Abstract: A delay circuit and a delay structure are provided. The circuit includes: a first delay unit configured to delay a rising edge and/or a falling edge of a pulse signal, where, an input terminal of the first delay unit receives the pulse signal, and an output terminal of the first delay unit outputs a first delay signal, and a second delay unit, configured to delay the first delay signal, where an input terminal of the second delay unit is connected to the output terminal of the first delay unit, and an output terminal of the second delay unit outputs a second delay signal.

Abstract: Portage storage containers including controlled evaporative cooling systems are described herein. In some embodiments, a portable container including an integral controlled evaporative cooling system includes: a storage region, an evaporative region adjacent to the storage region, a desiccant region adjacent to the outside of the container, and an insulation region positioned between the evaporative region and the desiccant region. A vapor conduit with an attached vapor control unit has a first end within the evaporative region and a second end within the desiccant region. In some embodiments, the controlled evaporative cooling systems are positioned in a radial configuration within the portable container.

Abstract: A programmable integrated circuit with lookup table circuitry is provided. The lookup table (LUT) circuitry may be formed using multiplexers. A multiplexer in the lookup table circuitry may be implemented using only tristate inverting circuits. Each tristate inverting circuit may include a first set of n-channel and p-channel transistors that receive a static control bit from a memory element and a second set of n-channel and p-channel transistors that receive true and complementary versions of a user signal. The first and second sets of transistors may be coupled in series between a positive power supply terminal and a ground power supply terminal. A LUT multiplexer implemented in this way need not include separate transmission gates at the output of each tristate inverting circuit and may exhibit minimal subthreshold leakage.

Abstract: Illustrative embodiments provide a field-programmable transistor array and a method of making an integrated circuit comprising a field-programmable transistor array. The field-programmable transistor array comprises a plurality of logic cells. Each of the plurality of logic cells comprises a plurality of columns of transistors. Each of the plurality of columns of transistors comprises a plurality of first transistors and a plurality of second transistors. Each of the plurality of first transistors are individually programmable to be either always on, always off, or to be controlled by a logic signal to be on or off. Each of the plurality of second transistors are configured to be programmed to be always on or always off.

Abstract: A method for allocation of a segmented interconnect in an integrate circuit is disclosed. The method comprises receiving a plurality of requests from a plurality of resource consumers of a plurality of engines to access a plurality of resources, wherein the resources are spread across the plurality of engines and contain data for supporting execution of multiple code sequences. The method also comprises contending for the plurality of resources in accordance with requests from the plurality of resource consumers. Finally, the method comprises accessing the plurality of resources via a global interconnect structure, wherein the global interconnect structure has a finite number of buses accessible each clock cycle, and wherein the global interconnect structure comprises a plurality of global segment buses.

Abstract: In some embodiments, the present disclosure relates to an integrated chip having a lower power rail continuously extending over a plurality of gate structures. A first set of connection pins straddle a first edge of the lower power rail, and a second set of connection pins straddle a second edge of the lower power rail, which is opposite the first edge. The first set of connection pins and the second set of connection pins are electrically coupled to the lower power rail. An upper power rail is over the lower power rail and is electrically coupled to the first set of connection pins and the second set of connection pins. The first set of connection pins are arranged at a first pitch and the second set of connection pins arranged with respect to the first set of connection pins at a second pitch less than the first pitch.

Abstract: A programmable integrated circuit with lookup table circuitry is provided. The lookup table (LUT) circuitry may be formed using multiplexers. A multiplexer in the lookup table circuitry may be implemented using only tristate inverting circuits. Each tristate inverting circuit may include a first set of n-channel and p-channel transistors that receive a static control bit from a memory element and a second set of n-channel and p-channel transistors that receive true and complementary versions of a user signal. The first and second sets of transistors may be coupled in series between a positive power supply terminal and a ground power supply terminal. A LUT multiplexer implemented in this way need not include separate transmission gates at the output of each tristate inverting circuit and may exhibit minimal subthreshold leakage.

