Abstract: A method for switching a cycle in a power transistor circuit is created, especially in a parallel circuit of power transistors. The method includes the step of specifying a switching time difference and the switching of the power transistors of two switching times which are separate from one another by use of the switching time difference.

Abstract: The disclosed transistor switching methodology enables independent control of transistor turn-on delay and slew rate, including charging, during a pre-charge period, a transistor control input to a threshold voltage VT with a predetermined turn-on delay; and then charging, during a switch-on period, the transistor control input from VT to an operating point with a predetermined slew rate. This methodology is adaptable to load switching applications, for example, to control a high side/low side load switch such that, during the switch on period, the output voltage supplied to the load rises from zero volts to an operating load voltage with the predetermined slew rate. In one embodiment, I_delay and I_slew_rate currents are used to charge the transistor control input respectively during the pre-charge and switch-on periods.

Abstract: A transmission gate self-biases its transistors to provide a constant gate biasing that provides a consistent path for an input signal to be cleanly passed to the gate's output and protects the transistors' gate oxide in cases of high input signals. An array of matched transistors are arranged to be biased by a voltage input node and with a current source configured to provide a bias current across individual transistors of the array of matched transistors. A current sink is configured to sink the bias current across the individual transistors to set a bias voltage at a voltage input node to a multiple of a gate-to-source voltage for the individual transistors of the array of matched transistors. A different set of transistors is configured to provide a signal path for an analog input signal.

Abstract: Provided is a semiconductor circuit. The semiconductor circuit includes: an input node configured to receive an enable signal, a sense enable signal, and a clock signal; and a clock gating circuit configured to output an enable clock signal corresponding to the clock signal while a signal level of the enable signal is at a first level regardless of a signal level of the sense enable signal, when the semiconductor circuit is in a high-voltage mode, and output an enable clock signal corresponding to the clock signal while a signal level of at least one of the enable signal and the sense enable signal is at the first level, when the semiconductor circuit is in a low-voltage mode.

Abstract: A control circuitry and a method for controlling a bi-directional switch is provided. The bi-directional switch having a control terminal for receiving a control voltage to control an on state and an off state of the bi-directional switch and at least one semiconductor switch in a bi-directional main current path. The control circuitry comprises an energy storage element, a coupling means to couple the energy storage element to a supply voltage to charge the energy storage element, and a control circuit configured to receive power from the energy storage element and configured to supply the control voltage having a voltage level being independent of the supply voltage when the energy storage element is not coupled to the supply voltage. The coupling means is configured for only coupling the energy storage element to the supply voltage when the bi-directional switch is in the off state.

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.

Abstract: An integrated circuit 2 includes a transistor 26 Which has a normal switching speed arising during normal operations of that transistor that apply electrical signals within normal ranges. If it is desired to change the speed of operation of the transistor, then speed tuning circuitry 12 applies a tuning electrical signal with a tuning characteristic outside of the normal range of characteristics to the transistor concerned. The tuning electrical signal induces a change in at least one of the physical properties of that transistor such that when it resumes its modified normal operations the switching speed of that transistor will have changed. The tuning electrical signal may be a voltage (or current) outside of the normal range of voltages applied to the gate of a transistor so as to induce a permanent increase in the threshold of that transistor and so slow its speed of switching. Temperature of a transistor may also be controlled to induce a permanent change in performance/speed.

Abstract: An Nth shift register includes a pull up unit, a driving unit, a first pull down unit, a second pull down unit, and a third pull down unit. The pull up unit is used for providing a first pull up signal according to a first clock signal, a second clock signal, and a starting pulse. The driving unit is used for providing a driving signal according to the first pull up signal and providing a gate signal according to the first clock signal and the driving signal. The first pull down unit is used for pulling down the first pull up signal according to the first clock signal. The second pull down unit is used for pulling down the driving signal according to a second pull up signal. The third pull down unit is used for pulling down the gate signal according to the second clock signal.

