Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

Abstract: A magnetic field sensor array includes a plurality of sensor segments, each including a plurality of magnetic field sensors. A magnetizing current conductor is situated so as to run in the area of the magnetic field sensors in such a way that elements of the magnetic field sensors may be magnetized. A plurality of parallel-connected half-bridges, each including a high switch pJ and a low switch nJ, each include a center tap connection situated between the switches. The magnetizing current conductor is connected to each center tap connection, by means of which the magnetizing current conductor is divided into separately activatable magnetizing segments. Elements of a sensor segment are magnetized in that two switches nJ and pJ+1 having different electrical potentials, or alternatively pJ and nJ+1, of two directly adjacent half-bridges are closed simultaneously. At least one further switch nX<J or pY>J+1 or alternatively pX<J or nY>J+1 is closed.

Abstract: A system for measuring an angular position of a rotor with respect to a stator, wherein the rotor is rotatable around a rotation axis, and the system includes: a magnetic source mounted on the rotor, having at least four magnet poles and providing a periodically repetitive magnetic field pattern with respect to the rotation axis; a sensor mounted on the stator and comprising a plurality of sensor elements for measuring at least one magnetic field component of the magnetic field and for providing a measurement signal thereof; the sensor being located substantially centered around the rotation axis, in a plane substantially perpendicular to the rotation axis at a first distance from the magnetic source; the sensor elements being located substantially on a circle at a second distance from the rotation axis; a calculator that determines the angular position by calculating it from the measurement signals.

Abstract: A magnetic sensor includes a first resistor having a first resistance and a first correction resistor having a second resistance. The first resistor and the first correction resistor are connected in series. The first resistor is configured so that the first resistance changes periodically as strength of a magnetic field component changes periodically. The first correction resistor is configured so that a change in a sum of the first resistance and the second resistance due to a noise magnetic field is smaller than a change in the first resistance due to the noise magnetic field.

Abstract: A method of determining a gradient of a magnetic field, includes the steps of: biasing a first/second magnetic sensor with a first/second biasing signal; measuring and amplifying a first/second magnetic sensor signal; measuring a temperature and/or a stress difference; adjusting at least one of: the second biasing signal, the second amplifier gain, the amplified and digitized second sensor value using a predefined function f(T) or f(T, ??) or f(??) of the measured temperature and/or the measured differential stress before determining a difference between the first/second signal/value derived from the first/second sensor signal. A magnetic sensor device is configured for performing this method, as well as a current sensor device, and a position sensor device.

Abstract: A magnetic field detection apparatus includes a magnetoresistive effect element and a helical coil. The magnetoresistive effect element includes a magnetoresistive effect film extending in a first axis direction. The helical coil includes a parallel connection including first and second parts extending in a second axis direction inclined with respect to the first axis direction. The first and second parts are adjacent to each other in a third axis direction and coupled to each other in parallel. The helical coil is wound around the magnetoresistive effect element while extending along the third axis direction. The magnetoresistive effect film overlaps the first and second parts in a fourth axis direction orthogonal to the second and third axis directions. The helical coil is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect film in the third axis direction.

Abstract: An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module.

Abstract: The present disclosure provides a method of monitoring the magnetic field in which a magnetic sensor is operating in to ensure that the sensor is operating within its defined magnetic window. For example, the method uses the sensor output of either a multi-turn sensor, or some other magnetoresistive sensor that is being used in conjunction with the multi-turn sensor, for example, a magnetic single turn sensor or a second multi-turn sensor, to monitor the operating magnetic field.

Abstract: The present invention relates to apparatuses and methods for measuring electrical currents. A measurement circuit is electrically separated from a primary conductor through which the current to be measured flows. An indirect coupling between the primary conductor and the measurement circuit is achieved by magnetic coupling. The magnetic field created by the current is detected by a magnetic field sensor, which forms part of the measurement circuit. To avoid unwanted capacitive coupling, according to at least some embodiments, an electrical shield is placed between the primary conductor and the measurement circuit. In some embodiments, a differential magnetic field sensor is placed in proximity to two opposite segments of the primary conductors to achieve differential sensing. The disclosed circuits are particularly useful in the design and manufacturing of highly integrated sensors, such as a sensors integrated into a single chip package, and can be used for PWM controlled currents.

