Abstract: The closed electron drift plasma accelerator comprises an annular ionization chamber, an acceleration chamber on the same axis as the ionization chamber, an annular anode, a hollow cathode, a first DC voltage source, an annular gas manifold, a magnetic circuit, and magnetic field generators. A coaxial annular coil is placed in the cavity of the ionization chamber, is provided with bias conductive cladding connected, together with the electrically-conductive material of the inside faces of the walls of the ionization chamber, to the positive pole of a second voltage source whose negative pole is connected to the anode, and constitutes an additional magnetic field generator which, together with the other magnetic field generators, forms a magnetic field having a magnetic line of force with an “X” point corresponding to a magnetic field zero situated between the coaxial annular coil and the anode.

Abstract: Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: A plasma CVD apparatus in which microwave power is supplied into a reaction chamber provided inside an annular waveguide through an antenna provided on the inner peripheral part of the waveguide to produce a plasma inside the reaction chamber and to form a film by a vapor growth synthesizing method. A cooler is disposed between the annular waveguide and the reaction chamber to maintain the low temperature of the annular waveguide.

Abstract: A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.

Abstract: The invention relates to an inductive thermal plasma torch comprising a confinement tube that comprises, longitudinally in relation to the tube, metal fingers which are insulated from each other, an ignition device that comprises an igniter (4) and an igniter support (1, 3), the purpose of the igniter (4) being to initiate a discharge in the plasma of the torch, the support having an electrically conductive end (1) which is connected to the electrical earth (2) of the plant and another, electrically insulating, end (3) which carries the igniter, the ignition device also comprising an electrically conductive connection (5) connecting the igniter (4) to the electrically conductive end (1) of the support so that the igniter is able to initiate the discharge in the plasma, the electrically conductive connection (5) having a section that is sufficiently narrow to limit the intensity of the current capable of passing through the igniter (4) in order to avoid electrical arcing by capacitive discharge between the ign

Abstract: The invention features RF plasma generation systems, methods for operating the systems, methods for calibrating the systems, and calibration apparatus. One RF plasma generation system includes an impedance matching network having an input port to receive an RF signal from an RF generator, and an output port to deliver the RF signal to an input port of a plasma vessel associated with a load. The system includes an RF signal probe in electromagnetic communication with the input port of the impedance matching network to detect at least one RF signal parameter associated with the RF signal at the input port of the impedance matching network. The system can include a calibration storage unit that stores calibration data. The calibration data includes an association of values of the RF signal parameter with values of at least one characteristic of the load.

Abstract: A reactive circuit is disclosed as part of a method and system for generating high density plasma that does not require the use of a dynamic matching network for directly driving a plasma exhibiting a dynamic impedance. The reactive network is designed to provide a small total reactance when the plasma reactance is at a first plasma reactance and presents a reactance that does not exceed a specified limit at a second plasma reactance. The first and second plasma reactance span a substantially fraction of an expected dynamic plasma reactance range. The first and second plasma reactance values may, for example, correspond to a high expected plasma reactance limit and a low expected plasma reactance limit respectively or the first plasma reactance may correspond to an average expected plasma reactance.

Abstract: An inductively coupled plasma generator having a lower aspect ratio reaction gas, comprising a chamber having a gas inlet through which a reaction gas is supplied, a vacuum pump for maintaining the inside of the chamber vacuum and a gas outlet for exhausting the reaction gas after completion of the reaction, a chuck for mounting a target material to be processed inside the chamber, and an antenna to which high-frequency power is applied, the antenna provided at the upper and lateral portions of the chamber, wherein the antenna has parallel antenna elements in which a discharge of a high frequency can be allowed and impedance is low to ensure a low electron temperature, the antenna is disposed such that a powered end of each of the antenna elements and a ground end of each of the antenna elements opposite to the powered end are symmetrical in view of the center of an imaginary circle formed by the antenna to establish rotation symmetry of plasma density profiles, the antenna elements are twisted in a helical m

Abstract: An RF driver circuit and an orthogonal antenna assembly/configuration, are disclosed as part of a method and system for generating high density plasma. The antenna assembly is an orthogonal antenna system that may be driven by any RF generator/circuitry with suitable impedance matching to present a low impedance. The disclosed RF driver circuit uses switching type amplifier elements and presents a low output impedance. The disclosed low-output impedance RF driver circuits eliminate the need for a matching circuit for interfacing with the inherent impedance variations associated with plasmas. Also disclosed is the choice for capacitance or an inductance value to provide tuning for the RF plasma source. There is also provided a method for rapidly switching the plasma between two or more power levels at a frequencies of about tens of Hz to as high as hundreds of KHz.

