Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with staggered body contacts and methods of manufacture. The device includes: a gate structure on a semiconductor substrate material, the gate structure comprising a gate body with a width and a length; a plurality of body contacts electrically contacting a channel region under the gate body on at least one side of the gate body along its width; and isolation structures isolating the plurality of body contacts from a source region and a drain region associated with the gate structure.

Abstract: The present disclosure provides a method of analyzing a semiconductor device. The method includes providing a first transistor, a second transistor disposed adjacent to the first transistor, and a gate electrode common to the first transistor and the second transistor; connecting a power-supply voltage (Vdd) to the gate electrode to turn on the first transistor, determining a first threshold voltage (Vth) based on the power-supply voltage; switching the power-supply voltage to a ground voltage (Vss); connecting the ground voltage to the gate electrode to turn on the second transistor; and determining a second threshold voltage based on the ground voltage.

Abstract: One example of the present disclosure is an integrated circuit (IC). The IC includes an inverter with an input and an output, a clock transmission gate coupled to the output of the inverter; and a plurality of storage cells. The clock transmission gate is coupled to each of the plurality of storage cells, wherein each of the plurality of storage cells comprises a plurality of nodes arranged based on a minimum spacing.

Abstract: An embodiment includes a tie-off circuit includes multiple field effect transistors (FETs), and a node isolation circuit that is connected to a first output node and a second output node of the tie-off circuit. The node isolation circuit consists of a first FET with a third output node and a second FET with a fourth output node. The second output node includes a logical LO node and is coupled to a gate of the first FET and generates a TIE HI output.

Abstract: A semiconductor structure can include a substrate and a substrate layer. The substrate can be formed of silicon and the substrate layer can be formed of silicon germanium. Above the substrate and under the substrate layer there can be provided a multilayer substructure. The multilayer substructure can include a first layer and a second layer. The first layer can be formed of a first material and the second layer can be formed of second material. A method can include forming a multilayer substructure on a substrate, annealing the multilayer substructure, and forming a substrate layer on the multilayer substructure.

Abstract: A standard cell used for the logic synthesis and the routing of layout is configured by a logic circuit on an output side and a logic circuit on an input side, and a driving capacity of the logic circuit on the output side is made large while gate input capacitance of the logic circuit on the input side is made small.

Abstract: The invention relates to a a circuit including a transistor of a first type of channel in series with a transistor of a second type of channel between first and second terminals for applying a power supply potential, each of the transistors being a multiple gate transistor having at least a first (G1P, G1N) and a second (G2P, G2N) independent control gates, characterized in that at least one of the transistors is configured for operating in a depletion mode under the action of a second gate signal applied to its second control gate (G2p, G2N).

Abstract: Disclosed herein is a logic circuit that includes a transistor T1 coupled between VPERI and a node n1, a transistor T2 coupled between VPERI and a node n2, a transistor T3 coupled between VSS and a node n3, a transistor T4 coupled between VSS and a node n4, transistors T5 and T7 coupled in series between the nodes n1 and n3, transistors T9 and T11 coupled in series between the nodes n1 and n3, transistors T6 and T8 coupled in series between the nodes n2 and n4, and transistors T10 and T12 coupled in series between the nodes n2 and n4. An output signal Y is output from a connection point of the transistors T5 and T7 and a connection point of the transistors T6 and T8.

Abstract: An inverter cell for a ring oscillator. The inverter cell includes a first transistor, a second transistor, a first resistor, a second resistor, and a capacitor. A voltage input terminal is connected to gates of the first transistor and the second transistor. A voltage output terminal is connected drains of the first transistor and the second transistor. The first resistor is connected to the source of the first transistor and a first voltage potential. The second resistor is connected to the source of the second transistor and a second voltage potential. The capacitor has a first end directly connected to the source of the first transistor and the first end of the first resistor and a second end directly connected to the source of the second transistor and the first end of the second resistor.

Abstract: Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Abstract: This invention relates to Multiple Interlocked Cells (MICE) design as a hardening technique for CMOS logic gates consisting of two or more redundant nodes with node isolation components. This technique is used to modify existing standard CMOS logic gates or create new complex logic gates using common mask layers existing at ultra-deep sub-micron CMOS foundries. For single node upset immunity in logic or register, a primary cell and a redundant cell are used. For multi-node immunity, the primary cell is combined with two or more redundant nodes are used with physical layout spacing techniques which will insure that a single particle track cannot upset all three nodes simultaneously, and logic circuits built using this technique are immune to upsets in any environment. Circuits built using the MICE technique are also immune to single event transients without requiring the large time delays used in other hardening techniques.

