Abstract: A rotation detection device includes a plurality of magnetic encoders of a ring shape arranged coaxially and having different numbers of magnetic poles, a plurality of magnetic sensors each operable to detect the magnetic field of the corresponding magnetic encoder and having a function of detecting positional information within a single magnetic pole of the corresponding magnetic encoder, a phase difference detector to determine the phase difference of magnetic field signals detected respectively by the magnetic sensors, and an angle calculator to calculate an absolute rotation angle of the magnetic encoders based on the detected phase difference.

Abstract: Methods of detecting anomalies in ambient alternating current (AC) fields are provided. An exemplary embodiment of such a method includes the steps of placing an AC field sensor in an ambient AC field, generating a signal representative of the ambient AC field received by the sensor, and processing the signal to determine if the ambient AC field includes any anomalies. Various applications for the methods are also provided.

Abstract: The invention relates to a method for measuring the magnetic permeability of a magnetic material by measuring the magnetic interaction of an electromagnetic field with this material by using a measuring device including a measuring cell connected through a microwave frequency cable (13) to a vector network analyser (12), said method comprising steps for gauging/calibrating said measuring device, for determining corrective coefficients to be applied to the measurements obtained by means of this device, for verifying the non-drift of this device, these steps being carried out with the help of a reference sample, wherein a reference sample is used, comprising at least one inclusion which enables creation, in a given volume, of a local artificial permeability, each inclusion being achieved by combining at least one inductive component possibly associated with a combination of at last one capacitive and/or resistive and/or active component, the frequency response of the electromagnetic properties of each volume be

Abstract: A multiferroic antenna and sensor where the sensor includes a multiferroic stack of multiple connected multiferroic layer-pairs, each multiferroic layer-pair comprising an alternating layer of a magnetostrictive material and a piezoelectric material bonded together enabling a high signal sensitivity, a magnetic field of an incident signal causing mechanical strain in the magnetostrictive material layers that strains adjacent piezoelectric material layers producing an electrical voltage in each multiferroic layer-pair proportional to the incident signal. An output of the multiferroic stack comprises the electrical voltage amplified proportional to a total number of multiple connected multiferroic layer-pairs in the multiferroic stack.

Abstract: A magnetic field sensor arrangement (4) comprises a stacked arrangement (1) with a first magnetic field sensor body (20) and a second magnetic field sensor body (40). The first magnetic field sensor body (20) has a first main surface (21), on which is arranged a first magnetic field sensitive element (23), and a second main surface (22), which is approximately parallel to the first main surface (21). The second magnetic field sensor body (40) has similarly a first main surface (41), on which is arranged a second magnetic field sensitive element (43), and a second main surface (42), which is approximately parallel to the first main surface (41).

Abstract: Methods of reorienting ferromagnetic layers of a plurality of magnetoresistive elements and structures formed by the methods. The plurality of magnetoresistive elements, preferably GMR multilayer elements, are manufactured and arranged on a planar substrate. The method effectively allows selective orientation and reorientation of distinct ferromagnetic layers of a subset of the magnetoresistive elements on the substrate. The methods make either use of subsequent annealing processes making use of magnetic fields pointing in different directions. Prior to application of a subsequent annealing process, a complimentary subset of magnetoresistive elements is effectively shielded by selective deposition of a soft-magnetic shielding layer. Alternatively, a single annealing process can be performed when an externally applied magnetic field is locally modified by soft-magnetic structures, such as fluxguides.

Abstract: The present invention provides a metal/insulator nanogranular material including: ferromagnetic particles having a composition represented by the formula (1) (Fe1?xCox)100?z(B1?ySiy)z??(1) in which x, y and z each satisfy 0?x?1, 0?y?1, and 0<z?20; and an insulating matrix constituted of an Mg—F compound, the insulating matrix being filled to surround the ferromagnetic particles.

Abstract: A fluxgate magnetic field sensor including an excitation current conductor (4) and a layer of saturable magnetic material cladding (6) having a plurality of feed-through channels (16) extending between opposed faces of the cladding layer, the excitation current conductor weaving through a plurality of said feed-through channels.

