Abstract: An apparatus includes a control circuit configured to selectively activate, based on an operating mode signal, either a local clock signal or a pulse signal. The apparatus further includes a data storage circuit that is coupled to a data signal, the local clock signal, and the pulse signal. The data storage circuit may be configured to sample the data signal using the local clock signal during a first operating mode, and to sample the data signal using the pulse signal during a second operating mode.

Abstract: Methods and apparatus for sensing a memory cell using lower offset, higher speed sense amplifiers are described. A sense amplifier may include an amplifier component that is configurable to operate in an amplifier mode or a latch mode. In some examples, the amplifier component may be configured to operate in the amplifier or latch mode by activating or deactivating switching components inside the amplifier component. When configured to operate in the amplifier mode, the amplifier component may be used, during a read operation of a memory cell, to pre-charge a digit line and/or amplify a signal received from the memory cell. When configured to operate in the latch mode, the amplifier component may be used to latch a state of the memory cell. In some cases, the amplifier component may use some of the same internal circuitry for pre-charging the digit line, amplifying the signal, and/or latching the state.

Abstract: The present disclosure relates to integrated circuits, and more particularly, to a low clock load dynamic dual output latch circuit and methods of operation. The structure includes: a plurality of dynamic clocked stacks which are configured to receive input data and provide a true logical value and a complement logical value; and a plurality of holding stacks which are configured to provide a hold signal to the dynamic clocked stacks and output the true logical value and the complement logical value in response to the hold signal being activated.

Abstract: A scan driver includes stage circuits, each including: a first circuit including a control terminal (CT) connected to a first node (N1), and connecting/disconnecting a previous scan line of a previous stage circuit to a second node (N2) based on a control signal (CS); a second circuit including a CT connected to a clock signal line, and connecting one of a first power voltage line (FPVL) and a second power voltage line (SPVL) to the N1 based on a CS; a third circuit including a CT connected to the N2, and connecting one of the N1 and the SPVL to a third node (N3) based on a CS; a fourth circuit including a CT connected to the N3, and connecting one of the FPVL and the SPVL to a current scan line based on a CS; and a first capacitor connecting the CT of the third circuit and the SPVL.

Abstract: An apparatus includes a control circuit configured to selectively activate, based on an operating mode signal, either a local clock signal or a pulse signal. The apparatus further includes a data storage circuit that is coupled to a data signal, the local clock signal, and the pulse signal. The data storage circuit may be configured to sample the data signal using the local clock signal during a first operating mode, and to sample the data signal using the pulse signal during a second operating mode.

Abstract: A vector sum circuit and a phase controller including the vector sum circuit are provided. The vector sum circuit includes an amplifier configured to amplify an input orthogonal signal by using a first metal oxide semiconductor field effect transistor (MOSFET), and a self body-biasing circuit comprising a resistor. The self body-biasing circuit is configured to connect a drain and a body of the first MOSFET to reduce a voltage connected to the body as a current at the drain increases.

Abstract: An apparatus utilizing additive interleaved switchmode (PWM) power conversion stages, having minimal or no output filter, to achieve high bandwidth or even ideally instantaneous power conversion. The additive process may involve voltage stacking of isolated PWM converters, which are interleaved in time, or may involve a single input power supply and inductively combining output currents of PWM power converters interleaved in time, with either additive circuit having minimal or no output filtering. This circuit may overcome limitations for the frequency of feedback control loops once thought to be physical limitations, such as, fundamental switching frequency, output filter delay and the Nyquist criteria.

Abstract: A ringing suppression circuit is provided at a node having a communication circuit executing communication with another node by transmitting a differential signal through a pair of communication lines. The ringing suppression circuit includes: a suppressor configured to perform a suppression operation to suppress ringing occurred with a transmission of the differential signal by connecting a resistive component between the pair of communication lines; and a reference potential provider configured to provide a reference potential, which corresponds to a midpoint potential of the pair of communication lines during a steady state, to an intermediate point of the resistive component.

Abstract: The systems and methods described herein relate to electrical circuits. A system (e.g., inverter current system) is provided. The system includes plural inverters connected to a common bus and at least one capacitor. The inverters are configured to convert a direct current (DC) through the common bus to an alternating current (AC), by alternating different switches of the inverters between open and closed states in a respective switching cycle for each of the inverters. The system includes a controller circuit. The controller circuit is configured to adjust a current conducted onto the common bus to the inverters so that a root mean square of the current meets one or more designated criteria. The controller circuit controls the inverters to apply a frequency shift to the respective switching cycle of one or more of the inverters.

