Abstract: In one aspect, radiation dosimeters are described herein comprising organic field effect transistors. Briefly, a radiation dosimeter comprises an organic field effect transistor having composition and/or electronic structure exhibiting a shift in threshold voltage as a function of radiation dose.

Abstract: Embodiments described herein provide methods and apparatus to determine water-to-liquid ratio and water volume fraction for high gas-volume-fraction wet-gas flows or multiphase flows.

Abstract: A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.

Abstract: Techniques are described to determine a thickness of individual layers of a plurality of metal layers that include a first metal layer disposed on a polymer material and a second metal layer disposed on the first layer, such that the first layer is between the polymer material and the second layer. A measurement device may determine a resistance of the plurality of metal layers and calculate (e.g., estimate) a thickness of the individual layers based on the resistance of the individual layers and based on a resistivity of individual metals used in the plurality of metal layers. The measurement device may determine whether the individual thicknesses are within predetermined thickness ranges to determine whether to pass a quality control test.

Abstract: A main power supply supplies a power supply voltage to a power supply terminal of a DUT. A control pattern generator generates a control pattern including a pulse sequence. A compensation circuit intermittently injects a compensation current to the power supply terminal of the DUT via a path different from that of the main power supply. A switch is arranged between an output terminal of a voltage source and the power supply terminal of the DUT, and is turned on and off according to the control pattern.

Abstract: Short-circuit current, maximum power, and open circuit voltage during a single flash are determined by varying intensity, voltage, and current. An apparatus determines the substrate doping and the series resistance of the solar cell. The series resistance of the cell is determined from a voltage step from the maximum power voltage operating point to the open-circuit condition. Methods are described for determining the substrate doping from stepping or sweeping the voltage. The first uses a voltage step and finds the change in charge that results. This determines a unique doping if the series resistance is known. The second uses data for a case of varying current, voltage, and light intensity, and compares this data to the case of varying voltage and intensity with no current. By transposing both cases into the steady state, agreement between the two data sets is found for unique doping and series resistance values.

Abstract: A method and apparatus for measuring thickness of a film in a solar cell provides for directing light emitted at multiple emission wavelengths, to a surface of the solar cell. Each emission results in the generation of a responsive photo current. The photo currents are read by a current meter having one contact coupled to a surface of the solar cell and another contact coupled to another surface. The currents associated with each of the different light emissions are identified and the thickness of a film in the solar cell is calculated based on the two currents or associated quantum efficiencies, and associated absorption coefficients. In one embodiment, the film thickness is the thickness of a CdS or other buffer film in a thin film solar cell.

Abstract: Properties of a multiphase mixture flow are measured in a blind-tee. The measured properties include the permittivity and/or the conductivity of the multiphase mixture flowing through a conduit. The permittivity and/or conductivity are measured at liquid-rich region(s) in a blind-tee section of the conduit and are used to determine properties of a liquid phase of the multiphase fluid flow, including one of the water conductivity, water in liquid ratio and water volume fraction. One or more electromagnetic sensors may be used in the blind-tee to measure the permittivity and/or conductivity. The sensors may be in contact with the multiphase flow or be disposed behind a dielectric window.

Abstract: An electrical resistance measurement apparatus includes a light irradiation unit that irradiates a conductive thin film with terahertz light, a reflection light detection unit that detects reflection light from the conductive thin film, and a computer containing a storage that stores correlation between the reflectance of the terahertz light from the conductive thin film and electrical resistance of the conductive thin film. The computer further containing a processor that determines, reflectance of the terahertz light from the conductive thin film based on a result of detection performed by the reflection light detection unit, and determines the electrical resistance of the conductive thin film based on the correlation and a result of the determination of the reflectance.

