Including Protection Means Patents (Class 330/298)
  • Patent number: 10256775
    Abstract: A semiconductor device formed on a silicon on insulator substrate includes an input node to receive a first signal, such as a high frequency signal, and an output node to output a second signal corresponding to the first signal. A first transistor has a gate that receives the first signal from the input node and thereby outputs an amplified first signal. A second transistor is connected between a drain of the first transistor and the output node. An inductor is connected between a source of the first transistor and a ground potential. A capacitor connected is between the gate of the first transistor and the input node. An electrostatic discharge (ESD) protective element is connected between a first node and a second node. The first node is between the inductor and the first transistor, and the second node is between the input node and the capacitor.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: April 9, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshiki Seshita, Yasuhiko Kuriyama
  • Patent number: 10211732
    Abstract: An SMPS (Switched Mode Power Supply) circuit includes a first switch element, a second switch element, an inductor, a capacitor, a current sensor, a current comparator, and a controller. The first switch element is coupled between a first power node and a switch node. The second switch element is coupled between the switch node and a second power node. The inductor is coupled between the switch node and an output node. The capacitor is coupled between the output node and the second power node. The current sensor detects a switch current through the second switch element. The current comparator compares the switch current with a first reference current to generate a comparison signal. The controller controls the first switch element and the second switch element according to the comparison signal and a switch voltage at the switch node. The invention can avoid an excessive SMPS output current.
    Type: Grant
    Filed: August 18, 2016
    Date of Patent: February 19, 2019
    Assignee: MediaTek Inc.
    Inventors: Chih-Chen Li, Kuan-Yu Chu, Shan-Fong Hong
  • Patent number: 10090807
    Abstract: This disclosure provides isolation for a medical amplifier by providing a low impedance path for noise across an isolation barrier. The low impedance path can include a capacitive coupling between a patient ground, which is isolated from control circuitry, and a functional ground of an isolation system that is isolated from earth ground. The low impedance path can draw noise current from an input of an amplifier of patient circuitry.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: October 2, 2018
    Assignee: Cardioinsight Technologies, Inc.
    Inventors: Arkadiusz Biel, Harold Wodlinger, Richard M. Fine
  • Patent number: 9979353
    Abstract: Aspects of the present disclosure are generally directed to a power supply for generating an output supply voltage. The power supply generally includes a variable voltage supply configured to generate an intermediate supply voltage based on a reference signal, a correction circuit configured to generate an error signal based on the output supply voltage or the intermediate supply voltage, and a combiner configured to combine the intermediate supply voltage and the error signal to provide the output supply voltage.
    Type: Grant
    Filed: March 23, 2017
    Date of Patent: May 22, 2018
    Assignee: SnapTrack, Inc.
    Inventors: Martin Paul Wilson, Shane Flint
  • Patent number: 9930452
    Abstract: A system includes a class D amplifier and a current steering digital-to-analog converter (DAC) directly connected to the class D amplifier. The system also includes a common mode servo circuit coupled to a node interconnecting the current steering DAC to the class D amplifier. The common servo circuit amplifies a difference between a common mode signal determined from the node and a reference voltage and generates a feedback current to the node based on the amplified difference. A feed-forward common-mode compensation circuit is included to reduce an alternating current (AC) ripple from the class D amplifier. The feed-forward common-mode compensation circuit includes first and second resistors coupled to respective outputs of the class D amplifier. A current mirror is coupled to the first and second resistors and is configured to sink a current from the node to ground that approximates a common mode feedback current of the class D amplifier.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: March 27, 2018
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Lars Risbo, Ryan Erik Lind, Jasjot Singh Chadha
  • Patent number: 9722546
    Abstract: A bias circuit for applying bias current to a low quiescent current amplifier includes first and second transistors and a transistor pair circuit. The first transistor is connected to a supply bias voltage source and an auxiliary bias voltage source, and is controlled by a bias voltage output from the auxiliary bias voltage source, the first transistor acting as a current source. The second transistor is connected to the supply bias voltage source and an output of the first transistor, and is controlled by the output of the first transistor to selectively buffer supply bias current from the supply bias voltage source provided to the low quiescent current amplifier via a bias resistor. The transistor pair circuit includes third and fourth transistors connected in series, one of the third and fourth transistors is also connected in parallel with a dividing resistor, the transistor pair circuit acting as a voltage source.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: August 1, 2017
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Jagadheswaran Rajendran, Yut Hoong Chow
  • Patent number: 9680426
    Abstract: A power amplifier is described. A power amplifier includes at least a first amplifier stage. The power amplifier also includes a first notch filter coupled with the first amplifier stage. The first notch filter is configured to tune to a first frequency. The first notch filter including at least one first set of metal oxide semiconductor variable capacitor arrays. Moreover, the power amplifier includes a first mirrored notch filter coupled with said first amplifier stage. The first mirror notch filter is configured to tune to the mirror of the first frequency. The first mirror notch filter including at least one second set of metal oxide semiconductor variable capacitor arrays.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: June 13, 2017
    Assignee: TDK Corporation
    Inventor: Chris Levesque
  • Patent number: 9648572
    Abstract: An apparatus for regulation of the signal power of a transmitter includes a control loop. The control loop includes a controlled module, a voltage detector, an evaluation circuit and an input amplification module. A decoupling module decouples the output of the control loop from a downstream electrical load.
