Abstract: A method of testing a PIN diode for a power limiter circuit comprises measuring a reverse bias current of the PIN diode; applying a reverse bias voltage to the PIN diode; increasing the reverse bias voltage until the reverse bias current of the PIN diode reaches a threshold current indicative of a reverse voltage breakdown; and determining whether the reverse bias breakdown voltage of the PIN diode is within an acceptable range of reverse bias breakdown voltages corresponding to a power range at which the power limiter circuit would enter power limiting mode with the PIN diode.

Abstract: A programmable resistance circuit provides a selected resistance by configuring a reference resistor to exhibit an effective resistance, in an operational sense, by achieving an average output voltage between a source line and a return line in the programmable resistance circuit. The average output voltage corresponds to the effective resistance. The effective resistance is achieved by utilizing a modulated voltage source to bias a transistor and intermittently draw current across the reference resistor according to the duty cycle of the modulated voltage source. A programmed resistance circuit can produce a selected resistance corresponding to button selection zones of a vehicle user interface when connected to a remote circuit that acts according to a user selection.

Abstract: The present disclosure provides a lighting device and a power switching circuit. The power switching circuit of the lighting device includes a plurality of power input circuits and a logic control circuit. The logic control circuit is configured to receive a first electrical signal, a second electrical signal, or a third electrical signal, and control a first-switching circuit electrically connected with an Nth power input terminal to be turned on according to the first electrical signal, control the first-switching circuit electrically connected with the Nth power input terminal to be turned off according to the second electrical signal, and control a first-switching circuit electrically connected with first to (N?1)th power input terminals to be turned off according to the third electrical signal; N is a positive integer less than or equal to a number of the power input circuits.

Abstract: Embodiments of a circuit, system, and method are disclosed. In an embodiment, a circuit includes a first microstrip transmission line, a second microstrip transmission line, and a slotline formation, wherein the slotline formation extends between the first microstrip transmission line and the second microstrip transmission line so that the slotline formation is configured to electromagnetically couple the first microstrip transmission line to the second microstrip transmission line during operation of the circuit. In addition, the circuit includes at least one controllable capacitance circuit electrically connected to at least one of the first microstrip transmission line and the second microstrip transmission line, wherein a magnitude of capacitance of the at least one controllable capacitance circuit is controllable (e.g., in response to a capacitance control signal received at a control interface).

Abstract: A circuit for protecting an integrated circuit against fault injection attacks includes an element including a dielectric which is destroyed, resulting in the occurrence of a short-circuit. The element is connected between two terminals that receive a power supply voltage of the integrated circuit.

Abstract: Circuits, devices and methods are disclosed, including a phase shifter comprising a first node and a second node, and a first transmission line element having an inductance and a variable capacitance on each side of the inductance, the variable capacitance configured to provide a plurality of capacitance values to yield corresponding phase shift values based on an increment having a magnitude that is less than 90 degrees. In some implementations, the phase shifter further comprises a second transmission line element in series with the first transmission line element, the second transmission line element having an inductance and a variable capacitance on each side of the inductance configured to extend an overall phase shift range provided by the phase shifter.

Abstract: An operational amplifier, a driving interface, a measurement and control device, a driving circuit and a driver are provided. The operational amplifier is used as at least one of an input interface and output interface, and when the operational amplifier corresponds to one transistor (Q), an external circuit of the transistor further includes: a first port (Vdj), connected with a base (B) of the transistor (Q) through a first resistor (Rb); a second port (I/Oe), connected with an emitter E of the transistor (Q); a third port (I/Oc), connected with a collector (C) of the transistor (Q); and a fourth port (GND), connected with the emitter (E) of the transistor (Q) through a second resistor and used as a public port for signal input and signal output.

Abstract: According to an embodiment, a radio frequency delay line is described comprising a first conductor comprising a plurality of first inductors, a second conductor comprising a plurality of second inductors, wherein each of the plurality first inductors corresponds to a respective one of the plurality of second inductors and a plurality of inductor pairs, each inductor pair comprising a first inductor and the corresponding second inductor. For each of the plurality of inductor pairs, the first inductor and the corresponding second inductor are arranged so that an inductor area of the first inductor overlaps with an inductor area of the corresponding second inductor.