Abstract: A complementary metal oxide semiconductor (CMOS) circuit is described. The CMOS circuit includes a plurality of CMOS gates, a plurality of logic inputs and a logic output. Each CMOS gate is connected to a negative power supply terminal (Vss) and a positive power supply terminal (Vdd). The CMOS circuit further includes parasitic nets connected to the CMOS gates, and net pulldown circuits for eliminating a charge accumulation on the parasitic nets while avoiding potential short circuit conditions. The CMOS gates may be OR-AND-INVERT (OAI) gates or AND-OR-INVERT (AOI) gates.

Abstract: A semiconductor device includes a first transistor included in a latch circuit, a second transistor that is included in the latch circuit and is formed in a well in which the first transistor is formed, the second transistor having a conduction type identical to that of the first transistor, and a well contact that is provided between the first transistor and the second transistor and connects a power supply to the well.

Abstract: An ultra-low-power transconductance device is provided, (FIG. 1b, FIG. 1c), comprising a series connection of a transistor of a first channel type (A) and a transistor of a second channel type (B), the first channel type having a different polarity than the second channel type. The transistors each have a source, a drain and a gate. The source of the transistor of the first channel type (A) is coupled with the source of the transistor of the second channel type (B) and the drain of the transistor of the first channel type (A) is coupled with the gate of the transistor of the second channel type (B).

Abstract: A field-effect transistor is provided and includes source, gate and drain regions, where the gate region controls charge carrier location in the transport channel, the transport channel includes a asymmetric coupled quantum well layer, the asymmetric quantum well layer includes at least two quantum wells separated by a barrier layer having a greater energy gap than the wells, the transport channel is connected to the source region at one end, and the drain regions at the other, the drain regions include at least two contacts electrically isolated from each other, the contacts are connected to at least one quantum well. The drain may include two regions that are configured to form the asymmetric coupled well transport channel. In an embodiment, two sources and two drains are also envisioned.

Abstract: A standard cell used for the logic synthesis and the routing of layout is configured by a logic circuit on an output side and a logic circuit on an input side, and a driving capacity of the logic circuit on the output side is made large while gate input capacitance of the logic circuit on the input side is made small.

Abstract: This invention relates to Multiple Interlocked Cells (MICE) design as a hardening technique for CMOS logic gates consisting of two or more redundant nodes with node isolation components. This technique is used to modify existing standard CMOS logic gates or create new complex logic gates using common mask layers existing at ultra-deep sub-micron CMOS foundries. For single node upset immunity in logic or register, a primary cell and a redundant cell are used. For multi-node immunity, the primary cell is combined with two or more redundant nodes are used with physical layout spacing techniques which will insure that a single particle track cannot upset all three nodes simultaneously, and logic circuits built using this technique are immune to upsets in any environment. Circuits built using the MICE technique are also immune to single event transients without requiring the large time delays used in other hardening techniques.

Abstract: A semiconductor device includes a first transistor included in a latch circuit, a second transistor that is included in the latch circuit and is formed in a well in which the first transistor is formed, the second transistor having a conduction type identical to that of the first transistor, and a well contact that is provided between the first transistor and the second transistor and connects a power supply to the well.

Abstract: A quadrature output high-frequency RF divide-by-two circuit includes a pair of differential complementary logic latches. The latches are interconnected to form a toggle flip-flop. Each latch includes a tracking cell and a locking cell. In a first embodiment, the locking cell includes two complementary logic inverters and two transmission gates. When the locking cell is locked, the two gates are enabled such that the locked (i.e., latched) signal passes through both transmission gates and both inverters. In one advantageous aspect, the tracking cell only involves two transmission gates. Due to the circuit topology, the first embodiment is operable from a low supply voltage at a high operating frequency while consuming a low amount of supply current. In a second and third embodiment, the tracking cell involves a pair of inverters. The sources of the transistors of the inverters are, however, coupled together thereby resulting in performance advantages over conventional circuits.

