Abstract: Circuits, methods, and systems for generating data outputs based on sampled data inputs. One circuit includes a first latch including a first logic gate, a second logic gate, and a first keeper subcircuit. The circuit further includes a second latch including a third logic gate, a fourth logic gate, and a second keeper subcircuit. The first keeper subcircuit being electrically coupled via a first shared node of the first latch and the second latch, and the second keeper subcircuit being electrically coupled via a second shared node of the first latch and the second latch.

Abstract: A flip-flop circuit includes master latch including a first inverter and a first tri-state inverter, wherein the first tri-state inverter includes a first NMOS transistor and a first PMOS transistor; a slave latch including a second inverter and a second tri-state inverter, wherein the second tri-state inverter includes a second PMOS transistor and a second NMOS transistor; and at least one of a first wiring configured to connect a source of the first PMOS transistor and a source of the first NMOS transistor and a second wiring configured to connect a source of the second PMOS transistor and a source of the second NMOS transistor.

Abstract: It is described a signal converter device (100) for converting a single-ended signal to a differential signal, the device (100) comprising: i) a multiplier device (110), configured to receive a single-ended incoming signal (105), and multiply the incoming signal (105) to provide a multiplied signal (115); and ii) a divider device (120), configured to receive the multiplied signal (115), and divide the multiplied signal (115) to provide a differential signal (125a, 125b). Further, a corresponding signal conversion method is described.

Abstract: A True Single-Phase Clock (TSPC) NAND-based reset flip-flop includes a reset functionality to perform a reset operation. The flip-flop with the reset functionality includes a master section and a slave section. The reset functionality is achieved using two transistors in the master section. The master section and the slave section operate using the TSPC. The master section and the slave section may include a plurality of NAND circuits and a NAND and NOR circuit for performing the reset operation. The master section outputs a plurality of internal signals on receiving a data input, a scan enable signal, a scan input signal, a reset control signal, and a clock signal. The slave section generates an output on receiving the plurality of internal signals received from the master section.

Abstract: This application relates to a synchronization circuit for synchronizing signals used in a threshold implementation operation process performing in an S-box of an encryption circuit. In one aspect, the synchronization circuit includes an enable signal generator configured to generate an enable signal. The synchronization circuit may also include a synchronization unit included in an encryption circuit and located inside an S-box that performs a threshold implementation operation that calculates by dividing bits of an input signal into bits equal to or greater than the number of bits of the input signal. The synchronization unit may be configured to synchronize signals used in a threshold implementation operation process based on the generated enable signal.

Abstract: An integrated circuit includes a first time delay circuit, a second time delay circuit, and a master-slave flip-flop having a gated input circuit and a transmission gate. The first time delay circuit has a first input configured to receive a first clock signal and having a first output configured to generate a second clock signal. The second time delay circuit has a second input configured to receive the second clock signal and having a second output configured to generate a third clock signal. The transmission gate is configured to receive the first clock signal and the second clock signal to control a transmission state of the transmission gate. The gated input circuit is configured to have an input transmission state controlled by the third clock signal at the second output of the second time delay circuit.

Abstract: A first clock signal is generated from a reference clock signal. A first frequency associated with the first clock signal is less than a reference clock frequency associated with the reference clock signal. The first clock signal is propagated towards a first component of an integrated circuit through a clock tree. A second clock signal having a second frequency is generated from the first clock signal at a terminal point of the clock tree. The second clock signal is provided to the first component.

Abstract: The disclosure is directed to a memory circuit, an electronic device, and a method of operating the memory circuit. According to an exemplary embodiment, the disclosure is directed to a memory circuit which includes not limited to a voltage equalizing circuit configured to equalize and pre-charge a first data line and a second data line to a reference voltage, a sense amplifier circuit configured to sense a binary data based on a relative voltage between the first data line and the second data line, a read-out latch circuit configured to receive the binary data which is to be transmitted to an external controller, and a write circuit configured to receive a first signal of the first data line and a second signal of the second data line so as to write the first signal to a first bit line and the second signal to a second bit line.