Abstract: A control circuit that is applicable to power supply systems that use synchronous rectification techniques is described. The control circuit provides a self-driven method of control to an active switch by sensing the current flow over the switch. The control circuit includes a diode, a MOSFET, and a BJT. The control circuit may include a first resistor and a second resistor that are both connected to a voltage source. An anode side of the diode is connected to the first resistor while a cathode side of the diode is connected to a drain of the MOSFET. The second resistor is connected to a collector of the BJT as well as a gate of the MOSFET. A base of the BJT is connected to the first resistor and the anode side of the diode. An emitter of the BJT is coupled to a source of the MOSFET.

Abstract: A one-direction conduction device includes a first transistor and a driving circuit. The first transistor has a control terminal coupled to a first node, and input and output terminals respectively coupled to input and output electrode terminals of the one-direction conduction device. In the driving circuit, a switch circuit is coupled to the input electrode terminal and a second node. A second transistor has a base and a collector both coupled to a third node, and an emitter coupled to the second node. A first resistor is coupled to the third node and ground. A third transistor has a base coupled to the third node, an emitter coupled to the output electrode terminal, and a collector coupled to the first node. The second resistor is coupled between the first node and the ground. The switch circuit breaks off a reverse leakage current path of the one-direction conduction device.

Abstract: A traveling wave detector and method of traveling wave signal detection employ a plurality of detector diodes connected according to different polarities with respect to adjacent ones of the detector diodes. The traveling wave detector includes a transmission line having an input end and a terminal end and the plurality of detector diodes connected as stated above and spaced apart along the transmission line. The traveling wave detector further includes a plurality of direct current (DC) blocks to define a series conduction path. The method of traveling wave signal detection includes rectifying a received incident signal using the traveling wave detector to produce a video signal at each of the detector diodes and summing the video signals along the series conduction path to produce an output video signal.

Abstract: An LED input emulator to interface a signal source designed for use with an LED optocoupler, to capacitive or other galvanic isolation circuitry, emulating LED forward and reverse bias voltages. VR reverse blocking circuitry includes MP1 and MP2 PMOS transistors coupled to an emulator anode port, and to emulate LED reverse bias voltage. VF control circuitry includes a variable resistance (MP3) coupled between anode and cathode ports, and a current control circuit coupled to an output node, and to control current through the variable resistance to maintain a desired forward voltage at the output node. In an example embodiment, the VF control circuitry is implemented with an amplifier and a bandgap voltage reference circuit coupled to the output node, generating both reference and feedback voltages input to the amplifier to control the variable resistance.

Abstract: A high power, high current Unidirectional Transient Voltage Suppressor, formed on SiC starting material is disclosed. The device is structured to avalanche uniformly across the entire central part (active area) such that very high currents can flow while the device is reversely biased. Forcing the device to avalanche uniformly across designated areas is achieved in different ways but consistently in concept, by creating high electric fields where the device is supposed to avalanche (namely the active area) and by relaxing the electric field across the edge of the structure (namely in the termination), which in all embodiments meets the conditions for an increased reliability under harsh environments.

Abstract: A highly linear, variable capacitor array constructed from multiple cells. Each cell includes a pair of passive, capacitor components connected in anti-parallel. The capacitor components may be Metal Oxide Semiconductor (MOS) capacitors. A control circuit applies bias voltages to bias voltage terminals associated with each capacitor component, to thereby control the overall capacitance of the array.

Abstract: Systems and methods related to single molecule switching devices are disclosed. One example method can include the step of applying a tunneling current across a tunneling junction. The tunneling junction can include an endohedral fullerene that includes a fullerene cage and a trapped cluster or a trapped atom. Such a method can also include exciting one or more internal motions of the trapped cluster or the trapped atom based at least in part on the tunneling current, and changing the conductance of the endohedral fullerene based at least in part on the one or more excited internal motions. One or more electronic processes can be controlled based at least in part on the changed conductance of the endohedral fullerene.

Abstract: An electronic device includes a drift region having a first conductivity type and a grid including a plurality of doped regions formed in the drift region and having a second conductivity type. The doped regions have a dopant concentration greater than 2.2×1019 cm?3. Related methods are also disclosed.