Abstract: A novel pulsed, neutralized ion beam source is provided. The source uses pulsed inductive breakdown of neutral gas, and magnetic acceleration and control of the resulting plasma, to form a beam. The beam supplies ions for applications requiring excellent control of ion species, low remittance, high current density, and spatial uniformity.

Abstract: There is provided a secondary reactive termination circuit connected between the output of the RF power generator and the input of the plasma chamber to allow the tight regulation or limiting of the voltage and current components of the secondary frequencies within the process plasma. The secondary reactive circuit controls the impedance of the match network designed primarily to operate at the fundamental frequency of the RF power generator as seen by secondary frequencies in the system. Power delivery components are measured at the connection point of the termination circuit and used as feedback signals to control variable values of the termination circuit components.

Abstract: A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 1010 ions/cm3 and negative ions from the gas. The beam source also includes a plasma potential adjustment electrode disposed in the plasma generating chamber and a grid electrode having a plurality of beam extraction holes formed therein. The beam extraction holes have a diameter of at least 0.5 mm. The beam source has a first power supply for applying a voltage of at most 500 V between the plasma potential adjustment electrode and the grid electrode.

Abstract: Apparatus including a chamber and a coil system for converting a field-generating current into a RF magnetic field in the chamber when the chamber contains an ionized gas which interacts with the RF magnetic field to create a plasma. The plasma is contained within a cylindrical region enclosed by the chamber, which region has a longitudinal center axis, and the region is considered to be made up of a plurality of annular zones concentric with the center axis and disposed at respectively different distances from the center axis. The coil system is composed of: a plurality of individual coils each positioned and dimensioned to produce a RF magnetic field which predominantly influences a respective annular zone.

Abstract: The invention relates to a method and an apparatus for plasma welding. A free microwave-induced plasma jet is generated by the following steps. Microwaves are generated in a high-frequency microwave source. The microwaves are guided in a wave guide. A process gas is introduced at a pressure of p?1 bar into a microwave-transparent tube, which comprises a gas inlet opening and a gas outlet opening, the process gas being introduced through the gas inlet opening into the microwave-transparent tube in such a way that it has a tangential flow component. A plasma is generated in the microwave-transparent tube by electrodeless ignition of the process gas. The plasma jet is produced by the introduction of the plasma into a working space through a metallic expansion nozzle arranged at the gas outlet opening of the tube.

Abstract: A problem is to provide a microspray column capable of increasing the ionization efficiency, and a high sensitive mass spectrometer and a mass spectrometric method using such a microspray column. For solving this problem, we provide a column for introducing a sample in an ionization source of a mass spectrometer (ESI/MS) being designed to ionize a sample molecule with electrospray and introduce it into an analyzer, has structural features of: (1) 0.5 ?m or less in an inner diameter of a tip opening of the column; (2) 0.5 ?m or more and 5 ?m or less in a particle size of a column filler; and (3) fritless, a microspray column having the above (1) to (3), a mass spectrometer having such a microspray column in an ionization source, and a mass spectrometric method capable of performing a nonoflow electrospray with the microspray column.

Abstract: A method is provided for generating plasma using a plasma generator system. The method includes the steps of introducing energy and a reactant to a plasma generation apparatus of the plasma generator system for generating plasma, and expanding and inductively coupling the generated plasma. In another embodiment a plasma generation system is provided including a plasma generation apparatus for generating thermal plasma. The thermal plasma is received by a plasma treatment chamber external to the plasma generation apparatus. A pressure control system maintains a lower pressure in the plasma treatment chamber than in the plasma generation apparatus during plasma generation for causing the thermal plasma to expand within the plasma treatment chamber. An inductor system inductively couples the thermal plasma.

Abstract: A material processing apparatus having an integrated toroidal plasma source is described. The material processing apparatus includes a plasma chamber that comprises a portion of an outer surface of a process chamber. A transformer having a magnetic core surrounds a portion of the plasma chamber. The transformer has a primary winding. A solid state AC switching power supply comprising one or more switching semiconductor devices is coupled to a voltage supply and has an output that is coupled to the primary winding. The solid state AC switching power supply drives an AC current in the primary winding that induces an AC potential inside the chamber that directly forms a toroidal plasma that completes a secondary circuit of the transformer and dissociates the gas.