Abstract: Apparatus and method for harvesting energy from the environment and/or other external sources and converting it to useful electrical energy. The harvester does not contain a permanent magnet or other local field source but instead relies on the earth's magnetic field of another source of a magnetic field that is external to the sensing device. One advantage of these new harvesters is that they can be made smaller and lighter than energy harvesters that contain a magnet and/or an inertial mass.

Abstract: A magnetic sensor that is inexpensive and suppresses changes in offset voltage caused by wear. The magnetic sensor includes magnetoresistance elements having electrical resistances that change in accordance with magnetism changes. The magnetic sensor detects magnetism based on changes in the electrical resistances. The magnetoresistance elements are covered by a protective film. Part of the protective film is etched and eliminated to form a recess.

Abstract: A magnetic device comprises a magnetic element, a first magnetic field application device, and a second magnetic field application device. The first and second magnetic field applying means are disposed on mutually opposite sides of the magnetic element. The magnetic element is, for example, an element in which a soft magnetic film is formed in a meandering shape on a nonmagnetic substrate. The first and second magnetic field application device create a magnetic field in one direction from the first magnetic field application device toward the second magnetic field application device. The bias magnetic field in one direction is thereby applied to the entire soft magnetic film in the magnetic element disposed between the first and second magnetic field application device.

Abstract: A magnetic device comprises a magnetic element, a first magnetic field applying means, and a second magnetic field applying means. The first and second magnetic field applying means are disposed on mutually opposite sides of the magnetic element. The magnetic element is, for example, an element in which a soft magnetic film is formed in a meandering shape on a nonmagnetic substrate. The first and second magnetic field applying means create a magnetic field in one direction from the first magnetic field applying means toward the second magnetic field applying means. The bias magnetic field in one direction is thereby applied to the entire soft magnetic film in the magnetic element disposed between the first and second magnetic field applying means.

Abstract: This invention provides a magnetic sensor element that can detect a detection target substance with high accuracy. The magnetic sensor element includes a multi-magnetic domain structure in which a plurality of magnetic domains extend in a row in one direction and in which the magnetic domains that are adjoining have easy magnetization axes in opposite directions to each other. The multi-magnetic domain structure has a surface region. Within the surface region, when counting from one end of the multi-magnetic domain structure, affinities for a magnetic particle or a substance that can be immobilized on the magnetic particle are mutually different at a first surface portion located at a boundary between a (2n?1)th (n is a natural number) magnetic domain and a (2n)th magnetic domain and a second surface portion located at a boundary between the (2n)th magnetic domain and a (2n+1)th magnetic domain.

Abstract: A fluxgate sensor includes a magnetic core including CoNbZr, an excitation coil, and a magnetic field sensing coil. The fluxgate sensor can use CoNbZr. A low coercivity and high magnetic permeability can be obtained.

Abstract: The present invention provides a current sensor of smaller and simpler configuration, capable of measuring a current to be detected with high precision and stability. A magnetic sensor includes: an element substrate including a magnetoresistive element, the magnetoresistive element having a pinned layer with a magnetization pinned to a direction, an intermediate layer, and a free layer whose magnetization direction changes according to an external magnetic field; and a magnetic sheet attached on one side of the element substrate so as to apply a bias magnetic field to the magnetoresistive element.

Abstract: A two-axis geomagnetic sensor is disclosed. The two-axis geomagnetic sensor includes a first geomagnetic sensor part including a first wafer and a first geomagnetic sensor on a surface of the first wafer; and a second geomagnetic sensor part including a second wafer and a second geomagnetic sensor on a surface of the second wafer. The first and second geomagnetic sensor parts are bonded to each other, in which the first and second geomagnetic sensors positioned in an orthogonal relation to each other. Accordingly, an occupancy area of the geomagnetic sensor can be reduced. Further, the geomagnetic sensor on each axe can have the same magnetic material properties, and alignment deviation cannot be generated.

