Induction Type Patents (Class 315/111.51)
  • Patent number: 11846011
    Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.
    Type: Grant
    Filed: November 2, 2022
    Date of Patent: December 19, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Shuran Sheng, Lin Zhang, Joseph C. Werner
  • Patent number: 11515122
    Abstract: This disclosure relates to a plasma processing system for VHF plasma processing using a transmission antenna designed to enable a resonant VHF standing wave inside a plasma process chamber used to manufacture semiconductor devices. The system includes a transmission element capable of being electromagnetically coupled to incoming power lines connected to a power source. The transmission element, power transmission lines, and power source form a resonant circuit capable of enabling a VHF standing wave on the transmission element. The transmission element is folded back on itself to reduce the footprint of the antenna, such that the transmission element(s) can be located inside the plasma process chamber. The transmission antenna has three portions, with the first being electromagnetically coupled to the power transmission line, the second being coupled to plasma, and the third being a folded portion that reduces the transmission element's footprint.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: November 29, 2022
    Assignee: Tokyo Electron Limited
    Inventor: Barton Lane
  • Patent number: 11328900
    Abstract: A plasma ignition circuit includes a transformer having a primary coil configured to couple an RF power supply. A first secondary coil is configured to couple a remote plasma source (RPS), and a second secondary coil. The plasma ignition circuit further includes a control switch having an input configured to couple the second secondary coil and an output configured to capacitively couple the RPS and a switch controller. The switch controller is configured to upon sensing a secondary RF voltage applied to the second secondary coil in response to an RF voltage applied by RF power supply to the primary coil, enable the control switch to capacitively apply the secondary RF voltage to the RPS to ignite a plasma within the RPS. Upon sensing a drop in plasma impedance when the plasma is ignited, disable the control switch to discontinue applying the secondary RF voltage to the RPS.
    Type: Grant
    Filed: February 17, 2020
    Date of Patent: May 10, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Teryl Pratt, Rongping Wang, Guomin Mao, Andy Chuang
  • Patent number: 11315758
    Abstract: In one embodiment, the present disclosure is directed to an RF impedance matching network that includes an electronically variable capacitor (EVC) and a control circuit. The control circuit is coupled to a sensor configured to detecting an RF parameter. To cause an impedance match between an RF source and a plasma chamber, the control circuit determines, using a match lookup table with a value based on the detected RF parameter, a match combination of a new EVC configuration for providing a new EVC capacitance, and a new source frequency for the RF source. The control circuit then alters the EVC to the new EVC configuration, and alters the variable frequency of the RF source to the new source frequency.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: April 26, 2022
    Inventor: Imran Ahmed Bhutta
  • Patent number: 11019713
    Abstract: A ballast transformer and system using the ballast transformer to couple power to a plasma load. The ballast transformer has a magnetic core, a first primary winding on a primary side of the magnetic core, a secondary winding on a secondary side of the magnetic core, and a second primary winding connected in series with the first primary winding and wound in proximity to the secondary winding on the secondary side of the magnetic core. The first primary winding is connectable to the AC power source, and the secondary winding is connectable to the plasma load via a coaxial cable.
    Type: Grant
    Filed: October 30, 2020
    Date of Patent: May 25, 2021
    Assignee: Atmospheric Plasma Solutions, Inc.
    Inventors: Peter J. Yancey, Terrence E. Rogers
  • Patent number: 11019714
    Abstract: A system for determining an operational state of an atmospheric pressure plasma. The system has a transformer for coupling power into the atmospheric pressure plasma, a current sampling circuit configured to sample at least one current pulse flowing through a primary winding of the transformer, and a programmed microprocessor configured to determine, from a waveform of the current pulse, the operational state of the atmospheric pressure plasma. The operational state is one of: a no plasma state, a plasma origination state indicative of an ignited arc expanding into a plasma by gas flow thereinto, and a plasma maintenance state indicative of the plasma being expanded.
    Type: Grant
    Filed: October 30, 2020
    Date of Patent: May 25, 2021
    Assignee: Atmospheric Plasma Solutions, Inc.