    Type: Grant
    Filed: November 8, 2006
    Date of Patent: May 9, 2017
    Assignee: Intel Deutschland GmbH
    Inventor: André Hanke
  • Patent number: 9589916
    Abstract: A packaged RF power transistor includes an RF input lead, a DC gate bias lead, an RF power transistor comprising gate, source and drain terminals, and an input match network. The input match network includes a primary inductor electrically connected to the RF input lead, a secondary inductor electrically connected to the gate terminal and to the DC gate bias lead, and a tuning capacitor electrically connected to the RF input lead and physically disconnected from the gate terminal. The input match network is configured to block DC voltages between the RF input lead and the gate terminal and to propagate AC voltages in a defined frequency range from the RF input lead to the gate terminal. The tuning capacitor is configured to adjust a capacitance of the input match network based upon a variation in DC voltage applied to the RF input lead.
    Type: Grant
    Filed: February 10, 2015
    Date of Patent: March 7, 2017
    Assignee: Infineon Technologies AG
    Inventors: Marvin Marbell, E J Hashimoto, Bill Agar
  • Patent number: 9559640
    Abstract: A CMOS amplifier including electrostatic discharge (ESD) protection circuits is disclosed. In one embodiment, the CMOS amplifier may include a PMOS transistor, a NMOS transistor, primary protection diodes, and one or more auxiliary protection diodes to limit a voltage difference between terminals of the CMOS amplifier. In some embodiments, the auxiliary protection diodes may limit the voltage difference between an input terminal of the CMOS amplifier and a supply voltage, the input terminal of the CMOS amplifier and ground, and the input terminal and the output terminal of the CMOS amplifier.
    Type: Grant
    Filed: February 26, 2015
    Date of Patent: January 31, 2017
    Assignee: QUALCOMM Incorporated
    Inventors: Ahmed Abdel Monem Youssef, Prasad Srinivasa Siva Gudem, Eugene Robert Worley, Dongling Pan, Li-Chung Chang
  • Patent number: 9406668
    Abstract: A power semiconductor element includes: a main transistor including a first gate electrode, a first drain electrode, and a first source electrode; a sensor transistor including a second gate electrode, a second drain electrode, and a second source electrode; and a gate switch transistor including a third gate electrode, and a third drain electrode, a third source electrode. The first gate electrode, the second gate electrode, and the third drain electrode are connected, the first drain electrode and the second drain electrode are connected, the first source electrode and the second source electrode are connected via a sensor resistor, the first source electrode and the third source electrode are connected, the second source electrode and the third gate electrode are connected via a switch resistor, and the main transistor, the sensor transistor, and the gate switch transistor are formed with a nitride semiconductor.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: August 2, 2016
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Shuichi Nagai, Daisuke Ueda, Tatsuo Morita, Tetsuzo Ueda
  • Patent number: 9294038
    Abstract: Communications equipment including communications equipment for wireless communications may benefit from power amplifier transistors having stabilized characteristics. For example, certain power amplifier transistors may benefit from having their characteristics stabilized during bias switching. An apparatus can include a power amplifier device. The apparatus can also include a voltage or current input to the power amplifier device. An input voltage or current to the voltage or current input can be configured to be controlled according to scheduled transmission in a slot. The apparatus can also include a gate bias insertion circuit provided at the bias input. The gate bias insertion circuit can be configured to provide a reduced input voltage or current as a power amplifier bias. The reduced input voltage or current can be configured to correspond to a threshold of a transistor of the power amplifier when transmission is not scheduled in a slot.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: March 22, 2016
    Assignee: NOKIA SOLUTIONS AND NETWORKS OY
    Inventor: Darrell Barabash
  • Patent number: 9240760
    Abstract: A power amplifier module includes a first amplification transistor that amplifies and outputs a radio frequency signal, a second amplification transistor that is connected in parallel to the first amplification transistor and that has a smaller size than the first amplification transistor, a bias circuit that supplies a bias voltage or a bias current to the first and second amplification transistors, a current detector circuit that detects a current flowing in the second amplification transistor, and a bias control circuit that controls the bias voltage or the bias current supplied from the bias circuit to the first and second amplification transistors depending on the detection result of the current detector circuit.