Abstract: A multichip package that includes an interposer and integrated circuits mounted on the interposer is provided. The interposer may include interposer routing circuitry and programmable power gating circuitry. At least one of the on-interposer integrated circuits may include power gating control logic that controls the programmable power gating circuitry. Circuitry on the integrated circuit may receive power supply voltage signals from the programmable power gating circuitry via the interposer routing circuitry. The programmable power gating circuitry may be configured to support fine, intermediate, and/or coarse power gating granularities. The programmable power gating circuitry may be used to selectively power down certain portions of the integrated circuit and may be used to provide desired power supply voltage levels to different voltage islands on the integrated circuit.

Abstract: To provide a highly reliable and low-power-consumption semiconductor device functioning as a programmable logic device. A monitor circuit is provided to monitor a change in the potential of a configuration memory in which a transistor is turned off to hold charge and a potential corresponding to the charge is stored as configuration data. The reset of the configuration data is controlled in accordance with the potential change. With such a structure, the configuration memory can be reconfigured before the configuration data is lost, resulting in improved reliability of the semiconductor device. In addition, reconfiguration can be performed every time data is lost. Accordingly, power consumption can be reduced as compared with the structure where reconfiguration is performed periodically.

Abstract: Disclosed is a programmable logic device (PLD) which can undergo dynamic configuration at a high speed. The PLD includes a plurality of programmable logic elements (PLEs) and a switch for selecting electrical connection between the PLEs. The switch includes a plurality of circuit groups each of which includes first and second transistors. The second transistors of the circuit groups are electrically connected in parallel with one another. In each of the circuit groups, the electrical conduction between a source and a drain of the second transistor is determined based on configuration data held at a node between the gate of the second transistor and a drain of the first transistor, which allows the selection of the electrical connection and disconnection between the programmable logic elements by the selection of one of the circuit groups.

Abstract: A programmable logic device that includes a storage device having smaller area and lower power consumption is provided. The programmable logic device includes a logic block including a storage device. The storage device includes a plurality of groups each including at least a first switch, a transistor that is turned on or off in accordance with a signal including configuration data input to a gate of the transistor through the first switch, and a second switch controlling the electrical connection between a first wiring and a second wiring together with the transistor when the second switch is turned on or off in accordance with the potential of the first wiring. In the logic block, the relationship between the logic level of a signal input and the logic level of a signal output is determined in accordance with the potential of the second wiring.

Abstract: A programmable logic device that includes a storage device having smaller area and lower power consumption is provided. The programmable logic device includes a logic block including a storage device. The storage device includes a plurality of groups each including at least a first switch, a transistor that is turned on or off in accordance with a signal including configuration data input to a gate of the transistor through the first switch, and a second switch controlling the electrical connection between a first wiring and a second wiring together with the transistor when the second switch is turned on or off in accordance with the potential of the first wiring. In the logic block, the relationship between the logic level of a signal input and the logic level of a signal output is determined in accordance with the potential of the second wiring.

Abstract: A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor.

Abstract: It is an object to provide a semiconductor device in which power consumption can be reduced. It is another object to provide a highly reliable semiconductor device using a programming cell, such as a programmable logic device (PLD). In accordance with a change in a configuration of connections between basic blocks, power supply voltage furnishing to the basic blocks is changed. That is, when the structure of connections between the basic blocks is such that a basic block does not contribute to a circuit, the supply of the power supply voltage to this basic block is stopped. Further, the supply of the power supply voltage to the basic blocks is controlled using a programming cell formed using a field effect transistor whose channel formation region is formed using an oxide semiconductor, the field effect transistor having extremely low off-state current or extremely low leakage current.

Abstract: Providing for a field programmable gate array (FPGA) utilizing resistive random access memory (RRAM) technology is described herein. By way of example, the FPGA can comprise a switching block interconnect having parallel signal input lines crossed by perpendicular signal output lines. RRAM memory cells can be formed at respective intersections of the signal input lines and signal output lines. The RRAM memory cell can include a voltage divider comprising multiple programmable resistive elements arranged electrically in series across a VCC and VSS of the FPGA. A common node of the voltage divider drives a gate of a pass gate transistor configured to activate or deactivate the intersection. The disclosed RRAM memory can provide high transistor density, high logic utilization, fast programming speed, radiation immunity, fast power up and significant benefits for FPGA technology.