    Inventor: Terrence E. Rogers
  • Patent number: 10917065
    Abstract: A system and method for tuning an impedance network of a device is provided. An RF signal is provided through a transmission path connected to an impedance matching network that includes a first variable component and a second variable component. A phase angle between a forward signal and a reflected signal along the transmission path is determined. Based on the phase angle between the forward signal and the reflected signal, the first variable component is modified to improve an impedance match between the RF signal source and the electrode. After modifying the first variable component, a ratio of a power of the reflected signal to a power of the forward signal is determined, and an inductance of the second variable component is modified to reduce the ratio of a power of the reflected signal to a power of the forward signal.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: February 9, 2021
    Assignee: NXP USA, Inc.
    Inventors: Lionel Mongin, Pierre Marie Jean Piel, James Eric Scott
  • Patent number: 10847345
    Abstract: A direct drive circuit for providing RF power to a component of a substrate processing system includes a clock generator to generate a clock signal at a first frequency, a gate driver to receive the clock signal and a half bridge circuit. The half bridge circuit includes a first switch with a control terminal connected to the gate driver, a first terminal and a second terminal; a second switch with a control terminal connected to the gate driver, a first terminal connected to the second terminal of the first switch and an output node, and a second terminal; a first DC supply to supply a first voltage to the first terminal of the first switch; and a second DC supply to supply a second voltage to the second terminal of the second switch. The first and the second voltages have opposite polarities and are approximately equal in magnitude.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: November 24, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Maolin Long, Alexander Paterson
  • Patent number: 10674594
    Abstract: A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: June 2, 2020
    Assignee: Plasmology4, Inc.
    Inventor: Gregory A. Watson
  • Patent number: 10506700
    Abstract: In order to ensure quality even when a sheet-like base material is thin while improving efficiency of production, a plasma treatment apparatus disclosed herein includes a plasma treatment chamber X for treating a sheet-like base material Z with plasma, a high-frequency antenna 3 for generating plasma in the plasma treatment chamber X, and a feeding mechanism 10 for feeding the sheet-like base material Z into the plasma treatment chamber X in a vertical direction.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: December 10, 2019
    Assignee: Plasma Ion Assist Co., Ltd.
    Inventors: Yasuo Suzuki, Masayasu Tanjo
  • Patent number: 10373807
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: August 6, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Patent number: 10348129
    Abstract: An electric power supply system, to which the electric field coupling electric power transmission technology is applied, includes an electric power transmission electrode for transmitting electric power from an electric power source, an electric power reception electrode that is disposed so as to contactlessly face the electric power transmission electrode to form a junction capacitance, and receives the electric power transmitted from the electric power transmission electrode through the junction capacitance, and a plasma generation unit for generating a plasma in a space between the electric power transmission electrode and the electric power reception electrode in which the junction capacitance is formed.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: July 9, 2019
    Assignees: EXH CORPORATION, TOYO ALUMINIUM K.K., SUMIDA CORPORATION
    Inventor: Kenichi Harakawa
  • Patent number: 10332725
    Abstract: A substrate processing tool for processing a substrate includes a processing chamber including a substrate support. First and second coils are arranged outside of the processing chamber. Each of the first and second coils includes first and second conductors. A coil driving circuit drives current through the coils to generate plasma in the processing chamber. A coil reversing circuit is configured to selectively reverse a polarity of current flowing through the first and second conductors of the first coil. The coil reversing circuit includes an H-bridge circuit.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: June 25, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Arthur H. Sato, Maolin Long, Alex Paterson
  • Patent number: 10298046
    Abstract: In a charging method of controlling output voltages, a controller acquires first mapping relation that is a one-to-one mapping relation between at least two adjustment strategies and at least two duty cycles. Each of the adjustment strategies comprises indication information of an adjustment direction of an output voltage of a power converter. The controller determines a first adjustment strategy. The controller generates a pulse width modulation (PWM) signal based on the first adjustment strategy and the first mapping relation. The duty cycle of the PWM signal is one of the at least two duty cycles indicated by the first mapping relation and corresponds to the first adjustment strategy. The controller transmits the PWM signal such that the adjustment direction of the output voltage of the power converter corresponds to the first adjustment strategy.
