Abstract: A decode circuit for selecting one of a plurality of output lines in dependence on the status of a plurality of input lines, the circuit comprising: a first decode arrangement comprising: a first decode node; first precharging circuitry for charging the first decode node to a charging potential; first discharging circuitry comprising a plurality of switching means each operable in dependence on the status of a respective one of the input lines to couple the first decode node to a discharging potential, and first selection circuitry coupled to a respective one of the output lines and operable in response to a first enable signal to select that output line if the first decode node has not discharged; and a second decode arrangement comprising: a second decode node; second precharging circuitry for charging the second decode node to a charging potential; second discharging circuitry comprising a plurality of switching means each operable in dependence on the status of a respective one of the input lines to coupl

Abstract: A plurality of sets of circuits are provided, each of which generates an impedance code through the use of an impedance control circuit in association with a resistive element connected to an external terminal, and each of which varies the impedance in accordance with such an impedance code. The impedance control circuit includes an impedance comparator which is formed equivalently to the resistive element and the plurality of sets of circuits, and which performs an impedance comparison with each of a plurality of replica circuits to form an up signal that increases the impedance and a down signal that decreases the impedance. Counters are provided adjacent to the individuals of the plurality of sets of circuits to thereby generate the impedance codes in response to the up signal and the down signal.

Abstract: An apparatus for a multiplexor circuit includes a passgate circuit coupled to receive input signals and corresponding select signals comprising a subset of the input signals and select signals received by the multiplexor. The apparatus also includes a default circuit coupled to receive the select signals and coupled to an output node of the passgate circuit. If none of the select signals is asserted, the default circuit supplies a default voltage on the output node. Other passgate circuits and default circuits may be included coupled to other subsets of the input signals and select signals, and an output circuit may be included with inputs coupled to the output nodes of the passgate circuits. The default voltage may represent a logical value which allows the value from another passgate circuit to control the output of the output circuit.

Abstract: It is an object of the invention to provide a circuit configuration wherein a decoder control signal ?2 is rendered unnecessary between an address buffer control signal ?1 and the decoder control signal ?2, thereby implementing speed-up in operation of a decoder circuit. The object is attained by adoption of a configuration wherein a buffer is integrated with a decoder, so that an output current path of transistors making up the address buffer, and that of transistors making up the decoder are connected with each other in series, thereby forming an output current path of decoder output. With the invention, speed-up in operation, lower power consumption, and higher cycle, of decoder circuits, can be achieved. Further, in the case of using the decoder circuits in a semiconductor memory, it is possible to achieve shortening of access time, lower power consumption, and higher cycle with reference to the semiconductor memory.

Abstract: A hierarchical memory structure having memory cells, and sense amplifiers and decoders coupled with the memory cells to form first tier memory module, and subsequent tiers being formed by having (n?1)-tier memory modules, which are coupled with (n)-tier sense amplifiers and (n)-tier decoders. Also provided are a single-ended sense amplifier having sample-and-hold reference, and a charge-share limited-swing-driver sense amplifier; an asynchronously-resettable decoder; a wordline decoder having row redundancy; a redundancy device having redundant memory cells operated by a redundancy controller; a diffusion replica delay circuit; a high-precision delay measurement circuit; and a data transfer bus circuit imposing a limited voltage swing on a data bus. Methods are provided for a write-after-read operation without an interposed precharge cycle, and write-after-write operation with an interposed precharge cycle are provided, either operation being completed in less than one memory access cycle.

Abstract: A method and system of temperature compensated integrated circuits. Operating characteristics of integrated circuitry are enhanced by application of temperature compensation.

Abstract: A decode circuit for selecting one of a plurality of output lines in dependence on the status of a plurality of input lines, the circuit comprising: a first decode arrangement comprising: a first decode node; first precharging circuitry for charging the first decode node to a charging potential; first discharging circuitry comprising a plurality of switching means each operable in dependence on the status of a respective one of the input lines to couple the first decode node to a discharging potential; and first selection circuitry coupled to a respective one of the output lines and operable in response to a first enable signal to select that output line if the first decode node has not discharged; and a second decode arrangement comprising: a second decode node; second precharging circuitry for charging the second decode node to a charging potential; second discharging circuitry comprising a plurality of switching means each operable in dependence on the status of a respective one of the input lines to coupl

Abstract: An integrated circuit (10) includes a multiple voltage digital multiplexer circuit (30) for multiplexing digital signals provided at different supply voltage levels. In one form, the multiplexer (30) includes an analog multiplexer (32) for receiving the digital signals, a level shifter (40) coupled to the output of the analog multiplexer (32), and a supply voltage multiplexer (34) for providing one of various supply voltages used on the IC corresponding to the signals being multiplexed. A control circuit (38, 39) is used to control the input selection of the analog multiplexer (32) as well as the supply voltage multiplexer (34) for providing the correct supply voltage to the level shifter (40). This provides the ability to multiplex digital signals of differing voltage levels onto a single pad on the IC (10).