Abstract: The thin film magnetic sensor comprising a GMR film having a Giant Magneto-Resistance effect; and thin film yokes formed of a soft magnetic material connected electrically to both ends of the GMR film; wherein the thin film yoke has a high sensitivity portion with a demagnetizing factor of NL in a magnetic sensitive direction, and a low sensitivity portion with a demagnetizing factor of NH(>NL) in the magnetic sensitive direction, the low sensitivity portion being connected electrically in series with the high sensitivity portion.

Abstract: Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an AlxIn1-xSb mixed crystal layer formed on a substrate, and an InAsxSb1-x (0<x?1) thin film conducting layer directly formed on the AlxIn1-xSb layer, in which the AlxIn1-xSb mixed crystal layer is a layer that exhibits higher resistance than the InAsxSb1-x thin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAsxSb1-x thin film conducting layer, and the a lattice mismatch is +1.3% to ?0.8%.

Abstract: A magnetic field effect sensor system having giant magneto-impedance elements. The elements may be elongated strips, and in proximity to and parallel with one another, and connected in series with connections or electrodes. The elements may have a regular shape without turns. They may have a single- or multi-layer structure. Some of the layers in the elements may contain a soft magnetic material, for instance, which form a closed loop for magnetic flux around a non-magnetic conductor.

Abstract: Provided is a current sensor capable of detecting an induced magnetic field by a current to be detected with higher precision. The first and second modules are provided on facing surfaces of integrated substrates, respectively, with spacers in between. Each of the first and second modules includes an element substrate, and an MR element layer. On each of the MR elements layers, provided is an MR element having a stacked structure including a pinned layer, a nonmagnetic intermediate layer, and a free layer whose magnetization direction changes according to the induced magnetic field and which exhibits an anisotropic field in a direction different from that of the magnetization of the pinned layer. The stacked structures of the MR elements are provided in a same layer level.

Abstract: A magnetoresistive assembly includes at least a first and a second magnetoresistive element formed on a common substrate, the at least first magnetoresistive element comprising a first pinned ferromagnetic layer being magnetized in a first direction, the at least second magnetoresistive element comprising a second pinned ferromagnetic layer being magnetized in a second direction different than the first direction.

Abstract: A thin-film device for detecting the variation of intensity of physical quantities, in particular a magnetic field, in a continuous way, comprises an electrical circuit including one or more sensitive elements, which are designed to vary their own electrical resistance as a function of the intensity of a physical quantity to be detected. One or more of the sensitive elements comprise at least one nanoconstriction, and the nanoconstriction comprises at least two pads made of magnetic material, associated to which are respective magnetizations oriented in directions substantially opposite to one another and connected through a nanochannel. The nanochannel is able to set up a domain wall that determines the electrical resistance of the nanoconstriction as a function of the position, with respect to the nanochannel, of the domain wall formed in the sensor device.

Abstract: In order to provide a magneto-resistive angle sensor (100) comprising a sensor device for detecting an angle (?) of an external magnetic field relative to a reference axis of the sensor device, which allows measurement of the angle (?) without the measurement result being affected by manufacturing errors, it is proposed that the sensor device comprises a flat AMR layer (14, 15) with one electrical contact (K0) for applying a current (I) and a plurality of electrical contacts (Ki) for measuring a flow of current through the AMR layer (14,15).

Abstract: A semiconductor process and apparatus provide a high-performance magnetic field sensor from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216), where each differential sensor (e.g., 201) is formed from a Wheatstone bridge structure with four unshielded MTJ sensors (202-205), each of which includes a magnetic field pulse generator (e.g., 414) for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers (e.g., 411) to eliminate micromagnetic domain switches during measurements of small magnetic fields.

Abstract: An AMR gear tooth rotation sensor and a method for utilizing it are disclosed. These facilitate easy manufacture of the device without sacrificing either high sensitivity or high signal output. This is achieved by forming individual sensing elements out of AMR stripes and then connecting four such sensing elements as a Wheatstone bridge. The latter is attached to a permanent magnet that provides a bias field whose value rises and falls as wheel teeth and valleys (respectively) move past the rotation sensor.