    Type: Grant
    Filed: November 13, 2014
    Date of Patent: January 19, 2016
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Kazuhiko Ishimoto, Takashi Soga
  • Patent number: 9106072
    Abstract: Exemplary embodiments are directed to providing electrostatic discharge (ESD) protection of a cascode device of an amplifier. In an exemplary embodiment, a transistor is configured to receive a bias voltage and at least one circuit element coupled to the transistor and configured to receive an input voltage via an input pad. Additionally at least one diode can be coupled to a drain of the first transistor and configured to limit a voltage potential at an internal node of the amplifier caused by the input pad.
    Type: Grant
    Filed: December 19, 2012
    Date of Patent: August 11, 2015
    Assignee: QUALCOMM Incorporated
    Inventors: Himanshu Khatri, Ojas M Choksi, Wei Zhuo
  • Patent number: 9070665
    Abstract: A high-voltage switch comprises one or more high-voltage transistors and a cooling substrate which may be manufactured from an electrically insulating material and on and/or through which a cooling medium can flow, wherein the one or more high-voltage transistors are mounted on at least one surface of the cooling substrate.
    Type: Grant
    Filed: May 3, 2013
    Date of Patent: June 30, 2015
    Assignee: Bergmann Messgeraete Entwicklung KG
    Inventor: Thorald Horst Bergmann
  • Patent number: 9041469
    Abstract: One or more embodiments of the present invention pertain to an all solid-state microwave power module. The module includes a plurality of solid-state amplifiers configured to amplify a signal using a low power stage, a medium power stage, and a high power stage. The module also includes a power conditioner configured to activate a voltage sequencer (e.g., bias controller) when power is received from a power source. The voltage sequencer is configured to sequentially apply voltage to a gate of each amplifier and sequentially apply voltage to a drain of each amplifier.
    Type: Grant
    Filed: March 20, 2013
    Date of Patent: May 26, 2015
    Assignee: The United States of America as Represented by the Administrator of National Aeronautics and Space Administration
    Inventors: Rainee N. Simons, Edwin G. Wintucky
  • Patent number: 9035701
    Abstract: This disclosure relates generally to radio frequency (RF) amplification devices and methods of limiting an RF signal current. Embodiments of the RF amplification device include an RF amplification circuit and a feedback circuit. The RF amplification circuit is configured to amplify an RF input signal so as to generate an amplified RF signal that provides an RF signal current with a current magnitude. The feedback circuit is used to limit the RF signal current. In particular, a thermal sense element in the feedback circuit is configured to generate a sense current, and thermal conduction from the RF amplification circuit sets a sense current level of the sense current as being indicative of the current magnitude of the RF signal current. To limit the RF signal current, the feedback circuit decreases the current magnitude of the RF signal current in response to the sense current level reaching a trigger current level.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: May 19, 2015
    Assignee: RF Micro Devices, Inc.
    Inventors: Derek Schooley, Robert Bennett, James Leake, Pradeep Silva
  • Patent number: 8994455
    Abstract: There is provided a radio frequency amplifying apparatus having a protection voltage varying function, including a radio frequency amplifying unit amplifying a radio frequency signal, and a protection circuit unit connected between an output node of the radio frequency amplifying unit and a ground and limiting a voltage in the output node to a level of a preset protection voltage or less when the voltage in the output node is higher than the preset protection voltage, wherein the protection voltage is varied with a control signal.
    Type: Grant
    Filed: May 10, 2013
    Date of Patent: March 31, 2015
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Youn Suk Kim
  • Patent number: 8994454
    Abstract: According to embodiments of the present invention, an over-input signal may be limited to be within a range between adjustable upper limit voltage and lower limit voltage while suppressing deterioration of a noise figure. An amplifier circuit includes an input transistor; an input transistor; a resistor element having a first terminal connected to a gate of the input transistor and a second terminal connected to a bias voltage; and a protective circuit connected to the gate of the input transistor and limiting an input to the gate of the input transistor to be within a range between an upper limit voltage and lower limit voltage adjustable based on the bias voltage.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: March 31, 2015
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Tadamasa Murakami
  • Publication number: 20150084702
    Abstract: Embodiments of the present disclosure describe electrostatic discharge (ESD) circuitry and associated techniques and configurations. In one embodiment, ESD circuitry includes a first node coupled with a supply voltage node and a ground node, a first transistor coupled with the first node and the supply voltage node, a second transistor coupled with the first node and the ground node, a second node coupled with the first transistor and the second transistor, a third transistor coupled with the second node and a third node coupled with the third transistor, wherein a first time period to charge the first node is less than a second time period to discharge the third node. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: September 26, 2013
    Publication date: March 26, 2015
    Applicant: TriQuint Semiconductor, Inc.