Abstract: An induction plasma torch comprises a tubular torch body, a gas distributor head located at the proximal end of the torch body for supplying at least one gaseous substance into the chamber within the torch body, a higher frequency power supply connected to a first induction coil mounted coaxial to the tubular torch body, a lower frequency solid state power supply connected to a plurality of second induction coils mounted coaxial to the tubular torch body between the first induction coil and the distal end of this torch body. The first induction coil provides the inductive energy necessary to ignite the gaseous substance to form a plasma. The second induction coils provide the working energy necessary to operate the plasma torch. The second induction coils can be connected to the solid state power supply in series and/or in parallel to match the impedance of this solid state power supply.

Abstract: A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface.

Abstract: A plasma transport system uses a slow-wave power signal in external radio-frequency (RF) inductors to force plasmas to flow through ducts, such as from a plasma generator to a point of use. A magneto-hydrodynamic force is deliberately created by the RF inductors to displace plasma electrons down along the inside of the ductwork. A charge separation results that both drags the ions along and slows down the electrons with the ion drag. The consequence is that both electrons and ions are motivated down the ductwork and the overall plasma charge stays neutral. A directed stream of energetic ions and neutral gas atoms can be realized. The RF electric fields induced in the plasma tend to counteract any electron cooling and help maintains the plasma electron temperature enough to reduce later reionization power demands.

Abstract: The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.

Abstract: There is provided a secondary reactive termination circuit connected between the output of the RF power generator and the input of the plasma chamber to allow the tight regulation or limiting of the voltage and current components of the secondary frequencies within the process plasma. The secondary reactive circuit controls the impedance of the match network designed primarily to operate at the fundamental frequency of the RF power generator as seen by secondary frequencies in the system. A variable capacitor gives the operator the advantage of being able to tightly regulate the voltage, current, and power within a process at discrete frequencies without concern for impedance variability induced by other components in the system.

Abstract: RF magnetic shields which support tangential electric fields. The RF shields are particularly suited for use in magnetic resonance imaging (MRI) systems, but may also be used in other radio frequency applications. The RF magnetic shields may include a dielectric layer having conductive regions separated by non-conductive regions on each side thereof to form a plurality of capacitive elements. The capacitive elements are partially non-conductive at radio frequencies such that the electrical component tangent to the shield is supported and the magnetic component perpendicular to the shield is blocked. The size and shape of the non-conductive and conductive regions are selected to develop a capacitive voltage across the capacitive elements at radio frequencies, and be substantially non-conductive at frequencies other than RF. The RF magnetic shields provide an electrical field that is uniform around the entire sample volume.

Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. A matching network includes first and second portions respectively between the source and terminals and between the terminals and the antenna plasma excitation coil. In response to indications of impedance matching between the source and its load, currents flowing between (1) the first portion and the terminals and (2) the terminals and the coil are controlled so the latter exceeds the former. The indications control impedances of the first and second portions or the first portion impedance and the source frequency. The coil can include a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding.

Abstract: The invention provides a method, for processing a substrate. The substrate is placed in a chamber, where the chamber comprises a substrate holder within the chamber and a dielectric window forming a side of the chamber. A gas is provided into the chamber. An antenna is used to generate an azimuthally symmetric electric field. A substantially azimuthally symmetric plasma is formed from the gas using the azimuthally symmetric electric field. A substantially uniform process rate is produced across a surface of a substrate.

Abstract: The inductively coupled plasma source and antenna geometry are significant factors in determining plasma and process uniformity inside the chamber. Growing demands for processing larger and larger wafers or LCD substrates and providing higher and higher degrees of plasma uniformity challenge the current ICP type antenna designs and push development of sources. Branching RF antenna, featuring a plurality of major and minor branches, provides improved coverage of processing area, reduced standing wave effect, improved uniformity of inductively coupled electromagnetic field, more uniform plasma production, and more homogeneous processing conditions throughout the whole processing area.

Abstract: A plasma source for use in, for example, semiconductor processing contains a radio-frequency generator, an impedance matching network, and a coil that encloses a tube. The coil is bifilar, i.e., the turns of one are interlaced with the turns of a second winding. The matching network supplies only a single coil in the plasma source, unlike conventional arrangements wherein a single matching network supplies multiple coils in the plasma source.

Abstract: A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry.

