion source has a unique fluid-cooled anode with a shadowed gap through which ion sources feed gases are introduced while depositing gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. A method is described in which a substrate is disposed within a vacuum chamber, coated with a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively.

Abstract: An ion source for use in ion assisted deposition of films, has a ionisation region, a gas supply, supplying ionisable gas to the ionisation region, a gas excitation system causing ionisation of the gas, ion influencing means forming the ions into a current directed at a target, and an ion source controller controlling the ion source so as to intermittently produce the current.

Abstract: A vacuum processing apparatus performs processing such-as a pattern depiction with a charged beam within a process chamber evacuated to a high vacuum by an ion pump. The vacuum processing apparatus, which makes it possible to prevent the accuracy of the charged beam pattern depiction from being deteriorated by ions and electrons leaking from the ion pump, has a conductor and a voltage applying unit. The conductor is arranged in the vicinity of the suction port of the process chamber communicating with the ion pump such that the conductor is electrically insulated from the process chamber. The voltage applying unit imparts a potential differing from that of the process chamber to the conductor. Because of the potential difference between the conductor and the process chamber, the ions and electrons leaking from the ion pump are reflected or adsorbed by the conductor so as to suppress leakage of the ions and electrons into the process chamber.

Abstract: An electron accelerator includes a vacuum chamber having an electron beam exit window. The exit window is formed of metallic foil bonded in metal to metal contact with the vacuum chamber to provide a gas tight seal therebetween. The exit window is less than about 12.5 microns thick. The vacuum chamber is hermetically sealed to preserve a permanent self-sustained vacuum therein. An electron generator is positioned within the vacuum chamber for generating electrons. A housing surrounds the electron generator. The housing has an electron permeable region formed in the housing between the electron generator and the exit window for allowing electrons to accelerate from the electron generator out the exit window in an electron beam when a voltage potential is applied between the housing and the exit window.

Abstract: An enhanced electron source in most respects similar to a standard cathode assembly for an electron gun includes an electron emitter surrounded by a suppressor electrode, the emitted electrons passing through an extractor electrode. Additionally, the suppressor electrode includes a small ring shaped permanent magnet surrounding the opening in the suppressor electrode through which the emitter tip protrudes. The resulting magnetic field is aligned with the beam axis, and includes a tail which forms a very short focal length magnetic lens immediately following the emitter tip. This magnetic field collimates the electron beam before it enters the downstream electrostatic gun lens, thus increasing the effective angular intensity of the cathode assembly. The aberrations of this collimating lens are very low so that its useful brightness is not reduced. Also the influence of guns lens aberrations is reduced because a smaller aperture angle in the gun lens may be used to obtain higher beam current.

Abstract: A time-of-flight spectrometer comprises a quadrupole ion trap (10) as an ion source, a drift tube (11) defining a field-free drift space, an ion reflector (12) and an ion detector (13). The quadrupole ion trap (10) has two end-cap electrodes (22, 23) and a ring electrode (21). End-cap electrode (22) has a central hole (24) through which ions to be extracted can pass. High voltage power supplies (34, 35) and associated switching devices (32, 33) are provided to supply extraction voltages to the end-cap electrodes (22, 23). The extraction voltage supplied to end-cap electrode (22) has the opposite polarity to the extraction voltage supplied to the other end-cap electrode (23) being respectively negative and positive voltages for positive ion extraction and respectively positive and negative voltages for negative ion extraction. The magnitude of the extraction voltage supplied to electrode (23) is in the range from 0.5 to 0.8 that of the extraction voltage supplied to electrode (22).

Abstract: A low energy ion gun for ion beam processing. The ion gun includes a plasma chamber having an open ended, conductive, non-magnetic body, a first end of which is closed by a flat or minimally dished dielectric member and with electrodes at a second end thereof opposite the first end. The ion gun also has primary magnets arranged around the body for trapping electrons adjacent the wall of the plasma chamber in use of the ion gun and an r.f. induction device. The electrodes include multi-aperture grids arranged for connection to respective positive potential sources and positioned to contact the plasma in the plasma chamber. The apertures of the grids are aligned so that particles emerging from an aperture of a first one of the grids are accelerated through corresponding apertures of the other grids in the form of a beamlet. A plurality of beamlets forms a beam.

Abstract: A method for implanting negative hydrogen ions includes the following steps. Plasma containing hydrogen is generated. Negative hydrogen ions are generated in the plasma. An electric field is formed between the plasma and a substrate. Negative hydrogen ions from the plasma is accelerated by using the electric field so as to implant negative hydrogen ions into a predetermined depth of a substrate.

Abstract: An ion source (26) includes a plasma confinement chamber and a plasma electrode (70) forming a generally planar wall section of the plasma confinement chamber. The plasma electrode (70) has at least one opening (84, 86) for allowing an ion beam (88) to exit the confinement chamber and has a set of magnets (78, 80, 82) that generate a magnetic field extending across the openings (84, 86) in the plasma electrode (70). The openings (84, 86) in the plasma electrode (70) can be fashioned as elongated slots or circular openings aligned along the axis. The ion source (26) can further include a power supply (72) for negatively biasing the plasma electrode relative to the plasma confinement chamber and an insulator (74) for electrically insulating the plasma electrode (70). Cooling tubes can also be provided to transfer heat away from the magnets in the plasma electrode (70).

Abstract: An ionization gauge including a source of electrons; an open anode defining an anode volume, where the source of electrons is disposed outside the anode volume; a plurality of ion collector electrodes disposed within the anode volume; a plurality of axially extending anode support posts for supporting the open anode, the anode support posts being electrically connected to the open anode; and the plurality of ion collector electrodes being respectively located sufficiently close to the plurality of axially extending anode support posts so as to substantially repel the electrons from the anode support posts.