    Type: Grant
    Filed: May 9, 2016
    Date of Patent: May 21, 2019
    Assignee: Guangdong Oppo Mobile Telecommunications Corp., Ltd.
    Inventors: Shebiao Chen, Jun Zhang, Chen Tian, Bo Yang, Jialiang Zhang
  • Patent number: 10263526
    Abstract: A system includes a boost circuit, a capacitive circuit, and a converter circuit. The boost circuit receives a DC signal at a first DC voltage and generates an intermediate AC signal at a first AC voltage based on the DC signal. The capacitive circuit receives the intermediate AC signal at the first AC voltage and generates an isolated AC signal at the first AC voltage based on the intermediate AC signal at the first AC voltage. The converter circuit receives the isolated AC signal at the first AC voltage; generates a first isolated DC signal at a second DC voltage based on the isolated AC signal at the first AC voltage; and generates a second isolated DC signal at a third DC voltage based on the first isolated DC signal at the second DC voltage. The third DC voltage may be less than the second DC voltage.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: April 16, 2019
    Assignee: Smart Prong Technologies, Inc.
    Inventors: Randall L. Sandusky, Neaz E. Farooqi, Kenson Tamotsu Harada
  • Patent number: 10211802
    Abstract: A positioning device for a radio frequency matcher comprises mainly a micro controller, and at least two detecting elements connected to the micro controller. The detecting elements are disposed on electric motors to detect the rotation angles of the electric motors. When the electric motors adjust the positions of the moving pieces of the tuning elements based on the volume of error signals to change the electrical reactance values so that they may approximately meet the requirement of the radio frequency load and that the radio frequency load may achieve a highest possible power, the micro controller may interpret the signals of the rotation angle detecting elements and output the interpreted values for a user to determine whether the moving pieces of the tuning elements are at right positions to approximately meet the requirement of the radio frequency load and maximize the power of the radio frequency load of the radio frequency matcher.
    Type: Grant
    Filed: September 5, 2016
    Date of Patent: February 19, 2019
    Assignee: FairTech Corporation
    Inventor: Jui-Pao Pan
  • Patent number: 10199201
    Abstract: A plasma source is provided. The plasma source includes a chamber body, a supply passage, a vacuum connector, an antenna, a first insulator, a second insulator, and a conductor. The chamber body has an opening for emitting ions or electrons. The supply passage penetrates through a first peripheral wall of the chamber body. The vacuum connector is provided in a second peripheral wall of the chamber body at a position opposed to the opening. The antenna has a base end connected to the vacuum connector, and extends inside the chamber body toward the opening. The first insulator covers a first region of the antenna at a distal end of the antenna inside the chamber body. The second insulator covers a second region of the antenna at the base end of the antenna inside the chamber body. The conductor covers the second insulator.
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: February 5, 2019
    Assignee: NISSIN ION EQUIPMENT CO., LTD.