Abstract: A layout circuit is provided, comprising standard cells, a spare cell, combined tie cells and normal filler cells. The standard cells are disposed and routed on a layout area. The spare cell is added on the layout area and provided for replacing one of the standard cells while adding or changing functions later. The combined tie cells are added on the layout area. The normal filler cells are added on the rest of the layout area. The combined tie cell comprises a tie-high circuit, a tie-low circuit and a capacitance circuit. Some standard cells are disposed near at least one combined tie cell for avoiding routing congestion between the combined tie cells and the replaced standard cell. A circuit layout method is also provided.

Abstract: Devices and methods are disclosed for logic gate devices to provide reduced leakage while improving performance. The device is configured for low leakage logic application where high threshold voltage devices are used to reduce leakage at the expense of reduced logic speed. Better performance is achieved than a high threshold voltage stack.

Abstract: It is disclosed a combinatorial logic circuit comprising a first logic block (B1) coupled to a supply terminal (VDD) via a first resistor means (RI) and via a second resistor means (R2) for receiving respective first and second supply currents (111, 112). The circuit further comprises a second logic block (B2) coupled to the supply terminal (VDD) via the first resistor means (R1) and via the second resistor means (R2) for receiving respective third and fourth supply currents (122, 121). A first output terminal (Q?) coupled to the first block (B1) and to the first resistor means (R1). A second output terminal (Q+) coupled to the second logic block (B2) and to the second resistor means (R2). A first current source (I0) coupled to at least one of the first output terminal (Q?) and/or second output terminal (Q+) for providing a first supply current (I1) through the first resistor means (R1), which is substantially equal to a second supply current (I2) through the second resistor means (R2).

Abstract: A logical building block and method of using the building block to design a logic cell library for CMOS (Complementary Metal Oxide Silicon) ASICs (Application Specific Integrated Circuits) is disclosed. Different logic gates, built with the same building block as described in this invention, will have the same schematics of transistor connection and also the same physical layout so that they appear to be physically identical under optical or electron microscopy. An ASIC designed from a library of such logic cells is strongly resistant to a reverse engineering attempt.

Abstract: A method and apparatus of providing a programmable system using non-volatile programmable transistors are disclosed. A programmable logic circuit, in one embodiment, includes a first programmable transistor and a second programmable transistor. The first programmable transistor includes a first gate terminal, a first source terminal, a first drain terminal, and a first programming terminal. The second programmable transistor includes a second gate terminal, a second source terminal, and a second drain terminal, and a second programmable terminal. The first and second programmable transistors include non-volatile memory elements. The first and the second gate terminals are coupled to an input terminal, and the first drain terminal and the second source terminal are coupled to an output terminal to perform a logic function.

Abstract: A circuit for a multiplexer includes a pair of NAND gates with outputs coupled to an OAI gate constructed from a complementary circuit formed from solid state devices. A current flow controller formed from solid state devices is coupled to one of the NAND gates. When activated the controller inhibits the flow of current through the NAND gate and a portion of the OAI gate to which the controller is connected. As a consequence, leakage power is not consumed within the multiplexer. Several of the applications in which the circuit is used are also demonstrated in the specification.

Abstract: A novel methodology for the construction and operation of logical circuits and gates that make use of and contact to a fourth terminal (substrates/bodies) of MOSFET devices is described in detail. The novel construction and operation provides for maintaining such body-contacted MOSFET devices at a lower threshold voltage (VTh) when actively on (to increase overdrive and performance), and at a higher relative threshold voltage when off (to reduce leakage power). Because the threshold potential of a gate moves inversely to its body potential, it follows then that in general, the body of a given device must be tied to the inverse of the device's drain voltage to achieve such a desirable threshold potential modulation effect for improved device, circuit, gate and logical family operation.

Abstract: A novel methodology for the construction and operation of logical circuits and gates that make use of and contact to a fourth terminal (substrates/bodies) of MOSFET devices is described in detail. The novel construction and operation provides for maintaining such body-contacted MOSFET devices at a lower threshold voltage (VTh) when actively on (to increase overdrive and performance), and at a higher relative threshold voltage when off (to reduce leakage power). Because the threshold potential of a gate moves inversely to its body potential, it follows then that in general, the body of a given device must be tied to the inverse of the device's drain voltage to achieve such a desirable threshold potential modulation effect for improved device, circuit, gate and logical family operation.