Abstract: According to one aspect of this disclosure, a circuit arrangement is provided, the circuit arrangement including an electronic component coupled to at least one common power supply node and configured to provide a first signal having a variation in time that is based on power supply via the at least one common power supply node; a detecting circuit coupled to the electronic component, the detecting circuit being configured to detect the first signal and to provide a digital switch array control signal based on the variation in time of the first signal; and a switch array coupled between the at least one common power supply node and at least one power supply source, the switch array being configured to control the power supply via the at least one common power supply node based on the digital switch array control signal.

Abstract: In a clear period, transistors NT38 and PT38 turn on and state retention nodes HQ and H/Q are cleared to an L level and an H level, respectively. In this clear period, a transistor NT21 is off. Consequently, a precharge node PS maintains itself at an H level. Thus, transistors PT31 and NT32 are off, thereby preventing a short circuit from occurring in a clear period. A short circuit is also prevented from occurring in a preset period.

Abstract: A skew signal generator is provided which comprises a fuse signal generating unit for generating a plurality of fuse signals, and an encoder for generating skew signals including skew information of a wafer by encoding the fuse signals.

Abstract: A circuit includes a delay circuit, a transition detector, a pre-driver circuit, and a controller. The delay circuit includes an input for receiving a signal and an output for providing a delayed version of the signal. The transition detector is coupled to the input of the delay circuit to detect a transition within the signal and to provide a look ahead signal to a detector output. The pre-driver circuit includes an input coupled to the output of the delay circuit, a control input, at least one signal output, and a plurality of a bias outputs. The controller is coupled to the detector output and to the control input of the pre-driver circuit and is configured to control bias signals on a plurality of bias outputs to selectively increase a driving strength of signals and biases applied to an output stage in response to the look ahead signal.

Abstract: Capacity degradation due to charge/discharge cycles is suppressed in either a non-aqueous electrolyte secondary cell provided with a positive electrode including, as a positive electrode active material, a lithium-transition metal complex oxide having a layered structure and containing at least Ni and Mn as transition metals, and a negative electrode containing a carbon material as a negative electrode active material and having a higher initial charge-discharge efficiency than that of the positive electrode, or an assembled battery having a plurality of cells each of which is the secondary cell. A control circuit incorporated in the secondary cell or the assembled battery, or in an apparatus using the secondary cell or the assembled battery, monitors the voltage of the secondary cell or each of the cells in the assembled battery so that the end-of-discharge voltage of each cell is 2.9 V or higher.

Abstract: A skew signal generator is provided which comprises a fuse signal generating unit for generating a plurality of fuse signals, and an encoder for generating skew signals including skew information of a wafer by encoding the fuse signals.

Abstract: A semiconductor device includes an inverter having an NMOSFET and a PMOSFET having sources, drains and gate electrodes respectively, the drains being connected to each other and the gate electrodes being connected to each other, and a pnp bipolar transistor including a collector (C), a base (B) and an emitter (E), the base (B) receiving an output of the inverter.

Abstract: An output switch driving capability booster which may effectively reduce a propagation delay in an output switch with an independently controllable output transition change rate. A delay controller coupled to the output switch may be used to control the propagation delay. The delay controller may have a switch which may be switched on and off approximately simultaneously with the output switch, and a resistance device which may be adjusted to reduce the propagation delay.

Abstract: An integrated circuit includes an input terminal for applying an input signal, a further input terminal for applying a further input signal having a level differing from the level of the initial input signal, an output terminal for providing an output signal, a switching unit having a controllable switch, which is arranged between the input terminal and the output terminal, and a further switching unit, which is arranged between the further input terminal and the output terminal. The integrated circuit is operated in a first and subsequent second operating state. The controllable switch of the switching unit is controlled to be conductive in the first and second operating state. In the first operating state, the output signal is provided in dependence on the level of the input signal, and in the second operating state in dependence on the level of the second input signal.