Abstract: A method and apparatus for selectably providing single-ended and differential signaling with controllable impedance and transition time is provided. According to the method and apparatus, a differential signal can be transmitted over two wires or two single-ended signals can be transmitted over the two wires. According to the method and apparatus, termination may be selected among a single-reference termination, a center termination, or a high-impedance termination. Regardless of the type of termination selected, a capability for dynamic control of the termination impedance is provided. Moreover, an ability to change impedances of termination elements to maintain a desired termination impedance for both single-reference termination and center termination modes by shifting bits is provided. Also, a capability for dynamic control of transition times of signals is provided.

Abstract: A CMOS inverter capable of operating at low voltages is provided. The gate of a p-channel MOS transistor and the gate of an n-channel MOS transistor are AC coupled to an input terminal via first and second capacitors, respectively. Signals whose amplitude centers are optimized according to the threshold voltages of the p- and n-channel MOS transistors by bias voltages from first and second variable voltage sources, respectively, are supplied to the gates of these MOS transistors. In consequence, the CMOS inverter can operate at high speeds at low power supply voltages without being affected by the threshold voltages.

Abstract: A reverse biasing logic circuit is disclosed for limiting standby leakage electric current losses during circuit operation. The circuit includes a logic function circuit having one or more logic transistors that receive an input and perform a logic function operation to generate an output. A power source transistor connects to the logic function circuit and receives a control signal that changes node voltages of the one or more logic transistors between an active mode and a standby mode. During the standby mode, the power source transistor causes reverse biasing of at least one of the one or more logic transistors which prevents a leakage electric current flow between the power source transistor and the one or more logic transistors.

Abstract: A MOSFET logic circuit for performing a logic AND operation is presented including three transistors, wherein at least two input signals are provided to the circuit and an output signal indicative of an AND operation performed on a first and second input signal of the at least two input signals is output from the circuit. In another embodiment, a MOSFET true and complement signal generating signal is presented including at least one MOSFET inverter logic circuit, and first and second MOSFET AND logic circuits, wherein each of the first and second AND logic circuits includes three transistors. The true and complement signal generating circuit receives first and second input signals and outputs a true signal and a complement signal indicative of the first input signal.

Abstract: This application proposes a new logic circuit including the 1st selector (S1) in which the control input S is controlled by the first input signal (IN1), the input I1 or I0 is controlled by the second input signal (IN2), and the output O is connected to the first node (N1), and the 3rd selector (S3) in which the control input S is controlled by the first node (N1), the input I1 is controlled by the third input signal (IN3), the input I0 is controlled by the first input signal (IN1), and the output is connected to the first output signal (OUT1).

Abstract: An address decoder having pre-decode logic circuitry positioned in between ends of final decode logic circuitry is provided. Such an address decoder yields less wire load, less gate load, less power consumption, and increased speed due to the pre-decode logic circuitry having to be capable of only driving a signal over half the length of a final decoder. Further, a method to select memory elements from a memory array using centrally positioned pre-decode logic circuitry is provided.

Abstract: A logic gate that includes a first differential amplifier and a feedback circuit. The first differential amplifier has a number of first (e.g., non-inverting) inputs and a second (e.g., inverting) input, receives and senses input signals applied to the non-inverting inputs, and provides a differential output that is a particular logic function (e.g., an ‘OR’) of the input signals. The non-inverting inputs may correspond to the gates of a number of transistors coupled in parallel to form an OR function. The feedback circuit detects the (e.g., non-inverting node of the) differential output and provides a control signal for the inverting input of the first differential amplifier. The logic gate typically further includes a second differential amplifier that senses and further drives the differential output.

Abstract: A column decoder of a semiconductor memory device is provided. A column select line driver of the column decoder includes a NAND gate that performs a NAND operation on an output signal of a pre-decoder and a column select line enable signal and provides an output signal to a driver that selects a column select line. The column select line driver including the NAND gate is smaller than a conventional column select line driver including a NOR gate, thereby reducing the chip size of the memory device and decreasing a logic delay and a load.