Abstract: A logic gate comprises a first switch, a second switch, a data network and a keeping circuitry. The first switch is adapted to connect a logic node to a first potential responsive to a transition of an enabling signal. The second switch is adapted to connect the logic node to a second potential via an electrical path responsive to a transition of the enabling signal. The data network is serially connected within the electrical path. The keeping circuitry comprises third and fourth switches serially connected between the logic node and the first potential and being controllable separately from each other, the third switch being adapted to be closed in case a potential on the logic node assumes the first potential and to be opened in case the potential on the logic node assumes the second potential.

Abstract: Techniques for employing multi-gate field effect transistors (FETS) in logic circuits formed from logic gates are provided. Double-gate transistors that conduct only when both transistor gates are active can be used to reduce the number of devices hitherto required in series or “stacked” portions of logic gates. Circuit area can be reduced and performance can be enhanced.

Abstract: A balanced input inverter circuit includes a first P-type MOS transistor including a gate terminal connected to an input, a source terminal connected to a first power source potential, and a drain terminal connected to an output, a first N-type MOS transistor including a gate terminal connected to the input, a drain terminal connected to the output, and a source terminal connected to a second power source potential, a first inverter circuit including an input terminal connected to an inverted input, and an output terminal connected to a back gate terminal of the first N-type MOS transistor, a first diode connected between the first power source potential and a first power source terminal of the first inverter circuit, a second inverter circuit including an input terminal connected to the inverted input, and an output terminal connected to a back gate terminal of the first P-type MOS transistor, and a second diode connected between the second power source potential and a second power source terminal of the sec

Abstract: An object of the present invention is to provide a technique of reducing the leakage current of a drive circuit for driving a circuit that must retain a potential (or information) when in its standby state. A semiconductor integrated circuit device of the present invention includes a drive circuit for driving a circuit block. This drive circuit is made up of a double gate transistor with gates having different gate oxide film thicknesses. When the circuit block is in its standby state, the gate of the double gate transistor having a thinner gate oxide film is turned off and that having a thicker gate oxide film is turned on. This arrangement allows a reduction in the leakage currents of both the circuit block and the drive circuit while allowing the drive circuit to deliver or cut off power to the circuit block.

Abstract: An inverting cell including a first inverter having first and second inputs; a second inverter having first and second inputs, wherein the second input of the second inverter is connected to the first input of the first inverter and the output of the first and second inverters is connected to the second input of the first inverter; and a third inverter connected between the output of the first and second inverters and the first input of the second inverter.

Abstract: A semiconductor integrated circuit apparatus and an electronic apparatus having a power control function configured from power control MOS transistors such that leakage current and on-resistance at the time of cut-off is sufficiently small in actual use. The semiconductor integrated circuit apparatus includes a CMOS logic circuit, a first pseudo power supply line connected to a high potential side power supply terminal of the CMOS logic circuit, a second pseudo power supply line connected to a low potential side power supply terminal of the CMOS logic circuit, and a power control NchMOS transistor connected across the second pseudo power supply line and a low potential side power supply line, with the substrate and gate of the power control NchMOS transistor being electrically connected. The gate and the substrate may also be connected via a current limiter utilizing a source follower of a depletion type NchMOS transistor.

Abstract: A stacked inverter delay chain. The stacked inverter delay chain includes a plurality of stacked inverter delay elements. A switch circuit is included and is coupled to the stacked inverter delay elements and configured to select at least one of the plurality of stacked inverter delay elements to create a delay signal path. The delay signal path has an amount of delay in accordance with a number of stacked inverter delay elements comprising the delay signal path. An input is coupled to a first stacked inverter delay element of the delay signal path to receive an input signal and an output is coupled to the switch circuit and is coupled to the delay signal path to receive a delayed version of the input signal after propagating through the delay signal path.

Abstract: A method for using an inverter with a pair of complementary junction field effect transistors (CJFET) with a small linewidth is provided. The method includes having an input capacitance for said CJFET inverter to be less than the corresponding input capacitance of a CMOS inverter of similar linewidth. The CJFET operates at a power supply with a lesser value than the voltage drop across a forward-biased diode having a reduced switching power as compared to said CMOS inverter and having a propagation delay for said CJFET inverter that is at least comparable to the corresponding delay of said CMOS inverter.