    Inventors: Hideki Fujita, Suguru Itoi
  • Patent number: 10170278
    Abstract: Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: January 1, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Andrew Nguyen, Kartik Ramaswamy, Yang Yang, Steven Lane
  • Patent number: 10115569
    Abstract: Provided is a plasma generator for improving uniformity of plasma. The plasma generator which includes a pair of source electrode unit 110 and bias electrode unit 120 disposed to face each other in a vacuum chamber and an RF power unit 132 and a bias RF power unit 142 supplying RF power to the source electrode unit 110 and the bias electrode unit 120, respectively, comprises a common contact point cc which is connected with a plurality of contact points cp disposed along the edge of the source electrode unit 110; and an impedance controller 150 which is connected with the common contact point cc to control the impedance.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: October 30, 2018
    Assignee: JEHARA CORPORATION
    Inventor: Hongseub Kim
  • Patent number: 10079134
    Abstract: The present disclosure provides an inductively coupled plasma device, comprising a reaction chamber, a dielectric coupling plate, and a coil above the dielectric coupling plate. The dielectric coupling plate comprises at least two layers. The dielectric coupling plate comprises a plurality of regions, each region being provided with an electric field regulating structure, the electric field regulating structure being located between the at least two layers of the dielectric coupling plate. The electric field regulating structure is configured to regulate an intensity of an electric field that enters the reaction chamber through each region of the dielectric coupling plate.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: September 18, 2018
    Assignees: BOE TECHNOLOGY GROUP CO. LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Yu Wei, Jun Liu
  • Patent number: 10079133
    Abstract: A plasma processing device includes: a chamber; a flat-plate-shaped first electrode; a first high frequency power supply; a helical second electrode disposed outside the chamber and disposed to face the first electrode with a quartz plate forming an upper lid of the chamber therebetween; and a gas introducing unit, in which a second high frequency power supply and a third high frequency power supply are configured to be electrically connected to the second electrode, the second high frequency power supply being configured to apply an AC voltage of a second frequency to the second electrode, the third high frequency power supply being configured to apply an AC voltage of a third frequency to the second electrode, and the third frequency being higher than the second frequency; and two types of AC voltages are configured to be simultaneously applied.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: September 18, 2018
    Assignee: ULVAC, INC.
    Inventors: Takahide Murayama, Yasuhiro Morikawa, Toshiyuki Sakuishi
  • Patent number: 9947511
    Abstract: Provided are an antenna, which is disposed in a vacuum chamber for generating an inductively coupled plasma, and a plasma processing device. The antenna and the plasma processing device suppress increase of the impedance even if the antenna is lengthened. An antenna 20 is disposed in a vacuum chamber 2 for generating an inductively coupled plasma 16 in the vacuum chamber 2 by applying a high frequency current. The antenna 20 includes an insulating pipe 22 and a hollow antenna body 24 which is disposed in the insulating pipe 22 and in which cooling water flows. The antenna body 24 has a structure that a plurality of metal pipes 26 are connected in series with a hollow insulator 28 interposed between the adjacent metal pipes 26, and each connecting portion has a sealing function with respect to vacuum and the cooling water.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: April 17, 2018
    Assignee: NISSIN ELECTRIC CO., LTD.
    Inventors: Yasunori Ando, Dongwei Li
  • Patent number: 9876482
    Abstract: A matching unit includes a directional coupler for detecting a travelling wave and a reflected wave; a matching circuit including a first variable capacitance capacitor, a second variable capacitance capacitor and an inductance; and a control unit for controlling VC1 and VC2 of the first and the second variable capacitance capacitor by calculating a reflection coefficient based on the travelling wave and the reflected wave. When a distance between the calculated reflection coefficient and a circle described by a trace of the reflection coefficient which passes through a matching point on a Smith chart is greater than a predetermined value, the control unit changes VC2 of the second variable capacitance capacitor and the calculated reflection coefficient to make the distance within the predetermined value. When the distance becomes within the predetermined value, the control unit changes VC1 of the first variable capacitance capacitor and makes the calculated reflection coefficient smaller.
    Type: Grant
    Filed: February 24, 2015
    Date of Patent: January 23, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Manabu Nakamura, Naoya Fujimoto, Norikazu Kato, Yoshiyuki Oshida, Naoto Takahashi
  • Patent number: 9750121
    Abstract: A power supply apparatus outputs an alternating-current voltage to a plasma generator being a capacitive load and the power supply apparatus has a configuration that a transformer included in the power supply apparatus has a secondary-side magnetizing inductance more than five times as great as a leakage inductance.