Abstract: A clock synthesis circuit and method provides for precision controlling and programming a selected number of clock pulses (or simply “clocks”) fitted within time periods between two consecutive pulses of a so-called system heartbeat (SHB) timing signal. The disclosed embodiments have applicability in light emitting diode (LED) display driver integrated circuits (ICs) and, more generally, digital circuits including computer processors, microcontrollers, logic devices such as field-programmable gate arrays (FP-GA), and other logic circuitry.

Abstract: A flip-flop is provided that includes an input latch, configured to receive a data signal and a complement and produce set and reset pulses based on a clock and a difference between the data signal and the complement; and an output latch, configured to store a data value in a first memory and a complement data value in a second memory based on the set and reset pulses and the clock. Various buffers configured to invert and amplify the set and reset pulses before provision to the output latch stages are optionally disposed between the input and output latches. The input latch includes two signal arms, two difference transistors (one gate controlled by the clock and the other by a clock complement) coupled oppositely to one another (by respective drains and sources) to the signal arms, and two regeneration inverters coupled oppositely to one another to the signal arms.

Abstract: The non-volatile semiconductor memory device comprises a non-volatile semiconductor memory, a controller for controlling the non-volatile semiconductor memory, the controller includes a reset terminal capable of receiving a reset signal from a host, an interface circuit capable of receiving a sleep command, and a data storing circuit, when the reset signal is received in a state which the interface circuit is being supplied with power, the data storing circuit is reset, when a sleep command is received in a state which the interface circuit is being supplied with power, the data necessary for communication with the host or the non-volatile semiconductor memory device is stored into the data storing circuit and power to the interface circuit is interrupted and when the reset signal is received in a state which power to the interface circuit is interrupted, the data is read from the data storing circuit.

Abstract: The present invention relates to a multi-level class D audio power amplifier for supplying an N-level drive signal to a loudspeaker. The multi-level class D audio power amplifier further comprises a switching matrix comprising a plurality of controllable semiconductor switches where the switching matrix comprising at least (N?2) switch inputs, coupled to respective ones of (N?2) DC input voltage nodes, and at least 2*(N?2) switch outputs coupled to respective ones of 2*(N?2) intermediate nodes of a first output driver. A control circuit is configured to sequentially connect each of the (N?2) DC input voltages to a predetermined set of nodes of the 2*(N?2) intermediate nodes of the first output driver via the switching matrix in accordance with one or more of the 2*(N?1) modulated control signals of the first output driver. N is a positive integer larger than or equal to 3.

Abstract: An apparatus has a control domain comprising functional circuitry to perform logical operations when in an operational state. The functional circuitry comprises at least one output and a state of the output depends on the logical operations. Domain control circuitry controls the control domain to put the functional circuitry in one of the operational state and a non-operational state. Isolation circuitry isolates the functional circuitry within the apparatus by holding the state of the output at a predetermined value when the domain control circuitry puts the functional circuitry in the non-operational state. Self-test control circuitry causes the domain control circuitry to control the control domain to put the functional circuitry in the non-operational state and to cause a self-test procedure to be carried out with respect to the functional circuitry.

Abstract: Methods and systems are described for receiving a signal to be sampled and responsively generating, at a pair of common nodes, a differential current representative of the received signal, receiving a plurality of sampling interval signals, each sampling interval signal received at a corresponding sampling phase of a plurality of sampling phases, for each sampling phase, pre-charging a corresponding pair of output nodes using a pre-charging FET pair receiving the sampling interval signal, forming a differential output voltage by discharging the corresponding pair of output nodes via a discharging FET pair connected to the pair of common nodes, the FET pair receiving the sampling interval signal and selectively enabling the differential current to discharge the corresponding pair of output nodes, and latching the differential output voltage.

Abstract: Provided is a semiconductor circuit which includes a first circuit configured to determine a voltage level of a feedback node based on a voltage level of input data, a voltage level of a latch input node, and a voltage level of a clock signal, a second circuit configured to pre-charge the latch input node based on the voltage level of the clock signal, a third circuit configured to pull down the latch input node based on the voltage level of the feedback node and the voltage level of the clock signal, a latch configured to output output data based on the voltage level of the clock signal and the voltage level of the latch input node, and a control circuit included in at least one of the first to third circuits and the latch and configured to receive the control signal.

