Abstract: A thyristor circuit comprising at least one series circuit in which two or more thyristors are connected in series. Each thyristor is parallel-connected to an RC member. A control device can energize the thyristors individually and independently of each other by a control signal, so that each thyristor can be individually switched into its conducting condition. During a test sequence, the thyristors are switched successively into their conducting condition, wherein, in a series circuit and/or in the thyristor circuit, respectively only one thyristor is in its conducting condition. While a thyristor is conducting, the capacitor of the associate RC member discharges and produces a thyristor current. As a result, the conducting condition is maintained until the thyristor current falls below the holding current. The control device can use the thyristor voltage and/or the thyristor current to evaluate the function or the switching behavior of the thyristor.

Abstract: An overcurrent protection device may include an input terminal to receive an input current; an output terminal coupled to the input terminal; and a current limiter circuit integrated into the silicon substrate and arranged between the input terminal and output terminal. The current limiter circuit may include a series pass element having a pass state characterized by a first electrical resistance and a limit state characterized by a second electrical resistance higher than the first electrical resistance, the series pass element comprising a series current sense element integrated into the silicon substrate and configured to receive the input current and to output a sense voltage based upon the received input current, wherein the series pass element is configured to place the current limiter circuit into the limit state when the sense voltage indicates that the input current exceeds a predetermined level.

Abstract: A semiconductor device and an operating method for the same are provided. The semiconductor device includes a first doped region, a second doped region, a first doped contact, a second doped contact, a first doped layer, a third doped contact and a first gate structure. The first doped contact and the second doped contact are on the first doped region. The first doped contact and the second doped contact has a first PN junction therebetween. The first doped layer is under the first or second doped contact. The first doped layer and the first or second doped contact has a second PN junction therebetween. The second PN junction is adjoined with the first PN junction.

Abstract: An embodiment of a power device having a first current-conduction terminal, a second current-conduction terminal, a control terminal receiving, in use, a control voltage of the power device, and a thyristor device and a first insulated-gate switch device coupled in series between the first and the second conduction terminals; the first insulated-gate switch device has a gate terminal coupled to the control terminal, and the thyristor device has a base terminal. The power device is further provided with: a second insulated-gate switch device, coupled between the first current-conduction terminal and the base terminal of the thyristor device, and having a respective gate terminal coupled to the control terminal; and a Zener diode, coupled between the base terminal of the thyristor device and the second current-conduction terminal so as to enable extraction of current from the base terminal in a given operating condition.

Abstract: A method and a circuit for controlling a thyristor (V1) into conducting state, the thyristor (V1) being in a rectifier, which rectifier supplies DC voltage to a DC voltage circuit. The circuit comprising a trigger capacitor (C2) adapted to be charged from the voltage difference across the thyristor (V1) when the anode-to-cathode voltage of the thyristor is positive, a zener diode (V5) adapted to be triggered with the voltage of the trigger capacitor (C2), when the voltage of the trigger capacitor (C2) exceeds the breakdown voltage of the zener diode (V5), and an auxiliary thyristor (V3) adapted to be triggered with the current from the trigger capacitor (C2) flowing via the zener diode (V5), wherein the cathode of the auxiliary thyristor (V3) is connected to the gate of the thyristor (V1) for triggering the thyristor (V1) with the current from the trigger capacitor (C2) flowing via the auxiliary thyristor (V3) for using the thyristor (V1) in a diode mode.

Abstract: A method by which contaminant (soot) content in Diesel engine oil is determined using electrical conductivity measurements of the Diesel oil at a high frequency, or by which contaminant (soot and/or water and/or anitfreeze) content is determined using the ratio of electrical conductivity measurements of the Diesel oil at a high frequency to the electrical conductivity measurements of the Diesel oil at a low frequency. Both the conductivity ratio and the high frequency conductivity are essentially independent of the brand of oil. High frequency is defined to be above 2 MHz whereas low frequency is defined to be D.C. to about 1 kHz.

Abstract: The present invention relates to a normally-on bidirectional switch, including, in parallel between two power terminals of the switch, a first cathode-gate thyristor, the anode of which is connected to a first power terminal, a second anode-gate thyristor, the anode of which is connected to a second power terminal, and a resistor in series with a controllable switch, the midpoint of this series association being connected to the respective gates of the two thyristors. The present invention also provides a monolithic integration of the switch.

Abstract: A switching device has a control section to transfer a gate control signal which switches plural thyristors from an ON state to an OFF state after a parallel switch is open and an opening degree of the parallel switch is met where no arc discharge is generated at a contact point in the parallel switch.

Abstract: A method and/or apparatus used with a thyristor based AC-AC motor controller in a discontinuous current mode for providing power to thyristor gate drivers. The apparatus includes a snubber network and two rechargeable capacitors for storing input line voltage to an inversely connected pair of thyristors when both the thyristors are off. Stored voltage is provided via a power lead to each thyristor driver to provide power thereto and thus the circuit operates in a self-powered manner.

Abstract: An apparatus for use in the simultaneous deactivation of a set of series-connected switching devices includes gate command control logic to generate a gate command signal for application to a selected switching device of the set of series-connected switching devices. A command compensation circuit processes the gate command signal. The command compensation circuit includes a time differential measurement module that forms a time differential signal indicative of the time from the previous turn-off of the selected switching device and the previous turn-off of the last switching device in the set of series-connected switching devices. A time difference processing module of the command compensation circuit process the time differential signal and creates a delay signal. A delay module of the command compensation circuit delays the gate command signal in response to the delay signal. Each switching device of the set of series-connected switching devices includes a command compensation circuit.

Abstract: A control device for controlling a double gate semiconductor device having a second gate electrode for controlling transition from a thyristor operation to a transistor operation, and a first gate electrode for controlling transition from transistor operation to an ON/OFF operation, and for controlling a current passing from a collector electrode to an emitter electrode, includes a first gate control circuit for delaying a turn-off signal to the double gate semiconductor device and applying the turn-off signal to the first gate electrode.

Abstract: A gate power supply circuit including a switching device and a gate drive circuit connected to the switching device for generating a gate signal to be supplied to a gate of the switching device. The gate power supply circuit further includes a series circuit of a snubber capacitor and a snubber diode connected in parallel with the switching device, and an inductor, a first terminal of which is connected to a connection point of the switching device and the snubber diode. The gate power supply circuit also includes a series circuit of power disposing circuit and a first diode, connected between a series connection point of the snubber capacitor and the snubber diode and a second terminal of the inductor. The gate power supply circuit further includes a series circuit of a power supplying capacitor and a second diode, connected in parallel with the inductor.