Abstract: A method for determining ionizing radiation including applying a constant voltage across an organic semiconducting material sensor prior to and after exposure of the sensor to the ionizing radiation; measuring and converting the current passing through the sensor proportional to the conductivity or resistivity of the sensor which in turn is proportional to the ionizing radiation in the sensor, into a proportional analog voltage value; and comparing the value obtained prior to and after exposure of the sensor to the ionizing radiation and computing the ionizing radiation based on the change in the value. An electronic device for determining ionizing radiation including an organic semiconductor resistor, a constant voltage source, and to a current to voltage converter, an analog to digital converter, and a microprocessor.

Abstract: A method may include illuminating a first area of a semiconductor utilizing a light source. The method may also include measuring at least one characteristic of electrical energy transmission utilizing a probe for placing at least one of at or near the illuminated first area of the semiconductor. The method may further include varying the measured at least one characteristic of the electrical energy transmission generated by the light from the light source incident upon the semiconductor while maintaining an intensity of the light source. Further, the method may include determining a sheet resistance for the junction of the semiconductor utilizing the varied at least one characteristic of the electrical energy transmission.

Abstract: A system for event detection uses a resistive switching device to record a detected event. The resistive switching device has a resistance adjustable by an applied voltage. The operation of the resistive switching device is controlled by a controller, which is configured to apply a switching voltage to the resistive switching device at a start time, and turn off the switching voltage in response to an event signal indicative of occurrence of an event. The resistance value of the resistive switching device resulting from the application of the switching voltage is indicative of the detection of the event and also the time of the occurrence of the event.

Abstract: A sensor configured to experience resistance changes in response to an external interaction is disclosed. The sensor comprises a first layer of a conductive material having a first electrode connected thereto; a second intermediate layer of a material having a resistance sensitive to said external interaction; and a third layer consisting of a first set of fingers interdigitated with a second set of fingers. The first set of fingers has a second electrode attached thereto whilst the second set of fingers has a third electrode attached thereto. The second layer comprises a layer formed of a quantum tunnelling composite. In a preferred embodiment, the first electrode is connected to one of said second electrode or said third electrode to make a parallel connection. A method for constructing such a sensing device for sensing an external interaction is also disclosed.

Abstract: A method and device for determining ionizing radiation. The method for determining ionizing radiation comprises the steps of applying a constant voltage across an organic semiconducting material sensor prior to and after exposure of the sensor to the ionizing radiation; measuring and converting the current passing through the sensor proportional to the conductivity or resistivity of the sensor which in turn is proportional to the ionizing radiation in the sensor, into a proportional analog voltage value; and if desired converting the analog voltage value into digital value; and comparing the analog/digital values obtained prior to and after exposure of the sensor to the ionizing radiation and computing the ionizing radiation based on the change in the analog/digital values.

Abstract: This invention relates to a device of electrodes for measuring water content in foundry sand, an apparatus for measuring water content in foundry sand, and a method and an apparatus for supplying water to a sand mixer. When the prior art device for measuring water content in the foundry sand is disposed in it, the size or shape of the device of the electrodes is limited.

Abstract: A method and a device for measuring dielectric characteristics by generating a microwave signal, dividing the signal into reference and sounding signals, irradiating a body with the microwave signal, receiving the reflected, reference and total signals and in detecting said signals. The irradiation is carried out by a waveguide wave, the wave number of which in the free space filled with dielectric, is selected within a range from 1.0 to 1.07 the propagation number of the waveguide wave.

Abstract: A method for detecting an electromagnetic wave includes: providing a carbon nanotube structure including a plurality of carbon nanotubes arranged along a same direction. The carbon nanotube structure is irradiated by an electromagnetic wave to be measured. The resistance of the carbon nanotube structure irradiated by the electromagnetic wave is measured.

Abstract: The present invention includes the use of conducting polymers as sensors in distributed sensing systems, as sensors and operating elements in multifunctional devices, and for conducting-polymer based multifunctional sensing fabrics suitable for monitoring humidity, breath, heart rate, blood (location of wounds), blood pressure, skin temperature, weight and movement, in a wearable, electronic embedded sensor system, as examples. A fabric comprising conducting polyaniline fibers that can be used to distribute energy for resistive heating as well as for sensing the fabric temperature is described as an example of a multifunctional sensing fabric.