    Type: Grant
    Filed: October 4, 2013
    Date of Patent: August 29, 2017
    Assignee: Toshiba Mitsubishi-Electric Industrial Systems Corporation
    Inventors: Yoichiro Tabata, Yujiro Okihara, Noriyuki Nakamura, Shinichi Nishimura
  • Patent number: 9646806
    Abstract: Provided are a plasma electrode device and a manufacturing method thereof. The plasma electrode device includes a first substrate including a first substrate main body having a first flow hole through which air flows and a first discharge electrode disposed on one surface of the first substrate main body and a second substrate disposed on one side of the first substrate, the second substrate including a second flow hole through which air flows and a second discharge electrode acting with the first substrate. The first substrate main body includes a ground electrode acting with the first or second discharge electrode to perform plasma discharge and a first insulator coupled to the ground electrode.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: May 9, 2017
    Assignee: LG ELECTRONICS INC.
    Inventors: Jaesoo Jang, Bongjo Sung
  • Patent number: 9496121
    Abstract: Provided is a substrate treating apparatus, which includes a process chamber having an inner space, a substrate support part disposed within the process chamber, and supporting a substrate, a gas supply part supplying a process gas into the process chamber, an antenna configured to supply high frequency power into the process chamber to excite the process gas within the process chamber, and a driving part varying a size of the antenna.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: November 15, 2016
    Assignee: Semes Co., Ltd.
    Inventors: Hyung Joon Kim, Hyung Je Woo
  • Patent number: 9453280
    Abstract: A film deposition apparatus includes a turntable having a substrate mounting area, a first plasma gas supplying part, a second plasma supplying part, a first plasma gas generating part to convert the first plasma generating gas to first plasma, and a second plasma generating part provided away from the first plasma generating part in a circumferential direction and to convert the second plasma generating gas to second plasma. The first plasma generating part includes an antenna facing the turntable so as to convert the first plasma generating gas to the first plasma, and a grounded Faraday shield between the antenna and an area where a plasma process is performed, and to include plural slits respectively extending in directions perpendicular to the antenna and arranged along an antenna extending direction to prevent an electric field from passing toward the substrate and to pass a magnetic field toward the substrate.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: September 27, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hitoshi Kato, Katsuyuki Hishiya, Shigehiro Ushikubo
  • Patent number: 9320126
    Abstract: Systems and methods for determining a value of a variable on a radio frequency (RF) transmission model are described. One of the methods includes identifying a complex voltage and current measured at an output of an RF generator and generating an impedance matching model based on electrical components defined in an impedance matching circuit coupled to the RF generator. The method further includes propagating the complex voltage and current through the one or more elements from the input of the impedance matching model and through one or more elements of an RF transmission model portion that is coupled to the impedance matching model to determine a complex voltage and current at the output of the RF transmission model portion.
    Type: Grant
    Filed: December 17, 2012
    Date of Patent: April 19, 2016
    Assignee: Lam Research Corporation
    Inventors: John C. Valcore, Jr., Bradford J. Lyndaker
  • Patent number: 9313872
    Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: April 12, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yohei Yamazawa, Chishio Koshimizu, Kazuki Denpoh, Jun Yamawaku, Masashi Saito
  • Patent number: 9257264
    Abstract: A gas cartridge is described that is configured to provide sufficient gas to support cold plasma generation for a specific medical process. The gas cartridge has a seal that is pierced upon connection of the gas cartridge to the cold plasma delivery system. Different embodiments are described that use different connection locations between the gas cartridge and the cold plasma delivery system. A shroud is also described that shields the user if the cold plasma delivery system is dropped and the gas cartridge ruptures. Use of an ID system assists in ensuring that the correct gas mixture, correct gas cartridge and correct power supply settings are used for the particular medical treatment process.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: February 9, 2016
    Assignee: Plasmology4, Inc.
    Inventors: Robert M. Hummel, Gregory A. Watson, Marc C. Jacofsky, David J. Jacofsky
  • Patent number: 9224580
    Abstract: An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) comprising a primary source chamber (15) and a first coil (4) for generating plasma in the primary source chamber, a secondary plasma source (25) comprising a secondary source chamber (16) and a second coil (26) for enhancing plasma generated by the primary plasma source and/or generating plasma in the secondary source chamber generating plasma in the primary source chamber, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to the secondary plasma source, and an outlet (14) for emitting at least a portion of the plasma generated by the arrangement.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: December 29, 2015
    Assignee: MAPPER LITOHGRAPHY IP B.V.