Abstract: Induction coils of an induction coupling type plasma processing apparatus are divided into a plurality of coil elements and a plurality of lead wire portions for effecting connection between the coil elements. The coil elements are disposed inside of a process chamber, while the lead wire portions which effect connection between the coil elements are disposed outside of the process chamber. The coil elements disposed in the process chamber are in the form of short arcs as a result of the division thereof, so that they can be easily arranged symmetrically with respect to the center of the process chamber, whereby a uniform plasma distribution can be easily achieved.

Abstract: A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.

Abstract: The invention relates to a plasma source whose plasma is ignited by an electric voltage. To be able to carry out the ignition at relatively low voltages, a plate (5) provided with holes (13, 14) is provided beneath a plasma volume (17), which is disposed above a wall (21) of a plasma chamber (3). Through this plate (5) an ignition volume (16) is formed beneath the plasma volume (17) with a higher pressure than in the plasma volume (17), in which the plasma ignites first. The ignition is subsequently propagated through the holes of the plate (5) into the plasma volume (17).

Abstract: A persistent ionization plasma generator is described that forms a plasma in a cavity that persists for a time after termination of the exciting RF electric field. The plasma generator includes a RF cavity that is in fluid communication with a source of ionizing gas. The RF cavity can be at substantially atmospheric pressure. An RF power source that generates an RF electric field is electromagnetically coupled to the RF cavity. An ultraviolet light source is positioned in optical communication to the cavity. An antenna is positioned within the cavity adjacent to the ultraviolet light source. A chamber for confining the plasma can be positioned in the cavity around the antenna.

Abstract: A simultaneous discharge apparatus comprises a plurality of plasma treatment apparatuses and a single high-frequency power supply, in which the plurality of plasma treatment apparatuses are discharged simultaneously using the single high-frequency power supply, the plurality of plasma treatment apparatuses being a plasma treatment apparatus in which a coil electrode is used as an electrode for generating plasma and inductive coupled plasma is mainly generated, wherein a power supply line from the high-frequency power supply is branched into each plasma treatment apparatus through a branch section, and fixed capacitors are provided on the downstream side of the branch section and between the branch section and each plasma treatment apparatus, respectively. It is preferable to adjust the impedance of the fixed capacitor to be 2.3-2.7 times that of the coil electrode which is located on the same downstream side.

Abstract: Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

Abstract: An electromagnetic pulse device having a conductive coil, and optionally a conductive core disposed within the coil and spaced apart there from. One or more plasma discharge devices are disposed at least partially along a length of the conductive coil and are spaced apart from the conductive coil. A spark gap or similar device is attached to the plasma discharge devices to activate them to produce a traveling electric discharge. The discharge creates a traveling short circuit in the conductive coil thereby compressing the magnetic field. The result is the production of an electromagnetic pulse. Further disclosed is a method for producing an electromagnetic pulse.

Abstract: According to one embodiment, an apparatus is described. An apparatus includes a vacuum chamber, an electrical transformer coupled to the vacuum chamber, and an ignition circuit. The electrical transformer induces an electromagnetic field within the vacuum chamber. The transformer includes a primary winding and a magnetic core. In addition, the transformer includes a secondary winding, to which the circuit used to ignite the vacuum chamber is coupled. The ignition circuit is used to establish a controlled capacitive discharge that is used to ignite the vacuum chamber.

Abstract: A high current density, low voltage ion source includes a vacuum chamber. A plasma source induces generation of a plasma within the chamber, or injects a plasma directly into the chamber. A magnetic and electric field cooperate to guide the ions from the plasma region in a beam towards a substrate to be processed by the ions. A method of use of the ion source includes production of an ion beam for processing of a substrate.

Abstract: Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding.

Abstract: A system and method for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The components at frequencies that are harmonics of the fundamental frequency are removed from the plasma by placing a body of an RF absorber material in energy receiving communication with the plasma, the body having a frequency dependent attenuation characteristic such that the body attenuates electrical energy at frequencies higher than the fundamental frequency more strongly than energy at the fundamental frequency.

Abstract: An ion beam deposition system for sputtering material layers comprising a vacuum chamber, a substrate positioned in the vacuum chamber, a first target holder capable of holding at least one target of a first material, said first target holder being positioned in the vacuum chamber, a second target holder capable of holding at least one target of a second material, said second target holder being positioned in the vacuum chamber, a first ion beam source for directing ions at the at least one target of the first material for depositing said first material onto the substrate, and a second ion beam source for directing ions at the at least one target of the second material for depositing said second material onto the substrate. Said deposition system includes a control system that allows materials to be deposited from the first and second target holder with negligible delay between the depositions.