Abstract: The present invention is directed to a system and method for measuring a current in an integrated circuit comprising measuring a first output count from a first voltage controlled oscillator (VCO) using a first measurement voltage, simultaneously measuring a second output count from a second VCO using a second measurement voltage, and calculating the current in the integrated circuit using a voltage proportional to a difference between the first and second output counts.

Abstract: A drive circuit includes a gate voltage detector that detects a gate-emitter voltage Vge that appears between the gate and emitter of a power semiconductor device throughout a detection time period during which a sampler allows the process of detecting the gate-emitter voltage Vge, and that recognizes the occurrence of an abnormality in the power semiconductor device when the gate-emitter voltage Vge exceeds a reference value. Therefore, the drive circuit can protect the power semiconductor device with higher reliability by promptly detecting the occurrence of a short circuit even when the power semiconductor device is resistant to high voltages.

Abstract: A synchronized data capture circuit configured to synchronize capturing of data in a first plurality of data signals with a first plurality of timing signals to output a synchronized data capture signal. The synchronized data capture circuit includes a timer generator having a first timer generator output. The timer generator is coupled to receive the first plurality of timing signals and to serially output on the first timer generator output, as a first high frequency timing pulse stream, first timing pulses responsive to timing pulses of the plurality of timing signals. The first high frequency timing pulse stream has a timing pulse stream frequency that is higher than a timing input frequency associated with one of the first plurality of timing signals. The synchronized data capture circuit also includes first plurality of data driver circuits coupled to receive the first plurality of data signals and the plurality of timing signals.

Abstract: A self-power down circuit for a controller coupled to a battery to obtain power from the battery. The controller has a port, the state of which changes during powering up of the controller. The circuit includes a first switching device including a main current conducting path and a control terminal. The control terminal of the first switching device is coupled to the port for monitoring the state of the port. The circuit further includes a second switching device including a main current conducting path and a control terminal, and a switch. The port is coupled to the battery through the main current conducting path of the second switching device. The control terminal of the second switching device is coupled to the switch for actuation by actuation of the switch. The control terminal of the second switching device is also coupled to the main current conducting paths of the first and second switching devices through first and second voltage dropping elements, respectively.

Abstract: An object of the present invention is to simply and rapidly adjust a delay time of a delayed clock signal in accordance with a change in frequency of an input clock signal. The present invention comprises: a pulse generating circuit for generating a pulse signal PULSE with a trailing edge of an input clock signal as a reference; an inverter chain consisting of a plurality of inverters; a pair of inverter chains for sequentially delaying output signals from the pulse generating circuit; a plurality of NOR gates for adjusting a delay time of each inverter in the inverter chain; and a plurality of NAND gates for similarly adjusting a delay time of each inverter in the inverter chain. Since the delay time of the delayed clock signal in a next cycle is set based on the pulse signal generated based on a trailing edge of the input clock signal, even if a cycle of the input clock signal varies, the delay time of the delayed clock signal can be rapidly changed in accordance with this variation.

Abstract: A system for preventing a powered-up sub-unit from driving a powered-off low-impedance load transitions to a NO_CLOCK state and tri-states output drivers of the sub-unit output unless a clock signal is received from a connected sub-unit. While in the NO_CLOCK state, the sub-unit periodically transmits bursts of clock signals to signal the other sub-unit that it is powered up.

Abstract: In an high-frequency LSI chip, a clock signal generating circuit establishes accurate synchronization between an input clock signal and an internal clock signal to prevent an input circuit from causing a synchronization shift. The clock signal generating circuit includes an input circuit for amplifying an input signal and outputting an amplified signal as a first internal signal; a variable delay circuit, on the basis of a control signal, for delaying the first internal signal and outputting a delayed signal as a second internal signal; a phase comparator for finding a phase difference between the input signal and second internal signal and outputting a phase difference signal indicative of the phase difference; and a control circuit for generating the control signal on the basis of the phase difference signal. Thus, the influences of a delay caused by the input circuit, which would not be avoided in the prior art, can be avoided and the accurate internal clock signal can be generated.