    Inventor: Bruce J. Tesch
  • Publication number: 20150038092
    Abstract: Various implementations include circuits, devices and/or methods that provide open loop current limiting power amplifiers and the like. In some implementations, an open loop current clamp includes a trim module to provide a control value and a limiting source having respective input and output terminals. The input terminal is coupled to the trim module to receive the control value. The output terminal coupled to a control terminal of the first transistor to provide a limiting electrical level produced in response to the control value by the limiting source. The limiting electrical level substantially setting a first mode of operation for the first transistor such that the current draw of the first transistor is substantially determined by the first mode of operation and the limiting electrical level such that a voltage at an output terminal of the first transistor exerts reduced influence on the current draw.
    Type: Application
    Filed: July 7, 2014
    Publication date: February 5, 2015
    Inventors: Paul R. Andrys, David S. Ripley, Matt L. Banowetz, Kyle J. Miller
  • Publication number: 20140368280
    Abstract: A protection module (4) for a RF-amplifier (2) is efficient against overvoltage due to load impedance mismatch when said RF-amplifier is connected to a load RF-element (3). The protection module comprises a branch with at least one diode-like operating component (D1, D2, . . . , Dn) and a resistor (R2) which starts conducting when a RF-signal on a transmission link (6) between the RF-amplifier and the load RF-element is higher than a threshold set by the diode-like operating component. Such protection may be implemented in MOS technology only.
    Type: Application
    Filed: February 19, 2013
    Publication date: December 18, 2014
    Inventor: Vincent Knopik
  • Patent number: 8908886
    Abstract: The power amplifying apparatus includes a first comparator that compares the first detection signal and the fourth detection signal and outputs a first comparison signal depending on whether or not a difference between the first current and the fourth current is equal to or greater than a first predetermined value. The power amplifying apparatus includes a second comparator that compares the second detection signal and the third detection signal and outputs a second comparison signal depending on whether or not a difference between the second current and the third current is equal to or greater than a second predetermined value.
    Type: Grant
    Filed: June 5, 2012
    Date of Patent: December 9, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Yamauchi, Hiroyuki Tsurumi
  • Publication number: 20140292415
    Abstract: Semiconductor devices are disclosed including a bulk substrate, an epitaxial collector layer, an epitaxial base layer, an epitaxial emitter layer and an electrical insulator layer in direct thermal contact with at least a portion of the base layer, emitter layer, and/or collector layer. At least a portion of the electrical insulator layer has high thermal conductivity properties, which can provide for dissipation of undesirable thermal energy through the electrical insulator layer.
    Type: Application
    Filed: March 24, 2014
    Publication date: October 2, 2014
    Inventor: Stephen Joseph KOVACIC
  • Patent number: 8848331
    Abstract: A protection device includes: a serial element unit that includes a first switching element and a resistive element, one end being connected to a control terminal of a protection-target switching element, the other end being connected to a first voltage line, the protection-target switching element including a first terminal connected to the first voltage line, a second terminal connected to a second voltage line and an inductor unit, and the control terminal, the protection-target switching element switching a conduction state at the normal time to a non-conduction state between the first terminal and the second terminal when an off-voltage is applied to the control terminal; a capacitance provided at the protection-target switching element and has a predetermined capacitance value; and a controller that performs control such that the first switching element is in a conduction state if the protection-target switching element is put into a non-conduction state.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: September 30, 2014
    Assignee: Lapis Semiconductor Co., Ltd.
    Inventors: Yosuke Iwasa, Atsuhiro Kai, Osamu Kuroki
  • Patent number: 8847688
    Abstract: A method for processing signals may include comparing an output voltage signal in an output stage of an amplifier with a reference voltage signal. If the output voltage signal is greater than the reference voltage signal, a comparator voltage signal may be generated. Bias voltage for at least one output stage transistor may be increased by increasing current generated by a first bias current source of the at least one output stage transistor. The current may be increased in proportion to the generated comparator voltage signal. The output voltage signal may be divided prior to the comparing. The at least one output stage transistor may be dynamically biased based on the generated comparator voltage signal. The comparator voltage signal may be generated using at least one differential pair with a current mirror load.