Abstract: A data output circuit includes: a first data latch unit enabled in response to a first bank selection signal including clock information, for storing first lower bank data and first upper bank data in response to a first input control signal, and outputting lower preliminary output data and upper preliminary output data in response to an output control signal; a second data latch unit enabled in response to a second bank selection signal including clock information, for storing second lower bank data and second upper bank data in response to a second input control signal, and outputting the lower preliminary output data and the upper preliminary output data in response to the output control signal; and a data output unit for driving the lower preliminary output data to send rising output data, and synchronizing the upper preliminary output data with the clock to send falling output data.

Abstract: A circuit suitable for data backup of a logic circuit is provided. The circuit includes first to fourth nodes, a capacitor, first to third transistors, and first and second circuits. Data can be loaded and stored between the circuit and the logic circuit. The first node is electrically connected to a data output terminal of the logic circuit. The second node is electrically connected to a data input terminal of the logic circuit. The capacitor is electrically connected to the third node. The first transistor controls electrical continuity between the first node and the third node. The second transistor controls electrical continuity between the second node and the third node. The third transistor controls electrical continuity between the second node and the fourth node. The first and second circuits have functions of raising gate voltage of the first transistor and raising gate voltage of the second transistor, respectively.

Abstract: A semiconductor device includes first and second transistors, a pair of first source/drain regions, a pair of second source/drain regions, and a cell. Each of the first source/drain regions corresponds to a first source/drain terminal of a respective one of the first and second transistors. Each of the second source/drain regions corresponds to a second source/drain terminal of a respective one of the first and second transistors. The cell includes a first voltage rail, a pair of second voltage rails, and a cell circuit. The first voltage rail is coupled to the first source/drain regions. Each of the second voltage rails is coupled to a respective one of the second source/drain regions and is configured to be coupled to the first voltage rail. The cell circuit is coupled to one of the second voltage rails.

Abstract: A decoder with reduced power consumption is provided. The decoder includes a first circuit and a second circuit for holding data. The second circuit includes a first transistor, a second transistor, and a third transistor. The first transistor and the second transistor include an oxide semiconductor in a channel formation region. The third transistor includes silicon in a channel formation region. A gate of the second transistor is electrically connected to one of a source and a drain of the first transistor and a gate of the third transistor is electrically connected to one of a source and a drain of the second transistor. The decoder is configured to provide or stop power supply to the semiconductor device depending on a packet ID of a header portion of the data and to perform data storing or restoring of data between the first circuit and the second circuit.

Abstract: A method includes: during a read operation of a first storage node and a second storage node formed by cross-coupled inverters, based on data stored in the first storage node and the second storage node, causing a first auxiliary branch or a second auxiliary branch to assist a corresponding one of the cross-coupled inverters in holding data; and during a write operation of the first storage node and the second storage node, based on data to be written to the first storage node and the second storage node, causing the first auxiliary branch or the second auxiliary branch to assist a corresponding one of the cross-coupled inverters in flipping data.

Abstract: A differential current sensing circuit architecture is used with an integrated circuit NVM memory block in which a selected memory cell and a related complementary memory cell are accessed at the same time for reading. The circuit architecture is used not only for normal operations for reading the logic states of a selected memory cell and its complementary memory cell after programming, but also for reading the logic states of a selected memory cell and its complementary memory cell before programming for the detecting of faults in memory cells.

Abstract: A latch circuit may be provided. The latch circuit may include a plurality of latches configured to store and output data through input/output signal lines according to input/output control signals. Latches coupled with input/output signal lines of same orders among the plurality of latches may be disposed by being distributed by orders of the input/output control signals. A plurality of pipe latches may be configured by latches which are inputted with input/output control signals of same orders, among the latches disposed by being distributed.

Abstract: To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode layer positioned over the first electrode layer and including a stacked-layer structure of a first conductive layer and a second conductive layer; and an oxide semiconductor film and an insulating film positioned between the first electrode layer and the second electrode layer in a thickness direction. The first conductive layer and the insulating film have a first opening portion in a region overlapping with the first electrode layer, The oxide semiconductor film has a second opening portion in a region overlapping with the first opening portion. The second conductive layer is in contact with the first electrode layer exposed in the first opening portion and the second opening portion.

