Abstract: A method for controlling an electrical switch using a driver waveform, wherein the driver waveform comprises: a first time period, T1, associated with a first current, IG_high; a second time period, T2, associated with a second current, IG_low; wherein: the first current of the driver waveform, IG_high, is larger than the second current of the driver waveform, IG_low; and the first time period, T1, has a first duration and the second time period, T2, has a second duration. The method comprising: determining an optimised first duration by repeatedly modifying the first duration until an overshoot in an output waveform generated by switching the electrical switch using the driver waveform is less than a threshold; determining an optimised second duration based on the optimised first duration; and switching the electrical switch using the optimised first duration and the optimised second duration.

Abstract: A driver circuit is provided. The driver circuit comprises a power transistor and a gate driver circuit arrangement. The driver circuit is integrated in a package. In addition, the driver circuit comprises a terminal for an external transistor. The external transistor and the power transistor are controlled by the gate driver circuit arrangement in a mutually corresponding manner.

Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.

Abstract: Embodiments of the present disclosure include a bidirectional analog switch having a pair of high-voltage transistors coupled together via a common source and gate. The switches are configured to effectively isolate an input terminal from an output terminal by passing leakage and feedthrough to a power supply. In certain embodiments, an off-state pinned switch pins the common source voltage to a power source voltage. A logic circuit receives an input logic signal and generates two non-overlapped output logic signals for controlling the pair of transistors and the off-state pinned switch. In other embodiments, a resistor pins the common source voltage to a power supply voltage for passing leakage and feedthrough to the power supply.

Abstract: Various example embodiments are directed to methods and circuits for mitigation of on-resistance variation and signal attenuation in transistors due to body effects. In some embodiments, an apparatus includes a transistor configured to provide a data signal from a first one of the source or the drain to the other one of the source or the drain in response to a control signal provided to the gate. A body bias circuit is configured to bias the body of the transistor based on a voltage of the data signal to reduce variation in the on-resistance exhibited by the first transistor. As a result of the reduced variation in the on resistance, attenuation of the data signal is reduced.

Abstract: There exists a possibility that a semiconductor device configured with a normally-on JFET and a normally-off MOSFET which are coupled in cascade may break by erroneous conduction, etc. A semiconductor device is configured with a normally-on SiCJFET and a normally-off Si-type MOSFET. The normally-on SiCJFET and the normally-off Si-type MOSFET are coupled in cascade and configure a switching circuit. According to one input signal, the normally-on SiCJFET and the normally-off Si-type MOSFET are controlled so as to have a period in which both transistors are set in an OFF state.

Abstract: A sampled CMOS switch includes first and second NMOS devices in series between input and output nodes. The first and second NMOS devices are activated by a sample signal. A pair of low-voltage DEPMOS devices is connected in a “T” configuration between the input and output nodes. The low-voltage DEPMOS devices are activated by an inverted sample signal. A feedback circuit includes the DEPMOS devices together with a third high-voltage NMOS device and a current source. The third NMOS device is controlled by a signal on the input node. A switch switchably connects an analog voltage source to a source of the third NMOS device and gates of the DEPMOS devices in accordance with a phase of an inverted sample signal. The construction of the sampled CMOS switch enables the protection of the gate oxide insulation of the low-voltage DEPMOS transistors from high voltage damage.

Abstract: A sampled CMOS switch includes first and second NMOS devices in series between input and output nodes. The first and second NMOS devices are activated by a sample signal. A pair of low-voltage DEPMOS devices is connected in a “T” configuration between the input and output nodes. The low-voltage DEPMOS devices are activated by an inverted sample signal. A feedback circuit includes the DEPMOS devices together with a third high-voltage NMOS device and a current source. The third NMOS device is controlled by a signal on the input node. A switch switchably connects an analog voltage source to a source of the third NMOS device and gates of the DEPMOS devices in accordance with a phase of an inverted sample signal. The construction of the sampled CMOS switch enables the protection of the gate oxide insulation of the low-voltage DEPMOS transistors from high voltage damage.

Abstract: A coupling circuit has a first and a second transistor (P1, P2) of a p-channel field-effect transistor type. A drain terminal of the first transistor (P1) is connected to a signal input (1), source terminals of the first and the second transistor (P1, P2) are commonly connected to a signal output (2), bulk terminals of the first and the second transistor (P1, P2) are commonly connected to a drain terminal of the second transistor (P2), and a gate terminal of the first transistor (P1) is connected to a gate terminal of the second transistor (P2). The coupling circuit further comprises a gate control circuit (10) with a charge pump circuit (110) which is configured to generate a negative potential. The gate control circuit (10) is configured to control a gate voltage at the gate terminals of the first and the second transistor (P1, P2) based on a negative potential.