Abstract: A method and system of optimizing transmit beam forming in a multiple radio wireless system is provided. A stimulus signal can be provided to an analog receive input of a device under test (DUT), wherein the DUT includes multiple radios. A receive phase and amplitude can be measured at baseband using the stimulus signal for each radio. At this point, a receive weight and its conjugate can be determined using the receive phases and amplitudes. A calibration vector and its conjugate can also be determined, wherein a product of the receive weight conjugate and the calibration vector conjugate generate a transmit weight. This transmit weight can be applied to transmit signals during the transmit beam forming using the multiple radios.

Abstract: Systems and methods related to single molecule switching devices are disclosed. One example method can include the step of applying a tunneling current across a tunneling junction. The tunneling junction can include an endohedral fullerene that includes a fullerene cage and a trapped cluster or a trapped atom. Such a method can also include exciting one or more internal motions of the trapped cluster or the trapped atom based at least in part on the tunneling current, and changing the conductance of the endohedral fullerene based at least in part on the one or more excited internal motions. One or more electronic processes can be controlled based at least in part on the changed conductance of the endohedral fullerene.

Abstract: Low leakage diodes and methods of forming the same are disclosed. In one embodiment an apparatus includes a designed or parasitic bipolar transistor having an emitter, a base and a collector. The bipolar transistor is configured to operate as a diode, the diode having reverse-biased and forward-biased modes of operation. The emitter and base operate as first and second terminals of the diode, respectively. The collector is configured to receive a collector bias voltage, which is controlled relative to a voltage of the emitter to reduce a diffusion leakage current of the diode when the diode is in the reverse-biased mode of operation.

Abstract: A three-pole three-throw switch and a communication device employing the three-pole three-throw switch includes six diodes and six inductors. The six diodes are connected in series with a same direction. Common nodes of each two diodes form three poles and three throws. The three poles and the three throws are linked together in circular form. The three poles and the three throws receive control signals via the six inductor, respectively.

Abstract: A three-pole three-throw switch and a communication device employing the three-pole three-throw switch includes six diodes and six inductors. The six diodes are connected in series with a same direction. Common nodes of each two diodes form three poles and three throws. The three poles and the three throws are linked together in circular form. The three poles and the three throws receive control signals via the six inductor, respectively.

Abstract: A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.

Abstract: An integrated circuit comprises a circuit used for storing or processing data and a radiation-sensitive thyristor structure configured to conditionally short two power supply terminals of the integrated circuit. The thyristor structure is configured to turn on in response to a region of the thyristor structure being irradiated with radiation to which the thyristor structure is sensitive, in order to establish an electrically conductive connection between a first power supply terminal of the power supply terminals of the integrated circuit and a second power supply terminal of the power supply terminals of the integrated circuit. The thyristor structure is further configured so that a power density of the radiation needed for turning on the thyristor structure is lower than a power density of the radiation needed for a change of data of the circuit used for storing or processing data.

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract: A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed between the top electrode and the bottom electrode. The estimation circuit estimates the amount of a charge accumulated in the insulating film of the electrostatic actuator. The storage circuit stores a result of the estimation of the charge amount by the estimation circuit. The bias circuit changes, on the basis of the estimation result stored in the storage circuit, a drive voltage to drive the electrostatic actuator.

Abstract: This invention is based on the contents of the U.S. Pat. No. 5,831,349 and Chinese Invention Patent ZL94112284.0, ZL94114032.6 as their follow-up invention. The invention involves the technical schemes of several linkage apparatuses of AC two-wire solid-state switches. All of the AC two-wire solid-state switches of the linkage apparatuses must be the non-contact ON-OFF in the main circuits of the AC two-wire solid-state switches of the said three patents. This invention is intended to combine several or multiple the AC two-wire solid-state switches into linkage apparatus so that all of the said switches have consistently-combined ON-OFF actions, so that the application range of the AC two-wire solid-state switches is expanded from the single-phase circuit to three-phase circuit, from the low-voltage power grid to the high-voltage power grid.