Abstract: A clock gating circuit includes a first precharge unit charging a first node based on a clock signal, a second precharge unit charging a second node based on the clock signal, a first discharge unit discharging the first node based on the clock signal, a second discharge unit discharging the second node based on the clock signal, a first cross-coupled maintain unit maintaining the first node at a charge state according to a voltage level of the second node, a second cross-coupled maintain unit maintaining the second node at a charge state according to a voltage level of the first node, and a control unit controlling the first and second discharge units to discharge the first node or the second node on the basis of a clock enable signal.

Abstract: A flip-flop circuit may include a first latch and a second latch. The first latch, which may operate as a “master” latch, includes a first input terminal to receive a data signal, a second input terminal to receive a clock signal, and an output terminal. The second latch, which may operate as a “slave” latch, includes a first input terminal connected directly to the output terminal of the first latch, a second input terminal to receive the clock signal, and an output terminal to provide an output signal. The first latch and the second latch are to be clocked on the same phase of the clock signal, thereby eliminating the need to include clock inversion circuits that generate complementary clock signals.

Abstract: A semiconductor circuit includes a first circuit and a second circuit. The first circuit is configured to generate a voltage level at a first node based on a voltage level of input data, an inverted value of the voltage level at the first node, a voltage level of a clock signal, and a voltage level at a second node; and the second circuit is configured to generate the voltage level at the second node based on the voltage level of input data, an inverted value of the voltage level at the second node, the voltage level of the clock signal, and the inverted value of the voltage level at the first node. When the clock signal is at a first level, the first and second nodes have different logical levels. When the clock signal is at a second level, the first and second nodes have the same logical level.

Abstract: A high speed gain stage including regenerative feedback that forces one output high and one output low providing a two-state output. A differential pair of input transistors of a first conductivity type have respective current terminals coupled between a source node and first and second output nodes and have respective control terminals that receive the analog input voltages. A current source provides source current to the source node. The gain stage includes a differential pair of bias transistors of a second conductivity type having respective current terminals coupled between the first and second output nodes and a reference voltage and having respective control terminals coupled to a bias node. A pair of current-driven transistors of the second conductivity type are cross-coupled at the outputs and to a common node to provide the regenerative feedback. Another transistor is coupled between the common node and the reference voltage to increase switching speed.

Abstract: A driving circuit includes a first driver, a switching circuit and a second driver. The first driver receives and input signal and an inverted input signal, and generates a driving signal. The switching circuit receives the driving signal and a first mode signal. Moreover, an output signal is outputted from an output terminal. The second driver is connected with the output terminal.

Abstract: A polarity-switching amplifier circuit includes: a first amplifying transistor and a second amplifying transistor, a transformer which includes a primary winding and a secondary winding, and a polarity-switching controller. An unbalanced input signal is input to the first amplifying transistor and the second amplifying transistor. The transformer receives an output signal of the first amplifying transistor and an output signal of the second amplifying transistor as a balanced signal input to the primary winding, and outputs a signal from the secondary winding. The polarity-switching controller turns on one of the first amplifying transistor and the second amplifying transistor and turns off the other thereof.

Abstract: Embodiments of a latch circuit and a method of operating a latch circuit are described. In one embodiment, a latch circuit includes an input terminal configured to receive an input data signal, a switching unit configured to control application of the input data signal, a first inverter circuit connected to the switching unit, where the first inverter circuit includes a first cross-coupled pair of inverters, and a second inverter circuit connected to the first inverter circuit through the switching unit. The second inverter circuit includes a second cross-coupled pair of inverters and two transistor devices. Each inverter of the second cross-coupled pair of inverters is connected to a voltage rail through a corresponding transistor device. Each of the two transistor devices is connected to a node that is between the switching unit and the first inverter circuit or the second inverter circuit. Other embodiments are also described.

Abstract: A level shifter includes a latch having first and second branches, first and second outputs, first and second control switches in series between the respective branches and outputs, and a controller receiving first and second output signals and outputting first and second control signals to the first and second control switches for controlling activation thereof. In an initial state, the first output signal is in the first state, the first control switch is activated, the second output signal is in the second state, and the second control switch is deactivated. In a final state, the first output signal is in the second state, the first control switch is deactivated, the second output signal is in the first state, and the second control switch is activated. The controller changes the first and second control signals only after the first and second output signals reach the respective second and first states.