Abstract: The thin film magnetic sensor comprising a GMR film having a Giant Magneto-Resistance effect; and thin film yokes formed of a soft magnetic material connected electrically to both ends of the GMR film; wherein the thin film yoke has a high sensitivity portion with a demagnetizing factor of NL in a magnetic sensitive direction, and a low sensitivity portion with a demagnetizing factor of NH(>NL) in the magnetic sensitive direction, the low sensitivity portion being connected electrically in series with the high sensitivity portion.

Abstract: A fluxgate sensor is integrated in a semiconductor substrate. The fluxgate sensor has two bar type soft magnetic cores, or a rectangular-ring type soft magnetic core to form a closed magnetic path on the semiconductor substrate, with an excitation coil formed of a metal layer either of the united structure winding the two bar-type cores or two longer sides of the rectangular-ring type core altogether and substantially in a number ‘8’ pattern, or of a separated structure winding the two bar type cores or two longer sides of the rectangular-ring type core, respectively, in a number ‘8’ pattern. Also, a pick-up coil is formed on the two bar-type cores or two longer sides of the rectangular-ring type core, either of the united structure winding the two bar-type cores or two longer sides of the rectangular-type core altogether in a solenoid pattern, or of the separated structure winding the two bar type cores or two longer sides of the rectangular-ring type core, respectively, in a solenoid pattern.

Abstract: A method of harvesting vibrational energy is provided. This method involves generating a high magnetic flux density field within a current induction conductor such as an induction coil. The high magnetic flux density field is generated between two same pole magnets. The high magnetic flux density field may be displaced relative to the current induction conductor with vibrational energy. These displacements then cause the current induction conductor to be energized. The two same pole magnets are mounted between piezoelectric transducer (PZT) materials. These PZT materials generate an electric potential when the PZT materials are subject to the mechanical stresses of the vibrational energy. The electrical energy translated from the vibrational energy through both the energized current induction conductor and stress PZT materials may then be used to power a power circuitry or be stored for later use.

Abstract: A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other.

Abstract: A magnetoresistive layer system, in an environment of a magnetoresistive layer stack that works particularly on the basis of the GMR effect or the AMR effect, a layer array being provided which generates a magnetic field which acts upon the magnetoresistive layer stack, and the layer array having at least one hard magnetic layer and at least one soft magnetic layer. Furthermore, a sensor element, particularly for the detection of magnetic fields with respect to their strength and/or direction, having such a layer system.

Abstract: An inductive sensor includes an inductor comprising conductive loops and at least one hinge mechanically coupling the loops. Operation of the hinge changes the position of the loops and causes a change in the inductance of the sensor. A sensor material may be oriented with respect to the loops so that a dimensional change of the sensor material operates the hinge and causes the change in the position of the loops.

Abstract: A Magneto-Optoelectronic Device MOD (10) includes a magnetic sensing device (12), such as a magnetoresistive device or a magnetic tunnel junction device, that is combined with a semiconductor light emitter (14), such as a LED or a laser diode, to create a compact integrated device where changes in an ambient magnetic field are expressed as changes in an optical beam intensity emanating from the MOD. Using the MOD (10) the magnetic field related information can be transmitted by a light wave over very large distances through some medium (34), for example, through free space and/or through an optical fiber.

Abstract: Methods of reorienting ferromagnetic layers of a plurality of magnetoresistive elements and structures formed by the methods. The plurality of magnetoresistive elements, preferably GMR multilayer elements, are manufactured and arranged on a planar substrate. The method effectively allows selective orientation and reorientation of distinct ferromagnetic layers of a subset of the magnetoresistive elements on the substrate. The methods make either use of subsequent annealing processes making use of magnetic fields pointing in different directions. Prior to application of a subsequent annealing process, a complimentary subset of magnetoresistive elements is effectively shielded by selective deposition of a soft-magnetic shielding layer. Alternatively, a single annealing process can be performed when an externally applied magnetic field is locally modified by soft-magnetic structures, such as fluxguides.