Abstract: A programmable analog device and an analog device that can retain data even when supply of a power supply potential is interrupted and consumes less power. In a semiconductor device, first to fourth transistors are used as switches in a unit cell including an analog element, and the output of the unit cell switches between a conducting state, a non-conducting state, and a conducting state through the analog element by controlling the potential of a first node where the first transistor and the second transistor are connected and the potential of a second node where the third transistor and the fourth transistor are connected.

Abstract: A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor.

Abstract: It is an object to provide a semiconductor device in which power consumption can be reduced. It is another object to provide a highly reliable semiconductor device using a programming cell, such as a programmable logic device (PLD). In accordance with a change in a configuration of connections between basic blocks, power supply voltage furnishing to the basic blocks is changed. That is, when the structure of connections between the basic blocks is such that a basic block does not contribute to a circuit, the supply of the power supply voltage to this basic block is stopped. Further, the supply of the power supply voltage to the basic blocks is controlled using a programming cell formed using a field effect transistor whose channel formation region is formed using an oxide semiconductor, the field effect transistor having extremely low off-state current or extremely low leakage current.

Abstract: One embodiment provides a programmable logic device in which a logic switch includes: a first memory having a first terminal connected to a first wire, a second terminal connected to a second wire, and a third terminal connected to a third wire; a second memory having a fourth terminal connected to the first wire, a fifth terminal connected to a fourth wire, and a sixth terminal connected to a fifth wire; and a pass transistor having a gate connected to the first terminal, and a source and a drain respectively connected to a sixth wire and a seventh wire. A source or drain of a first select gate transistor is connected the sixth wire, and a source or drain of a second select gate transistor is connected to the seventh wire.

Abstract: Techniques and circuitry are disclosed for implementing non-volatile storage that exploit bias temperature instability (BTI) effects of high-k/metal-gate n-type or p-type metal oxide semiconductor (NMOS or PMOS) transistors. A programmed bitcell of, for example, a memory or programmable logic circuit exhibits a threshold voltage shift resulting from an applied programming bias used to program bitcells. In some cases, applying a first programming bias causes the device to have a first state, and applying a second programming bias causes the device to have a second state that is different than the first state. Programmed bitcells can be erased by applying an opposite polarity stress, and re-programmed through multiple cycles. The bitcell configuration can be used in conjunction with column/row select circuitry and/or readout circuitry, in accordance with some embodiments.

Abstract: A programmable logic device has a configurable interconnection coupling logic blocks, where the configurable interconnection has a phase change element with an amorphous region having a variable size to determine the phase change element is open or short. This isolates the programming path from the logic path.

Abstract: A semiconductor device includes multiple transistors (70, 75, 80, 85), each of the transistors (70, 75, 80, 85) including a gate electrode (18) formed above a semiconductor substrate (30), source/drain regions (10, 12, 14, 16) formed on both sides of the gate electrode (18), and a charge storage layer (38) interposed between the gate electrode (18) and the semiconductor substrate (30). One of the source/drain regions (10, 12, 14, 16) of adjacent transistors (70, 75, 80, 85) is respectively connected in series, so the above-mentioned multiple transistors (70, 75, 80, 85) form a closed loop in the semiconductor device. Accordingly, it is possible to provide a semiconductor device (60) in which the circuit function of the logic circuit (64) can be reconfigured in a non-volatile manner, thereby enabling wide selectivity and excellent design facility in terms of the circuit design and making it possible to readily fabricate the logic circuit (64) and a non-volatile memory (62) on a single chip (60).

Abstract: A transistor arrangement includes a switch transistor and a sense transistor. The switch transistor includes a charge storing structure and a control structure. The sense transistor includes a charge storing structure, a control structure and a select structure. The charge storing structure of the switch transistor is electrically connected to the charge storing structure of the sense transistor. The sense transistor is configured such that the select structure and the control structure of the sense transistor may be electrically controlled independently from one another.

Abstract: Disclosed is a novel circuit able to generate any logic combination possible as a function of the input logic signals. The circuit is described as a 2 input logistic map circuit but may be expanded to 3 or more inputs as required. Further disclosed is a universal logic array with variable circuit topology. A metallization layer and/or a via interconnection between cells in the array elements produce a circuit topology that implements a Boolean function and/or chaotic function and/or a logic function. The novel circuit provides a circuit topology for secure applications with no obvious physical correspondence between control signal values and input to output mapping. Further disclosed is a network which has a power signature independent of input signal state and output transition. This provides a very useful circuit to protect data from decryption from power signature analysis in secure applications.