Abstract: A circuit is designed with a delay circuit (300) coupled to receive a clock input signal (CLK) and a control signal (DFT). The control signal has a first logic state and a second logic state. The delay circuit produces a clock control signal (*CLK) at a first time in response to the first logic state and at a second time in response to the second logic state. A clock circuit (200) is coupled to receive the clock input signal and is enabled by the clock control signal. The clock circuit produces a first clock pulse signal having a predetermined width in response to a first transition of the clock input signal and produces a second clock pulse signal having the predetermined width in response to a second transition of the clock input signal.

Abstract: A semiconductor device is provided which has a plurality of output drivers whose slew rates are differentially controlled. The slew rates of the output drivers are controlled by a control means such that the slew rate of at least one of the output drivers is different than the slew rate of another output driver. Preferably, the slew rates are differentially controlled such that an output driver that drives a signal that reaches an output pin of a semiconductor package later slews at a faster rate than an output driver that drives a signal that reaches an output pin of a semiconductor package earlier. In this way all of the output pins of a semiconductor package can be driven to change states at approximately the same time. The slew rates of the output drivers can be differentially controlled through the utilization of programmable resistors.

Abstract: A variable delay circuit includes a load on a signal transfer line, at least one transistor connected to the signal transfer line. Each transistor is controlled by a gate voltage thereof so that a signal on the signal transfer line is delayed in response to a magnitude of the gate capacitance connected thereto.

Abstract: A circuit comprising a comparator circuit and a control circuit. The comparator circuit may be configured to present an output signal in response to (i) a reference current and (ii) a control current. The control circuit may be configured to generate the control current in response to (i) a first current source configured to present a fixed portion of the control current, (ii) a second current source configured to present a variable portion of the control current and (iii) a sense transistor. The second current source generally responds to a level of said control current.

Abstract: A bus driver circuit for high speed data transmission includes a plurality of delay blocks connected in series one to another which varies a rise and fall time of an input signal in order to shape an output waveform. Each block includes one or more delay elements for providing a predetermined delay period. A selector input is provided for each delay block such that one or more of the predetermined delay periods can be selected. Hence, the rise and fall time of the input signal can be varied depending upon which block or combination of blocks have been selected to shape the resultant waveform. An output circuit is also included which superimposes the input signal on the resultant output waveform.

Abstract: An electronic delay circuit (10) for use in a detonator (100) has a switching circuit (20) and a timer circuit (22). Switching circuit (20) controls the flow of a stored charge of electrical energy from a storage capacitor (12) to a bridge initiation element such as a semiconductor bridge (18) or a tungsten bridge. The timing of the release of this energy is controlled by timer circuit (22). Switching circuit (20) is an integrated, dielectrically isolated, bipolar CMOS (DI BiCMOS) circuit, whereas timer circuit (22) is a conventional CMOS circuit. The use of a DI BiCMOS switching circuit allows for greater efficiency of energy transfer from the storage capacitor (12) to the semiconductor bridge (18) than has previously been attained.

Abstract: A clock deskew circuit comprises a variable delay module and a control module. Included in the variable delay module are an input terminal for receiving a digital input clock signal, a control terminal for receiving an analog control signal, and a delay circuit which propagates the input clock signal from the input terminal to a buffer such that certain type signal edges (i.e., rising edges or falling edges) are delayed for a time interval which is varied in a continuous fashion by the magnitude of the control signal. Included in the control module is a feedback lead which receives the delayed clock signal from the buffer of the delay module, another lead which carries the input clock signal, and a control signal generating circuit.

Abstract: An output buffer is provided which receives an input signal for output onto an output terminal. The output buffer has a first driver and a second driver for driving the output terminal to a voltage corresponding to a logic value of the input signal. The second driver has a higher driving capacity than the first driver. The output buffer also has control circuitry receiving a transition in logic value of the input signal and at least one mode signal. The control circuitry responds to the transition in logic value by delaying the second driver from driving the output terminal to a complementary voltage until after the first driver begins to drive the output terminal to the complementary voltage. In so doing, the control circuitry delays the second driver by a first delay, when the mode signal(s) indicates a full speed mode. On the other hand, the control circuitry delays the second driver by a second delay, that is longer than the first delay, when the mode signal(s) indicates a low speed mode.