Abstract: An electronic device includes clock generation circuitry. The clock generation circuitry includes a first flip flop receiving as input a device clock and being triggered by an input clock and a second flip flop receiving, as input, output from the first flip flop and being triggered by the input clock. A first inverter receives output from the first flip flop as input and a second inverter receives output from the second flip flop as input. A first AND gate receives, as input, output from the second flip flop and the first inverter, and generates a first clock as output. A second AND gate receives, as input, output from the first flip flop and the second inverter, and generates a second clock as output.

Abstract: We disclose frequency doublers for use in millimeter-wave devices. One such frequency doubler comprises at least one passive mixer comprising at least one of the following: at least one transistor configured to receive a back gate voltage; at least one first input driver circuit; and two second input driver circuits. We also disclose a method comprising determining a target output voltage of a frequency doubler comprising at least one passive mixer comprising at least one transistor configured to receive a back gate voltage; determining an output voltage of the frequency doubler; increasing a back gate voltage of the at least one transistor, in response to determining that the output voltage is below the target output voltage; and decreasing the back gate voltage of the at least one transistor, in response to determining that the output voltage is above the target output voltage.

Abstract: Adaptive pulse generation circuits for clocking pulse latches with minimum hold time are provided. In one aspect, an adaptive pulse generation circuit employs a dynamic XOR-based logic gate configured to provide a pulse generation signal based on an XOR-based function of data input and data output-based signals of a pulse latch. A pull-down keeper circuit is configured to pull the pulse generation signal to a ground voltage in response to the pulse generation signal being in an inactive state while the clock signal is in an active state. A logic circuit is configured to generate an adaptive pulse signal to clock a pulse latch in response to the pulse generation signal and the clock signal being in an active state. This configuration results in the pulse width of the adaptive pulse signal corresponding to the input-to-output delay of the pulse latch.

Abstract: The present invention proposes a driving circuit and a shift register. The driving circuit includes shift register circuits disposed in cascade. Each of shift register circuits includes a clock control transmittance circuit and a latch circuit. The clock control transmittance circuit is triggered by a first clock pulse. A driving pulse of a Q node at previous two stages is transmitted to the latch circuit and latched by the latch circuit. Further, the latch circuit is triggered by a second clock pulse, and then a gate driving pulse and a driving pulse of the Q node is output. So the present invention can be used in the CMOS process owing to the features of low consumption and wide noise margin.

Abstract: Embodiments of the present disclosure provide a shift register unit and a driving method thereof, a gate driving circuit and a display device. The shift register unit comprises a latch module and a latch output module. Switching on and off of the transmission gates is controlled by using an intermediate signal generated based on a clock signal and an inputted signal, instead of by using the clock signal, such that the shift register unit will not be influenced by frequent flips of the clock signal in a non-operational state, thus avoiding a great deal of useless power consumption.

Abstract: Provided is a non-volatile latch, which includes a latch circuit, a first switch circuit, a non-volatile memory device, a second switch circuit and a third switch circuit. A first terminal of the first switch circuit is coupled to a first output terminal of the latch circuit. The first switch circuit is turned off in a normal operation period. A first terminal of the non-volatile memory device is coupled to a second terminal of the first switch circuit. A second terminal of the non-volatile memory device is coupled to a programming voltage via the second switch circuit. In a store period, according to latched data of the latch circuit and a state transformation condition of the non-volatile memory device, the third switch circuit can dynamically determine whether to couple the first terminal of the non-volatile memory device to a reference voltage.

Abstract: Compact logic evaluation gates are built using null convention logic (NCL) circuits. The inputs to a null convention circuit include a NCL true input and a NCL complement input. The NCL circuit includes a gate coupled to the pair of inputs, where the gate comprises a plurality of transistors. The transistors allow for logical signal capture, provide a pair of cross-coupled inverters for data storage, and include a first and second pull-down device. The first pull-down device causes a first side of the pair of cross-coupled inverters to go to a “0” state when a “1” is applied to the NCL true input, and the second pull-down device causes a second side of the pair of cross-coupled inverters to go to a “0” state when a “1” is applied to the NCL complement input.