Abstract: Nanotube switching devices having nanotube bridges are disclosed. Two-terminal nanotube switches include conductive terminals extending up from a substrate and defining a void in the substrate. Nantoube articles are suspended over the void or form a bottom surface of a void. The nanotube articles are arranged to permanently contact at least a portion of the conductive terminals. An electrical stimulus circuit in communication with the conductive terminals is used to generate and apply selected waveforms to induce a change in resistance of the device between relatively high and low resistance values. Relatively high and relatively low resistance values correspond to states of the device. A single conductive terminal and a interconnect line may be used. The nanotube article may comprise a patterned region of nanotube fabric, having an active region with a relatively high or relatively low resistance value. Methods of making each device are disclosed.

Abstract: The present invention concerns doped organic semiconductors composites. In certain aspects, organic polymers are doped with large anions, such as DBS? and small mobile cations. Electronic components comprising organic polymer circuits such as, memory circuits and arrays thereof are also provided.

Abstract: An electric element includes a pair of electrodes; and a plurality of carbon nanotubes of three-dimensional network structure which are located between the pair of electrodes. The electric element can be applied for a memory element and the like.

Abstract: The invention relates to an electronic switching device for high-frequency signals. The invention is of particular use in the connection between a microwave frequency antenna and an electronic circuit. This circuit comprises one or two access points designed to be connected to the antenna forming a third access point. In the case of a switch between one access point and the antenna (called an SPST switch), it comprises two switching diodes, one, called a serial diode, being connected in series between the access points and the other, called a shunt diode, between one of the access points and an earth of the device.

Abstract: A switching element 100 includes an insulating substrate 10, a first electrode 20 provided on the insulating substrate 10, a second electrode 30 provided on the insulating substrate 10, and an interelectrode gap 40 provided between the first electrode 20 and the second electrode 30, a distance G between the first electrode 20 and the second electrode 30 being 0 nm<C?50 nm.

Abstract: A semiconductor device of the invention for miniaturizing and cost reduction includes: a solid-state relay 30 having a first light emitting element 10, a light triggered element 16 for receiving light from the first light emitting element 10, and translucent resin 23 for sealing the first light emitting element 10 and the light triggered element 16; a bidirectional input-type photocoupler 31 having second, third light emitting elements 12, 14 of antiparallel connection, a phototransistor 19 for receiving light from the second, third light emitting elements, and translucent resin 23 for sealing the second, third light emitting elements and the phototransistor 19; and a light shielding wall 25 for light-shielding the solid-state relay 30 and the bidirectional input-type photocoupler 31 from each other. The solid-state relay 30 and the bidirectional input-type photocoupler 31 are integrated into one package in a light-shielded state from each other by the light shielding wall 25.

Abstract: In a transmission/reception selection switch, a first diode is arranged in series with a transmission signal line and a second diode is arranged in shunt with a reception signal line. A first current route where a direct current passes through the first diode is connected in parallel to a second current route where a direct current passes through the second diode. When a predetermined positive voltage is applied to a control terminal, the diodes are turned ON and a direct current flows through, in order, the control terminal, a resistor, an inductor, the diode, a strip line, and an inductor), and a direct current flows through, in order, the control terminal, the resistor, the second diode, and the inductor.

Abstract: A selectively protected electrical system includes or operates with a power source, a load, a power driver circuit for controllably transferring power from the power source to the load, the power driver circuit being encapsulated in a potting material, and a controller for enabling and disabling the power driver circuit, the controller being un-encapsulated by the potting material. If a contaminant induced electrical fault occurs in the selectively protected electrical system, the electrical fault is more likely to occur in the un-encapsulated controller, such that the selectively protected electrical system is disabled. The contaminant is inhibited from contacting and inducing an electrical fault in the power driver circuit, thus providing for a controlled failure of the selectively protected electrical system.

Abstract: An electronic signal processing apparatus has a signal switch with a first and a second transistor of normally-on type, having main current channels coupled between an internal node and a switch input and output, respectively. A diode provides a switchable signal coupling between the internal node and ground. A switch control circuit has a control output that is DC coupled to the main current channel of the first and the second transistor via the internal node to control conduction of the main current channels. The diode is also DC-coupled to the internal node so that a DC potential of a terminal of the diode that controls whether the diode is on or off is determined by a potential of the internal node. The diode is preferably incorporated in the DC current path from the control output to the internal node, so that the diode is forward-biased when a control voltage that makes the main current channels non-conductive is applied.