Abstract: A system includes a pass switch circuit and a first pass switch activation circuit. The pass switch circuit includes an impedance circuit and a pass transistor having a first source/drain connection, a second source/drain connection, and a gate input. The pass switch circuit passes an electronic signal from the first source/drain connection to the second source/drain connection in response to activation of the gate input. An impedance transfer function of the pass switch circuit is determined at least in part by an impedance of the impedance circuit and the impedance is sized to minimize attenuation of the electronic signal due to the impedance transfer function of the pass switch circuit. The first pass switch activation circuit provides a first activation signal to the gate input in response to an enable signal.

Abstract: Structures and methods for implementing alternating power gating in integrated circuits. A semiconductor structure includes a power gated circuit including a group of power gate switches and an alternating enable generator that generates enabling signals. Each respective one of the power gate switches is enabled by a respective one of the enabling signals. The alternating generator generates the enabling signals such that a first enabled power gate switch is alternated amongst the group of power gate switches.

Abstract: A delay method for determining an activation moment of an output device in a circuit system is disclosed. The delay method includes determining resistance of an over-current flag pull-high resistor of the circuit system, generating a current according to the resistance of the over-current flag pull-high resistor and a voltage drop across the resistor, duplicating the current to generate a first mirror current, delaying an enable signal of the circuit system according to the first mirror current to generate a charging activation signal, providing a charging current according to the charging activation signal, and determining the activation moment of the output device according to the activation current.

Abstract: A driver circuit facilitates reducing noises and losses and improving the driving performances thereof without connecting a series circuit of capacitor and a resistor to the gate of IGBT. The driver circuit includes a slope setting circuit that sets the gate voltage waveform of IGBT; and an operational amplifier that includes a non-inverting input terminal, to which an output voltage V* from slope setting circuit is inputted, and an inverting input terminal, to which a divided voltage Vgsf divided by resistors is inputted; and the operational amplifier outputs an output voltage Vout, proportional to the difference between the output voltage V* and the divided voltage Vgsf, to the gate of IGBT.

Abstract: The signal switch has flat resistance across the input/output voltage range when in the ON state while still isolating input/output nodes from overshoots and undershoots when in the off state.

Abstract: A driver circuit (for example, in a switching power supply or in a Class-D switching amplifier) drives a gate of a switch during a transition with a low output impedance during an initial period and then for the remainder of the transition drives the gate with a midrange output impedance. The switch in turn switches current flow through an inductor. The driver circuit includes a “Drive Node Voltage Dependent Impedance Circuit” (DNVDIC) that couples the gate to a supply voltage node. In one embodiment, there are two resistive current paths through the DNVDIC. A non-linear device in the first current path switches from having a small to a large impedance when a voltage drop across the device falls below a threshold voltage. The resulting increase in impedance of the first current path decreases voltage edge rates and reduces noise, whereas the low initial impedance reduces transition power losses.

Abstract: A drive circuit for driving a power device has a level shift circuit which level-shifts an ON signal and an OFF signal for controlling the power device in ON and OFF states, respectively, and which outputs the level-shifted ON and OFF signals, a mask circuit which stops transmission of the ON and OFF signals when both the ON and OFF signals are lower than a first threshold level, and a short circuit which is provided in a stage before the mask circuit, and which short-circuits a path for transmission of the ON signal and a path for transmission of the OFF signal when both the ON and OFF signals are lower than a second threshold level. The second threshold level is higher than the first threshold level.

Abstract: Analog bidirectional switches (20) comprising a first (1) and a second (2) transistor function badly in case of the signal voltage at an input or an output of the switch (20) exceeding the supply voltage used for operating the switch (20). By providing the switch (20) with a circuit (21), a second control signal (“f”) destined for the second transistor (2) is no longer generated by solely inverting a first control signal (“e”) destined for the first tranistor (1), but is generated in response to the first control signal (“e”) and by taking into account the in/output signal (“z”) at an in/output of the switch (20). The circuit (21) comprises a generator (22) for generating the second control signal (“f”) having either a fixed value or a value of the in/output signal (“z”), and comprises a detector (23) for supplying the in/output signal (“z”) to the generator (22). A further circuit (24) comprises a further generator for generating a backgate signal (“bg”) destined for the second transistor (2).