    Type: Grant
    Filed: August 3, 2012
    Date of Patent: September 30, 2014
    Assignee: Google Inc.
    Inventor: Benjamin Joseph Mossawir
  • Patent number: 8841971
    Abstract: Systems and method that provide short circuit protection for a power amplifier are described. The system can include, for example, a sense network that receives an output current from the power amplifier that is to be protected. The sense network can include, for example, a first resistor and a second resistor in series. The sense amplifier has a first input and a second input in which the first input is coupled to a first end of the first resistor and in which second input is coupled to a second end of the first resistor. The sense amplifier amplifies a voltage across the first resistor of the sense network in which the voltage is based on the output current from the power amplifier. Based on the amplified voltage of the sense amplifier, the feedback network reduces the output current from the power amplifier to protect the power amplifier from damage due to a short circuit condition.
    Type: Grant
    Filed: December 17, 2012
    Date of Patent: September 23, 2014
    Assignee: Google Inc.
    Inventors: Arnd Geis, Benjamin Joseph Mossawir
  • Patent number: 8823457
    Abstract: Systems and methods for protecting circuits from short-circuit events are described. The system may include, for example, first circuitry that receives an output signal from a power amplifier to be protected from a short-circuit event. The first circuitry mirrors an output stage of the power amplifier and provides a mirrored current that mirrors an output stage current of the power amplifier. Second circuitry is operatively coupled to the first circuitry and to the power amplifier. The second circuitry includes, for example, a comparator circuit that compares the mirrored current to a reference current. A first transistor of the comparator circuit is in a mirror configuration with respect to a second transistor of the power amplifier. The second transistor sinks or sources current into the power amplifier to protect the power amplifier from the short-circuit event.
    Type: Grant
    Filed: December 17, 2012
    Date of Patent: September 2, 2014
    Assignee: Google Inc.
    Inventors: Benjamin Joseph Mossawir, Arnd Geis
  • Publication number: 20140232472
    Abstract: A mismatch protection circuit for high frequency power amplifiers includes a waveguide coupler connected to the output of the high frequency power amplifier. The waveguide coupler includes a first detector diode, which supplies, according to the power level being applied, a first voltage, which corresponds to the effective power that is fed in. The waveguide coupler also includes a second detector diode, the outputted second voltage of which corresponds to the power that is reflected due to the mismatch. The protection circuit further includes a control circuit, with which the amount of a mismatch is determined from the difference between the voltage value at the second diode and a reference voltage. The output stage(s) of the high frequency power amplifier(s) is and/or are switched on or off, depending on whether the voltage difference drops below or exceeds a given reference value.
    Type: Application
    Filed: June 18, 2012
    Publication date: August 21, 2014
    Applicant: Tesat-Spacecom GmbH & Co. KG
    Inventors: Abdel-Messiah Khilla, Juergen Schaeufler
  • Publication number: 20140232471
    Abstract: There is provided a radio frequency amplifying apparatus having a protection voltage varying function, including a radio frequency amplifying unit amplifying a radio frequency signal, and a protection circuit unit connected between an output node of the radio frequency amplifying unit and a ground and limiting a voltage in the output node to a level of a preset protection voltage or less when the voltage in the output node is higher than the preset protection voltage, wherein the protection voltage is varied with a control signal.
    Type: Application
    Filed: May 10, 2013
    Publication date: August 21, 2014
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventor: Youn Suk KIM
  • Patent number: 8773831
    Abstract: A semiconductor integrated circuit that is efficiently reduced in a noise level is offered. P-channel type MOS transistors M1 and M2 serving as differential input transistors have a thin gate oxide film in order to reduce the noise level. A protection circuit to protect the P-channel type MOS transistors M1 and M2 from overvoltage is formed including P-channel type MOS transistors M3 and M4. The P-channel type MOS transistor M3 is a first protection transistor to protect the P-channel type MOS transistor M1 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M1. The P-channel type MOS transistor M4 is a second protection transistor to protect the P-channel type MOS transistor M2 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M2.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: July 8, 2014
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Akinobu Onishi, Yasuhiro Hinokuma, Kazuyuki Kobayashi, Kengo Murase
  • Patent number: 8766724
    Abstract: The apparatus and method thereof accurately sense and convert a radio frequency (RF) current signal to direct current (DC) independent of process variation and temperature, and without requiring high speed, high voltage amplifiers for its operation. The apparatus comprises an AC coupled circuit that couples the RF signal from the main device to a sense device with an N:M ratio, a low pass filter system that extracts the DC content of the RF current signal, and a negative feedback loop that forces the DC content of the main device and the sensed device to be equal. Exemplary embodiments include a current sensor that provides feedback to protect an RF power amplifier from over-current condition, and a RF power detection and control in a RF power amplifier (PA) that multiplies the sensed output current by the sensed output voltage to be used as a feedback to control the PA's bias.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: July 1, 2014
    Assignee: RF Micro Devices (Cayman Islands), Ltd.