Abstract: A loss-less diode equivalent circuit which functions to reduce and eliminate the forward bias voltage or drop associated with conventional diodes. The loss-less diode comprises a reverse connected MOSFET device which is configured with a clamping circuit and coupled to an input stage. The drain is coupled to the input stage which receives an input signal. The source of the MOSFET device provides an output port for charging a capacitor in a conduction or on state.

Abstract: A loss-less diode equivalent circuit which functions to reduce and eliminate the forward bias voltage or drop associated with conventional diodes. The loss-less diode comprises a reverse connected MOSFET device which is configured with a clamping circuit and coupled to an input stage. The drain is coupled to the input stage which receives an input signal. The source of the MOSFET device provides an output port for charging a capacitor in a conduction or on state.

Abstract: A circuit configuration produces an at least approximately ideal diode characteristic on the basis of a diode. A power MOSFET has a control path connected in parallel with the diode, a load path forming connection terminals of the ideal diode, and a gate connection to which a predetermined voltage potential is applied, for turning on the power MOSFET in the forward-bias direction of the diode and turning off the power MOSFET in the reverse-bias direction.

Abstract: In a high frequency switch, first and second diodes are respectively connected between first and second ports and between first and third ports so that they are directed in the same direction with respect to the first port. Coupling capacitors are connected on both sides of the respective diodes. Distributed constant lines and capacitors are connected between points of connection between the respective diodes and the corresponding capacitors, and reference potentials. Control voltage terminals are connected to points of connection between the distributed constant lines and the capacitors. A distributed constant line and a capacitor are connected between the first port and a reference potential. A fixed voltage terminal is connected through a resistor to a point of connection between the distributed constant line and the capacitor.

Abstract: A circuit than may be used in an integrated circuit capacitor design. The circuit generally comprises a multilayer capacitor and a buffer. The multilayer capacitor may be configured as (i) a first capacitance, (ii) a second capacitance, and (iii) a third capacitance in series between the first capacitance and the second capacitance. The buffer may be configured to maintain a constant voltage across the third capacitance to isolate the first capacitance from the second capacitance.

Abstract: A pulse generating circuit utilizes a drift step recovery transistor to apply power from a direct current power supply to a pulse forming network when a trigger pulse is applied thereto. The pulse forming network comprises a storage inductor connected in series with the transistor, a series connected separating diode and a drift step recovery diode which are connected in parallel with the storage inductor, a series connected pumping inductor and pumping resistor which together form a pumping circuit connected in parallel with respect to the separating diode, and a load resistor. Current passed via the transistor increases in the storage inductor and the pumping inductor and is blocked by the separating diode to inject electron-hole plasma from the pumping inductor into the drift step recovery diode when the transistor is conducting.

Abstract: An initialization strap is disclosed. The initialization strap includes an electronic device capable of receiving a control signal and of transmitting a first output signal in response thereto; a first diode capable of receiving the first output signal, the first diode being forward biased when the first output signal is received and being reverse biased otherwise; a first line over which the electronic device may transmit the first output signal to the first diode; and a first resistor capable of tying the line to a first predetermined voltage level.

Abstract: A circuit simulating the function of a diode in the sense that it conducts current in one direction and blocks current in the opposite direction, but which has a low forward voltage drop. A voltage comparator and a three terminal switch are connected so that the intrinsic reverse diode associated with the switch is harnessed to conduct current in the direction in which it is desired to conduct current and to block current in the direction in which it is desired to block current. A voltage comparator controls the control terminal of the three terminal switch to turn on the switch to conduct current from a terminal A to a terminal K when the voltage at terminal A is higher than the voltage at terminal K and to interrupt current from terminal K to terminal A when the voltage at terminal K is higher than the voltage at terminal A. The switch terminal (source or drain) that is typically connected to the higher voltage of two voltage terminals is instead connected to the lower voltage of the two voltage terminals.