Abstract: A packaged current sensor integrated circuit includes a primary conductor having an input portion and an output portion configured to carry a current to be measured by a magnetic sensing element supported by a semiconductor die adjacent to the primary conductor. Each of the input portion and output portion of the primary conductor is exposed from orthogonal sides of the package body. A fault signal may be provided to indicate an overcurrent condition in the integrated current sensor package. The primary current path may be made of a thick lead frame material to reduce the primary current path resistance.

Abstract: A pair of bias magnets applies a bias magnetic field to the magneto-resistive effect element, the bias magnetic field having a component in a direction such that the component cancels the external magnetic field that is applied to the magneto-resistive effect element and a component that is perpendicular to the external magnetic field. The bias magnet has an elongate cross section in a plane that is parallel both to the external magnetic field and to the bias magnetic field. In a projection plane that is parallel to the cross section and onto which the bias magnets and the magneto-resistive effect element are projected, the bias magnet includes an element facing side that is opposite to the magneto-resistive effect element and that extends in a longitudinal direction. The bias magnet is magnetized in a direction that is perpendicular to the longitudinal direction. The element facing side is longer than other sides.

Abstract: A semiconductor device may be provided including a first series portion and a second series portion electrically connected in parallel with the first series portion. The first series portion may include a first MTJ stack and a first resistive element electrically connected in series. The second series portion may include a second MTJ stack and a second resistive element electrically connected in series. The first resistive element may include a third MTJ stack and the second resistive element may include a fourth MTJ stack. The first, second, third, and fourth MTJ stacks may include a same number of layers, which may include a fixed layer, a free layer, and a tunnelling barrier layer between the fixed layer and the free layer. Alternatively, the first resistive element may include a first transistor and the second resistive element may include a second transistor.

Abstract: A single-chip two-axis magnetoresistive angle sensor comprises a substrate located in an X-Y plane, a push-pull X-axis magnetoresistive angle sensor and a push-pull Y-axis magnetoresistive angle sensor located on the substrate. The push-pull X-axis magnetoresistive angle sensor comprises an X push arm and an X pull arm. The push-pull Y-axis magnetoresistive angle sensor comprises a Y push arm and a Y pull arm. Each of the X push, X pull, Y push arm, and Y pull arms comprises at least one magnetoresistive angle sensing array unit. The magnetic field sensing directions of the magnetoresistive angle sensing array units of the X push, X pull, Y push, and Y pull arms are along +X, ?X, +Y and ?Y directions respectively. Each magnetoresistive sensing unit comprises a TMR or GMR spin-valve having the same magnetic multi-layer film structure.

Abstract: An arrangement of at least two adjacently arranged layer structures is provided for a magnetoresistive magnetic field sensor. Each layer structure has at least one antiferromagnetic layer, and a first ferromagnetic layer with a first magnetic moment. Exchange coupling is present between the antiferromagnetic layer and the first ferromagnetic layer. A second ferromagnetic layer with a second magnetic moment is included, wherein the second ferromagnetic layer is antiparallel coupled to the first ferromagnetic layer via a non-magnetic coupling layer arranged between the first and second ferromagnetic layers. The magnetisation of the corresponding first and corresponding second ferromagnetic layers of the adjacently arranged layer structures differs from one another, and in particular is of substantially mutually opposed orientation.

Abstract: A magnetic sensor device includes a first chip including a first magnetic sensor, a second chip including a second magnetic sensor and a third magnetic sensor, and a support having a reference plane. The first magnetic sensor includes at least one first magnetic detection element, and detects a first component of an external magnetic field. The second magnetic sensor includes at least one second magnetic detection element, and detects a second component of the external magnetic field. The third magnetic sensor includes at least one third magnetic detection element, and detects a third component of the external magnetic field. The first chip and the second chip are mounted on the reference plane.