    Inventors: Marc Smits, Chris Franciscus Jessica Lodewijk
  • Patent number: 9167680
    Abstract: A plasma processing apparatus includes: a mounting table, disposed in a processing chamber, configured to mount thereon the substrate; an inductively coupled antenna disposed outside the processing chamber to be opposite to the mounting table, the inductively coupled antenna being connected to a high frequency power supply; and a window member forming a wall of the processing chamber which faces the inductively coupled antenna. The window member includes a plurality of conductive windows made of a conductive material, and dielectric portions disposed between the conductive windows. The inductively coupled antenna is extended in a predetermined direction on the window member and electrically connected to one of the conductive windows, and electrical connection by conductors is sequentially performed from the one of the conductive windows to the other conductive windows in the same direction as an extension direction of the inductively coupled antenna.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: October 20, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yohei Yamazawa, Takafumi Kimura, Chishio Koshimizu
  • Patent number: 9137884
    Abstract: The present invention discloses an apparatus for plasma processing comprising of a chamber for plasma processing with an external wall, and at least one induction coil for providing a radio frequency induction field that is adjacent to the chamber. It further includes an end terminal of the induction coil that is connected to a radio frequency power supply, another end terminal of the induction coil that is open-ended, and a grounded terminal of the induction coil that is located at substantially central position of the induction coil.
    Type: Grant
    Filed: November 29, 2006
    Date of Patent: September 15, 2015
    Assignee: Lam Research Corporation
    Inventors: Georgy K. Vinogradov, Vladimir M. Menagarishvili
  • Patent number: 9082592
    Abstract: There is provided a plasma processing apparatus for performing a plasma process on a substrate mounted on a mounting table in a processing chamber by generating inductively coupled plasma within the processing chamber by applying a high frequency power to a high frequency antenna. The apparatus includes a multiple number of gas nozzles protruding from a sidewall of the processing chamber toward a center of the processing chamber in a space above the mounting table, and each gas nozzle has a gas discharge hole at a leading end of the gas nozzle in a protruding direction and a gas discharge hole at a sidewall of the gas nozzle. Further, the apparatus includes a rotation device configured to rotate each of the gas nozzles on each central axis of the gas nozzles and each central axis is extended in the protruding direction of each of the gas nozzles.
    Type: Grant
    Filed: June 14, 2011
    Date of Patent: July 14, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Masashi Saito
  • Patent number: 9076626
    Abstract: A plasma source apparatus for generating a beam of charged particles is disclosed.
    Type: Grant
    Filed: May 20, 2013
    Date of Patent: July 7, 2015
    Assignee: THE WELDING INSTITUTE
    Inventors: Colin Ribton, Allan Sanderson
  • Patent number: 9078336
    Abstract: The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber.
    Type: Grant
    Filed: March 3, 2009
    Date of Patent: July 7, 2015
    Assignee: EMD CORPORATION
    Inventors: Yuichi Setsuhara, Akinori Ebe
  • Patent number: 9067273
    Abstract: Disclosed is an atmospheric pressure plasma jet device for use in a variety of applications. The disclosed system can include a conduit tubing array that includes multiple individual tubes configured in a honeycomb structure. By altering the linear velocity of the system's gas source, the system can produce multiple non-thermal atmospheric plasma jets that can interact in such a way as to create a single plasma jet as opposed to multiple collimated plasma jets. The single jet formed by the interaction of the multiple conduits can exhibit an increased optical intensity and energy compared to either a plasma jet emitted from a single conduit or well-collimated plasma jets emitted from multiple conduits.
    Type: Grant
    Filed: May 14, 2013
    Date of Patent: June 30, 2015
    Assignee: Clemson University
    Inventors: Sung-O Kim, Jae-Young Kim
  • Publication number: 20150144264
    Abstract: Provided are a plasma generating apparatus using mutual inductive coupling and a substrate treating apparatus including the same. According to an embodiment of the present invention, a plasma generating apparatus includes: an RF power supply providing an RF signal; a plurality of electromagnetic field applying units inducing an electromagnetic field by receiving the RF signal; and a reactance element connected to a ground terminal of the electromagnetic field applying unit, wherein each of the electromagnetic field applying units may include a plurality of mutually-inductively coupled coils.