Abstract: A switch circuit selectively provides a reference voltage, needed in some I/O standards, to a logic device. The circuit receives a dedicated power supply that is different from the device's I/O supply. It may also include a level shifting circuit for converting a master control signal having a logic level determined by a first supply to a first control signal having a logic level determined by the dedicated supply. The switch circuit also includes a transmission switch that passes the reference voltage to an output in response to at least the first control signal. The transmission switch may be a CMOS transmission gate with at least one NMOS transistor controlled by the first control signal in parallel with at least one PMOS transistor controlled by a second control signal, complementary to the first. The second control signal may be generated by another level shifting circuit and have a logic level determined by the I/O supply.

Abstract: An integrated circuit on a system board is used, for example, in a digital audio device (such as a DVD or A/V receiver). The integrated circuit includes a digital-to-analog converter and the system board may include circuitry to mute the analog output of the device under certain predefined conditions. Because it may not be known in advance by the designer of the integrated circuit whether the circuit is activated by a signal in a high state (polarity) or a low state, the integrated circuit includes a detector which detects and stores the required polarity. When it is necessary for the circuit to be activated, the detector provides a signal of the correct polarity.

Abstract: A CAN controller is equipped with a control circuit that can control whether or not an edge detection signal of a serial signal (CRX input) that is detected by an edge detection circuit is to be input to a re-synchronization circuit causing the execution of a re-synchronizing function prepared in accordance with a CAN protocol. The re-synchronizing function can be made ineffective by inputting into a control signal the control circuit. As a result, the state of synchronization of the CRX input that occurs due to the re-synchronizing function ceases to fluctuate. Therefore, in the CAN controller, a test can be performed with a high speed and stably and without being influenced by the execution of the re-synchronizing function.

Abstract: A semiconductor integrated circuit includes a switch unit for controlling the supply of a power source voltage to a signal amplification circuit for receiving an input signal, and a control unit for selectively turning ON and OFF the switch unit in accordance with the amplitude or frequency of the input signal. By this constitution, it is possible to provide an input circuit or an output circuit capable of being applied to an input/output interface adapted for a small amplitude operation.

Abstract: A high-side, low-side driver that controls voltage from a voltage source to an inductive or resistive load includes a power transistor with a gate, a source and a drain. The driver is configured in a high-side configuration when the load is connected between the source and ground and the drain is connected to the voltage source and in a low-side configuration when the load is connected between the drain and the voltage source and the source is connected to ground. A gate drive circuit turns the power transistor on and off. The positive clamp circuit is connected to the drain and the voltage source. The positive clamp circuit provides a recirculation path for inductive energy that is stored in the inductive load when a loss of reverse battery condition occurs or when ground is lost.

Abstract: A method and apparatus of an output buffer for controlling the ground bounce and power supply noise during output switching is provided. A CMOS output buffer comprises a P-channel output transistor, a N-channel output transistor and a predrive circuit. During output pull-down transition, the predrive circuit generates a first gate voltage on the pull-down N-channel output transistor for a predetermined time, and further generates a second voltage value which is smaller than the first voltage value, then returns to the first voltage value after the elapse of the predetermined time. The predrive circuit makes the pull-down N-channel output transistor stay in the saturation region longer than the uncontrolled scheme, the steep rising gate voltage on the N-channel output transistor can be avoided with a very little speed degradation but instead of better ground bounce improvement.

Abstract: The programmable impedance circuit of the present invention includes a dummy resistance element dummy buffer means including a plurality of buffer portions, each buffer portion having a serial circuit made of a transistor and a resistance element, a binary selection signal generating circuit, connected to the dummy resistance element and the dummy buffer means, for controlling a current flowing in the dummy resistance element and a current flowing in a predetermined buffer portion of the dummy buffer to be equalized to each other, and outputting binary selection signals of a logic level corresponding to that it is regarded that matching of impedances before being input to an output buffer is achieved when both the currents are equalized to each other, and output buffer means for suppressing a variance of the impedance value even when an output voltage is in a transiently changing state, in accordance with the logic level of the binary selection signal as receiving binary selection signals from the binary sele

Abstract: A power switching device which decreases both surge voltage and switching loss. As the inductor is connected to the emitter electrode of the IGBT element, the potential of the emitter electrode changes in the direction in which the IGBT element maintains the ON state with the attenuation of the main current when the IGBT element turns OFF from ON. Furthermore, as the inductor is included in the path of the OFF driving current for bringing the IGBT element to OFF, the OFF driving current once raises and then decreases. As a result, because the transition from ON to OFF calmly proceeds, the occurrence of the surge voltage is suppressed. On the other hand, since the inductor is not included in the path of the ON driving current, the transition from OFF to ON of the IGBT element is rapidly made. Accordingly, the switching loss occurring in the transition period is decreased. The decrease in the surge voltage and the decrease in the switching loss are compatibly realized.