Abstract: To detect a magnetic flux density of a magnetic field applied from an outside, a semiconductor magnetic sensor of the present invention includes: a transistor (MP101) formed on a side of one, side of a hall element (100), for driving the hall element (100), the transistor (MP101) having a drain connected to a terminal (C101) formed on the one side; a transistor (MP102) formed on the side of the one side and having a drain connected to a terminal (C102) formed on the one side; a transistor (MN101) formed on a side of another side opposite to the one side and having a drain connected to a terminal (C103) formed on the another side; a transistor (MN102) formed on the side of the another side and having a drain connected to a terminal (C104) formed on the another side.

Abstract: A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species held on a magnetic particle. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. A thin-film channel structure to the sensor is supported on the substrate that can be accompanied by a reservoir structure, and an electrical interconnection conductor is supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors.

Abstract: A magnetic sensor, system and method include a magnet located proximate to a target comprising a plurality of teeth and a plurality of slots formed therebetween. An integrated circuit is located on a side of the magnet wherein the integrated circuit comprises a plurality of magnetoresistive bridge components. The integrated circuit and the magnet are configured into a sensor package, such that the magnetoresistive bridge components enable the detection of a target tooth when one half of the plurality of magnetoresistive bridge components come into proximity with an edge of a tooth before that of another half of the magnetoresistive bridge components as the tooth and an associated slot thereof pass by the sensor package.

Abstract: The invention relates to a fluxgate micromagnetometer implemented in thin layers, fitted with at least one excitation coil with an arrangement and a structure that bring improvements particularly in terms of the magnetometer footprint, reduction in the “offsets” of measurements taken by the magnetometer, common mode rejection.

Abstract: A magnetic-field-measuring probe includes at least one magnetoresistive or magnetoinductive sensor which is sensitive to the magnetic field along a privileged measurement axis. The probe includes: at least two magnetoresistive or magnetoinductive sensors (14, 16) which are rigidly connected to one another in a position such that the privileged measurement axes thereof are parallel and offset in relation to one another in a direction that is transverse to the privileged measurement axes; and output terminals specific to each magnetoresistive or magnetoinductive sensor, in order to supply a signal that is representative of the magnetic field measured by each sensor along the privileged measurement axis thereof.

Abstract: A fluxgate sensor is integrated in a printed circuit board. The fluxgate sensor has two bar-type (or rectangular-ring shaped) soft magnetic cores to form a closed magnetic path on a printed circuit board and an excitation coil in the form of a metal film is wound around the two bar-type soft magnetic cores either in a united structure that winds the two bar-type soft magnetic cores altogether, or in a separated structure that winds the two bar-type soft magnetic cores respectively, both in a pattern of number ‘8’. A pick-up coil is mounted on the excitation coil, either winding the two bars altogether, or respectively, in a solenoid pattern. The fluxgate sensor integrated in the printed circuit board can be mass-produced at a cheap manufacturing cost. The fluxgate sensor also can be made compact-sized, and at the same time, is capable of forming a closed-magnetic path.

Abstract: A magnetoresistive sensor system includes a plurality of chip carriers, such that each integrated circuit among the plurality of chip carriers is associated with a respective magnetoresistive sensing components. A plurality of magnetoresistive sensing components can be arranged in an array, wherein each magnetoresistive component among the plurality of magnetoresistive components is associated with a respective integrated circuit among the plurality of chip carriers and wherein the plurality of magnetoresistive sensing components comprises sensing components that are spaced irregular from one another in order to optimize the performance of the array and meet requirements of a particular magnetoresistive sensing application.

Abstract: The present invention is an electrical circuit for a sensor designed to detect external magnetic fields. The circuit is composed of a stable voltage reference source, connected to a low frequency amplifier where the operating point of the amplifier depends on the voltage reference source that is biased for maximum allowable voltage swings of the amplifier. A GMI fiber is connected to the low frequency amplifier and to a crystal oscillator that generates a square wave excitation signal with which to excite the GMI fiber. A decoupling network connected to the amplifier allows stable excitation of the GMI fiber by separating the direct current paths of the amplifier from the excitation signal. When the GMI fiber is excited by the square wave signal the GMI fiber impedance varies with impressed magnetic fields, which in turn varies the output voltage of the amplifier.