    Type: Application
    Filed: October 17, 2014
    Publication date: May 28, 2015
    Inventors: Hee Sun CHAE, Jeong Hee CHO, Jong Sik LEE, Han Saem RHEE, Hyun Jun KIM
  • Patent number: 9035553
    Abstract: A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including an inductive antenna inductively coupled to plasma formed in the plasma discharge space and a primary winding coil transformer coupled to the plasma and wound in a magnetic core; and an alternating switching power supply for supplying plasma generation power to the inductive antenna and the primary winding coil. The hybrid plasma reactor induces a plasma discharge using the inductively coupled plasma source and the transformer coupled plasma source, so that it has a wide operational area from a low pressure area to a high pressure area.
    Type: Grant
    Filed: November 9, 2012
    Date of Patent: May 19, 2015
    Inventor: Dae-Kyu Choi
  • Publication number: 20150108898
    Abstract: Certain embodiments described herein are directed to generators that can be used to sustain a plasma in a driven mode and in an oscillation mode and optionally in a hybrid mode. In some embodiments, the generator is configured to switch between the two modes during operation. In certain instances, the plasma may be ignited when the generator is in a driven mode and may be used to analyze samples when the generator is in an oscillation mode or driven mode or hybrid mode.
    Type: Application
    Filed: October 22, 2014
    Publication date: April 23, 2015
    Inventors: Tak Shun Cheung, Chui Ha Cindy WONG
  • Patent number: 9006976
    Abstract: A compact cold plasma device for generating cold plasma having temperatures in the range 65 to 120 degrees Fahrenheit. The compact cold plasma device has a magnet-free configuration and an induction-grid-free configuration. An additional configuration uses an induction grid in place of the input electrode to generate the cold plasma. A high voltage power supply is provided that includes a controllable switch to release energy from a capacitor bank to a dual resonance RF transformer. A controller adjusts the energy input to the capacitor bank, as well as the trigger to the controllable switch.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: April 14, 2015
    Assignee: Plasmology4, Inc.
    Inventors: Gregory A. Watson, Robert M. Hummel, Marc C. Jacofsky, David J. Jacofsky
  • Patent number: 9006975
    Abstract: Described herein is a method and apparatus for removing metal oxides on a surface of a component via electron attachment. In one embodiment, there is provided a field emission apparatus, wherein the electrons attach to at least a portion of the reducing gas to form a negatively charged atomic ions which removes metal oxides comprising: a cathode comprising an electrically conductive and comprising at least one or more protrusions having a high surface curvature, wherein the cathode is surrounded by a dielectric material which is then surrounded by an electrically conductive anode wherein the cathode and anode are each connected to an electrical voltage source, and the dielectric material between the cathode and anode is polarized to provide an electric field at one or more protrusions and thereby electrons from the cathode.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: April 14, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Chun Christine Dong, Russell A. Siminski
  • Patent number: 8994271
    Abstract: A device for generating a cold, HF-excited plasma under atmospheric pressure conditions can be used advantageously for plasma treatment of materials for cosmetic and medical purposes. The device contains a metal housing functioning as a grounded electrode in the region of the emergent plasma, wherein an HF generator, an HF resonance coil having a closed ferrite core suitable for the high frequency, an insulating body acting as a gas nozzle, and a high-voltage electrode mounted in the insulating body are disposed in such a manner that they are permeated or circulated around by process gas. By integrating the plasma nozzle and required control electronics in a miniaturized handheld device, or by using a short high-voltage cable, the invention allows compliance with the electromagnetic compatibility directives and allows the power loss to be minimized and thus a mobile application to be implemented.
    Type: Grant
    Filed: July 31, 2010
    Date of Patent: March 31, 2015
    Assignee: Leibniz—Institut fuer Plasmaforschung und Technologie E. V.