Abstract: The inventive method for measuring dielectric characteristics of material bodies consists in generating a microwave signal, in dividing said signal into reference and sounding signals, in irradiating a body with the microwave signal when a waveguide probe contacts a tested material, in receiving the reflected, reference and total signals and in detecting said signals. The irradiation is carried out by means of a waveguide wave, the propagation number of which in the free space of the waveguide probe, which is filled with a prism-shaped dielectric insert,—“[?k2]0.5” is selected within a range from 1.0 to 1.07 the propagation number of the waveguide wave “[?k2?(m?/b)2+(n?/a)2]0.

Abstract: Herein is described a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of ionization current (e.g., 60Co gamma rays) is measured. A pressure cell device is described herein to carry out the method. For known semiconductors, the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method and pressure cell, it was determined that new materials BiOI, PbIF, BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors.

Abstract: A method includes detecting a plasmon resonance in a material based on a change in at least one electrical property of the material. For example, the material can be a sensor portion of an electrical circuit, wherein the method can further include: exposing the sensor portion to a test material; optically illuminating the sensor portion when the test material is present, and monitoring the change in the at least one electrical property of the sensor portion in response to the optical illumination. The monitored changed in the at least one electrical property of the sensor portion can provide information about the test material, such as the presence or absence of selected analytes and/or their binding affinities. In another example, the material is a part of a receiver for a plasmonic circuit. An apparatus for carrying out the method is also disclosed.

Abstract: According to one embodiment of the invention, photoelectron spectroscopy is used to determine the thickness of one or more layers in a single or multi-layer structure on a substrate. The thickness may be determined by measuring the intensities of two photoelectron species or other atom-specific characteristic electron species emitted by the structure when bombarded with photons. A predictive intensity function that is dependent on the thickness of a layer is determined for each photoelectron species. A ratio of two predictive intensity functions is formulated, and the ratio is iterated to determine the thickness of a layer of the structure. According to one embodiment, two photoelectron species may be measured from a single layer to determine a thickness of that layer. According to another embodiment, two photoelectron species from different layers or from a substrate may be measured to determine a thickness of a layer.

Abstract: An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.

Abstract: An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.

Abstract: Oscillating magnetic flux energy is coupled with coated material. The oscillating magnetic energy is used to measure the electrical impedance and magnetic permeability of the material. Using known values of conductivity and permeability, is this possible to measure the extent of diffusion, including concentration, of the coating into the substrate. The method of this invention does not require destructive testing of the target material.

Abstract: A method of inferring the existence of light by means of a measurement of the electrical characteristics of a nanotube bound to a dye first of all involves bringing a nanotube derivatized with a dye into contact with two conductor tracks. An electrical parameter of the nanotube is then measured via the two conductor tracks without exposure to light. Then the dye bound to the nanotube is irradiated, and the electrical parameter of the nanotube is then measured via the two conductor tracks with exposure to light. The difference between the value of the electrical parameter measured without exposure to light and the corresponding parameter measured with exposure to light is then established. Finally it is inferred, as a function of the difference established, whether light is present.

Abstract: Apparatus for localizing production errors in a photovoltaic element which is formed substantially by a semiconductor substrate in the form of a wafer, on opposite main surfaces of which are arranged electrical conductors for transporting electrical charge carriers. The apparatus includes at least one first electrode in electrical contact with a first main surface of the substrate and displaceable over the substrate, and a second electrode to be arranged in electrical contact with the conductors on the second main surface. A voltage measuring device is provided for measuring the voltage between the at least one first and the second electrode subject to the position of the first electrode on the first main surface, and a device for adjusting a bias over the electrical conductors on the opposite main surfaces of the substrate.