Abstract: Embodiments relate to a current mode logic circuit, which may include a first NMOS transistor whose drain may be coupled to a first load and whose gate may be coupled to an input terminal through which data may be inputted, a second NMOS transistor whose drain may be coupled to a second load and gate may be coupled to an input terminal through which a negative reference voltage may be applied, and a third NMOS transistor whose drain may be coupled to a source of each of the first and the second NMOS transistors and whose gate may be coupled to an input terminal through which a reference voltage may be applied. Bulk biases of the first, second, and third NMOS transistors may be independently adjusted to control at least one of a leakage current and an operation speed of the NMOS transistors.

Abstract: A complementary metal oxide semiconductor (CMOS) comparator circuit includes a plurality of p-type metal-oxide-semiconductor (PMOS) transistors receiving an input voltage signal, a plurality of n-type metal-oxide-semiconductor (NMOS) transistors operatively connected to the PMOS transistors and adapted to receive the input voltage signal, and an inverter adapted to invert the input voltage signal into an output voltage signal. An effective aspect ratio of the PMOS and NMOS transistors may be dependent on the level of the output voltage signal from the inverter. When a digital output of the inverter is “1”, the effective aspect ratio of the NMOS transistor is increased by turning on a second NMOS transistor, and a threshold voltage of the inverter is decreased.

Abstract: A circuit for a multiplexer includes a pair of NAND gates with outputs coupled to an OAI gate constructed from a complementary circuit formed from solid state devices. A current flow controller formed from solid state devices is coupled to one of the NAND gates. When activated the controller inhibits the flow of current through the NAND gate and a portion of the OAI gate to which the controller is connected. As a consequence, leakage power is not consumed within the multiplexer. Several of the applications in which the circuit is used are also demonstrated in the specification.

Abstract: A dynamic and differential CMOS logic style is disclosed in which a gate uses a fixed amount of energy per evaluation event. The gate switches its output at every event and loads a constant capacitance. The logic style is a Dynamic and Differential Logic (DDL) style. The DDL style logic typically has one charging event per clock cycle and the charging event does not depend on the input signals. The differential feature masks the in-put value because a precharged output nodes is discharged during the evaluation phase. The dynamic feature breaks the input sequence: the discharged node is charged during the subsequent precharge phase.

Abstract: A complementary logic circuit contains a first logic input, a second logic input, a first dedicated logic terminal, a second dedicated logic terminal, a first logic block, and a second logic block. The first logic block consists of a network of p-type transistors for implementing a predetermined logic function. The p-type transistor network has an outer diffusion connection, a first network gate connection, and an inner diffusion connection. The outer diffusion connection of the p-type transistor network is connected to the first dedicated logic terminal, and the first network gate connection of the p-type transistor network is connected to the first logic input. The second logic block consists of a network of n-type transistors which implements a logic function complementary to the logic function implemented by the first logic block. The n-type transistor network has an outer diffusion connection, a first network gate connection, and an inner diffusion connection.

Abstract: A stacked inverter delay chain. The stacked inverter delay chain includes a plurality of stacked inverter delay elements. A switch circuit is included and is coupled to the stacked inverter delay elements and configured to select at least one of the plurality of stacked inverter delay elements to create a delay signal path. The delay signal path has an amount of delay in accordance with a number of stacked inverter delay elements comprising the delay signal path. An input is coupled to a first stacked inverter delay element of the delay signal path to receive an input signal and an output is coupled to the switch circuit and is coupled to the delay signal path to receive a delayed version of the input signal after propagating through the delay signal path.

Abstract: A method and a circuit for producing a fail-safe output signal in case of an open circuit condition of an input pad of a digital circuit unit, comprising a first inverter stage providing a constant switch level; a second inverter stage providing a variable switch level that depends of the signal level of the input pad and comparing the constant switch level of the first inverter stage with the variable switch level of the second stage and providing an output signal at an output terminal thereof if the variable switch level of the second stage is greater than the constant switch level; and an additional circuit clement connected in series with the second inverter for decreasing the switch level of the second inverter stage.

Abstract: A semiconductor device having a plurality of cascaded IC's (14, 15, 16), wherein the matching impedance between a signal transmission path (12) connected to an external signal transmission path and an input-side or output-side IC (14, 16) is set at 50 ohms which is equal to the characteristics impedance of the external signal transmission path. The matching impedance between a internal signal transmission path (13) and an input-side or output-side IC or intermediate IC is set at 200 ohms which is higher than the 50 ohms. The semiconductor device reduces the current dissipation and can operate at a higher speed.