    Inventors: Daniel Ho, Malcolm Smith
  • Publication number: 20140167862
    Abstract: Exemplary embodiments are directed to providing electrostatic discharge (ESD) protection of a cascode device of an amplifier. In an exemplary embodiment, a transistor is configured to receive a bias voltage and at least one circuit element coupled to the transistor and configured to receive an input voltage via an input pad. Additionally at least one diode can be coupled to a drain of the first transistor and configured to limit a voltage potential at an internal node of the amplifier caused by the input pad.
    Type: Application
    Filed: December 19, 2012
    Publication date: June 19, 2014
    Applicant: QUALCOMM INCORPORATED
    Inventors: Himanshu Khatri, Ojas M. Choksi, Wei Zhuo
  • Patent number: 8736368
    Abstract: Systems, methods and apparatus are disclosed for amplifiers for wireless power transfer. In one aspect a method is provided for controlling operation of an amplifier, such as a class E amplifier. The method may include monitoring an output of the amplifier. The method may further include adjusting a timing of an enabling switch of the amplifier based on the output of the amplifier.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: May 27, 2014
    Assignee: QUALCOMM Incorporated
    Inventors: Linda S Irish, Stanley Slavko Toncich, William H Von Novak, III
  • Publication number: 20140132355
    Abstract: A power amplifier includes a power amplifier core including a plurality of gain stages to receive a radio frequency (RF) signal and to output an amplified RF signal, an output network coupled to the power amplifier core to receive the amplified RF signal and output a transmit output power signal, and a directional coupler coupled to the output network to obtain a coupled signal proportional to the transmit output power signal. Each of these components can be configured on a single semiconductor die, in an embodiment.
    Type: Application
    Filed: November 12, 2012
    Publication date: May 15, 2014
    Applicant: Avago Technologies General IP (Singapore) Pte. Ltd
    Inventor: Timothy Dupuis
  • Patent number: 8680926
    Abstract: The present invention relates to an integrated amplification circuit for a transducer signal comprising a semiconductor substrate. The semiconductor substrate comprises a signal limiting network comprising first and second parallel legs coupled between an input of a preamplifier and a first predetermined electric potential of the integrated amplification circuit. The first leg comprises a plurality of cascaded semiconductor diodes coupled to conduct current in a first direction through the limiting network and the second leg comprises a plurality of cascaded semiconductor diodes coupled to conduct current in a second direction through the limiting network. A current blocking member is configured to break a parasitic current path between an anode or a cathode of a semiconductor diode of the first leg or the second leg and the semiconductor substrate.
    Type: Grant
    Filed: May 1, 2012
    Date of Patent: March 25, 2014
    Assignee: Invensense, Inc.
    Inventors: Igor Mucha, Pavol Tiković, Marek Matej
  • Patent number: 8674769
    Abstract: Embodiments of the present application disclose a power amplifier protection circuit, communication device, and method, to protect a power amplifier when an abnormal signal, such as a burr or a pulse, occurs in a circuit. The method according to an embodiment of the present application comprises: detecting and comparing, by an input detection circuit, an abnormal signal in an input signal, outputting a protection control signal, and after processing performed by a delay circuit, controlling a power amplifier to be in an off state in a pulse width of the delayed protection control signal, so that the abnormal signal passes through the power amplifier when the power amplifier is in the off state, thereby preventing the power amplifier from burning, and achieving the effect of protecting the power amplifier.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: March 18, 2014
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Lunchen Xie, Xiang Wei, Hua Wang
  • Patent number: 8648656
    Abstract: The low-noise amplifier with through mode is configured such that a source grounded transistor and a gate grounded transistor are connected in cascode, and a load impedance element and a switching transistor are serially connected between the drain of the gate grounded transistor and a power supply, and a through pass circuit is connected between an input terminal and an output terminal. The gate voltage of the gate grounded transistor is regulated by a bias circuit and the voltage of a mode control terminal is converted by a level shifter to control the gate voltage of the switching transistor, whereby, in the case of using only transistors whose terminal-to-terminal breakdown voltages are each equal to or less than the power supply voltage, it becomes feasible to prevent voltages equal to or more than the terminal-to-terminal breakdown voltages from being applied between the terminals of each transistor.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: February 11, 2014
    Assignee: Panasonic Corporation
    Inventors: Yusuke Nozaki, Hiroyuki Kohama, Masaru Fukusen, Naoki Okamoto
  • Patent number: 8644777
    Abstract: A system for power amplifier over-voltage protection includes a power amplifier configured to receive a system voltage, a bias circuit configured to provide a bias signal to the power amplifier, and a power amplifier over-voltage circuit configured to interrupt the bias signal when the system voltage exceeds a predetermined value, while the system voltage remains coupled to the power amplifier.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: February 4, 2014
    Assignee: Skyworks Solutions, Inc.