Abstract: A method for operating a latch and a latch circuit are disclosed. The latch circuit comprises a storage sub-circuit, a propagation sub-circuit, and a shared clock-enabled transistor. The storage sub-circuit is configured to capture a level of an input signal when a clock signal transitions from first level to a second level and hold the captured level to generate an output signal while the clock signal is at the second level. The propagation sub-circuit is configured to enable a path through a blocking transistor to the shared clock-enabled supply node to propagate the captured level of the input signal to the storage sub-circuit. The shared clock-enabled transistor is configured to couple the shared clock-enabled supply node to a power supply while the clock signal is at the first level and decouple the shared clock-enabled supply node from the power supply while the clock signal is at the second level.

Abstract: A gate drive circuit may include a latch circuit, a first transmission gate, and a second transmission gate. The first transmission gate and the second transmission gate may both be directly coupled to the latch circuit and may be directly coupled to a first gate line and a second gate line, respectively. The latch circuit may receive an electrical signal from a third gate line adjacent to the second gate line, such that the electrical signal is configured to reset a state of the latch circuit.

Abstract: A level shifter for converting a first voltage range to a second voltage range includes a latch circuit, a stack device and a dynamic bias circuit. The latch circuit is used for outputting the second voltage range. The stack device, coupled to the latch circuit, includes a stack transistor, which is used for sustaining the second voltage range of the latch circuit. The dynamic bias circuit, coupled to the stack device, is used for turning on the stack transistor to toggle the latch circuit.

Abstract: In an embodiment, an integrated circuit may include edge triggered flops that launch data to start a clock cycle and that capture data at the end of the clock cycle. Combinatorial logic circuitry may be coupled between the launching and capturing flops, and may be configured to operate on the launched data to generate result data for the capturing flops. One or more latches may be provided in the combinatorial logic circuitry, which may close and capture intermediate values responsive to an opposite edge of the clock than the edge that triggers the edge-triggered flops. In an embodiment, the clock to the latches may be gated with an enable. When the integrated circuit is not operating in the subthreshold voltage region, the enable may be in the disabled state. When operating in the subthreshold voltage region, the enable may be in the enabled state.

Abstract: In order to reduce power consumption, an arithmetic circuit having a function of performing a logic operation processing based on an input signal, storing a potential set in accordance with the result of the logic operation processing as stored data, and outputting a signal with a value corresponding to the stored data as an output signal. The arithmetic circuit includes an arithmetic portion performing the logic operation processing, a first field-effect transistor controlling whether a first potential, which is the potential corresponding to the result of the logic operation processing is set, and a second field-effect transistor controlling whether the potential of the output signal data is set at a second potential which is a reference potential.

Abstract: A flip-flop that includes a multiplexer configured to generate a multiplexer output. The multiplexer output is generated in response to an input and a scan enable, and is given to a transmission gate. A master latch is coupled to the transmission gate and to a tri-state inverter. The master latch is configured to receive an output of the transmission gate. A slave latch is configured to receive an output of the tri-state inverter and the multiplexer output. A data inverter is coupled to the slave latch. The data inverter is configured to generate a flip-flop output. A half clock gating inverter is configured to generate an inverted clock input in response to a clock input and the multiplexer output.

Abstract: In an embodiment of the invention, a dual-port positive level sensitive reset data retention latch contains a clocked inverter and a dual-port latch. Data is clocked through the clocked inverter when clock signal CKT goes high, CLKZ goes low, reset control signal REN is high and retention control signal RET is low. The dual-port latch is configured to receive the output of the clocked inverter, a second data bit D2, the clock signals CKT and CLN, the retain control signals RET, the reset control signal REN and the control signals SS and SSN. The signals CKT, CLKZ, RET, REN, SS and SSN determine whether the output of the clocked inverter or the second data bit D2 is latched in the dual-port latch. Control signal RET determines when data is stored in the dual-port latch during retention mode.