Abstract: Disclosed is a voltage-controlled oscillator which has delay units 11A which have variable resistance circuits 111 and are connected in the form of a ring, and control signal lines 5, 6 for transmitting a control signal CG which can vary control gain. The variable resistance circuits 111 can vary the variation of resistance in response to the control signal CG.

Abstract: A VCO includes an oscillator and a controller for controlling the operation of the oscillator. The oscillator is formed by connecting odd number of stages of delay circuits in a ring form. The controller creates a second control voltage based on an input first control voltage. The second control voltage is set in a symmetrical relation to the first control voltage with respect to an intermediate potential between the power supply and the ground set as a reference. Each of the delay circuits includes an inverter, first and second current control circuits, and first and second current value setting circuits. The inverter includes a first transistor of first conductivity type and a second transistor of second conductivity type to receive and output a signal. The first current control circuit is connected between the first transistor and the ground, for controlling a current flowing in the first transistor when the first transistor is set in the conductive state according to the first control voltage.

Abstract: A digitally adjustable time delay circuit which is able to precisely and selectively provide fine delay steps increments, which increments can be one nth of the delay time of one CMOS inverter, including means to adjust the total range of the delay and size of each delay step.

Abstract: An latch circuit includes an input line receiving electrical signals from a bus, a latch for conducting electrical signals from the precharged bus to a receiving circuit, and a structure for enabling the latch only when data is driven onto the bus.

Abstract: A voltage regulation circuit that includes a sample and hold circuit for sampling an input voltage and for holding a reference voltage generated in response to the input voltage. The sample and hold circuit includes a capacitor that holds the reference voltage. The voltage regulation circuit also includes a regulator circuit coupled to the capacitor of the sample and hold circuit. The regulator circuit outputs an output voltage using the reference voltage supplied by the capacitor. The voltage regulation circuit may be used to provide a high precision programming voltage for programming memory cells having two or more analog states.

Abstract: A microprocessor on-board RAM provides both the usual random access by addressing and a subset of memory cells with their contents continually available on a secondary bus paralleling the data bus. This secondary bus may be used for register indirect addressing without a separate register read when the RAM subset includes the registers for register indirect addressing. The processor also has a two stage output driver for limiting maximum output current and feedback-controlled clock period partitioning.

Abstract: The delay device 10 includes an ECL gate 11, the current source 16 and two resistive load elements 14, 15 of which are associated with an adjusting circuit 23 producing an adjusting voltage Vd, to cause the polarization current of the current source to vary hyperbolically, and a voltage Vh for keeping constant the voltage at the collectors of the transistors 12 and 13 of the gate 11. The delay device 10 causes the delays between the input signals IN, IN* and output signals OUT, OUT* to vary linearly. The invention is applicable in particular to systems for the transmission of digital data at a very high rate, of more than 1 gigabit per second, for example.

Abstract: An integrated circuit for generating a reset signal includes a circuit part having two first transistors being connected in series between terminals for a first and a second supply potential and each having a respective one of first and second mutually complementary channel types. A serial network acting as a voltage divider circuit is connected between the terminals for the first and the second supply potentials. The serial network includes at least two second transistors each having a respective one of the mutually complementary channel types and at least one element having a voltage drop during operation. The sources of the transistors of the first channel type are connected to the terminal for the first supply potential. The sources of the transistors of the second channel type are connected to the terminal for the second supply potential. The drains of the two first transistors form a first circuit node at which a reset signal is created in operation.

Abstract: A delay circuit includes a delay part delaying a signal by a delay time which can be varied based on a control current, and a control current adjustment circuit adjusting the control current so that the delay time changes linearly based on a variation in a resistance value.