Abstract: A predecoder circuit for use in association with a memory circuit is shown to have a dynamic NAND gate formed by series-coupled transistors controlled by a bank active select signal and a row address selection signal. The predecoder circuit also includes a precharge circuit coupled to the dynamic NAND gate and controlled by a precharge signal. The predecoder circuit further includes a first inverter having an input terminal electrically coupled to the dynamic NAND gate and an output terminal selectively electrically connectable to at least one row decoder circuit for the memory circuit. The predecoder circuit finally includes a second inverter arranged in feedback with the first inverter to form a latch.

Abstract: A decoder includes multiple decode gates, each to provide one bit of a decoded output signal. At least two of the decode gates share a transistor. According to one aspect, each of the multiple decode gates is a skewed gate.

Abstract: The present invention describes a multi-stage decoder and method of decoding utilizing a pseudo NAND or pseudo AND gate in one of the stages. This invention presents a decoder comprising a first stage circuit having two or more first inputs which generates one or more first outputs; and a second stage circuit having at least one second input and at least one second output, wherein the one or more first outputs are the same as the at least one second input, wherein at least one of the group consisting of the first stage circuit and the second stage circuit includes either a pseudo AND gate or a pseudo NAND gate. This invention presents a method of decoding, comprising the steps of generating a signal responsive to two or more address bits and enabling a decoder by the generated signal.

Abstract: The present invention provides a precharge circuit that has a first precharged node, a second precharged node, and a latch device. The first precharged node is charged to a high value during a precharge state. In response to a transition from the precharge state to an evaluate state, it either discharges to a low value or remains charged at its high value. The second precharged node has a value in the evaluate state that is based on the value of the first precharged node upon the circuit transitioning to the evaluate state. The latch device is connected to the second precharged node for latching this value in the evaluate state. With the latching device, this value is not affected by the first precharged node once the circuit has sufficiently transitioned to the evaluate state.

Abstract: A method is described that involves driving a first current through a line and a termination resistance so that a logical value on the line changes from a first logical value to a second logical value. The method also includes holding the second logical value on the line by driving a second current through the line and the termination resistance where the second current less than the first current. An apparatus is described that includes a driver that drives a first current through a line and a termination resistance so that a logical value on the line changes from a first logical value to a second logical value. The driver holds the second logical value on the line by driving a second current through the line and the termination resistance. The second current is less than said first current.

Abstract: A multilevel logic gate for processing digital data in a semiconductor application is provided. The multilevel logic gate comprises, two or more signal input leads for receiving signal input, two or more signal output leads for outputting signal results and a symmetrical structure of an even number of transistor circuit pairs for combining and amplifying the input signals, the symmetrical structure directly interfacing the input leads. The symmetrical structure causes any input signal to propagate through the structure to output at a same latency as any other input signal to the structure.

Abstract: A decoder element is provided with an output, whereby an output signal with one of three different possible potentials is produced. The output signal may have a value of either a first potential, a second potential, and a third potential, where the second potential lies between the first potential and the third potential. The output signal is produced according to voltage values of input signals at terminal connections of the decoder element.

Abstract: A clocked logic gate circuit is constituted so that a switch unit is constituted by a logic block and a reference MOS transistor, the source of the reference MOS transistor is connected to one output of the logic block, the gate of the reference MOS transistor is connected to the other output of the logic block, and MOS transistors (input transistors) constituting the logic block are connected in parallel. With this arrangement, complementary inputs are not required and a driving MOS transistor and an input transistor (or a driving MOS transistor and a reference MOS transistor) can be connected in series. As a result, a circuit is obtained which is simpler than the double rail logic in constitution is facilitated and can be operated at a higher speed than a CMOS logic circuit and a path transistor logic circuit.

Abstract: A CMOS inverter capable of operating at low voltages is provided. The gate of a p-channel MOS transistor and the gate of an n-channel MOS transistor are AC coupled to an input terminal via first and second capacitors, respectively. Signals whose amplitude centers are optimized according to the threshold voltages of the p- and n-channel MOS transistors by bias voltages from first and second variable voltage sources, respectively, are supplied to the gates of these MOS transistors. In consequence, the CMOS inverter can operate at high speeds at low power supply voltages without being affected by the threshold voltages.