Abstract: Providing for a field programmable gate array (FPGA) utilizing resistive random access memory (RRAM) technology is described herein. By way of example, the FPGA can comprise a switching block interconnect having parallel signal input lines crossed by perpendicular signal output lines. RRAM memory cells can be formed at respective intersections of the signal input lines and signal output lines. The RRAM memory cell can include a voltage divider comprising multiple programmable resistive elements arranged electrically in series across a VCC and VSS of the FPGA. A common node of the voltage divider drives a gate of a pass gate transistor configured to activate or deactivate the intersection. The disclosed RRAM memory can provide high transistor density, high logic utilization, fast programming speed, radiation immunity, fast power up and significant benefits for FPGA technology.

Abstract: A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor.

Abstract: An object of the present invention is to provide a programmable logic device which has short start-up time after supply of power is stopped, is highly integrated, and operates with low power. In a programmable logic device including an input/output block, a plurality of logic blocks each including a logic element, and a wiring connecting the plurality of logic blocks, the logic element has a configuration memory for holding configuration data and a look-up table including a selection circuit. The configuration memory includes a plurality of memory elements each of which includes a transistor whose channel region is in an oxide semiconductor film and an arithmetic circuit provided between the transistor and the selection circuit. Configuration data is selectively changed and output by the selection circuit in accordance with an input signal.

Abstract: A switch apparatus of a Field Programmable Gate Array (FPGA) includes a pass transistor configured to switch and transfer an input signal to a logic cell according to a value of a configuration memory, and a voltage maintaining unit connected between the configuration memory and a gate of the pass transistor and configured to delay a drop of a gate voltage.

Abstract: A transistor arrangement includes a switch transistor and a sense transistor. The switch transistor includes a charge storing structure and a control structure. The sense transistor includes a charge storing structure, a control structure and a select structure. The charge storing structure of the switch transistor is electrically connected to the charge storing structure of the sense transistor. The sense transistor is configured such that the select structure and the control structure of the sense transistor may be electrically controlled independently from one another.

Abstract: It is an object to provide a semiconductor device in which power consumption can be reduced. It is another object to provide a highly reliable semiconductor device using a programming cell, such as a programmable logic device (PLD). In accordance with a change in a configuration of connections between basic blocks, power supply voltage furnishing to the basic blocks is changed. That is, when the structure of connections between the basic blocks is such that a basic block does not contribute to a circuit, the supply of the power supply voltage to this basic block is stopped. Further, the supply of the power supply voltage to the basic blocks is controlled using a programming cell formed using a field effect transistor whose channel formation region is formed using an oxide semiconductor, the field effect transistor having extremely low off-state current or extremely low leakage current.

Abstract: Disclosed is a novel circuit able to generate any logic combination possible as a function of the input logic signals. The circuit is described as a 2 input logistic map circuit but may be expanded to 3 or more inputs as required. Further disclosed is a universal logic array with variable circuit topology. A metallization layer and/or a via interconnection between cells in the array elements produce a circuit topology that implements a Boolean function and/or chaotic function and/or a logic function. The novel circuit provides a circuit topology for secure applications with no obvious physical correspondence between control signal values and input to output mapping. Further disclosed is a network which has a power signature independent of input signal state and output transition. This provides a very useful circuit to protect data from decryption from power signature analysis in secure applications.

Abstract: Embodiments disclosed herein generally relate to switches that utilize micro-electromechanical systems (MEMS). By replacing transistors in many devices with switches such as MEMS switches, the devices may be used for logic applications. MEMS switches may be used in devices such as FPGAs, NAND devices, nvSRAM devices, AMS chips and general memory logic devices. The benefit of utilizing MEMS devices in place of transistors is that the transistors utilize more space on the chip. Additionally, the MEMS devices can be formed in the BEOL without having any negative impacts on the FEOL or necessitating the use of additional layers within the chip.

Abstract: A PLA contains an input plane (10) including a plurality of data lines (103) and a plurality of product term lines (104) having voltage levels changed in accordance with signal input to the plurality of data lines; and an output plane (20) including a plurality of product term lines (204) having voltage levels changed in accordance with the change of the voltage levels of the plurality of product term lines of the input plane and a plurality of data lines (203) for outputting signals in accordance with the voltage levels of the plurality of product term lines. In this PLA, at least one of the data lines of at least one of the input plane and the output plane has data terminals (101) at both ends thereof.