    Inventors: Eckhard Kindel, Norbert Lembke, Manfred Stieber, Ruediger Titze, Klaus-Dieter Weltmann, Lutz Hellwig
  • Patent number: 8975817
    Abstract: A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an upper surface of the at least one heat pipe; and wherein the variable internal pressure within the at least one pressure controlled heat pipe during heating of the showerhead electrode by the heater plate displaces the heat transfer liquid from a thermal path between the top plate and the heater plate, and when removing excess heat from the showerhead electrode returns the heat transfer liquid to the thermal path.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: March 10, 2015
    Assignee: Lam Research Corporation
    Inventors: Michael C. Kellogg, Rajinder Dhindsa, Tom Stevenson
  • Patent number: 8963044
    Abstract: Plasma jet assemblies are provided. A plasma jet assembly may include: a tube through which a gas flows; a power source providing a high frequency power exciting the gas in plasma state; a power electrode applying the high frequency power to the gas; and a plasma control unit removing arc discharge of a plasma gas generated in the tube by the high frequency power applied to the power electrode.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: February 24, 2015
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Yark Yeon Kim, Han Young Yu, Yong Ju Yun, Won Ick Jang, Eun-ju Jeong, Changho Han
  • Patent number: 8922127
    Abstract: Provided is a compact ignition coil apparatus that can realize reliable insulation breakdown and spark discharge with high discharge current. A high-frequency discharge ignition coil apparatus includes: a capacitor 116 connected to a high-voltage terminal, for preventing passage of high voltage; and an inductor 117 connected to the capacitor 116 and forming, together with the capacitor 116, a band pass filter that allows only a predetermined frequency component to pass. High-frequency current is supplied from outside to the inductor 117. The high-frequency discharge ignition coil apparatus further includes a current level detection device 115 for detecting the level of current flowing in the inductor 117. The current level detection device 115 is placed in one package, together with a primary coil 111, a secondary coil 112, a capacitor 116, and an inductor 117.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: December 30, 2014
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kimihiko Tanaya, Naoki Itoi
  • Patent number: 8917022
    Abstract: A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.
    Type: Grant
    Filed: May 21, 2009
    Date of Patent: December 23, 2014
    Assignees: EMD Corporation, Yasunori Ando
    Inventors: Akinori Ebe, Yasunori Ando, Masanori Watanabe
  • Publication number: 20140354154
    Abstract: A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.
    Type: Application
    Filed: August 18, 2014
    Publication date: December 4, 2014
    Inventor: Gregory A. WATSON
  • Patent number: 8901820
    Abstract: A plasma processing apparatus and method are disclosed which allows switching between the E and H operation modes and also increase the coupling efficiency of the RF power to the plasma. This apparatus may increase plasma density by a factor of about 1.25-1.65 for a given power output. Simultaneously, due to the high efficiency, the need to cool the antenna may be eliminated. A new antenna geometry which increases the amount of surface area for a given volume is used to take advantage of skin effects associated with RF electric current. In some embodiments, the antenna has a single turn to reduce proximity effects. The antenna may also be embedded in a ferrite material to further optimize its performance.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: December 2, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Costel Biloiu, Craig Chaney
  • Patent number: RE45280
    Abstract: A segmented transformer coupled plasma (TCP) coil is provided as a source for generating a uniform plasma in a plasma reactor. The segmented TCP is divided into two or more segment coils which, when connected to an RF source, produces a circulating flow of electrons to cause a magnetic field in the plasma. Because the segmented TCP employs multiple segment coils, a plasma is generated that is more spatially uniform than the plasma produced by a monolithic coil. This is implemented using a power distributing component that allows the RF current to be distributed in the segment coils such that a uniform plasma density can be obtained in an area spanned by the coils. For instance, variable shunts, switchable shunts, and disconnect switches can be used to vary the RF currents in the individual coils.
    Type: Grant
    Filed: March 22, 2000
    Date of Patent: December 9, 2014
    Assignee: Lam Research Corporation
    Inventor: Duane Charles Gates