Abstract: The present invention provides a precharge circuit that has a first precharged node, a second precharged node, and a latch device. The first precharged node is charged to a high value during a precharge state. In response to a transition from the precharge state to an evaluate state, it either discharges to a low value or remains charged at its high value. The second precharged node has a value in the evaluate state that is based on the value of the first precharged node upon the circuit transitioning to the evaluate state. The latch device is connected to the second precharged node for latching this value in the evaluate state. With the latching device, this value is not affected by the first precharged node once the circuit has sufficiently transitioned to the evaluate state.

Abstract: A circuit is designed with a decode circuit (313-315) having a first output terminal (319). The decode circuit is coupled to receive an address signal (81, 82, 85) having a first voltage range for producing a first output signal having one of a first and second logic levels. An output circuit (307, 309) is coupled to receive the first output signal and a power supply signal. The output circuit produces a second output signal having a second voltage range. A first latch transistor (301) is coupled to receive the second output signal. The first latch transistor is arranged to couple the first output terminal to a voltage terminal (209) in response to one of a first and second logic state of the second output signal. A second latch transistor (317) is coupled to receive the second output signal.

Abstract: The integrated circuit includes an input path circuit with an address path having an input buffer for providing address signals to a register. A separate clock path having an input buffer provides a clock signal for clocking the register. The input buffers of both the address path and the clock path include input buffer cells configured to reduce timing delay differences caused by process variations while minimizing current leakage. An exemplary input buffer cell described herein includes a first inverter stage with a pair of NMOS devices connected in series with a PMOS device and a second inverter stage having an additional PMOS device connected along a feedback path around an inverter. The PMOS device along the feedback path operates to assist the pair of NMOS devices to pull a voltage input to the inverter to a high logic state, when an input to the cell is held low, to prevent leakage current through the inverter.

Abstract: This application proposes a new logic circuit including the 1st selector (S1) in which the control input S is controlled by the first input signal (IN1), the input I1 or I0 is controlled by the second input signal (IN2), and the output O is connected to the first node (N1), and the 3rd selector (S3) in which the control input S is controlled by the first node (N1), the input I1 is controlled by the third input signal (IN3), the input I0 is controlled by the first input signal (IN1), and the output is connected to the first output signal (OUT1).

Abstract: A regenerative tie-high, tie-low cell (circuit) that provides unconditionally stable logic (1 and 0) output states used to tie off logic inputs. The circuit of this invention eliminates any current flow through p-channel/n-channel transistor pairs found in many conventional circuits and adds a regenerative transistor 42 to assure rapid response in achieving the proper logic output states. In one preferred embodiment, the circuit consists of only three CMOS transistors 40-42 that reduce the silicon area required, lowers the cost, and improves the overall reliability.

Abstract: To speed up the operation of a decoder circuit, reduce the power consumption of the decoder circuit and increase the cycle, each circuit such as a buffer, a predecoder and a main decoder in the decoder circuit include a semiconductor logic circuit wherein the number of columns of transistors for pulling down an output node is small even if the number of inputs is large, and the true output signal and a complementary output signal having approximately the same delay time are acquired and the output pulse length of each circuit in the decoder circuit is reduced. By virtue of this arrangement, the operation of the decoder circuit can be sped up, the power consumption can be reduced, the cycles can be increased and, in a semiconductor memory, for example, the reduction of access time and power consumption and the increase of the cycles are enabled.

Abstract: A decoder with reduced complexity includes at least one OR circuit section and at least one AND circuit section. The at least one OR circuit section may include first and second circuit lines mutually connected and respectively receiving as inputs an address signal and an inverted address signal. The at least one AND circuit section may include first and second circuit lines which respectively receive as inputs the inverted address signal and the address signal. The at least one OR circuit section and the at least one AND circuit section may be connected to first and second booster circuits. Furthermore, the at least one OR circuit section may also include a virtual ground.

Abstract: According to one embodiment (100), high speed, reduced power logic circuits (114-1 to 114-16) can have load impedances that are changed synchronously with input signals. A load impedance control circuit (104) can provide a load impedance control signal LC synchronously with a clock signal CLK. The amplitude of the load impedance control signal LC can be less than a power supply voltage VCC. The load impedance control signal LC can be supplied to the gate of a PMOS load transistor (116) in a logic circuit (114-1). When NMOS logic transistors (118 and 120) are turned on, PMOS load transistor (116) can have a high impedance due to the load impedance control signal LC. In this way, the potential at the input of inverter (122) can be rapidly changed to quickly obtain a decoder output value X0.