Abstract: In a method for evaluating a semiconductor crystal substrate which includes a collector layer, a base layer, and an emitter layer and is used for a heterojunction bipolar transistor, a semiconductor crystal substrate to be evaluated which includes a crystal layer whose composition is the same as that of the base layer is produced. Excitation light is irradiated to the semiconductor crystal substrate to be evaluated and a change with time in an intensity of photoluminescence from the crystal layer is measured before the intensity becomes saturated. A change with time in a current gain of the heterojunction bipolar transistor produced using the semiconductor crystal substrate is measured based on the change with time in the intensity.

Abstract: An apparatus for measuring electric conductivity having three electrodes brought into contact with a substance to be measured. The electrodes include a detection electrode for detecting electric conductivity of the substance to be measured, and two AC current supply electrodes disposed on both sides of the detection electrode at respective distances, and an AC current of the same phase is applied to the two AC current supply electrodes. This apparatus provides stabilized measurement of the electric conductivity of a substance to be measured with a high accuracy.

Abstract: The invention concerns a testing device for measuring radiation, immunity and electromagnetic characteristics of an object to be tested (1), comprising a conductive structure (53) enclosing a testing volume wherein can be placed said object, said structure being provided with an opening (56) capable of being closed, said testing device further comprising a set of internal conductors called septa (52), at least two in number, each septum defining in said testing volume, by its configuration in the structure, an electromagnetic coupling with said object; at least a septum is arranged in such a way that its electromagnetic plane is separate and not parallel to the electromagnetic plane of a t least another septum.

Abstract: Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

Abstract: An apparatus for measuring electric conductivity comprises three electrodes brought into contact with a substance to be measured. The electrodes include a detection electrode for detecting electric conductivity of the substance to be measured, and two AC current supply electrodes disposed on both sides of the detection electrode at respective distances, and an AC current of the same phase is applied to the two AC current supply electrodes. This apparatus provides stabilized measurement of the electric conductivity of a substance to be measured with a high accuracy.

Abstract: An electric conductometer comprising at least two electric conductivity measuring electrodes each body of which is made from a conductive metal and each surface of which is formed by a titanium oxide layer as an electrode surface, a space for storing a substance to be measured formed between the electrode surfaces of the electrodes, and means for irradiating light to the electrode surfaces. Since the electrode surfaces are formed from the titanium oxide layers, organic substances contained in a measuring system are decomposed and prevented automatically from adhering or being adsorbed to the electrode surfaces. Consequently, electric conductivity can be measured stably and accurately at all times without substantially requiring any cleaning.

Abstract: A method and apparatus for aligning a charged particle beam with an aperture includes providing a hollow beam aperture means adapted for shaping a charged particle beam into a hollow charged particle beam. Then direct the charged particle beam through the aperture. Provide deflection coils for deflecting the charged particle beam relative to the aperture. Vary the current to the alignment deflection coils while measuring the aperture electrical current generated by charged particles reaching the hollow beam aperture as a function of the current to the alignment deflection coils. Then adjust the current in the alignment deflection coils based on the aperture electrical current to center the charged particle beam on the hollow beam aperture. Preferably, separate hollow beam and peripheral beam apertures with associated sensing and current are used to center the beam on respective ones of the apertures.

Abstract: An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.

Abstract: A combined impedance and fluorescence particle detecting system comprising a divider separating a first and a second chamber, the divider having a small orifice enabling flow of liquid sample between the chambers, and technique for determining an impedance signal representative of variations in impedance at the orifice due to the flow therethrough of particles within the liquid sample; a light source for irradiating the particles within the orifice and a detector for receiving a fluorescence signal emitted by the particles within the orifice, such that the impedance signal and fluorescence signal are substantially synchronous and wherein the divider comprises a plate through which the orifice passes, the plate being disposed within the system such that the direction of measurement of impedance and the incident direction of light at the orifice are both substantially perpendicular to the plane of the plate.

Abstract: A reading apparatus has a sensor unit which is arranged on a substrate to read an object to be detected, a driver circuit unit which is arranged on the substrate to supply a drive signal for driving the sensor unit, and a static electricity protection portion, which is formed to cover at least a portion of the upper surface of the driver circuit unit, and at least a portion of which has electrical conductivity.