Abstract: An e-fuse circuit, a method of programming the e-fuse circuit, and a design structure of the e-fuse circuit. The method includes in changing the threshold voltage of one selected field effect transistor of two field effect transistors connected to different storage nodes of the circuit so as to predispose the circuit place the storage nodes in predetermined and opposite states.

Abstract: Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The gate insulator includes oxide insulator nanolaminate layers with charge trapping in potential wells formed by different electron affinities of the insulator nanolaminate layers.

Abstract: A programmable logic device architecture having logic elements with dedicated hardware to configure the look up tables of the logic element to either perform logic functions or to operate as a register for pipelining or other purposes. The programmable logic device includes a general interconnect and a plurality of logic array blocks interconnected by the general interconnect. Each of the plurality of logic blocks further includes one or more logic elements. The logic elements each include a first look up table, a second look up table, and dedicated hardware within the logic element to configure the first look table and the second look up table as a register without having to use the general interconnect. In one embodiment, the dedicated hardware includes a plurality of dedicated interconnects within the logic element to configure the two look up tables as a pair of cross coupled muxes or latches when configured as a register.

Abstract: A packaged PLD solution includes a first die having a masked-Read Only Memory (ROM) that is programmed during its fabrication to store configuration data, and includes a second die having a PLD including a number of configurable resources collectively configured to implement a circuit design embodied by the configuration data. The first die is electrically connected to the second die, and both the first die and second die are stacked and encapsulated together to form the packaged PLD solution. The configuration data is programmed into the masked-ROM by a manufacturer of both the masked-ROM and the PLD.

Abstract: A method of employing memory cells of an integrated circuit is disclosed. The method comprises steps of storing configuration data in a plurality of memory cells of a memory of the integrated circuit; selecting unused memory cells of the memory of the integrated circuit for use as a scratchpad memory; providing access to the unused memory cells of the integrated circuit; and enabling use of the unused memory cell of the integrated circuit in a user mode as scratchpad memory. According to one embodiment of the invention, a plurality of input/output ports of the integrated circuit is coupled to a plurality of JTAG inputs coupled to the plurality of unused memory cells. A programmable logic device having memory cells for storing data, and a circuit employing a programmable logic device, are also disclosed.

Abstract: A capacitor circuit and method to reduce layout area, leakage current, and to improve yield is disclosed. The circuit includes an output terminal (100), a plurality of circuit elements (322, 326, 330), and a plurality of transistors (320, 324, 328). Each transistor has a control terminal (314, 316, 318) and a current path coupled between the output terminal and a respective circuit element of the plurality of circuit elements. A control circuit (300) has a plurality of output terminals (314, 316, 318). Each output terminal is coupled to the control terminal of a respective transistor of the plurality of transistors. The control circuit produces control signals at respective output terminals to selectively turn off at least one transistor and turn on at least other transistors of the plurality of transistors at a first time.

Abstract: A switching circuit can have a plurality of first signal lines of a programmable logic device, a plurality of second signal lines of the programmable logic device, and a plurality of switch elements. Each switch element can selectively couple one first signal line to a second signal line and include one or more switch junction field effect transistors (JFETs) having a first control gate separated from a second control gate by a channel region.

Abstract: Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The gate insulator includes oxide insulator nanolaminate layers with charge trapping in potential wells formed by different electron affinities of the insulator nanolaminate layers.

Abstract: A semiconductor device comprising a programming circuit that includes an active device on or in a substrate and a programmable electronic component on the substrate. The programmable electronic component includes at least one carbon nanotube having a segment with an adjusted diameter. The programmable electronic component has a value that depends upon the adjusted diameter. The programming circuit also includes interconnects that couple the active device to the programmable electronic component. The active device is configured to control a current transmitted to the programmable electronic component.

Abstract: A logic basic cell contains a first logic function block and a second logic function block for the logic combination of a first input signal and a second input signal in accordance with a predeterminable first or second logic subfunction, and a first logic transistor coupled to the first logic function block, having a gate terminal, at which a third input signal can be provided, and having a source/drain terminal at which the output signal can be provided. Furthermore, a second logic transistor coupled to the second logic function block is provided, having a gate terminal, at which a complementary signal with respect to the third input signal can be provided, and having a source/drain terminal, which is coupled to the source/drain terminal of the first logic transistor.