Abstract: This application proposes a new logic circuit including the 1st selector (S1) in which the control input S is controlled by the first input signal (IN1), the input I1 or I0 is controlled by the second input signal (IN2), and the output O is connected to the first node (N1), and the 3rd selector (S3) in which the control input S is controlled by the first node (N1), the input I1 is controlled by the third input signal (IN3), the input I0 is controlled by the first input signal (IN1), and the output is connected to the first output signal (OUT1).

Abstract: A circuit is designed with a decode circuit (313-315) having a first output terminal (319). The decode circuit is coupled to receive an address signal (81, 82, 85) having a first voltage range for producing a first output signal having one of a first and second logic levels. An output circuit (307, 309) is coupled to receive the first output signal and a power supply signal. The output circuit produces a second output signal having a second voltage range. A first latch transistor (301) is coupled to receive the second output signal. The first latch transistor is arranged to couple the first output terminal to a voltage terminal (209) in response to one of a first and second logic state of the second output signal. A second latch transistor (317) is coupled to receive the second output signal. The second latch transistor is arranged to couple the first output terminal to a reference terminal (318) in response to another of the first and second logic state of the second output signal.

Abstract: A circuit (100) for generating configurable device signatures is disclosed. The circuit (100) includes a combinatorial logic section (102) that receives a number of information signals, and according to the logic of the information signals, activates one of a number of configuration signals (CONFIG0-CONFIGn). The configuration signals (CONFIG0-CONFIGn) are received by a signature option section (200). The signature option section (200) includes a number of conductive options (210-0 to 210-n and 212) that enable a unique signature (SIG0-SIG15) to be generated in response to each of the configuration signals (CONFIG0-CONFIGn). In the preferred embodiment, the conductive options (210-0 to 210-n and 212) are configured by way of a final metallization layer option.

Abstract: A method and structure for decoding n input signals and their complements to one of m output signals is provided. A capacitive network is provided having m output nodes. The output nodes are precharged to a given voltage value. N input signals and their complements are provided each having either a high value or a low value. At least one but less than all of the output nodes are discharged to a value less than the given voltage but greater than ground in output patterns responsive to given input patterns of the true and complement values of the input signals. The output patterns of the discharged nodes is such as to provide one and only one discharged or one and only one undischarged node for any given pattern of input signals. Preferably the capacitive network includes NMOS inversion capacitors.

Abstract: A wordline decoder circuit and method of decoding a wordline input signal are provided. A first decoder receives multiple inputs to be evaluated. The first decoder includes a first precharge device for precharging a first node and a first discharge device to enable discharging the first node. A first clock signal enables the first discharge device. The first clock signal disables the precharge device. A clock delay circuit receives the first clock signal and generates a delayed clock signal. A second logic is coupled to the first decoder. The second logic provides a wordline output. The second logic wordline output is enabled responsive to the delayed clock signal and is disabled responsive to the first clock signal.

Abstract: CMOS buffer circuits are provided having multiple stages of driving transistors defining a fast "1" data path and a fast "0" data path for transmitting data signals from the input to output of the buffer. Each stage before the last stage in each of the data paths has at least one nulling transistor coupled to the driving transistor of the stage. Separate from the data paths, the nulling transistors of each data path are operated to synchronously null the driving transistors of the data path to prepare such driving transistors for the next fast transition in the input data signal. Another nulling transistor may be also coupled to the driving transistor of each stage before the last stage of each data path which prevents the data path from floating when the data path is not transmitting a transition of the input signal to output of the buffer.

Abstract: A semiconductor memory device comprising a plurality of row decoders, each having a precharge circuit connected to receive a precharge signal and a decode circuit connected to receive address signals. A level-shifted precharge signal is input to the precharge circuits.

Abstract: Bus driver having a P-channel output transistor (T1) for driving a first bus terminal (6) from a positive supply terminal (2), an N-channel output transistor (T2) for driving a second bus terminal (12) from a negative supply terminal (4), a P-channel driver transistor (T3) and an N-channel driver transistor (T4) series connected between the positive (2) and the negative (4) supply terminal. The control electrodes of the P-channel transistors (T1, T3) are interconnected and the control electrodes of the N-channel transistors (T2, T4) are interconnected to obtain a fixed relationship between the currents through the P-channel transistors (T1, T3) and through the N-channel transistors (T2, T4). The conduction of the driver transistors (T3, T4) is controlled by two floating control voltage sources (22, 24) which are connected between the interconnection node (20) of the driver transistors (T3, T4) and the respective control electrodes of the driver transistors.