Abstract: A magnetic sensor system includes a magnetic field generator and a magnetic sensor. The magnetic sensor includes a plurality of MR elements. The plurality of MR elements are each configured so that a bias magnetic field in a second direction orthogonal to a first direction is applied to a free layer, and to change in resistance with a strength of a magnetic field component. A maximum strength of the magnetic field component applied to each of the MR elements is greater than or equal to 1.2 times the strength of a bias magnetic field.

Abstract: A magnetic field sensor for detecting motion of an object includes one or more magnetic field sensing elements configured to generate a magnetic field signal in response to a magnetic field associated with the motion of the object and a detector responsive to the magnetic field signal and to a threshold signal and configured to generate a comparison signal having edges occurring in response to a comparison of the magnetic field signal to the threshold signal. A threshold generator is configured to generate the threshold signal at a first level when a peak-to-peak value of the magnetic field signal is greater than a first predetermined value and at a second level when the peak-to-peak value of the magnetic field signal is less than a second predetermined value different than the first predetermined value.

Abstract: A sensor device comprises at least one test magnet which is designed to provide a magnetic test field, a first sensor element which is designed to capture a magnetic field and to provide a first sensor signal, wherein the first sensor signal comprises a first signal contribution on the basis of the magnetic test field, a second sensor element which is designed to capture a magnetic field and to provide a second sensor signal, wherein the second sensor signal comprises a second signal contribution on the basis of the magnetic test field, wherein the magnetic test field at the location of the first sensor element differs from the magnetic test field at the location of the second sensor element.

Abstract: A magnetic field sensor package comprises a chip carrier, a magnetic field sensor which is arranged on the chip carrier and designed to detect a magnetic field, an integrated circuit which is arranged on the chip carrier and designed to logically process sensor signals provided by the magnetic field sensor, and at least one integrated passive component which is electrically coupled to at least one of the magnetic field sensor or the integrated circuit.

Abstract: A magnetic field sensor is provided with improved stress compensation accounting for temperature. The magnetic field sensor includes a stress sensing, element, a temperature sensing element, a magnetic field sensing element, a memory, and an electronic circuitry. The memory is configured to store a first table. The first table identities a plurality of stress-to-sensitivity coefficients. Each of the plurality of stress-to-sensitivity coefficients is mapped to a different temperature value. The electronic circuitry is configured to use a temperature reading and a stress reading to calculate a stress difference between an expected stress and the stress reading.

Abstract: A camera module, according to one embodiment, comprises: a lens assembly; a lens driving unit for moving the lens assembly in the direction of the optical axis; a position sensor unit for detecting the position of the lens assembly; and a control unit for, on the basis of the position of the lens assembly detected by the position sensor unit, outputting, to the lens driving unit, a drive signal for moving the lens assembly to a target position, wherein the position sensor unit comprises a plurality of sensor units which have at least one output terminal connected with each other, an amplifier which is commonly connected with the plurality of sensor units, and an analog-digital converter which is connected to the amplifier.

Abstract: A system for measuring an angular position of a rotor with respect to a stator, wherein the rotor is rotatable around a rotation axis, the system comprising: a magnetic source mounted on the rotor, having at least four magnet poles and providing a periodically repetitive magnetic field pattern with respect to the rotation axis; a sensor mounted on the stator and comprising a plurality of sensor elements for measuring at least one magnetic field component of the magnetic field and for providing a measurement signal thereof; the sensor being located substantially centered around the rotation axis, in a plane substantially perpendicular to the rotation axis at a first distance from the magnetic source; the sensor elements being located substantially on a circle at a second distance from the rotation axis; a calculator that determines the angular position by calculating it from the measurement signals.