Abstract: According to the disclosed embodiment of the present invention, a system and method for detecting properties of a material are provided using a detection apparatus including a pair of reflecting surfaces, and directing electromagnetic radiation into the apparatus. The radiation is focused through a slab of material having a negative refractive index to a subwavelength spot. Electromagnetic radiation is detected to determine characteristics of a sample under test.

Abstract: An electric conductometer comprising at least two electric conductivity measuring electrodes each body of which is made from a conductive metal and each surface of which is formed by a titanium oxide layer as an electrode surface, a space for storing a substance to be measured formed between the electrode surfaces of the electrodes, and means for irradiating light to the electrode surfaces. Since the electrode surfaces are formed from the titanium oxide layers, organic substances contained in a measuring system are decomposed and prevented automatically from adhering or being adsorbed to the electrode surfaces. Consequently, electric conductivity can be measured stably and accurately at all times without substantially requiring any cleaning.

Abstract: A method for determining the doping concentration profile of a specimen of semiconductor material. The specimen is positioned between a pair of electrodes, the specimen being disposed on one of the electrodes and being spaced from the other electrode by an air gap. A signal is provided corresponding to the total capacitance between the two electrodes. A region of the surface of the specimen is illuminated with a beam of light of wavelengths shorter than that corresponding to the energy gap of the semiconductor material and which is intensity modulated at a predetermined frequency. A variable DC bias voltage is applied between the pair of electrodes, the variable bias voltage varying between that corresponding to accumulation and that corresponding to deep depletion for the specimen. The intensity of the light beam is low enough and the speed at which the DC bias voltage is varied is fast enough such that no inversion layer is formed at the surface of the specimen.

Abstract: The invention provides a way to improve the voltage stand-off characteristics of photoconductors, including both surface and bulk photoconductors. In a preferred embodiment, the invention comprises a photoconductor device having a semiconductor substrate with electrodes thereon, and a light source which illuminates the surface of the device in a pattern which is configured to increase the stand-off voltage of the device. A method according to the invention includes the steps of directing light onto the surface of the photoconductor thereby forming an illuminated area thereon, measuring the current draw of the photoconductor, and moving the illuminated area along the surface of the photoconductor until the current draw is minimized.

Abstract: A contactless sheet resistance measurement apparatus and a method for measuring the sheet resistance of a desired layer of a first conductivity type, formed upon a substrate of an opposite conductivity type, is disclosed. The apparatus comprises a junction capacitance establishing means, a point location alternating current AC photovoltage generating means for generating a laterally propagated AC photovoltage, an attenuation and phase shift monitoring means for monitoring the .laterally propagated AC photovoltage, and a sheet resistance signal generating means responsive to the-junction capacitance establishing means, the AC photovoltage generating means, and the attenuation and phase shift monitoring means for generating an output signal indicative of a sheet resistance R.sub.S of the desired layer according to a prescribed sheet resistance model.

Abstract: The invention relates to a method of inspecting and correcting a thin film transistor liquid crystal substrate and an apparatus therefor, where a plurality of scan lines and signal lines are connected electrically in common at each one terminal side respectively, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of applying voltage between the scan lines and the signal lines, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of stopping the voltage application, and the scan lines and the signal lines relating to variation of the heating state are detected from difference or quotient between an infrared image at the voltage applying state and an infrared image at the stopping state of voltage application, thereby a pixel address with a shortcircuit defect occurring is specified.

Abstract: A temperature sensing system has a signal means which provides a signal representative of a temperature responsive luminescence, where the luminescence has a characteristic time-rate-of-decay. A means for comparison is connected to the signal means and samples the signal during two time intervals, the first interval overlapping the second. The averages of the samples are compared to provide a difference signal representative of the difference between the two measured averages. Control means coupled to the comparison means provide an output representing the temperature as a function of the time-rate-of-decay, by adjusting the overlapping intervals so that the difference signal converges to a preselected limit.