Abstract: A semiconductor device includes a first latch, a second latch and a transistor whose semiconductor layer contains an oxide semiconductor. An input of the first latch is electrically connected to one of a source and a drain of the transistor, an output of the first latch is electrically connected to an input of the second latch, and an output of the second latch is electrically connected to the other of the source or the drain of the transistor.

Abstract: A latch apparatus and applications thereof are provided. The latch apparatus consists of a latch circuit and a switchable DC block unit. The switchable DC block unit is coupled to the latch circuit, and configured to: isolate a cross-coupling path in the latch circuit and store a voltage difference before the latch apparatus performs the latching operation; and when the latch apparatus performs the latching operation, provide the stored voltage varying with time to increase the overdrive voltage of at least one transistor in the latch circuit (increase the transistor transconductance), so that the latch apparatus maintains high speed operation at low supply voltage.

Abstract: A latch circuit which can control a drain avalanche effect and improve reliability is provided. The latch circuit includes an input transistor importing a voltage corresponding to “0” or “1” when the scanning voltage is input to a gate, a storage capacitance storing a voltage imported by the input transistor, and having a first electrode and a second electrode, the first electrode is input with a capacitance control signal and the second electrode is connected to a second electrode of the input transistor, a first conduction type first transistor having a gate connected to the second electrode of the input transistor, a second electrode connected to a first output terminal, and a first electrode input with a first latch control signal, and a second conduction type second transistor having a gate connected to the second electrode of the first transistor, a second electrode connected to a second output terminal, and a first electrode input with a second latch control signal.

Abstract: One embodiment of the present invention sets forth a technique for capturing and holding a level of an input signal using a latch circuit that presents a low number of loads to the clock signal. The clock is only coupled to a bridging transistor and a pair of clock-activated pull-down or pull-up transistors. The level of the input signal is propagated to the output signal when the storage sub-circuit is not enabled. The storage sub-circuit is enabled by the bridging transistor and a propagation sub-circuit is activated and deactivated by the pair of clock-activated transistors.

Abstract: A flip-flop circuit may include a master latch and a slave latch. Each latch may have a transparent mode and a storage mode. The slave latch may be in storage mode when the master latch is in transparent mode; and vice-versa. A clock signal may control the mode of each latch through a pair of clock-gated pull-up transistors and a pair clock-gated of pull-down transistors, for a total of four clock-gated transistors. The clock-gated transistors may be shared by the master latch and the slave latch. Fewer clock-gated transistors may be required when they are shared, as opposed to not being shared. Clock-gated transistors may have parasitic capacitance and consume power when subjected to a varying clock signal, due to the charging and discharging of the parasitic capacitance. Having fewer clock-gated transistors thus may reduce the power consumed by the flip-flop circuit.

Abstract: Flip-flops in a monolithic three-dimensional (3D) integrated circuit (IC)(3DIC) and related method are disclosed. In one embodiment, a single clock source is provided for the 3DIC and distributed to elements within the 3DIC. Delay is provided to clock paths by selectively controllable flip-flops to help provide synchronous operation. In certain embodiments, 3D flip-flop are provided that include a master latch disposed in a first tier of a 3DIC. The master latch is configured to receive a flip-flop input and a clock input, the master latch configured to provide a master latch output. The 3D flip-flop also includes at least one slave latch disposed in at least one additional tier of the 3DIC, the at least one slave latch configured to provide a 3DIC flip-flop output. The 3D flip-flop also includes at least one monolithic intertier via (MIV) coupling the master latch output to an input of the slave latch.

Abstract: A storage cell having a pulse generator and a storage element is proposed. The storage element input is connected to receive a data input signal. The storage element output is connected to provide a data output signal. The storage element is operable in one of a data retention state and a data transfer state in response to a storage control signal received from the pulse generator. The pulse generator is connected to receive a clock signal with rising and falling clock signal edges and is adapted to provide control pulses in the storage control signal. Each control pulse has a leading edge and a trailing edge. The control pulses have a polarity suited to invoke the data transfer state on their leading edges. The novel feature is that the pulse generator is adapted to initiate a rising-edge control pulse when receiving a rising clock signal edge and to initiate a falling-edge control pulse when receiving a falling clock signal edge.