    Inventors: David S. Ripley, Joel A. Penticoff
  • Patent number: 8624674
    Abstract: An output stage of an integrated class-A amplifier in a technology adapted to a first voltage and intended to be powered by a second voltage greater than the first one, including: one or several transistors of a first channel type between a first terminal of application of the second voltage and an output terminal of the stage; transistors of a second channel type between this output terminal and a second terminal of application of the second voltage, wherein: a first transistor of the second channel type has its gate directly connected to an input terminal of the stage; at least a second and a third transistors of the second channel type are in series between the output terminal and said first transistor, the gate of the second transistor being connected to the midpoint of a resistive dividing bridge between said output terminal and the gate of the third transistor, and the gate of the third transistor being biased to a fixed voltage.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: January 7, 2014
    Assignee: STMicroelectronics (Grenoble 2) SAS
    Inventors: Christophe Forel, Roland Mazet
  • Patent number: 8610505
    Abstract: A thermally regulated amplifier system includes an amplifier unit, a temperature-sensing unit and a controller. The amplifier unit includes a power amplifier that has an adjustable gain function. The controller receives temperature readings from the temperature-sensing unit, computes the gain G(n) of the amplifier unit, and provides the computed gain of the amplifier G(n) to the power amplifier unit.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: December 17, 2013
    Assignee: Harman Becker Automotive Systems GmbH
    Inventors: Gerhard Pfaffinger, Andreas Suess
  • Patent number: 8565699
    Abstract: A transmitter includes a Power Amplifier (PA), an antenna, at least one passive component and control circuitry. The PA is controlled by a PA control voltage, is operative to amplify a Radio Frequency (RF) signal and has input and output amplifier terminals. The passive component has an input component terminal coupled to the output amplifier terminal of the PA and an output component terminal coupled to the antenna. The control circuitry is configured to determine an interim power level at the output amplifier terminal that causes the signal at the output component terminal to have a target output power level, to determine, based on the interim power level, a given PA control voltage that makes the interim power level producible by the PA, so that the signal at the output component terminal has the target output power level, and to apply the given PA control voltage to the PA.
    Type: Grant
    Filed: May 2, 2010
    Date of Patent: October 22, 2013
    Assignee: Marvell International Ltd.
    Inventors: David Lipshitz, Alexander Zaslavsky
  • Publication number: 20130257543
    Abstract: Embodiments of the present application disclose a power amplifier protection circuit, communication device, and method, to protect a power amplifier when an abnormal signal, such as a bun or a pulse, occurs in a circuit. The method according to an embodiment of the present application comprises: detecting and comparing, by an input detection circuit, an abnormal signal in an input signal, outputting a protection control signal, and after processing performed by a delay circuit, controlling a power amplifier to be in an off state in a pulse width of the delayed protection control signal, so that the abnormal signal passes through the power amplifier when the power amplifier is in the off state, thereby preventing the power amplifier from burning, and achieving the effect of protecting the power amplifier.
    Type: Application
    Filed: May 29, 2013
    Publication date: October 3, 2013
    Inventors: Lunchen XIE, Xiang WEI, Hua WANG
  • Patent number: 8508300
    Abstract: The present invention relates to audio amplifier and a method for protecting the audio amplifier. The audio amplifier includes a pre-amp circuit, an output stage power amplifier, a temperature detector and a gain adjusting circuit. The pre-amp circuit receives an audio signal for amplifying the audio signal to generate an amplified audio signal. The output stage power amplifier receives the amplified audio signal to drive a load. The temperature detector is used for detecting a temperature of the output stage power amplifier to output a temperature signal. The gain adjusting circuit adjusts amplitude of the amplified audio signal of the pre-amp circuit according to the temperature signal.