Abstract: A method and system for manufacturing potted electronic assemblies are described. Embodiments of the method and system may provide a potting compound having a first coefficient of thermal expansion different from a second coefficient of thermal expansion for a circuit board, provide a fiber reinforcement having a third coefficient of thermal expansion selected so that when the potting compound is combined with the fiber reinforcement the combined coefficient of thermal expansion is closer to the second coefficient of thermal expansion than the first coefficient of thermal expansion is to the second coefficient of thermal expansion, and apply the fiber reinforcement and the potting compound to the circuit board.

Abstract: Embodiments of the present disclosure generally relate to a sensor of magnetic tunnel junctions (MTJs) with shape anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one magnetic tunnel junctions (MTJ). The MTJ includes a free layer having a first edge and a second edge. The free layer has a thickness of about 100 ? or more. The free layer has a width and a height with a width-to-height aspect ratio of about 4:1 or more. The MTJ has a first hard bias element positioned proximate the first edge of the free layer and a second hard bias element positioned proximate the second edge of the free layer.

Abstract: An angle sensor includes a first magnetic sensor and a second magnetic sensor. The first magnetic sensor includes first and second detectors, and first and second analog-to-digital converters for converting analog detection signals generated by the first and second detectors into digital detection signals. The second magnetic sensor includes third and fourth detectors, and third and fourth analog-to-digital converters for converting analog detection signals generated by the third and fourth detectors into digital detection signals. The first to fourth analog-to-digital converters perform sampling at the same sampling time.

Abstract: A magnet flux absorber of the present invention has a soft magnetic layer having a first surface and a second surface that is a back surface of the first surface, as well as and at least one magnetically pinning portion that faces a part of the first surface of the soft magnetic layer or a part of the second surface of the soft magnetic layer. A region of the soft magnetic layer that faces the magnetically pinning portion is magnetized by the magnetically pinning portion in a direction that is different from a direction in which at least a part of remaining region of the soft magnetic layer is magnetized.

Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.

Abstract: A magnetoresistive device includes a magnetoresistor disposed over a substrate, a stress release structure covering a side surface of the magnetoresistor, an electrical connection structure disposed over the magnetoresistor, and a passivation layer disposed over the electrical connection structure and the stress release structure.

Abstract: The present disclosure relates to a current measuring system. The current measuring system includes a busbar, a magnetic field sensor chip encased by a sensor housing, wherein a geometry of the sensor housing is independent of a geometry of the busbar; and an adapter piece for receiving the sensor housing, said adapter piece being adapted to the geometry of the busbar, wherein the adapter piece is fixable to the busbar, wherein the magnetic field sensor chip is fixed in a predetermined measurement position when the sensor housing is received into the fixed adapter piece.

Abstract: Provided is a magnetic field detection device that includes a first soft magnetic body and a magnetic detector. The first soft magnetic body includes a first plate and a first protrusion. The first plate includes a first surface including a first outer edge. The first protrusion is provided at a first arrangement position in the first surface and includes a first tip on opposite side to the first surface. The first arrangement position is set back from the first outer edge. The magnetic detector is provided in the vicinity of the first tip.

Abstract: The present disclosure relates to a magnetic sensor that comprises a magnetic-sensing element and a magnetic-affecting element. The magnetic sensor is configured for detecting one or more properties, and/or changes therein, of a target magnetic-field. Further embodiments of the present disclosure relate to a sensor unit that houses and protects the magnetic sensor described herein. Further embodiments of the present disclosure relate to a system that comprises the magnetic sensor alone or the sensor unit described herein. Further embodiments of the present disclosure relate to a method for detecting changes in a target magnetic-field. The magnetic sensor described herein comprises a magnetic-sensing element and a magnetic-affecting element. The magnetic-affecting element attracts or attracts and focuses the target magnetic-field through the magnetic-sensing element.

Abstract: A magnetic sensor has a Hall IC that has a Hall element formed on a surface of the Hall IC, and a lead frame that supports the Hall IC. The lead frame includes a first region that is disposed in the vicinity of the Hall element and generates a first magnetic field due to a first eddy current generated when a measurement target magnetic field is applied, and second regions that are disposed away from the first region and generate a second magnetic field having an intensity that cancels the first magnetic field by means of second eddy currents generated when the measurement target magnetic field is applied.