Abstract: A semiconductor storage device which stops and resumes the supply of power supply voltage without the necessity of saving and returning a data signal between a volatile storage device and a nonvolatile storage device is provided. In the nonvolatile semiconductor storage device, the volatile storage device and the nonvolatile storage device are provided without separation. Specifically, in the semiconductor storage device, data is held in a data holding portion connected to a transistor including a semiconductor layer containing an oxide semiconductor and a capacitor. The potential of the data held in the data holding portion is controlled by a data potential holding circuit and a data potential control circuit. The data potential holding circuit can output data without leaking electric charge, and the data potential control circuit can control the potential of the data held in the data holding portion without leaking electric charge by capacitive coupling through the capacitor.

Abstract: A sequential circuit arrangement and method are provided in which a latch input signal and a latched version of the input signal are compared to derive a difference signal. This difference signal can detect when changes in the input are not propagated to the output. A second logic gate arrangement derives an error signal from the product of difference signal and a delayed version of the difference signal. This means that normal operation of the circuit is not detected as an error—only when the latched output fails to follow the input after the normally expected delay is the error signal created. The latch element output or an inverted version of the latch element output is selected in dependence on the error signal.

Abstract: To reduce power consumption of a circuit (TEDC) which detects timing errors in a main flip-flop by determining whether or not output data signals of the main flip-flop and a shadow flip-flop correspond. The TEDC includes a power gating circuit (PGC) which performs power gating of the shadow FF and a reset circuit (RSTC) which resets an output signal of the shadow FF. The PGC makes the shadow FF in an active mode only when error detection needs to be performed; other than that, the PGC makes the shadow FF in a power saving mode. The RSTC supplies a certain voltage to an output terminal of the shadow FF in the power saving mode to suppress malfunction of the TEDC. A transistor using an oxide semiconductor is used to supply the voltage to the output terminal.

Abstract: A flip-flop circuit includes an input stage circuit, a middle stage circuit, an output stage circuit and a set/reset circuit. The input stage circuit is arranged for receiving a first signal from a first node, and selectively outputting a second signal at a second node according to at least one control signal. The middle stage circuit is coupled to the input stage circuit, and arranged for receiving the second signal, and selectively outputting a third signal at a third node according to the at least one control signal. The output stage circuit is coupled to the middle stage circuit, and arranged for receiving the third signal to output an output signal. The set/reset circuit is coupled to the second node and the third node, and arranged to receiving a set signal and a reset signal, and selectively determining a voltage level of the third signal at the third node.

Abstract: A high-speed low-power latch includes three sets of transistors. A first set of transistors selects a tracking mode or a holding mode for the latch based on a clock signal having non-rail-to-rail or rail-to-rail voltage swing. A second set of transistors captures a data value based on an input signal and provides an output signal during the tracking mode. A third set of transistors stores the data value and provides the output signal during the holding mode. The input and output signals have rail-to-rail voltage swing. In another aspect, a signal generator includes at least one latch and a control circuit. The latch(es) receive a clock signal and generate an output signal. The control circuit senses a duty cycle of a feedback signal derived from the output signal and generates a control signal to adjust operation of the latch(es) to obtain 50% duty cycle for the feedback signal.

Abstract: A flip-flop circuit has a master latch circuit and a slave latch circuit. In the flip-flop circuit, the master latch circuit and the slave latch circuit share at least a pair of transistors. In response to the clock signal, the signal held in the master latch circuit can be output at higher speed as the output signal via the intermediate node, the slave latch circuit and the output circuit. The flip-flop circuit can be reduced in cell size and improved in processing speed.