    Type: Grant
    Filed: September 9, 2011
    Date of Patent: August 13, 2013
    Assignee: Generalplus Technology Inc.
    Inventors: Kung-Wang Lee, Tung-Tsai Liao
  • Patent number: 8487705
    Abstract: Embodiments of circuits, apparatuses, and systems for a protection circuit to protect against overdrive or overvoltage conditions. Other embodiments may be described and claimed.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: July 16, 2013
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Jingshi Yao, Peter Hu, Xiaopeng Sun, Barry Jia-Fu Lin, Mehra Mokalla
  • Patent number: 8476979
    Abstract: One or more embodiments of the present invention pertain to an all solid-state microwave power module. The module includes a plurality of solid-state amplifiers configured to amplify a signal using a low power stage, a medium power stage, and a high power stage. The module also includes a power conditioner configured to activate a voltage sequencer (e.g., bias controller) when power is received from a power source. The voltage sequencer is configured to sequentially apply voltage to a gate of each amplifier and sequentially apply voltage to a drain of each amplifier.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: July 2, 2013
    Assignee: The United States of America as Represented by the Administrator of National Aeronautics and Space Administration
    Inventors: Rainee N Simons, Edwin G Wintucky
  • Publication number: 20130154748
    Abstract: An apparatus (20) for use as an amplifier has a transistor (26) for providing signal amplification, a heat pipe or circulated fluid heat sink (22) and a thermal interface device (24) for providing mechanical and thermal connection between the transistor (26) and the heat sink (22). In use, to facilitate efficient transfer of heat/thermal energy from the transistor (26) to the heat sink (22), the plate (24) is provided between the heat sink (22) and the transistor (26). The plate (24) connects the heat sink (22) to the transistor (26) and provides a thermal conduit therebetween.
    Type: Application
    Filed: July 15, 2011
    Publication date: June 20, 2013
    Applicant: EMBLATION LIMITED
    Inventors: Gary Beale, Eamon McErlean
  • Patent number: 8465432
    Abstract: In an example embodiment, a method for bidirectional signal propagation comprises: a) sensing a voltage level of a first signal at a first port; b) coupling the first port to an output of an amplifier with a solid state switch if the voltage level of the first signal is less than a threshold voltage, whereby a second signal applied to a second port coupled to an input of the amplifier is propagated in a first direction from the second port to the first port; and c) bypassing the amplifier if the voltage level of the first signal is greater than the threshold voltage such that the first signal is propagated in a second direction from the first port to the second port.
    Type: Grant
    Filed: September 5, 2010
    Date of Patent: June 18, 2013
    Assignee: Maxim Integrated Products, Inc.
    Inventors: Luigi Franchini, Diego Maiocchi, Roberto Amadio
  • Patent number: 8461932
    Abstract: A signal amplifier includes an inverting amplification circuit, a first switching element, a second switching element, and a control section. The inverting amplification circuit includes a first voltage terminal, a second voltage terminal, an inverting input terminal, an output terminal, a first protected switching element, and a second protected switching element. The control section controls such that when an overcurrent has flowed in the first voltage line, the first and second protected switching elements are switched to a non-conducting state after switching the first switching element in a conducting state and switching the second switching element in a non-conducting state, and when an overcurrent has flowed in the second voltage line, the first the second protected switching elements are switched to a non-conducting state after switching the first switching element in a non-conducting state and switching the second switching element in a conducting state.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: June 11, 2013
    Assignee: Oki Semiconductor Co., Ltd.
    Inventors: Atsuhiro Kai, Osamu Kukori
  • Patent number: RE44525
    Abstract: Systems and methods for over-current protection in all-digital amplifiers using low-cost current sensing mechanisms. An over-current hard clipping unit receives a digital audio signal, clips the signal according to a clip level, and provides the signal to a modulator. The modulator modulates the signal to produce, e.g., a PWM signal and provides the modulated signal to an output stage which generates an output current to drive a speaker. An over-current sensing unit is compares the output current to a threshold value and generates a binary signal indicating whether the output current exceeds the threshold value. The hard clipping unit receives the binary signal and ramps down the clip level during time periods in which the binary signal indicates that the output current exceeds the threshold. When the binary signal indicates that the output current does not exceed the threshold value, the hard clipping unit ramps up the clip level.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: October 8, 2013
    Assignee: D2Audio Corporation
    Inventors: Daniel L. W. Chieng, Michael A. Kost, Jack B. Andersen, Larry E. Hand, Wilson E. Taylor