Abstract: In various embodiments, a driving circuit for a transistor is provided, wherein the transistor may include a transistor having a control terminal, a diode, a capacitance with a first terminal and a second terminal, wherein the first terminal may be coupled to the control terminal and the second terminal may be coupled to a reference potential via the diode, and a resistor, which is coupled in parallel to the capacitance.

Abstract: A method for designing a system on a target device using an electronic design automation (EDA) tool including identifying synchronizer chains in a system design using timing relationships. According to one embodiment of the present invention, the method includes conveniently reporting system reliability considering synchronization, and automatically protecting and optimizing synchronizer chains to improve system robustness.

Abstract: One aspect of the present invention includes a radio frequency (RF) receiver having a first mixer and a second mixer. The first mixer may be an I-mixer and the second mixer a Q-mixer for downconverting the received RF signal. An impedance circuit is disposed between the first mixer and the second mixer to decouple the channels. In another aspect of present invention, the RF receiver includes a digital filter having at least one complex coefficient. The digital filter exhibits asymmetrical frequency response, and may be used to compensate the asymmetrical frequency response of another filter in the RF receiver.

Abstract: A circuit includes a first inverter, a second inverter, a first auxiliary branch and a second auxiliary branch. The first and second inverters are cross-coupled to form a first storage node and a second storage node. The first auxiliary branch is coupled to the first storage node and configured to assist the first inverter in holding data based on data stored at the second storage node during a read operation, and assist the first inverter in flipping data based on data to be written to the first storage node during a write operation. The second auxiliary branch is coupled to the second storage node and configured to assist the second inverter in holding data based on data stored in the first storage node during the read operation, and assist the second inverter in flipping data based on data to be written to the second storage node during the write operation.

Abstract: Inventive aspects include an integrated clock gater (ICG) circuit having clocked complimentary voltage switched logic (CICG) that delivers high performance while maintaining low power consumption characteristics. The CICG circuit provides a small enable setup time and a small clock-to-enabled-clock delay. A significant reduction in clock power consumption is achieved in both enabled and disabled modes, but particularly in the disabled mode. Complimentary latches work in tandem to latch different voltage levels at different nodes depending on the voltage level of the received clock signal and whether or not an enable signal is asserted. An inverter takes the voltage level from one of the nodes, inverts it, and outputs a gated clock signal. The gated clock signal may be active or quiescent depending on the various voltage levels. Time is “borrowed” from an evaluation window and added to a setup time to provide greater tolerances for receiving the enable signal.

Abstract: Embodiments of the present invention provide a comparator and an analog-to-digital converter. A sampling module, a pre-amplifying module, and a coupling module in the comparator obtain a third differential voltage signal according to a positive input signal and a negative reference signal, and obtain a fourth differential voltage signal according to a negative input signal and a positive reference signal. A latch that is in the comparator and formed by a first P-type field effect transistor, a second P-type field effect transistor, a third field effect transistor, a fourth field effect transistor, a first switch, and a second switch is directly cross-coupled through gates, and directly collects the third differential voltage signal and the fourth differential voltage signal to the gates, so as to drive the latch to start positive feedback.

Abstract: A double edge triggered circuit includes a clock gater responsive to a clock signal and an enable signal to output a gated clock signal, a first double edge triggered flip-flop that launches a data signal in response to the gated clock signal, and a second double edge triggered flip-flop that captures the data signal in response to the clock signal, wherein the clock gater stops the gated clock signal at a first logic value when the enable signal is at a first logic state, and the clock gater switches the gated clock signal from the first logic value at a next clock edge when the enable signal is at a second logic state.

Abstract: A latch, an operation method of the latch, and a comparator using the latch are disclosed. The latch includes first and second cross-coupled pairs and first and second transistor pairs. First terminals of the first and second current paths of the first cross-coupled pair are respectively coupled to first terminals of the first and second transistors of the first transistor pair. First terminals of the third and fourth current paths of the second cross-coupled pair are respectively coupled to first terminals of the third and fourth transistors of the second transistor pair. Control terminals of the third and fourth transistors are respectively coupled to the first and second current paths. Control terminals of the first and second transistors are respectively coupled to the third and fourth current paths.