Abstract: In an embodiment of the invention, a dual-port positive level sensitive data retention latch contains a clocked inverter and a dual-port latch. Data is clocked through the clocked inverter when clock signal CKT goes high, CLKZ goes low and retention control signal RET is low. The dual-port latch is configured to receive the output of the clocked inverter, a second data bit D2, the clock signals CKT and CLN, the retain control signals RET and the control signals SS and SSN. The signals CKT, CLKZ, RET, SS and SSN determine whether the output of the clocked inverter or the second data bit D2 is latched in the dual-port latch. Control signal RET determines when data is stored in the dual-port latch during retention mode.

Abstract: A combination circuit generates first and second internal signals according to first and second input signals, respectively. A first master latch circuit selectively captures and holds a scan-in signal and the first internal signal, and generates a first output signal and a first intermediate signal based on the signals thus captured and held. A first slave latch circuit selectively captures and holds the first intermediate signal and the second internal signal, and generates a second output signal and a scan-out signal based on the signals thus captured and held. This arrangement reduces a circuit scale and power consumption of the input circuited provided in a semiconductor integrated circuit to which a scan path test method is applied.

Abstract: Data output circuits are provided. The data output circuit includes a latch control signal generator and a data output portion. The latch control signal generator generates an input pulse signal and a latch control signal i, and the latch control signal includes a pulse whose width is controlled to have a predetermined time period. The data output portion latches a data loaded on an input/output (I/O) line during a pulse width period of the latch control signal to generate a latch data. Moreover, the data output portion buffers the latch data according to an output control signal generated from a read command signal to output the buffered latch data as an output data.

Abstract: A latching circuit has an input for receiving the data value, an output for outputting a value indicative of the data value, a clock signal input for receiving a clock signal; and a pass gate. A feedback loop has two switching circuits arranged in parallel between two inverting devices, a first of the two switching circuits is configured to be off and not conduct in response to a control signal having a predetermined control value and a second of the two switching circuits is configured to be on and conduct in response to the control signal having the predetermined control value. A control signal controlling the two switching circuits is linked such that the switching devices switch their conduction status and the access control device act together to update the data value within the feedback loop.

Abstract: In a master-slave flip-flop, the master latch has first and second three-state stages, and a first feedback stage. The slave latch has third and fourth three-state stages, and a second feedback stage. First and second clock switches having opposite phases are provided. The first clock switch is configured in one of the first and fourth three-state stages, and the other stage shares the first clock switch. The second clock switch is configured in one of the second and third three-state stages, and the other stage shares the second clock switch. The second three-state stage has an additional pair of complementary devices having signal paths connected in series with each other with both being gated by a data output of the slave latch. The flip-flop reduces the number of clock switches and clock switch power consumption.

Abstract: A semi-dynamic flip-flop is provided. A selecting circuit selects an input signal from a data signal and a test signal. A charging/discharging circuit charges/discharges an intermediate node according to the input signal, a clock signal and a modulation signal. A first storage circuit stores electric potential of the intermediate node. An adjusting circuit generates an adjustment signal according to the clock signal and the potential of the intermediate node. An output signal adjusts electric potential of an output node according to the clock signal and the potential of the intermediate node. A second storage circuit stores the potential of the output node. A reset circuit sets or resets the potential of the output node. A switch, connected between the adjusting circuit and the charging/discharging circuit, is turned on when the semi-dynamic flip-flop is in a normal operation mode.

Abstract: According to one embodiment, a semiconductor integrated circuit includes a clock signal transmission path configured to transmit a clock signal and a data transmission path configured to transmit data. The clock signal transmission path has a first and a second clock signal transmission line configured to transmit a clock signal and a complementary clock signal. The data transmission path has a first and a second data transmission line configured to transmit data and complementary data. Each transmission path has an amplifier circuit of each signal and a level adjustment circuit for reducing amplitude of output from the amplifier circuit.

Abstract: According to one embodiment, a semiconductor integrated circuit includes a clock signal transmission path configured to transmit a clock signal and a data transmission path configured to transmit data. The clock signal transmission path has a first and a second clock signal transmission line configured to transmit a clock signal and a complementary clock signal. The data transmission path has a first and a second data transmission line configured to transmit data and complementary data. Each transmission path has an amplifier circuit of each signal and a level adjustment circuit for reducing amplitude of output from the amplifier circuit.