Abstract: A hierarchical memory structure having memory cells, and sense amplifiers and decoders coupled with the memory cells to form first tier memory module, and subsequent tiers being formed by having (n?1)-tier memory modules, which are coupled with (n)-tier sense amplifiers and (n)-tier decoders. Also provided are a single-ended sense amplifier having sample-and-hold reference, and a charge-share limited-swing-driver sense amplifier; an asynchronously-resettable decoder; a wordline decoder having row redundancy; a redundancy device having redundant memory cells operated by a redundancy controller; a diffusion replica delay circuit; a high-precision delay measurement circuit; and a data transfer bus circuit imposing a limited voltage swing on a data bus. Methods are provided for a write-after-read operation without an interposed precharge cycle, and write-after-write operation with an interposed precharge cycle are provided, either operation being completed in less than one memory access cycle.

Abstract: In order to provide a semiconductor device having a means for operating normally even when the amplitude of a signal voltage is smaller than the amplitude of a power source voltage, a correcting means is provided before a digital circuit to be operated normally. As for a signal outputted from the correcting means, when a transistor in the objective digital circuit is required to be turned OFF, the correcting means outputs a corresponding signal, namely a first power source potential. At this time, the transistor is turned OFF. On the other hand, when the transistor is required to be turned ON, the correcting means outputs a first input potential. Consequently, the objective digital circuit is turned OFF when it is required to be in an OFF state while turned ON when it is required to be in an ON state. Thereby, the objective digital circuit can be normally operated.

Abstract: Embodiments of the present invention perform logical operations utilizing a symmetric logic circuit comprising two logic units. In a symmetric logic circuit, the circuit configuration used to process a first logic input in the first logic unit is the same as the circuit configuration used to process a second logic input in the second logic unit, and the circuit configuration used to process the second logic input in the first logic unit is the same as the circuit configuration used to process the first logic input in the second logic unit.

Abstract: The present invention provides a fault-tolerant inverter circuit, comprising a signal input point for receiving the input signals. A first inverter, the input end of the first inverter connects to the signal input point. A second inverter, the input end of the second inverter connects to the output end of the first inverter. A third inverter, the input end of the third inverter connects to the output end of the second inverter. A signal output point, and it is used to connect the output end of the third inverter. A first conducting wire, the two ends of which connect respectively to the signal input point of the first inverter and the output end of the second inverter. A second conducting wire, the two ends of which connect respectively to the outputting end of the first inverter and the signal output point. Therefore, the fault-tolerant inverter of the present invention provides fault-tolerance when an opening occurs in any conducting wire or transistor.

Abstract: A semiconductor integrated circuit device comprises a plurality of MIS transistors, and an integrated circuit unit including logic gate circuits configured by a combination of the plurality of MIS transistors. Each of the MIS transistors has a gate including a circuit element represented by an equivalent circuit in which a capacitance and resistance are parallel-connected.

Abstract: An inverter circuit includes an input end receiving an input signal having a low level and a high level, wherein the low level is greater than zero, a P-channel metal-oxide-semiconductor (PMOS) transistor having a gate electrode coupled to the input end and a source electrode coupled to a voltage source, a first N-channel metal-oxide-semiconductor (NMOS) transistor having a drain electrode coupled to a drain electrode of the PMOS transistor to serve as an output end, and a source electrode thereof coupled to ground, and a voltage drop device coupled to the gate electrode of the first NMOS transistor and the input end to provide a voltage drop from the input end to the gate electrode of the first NMOS transistor, thereby eliminating a current leakage of the first NMOS transistor at the low level of the input signal.

Abstract: An improved high-speed domino logic circuit uses two delayed clock signals, CLKD and CLKDBAR, and three transistors to introduce a transition delay time. According to the invention, the delayed clock signals are used in conjunction with the three added transistors to avoid the contest or “fight” between a first node and the keeper transistor in the event of a path to ground being created through the logic block portion of improved high-speed domino logic circuit. The improved high-speed domino logic circuits of the invention, in contrast to prior art domino logic circuits, can be designed to have high noise immunity and increased speed. In addition, since according to the invention, only three new transistors are required, the modification of the invention is space efficient and readily incorporated into existing designs.