Abstract: To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion for holding data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, an inverter electrically connected to a source electrode or a drain electrode of the transistor is included. With the transistor, data held in the latch portion can be written into a gate capacitor of the inverter or a capacitor which is separately provided.

Abstract: According to one embodiment, a semiconductor integrated circuit includes a clock signal transmission path configured to transmit a clock signal and a data transmission path configured to transmit data. The clock signal transmission path has a first and a second clock signal transmission line configured to transmit a clock signal and a complementary clock signal. The data transmission path has a first and a second data transmission line configured to transmit data and complementary data. Each transmission path has an amplifier circuit of each signal and a level adjustment circuit for reducing amplitude of output from the amplifier circuit.

Abstract: An apparatus comprising a latch comprising a differential inverter configured to receive a differential input signal and generate a differential output signal, a pair of cross-coupled inverters coupled to the differential inverter, and a first clock switch configured to couple the differential inverter to a voltage source, a second clock switch configured to couple the differential inverter to a ground, wherein the first clock switch and the second clock switch are configured to receive a differential clock signal, and wherein the first clock switch and the second clock switch are both open or both closed depending on the differential clock signal.

Abstract: A logic signal transmission circuit includes a driving circuit, an isolation section, and a latch section. The driving circuit converts an input digital signal to a differential digital signal. The isolation section blocks direct current and passes the differential digital signal. The latch section has even numbers of inverters which are connected in a loop and output a logic signal by turning ON and OFF a power supply voltage in a complementary manner. An input impedance of the latch section is set so that when a logic level of the differential digital signal changes, a transient voltage inputted through the isolation section to the latch section changes across a threshold voltage of the latch section. When the transient voltage changes across the threshold voltage, a logic level of the logic signal changes.

Abstract: A dual flip-flop circuit combines two or more flip-flip sub-circuits into a single circuit. The flip-flop circuit comprises a first flip-flop sub-circuit and a second flip-flop sub-circuit. The first flip-flop sub-circuit comprises a first storage sub-circuit configured to store a first selected input signal and transfer the first selected input signal to a first output signal when a buffered clock signal transitions between two different logic levels and a dock driver configured to receive a clock input signal, generate an inverted clock signal, and generate the buffered clock signal. The second flip-flop sub-circuit is coupled to the clock driver and configured to receive the inverted clock signal and the buffered clock signal. The second flip-flop sub-circuit comprises a second storage sub-circuit configured to store a second selected input signal and transfer the second selected input signal to a second output signal when the buffered clock signal transitions.

Abstract: A circuit including a logic gate responsive to a clock signal and to a control signal. The circuit also includes a master stage of a flip-flop. The circuit further includes a slave stage of the flip-flop responsive to the master stage. The circuit further includes an inverter responsive to the logic gate and configured to output a delayed version of the clock signal. An output of the logic gate and the delayed version of the clock signal are provided to the master stage and to the slave stage of the flip-flop. The master stage is responsive to the control signal to control the slave stage.

Abstract: To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion for holding data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, an inverter electrically connected to a source electrode or a drain electrode of the transistor is included. With the transistor, data held in the latch portion can be written into a gate capacitor of the inverter or a capacitor which is separately provided.

Abstract: A latch includes a current source, an input amplifier, and a latch output circuit. The current source is configured to output a current based on a voltage source. The input amplifier is configured to receive a differential analog input signal including a first differential input and a second differential input and selectively provide the current based on the first differential input and the second differential input. A latch output circuit is configured to selectively output a differential digital output signal including a first differential output and a second differential output. The latch output circuit includes an over voltage protection circuit configured to receive the current output from the input amplifier, receive the voltage source limit, and output a modified differential digital output signal based on a comparison between a voltage corresponding to each of the first differential output and the second differential output and the voltage source limit.