Abstract: The invention features RF plasma generation systems, methods for operating the systems, methods for calibrating the systems, and calibration apparatus. One RF plasma generation system includes an impedance matching network having an input port to receive an RF signal from an RF generator, and an output port to deliver the RF signal to an input port of a plasma vessel associated with a load. The system includes an RF signal probe in electromagnetic communication with the input port of the impedance matching network to detect at least one RF signal parameter associated with the RF signal at the input port of the impedance matching network. The system can include a calibration storage unit that stores calibration data. The calibration data includes an association of values of the RF signal parameter with values of at least one characteristic of the load.

Abstract: According to one embodiment, an apparatus is described. The apparatus includes a vacuum chamber, an electrical transformer coupled to the vacuum chamber, and an ignition circuit. The electrical transformer induces an electromagnetic field within the vacuum chamber. The transformer includes a primary winding and a magnetic core. In addition, the transformer includes a secondary winding, to which the circuit used to ignite the vacuum chamber is coupled. The ignition circuit is used to establish a controlled capacitive discharge that is used to ignite the vacuum chamber.

Abstract: The preferred embodiments described herein provide a magnetic mirror plasma source. While the traditional magnetic/electrostatic confinement method is ideal for many applications, some processes are not best served with this arrangement. The preferred embodiments described herein present a new technique to confine electrons (3) to produce a low pressure, dense plasma directly on a substrate surface (75). With these preferred embodiments, a combination of electrostatic and mirror magnetic confinement is implemented. The result is a novel plasma source that has unique and important advantages enabling advancements in PECVD, etching, and plasma treatment processes.

Abstract: This application discloses the technique of the RF plasma processing using two RF waves of different frequencies, where plasma is generate and retained sufficiently and stably. The first frequency is for generating plasma by igniting a discharge, and the second frequency is for generating self-biasing voltage at a substrate to be processed. The wave of the second frequency is applied with a time-lag after applying the RF wave of the first frequency. This application also discloses the impedance matching technique in the RF plasma processing, where impedance to be provided is optimized both for igniting the discharge and for stabilizing the plasma.

Abstract: An inductively coupled plasma source may be constructed with a reactor including a gas inlet, a gas outlet, and a tube structure containing an electrically conductive layer with an open loop. The tube structure is disposed between two electrically non-conductive layers that form a continuous loop providing a discharge path. An A.C. power source supplies A.C. voltage to the conductive layer while a D.C. power source supplies a direct current voltage to the conductive layer. An inductor is electrically connected between the conductive layer and the D.C. power source and a capacitor is electrically connected between the conductive layer and the A.C. power source. The conductive layer is biased by the D.C. voltage applied by the D.C. voltage. Induction of a magnetic field is generated by the flow of current of conductive layer to which the A.C.

Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. A matching network includes first and second portions respectively between the source and terminals and between the terminals and the antenna plasma excitation coil. In response to indications of impedance matching between the source and its load, currents flowing between (1) the first portion and the terminals and (2) the terminals and the coil are controlled so the latter exceeds the former. The indications control impedances of the first and second portions or the first portion impedance and the source frequency. The coil can include a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding.

Abstract: The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.

Abstract: A plasma processing apparatus has a plasma processing chamber that accommodates an electrode pair of a plasma excitation electrode for exciting plasma and a susceptor electrode facing the plasma excitation electrode, a workpiece to be treated being placed therebetween. The apparatus also has a chassis that accommodates an impedance matching circuit, provided in the middle of a supply path for feeding RF power from an RF generator to the plasma excitation electrode, for matching the impedance between the RF generator and the plasma processing chamber. In the chassis, impedances are axisymmetrically equal at a predetermined frequency with respect to the direction of a high-frequency current returning to the RF generator. The matching circuit has at least two inductance coils connected in parallel.

Abstract: An antenna arrangement for generating an electric field inside a process chamber through a window. Generally, the antenna arrangement comprises an outer loop, comprising a first outer loop turn disposed around an antenna axis, an inner loop, comprising a first inner loop turn disposed around the antenna axis, wherein the inner loop is closer to the antenna axis than the outer loop is to the antenna axis in each azimuthal direction, and a radial connector radially electrically connecting the outer loop to the inner loop, wherein the radial connector is placed a large distance from the window.