Abstract: The positive potential side output of a voltage source (1) is connected to the positive potential side of a first circuit (10) through a terminal (6); the ground (negative potential) side output of voltage source (1) is connected through a terminal (8) to the ground (negative potential) side of first circuit (10). Also, the positive potential side output of voltage source (1) is lowered by a prescribed voltage .DELTA. V by a Schottky barrier diode (2) and is connected to the positive potential side of second circuit (11) through a terminal (7); the ground (negative potential) side output of voltage source (1) is raised by a prescribed voltage .DELTA. V by a Schottky barrier diode (4) and is connected to the ground (negative potential) side of second circuit (11) through a terminal (9). A power supply voltage supplying circuit can thereby be provided wherein latch-up is avoided while still keeping current consumption and electromagnetic interference (EMI) low.

Abstract: A bipolar radio frequency (RF) integrated circuit having a functional equivalent of a PIN diode. The RF integrated circuit includes a low frequency lateral PNP transistor having an emitter having a P+ region, a collector having a P+ region, a base having an N+ region and an N region having a current dependent stored charge having a relatively low level when no current is flowing between the emitter and a junction connecting the base and collector. An RF resistance between the emitter and the junction is controlled by a bias applied from the emitter to the junction. By varying the bias, the low frequency lateral PNP transistor from the emitter to the junction is used as a variable RF resistor or as an RF signal carrying component in a variable attenuator or RF switch.

Abstract: A current bypass circuit used in a semiconductor integrated circuit supplied with power from power sources having respective different DC voltages in relation to a reference potential, a p type (or n type) substrate of the semiconductor integrated circuit being connected to the reference potential, includes a current switching circuit and a voltage level detecting circuit. The current switching circuit is connected between the reference potential and the DC voltage source for switching between a conductive state and a cutoff state. The voltage level detecting circuit is connected to a control power source that maintains the current switching circuit in a conductive state when the voltage appearing across both terminals of the current switching circuit is equal or lower than a predetermined voltage. The voltage level detecting circuit cuts-off the current switching circuit when the voltage across both terminals of the current switching circuit exceeds a predetermined value.

Abstract: An integrated CMOS diode with an injection ring that enables construction of an integrated CMOS RF switch. Construction techniques of using a diffused n-well resistor, parasitic capacitance and construction of the diode underneath a bonding input pad contribute to performance of the switch as well as saving space needed to construct the switch.

Abstract: An output circuit is provided for obtaining an output signal at one of two voltages regardless of the relative difference between the voltage levels. The output circuit includes a first switching circuit that contains two current sources for selectively producing one of two constant currents. A second switching circuit receives one of the two constant currents. The first and second switches are connected by four series-connected forward biased diodes. There are also bypass connectors for selectively providing current around the first and fourth diodes. An output terminal is located between the second and third diodes. A high voltage source is located between the first switching circuit and the first diode. A low voltage source is located between the fourth diode and the second switching circuit. Depending which of the current sources are actuated, the signal present at the output terminal is either that of the high voltage source or that of the low voltage source.

Abstract: A controlled capacitor system, which includes a capacitor element (C1) and a forward-biased diode element (D2) connected in series with the capacitor element (C1). The system is such that the diode element (D2) has a capacitance which is less than the capacitance of the capacitance of the capacitor element (C1) when the diode element (D2) is under zero bias. The capacitance of the diode element (D2) is controlled by varying the forward current (I2) through the diode (D2). The forward current (I2) acting to control the capacitance of the diode element is selected such that the capacitance of the diode element (D2) is smaller than the capacitance of the capacitor element (C1) when the current (I2) through the diode element (D2) is below a minimum value. The capacitance of the diode element (D2) is bigger than the capacitance of the capacitor element (C1) when the current (I2) through the diode element (D2) exceeds a maximum value.

Abstract: An inventory management system which includes a transponder, an interrogation transceiver and control devices utilized therewith. The control devices operate to minimize the power consumption of the transponder while permitting selected, coded operation of the inventory management system. The interrogation transceiver provides linkage to the transponder by means of a modulated radio frequency (RF) carrier during system operation. A transmit/receive switch is also included in the invention to prevent harmful coupling between the transponder receiver and the transponder transmitter. This could occur during data exchanges between the transponder and the interrogation receiver.