Abstract: A bus switch for transferring logic signals between nodes without the problems associated with undershoot conduction. The bus switch is an FET switch including a single primary transfer transistor. The bulk of the transfer transistor is coupled to a bulk regulating circuit including a pseudo low-potential power rail. The pseudo low-potential rail is coupled to one arbiter circuit associated with one of the two circuit transfer nodes and a second arbiter circuit associated with the other of the two transfer nodes. The arbiter circuits are coupled to their respective nodes or pads and to a common low-potential supply rail. The arbiter selects for coupling to the pseudo low-potential rail the signal of the lower potential between that at the pad and that of the low-potential rail. This arrangement ensures that there will be no parasitic conduction of the transfer transistor during undershoot conditions.

Abstract: An improved output driver that minimizes source point reflections when driving a signal on a transmission line by generating a constant source impedance. The improved output driver uses a transistor switching circuit for generating a nearly constant channel impedance when transistor switching circuit is enabled and is not operating in a saturation mode. A switched diode circuit is coupled in parallel to the transistor switching circuit for generating a nearly constant source impedance when a sufficient voltage to bias the switch diode circuit is applied. Control circuitry is coupled to both the transistor switching circuit and to the switched diode circuit for enabling and disabling the transistor switching circuit and the switched diode circuit. By alternatively enabling and disabling the transistor switching circuit and the switched diode circuit the control circuit is able to generate a constant source impedance.

Abstract: A pass gate circuit includes a pass transistor and a body bias control circuit for biasing the body of the pass transistor to reduce body effect. The body bias control circuit includes one or more control transistors arranged to selectively connect the substrate (body) of the pass transistor to the drain or gate of the pass transistor when predetermined voltages are applied to the drain and gate of the pass transistor. As a result, the pass transistor exhibits a reduced body effect in the on-state. In one embodiment, the body bias control circuit includes a first control transistor having a drain and gate connected to the gate of the pass transistor, a gate connected to the drain of the pass transistor, and a source. The body bias control circuit also includes a second control transistor having a drain connected to the source of the first control transistor, a source connected to a body of the pass transistor, and a gate connected to the drain of the pass transistor.

Abstract: In a preferred embodiment, a multi-configurable output driver, including: first circuitry to provide driving current to an inductive load; the first circuitry being configurable, without the addition or rearrangement of components, in at least two different output topographies; and second circuitry to configure the first circuitry in a selected one of the at least two different output topographies in response to input signals.

Abstract: The invention is embodied in a receiver and a method for responding to an input signal. The input signal is received in a first stage of the receiver, which generates a first stage output signal responsive thereto. If the input signal does not exceed a first level, the first stage output signal is generated by an overvoltage element. That is, for this case, the overvoltage element passes the input signal through to the first stage output, and the first stage output voltage is not increased by a first stage pullup element. If, on the other hand, the input signal exceeds the first level, the first stage output signal voltage level is increased by the first stage pullup element to a higher output voltage level. The output signal from the first stage is received in a second stage. The second stage generates a second stage output responsive thereto.

Abstract: Disclosed is a switch circuit which has a depletion mode n-channel MOSFET which can be used in a circuit allowing only a positive voltage to be supplied thereto, comprising a first D-FET having a gate for receiving an input signal, a drain for outputting an output signal and a source; a first resistor connected between the drain of the first D-FET and a positive voltage source to bias the drain of the first D-FET; a second D-FET having a gate connected to an intermittence controlling voltage source, a drain and a source connected to the positive voltage source and the source of the first D-FET 201, respectively; a second resistor connected between the gate of the second D-FET and a ground to bias the gate of the second D-FET; a constant-current source connected between each of the sources of the first and second D-FET and the ground; a bypass capacitor connected in parallel with the constant-current source and between the drain of the constant-current source and the ground to bypass an RF signal to the ground

Abstract: A control and monitoring circuit for a power switch comprises a first portion (20) connected to this switch and fed with reference to a floating voltage (V.sub.F) of an electrode of this switch, a second portion (10) connected to circuits external to the switch and fed with reference to a fixed voltage, a coder (40) arranged on the side of the second portion and a suitable decoder (50) arranged on the side of the first portion.