Abstract: Methods and apparatuses for producing magnetoresistive apparatuses are provided. Here, structures are formed for defining regions of the same magnetization, magnets are magnetized, and structures are formed within the magnets of the regions, for example, in order to define magnetoresistive elements.

Abstract: A magnetic substance detection sensor includes a first support substrate, a magnet disposed on the upper main surface of the first support substrate so that a magnetization direction becomes parallel to the upper main surface of the first support substrate, a semiconductor chip disposed on the upper main surface of the first support substrate and having a magnetic field detection element configured to detect a magnetic field component in a specific direction, and a soft magnetic substance film disposed on the lower main surface of the first support substrate and extending in a direction parallel to the magnetization direction of the magnet.

Abstract: A method includes measuring a first property of a magnetic field using a bridge circuit with spatially separated bridge branches, and measuring a second property of the magnetic field using a magnetic field sensor located between the spatially separated bridge branches.

Abstract: An electric current sensor for detecting a leakage current from an electric vehicle charger. The current sensor includes a magnetic core having a gap formed therein, a first conductor wound around the magnetic core to form a first coil, a second conductor wound around the magnetic core to form a second coil, and a tunnel-magnetoresistance (TMR) sensor element arranged in the gap of the magnetic core. A difference between electric current flow in the first and second conductors produces a magnetic field in the gap of the magnetic core proportional to a leakage current, and the magnetic field produces a voltage in the TMR sensor element indicative of a value of the leakage current.

Abstract: A resettable bipolar switch sensor is disclosed which comprises a bipolar magnetic hysteresis switch sensor, a reset coil, an ASIC switch circuit and a power reset circuit. The bipolar magnetic hysteresis switch sensor comprises a substrate and a magnetoresistive sensing arm located on the substrate. The magnetoresistive sensing arm is of a two-port structure composed of one or more magnetoresistive sensing unit strings arranged in series, parallel, or series-parallel. The magnetization direction of a free layer of a TMR magnetoresistive sensing unit is determined by an anisotropy field Hk, and together with the magnetization direction of a reference layer and the applied magnetic field, it can orient in an N or S direction. The reset coil is located between the substrate along with the magnetoresistive sensing unit, or it is located on a lead frame below the substrate. The direction of the reset magnetic field is either N or S.

Abstract: Apparatus and methods provide sensing of quadrants, angles, or distance using magnetoresistive elements. A quadrant or angle sensor can have magnetoresistive elements split into multiple angles to generate an output with reduced harmonics. A distance sensor can have magnetoresistive elements split and spaced apart to generate an output with reduced harmonics. A biasing conductor can alternatingly carry different amounts of current (different in at least one of magnitude or direction) for DC offset compensation or cancellation.

Abstract: A position sensor is provided that can detect a position along a long stroke and that can limit an increase in size.

Abstract: A system for suppressing low frequency noise of magnetoresistive sensors, includes a device for measuring a magnetic field, the device including at least one magnetoresistive sensor, the magnetoresistive sensor having a first sensitivity at a first operating point and a second sensitivity at a second operating point, the sensitivity at the second operating point being low or zero; a modulator configured to switch the at least one magnetoresistive sensor from the first operating point to the second operating point; and a signal processor for processing the signal derived from the device for measuring a magnetic field.

Abstract: A system for suppressing low frequency noise of magnetoresistive sensors, includes a device for measuring a magnetic field, the device including at least one magnetoresistive sensor, the magnetoresistive sensor having a first sensitivity at a first operating point and a second sensitivity at a second operating point, the sensitivity at the second operating point being low or zero; a modulator configured to switch the at least one magnetoresistive sensor from the first operating point to the second operating point; and a signal processor for processing the signal derived from the device for measuring a magnetic field.

