Abstract: The invention relates to a control circuit for semiconductor devices which is formed on a substrate (1) doped by a first dopant type, the integrated circuit comprising a first epitaxial layer (2) grown on the substrate (1) and doped by the first dopant type, and an isolation well (3) doped by a second dopant type, the control circuit comprising at least a first control transistor (M1) formed in a first well (8) doped by the second dopant type and formed in the insulation well (3). Thus, the control circuit comprises at least one N-channel MOS transistor accommodated within a well in direct contact with the isolation well to eliminate a buried layer that, in prior art arrangements, involved the presence of an undesired parasitic component.

Abstract: A structure for preventing simultaneous conduction in the power transistors of an output circuit of an audio system includes an auxiliary device in each of the high side control and low side control circuits controlling the power transistors. The auxiliary device in the high side control circuit is turned on simultaneously with the high side power transistor to provide a control signal to the low side control circuit, thereby turning off the low side power transistor. Conversely, the auxiliary device in the low side control circuit is turned on simultaneously with the low side power transistor to provide a control signal to the high side control circuit, thereby turning off the high side power transistor. Thus, simultaneous conduction in the high and low side power transistors is prevented.