Abstract: The present invention provides a magnetic sensor suitable for high resolution and having high reliability by achieving stable output even at the occurrence of variations in a gap between a magnetic medium and the magnetic sensor, and a magnetic encoder using the magnetic sensor. The present invention uses a magnetoresistive element having magnetoresistive properties that satisfy the inequation, H10?50<H50?90, where H10?50 represents a magnetic field required for a resistance change from ?R×10% to ?R×50% with respect to a maximum amount of resistance change ?R on a magnetoresitance effect curve, and H50?90 represents a magnetic field required for a resistance change from ?R×50% to ?R×90%.

Abstract: A magnetic bias film 9 includes a magnetic bias magnet 11 that has magnetic layers and generates a magnetic field within a plane perpendicular to a lamination direction of the magnetic layers, which is manufactured in the shape of substantially a rectangular prism having a long side, a short side, and a thickness (in the lamination direction) in order of decreasing lengths. A ratio of the long side with respect to the short side of the magnetic bias magnet 11 in length is in a range of 5 to 200.

Abstract: The invention discloses a sensor for 360-degree magnetic field angle measurement. It comprises multiple GMR (or MTJ) stripes with identical geometries except for their orientations. These are used as the building blocks for a pair of Wheatstone bridges that signal the direction of magnetization of their environment. The design greatly enhances sensitivity within GMR stripes and does not require an additional Hall sensor in order to cover the full 360 degree measurement range.

Abstract: Disclosed is a printed circuit board with a weak magnetic field sensor according to the present invention, which includes a substrate having first excitation circuits and first detection circuits formed on both sides thereof. First laminates are layered on both sides of the substrate, and have soft magnetic cores with a predetermined shape formed thereon. Second laminates are layered on the first laminates, and have second excitation circuits and second detection circuits, connected through via holes to the first excitation circuits and first detection circuits, respectively, so that the first and second excitation circuits and first and second detection circuits are wound around the soft magnetic cores, formed thereon. The soft magnetic cores each include a magnetic core and non-magnetic metal layers formed on both sides of the magnetic core.

Abstract: The process margin for the manufacture of devices formed from multi-element MTJ or GMR devices has been widened by providing a method and structure to reset the magnetization directions of all pinned layers simultaneously so that their directions of magnetization become evenly distributed. This has the effect of minimizing non-linearity and hysteresis in these devices during their subsequent operation.

Abstract: A sensor component used to measure a magnetic field strength is disclosed. In one embodiment, the sensor component contains a plurality of leads and a sensor semiconductor chip, which measures the magnetic field strength. The sensor semiconductor chip has pads on its active upper side. These pads are connected electrically to the leads. The sensor component also contains a magnet, which is attached to the leads. The sensor semiconductor chip is arranged on an upper side of the magnet. The sensor component also has a first mold compound which shares a common boundary with the sensor semiconductor chip and surrounds the sensor semiconductor chip, the magnet and parts of the lead.

Abstract: A micro-machining method of manufacturing a micro fluxgate sensor manufactured having an amorphous magnetic core includes forming lower coils of an excitation coil and a magnetic field detecting coil on a wafer, depositing a first insulating layer on the lower coils and forming an amorphous magnetic core, depositing a second insulating layer on the amorphous magnetic core and forming upper coils connected to the lower coils to complete the excitation coil and the magnetic field detecting coil, and covering the excitation coil and the magnetic field detecting coil with a protective film, and etching the protective film to expose a portion of the excitation coil and magnetic field detecting coil, thereby forming a pad.

Abstract: A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other.

Abstract: A magnetic sensor circuit supplying an excitation current to an MI device, and having a detection signal supplied thereto corresponding to a magnetic field intensity from the MI device based on the excitation current. The magnetic sensor circuit includes a pulse current supplying circuit supplying a pulse current to the MI device; a sample-and-hold circuit maintaining an approximately peak value of the detection signal and outputting a hold signal; and a temperature compensation part compensating temperature characteristics of the magnetic sensor circuit with respect to the hold signal. The sample-and-hold circuit may include a switching circuit and a holding capacitor. The switching circuit may have an opening/closing control signal supplied thereto based on timing of the pulse current.