Abstract: A non-volatile memory cell comprises a first floating gate transistor having a source, a drain, and a gate electrically coupled to a row line. A second floating gate transistor has a source, a drain, and a gate electrically coupled to the row line. A first p-channel MOS transistor has a source, a drain, and a gate, the drain of the first p-channel MOS transistor electrically coupled to the drain of the first floating gate transistor forming a first common node. A second p-channel MOS transistor has a source, a drain, and a gate, the first drain of the second p-channel MOS transistor electrically coupled to the drain of the second floating gate transistor forming a second common node, the gate of the second p-channel MOS transistor electrically coupled to the first common node, and the second common node electrically coupled to the gate of the first p-channel MOS transistor.

Abstract: A programmable logic device including a plurality of logic elements organized in an array. Each of the logic elements includes an N-stage Look Up Table structure having 2N configuration bit inputs and a Look Up Table output. The first stage of the Look Up Table includes 2N tri-state buffers coupled to receive the 2N configuration bit inputs respectively. A decoder, configured from logic gates, is coupled to receive to one or more Look Up Table select signals and to generate a set of control signals to control the 2N tri-state buffers so that one or more of the 2N configuration bit inputs is selected by the first stage. The configuration bits are then provided to subsequent muxing stages in the Look Up Table.

Abstract: An integrated circuit such as a programmable logic device integrated circuit is provided that contains body-biased metal-oxide-semiconductor transistors and latch-up prevention circuitry to prevent latch-up from occurring in metal-oxide-semiconductor transistors. Body bias signals can be received from an external source or generated internally. Body bias paths are used to distribute the body bias signals to the body terminals of the metal-oxide-semiconductor transistors. The latch-up prevention circuitry may include active n-channel and p-channel metal-oxide-semiconductor transistor latch-up prevention circuitry. The latch-up prevention circuitry monitors the states of power supply signals to determine whether a potential latch-up condition is present.

Abstract: A latching circuit having a clock signal input and a data input, includes an inverting delay circuit having an input connected to DATA IN and having an output signal s1, a NAND circuit having a first input connected to signal s1, a second input connected to the clock signal, and an output signal s2, an OR circuit having a first input connected to the data input, a second input connected to s2, and an output signal s3, and a FLIP-FLOP circuit whose first input is connected to s2, whose second input connected to s3, and whose output is OUT Q.

Abstract: A method of operating a programmable logic device, including the steps of enabling resources of the programmable logic device being used in a circuit design implemented by the programmable logic device, and disabling unused or inactive resources of the programmable logic device that are not being used in the circuit design. The step of disabling can include de-coupling the unused or inactive resources from one or more power supply terminals. Alternatively, the step of disabling can include regulating a supply voltage applied to the unused or inactive resources. The step of disabling can be performed in response to configuration data bits stored by the programmable logic device and/or in response to user controlled signals. The step of disabling can be initiated during design time and/or run time of the programmable logic device.

Abstract: A structure that can be used, for example, to implement a lookup table for a programmable logic device (PLD). The structure includes configuration memory cells, pass transistors, and a buffer. The pass transistors pass the output of a selected configuration memory cell to the buffer, and are controlled by data input signals of the structure. The pass transistors have a first oxide thickness and are controlled by a value having a first operating voltage. The memory cells and buffer include transistors having a second oxide thickness thinner than the first oxide thickness, and operate at a second operating voltage lower than the first operating voltage. The data input signals are provided at the first operating voltage. Some embodiments include data generating circuits that include transistors having the first oxide thickness. Gate lengths can also vary between the memory cell transistors, pass transistors, buffer transistors, and data generating circuits.

Abstract: A cell that can be used as a dynamic memory cell for storing data or a field programmable gate array (FPGA) cell for programming is disclosed. The cell includes a capacitor having a first terminal connected to a column bitline and a second terminal connected to a switch control node. A select transistor has a gate connected to the read bitline, a source connected to the switch control node, and a drain connected to a row wordline. The switch control node stores data as a voltage indicative of a one or a zero.