Abstract: A current mode logic latch may include a sample stage and a hold stage, the hold stage comprising first and second stage transistors, first and second hold stage current sources, and a hold stage switch. The first hold stage transistor may be coupled at its drain terminal to the drain terminal of a first sample stage transistor. The second hold stage transistor may be coupled at its drain terminal to the drain terminal of a second sample stage transistor, coupled at its gate terminal to the drain terminal of the first hold stage transistor, and coupled at its drain terminal to a gate terminal of the first hold stage transistor. The first hold stage current source may be coupled to a source terminal of the first hold stage transistor. The second hold stage current source may be coupled to a source terminal of the second hold stage transistor. The hold stage switch may be coupled between the source terminal of the first hold stage transistor and the source terminal of the second hold stage transistor.

Abstract: An apparatus is provided. The apparatus includes a flip-flop including an input configured to receive a setup time and delay control (SDC) signal, and an output buffer including first and second conductive paths. The second conductive path is non-conductive when the SDC signal has a first value at the input and is conductive when the SDC signal has a second value at the input. The apparatus includes a propagation delay sensor configured to estimate a propagation delay of the flip-flop, and, when the estimated propagation delay exceeds a threshold, supply the SDC signal having the second value to the input of the flip-flop.

Abstract: A storage cell having a pulse generator and a storage element is proposed. The storage element input is connected to receive a data input signal. The storage element output is connected to provide a data output signal. The storage element is operable in one of a data retention state and a data transfer state in response to a storage control signal received from the pulse generator. The pulse generator is connected to receive a clock signal with rising and falling clock signal edges and is adapted to provide control pulses in the storage control signal. Each control pulse has a leading edge and a trailing edge. The control pulses have a polarity suited to invoke the data transfer state on their leading edges. The novel feature is that the pulse generator is adapted to initiate a rising-edge control pulse when receiving a rising clock signal edge and to initiate a falling-edge control pulse when receiving a falling clock signal edge.

Abstract: An object is to provide a semiconductor device which can suppress characteristic deterioration in each transistor without destabilizing operation. In a non-selection period, a transistor is turned on at regular intervals, so that a power supply potential is supplied to an output terminal of a shift register circuit. A power supply potential is supplied to the output terminal of the shift register circuit through the transistor. Since the transistor is not always on in a non-selection period, a shift of the threshold voltage of the transistor is suppressed. In addition, a power supply potential is supplied to the output terminal of the shift register circuit through the transistor at regular intervals. Therefore, the shift register circuit can suppress noise which is generated in the output terminal.

Abstract: A shifter that can avoid utilizing a partial pulse, comprising: at least one shifting stage, for receiving an external clock signal or a command triggering clock signal to generate sampling signals according a command signal; and a command triggering clock signal generating circuit, for generating the command triggering clock signal according to the command signal. The shifting stage utilizes the external clock signal to generate the sampling signal but does not utilize the command triggering clock signal to generate the sampling signal, if the command triggering clock signal may have a partial pulse for a cycle that the shifting stage generates the sampling signal.

Abstract: A control circuit 10 includes an internal clock generating portion (12), which starts generating an internal clock signal (LCLK) required by a control portion (11) to perform action when a specific signal pattern appears in a trigger signal, continually generates the internal clock signal (LCLK) at least before the control portion (11) completes predetermined processing, and then stops generating the internal clock signal (LCLK); and the control portion (11), which uses the internal clock signal (LCLK) to perform the predetermined processing.

Abstract: In a first embodiment of the present invention, a method for error-correcting in a parallel interconnect transmitting device is provided, the method comprising: detecting a frame transition in a transmission from the transmitting device to a parallel interconnect receiving device; tracking time between the frame transition and a transition of a response signal corresponding to the frame transition received from the receiving device; detecting an error in the transmission; and restarting a portion of the transmission in response to the error, wherein the size of the portion of the transmission to restart is based upon the tracked time between the frame transition and the transition of a response signal corresponding to the frame transition.

Abstract: An object of one embodiment of the present invention to provide a latch circuit includes a level shifter and a buffer in which transistors each including a channel region formed in an oxide semiconductor film are connected in series. Thus, data can be held in the latch circuit even when power is not supplied.

Abstract: One embodiment of the present invention sets forth a technique for capturing and holding a level of an input signal using a latch circuit that presents a low number of loads to the clock signal. The clock is only coupled to a bridging transistor and a pair of clock-activated pull-down or pull-up transistors. The level of the input signal is propagated to the output signal when the storage sub-circuit is not enabled. The storage sub-circuit is enabled by the bridging transistor and a propagation sub-circuit is activated and deactivated by the pair of clock-activated transistors.