Abstract: Systems and methods for providing one or more reference currents with respective negative temperature coefficients are provided. A first voltage is divided to provide a divided voltage, which is compared to a reference voltage (e.g., a bandgap reference voltage) to provide a control voltage. The first voltage and the one or more reference currents are based on the control voltage.

Abstract: A power supply controller having final test and trim circuitry. In one embodiment, a power supply controller for switched mode power supply includes a selector circuit, a trim circuit, a shutdown circuit and a disable circuit. The trim circuit includes a programmable circuit connection that can be selected by the selector circuit by toggling a voltage on an external terminal such as for example a power supply terminal, a control terminal or a function terminal of the power supply controller. The programmable circuit connection in the trim circuit can be programmed by applying a programming voltage to the external terminal. The shutdown circuit shuts down the power supply controller if the temperature rises above an over temperature threshold voltage. The shutdown circuit includes adjustment circuitry that can be used to test the shutdown circuit. The adjustment circuitry can adjust and reduce the over temperature threshold of the power supply controller.

Abstract: A non-radiation hardened N-channel transistor used in a power switching circuit functioning in a high-ionizing, radiation-dose environment. The circuit including at least one non-radiation hardened N-channel MOSFET switching transistors, the transistor having a gate, drain and a source. The circuit also includes a stored voltage source. The stored voltage source is in series with the gate of the at least one non-radiation hardened N channel MOSFET switching transistors. A high impedance bleeder resistor is connected to the stored voltage source for returning the positive terminal of the stored voltage source to the channel MOSFET source terminal.

Abstract: A night-vision optical device of the invention with controlled life expectancy contains a time measuring device built into the housing of the aforementioned device for measuring the accumulated time of active work of the device. In application to a night scope for a firearm, the device also contains a sensor, which is interlocked with activation of the scope and reacts on the shots produced from the firearm in general and separately on those shots produced during active work of the night-vision optics at nighttime. The aforementioned shots of both types are counted and stored in separate memory units. The night-time shots affects the life expectancy of the night-vision optics because of muzzle flashes which cause such devices as an image intensifier to work with an increased light load. The information obtained from the time measuring device and the shot counter makes it possible to timely receive a warning signal about the fact that the night optics or the entire firearm must be replaced.

Abstract: A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition IBE<ICB according to a voltage applied across a base and emitter where IBE is the base current flowing through a base-emitter path in a forward direction, and ICB is the base current flowing through a collector-base path in a reverse direction.