Abstract: A magnetic sensor of the present invention has an elongate element portion having a magnetoresistive effect and a pair of elongate soft magnetic bodies that are arranged along the element portion on both sides of the element portion with regard to a short axis thereof. Each soft magnetic body includes a central portion that is adjacent to the element portion from one end to another end of the element portion with regard to a long axis direction thereof and a pair of end portions that protrude from the central portion in the long axis direction. A width of at least one of the end portions gradually decreases in a direction away from the central portion in at least a part of the end portions in the long axis direction thereof.

Abstract: A current sensor that outputs an output signal according to a signal magnetic field that is generated by a current to be measured is provided. The current sensor includes at least one magnetic sensor, a temperature sensor, an amplifier, and an offset adjusting circuit. The magnetic sensor generates a sensor signal commensurate with the signal magnetic field. The temperature sensor detects an ambient temperature. The amplifier amplifies the sensor signal at an amplification rate commensurate with the detected temperature and generates the output signal. The offset adjusting circuit adjusts an offset of the output signal. The offset adjusting circuit adjusts an offset in accordance with a relationship (mathematical expression) that holds between an output signal under no signal magnetic field and an amplification rate corresponding to the temperature.

Abstract: A magnetic sensor suppressing bias magnetic field effects includes a magnetic detecting unit including first to fourth magneto-resistive elements to which a first magnetic field to be detected is applied, a differential amplifier into which the output voltage of the magnetic detecting unit is input, a first magnetic field generating conductor which, by a first feedback current output by the differential amplifier, applies to the magnetic detecting unit a second magnetic field to cancel the first magnetic field detected by the magnetic detecting unit, a bias magnetic field detector which detects a bias magnetic field applied to the magnetic detecting unit and outputs a second feedback current corresponding to the bias magnetic field, and a second magnetic field generating conductor which, by the second negative feedback current, applies to the magnetic detecting unit a correcting magnetic field to cancel the bias magnetic field detected by the magnetic detecting unit.

Abstract: Apparatus and methods provide sensing of quadrants, angles, or distance using magnetoresistive elements. A quadrant or angle sensor can have magnetoresistive elements split into multiple angles to generate an output with reduced harmonics. A distance sensor can have magnetoresistive elements split and spaced apart to generate an output with reduced harmonics. A biasing conductor can alternatingly carry different amounts of current (different in at least one of magnitude or direction) for DC offset compensation or cancellation.

Abstract: A current sensor includes a magnetic sensor device. The magnetic sensor device includes a magnetic sensor, a first magnetic layer, and a second magnetic layer in non-contact with the first magnetic layer. The magnetic sensor, the first magnetic layer, and the second magnetic layer are disposed across a virtual straight line and arranged in this order in a direction parallel to the virtual straight line. Different portions of magnetic flux generated by a current to be detected pass through the magnetic sensor, the first magnetic layer, and the second magnetic layer.

Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.

Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of tunneling magnetoresistance (TMR) structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.

Abstract: A magnetic field transducer mounting apparatus can include a first mount configured to fixedly couple to a side surface of a wafer test fixture magnet, and a second and third mount configured to adjustably position a magnetic field transducer in a predetermined location proximate a face of the wafer test fixture magnet.

Abstract: Three bridge circuits (101, 111, 121), each include magnetoresistive sensors coupled as a Wheatstone bridge (100) to sense a magnetic field (160) in three orthogonal directions (110, 120, 130) that are set with a single pinning material deposition and bulk wafer setting procedure. One of the three bridge circuits (121) includes a first magnetoresistive sensor (141) comprising a first sensing element (122) disposed on a pinned layer (126), the first sensing element (122) having first and second edges and first and second sides, and a first flux guide (132) disposed non-parallel to the first side of the substrate and having an end that is proximate to the first edge and on the first side of the first sensing element (122). An optional second flux guide (136) may be disposed non-parallel to the first side of the substrate and having an end that is proximate to the second edge and the second side of the first sensing element (122).