Abstract: Address decoder of the present invention includes a latch circuit for latching an address signal, a logical circuit for decoding output signal from the latching circuit and a decoding circuit for decoding an output signal from the logical circuit. The address signals are inputted to the latch circuit during a time period in which a clock signal is at a first level and latched during a time period in which the clock signal is at a second level. The logical circuits unconditionally initialize the output signal from the latch circuit when the clock signal being at first level.

Abstract: A first pull-up transistor has a gate coupled to a clock signal line and a drain coupled to both a first pull-down transistor and a voltage clamp. A second pull-up transistor has a gate that is also coupled to the clock signal line and a drain coupled to both a second pull-down transistor and a voltage clamp. A shared pull-down transistor has a gate that is also coupled to the clock signal line and a drain coupled to both the first and second pull-down transistors. This circuit may be found useful in clock buffering applications.

Abstract: In a semiconductor memory device including memory cells, first and second decoders generate first and second selection signals, and a driver circuit generates a drive signal for driving the memory cells. The driver circuit includes a transfer gate, controlled by the first selection signal, thus passing the second selection signal to generate the drive signal.

Abstract: This application proposes a new logic circuit including the 1st selector (S1) in which the control input S is controlled by the first input signal (IN1), the input I1 or I0 is controlled by the second input signal (IN2), and the output O is connected to the first node (N1), and the 3rd selector (S3) in which the control input S is controlled by the first node (N1), the input I1 is controlled by the third input signal (IN3), the input I0 is controlled by the first input signal (IN1), and the output is connected to the first output signal (OUT1).

Abstract: A system for simplifying and expediting estimation of the gate RC delay and/or the determination of transistor widths for a given gate RC delay in a CMOS inverter circuit. The system determines gate RC delay as a function of transistor width. Alternatively, appropriate transistor widths may be determined based on a desired optimum gate RC delay. An analytical expression is established to predict RC induced gate propagation delay as a function of readily available technical parameters in the early stage of design. The analytical expression has been found to describe gate RC delay in CMOS inverter circuits incorporating 0.25 micron (or even smaller) manufacturing technology.

Abstract: A NOR gate including a pull-down circuit coupled to a pull-up circuit. The NOR gate is configured to drive an output signal to a low logic state at a substantially uniform slew rate regardless of the number of input signals that are in high logic state. The pull-down circuit may include a first plurality of transistor circuits each coupled to a corresponding one of the plurality of input signals, and a second plurality of transistor circuits each comprising a plurality of transistors coupled in parallel with each other and coupled to a corresponding one of the plurality of input signals or a complement of a corresponding one of the plurality of input signals. The first and second plurality of transistor circuits may each include an n-channel MOS (NMOS) transistor. The NOR gate may be incorporated into a decoder of a synchronous or asynchronous input path circuit to generally reduce the set-up and hold time window of the input path circuit.

Abstract: The first store unit (R1) for receiving and storing the first input (AI), the second store unit (R2) for receiving and storing the second input (BI), a selection unit (SEL) for selecting one of outputs from the first inverter (IV1) and the second inverter (IV2) in the second store unit (R2) in response to an output of the first store unit (R1) are provided in an operation circuit. This constitution, which has a function of storing the first input (AI) and the second input (BI) and a function of performing an exclusive-OR operation between the first input (AI) and the second input (BI), allows reduction in circuit scale.

Abstract: A logic circuit for use as a selector having multiple inputs and high operation speed. The logic circuit includes a first FET having a first electrode connected to a first power supply, a second electrode connected to an output terminal and a third electrode connected to an intermediate control node, and a plurality of logic blocks parallelly connected between the second power supply and the output terminal. Each logic block includes second and third FETs being of a conductivity type opposite to that of the first FET and connected in series between the output terminal and a second power supply. Each logic block also includes a fourth FET being of the same conductivity type as the second and third FETs and having a third electrode connected to the third electrode of the second FET, a first electrode connected to the third electrode of the third FET and a second electrode connected to the intermediate control node.

Abstract: The integrated circuit includes an input path circuit with an address path having an input buffer for providing address signals to a register. A separate clock path having an input buffer provides a clock signal for clocking the register. The input buffers of both the address path and the clock path include input buffer cells configured to reduce timing delay differences caused by process variations while minimizing current leakage. An exemplary input buffer cell described herein includes a first inverter stage with a pair of NMOS devices connected in series with a PMOS device and a second inverter stage having an additional PMOS device connected along a feedback path around an inverter. The PMOS device along the feedback path operates to assist the pair of NMOS devices to pull a voltage input to the inverter to a high logic state, when an input to the cell is held low, to prevent leakage current through the inverter.